JP2002124521A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2002124521A5 JP2002124521A5 JP2001247541A JP2001247541A JP2002124521A5 JP 2002124521 A5 JP2002124521 A5 JP 2002124521A5 JP 2001247541 A JP2001247541 A JP 2001247541A JP 2001247541 A JP2001247541 A JP 2001247541A JP 2002124521 A5 JP2002124521 A5 JP 2002124521A5
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US641002 | 2000-08-17 | ||
| US09/641,002 US6368929B1 (en) | 2000-08-17 | 2000-08-17 | Method of manufacturing a semiconductor component and semiconductor component thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002124521A JP2002124521A (ja) | 2002-04-26 |
| JP2002124521A5 true JP2002124521A5 (enExample) | 2008-10-02 |
Family
ID=24570532
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001247541A Pending JP2002124521A (ja) | 2000-08-17 | 2001-08-17 | 半導体部品の製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US6368929B1 (enExample) |
| JP (1) | JP2002124521A (enExample) |
| TW (1) | TW521376B (enExample) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10225525A1 (de) * | 2002-06-10 | 2003-12-18 | United Monolithic Semiconduct | Verfahren zur Herstellung eines Hetero-Bipolar-Transistors und Hetero-Bipolar-Transistor |
| CN1495909A (zh) * | 2002-08-29 | 2004-05-12 | ���µ�����ҵ��ʽ���� | 双极晶体管及其制造方法 |
| US20040192059A1 (en) * | 2003-03-28 | 2004-09-30 | Mosel Vitelic, Inc. | Method for etching a titanium-containing layer prior to etching an aluminum layer in a metal stack |
| US8193609B2 (en) * | 2008-05-15 | 2012-06-05 | Triquint Semiconductor, Inc. | Heterojunction bipolar transistor device with electrostatic discharge ruggedness |
| US8937244B2 (en) * | 2008-10-23 | 2015-01-20 | Alta Devices, Inc. | Photovoltaic device |
| TW201031006A (en) * | 2008-10-23 | 2010-08-16 | Alta Devices Inc | Photovoltaic device with increased light trapping |
| US8674214B2 (en) * | 2008-10-23 | 2014-03-18 | Alta Devices, Inc. | Thin absorber layer of a photovoltaic device |
| US20120104460A1 (en) * | 2010-11-03 | 2012-05-03 | Alta Devices, Inc. | Optoelectronic devices including heterojunction |
| US9691921B2 (en) | 2009-10-14 | 2017-06-27 | Alta Devices, Inc. | Textured metallic back reflector |
| US9768329B1 (en) | 2009-10-23 | 2017-09-19 | Alta Devices, Inc. | Multi-junction optoelectronic device |
| US20170141256A1 (en) | 2009-10-23 | 2017-05-18 | Alta Devices, Inc. | Multi-junction optoelectronic device with group iv semiconductor as a bottom junction |
| US9502594B2 (en) | 2012-01-19 | 2016-11-22 | Alta Devices, Inc. | Thin-film semiconductor optoelectronic device with textured front and/or back surface prepared from template layer and etching |
| US20150380576A1 (en) | 2010-10-13 | 2015-12-31 | Alta Devices, Inc. | Optoelectronic device with dielectric layer and method of manufacture |
| US11271128B2 (en) | 2009-10-23 | 2022-03-08 | Utica Leaseco, Llc | Multi-junction optoelectronic device |
| WO2011091020A2 (en) | 2010-01-19 | 2011-07-28 | The Board Of Regents Of The University Of Texas System | Apparatuses and systems for generating high-frequency shockwaves, and methods of use |
| JP5491233B2 (ja) * | 2010-02-25 | 2014-05-14 | 日本電信電話株式会社 | バイポーラトランジスタおよびその製造方法 |
| AR087170A1 (es) | 2011-07-15 | 2014-02-26 | Univ Texas | Aparato para generar ondas de choque terapeuticas y sus aplicaciones |
| US11038080B2 (en) | 2012-01-19 | 2021-06-15 | Utica Leaseco, Llc | Thin-film semiconductor optoelectronic device with textured front and/or back surface prepared from etching |
| US10835767B2 (en) | 2013-03-08 | 2020-11-17 | Board Of Regents, The University Of Texas System | Rapid pulse electrohydraulic (EH) shockwave generator apparatus and methods for medical and cosmetic treatments |
