JP2002094125A - Lead frame and led device using the same - Google Patents
Lead frame and led device using the sameInfo
- Publication number
- JP2002094125A JP2002094125A JP2000281202A JP2000281202A JP2002094125A JP 2002094125 A JP2002094125 A JP 2002094125A JP 2000281202 A JP2000281202 A JP 2000281202A JP 2000281202 A JP2000281202 A JP 2000281202A JP 2002094125 A JP2002094125 A JP 2002094125A
- Authority
- JP
- Japan
- Prior art keywords
- lead frame
- lead
- tie bar
- led device
- leads
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、リードフレーム及
びそれを用いたＬＥＤ装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a lead frame and an LED device using the same.
【０００２】[0002]
【従来の技術】一般的なリードタイプのＬＥＤ装置の製
造法の概略を説明する。図４に、従来のＬＥＤ装置用リ
ードフレームの正面図を示す。まず、鉄板などの導電材
料をプレス加工してリードフレーム１の各部品（リード
２，２’、タイバー３、外枠５）を一体成形し、その表
面にＣｕ、Ａｇなどをメッキする。次にリード２の上端
部にＬＥＤ素子（不図示）を装着し、ＬＥＤ素子の端子
部とリード２’を金属細線（不図示）で接続する。次に
ＬＥＤ素子及び金属細線の全体と、リード２，２’の一
部を覆うように透明な樹脂（不図示）で封止する。そし
て、タイバー３をカットし、フラックス工程で酸化膜を
除去した後、半田メッキすることにより酸化を防止す
る。以上の工程でＬＥＤ装置が製造されている。2. Description of the Related Art An outline of a method for manufacturing a general lead type LED device will be described. FIG. 4 shows a front view of a conventional LED device lead frame. First, a conductive material such as an iron plate is pressed to integrally form the components (leads 2 and 2 ′, tie bar 3 and outer frame 5) of the lead frame 1, and the surface thereof is plated with Cu, Ag, or the like. Next, an LED element (not shown) is mounted on the upper end of the lead 2, and the terminal of the LED element is connected to the lead 2 'with a thin metal wire (not shown). Next, the entire LED element and the thin metal wire and a part of the leads 2 and 2 'are sealed with a transparent resin (not shown). Then, the tie bar 3 is cut, an oxide film is removed in a flux process, and then, solder plating is performed to prevent oxidation. The LED device is manufactured through the above steps.
【０００３】次に従来のリードフレームの形状について
説明する。図４において、タイバー３はリード２，２’
に直交し、直線状を有している。このように、リード
２，２’・・・間をタイバー３で連結することにより、リ
ード２，２’の変形を防ぎ、リードフレーム１の強度を
増している。Next, the shape of a conventional lead frame will be described. In FIG. 4, the tie bar 3 is a lead 2, 2 '.
And has a linear shape. By connecting the leads 2, 2 '... With the tie bar 3, the leads 2, 2' are prevented from being deformed, and the strength of the lead frame 1 is increased.
【０００４】また、図５に、従来の他のＬＥＤ装置用リ
ードフレームの正面図を示す。リード２，２’に直交す
る直線状のタイバー３が２本設けられている。ここで、
一方のタイバー３はより大きな断面積を有している。こ
のように、タイバー３の数を増やすか、或いはタイバー
３の断面積を大きくすることで、リード２，２’の変形
防止効果を増している。FIG. 5 is a front view of another conventional lead frame for an LED device. Two linear tie bars 3 orthogonal to the leads 2 and 2 'are provided. here,
One tie bar 3 has a larger cross-sectional area. As described above, by increasing the number of the tie bars 3 or increasing the sectional area of the tie bars 3, the effect of preventing the leads 2, 2 'from being deformed is increased.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、従来
は、個々のリードの１平断面にタイバーの結合部が２カ
所存在するため、フラックス工程で完全に酸化膜を除去
できなかった場合、半田はじきが発生しやすい状態であ
った。タイバーがカットされた後の断面は基材である鉄
などがむき出しになっているため、半田メッキ時に半田
はじき等の半田付け不良が発生しやすい。Conventionally, however, since there are two tie-bar joints in one plane section of each lead, if the oxide film cannot be completely removed in the flux step, solder repelling will occur. It was in a state that easily occurred. Since the base material such as iron is exposed in the cross section after the tie bar is cut, soldering defects such as repelling during solder plating are likely to occur.
