JP2002124595A - Semiconductor device and production method therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve yield by preventing the terminal part of a hanging lead from being damaged. SOLUTION: This device is composed of a tab for supporting a semiconductor chip, a sealing part 3 formed by sealing the semiconductor chip with resins, a hanging lead 1e, with which a projecting part integrated with the tab, straightly extended from the tab and protruded in the direction of the width and a wide part 1h are formed a little inward from the terminal part, plural leads 1a located on the peripheral edge part of a rear surface 3a of the sealing part 3 while exposing a plane 1g to be connected and a wire for connecting the pad of the semiconductor chip and the lead 1a. Since the projecting part and the wide part 1h are formed on the hanging lead 1e and the projecting part is buried in the sealing part 3, the engaging force of the hanging lead 1e and the sealing part 3 can be improved and when cutting the hanging lead, the hanging lead 1e can be prevented from being damaged from the sealing part 3 close to the terminal part thereof.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing technique, and more particularly to a technique effective when applied to improve the yield of a peripheral semiconductor device.

[0002]

2. Description of the Related Art The technology described below studies the present invention,
Upon completion, they were examined by the inventor, and the outline is as follows.

As a miniaturized resin-encapsulated semiconductor device, CSP (Chip Scale Package) or QFN
A small semiconductor package called a “Quad Flat Non-leaded Package” having a chip size or slightly larger than a semiconductor chip has been developed.

In the QFN, a plurality of leads are arranged on a peripheral portion of a back surface (a surface on a semiconductor device mounting side) of a sealing portion so as to expose a connection surface thereof. Called shape.

The QFN has a structure in which a tab for supporting a semiconductor chip is exposed on the back surface of a sealing portion (hereinafter, referred to as a tab exposure structure) and a structure in which the tab is embedded in a sealing portion and is not exposed. Hereinafter, this is called a tab embedding structure).

In the tab embedding structure, a method has been devised in which the back surface of the tab is thinned by half-etching, pressing or the like at the time of manufacturing a lead frame, thereby embedding the tab in a sealing portion.

Further, when cutting the suspension leads after molding, it is easier to cut only the suspension leads made of metal than cutting the molding resin of the sealing portion and the suspension leads together, so that the tab is supported. The ends of the suspension leads leave the thickness of the lead frame itself without being half-etched. As a result, the ends of the suspension leads are exposed at the peripheral edge of the back surface of the sealing portion.

Incidentally, a semiconductor device having a tab-embedded structure is disclosed in, for example, Japanese Patent Application Laid-Open No. 10-189830.
The structure and manufacturing method are described.

[0009]

However, in the above-described semiconductor device (QFN) having the tab-embedded structure, since the portion of the thickness of the lead frame which is not half-etched is left at the end of the suspension lead, the suspension lead is cut. Occasionally, the cutting stress concentrates on the boundary between the half-etched portion and the non-etched portion, and the end of the suspension lead is triggered and falls off the sealing portion.

That is, when cutting the suspension lead, a force acts in a direction in which the suspension lead is pulled out from the sealing portion.
The problem is that the ends of the suspension leads are missing.

This causes a problem that the yield of QFN is reduced.

An object of the present invention is to provide a semiconductor device and a method for manufacturing the same, which prevent a loss of an end of a suspension lead and improve the yield.

The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings.

[0014]

SUMMARY OF THE INVENTION Among the inventions disclosed in the present application, the outline of a representative one will be briefly described.
It is as follows.

That is, in the semiconductor device of the present invention, a thin tab supporting a semiconductor chip, a sealing portion formed by sealing the semiconductor chip with a resin, and extending from the tab integrally with the tab. And a suspension lead that is exposed on the semiconductor device mounting side surface of the sealing portion and formed with a convex portion or a wide portion protruding in the width direction, and is connected to the semiconductor device mounting side surface of the sealing portion. The semiconductor device includes a plurality of leads having exposed surfaces, and wires connecting the surface electrodes of the semiconductor chip and the corresponding leads.

According to the present invention, the strength against the force in the lead pull-out direction at the time of cutting the lead can be increased by the convex portion or the wide portion.

