JP2002141494A5 - - Google Patents

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Publication number
JP2002141494A5
JP2002141494A5 JP2000334686A JP2000334686A JP2002141494A5 JP 2002141494 A5 JP2002141494 A5 JP 2002141494A5 JP 2000334686 A JP2000334686 A JP 2000334686A JP 2000334686 A JP2000334686 A JP 2000334686A JP 2002141494 A5 JP2002141494 A5 JP 2002141494A5
Authority
JP
Japan
Prior art keywords
ion
metal atom
point contact
contact array
mobile ions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000334686A
Other languages
English (en)
Japanese (ja)
Other versions
JP4118500B2 (ja
JP2002141494A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2000334686A external-priority patent/JP4118500B2/ja
Priority to JP2000334686A priority Critical patent/JP4118500B2/ja
Priority to US10/363,259 priority patent/US7026911B2/en
Priority to TW090126677A priority patent/TW523983B/zh
Priority to PCT/JP2001/009464 priority patent/WO2002037572A1/ja
Priority to DE60131036T priority patent/DE60131036T2/de
Priority to EP01980925A priority patent/EP1331671B1/en
Priority to KR1020037004682A priority patent/KR100751736B1/ko
Priority to DE60126310T priority patent/DE60126310T2/de
Priority to EP06001940A priority patent/EP1662575B1/en
Publication of JP2002141494A publication Critical patent/JP2002141494A/ja
Priority to US10/918,360 priority patent/US7473982B2/en
Publication of JP2002141494A5 publication Critical patent/JP2002141494A5/ja
Priority to US11/165,037 priority patent/US7525410B2/en
Publication of JP4118500B2 publication Critical patent/JP4118500B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2000334686A 2000-11-01 2000-11-01 ポイントコンタクト・アレー Expired - Fee Related JP4118500B2 (ja)

Priority Applications (11)

Application Number Priority Date Filing Date Title
JP2000334686A JP4118500B2 (ja) 2000-11-01 2000-11-01 ポイントコンタクト・アレー
KR1020037004682A KR100751736B1 (ko) 2000-11-01 2001-10-29 포인트 컨택트 어레이, ｎｏｔ 회로, 및 이를 이용한 전자회로
EP06001940A EP1662575B1 (en) 2000-11-01 2001-10-29 A NOT circuit
PCT/JP2001/009464 WO2002037572A1 (en) 2000-11-01 2001-10-29 Point contact array, not circuit, and electronic circuit comprising the same
DE60131036T DE60131036T2 (de) 2000-11-01 2001-10-29 Ein NOT-Schaltkreis
EP01980925A EP1331671B1 (en) 2000-11-01 2001-10-29 Point contact array and electronic circuit comprising the same
US10/363,259 US7026911B2 (en) 2000-11-01 2001-10-29 Point contact array, not circuit, and electronic circuit comprising the same
DE60126310T DE60126310T2 (de) 2000-11-01 2001-10-29 Punktkontaktarray, Not-Schaltung und elektronische Schaltung damit
TW090126677A TW523983B (en) 2000-11-01 2001-10-29 Point contact array, NOT circuit and electronic circuit using the same
US10/918,360 US7473982B2 (en) 2000-11-01 2004-08-16 Point contact array, not circuit, and electronic circuit comprising the same
US11/165,037 US7525410B2 (en) 2000-11-01 2005-06-24 Point contact array, not circuit, and electronic circuit using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000334686A JP4118500B2 (ja) 2000-11-01 2000-11-01 ポイントコンタクト・アレー

Publications (3)

Publication Number Publication Date
JP2002141494A JP2002141494A (ja) 2002-05-17
JP2002141494A5 true JP2002141494A5 (enExample) 2005-04-07
JP4118500B2 JP4118500B2 (ja) 2008-07-16

Family

ID=18810557

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000334686A Expired - Fee Related JP4118500B2 (ja) 2000-11-01 2000-11-01 ポイントコンタクト・アレー

Country Status (1)

Country Link
JP (1) JP4118500B2 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7875883B2 (en) 2001-09-25 2011-01-25 Japan Science And Technology Agency Electric device using solid electrolyte
US6849868B2 (en) * 2002-03-14 2005-02-01 Micron Technology, Inc. Methods and apparatus for resistance variable material cells
US6798068B2 (en) * 2002-11-26 2004-09-28 Advanced Micro Devices, Inc. MOCVD formation of Cu2S
WO2005008783A1 (ja) 2003-07-18 2005-01-27 Nec Corporation スイッチング素子、スイッチング素子の駆動方法、書き換え可能な論理集積回路およびメモリ素子
JP4992859B2 (ja) * 2003-08-27 2012-08-08 日本電気株式会社 半導体装置
JP4356542B2 (ja) 2003-08-27 2009-11-04 日本電気株式会社 半導体装置
JP5434967B2 (ja) * 2003-11-28 2014-03-05 ソニー株式会社 記憶素子及び記憶装置
JP4792714B2 (ja) 2003-11-28 2011-10-12 ソニー株式会社 記憶素子及び記憶装置
JP2005286084A (ja) * 2004-03-30 2005-10-13 Univ Waseda 量子化コンダクタンス素子、これを用いた磁場変化検出方法及び磁気検出方法、並びに量子化コンダクタンス素子の製造方法
US8320154B2 (en) 2007-08-08 2012-11-27 National Institute For Materials Science Switching element and application of the same
KR101418434B1 (ko) * 2008-03-13 2014-08-14 삼성전자주식회사 비휘발성 메모리 장치, 이의 제조 방법, 및 이를 포함하는프로세싱 시스템
JP5699666B2 (ja) * 2011-02-16 2015-04-15 日本電気株式会社 半導体装置
JP5696988B2 (ja) * 2011-06-08 2015-04-08 独立行政法人物質・材料研究機構 シナプス動作素子
JP2014075424A (ja) * 2012-10-03 2014-04-24 Toshiba Corp 不揮発性可変抵抗素子、制御装置および記憶装置

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