JP2002043631A - Method for manufacturing diode - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for manufacturing a diode in which production cost can be reduced by mass producing the diodes. SOLUTION: At first, a ceramic substrate is cut into a plurality of unit bodies by making cut grooves, a lower layer conductor is affixed to each unit body, resistors and crystal grains are stuck to the ceramic substrate which is then coated with a hermetic sealant and protrusions of crystal grains are exposed. Subsequently, an upper layer conductor is formed on the protrusions of crystal grains and concatenated with the peripheral edge of each unit body before being split into stripes utilizing crushable properties of the ceramic substrate. After a terminal is formed on the side face, the stripes are fired and shaped and then split into a plurality of unit bodies. Furthermore, a tin weldable metal is put on the surface of terminal and electric performance is tested prior to packaging. A diode thus produced is a single body and can be used as a resistor, a capacitor or a sensor and a plurality of diodes can be arranged in a variety of combinations, as required, to produce an assembly.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a method for manufacturing a diode.

[0002]

2. Description of the Related Art Conventional low-efficiency diodes which are sealed with glue on the surface thereof are mainly columnar (or tubular), and have a columnar diode encapsulation (MELF (METAL)).
ELECTRODE LEADLESS FACE):
Surface without metal electrode conductor).

[0003]

However, the above-mentioned conventional sealing method has the following disadvantages. (1) Manufacturing processes such as obtaining, leaving, attaching and welding mechanical parts are not easy, production efficiency is low, and mass production is difficult. (2) Especially in the sealing of columnar diodes, there is a problem of the coefficient of thermal expansion, that is, they do not match the coefficient of thermal expansion of the electric circuit board, and when welding the electric circuit board, the parts of the diode may be torn or the contact failure may occur. Or because of the product reliability is poor.

SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a method of manufacturing a diode capable of improving the drawbacks of the conventional diode manufacturing process, mass-producing the diode, and reducing the production cost.

[0005]

According to a method of manufacturing a diode of the present invention for solving the above-mentioned problems, as a means, a large number of vertical and horizontal kerfs are formed on a porcelain substrate to form hundreds of unit bodies. Then, a lower conductor is attached to each unit body of the porcelain substrate, and the printed resistor and the crystal grains of the diode are mounted on the porcelain substrate. Further, a sealing material is applied on the porcelain substrate and processed to expose projections at the top ends of the crystal grains. Next, an upper conductor is formed by printing or plating on the projections at the top ends of the crystal grains, and the upper conductor is connected to the periphery of each unit, and the porcelain substrate is formed into a striated body utilizing the property that it is easily broken. Folding, forming a terminal on the side surface, baking and forming, and using the property that it is easy to break again, the striated body is broken into a plurality of units by an automatic structure. Furthermore, a tin-weldable metal is attached to the surface of the terminal, and after testing the electrical performance, packaging is performed. By this method, a highly reliable and inexpensive diode can be manufactured.

The diode manufactured by the manufacturing method of the present invention is not a pillar but a single body, and can be used as a normal diode, a resistor, a capacitor, or a sensor. In addition to this, it is possible to form an assembly in which several diodes are aligned.

[0007]

Embodiments of the present invention will be described below with reference to the drawings. A method of manufacturing a porcelain substrate and a crystal grain fine diode according to an embodiment of the present invention includes a flow operation process shown in FIG. 1 and includes a total of 16 steps. In the first stage, as shown in FIGS. 2 and 3, a large number of V-shaped cut grooves 11 are provided in the porcelain substrate 1 to form several hundred units. This cut groove is formed to break and tear the substrate 1, and after breaking and tearing, a relatively large area of the side surface can be used as a conductor.

In the second stage, as shown in FIGS. 4 and 5, a lower conductor 2 is formed on the surface of each unit in the substrate 1 by a conductor cream by printing or steam plating.
In the third stage, as shown in FIGS. 6 and 7, a resistor 3 having an appropriate resistance value is provided between the lower conductors 2 of each unit of the substrate 1 by printing or plating.