Thus, it is possible to prevent the ends of the suspension leads from being lost at the time of cutting the leads, thereby improving the yield of the semiconductor device.

Further, a method of manufacturing a semiconductor device according to the present invention
A thin tab capable of supporting a semiconductor chip, a suspension lead formed integrally with the tab and extending from the tab and having a convex portion or a wide portion protruding in the width direction, and disposed around the tab. Preparing a lead frame having a plurality of leads; mounting the semiconductor chip on the tab of the lead frame; and wire-connecting the surface electrodes of the semiconductor chip and the corresponding leads of the lead frame. And connecting the lead to the semiconductor device mounting side surface of the sealing portion and exposing the projecting portion or the wide portion of the suspension lead to the sealing portion to form the sealing portion. A step of forming a stopper and sealing the semiconductor chip with a resin; and a step of separating the lead from the lead frame.

[0019]

Embodiments of the present invention will be described below in detail with reference to the drawings. In all the drawings for describing the embodiments, members having the same functions are denoted by the same reference numerals, and the repeated description thereof will be omitted.

FIGS. 1, 2 and 3 show Q of this embodiment.
FIGS. 4 and 5 are views showing an example of the structure of the FN, FIGS. 4 and 5 are views of a lead frame, and FIG. 6 is a manufacturing process flow chart showing a procedure of assembling the QFN.

The semiconductor device of this embodiment is a small semiconductor package of a resin-sealed type and a surface mount type. Here, the QFN 5 will be described as an example of the semiconductor device.

As shown in FIG. 1 (c), the QFN 5 has a connection surface 1g of a lead 1a as a plurality of external terminals.
Is a peripheral-type semiconductor package which is arranged to be exposed along the peripheral portion of a semiconductor device mounting side surface (hereinafter referred to as a back surface 3a) of a sealing portion 3 formed by a resin mold, and each lead 1a is The inner lead embedded in the sealing portion 3 and the outer lead exposed on the back surface 3a of the sealing portion 3 have both functions.

Further, in the QFN 5, the tab 1b for supporting the semiconductor chip 2 is processed to be thinner than the lead 1a (for example, about half the thickness of the lead 1a).
Therefore, at the time of resin sealing, as the tab 1b is formed thin, the mold resin also wraps around the back surface 1d side of the tab 1b, and the tab 1b is embedded in the sealing portion 3, as shown in FIG. Tab embedded structure.

As a processing method for making the tab 1b thinner than the lead 1a, etching (half etching) or pressing is preferable. Here, a case where the tab 1b is thinned by half etching will be described.

The structure of the QFN 5 will be described in detail with reference to FIGS. 1 to 5. FIG. 1A shows a thin tab 1b for supporting the semiconductor chip 2 and a semiconductor chip 2 formed by resin sealing. , (B), is integrally formed with and supports the tab 1b, extends straight from the tab 1b, is exposed at four corners of the back surface 3a of the sealing portion 3, and extends in the width direction. The convex portion 1f and the wide portion 1h shown in FIG.
Is a suspension lead 1e formed slightly inward from the end.
And a plurality of leads 1a as external terminals having exposed surfaces 1g exposed at the peripheral portion of the back surface 3a of the sealing portion 3, and pads (surface electrodes) 2a of the semiconductor chip 2 shown in FIG. And a bonding wire 4 for connecting the lead 1a corresponding to the tab 1b. The tab 1b and the projection 1f of the suspension lead 1e are embedded in the sealing portion 3.

That is, the QFN 5 is formed such that the projecting portion 1f and the wide portion 1
h are formed, the convex portion 1f is embedded in the sealing portion 3, and the wide portion 1h is covered with the sealing portion 3 except for the bottom surface, so that the suspension lead 1e, the sealing portion 3 It is possible to increase the biting power of the garment.

Therefore, it is possible to increase the strength of preventing the lead from coming off against the force in the pulling-out direction of the suspension lead 1e when the suspension lead is cut, and as a result, the breakage from the sealing portion 3 near the end of the suspension lead 1e. Can be prevented.

