JP2002133614A - 薄膜磁気ヘッドおよびその製造方法 - Google Patents
薄膜磁気ヘッドおよびその製造方法Info
- Publication number
- JP2002133614A JP2002133614A JP2000331088A JP2000331088A JP2002133614A JP 2002133614 A JP2002133614 A JP 2002133614A JP 2000331088 A JP2000331088 A JP 2000331088A JP 2000331088 A JP2000331088 A JP 2000331088A JP 2002133614 A JP2002133614 A JP 2002133614A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- magnetic
- shield
- shield layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 207
- 239000010409 thin film Substances 0.000 title claims abstract description 99
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 239000010408 film Substances 0.000 claims abstract description 232
- 239000000463 material Substances 0.000 claims description 28
- 238000004544 sputter deposition Methods 0.000 claims description 27
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 20
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 12
- 238000007747 plating Methods 0.000 claims description 7
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 238000009413 insulation Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 471
- 230000005290 antiferromagnetic effect Effects 0.000 description 22
- 230000005294 ferromagnetic effect Effects 0.000 description 21
- 229920002120 photoresistant polymer Polymers 0.000 description 16
- 239000000696 magnetic material Substances 0.000 description 15
- 230000005415 magnetization Effects 0.000 description 14
- 230000005381 magnetic domain Effects 0.000 description 12
- 239000002885 antiferromagnetic material Substances 0.000 description 11
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 10
- 230000007547 defect Effects 0.000 description 10
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 9
- 238000010168 coupling process Methods 0.000 description 9
- 238000005859 coupling reaction Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 9
- 238000000059 patterning Methods 0.000 description 9
- 238000000992 sputter etching Methods 0.000 description 9
- 229910000914 Mn alloy Inorganic materials 0.000 description 8
- 230000008878 coupling Effects 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 239000011241 protective layer Substances 0.000 description 7
- 230000004907 flux Effects 0.000 description 6
- 229910052742 iron Inorganic materials 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 230000035699 permeability Effects 0.000 description 6
- 238000005498 polishing Methods 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 239000010949 copper Substances 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 239000010948 rhodium Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910003321 CoFe Inorganic materials 0.000 description 2
- 229910018979 CoPt Inorganic materials 0.000 description 2
- 229910019041 PtMn Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000010485 coping Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 239000003302 ferromagnetic material Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910001172 neodymium magnet Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 230000005330 Barkhausen effect Effects 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910015136 FeMn Inorganic materials 0.000 description 1
- 229910005435 FeTaN Inorganic materials 0.000 description 1
- 229910003289 NiMn Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- QJVKUMXDEUEQLH-UHFFFAOYSA-N [B].[Fe].[Nd] Chemical compound [B].[Fe].[Nd] QJVKUMXDEUEQLH-UHFFFAOYSA-N 0.000 description 1
- DTJAVSFDAWLDHQ-UHFFFAOYSA-N [Cr].[Co].[Pt] Chemical compound [Cr].[Co].[Pt] DTJAVSFDAWLDHQ-UHFFFAOYSA-N 0.000 description 1
- AUJAHATZHYPIKX-UHFFFAOYSA-N [Mn].[Rh].[Pt] Chemical compound [Mn].[Rh].[Pt] AUJAHATZHYPIKX-UHFFFAOYSA-N 0.000 description 1
- QVOSBSSLEDDREC-UHFFFAOYSA-N [Mn].[Rh].[Ru] Chemical compound [Mn].[Rh].[Ru] QVOSBSSLEDDREC-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- UFIKNOKSPUOOCL-UHFFFAOYSA-N antimony;cobalt Chemical compound [Sb]#[Co] UFIKNOKSPUOOCL-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- GUBSQCSIIDQXLB-UHFFFAOYSA-N cobalt platinum Chemical compound [Co].[Pt].[Pt].[Pt] GUBSQCSIIDQXLB-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001803 electron scattering Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- SHMWNGFNWYELHA-UHFFFAOYSA-N iridium manganese Chemical compound [Mn].[Ir] SHMWNGFNWYELHA-UHFFFAOYSA-N 0.000 description 1
- DALUDRGQOYMVLD-UHFFFAOYSA-N iron manganese Chemical compound [Mn].[Fe] DALUDRGQOYMVLD-UHFFFAOYSA-N 0.000 description 1
- 229910001337 iron nitride Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910001004 magnetic alloy Inorganic materials 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- ZAUUZASCMSWKGX-UHFFFAOYSA-N manganese nickel Chemical compound [Mn].[Ni] ZAUUZASCMSWKGX-UHFFFAOYSA-N 0.000 description 1
- IGOJMROYPFZEOR-UHFFFAOYSA-N manganese platinum Chemical compound [Mn].[Pt] IGOJMROYPFZEOR-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910000702 sendust Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3109—Details
- G11B5/313—Disposition of layers
- G11B5/3133—Disposition of layers including layers not usually being a part of the electromagnetic transducer structure and providing additional features, e.g. for improving heat radiation, reduction of power dissipation, adaptations for measurement or indication of gap depth or other properties of the structure
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/4902—Electromagnet, transformer or inductor
- Y10T29/49021—Magnetic recording reproducing transducer [e.g., tape head, core, etc.]