In the fourth stage, as shown in FIGS. 8 and 9, the surface of the resistor 3 is covered with a protective material 4 to protect the resistor 3, and the following process of modification by irradiation with radium is convenient. I do. In the fifth step, as shown in FIGS. 10 and 11, if the resistance value of the printed resistor 3 has an error from a predetermined value, the resistance value 3 is cut off by irradiation with radium to form a cutout 31. Then, correct the resistance value.

In the sixth step, as shown in FIGS. 12 and 13, the conductive cream 51 and the bottom surface 52 of the crystal grains 5 (for example, a diode or a light emitting diode) are attached to the lower conductor 2. In the seventh step, as shown in FIGS. 14 and 15, a sealing material 53 is coated thereon to protect the crystal grains 5.

In the eighth stage, as shown in FIGS. 16 and 17, polishing, radium irradiation or chemical erosion is performed.
The top projection 54 of the crystal grain 5 is exposed. In the ninth stage,
As shown in FIGS. 18 and 19, a conductor is formed on the top end protrusion 54 of the crystal grain 5 by printing or steam plating, and is connected to the periphery of each unit to form the upper conductor 6.

In a tenth step, as shown in FIGS. 20 and 21, an insulating protective paste 7 is coated on each unit.
As an eleventh step, as shown in FIGS. 22 and 23,
The polarity and characters are displayed on the surface of the insulating paste by ink, black ink or radium irradiation engraving. As a twelfth step, as shown in FIG. 24 and FIG. 25, by utilizing the brittle nature of the substrate 1 and the cut grooves 11,
Tears.

In a thirteenth step, as shown in FIGS. 26 and 27, a terminal 8 is formed by attaching a conductive cream or a conductor to the side surface of the filament 12, and the terminal 8 is formed by baking.
In the fourteenth step, as shown in FIGS. 28 and 29, the ridges 12 are broken into unit diodes by an automatic structure using the fragile nature of the substrate 1 and the cut grooves 11.

As a fifteenth step, FIGS. 30 and 31
As shown in FIG. 7, a metal 81 capable of tin welding is attached to the terminal 8 to prevent oxidation of the terminal surface and facilitate welding. In the sixteenth step, the completed diode is tested for electrical performance and packaged if passed.

As shown in FIGS. 32 and 33, the bottom surface 52 of the crystal grain 5 is accurately attached to the lower conductor 2 by using the horizontally movable vibrating plate 9 in the sixth stage. The vibrating plate 9 is provided with a stepped hole 91 having a large upper part and a small lower part.
Of the crystal body 5 is fitted above the stepped hole 91, and the top is turned upside down. As a result, the projection 5
The crystal grains 5 having the downward direction 4 are moved faster than the crystal grains 5 having the bottom surface 52 facing downward.
1, the bottom surface 52 of the crystal grain 5 is directed upward, so that the bottom surface 52 of the crystal grain 5 can be accurately mounted on the lower conductor 2. Because, the crystal grains 5 having the protrusions 54
It is composed of the semiconductor of the main body and a kind of metal material forming the projection 54, and the rectangular body of the main body and the semicircular point of the projection 54 are combined in appearance. By utilizing the difference in physical properties due to the material and appearance size, and the appropriate energy transmitted by the vibration plate, the physical properties are different, so that the crystallinity 54 is arranged downward and simultaneously the crystal grains 5 are moved forward,
When placed in a vibrating plate, the crystal grains 5 in the vibrating plate are all arranged in the same direction, and a large number of crystal grains 5 are die-mounted (Di
e Mounted: the name of the crystalline adhesive).