The protrusion 1f formed slightly inside the end of the suspension lead 1e is formed to protrude on both sides in the width direction as shown in FIG. 5 (a). As shown in FIG. 5B, the suspension lead 1e is not formed over the whole in the thickness direction of the suspension lead 1e so as to be completely embedded in the sealing portion 3, but is formed on the upper side of the thickness. It is formed in about half the place.

Thus, the projection 1f can be embedded in the sealing portion 3.

Further, as shown in FIG.
At a position slightly inside the end, the width is wider than the end, and as shown in FIG. 5B, a wide portion 1h is formed over the entire thickness direction.

That is, as shown in FIG. 3, if the width of the end of the suspension lead 1e is A and the width of the wide portion 1h is B, then A <B.

The wide portion 1h of the suspension lead 1e
3 is formed so as to gradually increase in width from the end of the suspension lead 1e to the inside as shown in FIG.
As shown in FIG. 5B, the wide ends substantially near the center of the protrusion 1f in the lead extending direction, and the relationship of A <B shown in FIG. 5A is established.

Further, in the suspension lead 1e, a region inside the vicinity of substantially the center of the protrusion 1f in the lead extending direction has substantially the same width as the end of the suspension lead 1e.

In the QFN 5, leads 1a for signals and the like are arranged on both sides of the suspension leads 1e at the corners of the sealing portion 3 as shown in FIG. Therefore, the distance between the suspension lead 1e and the lead 1a arranged adjacent thereto is determined by the following two conditions.

First, the first condition is that the lead frame 1
This is the condition for processing.

That is, a frame standard is defined for the lead frame 1, and the minimum value of the lead interval is set to about 80% of the thickness of the lead frame 1 when processing by etching, pressing or the like.

Therefore, the minimum distance between the suspension lead 1e and the lead 1a disposed adjacent thereto is also about 80% of the plate thickness. For example, in the case of the lead frame 1 having a plate thickness of 0.2 mm, the suspension lead 1e and the lead Adjacent lead 1a
Is 0.16 mm.

The second condition is a relationship with the board side terminal of the mounting board on which the QFN 5 is mounted.

Usually, the lead 1a of QFN5 (exposed portion)
Since the area of the board side terminal is larger than that of the
And the suspension lead 1e and the lead 1 adjacent thereto
Although it is possible to reduce the distance to a, this is due to the size of the board-side terminals of the mounting board.

Therefore, the distance between the suspension lead 1e in the QFN 5 and the lead 1a adjacent thereto is often determined by the processing conditions of the lead frame 1.

Further, the tab 1b of the QFN 5 according to the present embodiment.
Is a cross shape as shown in FIG. 4, but the flat shape of the tab 1b is not particularly limited, and may be a circle or a square other than the cross.

Further, the tab 1b is supported at its four corners by the suspension leads 1e, but the number of suspension leads 1e and the supporting positions thereof are not particularly limited.

The lead frame 1 shown in FIG. 4 shows only a package area corresponding to one QFN 5 in a multi-cavity frame in which a plurality of QFNs 5 can be assembled together. The frame 1 may be, for example, one in which a plurality of the package regions are arranged in one column, or one in which a plurality of the package regions are arranged in a matrix in a plurality of columns × a plurality of rows.

The lead frame 1 is made of, for example, copper, and has a thickness of about 0.15 to 0.2 mm.

Therefore, the thickness of the non-etched portions of the suspension leads 1e (the portions that are not half-etched) and the thickness of each lead 1a are, for example, about 0.15 to 0.2 mm, and the thickness of the tab 1b is , Which is about 1/2.

Further, as shown in FIG. 2, the semiconductor chip 2 is fixed to the chip supporting surface 1c of the tab 1b by a die bonding material such as a silver paste.

The bonding wire 4 for connecting the pad 2a of the semiconductor chip 2 and the corresponding lead 1a is, for example, a gold wire.

Further, the sealing portion 3 is formed by resin sealing by a molding method, and a sealing resin (mold resin) used at this time is, for example, a thermosetting epoxy resin.

