JP2002083769A - 半導体薄膜及び半導体薄膜の製造方法 - Google Patents

半導体薄膜及び半導体薄膜の製造方法

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Publication number
JP2002083769A
JP2002083769A JP2000269298A JP2000269298A JP2002083769A JP 2002083769 A JP2002083769 A JP 2002083769A JP 2000269298 A JP2000269298 A JP 2000269298A JP 2000269298 A JP2000269298 A JP 2000269298A JP 2002083769 A JP2002083769 A JP 2002083769A
Authority
JP
Japan
Prior art keywords
thin film
semiconductor thin
semiconductor
heat treatment
polycrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000269298A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002083769A5 (enExample
Inventor
Junichi Sato
淳一 佐藤
Setsuo Usui
節夫 碓井
Yasuhiro Sakamoto
安広 坂本
Yoshifumi Mori
芳文 森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2000269298A priority Critical patent/JP2002083769A/ja
Priority to US09/946,898 priority patent/US6746942B2/en
Priority to KR1020010054334A priority patent/KR100862542B1/ko
Priority to CN01145068A priority patent/CN1354495A/zh
Publication of JP2002083769A publication Critical patent/JP2002083769A/ja
Priority to US10/828,882 priority patent/US7365358B2/en
Publication of JP2002083769A5 publication Critical patent/JP2002083769A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2000269298A 2000-09-05 2000-09-05 半導体薄膜及び半導体薄膜の製造方法 Pending JP2002083769A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2000269298A JP2002083769A (ja) 2000-09-05 2000-09-05 半導体薄膜及び半導体薄膜の製造方法
US09/946,898 US6746942B2 (en) 2000-09-05 2001-09-05 Semiconductor thin film and method of fabricating semiconductor thin film, apparatus for fabricating single crystal semiconductor thin film, and method of fabricating single crystal thin film, single crystal thin film substrate, and semiconductor device
KR1020010054334A KR100862542B1 (ko) 2000-09-05 2001-09-05 반도체 박막, 반도체 박막의 제조 방법, 및 단결정 반도체박막의 제조 장치, 및 단결정 박막의 제조 방법, 단결정박막 기판, 반도체 장치
CN01145068A CN1354495A (zh) 2000-09-05 2001-09-05 半导体薄膜及其生产方法和设备、及生产单晶薄膜的方法
US10/828,882 US7365358B2 (en) 2000-09-05 2004-04-21 Semiconductor thin film and method of fabricating semiconductor thin film, apparatus for fabricating single crystal semiconductor thin film, and method of fabricating single crystal thin film, single crystal thin film substrate, and semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000269298A JP2002083769A (ja) 2000-09-05 2000-09-05 半導体薄膜及び半導体薄膜の製造方法

Publications (2)

Publication Number Publication Date
JP2002083769A true JP2002083769A (ja) 2002-03-22
JP2002083769A5 JP2002083769A5 (enExample) 2007-03-15

Family

ID=18755934

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000269298A Pending JP2002083769A (ja) 2000-09-05 2000-09-05 半導体薄膜及び半導体薄膜の製造方法

Country Status (1)

Country Link
JP (1) JP2002083769A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004079812A (ja) * 2002-08-19 2004-03-11 National Institute For Materials Science 非熱的結晶回復法および微細加工方法
JP2005327865A (ja) * 2004-05-13 2005-11-24 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US7288787B2 (en) 2005-07-05 2007-10-30 Advanced Lcd Technologies Development Center Co., Ltd. Thin-film transistor, method for manufacturing thin-film transistor, and display using thin-film transistors
WO2014080728A1 (ja) * 2012-11-20 2014-05-30 株式会社日本製鋼所 レーザ処理方法およびレーザ処理装置

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004079812A (ja) * 2002-08-19 2004-03-11 National Institute For Materials Science 非熱的結晶回復法および微細加工方法
JP2005327865A (ja) * 2004-05-13 2005-11-24 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US7288787B2 (en) 2005-07-05 2007-10-30 Advanced Lcd Technologies Development Center Co., Ltd. Thin-film transistor, method for manufacturing thin-film transistor, and display using thin-film transistors
US7485505B2 (en) 2005-07-05 2009-02-03 Advanced Lcd Technologies Development Center Co., Ltd. Thin-film transistor, method for manufacturing thin-film transistor, and display using thin-film transistors
WO2014080728A1 (ja) * 2012-11-20 2014-05-30 株式会社日本製鋼所 レーザ処理方法およびレーザ処理装置
JP2014103248A (ja) * 2012-11-20 2014-06-05 Japan Steel Works Ltd:The レーザ処理方法およびレーザ処理装置
KR20150087196A (ko) * 2012-11-20 2015-07-29 가부시끼가이샤 니혼 세이꼬쇼 레이저 처리방법 및 레이저 처리장치
CN104838472A (zh) * 2012-11-20 2015-08-12 株式会社日本制钢所 激光处理方法以及激光处理装置
KR102108029B1 (ko) 2012-11-20 2020-05-07 가부시끼가이샤 니혼 세이꼬쇼 레이저 처리방법 및 레이저 처리장치

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