- Y10T29/49032—Fabricating head structure or component thereof
- Y10T29/49048—Machining magnetic material [e.g., grinding, etching, polishing]
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electromagnetism (AREA)
- Magnetic Heads (AREA)
- Hall/Mr Elements (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000331088A JP2002133614A (ja) | 2000-10-30 | 2000-10-30 | 薄膜磁気ヘッドおよびその製造方法 |
| US09/983,972 US6947261B2 (en) | 2000-10-30 | 2001-10-26 | Thin film magnetic head and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000331088A JP2002133614A (ja) | 2000-10-30 | 2000-10-30 | 薄膜磁気ヘッドおよびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002133614A true JP2002133614A (ja) | 2002-05-10 |
| JP2002133614A5 JP2002133614A5 (enExample) | 2004-08-19 |
Family
ID=18807495
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000331088A Pending JP2002133614A (ja) | 2000-10-30 | 2000-10-30 | 薄膜磁気ヘッドおよびその製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US6947261B2 (enExample) |
| JP (1) | JP2002133614A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7031119B2 (en) | 2002-08-30 | 2006-04-18 | Hitachi, Ltd. | CPP-type magnetic head with less deformation and a magnetic recording/reproducing system using the same |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6785099B2 (en) * | 2002-02-04 | 2004-08-31 | Hitachi Global Storage Technologies Netherlands B.V. | Read gap improvements through high resistance magnetic shield layers |
| JP3815676B2 (ja) * | 2002-10-02 | 2006-08-30 | Tdk株式会社 | 磁気抵抗効果素子、薄膜磁気ヘッド、磁気ヘッド装置及び磁気記録再生装置 |
| US6995957B2 (en) * | 2003-03-18 | 2006-02-07 | Hitachi Global Storage Technologies Netherland B.V. | Magnetoresistive sensor having a high resistance soft magnetic layer between sensor stack and shield |
| US20060250726A1 (en) * | 2005-05-09 | 2006-11-09 | Hitachi Global Storage Technologies Netherlands B. V. | Shield structure in magnetic recording heads |
| US7606009B2 (en) * | 2006-03-15 | 2009-10-20 | Hitachi Global Storage Technologies Netherlands B.V. | Read sensor stabilized by bidirectional anisotropy |
| WO2011065323A1 (ja) * | 2009-11-27 | 2011-06-03 | 日本電気株式会社 | 磁気抵抗効果素子、および磁気ランダムアクセスメモリ |
| JP5132706B2 (ja) * | 2010-03-31 | 2013-01-30 | 株式会社東芝 | 磁気ヘッド、磁気ヘッドアセンブリおよび磁気記録再生装置 |
| US8976492B1 (en) * | 2013-10-29 | 2015-03-10 | HGST Netherlands B.V. | Magnetic head having two domain control layers for stabilizing magnetization of the hard bias layer |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60239911A (ja) | 1984-05-11 | 1985-11-28 | Fujitsu Ltd | 磁気抵抗効果型再生ヘツド |
| US4918554A (en) | 1988-09-27 | 1990-04-17 | International Business Machines Corporation | Process for making a shielded magnetoresistive sensor |
| JPH0782622B2 (ja) | 1992-12-04 | 1995-09-06 | 日本電気株式会社 | 磁気抵抗効果型磁気ヘッド |
| US5515221A (en) * | 1994-12-30 | 1996-05-07 | International Business Machines Corporation | Magnetically stable shields for MR head |
| US5838521A (en) * | 1995-04-17 | 1998-11-17 | Read-Rite Corporation | Magnetoresistive transducer having laminated magnetic shields |
| US6038106A (en) * | 1995-05-10 | 2000-03-14 | International Business Machines Corporation | Piggyback magneto-resistive read/write tape head with optimized process for same gap read/write |
| JP3388685B2 (ja) * | 1996-04-01 | 2003-03-24 | ティーディーケイ株式会社 | 磁気ヘッド |
| SG68063A1 (en) * | 1997-07-18 | 1999-10-19 | Hitachi Ltd | Magnetoresistive effect type reproducing head and magnetic disk apparatus equipped with the reproducing head |
| JPH11161920A (ja) | 1997-09-29 | 1999-06-18 | Hitachi Ltd | 記録再生ヘッド及びそれを用いたヘッド・ディスク・アセンブリと磁気ディスク装置 |
| JP2001084536A (ja) | 1999-09-17 | 2001-03-30 | Alps Electric Co Ltd | 薄膜磁気ヘッド |
| JP2001167408A (ja) * | 1999-12-09 | 2001-06-22 | Tdk Corp | 薄膜磁気ヘッドおよびその製造方法 |
-
2000
- 2000-10-30 JP JP2000331088A patent/JP2002133614A/ja active Pending
-
2001
- 2001-10-26 US US09/983,972 patent/US6947261B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7031119B2 (en) | 2002-08-30 | 2006-04-18 | Hitachi, Ltd. | CPP-type magnetic head with less deformation and a magnetic recording/reproducing system using the same |
| US7154713B2 (en) | 2002-08-30 | 2006-12-26 | Hitachi Global Storage Technologies Japan, Ltd. | CPP-type magnetic head with less deformation and a magnetic recording/reproducing system using the same |
Also Published As
| Publication number | Publication date |
|---|---|
| US20020075609A1 (en) | 2002-06-20 |
| US6947261B2 (en) | 2005-09-20 |
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