As shown in FIG. 2, a solder plating 6 for solder connection at the time of mounting on a mounting board is provided on the connection surface 1g of each lead 1a exposed at the peripheral portion of the back surface 3a of the sealing portion 3. Are formed.

In place of the solder plating 6, palladium (Pd) plating or the like may be formed.

Next, a method of manufacturing the QFN 5 according to the present embodiment will be described with reference to a manufacturing process flow chart shown in FIG.

First, a thin tab 1b capable of supporting the semiconductor chip 2 and a projection 1f supporting the tab 1b integrally with the tab 1b and extending straight from the tab 1b and projecting to both sides in the width direction; The wide portion 1h has an end (FIG. 5 (a),
A lead frame 1 shown in FIG. 4 having a suspension lead 1e formed slightly inside the mold line 8) shown in FIG. 4B and a plurality of leads 1a arranged around the tab 1b is prepared (step S1). ).

In the lead frame 1, as shown in FIGS. 2 and 5 (b), the back surface 1d side of the tab 1b is thinned by half etching.

On the other hand, after preparing the semiconductor chip 2 having the semiconductor integrated circuit formed on the main surface 2b shown in FIG. 2, the semiconductor chip 2 is supplied, and then, as shown in step S2,
Die bonding for bonding the chip supporting surface 1c of the tab 1b of the lead frame 1 and the back surface 2c of the semiconductor chip 2 is performed.

That is, die bonding (also referred to as chip mount) for fixing (mounting) the semiconductor chip 2 to the tab 1b of the lead frame 1 via the die bonding material (for example, silver paste) with the main surface 2b facing upward is performed. Do.

Subsequently, wire bonding is performed to connect the pads 2a of the semiconductor chip 2 and the corresponding leads 1a of the lead frame 1 with wires 4 such as gold wires (step S3).

After that, as shown in step S4, resin sealing of the semiconductor chip 2 is performed by molding (here, transfer molding).

Here, the connection surface 1g of each lead 1a is exposed at the peripheral portion of the back surface 3a of the sealing portion 3 and is arranged.
As shown in FIG. 1C, a part of the suspension lead 1e is exposed at four corners of the back surface 3a, and the projection 1f and the wide portion 1h are joined to the sealing portion 3 to form the sealing portion 3. Form.

At this time, the projection 1f of the suspension lead 1e is formed slightly inside the end of the suspension lead 1e, and as shown in FIG. 5B, in the thickness direction of the suspension lead 1e. The protrusion 1 f is embedded in the sealing portion 3 because it is formed at about half of the upper side.

Further, since the wide portion 1h is formed at a position slightly inside the end portion and over the entire thickness direction,
As shown in FIG. 3, the width (A) of the end of the suspension lead 1e and the width (B) of the wide portion 1h are exposed to the corners of the back surface 3a of the sealing portion 3 in a state where A <B. I do.

Thereafter, as shown in step S5, lead cutting (singulation) for cutting and separating each lead 1a and the suspension lead 1e from the lead frame 1 is performed.

At this time, a convex portion 1f and a wide portion 1h are formed slightly inside the end of the suspension lead 1e, and the convex portion 1f is embedded in the sealing portion 3 so that the suspension lead 1e is formed. Biting force between the wire and the sealing portion 3 can be increased, so that the strength of the suspension lead 1e against the force in the pull-out direction at the time of cutting the suspension lead can be increased, and the loss of the suspension lead 1e can be prevented. Can be.

As a result, the QFN 5 shown in FIG. 1 is completed (step S6).

According to the QFN 5 (semiconductor device) and the method of manufacturing the same according to the present embodiment, the following operational effects can be obtained.

That is, by forming the convex portion 1f or the wide portion 1h protruding in the width direction on the suspension lead 1e, it is possible to increase the strength against the force in the lead pull-out direction when the suspension lead 1e is cut. it can.

That is, the biting force between the suspension lead 1e and the sealing portion 3 is enhanced by the convex portion 1f and the wide portion 1h. Since the lead 1e is locked by the convex portion 1f and the wide portion 1h, the suspension lead 1e
Does not fall off the sealing portion 3.