【０００６】本発明は、上記の問題点に鑑み、半田メッ
キ時の半田付け不良を防止し、かつ従来の強度を維持し
たリードフレームを提供することを目的とする。また、
本発明は、前記リードフレームを用いたＬＥＤ装置を提
供することも目的とする。SUMMARY OF THE INVENTION In view of the above problems, an object of the present invention is to provide a lead frame which prevents soldering failure during solder plating and maintains the conventional strength. Also,
Another object of the present invention is to provide an LED device using the lead frame.
【０００７】[0007]
【課題を解決するための手段】上記目的を達成するため
に、本発明に係るリードフレームは、リード間を結合す
るタイバーを設けた半導体装置のリードフレームにおい
て、個々のリードの１平断面に前記タイバーの結合部が
２以上有しないように、タイバーの位置をずらしている
ことを特徴とするものである。In order to achieve the above-mentioned object, a lead frame according to the present invention is provided in a lead frame of a semiconductor device provided with a tie bar for coupling between leads. The position of the tie bar is shifted so that the connection portion of the tie bar does not have two or more.
【０００８】また、本発明に係るＬＥＤ装置は、前記リ
ードフレームを使用したことを特徴とするものである。Further, an LED device according to the present invention is characterized in that the above-mentioned lead frame is used.
【０００９】[0009]
【発明の実施の形態】図１に本発明のリードフレームの
正面図を示す。リード２，２’、タイバー３、及び外枠
５の一体成形によりリードフレーム１が形成される。タ
イバー３はリード２，２’に直交し、個々のリードの１
平断面には結合部４が２カ所以上有しないように、隣り
合うリード２，２’間でタイバー３を交互にずらして配
置している。このように、従来では個々のリードの１平
断面に２カ所存在したタイバーの結合部を、本発明では
個々のリードの１平断面に１カ所とすることで、半田の
なじみ性が良く、回り込み易くなり半田付け不良を防止
することができる。FIG. 1 is a front view of a lead frame according to the present invention. The lead frame 1 is formed by integrally molding the leads 2, 2 ′, the tie bar 3, and the outer frame 5. Tie bar 3 is orthogonal to leads 2 and 2 ', and
The tie-bars 3 are alternately shifted between the adjacent leads 2 and 2 ′ so that the connecting section 4 does not have two or more places in the plane section. As described above, the connection portion of the tie bar, which has conventionally existed at two places on one flat section of each lead, is changed to one place on one flat section of each lead in the present invention, so that the solder has good adaptability and the wraparound. This makes it easier to prevent poor soldering.
【００１０】次に、他の形状を有するタイバーを設けた
リードフレームの実施形態について説明する。図２に本
発明の他のリードフレームの正面図を示す。リード２，
２’、斜線状のタイバー３、及び外枠５の一体成形によ
りリードフレーム１が形成される。このように、リード
２，２’・・・間を斜線状のタイバー３で連結しても、個
々のリードの１平断面には結合部４が２カ所以上有しな
いようにタイバー３を配置でき、半田のなじみ性が良
く、回り込み易くなり半田付け不良を防止することがで
きる。Next, an embodiment of a lead frame provided with a tie bar having another shape will be described. FIG. 2 shows a front view of another lead frame of the present invention. Lead 2,
The lead frame 1 is formed by integrally molding the 2 ′, the hatched tie bar 3 and the outer frame 5. In this way, even if the leads 2, 2 '... Are connected by the oblique tie bar 3, the tie bar 3 can be arranged so that the connecting portion 4 does not have more than two places in one flat section of each lead. In addition, the solder has good adaptability and is easy to turn around, so that poor soldering can be prevented.
【００１１】なお、図１、２において、結合部４の断面
積が大きくなるに従い、半田メッキ時の半田の回り込み
が悪くなり、半田はじきが発生しやすくなるため、結合
部４の断面積はリード２，２’の変形を防止できる範囲
で、できるだけ小さくするのがよい。In FIGS. 1 and 2, the larger the cross-sectional area of the joint 4 is, the worse the wraparound of the solder during solder plating becomes and the more likely the solder is to be repelled. It is preferable to make the size as small as possible as long as deformation of 2, 2 'can be prevented.