Next, as shown in FIG. 34, the process of the sixth stage may be changed to the following process in order to achieve the purpose of making the product lighter, thinner and smaller. That is, the conductor 32 is provided on the lower conductor 2 and the protective material 4, and the printed crystal grains 5 are placed on the conductor 32. Further, as shown in FIG.
If the resistor 3 does not need to be used, the steps of the third, fourth and fifth steps are omitted, and a single crystal grain 5 is formed.

FIG. 36 shows a state in which the crystal grains 5 are aligned (array (ARRAY)). The above-described third, fourth and fifth steps are omitted.
And several units of crystal grains 5 are aligned. A groove 14 is formed in the substrate 1 in advance, so that it is convenient to form the terminal 8 on the side surface of the thirteenth stage. Further, the unit crystal grains 5 can be used as a resistor, a capacitor, or a sensor in addition to a diode. If necessary, various types of crystal grains can be combined and arranged to form several aligned crystal grain sets.

[0018]

The present invention has the following effects. (1) Currently, it is the only manufacturing method of the strip diode that can be mass-produced. (2) The production efficiency is extremely high, and it is possible to produce about 200,000 pieces per hour with only one machine, and to produce products with very low cost. (3) The structure of the present invention and its manufacturing method have breakthrough properties,
Competitive.

(4) The product to be produced has high reliability, and a conductive material is adhered to the contacts of the crystal grains of the diode, which is not the glass tube (the surface without metal electrode conductor (MELF)) used in the conventional diode. It is a contact type contact. (5) The crystal grains are taken directly from the crystal disk with an automatic machine stand and placed on the substrate, or all the crystal grains are aligned on the substrate at once using a vibration plate.

(6) A single package contains many grains and forms an ordered grain assembly, which can be used as a diode, resistor, capacitor or sensor, convenience and efficiency of use And increase the value of the product. (7) Packaged fixed crystal grains and resistors can be produced in the same manufacturing process.

[Brief description of the drawings]

FIG. 1 is a process diagram of a method for manufacturing a diode according to an embodiment of the present invention.

FIG. 2 is a side view showing a porcelain substrate having a cut groove according to an embodiment of the present invention.

FIG. 3 is a perspective view showing a porcelain substrate having a cut groove according to an embodiment of the present invention;

FIG. 4 is a sectional view showing a state in which a lower conductor is formed on a porcelain substrate according to an embodiment of the present invention.

FIG. 5 is a top view showing a state in which a lower conductor is formed on a porcelain substrate according to an embodiment of the present invention.

FIG. 6 is a cross-sectional view showing a state where a resistor is formed between lower conductors according to an embodiment of the present invention.

FIG. 7 is a top view illustrating a state in which a resistor is formed between lower conductors according to an embodiment of the present invention.

FIG. 8 is a sectional view showing a state in which a protective material is formed on a resistor according to an embodiment of the present invention.

FIG. 9 is a top view showing a state in which a protective material is formed on a resistor according to an embodiment of the present invention.

FIG. 10 is a cross-sectional view illustrating a state in which a cutout is formed and a resistance value is corrected according to an embodiment of the present invention.

FIG. 11 is a top view showing a state in which a notch is formed and a resistance value is corrected according to an embodiment of the present invention.

FIG. 12 is a cross-sectional view showing a state in which crystal grains according to one embodiment of the present invention are adhered to a conductive cream.

FIG. 13 is a top view showing a state in which crystal grains according to one embodiment of the present invention are adhered to a conductive cream.

FIG. 14 is a cross-sectional view showing a state in which crystal grains according to an embodiment of the present invention are covered with a sealing material.

FIG. 15 is a top view showing a state where crystal grains are covered with a sealing material according to an embodiment of the present invention.

FIG. 16 is a cross-sectional view illustrating a state where a protrusion is exposed according to an embodiment of the present invention.

FIG. 17 is a top view showing a state where a protrusion is exposed according to an embodiment of the present invention.

FIG. 18 is a cross-sectional view showing a state in which an upper conductor is formed from a protrusion of a diode to an edge of each unit according to an embodiment of the present invention.