Therefore, the suspension lead 1 when cutting the lead
The loss of the end of e can be prevented.

As a result, the yield of QFN5 can be improved.

In the QFN 5 of this embodiment, both the convex portion 1f and the wide portion 1h are formed.
By embedding f in the sealing portion 3, it is possible to further increase the strength of preventing the lead pulling out (the biting force between the lead 1 a and the sealing portion 3) against the force in the lead pulling out direction.

Thus, the yield of QFN 5 can be further improved.

As described above, the invention made by the inventor has been specifically described based on the embodiments of the present invention. However, the present invention is not limited to the above embodiments of the invention, and does not depart from the gist of the invention. It is needless to say that various changes can be made.

For example, the projection 1f and the wide portion 1h formed on the suspension lead 1e do not necessarily have to be formed, and it is sufficient that at least one of them is formed. Furthermore, both need not necessarily be completely embedded in the sealing portion 3.

A description will now be given of a suspension lead 1e according to a modification shown in FIGS.

The suspension lead 1e of the modified example shown in FIGS. 7A, 7B and 7C has only the wide portion 1h formed slightly inside the end portion, and extends over the entire thickness direction. A wide portion 1h is formed. That is, the suspension lead 1e in which the convex portion 1f and the wide portion 1h are formed as described in the above-described embodiment has a shape in which the convex portions 1f on both sides are removed.

Also in this case, if the width of the end of the suspension lead 1e is A and the width of the wide portion 1h is B, A <B. The strength can be increased, and as a result, it is possible to prevent the end of the suspension lead from being broken at the time of cutting the lead.

Further, since the wide portion 1h is formed to have the same width over the entire thickness direction, the lead frame 1 (see FIG. 4) can be easily manufactured by press working.

The suspension lead 1e of the modification shown in FIGS. 8A, 8B and 8C has only the protrusion 1f formed slightly inside the end. That is, the suspension lead 1e in which the convex portion 1f and the wide portion 1h are formed as described in the above embodiment has a shape in which the wide portion 1h is removed.

In this case, the width of the end of the suspension lead 1e is A
Assuming that the width of the portion inside the convex portion 1f is B, A = B
And the lead width is the same, but since the protrusions 1f are formed on both sides similarly to the suspension lead 1e of the above-described embodiment, the strength against the force in the lead pulling direction at the time of cutting the lead is reduced. As a result, it is possible to prevent the end of the suspension lead from being lost at the time of cutting the lead.

The suspension lead 1e of the modification shown in FIGS. 9 (a), 9 (b) and 9 (c) has only the protrusion 1f formed slightly inside the end portion, similarly to the suspension lead 1e of FIG. At this time, the projection 1f is formed over the entire suspension lead 1e in the plate thickness direction.

In this case, as shown in FIG. 9A, if the width of the end of the suspension lead 1e is A and the width of the exposed portion of the projection 1f slightly inside the end is B, then A < B
As in the above embodiment, it is possible to increase the strength with respect to the force in the lead pulling direction at the time of cutting the lead, and as a result, it is possible to prevent the end of the suspension lead from being broken at the time of cutting the lead.

Further, since the projection 1f is formed over the entire thickness direction, the lead frame 1 (see FIG. 4) can be easily manufactured by press working.

The suspension lead 1e of the modified example shown in FIGS. 10A, 10B and 10C has a wide portion 1h as shown in FIG.
Is formed, only the protrusions 1f are formed on both sides of a portion slightly inside from the end portion, and the length of the non-etched portion at the end portion of the suspension lead 1e of the above embodiment is formed to be long.

In this case, the width of the end of the suspension lead 1e is A
Assuming that the width of the portion inside the convex portion 1f is B, A = B
Although the lead width is the same, the protrusions 1f which are substantially the same as the suspension leads 1e of the above embodiment are formed on both sides, so that the strength against the force in the lead pulling direction at the time of cutting the lead is reduced. As a result, it is possible to prevent the end of the suspension lead from being lost at the time of cutting the lead.