【００１２】なお、本発明に係るリードフレームにおい
ては、個々のリードの１平断面にタイバー３の結合部４
が２以上有しないように、タイバーの位置をずらしてい
れば、タイバー３の配置、数、形状に特に制限はない。
例えば、階段状に配置してもよいし、１組のリード２，
２’間に複数のタイバー３を設けてもよいし、リード
２，２’間でタイバー３が交差していてもよく、また曲
線形状でもよい。In the lead frame according to the present invention, the connecting portion 4 of the tie bar 3
Are not particularly limited as long as the positions of the tie bars are shifted so as not to have two or more.
For example, they may be arranged in a step-like manner, or one set of leads 2
A plurality of tie bars 3 may be provided between 2 ', the tie bars 3 may intersect between the leads 2 and 2', or may have a curved shape.
【００１３】なお、本発明に係るリードフレームの製造
法は特に限定はなく、従来の製造法を採用できる。The method for manufacturing the lead frame according to the present invention is not particularly limited, and a conventional manufacturing method can be employed.
【００１４】図３に本発明のリードフレームを用いたＬ
ＥＤ装置の正面図を示す。リード２の上端部にＬＥＤ素
子７を装着し、ＬＥＤ素子７の端子部とリード２’を金
属細線８で接続し、ＬＥＤ素子７及び金属細線８の全体
と、リード２，２’の一部を覆うように透明な樹脂９で
封止したＬＥＤ装置１０である。ここで、リードフレー
ムは図１のものを用いている。リード２，２’はタイバ
ーをカットした断面の跡である結合部４を有している。
通常、タイバーカット後にはバリが残るため結合部４は
確認できる。FIG. 3 shows an example of L using the lead frame of the present invention.
1 shows a front view of an ED device. The LED element 7 is mounted on the upper end of the lead 2, the terminal of the LED element 7 is connected to the lead 2 ′ with the thin metal wire 8, and the entire LED element 7 and the thin metal wire 8 and a part of the lead 2, 2 ′ The LED device 10 is sealed with a transparent resin 9 so as to cover the LED device 10. Here, the lead frame shown in FIG. 1 is used. The leads 2 and 2 'have a joint 4 which is a trace of a cross section obtained by cutting a tie bar.
Usually, the burrs remain after the tie bar cut, so that the joint portion 4 can be confirmed.
【００１５】なお、ＬＥＤ装置１０の製造法は従来と同
様であり、タイバーカット及び半田メッキ工程を備えて
いる。タイバーカット後は、結合部４の断面は基材であ
る鉄などがむき出しになるため、半田メッキ時に半田は
じき等の半田付け不良が発生する可能性はある。しかし
ながら、個々のリードの１平断面にタイバー３の結合部
４が２カ所以上有しないように、タイバー３の位置をず
らしているため、個々のリードの１平断面に結合部４を
２カ所有している従来よりも、半田のなじみ性が良く、
回り込み易くなり半田付け不良を防止することができ
る。The method of manufacturing the LED device 10 is the same as the conventional one, and includes a tie bar cutting and a solder plating process. After the tie bar cut, the cross section of the joint portion 4 exposes the base material such as iron, so that there is a possibility that soldering failure such as solder repelling may occur at the time of solder plating. However, since the position of the tie bar 3 is shifted so that the connecting portion 4 of the tie bar 3 does not have two or more places in one plane section of each lead, two connecting portions 4 are possessed in one plane section of each lead. Compared with the conventional, the solder familiarity is better,
It becomes easy to go around and it is possible to prevent poor soldering.