| CA2985811A1 (en) | 2015-05-12 | 2016-11-17 | Soliton, Inc. | Methods of treating cellulite and subcutaneous adipose tissue |
| WO2017165595A1 (en) | 2016-03-23 | 2017-09-28 | Soliton, Inc. | Pulsed acoustic wave dermal clearing system and method |
| TW202448390A (zh) | 2016-07-21 | 2024-12-16 | 美商席利通公司 | 具備改良電極壽命之快速脈波電動液壓脈衝產生裝置 |
| KR102587035B1 (ko) | 2017-02-19 | 2023-10-10 | 솔리톤, 인코포레이티드 | 생물학적 매체 내의 선택적 레이저 유도 광학 파괴 |
| BR112021019737A2 (pt) | 2019-04-03 | 2021-12-07 | Soliton Inc | Sistemas, dispositivos, e métodos de tratamento de tecido e celulite por subcisão acústica não invasiva |
| JPWO2021214866A1 (enExample) * | 2020-04-21 | 2021-10-28 |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2619407B2 (ja) | 1987-08-24 | 1997-06-11 | 株式会社日立製作所 | 半導体装置の製造方法 |
| US4839303A (en) | 1987-10-13 | 1989-06-13 | Northrop Corporation | Planar bipolar transistors including heterojunction transistors and method |
| US4954457A (en) | 1988-10-31 | 1990-09-04 | International Business Machines Corporation | Method of making heterojunction bipolar transistors |
| US5001534A (en) | 1989-07-11 | 1991-03-19 | At&T Bell Laboratories | Heterojunction bipolar transistor |
| JPH03236224A (ja) * | 1990-02-14 | 1991-10-22 | Toshiba Corp | 半導体装置の製造方法 |
| JPH04722A (ja) * | 1990-04-17 | 1992-01-06 | Yokogawa Electric Corp | ヘテロ接合バイポーラトランジスタ |
| JPH044722A (ja) | 1990-04-18 | 1992-01-09 | Tategu Sogo Shosha Futaba:Kk | 構築物の配線構造 |
| US5264379A (en) | 1990-05-14 | 1993-11-23 | Sumitomo Electric Industries, Inc. | Method of making a hetero-junction bipolar transistor |
| US5272095A (en) * | 1992-03-18 | 1993-12-21 | Research Triangle Institute | Method of manufacturing heterojunction transistors with self-aligned metal contacts |
| JPH05275444A (ja) | 1992-03-25 | 1993-10-22 | Fujitsu Ltd | ヘテロ接合バイポーラ・トランジスタの製造方法 |
| US5448087A (en) | 1992-04-30 | 1995-09-05 | Trw Inc. | Heterojunction bipolar transistor with graded base doping |
| JP3502651B2 (ja) | 1993-02-08 | 2004-03-02 | トリクイント セミコンダクター テキサス、エルピー | 電極形成法 |
| US5631173A (en) | 1993-07-12 | 1997-05-20 | Texas Instruments Incorporated | Method for forming collector up heterojunction bipolar transistor having insulative extrinsic emitter |
| US6028348A (en) | 1993-11-30 | 2000-02-22 | Texas Instruments Incorporated | Low thermal impedance integrated circuit |
| US5702958A (en) | 1994-08-09 | 1997-12-30 | Texas Instruments Incorporated | Method for the fabrication of bipolar transistors |
| US5521406A (en) | 1994-08-31 | 1996-05-28 | Texas Instruments Incorporated | Integrated circuit with improved thermal impedance |
| US5683919A (en) | 1994-11-14 | 1997-11-04 | Texas Instruments Incorporated | Transistor and circuit incorporating same |
| EP0810646A3 (en) | 1996-05-13 | 1998-01-14 | Trw Inc. | Method of fabricating very high gain heterojunction bipolar transistors |
| JP3087671B2 (ja) * | 1996-12-12 | 2000-09-11 | 日本電気株式会社 | バイポーラトランジスタおよびその製造方法 |
| JPH10178021A (ja) * | 1996-12-18 | 1998-06-30 | Fujitsu Ltd | ヘテロバイポーラトランジスタ及びその製造方法 |
| US5907165A (en) * | 1998-05-01 | 1999-05-25 | Lucent Technologies Inc. | INP heterostructure devices |
| JP3279269B2 (ja) * | 1998-10-29 | 2002-04-30 | 日本電気株式会社 | ヘテロ接合バイポーラトランジスタ及びその製造方法 |
| JP3303815B2 (ja) * | 1998-12-15 | 2002-07-22 | 日本電気株式会社 | バイポーラトランジスタ |
| JP2000260975A (ja) * | 1999-03-09 | 2000-09-22 | Toshiba Corp | 電極構造 |
| JP3634976B2 (ja) * | 1999-03-11 | 2005-03-30 | 株式会社日立製作所 | 半導体装置，その製造方法，高周波電力増幅装置および無線通信装置 |
-
2000
- 2000-08-17 US US09/641,002 patent/US6368929B1/en not_active Expired - Lifetime
-
2001
- 2001-08-16 TW TW090120112A patent/TW521376B/zh not_active IP Right Cessation
- 2001-08-17 JP JP2001247541A patent/JP2002124521A/ja active Pending
- 2001-11-15 US US10/007,754 patent/US6855965B2/en not_active Expired - Fee Related