Further, by forming the length of the non-etched portion at the end of the suspension lead 1e long, the corner of the sealing portion 3 can be formed outside, and the chamfer of the corner of the sealing portion 3 can be reduced. .

In the above embodiment, the case where the semiconductor device is the peripheral type QFN 5 has been described.
The semiconductor device includes a lead 1 as shown in a modification of FIG.
For example, a ball terminal package 7 in which solder balls 7a are provided as external terminals on the connected surface 1g of a may be used.

That is, the semiconductor device of the modification shown in FIG. 11 is a ball terminal package 7 in which solder balls 7a are provided as external terminals on the connection surface 1g of the leads 1a.
Also in such a semiconductor device, the same operation and effect as the QFN 5 described in the above embodiment can be obtained.

Further, in the above-described embodiment, the QFN 5 having the tab-embedded structure has been described. However, the QFN 5 may have the tab-exposed structure.

Therefore, the semiconductor device may be of a resin-sealed type assembled using the lead frame 1 and of a peripheral type having a structure in which at least the ends of the suspension leads 1 e are exposed on the back surface 3 a of the sealing portion 3. For example, a semiconductor device other than the QFN 5 and the ball terminal package 7 may be used.

[0089]

Advantageous effects obtained by typical ones of the inventions disclosed in the present application will be briefly described.
It is as follows.

(1). By forming a convex portion or a wide portion protruding in the width direction of the suspension lead, it is possible to increase the strength against the force in the lead pull-out direction at the time of cutting the lead. Therefore, it is possible to prevent the end of the suspension lead from being lost at the time of cutting the lead, and to improve the yield of the semiconductor device.

(2). By forming both the convex portion and the wide portion on the suspension lead, the strength against the force in the lead pull-out direction can be further increased. Further, since the convex portion of the suspension lead is embedded in the sealing portion, the strength with respect to the force in the lead withdrawal direction can be further increased. Thereby, the yield of the semiconductor device can be further improved.

[Brief description of the drawings]

FIGS. 1A, 1B, and 1C are diagrams showing an example of the structure of a semiconductor device (QFN) according to an embodiment of the present invention;
(A) is a plan view, (b) is a side view, and (c) is a bottom view.

FIG. 2 is a cross-sectional view showing a cross-sectional structure taken along a line CC of FIG. 1 (c).

FIG. 3 is an enlarged partial bottom view showing the structure of a portion A in FIG. 1 (c) in an enlarged manner.

FIG. 4 is a partial plan view showing one example of a structure of a lead frame used for assembling the QFN shown in FIG. 1;

5 (a) and 5 (b) are enlarged views showing a structure of a portion B in FIG. 4, where (a) is an enlarged partial plan view and (b) is (a)
FIG.

FIG. 6 is a manufacturing process flow chart showing an example of an assembling procedure in the method for manufacturing the QFN shown in FIG. 1;

7 (a), (b), and (c) are views showing a QFN bottom structure and a structure of a suspension lead by a suspension lead according to a modification example of the suspension lead of the QFN shown in FIG. 1; FIG. FIG. 1C is an enlarged partial bottom view of a modification corresponding to the portion A in FIG.
(B) is an enlarged partial plan view of a modification corresponding to the portion B in FIG. 4, and (c) is a side view of (b).

8 (a), (b), and (c) are diagrams showing a QFN bottom structure and a structure of a suspension lead by a suspension lead of a modification of the suspension lead of the QFN shown in FIG. 1; FIG. FIG. 1C is an enlarged partial bottom view of a modification corresponding to the portion A in FIG.
(B) is an enlarged partial plan view of a modification corresponding to the portion B in FIG. 4, and (c) is a side view of (b).

9A, 9B, and 9C are diagrams showing a QFN bottom surface structure and a suspension lead structure using suspension leads of a modification example of the suspension lead of the QFN shown in FIG. 1, and FIG. FIG. 1C is an enlarged partial bottom view of a modification corresponding to the portion A in FIG.
(B) is an enlarged partial plan view of a modification corresponding to the portion B in FIG. 4, and (c) is a side view of (b).

