JP2002076435A - 半導体発光素子 - Google Patents
半導体発光素子Info
- Publication number
- JP2002076435A JP2002076435A JP2000268274A JP2000268274A JP2002076435A JP 2002076435 A JP2002076435 A JP 2002076435A JP 2000268274 A JP2000268274 A JP 2000268274A JP 2000268274 A JP2000268274 A JP 2000268274A JP 2002076435 A JP2002076435 A JP 2002076435A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- light
- emitting device
- semiconductor
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 63
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims description 25
- 238000005530 etching Methods 0.000 claims description 22
- 230000008569 process Effects 0.000 claims description 15
- 238000009792 diffusion process Methods 0.000 claims description 6
- 238000000605 extraction Methods 0.000 abstract description 14
- 150000001875 compounds Chemical class 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 229910052594 sapphire Inorganic materials 0.000 description 6
- 239000010980 sapphire Substances 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 5
- 238000013461 design Methods 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 102100033040 Carbonic anhydrase 12 Human genes 0.000 description 1
- 102100033007 Carbonic anhydrase 14 Human genes 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 101000867855 Homo sapiens Carbonic anhydrase 12 Proteins 0.000 description 1
- 101000867862 Homo sapiens Carbonic anhydrase 14 Proteins 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 235000005811 Viola adunca Nutrition 0.000 description 1
- 240000009038 Viola odorata Species 0.000 description 1
- 235000013487 Viola odorata Nutrition 0.000 description 1
- 235000002254 Viola papilionacea Nutrition 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000268274A JP2002076435A (ja) | 2000-09-05 | 2000-09-05 | 半導体発光素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000268274A JP2002076435A (ja) | 2000-09-05 | 2000-09-05 | 半導体発光素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002076435A true JP2002076435A (ja) | 2002-03-15 |
| JP2002076435A5 JP2002076435A5 (enExample) | 2007-09-06 |
Family
ID=18755073
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000268274A Pending JP2002076435A (ja) | 2000-09-05 | 2000-09-05 | 半導体発光素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002076435A (enExample) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006128202A (ja) * | 2004-10-26 | 2006-05-18 | Kyocera Corp | 発光素子およびそれを用いた照明装置 |
| KR100655163B1 (ko) | 2005-07-12 | 2006-12-08 | (주)더리즈 | 발광 소자와 이의 제조 방법 |
| KR100862530B1 (ko) * | 2006-08-29 | 2008-10-09 | 삼성전기주식회사 | 선택적 성장을 이용한 반도체 발광소자 제조방법 |
| US7675075B2 (en) | 2003-08-28 | 2010-03-09 | Panasonic Corporation | Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device |
| WO2011055462A1 (ja) | 2009-11-05 | 2011-05-12 | ウェーブスクエア，インコーポレイテッド | Ｉｉｉ族窒化物半導体縦型構造ｌｅｄチップならびにその製造方法 |
| JP2013161851A (ja) * | 2012-02-02 | 2013-08-19 | Nichia Chem Ind Ltd | 半導体発光素子 |
| US9502603B2 (en) | 2011-05-12 | 2016-11-22 | Wavesquare Inc. | Vertically structured group III nitride semiconductor LED chip and method for manufacturing the same |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0423152U (enExample) * | 1990-06-14 | 1992-02-26 | ||
| JPH07111339A (ja) * | 1993-10-12 | 1995-04-25 | Sumitomo Electric Ind Ltd | 面発光型半導体発光装置 |
| WO2000039860A1 (fr) * | 1998-12-29 | 2000-07-06 | Vasily Ivanovich Shveikin | Emetteur non coherent a injection |
-
2000
- 2000-09-05 JP JP2000268274A patent/JP2002076435A/ja active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0423152U (enExample) * | 1990-06-14 | 1992-02-26 | ||
| JPH07111339A (ja) * | 1993-10-12 | 1995-04-25 | Sumitomo Electric Ind Ltd | 面発光型半導体発光装置 |
| WO2000039860A1 (fr) * | 1998-12-29 | 2000-07-06 | Vasily Ivanovich Shveikin | Emetteur non coherent a injection |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7675075B2 (en) | 2003-08-28 | 2010-03-09 | Panasonic Corporation | Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device |
| US8207548B2 (en) | 2003-08-28 | 2012-06-26 | Panasonic Corporation | Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device |
| US8692285B2 (en) | 2003-08-28 | 2014-04-08 | Panasonic Corporation | Semiconductor light emitting device, light emitting module, lighting apparatus and display element |
| JP2006128202A (ja) * | 2004-10-26 | 2006-05-18 | Kyocera Corp | 発光素子およびそれを用いた照明装置 |
| KR100655163B1 (ko) | 2005-07-12 | 2006-12-08 | (주)더리즈 | 발광 소자와 이의 제조 방법 |
| KR100862530B1 (ko) * | 2006-08-29 | 2008-10-09 | 삼성전기주식회사 | 선택적 성장을 이용한 반도체 발광소자 제조방법 |
| WO2011055462A1 (ja) | 2009-11-05 | 2011-05-12 | ウェーブスクエア，インコーポレイテッド | Ｉｉｉ族窒化物半導体縦型構造ｌｅｄチップならびにその製造方法 |
| US8962362B2 (en) | 2009-11-05 | 2015-02-24 | Wavesquare Inc. | Vertically structured group III nitride semiconductor LED chip and method for manufacturing the same |
| US9012935B2 (en) | 2009-11-05 | 2015-04-21 | Wavesquare Inc. | Vertically structured group III nitride semiconductor LED chip and method for manufacturing the same |
| US9502603B2 (en) | 2011-05-12 | 2016-11-22 | Wavesquare Inc. | Vertically structured group III nitride semiconductor LED chip and method for manufacturing the same |
| JP2013161851A (ja) * | 2012-02-02 | 2013-08-19 | Nichia Chem Ind Ltd | 半導体発光素子 |
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