【００１６】[0016]
【発明の効果】本発明に係るリードフレームにおいて、
個々のリードの１平断面にタイバーの結合部が２以上有
しないように、タイバーの位置をずらしているため、半
田メッキ時の半田のなじみ性が良く、回り込み易くなり
半田付け不良を防止することができる。また、半田はじ
きが発生しない程度に、タイバーの結合部の断面積を大
きくするか、又はリード間に複数のタイバーを設けるこ
とにより、従来の強度を維持したリードフレームを得る
ことができる。According to the lead frame of the present invention,
The positions of the tie bars are shifted so that there are no more than two tie bar joints in one plane cross section of each lead, so that the solder has good conformability during solder plating, easily turns around, and prevents poor soldering. Can be. Further, by increasing the cross-sectional area of the joint of the tie bars or by providing a plurality of tie bars between the leads to the extent that solder repelling does not occur, a lead frame maintaining the conventional strength can be obtained.
【００１７】また、本発明に係るＬＥＤ装置において
は、本発明のリードフレームを使用しているため、半田
付け不良の発生しないＬＥＤ装置を得ることができる。Further, in the LED device according to the present invention, since the lead frame of the present invention is used, it is possible to obtain an LED device free from soldering defects.
【図１】 本発明のリードフレームの正面図であ
る。FIG. 1 is a front view of a lead frame according to the present invention.
【図２】 本発明の他のリードフレームの正面図で
ある。FIG. 2 is a front view of another lead frame of the present invention.
【図３】 本発明のリードフレームを用いたＬＥＤ
装置の正面図である。FIG. 3 shows an LED using the lead frame of the present invention.
It is a front view of an apparatus.
【図４】 従来のＬＥＤ装置用リードフレームの正
面図である。FIG. 4 is a front view of a conventional LED device lead frame.
【図５】 従来の他のＬＥＤ装置用リードフレーム
の正面図である。FIG. 5 is a front view of another conventional LED device lead frame.
１ リードフレーム ２，２’ リード ３ タイバー ４ 結合部 １０ ＬＥＤ装置 DESCRIPTION OF SYMBOLS 1 Lead frame 2, 2 'lead 3 Tie bar 4 Coupling part 10 LED device
Claims (2)
導体装置のリードフレームにおいて、個々のリードの１
平断面に前記タイバーの結合部が２以上有しないよう
に、タイバーの位置をずらしていることを特徴とするリ
ードフレーム。In a lead frame of a semiconductor device provided with a tie bar for connecting leads, one of individual leads is provided.
A lead frame, wherein the position of the tie bar is shifted so that the tie bar does not have two or more joint portions in a plane cross section.
たＬＥＤ装置。2. An LED device using the lead frame according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000281202A JP2002094125A (en) | 2000-09-18 | 2000-09-18 | Lead frame and led device using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000281202A JP2002094125A (en) | 2000-09-18 | 2000-09-18 | Lead frame and led device using the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002094125A true JP2002094125A (en) | 2002-03-29 |
Family
ID=18765896
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000281202A Pending JP2002094125A (en) | 2000-09-18 | 2000-09-18 | Lead frame and led device using the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002094125A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102237484A (en) * | 2010-04-23 | 2011-11-09 | 三星Led株式会社 | Lead frame for light emitting device package, light emitting device package, and illumination apparatus |
| WO2012060336A1 (en) * | 2010-11-02 | 2012-05-10 | 大日本印刷株式会社 | Led-element mounting lead frame, resin-attached lead frame, method of manufacturing semiconductor device, and semiconductor-element mounting lead frame |
| KR101831283B1 (en) * | 2011-10-04 | 2018-02-22 | 엘지이노텍 주식회사 | Light Emitting Diode Package |
-
2000
- 2000-09-18 JP JP2000281202A patent/JP2002094125A/en active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102237484A (en) * | 2010-04-23 | 2011-11-09 | 三星Led株式会社 | Lead frame for light emitting device package, light emitting device package, and illumination apparatus |
| US9099332B2 (en) | 2010-04-23 | 2015-08-04 | Samsung Electronics Co., Ltd. | Lead frame for light emitting device package, light emitting device package, and illumination apparatus employing the light emitting device package |
| WO2012060336A1 (en) * | 2010-11-02 | 2012-05-10 | 大日本印刷株式会社 | Led-element mounting lead frame, resin-attached lead frame, method of manufacturing semiconductor device, and semiconductor-element mounting lead frame |