10 (a), (b), and (c) are diagrams showing a QFN bottom structure and a suspension lead structure using suspension leads of a modification of the suspension lead of the QFN shown in FIG. 1; FIG. FIG. 1C is an enlarged partial bottom view of a modification corresponding to the portion A in FIG.
(B) is an enlarged partial plan view of a modification corresponding to the portion B in FIG. 4, and (c) is a side view of (b).

11 is a cross-sectional view showing a structure of a semiconductor device according to a modification example of the QFN shown in FIG.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Lead frame 1a Lead 1b Tab 1c Chip support surface 1d Back surface 1e Suspended lead 1f Convex portion 1g Connected surface 1h Wide portion 2 Semiconductor chip 2a Pad (surface electrode) 2b Main surface 2c Back surface 3 Sealing portion 3a Back surface (semiconductor device mounting) 4 wire 5 QFN (semiconductor device) 6 solder plating 7 ball terminal package (semiconductor device) 7a solder ball 8 mold line

Claims (5)

[Claims] 1. A resin-encapsulated semiconductor device, comprising: a thin tab supporting a semiconductor chip; a sealing portion formed by resin-sealing the semiconductor chip; A suspending lead extending from a tab and exposed to a surface of the sealing portion on the semiconductor device mounting side and having a convex portion or a wide portion protruding in the width direction; and a suspension lead on the semiconductor device mounting side of the sealing portion. A semiconductor device, comprising: a plurality of leads having a surface to be connected exposed with a surface; and wires connecting a surface electrode of the semiconductor chip and the corresponding lead. 2. A semiconductor device of a resin-sealed type, comprising: a thin tab supporting a semiconductor chip; a sealing portion formed by resin-sealing the semiconductor chip; A suspending lead extending from a tab and exposed to a surface of the sealing portion on the semiconductor device mounting side and formed with a convex portion and a wide portion protruding in the width direction; and a suspension lead on the semiconductor device mounting side of the sealing portion. A semiconductor device, comprising: a plurality of leads having a surface to be connected exposed with a surface; and wires connecting a surface electrode of the semiconductor chip and the corresponding lead. 3. A resin-sealed semiconductor device, comprising: a thin tab supporting a semiconductor chip; a sealing portion formed by resin-sealing the semiconductor chip; A suspension lead extending straight and supporting the semiconductor device mounting side of the sealing portion and having a convex portion and a wide portion projecting in the width direction; and A plurality of leads arranged such that the surface to be connected is exposed on the surface on the semiconductor device mounting side, and wires connecting the surface electrodes of the semiconductor chip and the leads corresponding thereto; A semiconductor device embedded in a sealing portion. 4. A resin-sealed semiconductor device, comprising: a thin tab supporting a semiconductor chip; a sealing portion formed by resin-sealing the semiconductor chip; And a projection that extends straight and is exposed at a corner of the semiconductor device mounting side surface of the sealing portion, and a protrusion and a wide portion projecting in the width direction are formed at locations slightly inside the end. A lead, a plurality of external terminals having exposed surfaces disposed at a peripheral portion of a surface of the sealing portion on the semiconductor device mounting side, and a surface electrode of the semiconductor chip; A semiconductor device, comprising: a wire connecting a lead; wherein the tab and the protrusion are embedded in the sealing portion. 5. A suspension lead having a thin plate-like tab capable of supporting a semiconductor chip, a projection or a wide portion extending from the tab integrally with the tab and projecting in the width direction; A step of preparing a lead frame having a plurality of leads arranged around; a step of mounting the semiconductor chip on the tab of the lead frame; and a surface electrode of the semiconductor chip and a corresponding one of the lead frame. Connecting the lead with a wire, exposing a connected surface of the lead to a surface of the sealing portion on the semiconductor device mounting side, and connecting the convex portion or the wide portion of the suspension lead to the sealing portion. A step of forming the sealing portion by joining to seal the semiconductor chip with a resin; and a step of separating the lead from the lead frame. The method of manufacturing a semiconductor device according to.