JP2002076136A5 - - Google Patents

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Publication number
JP2002076136A5
JP2002076136A5 JP2000265567A JP2000265567A JP2002076136A5 JP 2002076136 A5 JP2002076136 A5 JP 2002076136A5 JP 2000265567 A JP2000265567 A JP 2000265567A JP 2000265567 A JP2000265567 A JP 2000265567A JP 2002076136 A5 JP2002076136 A5 JP 2002076136A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2000265567A
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JP4818499B2 (ja
JP2002076136A (ja
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Priority to JP2000265567A priority Critical patent/JP4818499B2/ja
Priority claimed from JP2000265567A external-priority patent/JP4818499B2/ja
Priority to US09/796,597 priority patent/US6667206B2/en
Publication of JP2002076136A publication Critical patent/JP2002076136A/ja
Publication of JP2002076136A5 publication Critical patent/JP2002076136A5/ja
Application granted granted Critical
Publication of JP4818499B2 publication Critical patent/JP4818499B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2000265567A 2000-09-01 2000-09-01 半導体装置の製造方法 Expired - Fee Related JP4818499B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2000265567A JP4818499B2 (ja) 2000-09-01 2000-09-01 半導体装置の製造方法
US09/796,597 US6667206B2 (en) 2000-09-01 2001-03-02 Method of manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000265567A JP4818499B2 (ja) 2000-09-01 2000-09-01 半導体装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010099097A Division JP2010187013A (ja) 2010-04-22 2010-04-22 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2002076136A JP2002076136A (ja) 2002-03-15
JP2002076136A5 true JP2002076136A5 (ja) 2007-10-18
JP4818499B2 JP4818499B2 (ja) 2011-11-16

Family

ID=18752812

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000265567A Expired - Fee Related JP4818499B2 (ja) 2000-09-01 2000-09-01 半導体装置の製造方法

Country Status (2)

Country Link
US (1) US6667206B2 (ja)
JP (1) JP4818499B2 (ja)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1253929C (zh) 2003-03-04 2006-04-26 松下电器产业株式会社 半导体装置及其制造方法
US7135373B2 (en) * 2003-09-23 2006-11-14 Texas Instruments Incorporated Reduction of channel hot carrier effects in transistor devices
US6927137B2 (en) * 2003-12-01 2005-08-09 Texas Instruments Incorporated Forming a retrograde well in a transistor to enhance performance of the transistor
JP2005209836A (ja) * 2004-01-22 2005-08-04 Toshiba Corp 半導体装置の製造方法
WO2007045658A1 (en) * 2005-10-18 2007-04-26 Stmicroelectronics Crolles 2 Sas Selective removal of a silicon oxide layer
JP5283827B2 (ja) * 2006-03-30 2013-09-04 富士通セミコンダクター株式会社 半導体装置の製造方法
JP2006339670A (ja) * 2006-08-21 2006-12-14 Fujitsu Ltd 半導体装置及びその製造方法
US7629655B2 (en) * 2007-03-20 2009-12-08 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device with multiple silicide regions
KR101095679B1 (ko) * 2008-12-26 2011-12-19 주식회사 하이닉스반도체 Ｐｍｏｓ 트랜지스터의 제조방법
US8592264B2 (en) * 2011-12-21 2013-11-26 International Business Machines Corporation Source-drain extension formation in replacement metal gate transistor device
CN103151388B (zh) * 2013-03-05 2015-11-11 京东方科技集团股份有限公司 一种多晶硅薄膜晶体管及其制备方法、阵列基板

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5712548A (en) 1980-06-27 1982-01-22 Oki Electric Ind Co Ltd Manufacture of complementary type mos semiconductor device
US5153144A (en) * 1988-05-10 1992-10-06 Hitachi, Ltd. Method of making tunnel EEPROM
JPH04170067A (ja) 1990-11-01 1992-06-17 Nippon Sheet Glass Co Ltd Ｃｍｏｓトランジスタの製造方法
US5532176A (en) * 1992-04-17 1996-07-02 Nippondenso Co., Ltd. Process for fabricating a complementary MIS transistor
JPH0669231A (ja) 1992-08-12 1994-03-11 Yamaha Corp Ｍｏｓ型トランジスタの製法
US5405791A (en) * 1994-10-04 1995-04-11 Micron Semiconductor, Inc. Process for fabricating ULSI CMOS circuits using a single polysilicon gate layer and disposable spacers
JP3381110B2 (ja) 1995-01-20 2003-02-24 ソニー株式会社 半導体装置の製造方法
JPH08321557A (ja) 1995-05-24 1996-12-03 Nec Corp Ｃｍｏｓ半導体装置の製造方法
US6221709B1 (en) * 1997-06-30 2001-04-24 Stmicroelectronics, Inc. Method of fabricating a CMOS integrated circuit device with LDD N-channel transistor and non-LDD P-channel transistor
US6137144A (en) * 1998-04-08 2000-10-24 Texas Instruments Incorporated On-chip ESD protection in dual voltage CMOS
JP3293567B2 (ja) * 1998-09-30 2002-06-17 日本電気株式会社 半導体装置の製造方法
US6235568B1 (en) * 1999-01-22 2001-05-22 Intel Corporation Semiconductor device having deposited silicon regions and a method of fabrication

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