| US8933548B2 (en) | 2010-11-02 | 2015-01-13 | Dai Nippon Printing Co., Ltd. | Lead frame for mounting LED elements, lead frame with resin, method for manufacturing semiconductor devices, and lead frame for mounting semiconductor elements |
| US9159655B2 (en) | 2010-11-02 | 2015-10-13 | Dai Nippon Printing Co., Ltd. | Lead frame for mounting LED elements, lead frame with resin, method for manufacturing semiconductor devices, and lead frame for mounting semiconductor elements |
| US9214414B2 (en) | 2010-11-02 | 2015-12-15 | Dai Nippon Printing Co., Ltd. | Lead frame for mounting LED elements, lead frame with resin, method for manufacturing semiconductor devices, and lead frame for mounting semiconductor elements |
| US9362473B2 (en) | 2010-11-02 | 2016-06-07 | Dai Nippon Printing Co., Ltd. | Lead frame for mounting LED elements, lead frame with resin, method for manufacturing semiconductor devices, and lead frame for mounting semiconductor elements |
| US9412923B2 (en) | 2010-11-02 | 2016-08-09 | Dai Nippon Printing Co., Ltd. | Lead frame for mounting LED elements, lead frame with resin, method for manufacturing semiconductor devices, and lead frame for mounting semiconductor elements |
| US9553247B2 (en) | 2010-11-02 | 2017-01-24 | Dai Nippon Printing Co., Ltd. | Lead frame for mounting LED elements, lead frame with resin, method for manufacturing semiconductor devices, and lead frame for mounting semiconductor elements |
| US9773960B2 (en) | 2010-11-02 | 2017-09-26 | Dai Nippon Printing Co., Ltd. | Lead frame for mounting LED elements, lead frame with resin, method for manufacturing semiconductor devices, and lead frame for mounting semiconductor elements |
| US9899583B2 (en) | 2010-11-02 | 2018-02-20 | Dai Nippon Printing Co., Ltd. | Lead frame for mounting LED elements, lead frame with resin, method for manufacturing semiconductor devices, and lead frame for mounting semiconductor elements |
| KR101831283B1 (en) * | 2011-10-04 | 2018-02-22 | 엘지이노텍 주식회사 | Light Emitting Diode Package |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3547704B2 (en) | Lead frame and semiconductor device | |
| US20100052125A1 (en) | Resin sealing type semiconductor device and method of manufacturing the same, and lead frame | |
| US20060088956A1 (en) | Method for fabricating semiconductor package with short-prevented lead frame | |
| TWI787343B (en) | Substrate for mounting semiconductor element and manufacturing method thereof | |
| JP2936769B2 (en) | Lead frame for semiconductor device | |
| JP4243270B2 (en) | Manufacturing method of semiconductor device | |
| JP2002094125A (en) | Lead frame and led device using the same | |
| JP2003037236A (en) | Method for manufacturing semiconductor device, and semiconductor device manufactured by the same | |
| JP2005191574A (en) | System and method of improving solder joining reliability in integrated circuit package | |
| TWI274406B (en) | Dual gauge leadframe | |
| JP2003282810A (en) | Semiconductor device and its manufacturing method | |
| JPH02205060A (en) | Lead frame for semiconductor device | |
| JP2000114553A (en) | Semiconductor device and manufacture thereof | |
| JP4176092B2 (en) | Resin-sealed semiconductor device and manufacturing method thereof | |
| JPH04103154A (en) | Semiconductor device, manufacture thereof, and mounting method thereof | |
| JP4747188B2 (en) | Manufacturing method of semiconductor device | |
| JPH04162466A (en) | Lead frame for semiconductor device | |
| JP2934372B2 (en) | Method for manufacturing surface mount type semiconductor device | |
| JP2741787B2 (en) | Lead frame cutting method | |
| JPH01216563A (en) | Manufacture of lead frame | |
| JPH04171854A (en) | Lead frame for semiconductor device | |
| JP2022173569A (en) | Semiconductor device | |
| JPH09153569A (en) | Resin-encapsulated semiconductor device | |
| JP2005260271A (en) | Circuit member for resin-sealed semiconductor device | |
| JPH06310644A (en) | Lead frame and manufacture of the same |