FIG. 19 is a top view showing a state in which an upper conductor is formed from a protrusion of a diode to an edge of each unit according to an embodiment of the present invention.

FIG. 20 is a cross-sectional view showing a state where the upper surface is covered with an insulating protection paste according to one embodiment of the present invention.

FIG. 21 is a top view showing a state where the upper surface is covered with an insulating protection paste according to one embodiment of the present invention.

FIG. 22 is a cross-sectional view illustrating a state in which polarity and characters are displayed according to an embodiment of the present invention.

FIG. 23 is a top view showing a state in which polarities and characters are displayed according to an embodiment of the present invention.

FIG. 24 is a perspective view showing a strip according to an embodiment of the present invention.

FIG. 25 is a top view showing a strip according to an embodiment of the present invention.

FIG. 26 is a cross-sectional view showing a state in which a terminal is formed on a slab according to an embodiment of the present invention.

FIG. 27 is a top view showing a state in which a terminal is formed in a striated body according to an embodiment of the present invention.

FIG. 28 is a perspective view showing a diode according to an embodiment of the present invention.

FIG. 29 is a top view illustrating a diode according to an embodiment of the present invention.

FIG. 30 is a cross-sectional view showing a state where a tin-weldable metal is adhered to the surface of the terminal according to an embodiment of the present invention.

FIG. 31 is a top view showing a state in which a tin-weldable metal is adhered to the surface of the terminal according to an embodiment of the present invention.

FIG. 32 is a perspective view showing a diaphragm according to an embodiment of the present invention.

FIG. 33 is a perspective view showing an operating state of the diaphragm according to one embodiment of the present invention.

FIG. 34 is a sectional view showing a diode according to another embodiment of the present invention.

FIG. 35 is a sectional view showing a diode according to another embodiment of the present invention.

FIG. 36 is a side view showing a component in which a plurality of diodes are arranged according to another embodiment of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Porcelain board 2 Lower conductor 5 Crystal grain 6 Upper conductor 7 Insulating protection paste 8 Terminal 11 Cut groove 12 Stripe 13 Unit body 51 Conductive cream 53 Sealing material 54 Projection 71 Polarity or character

Claims (21)

[Claims] 1. A step of forming a plurality of kerfs on the upper surface of a porcelain substrate having fragile properties in a vertical and horizontal direction, and dividing the porcelain substrate into a plurality of unit bodies; Forming a lower conductor, bonding a bottom surface of a crystal grain with a conductive cream on the lower conductor, covering a top surface of the porcelain substrate on which the crystal grain is bonded with a sealing material, Exposing a projection at the top end of the grain; forming an upper conductor so as to be connected to the projection of the crystal grain and connected to an outer peripheral edge of each unit body of the porcelain substrate; insulating the upper surface of the upper conductor Covering with a protective glue, displaying a polarity or a character on the surface of the insulating protective glue, utilizing the brittle nature and the cut grooves of the porcelain substrate, and breaking the porcelain substrate to form a plurality of grooves. Forming a body; Forming a terminal on a side surface of the ridge, and using a brittle property of the porcelain substrate and the kerf to break the ridge to form a single-grain diode. A method of manufacturing a diode. 2. The method according to claim 1, wherein the crystal grains are light emitting diodes. 3. The method according to claim 1, wherein the kerf is formed in a V-shape. 4. The method according to claim 1, wherein the lower conductor is formed by printing a conductor cream. 5. The method according to claim 1, wherein the lower conductor is formed by steam plating. 6. A step of disposing a resistor having a predetermined resistance value between the lower conductors in each unit of the porcelain substrate after the step of forming the lower layer conductor, and protecting a surface of the resistor with a protective material. 2. The method according to claim 1, further comprising the step of coating. 7. The method according to claim 6, wherein the resistor is formed by printing. 8. The method according to claim 6, wherein the resistor is formed by steam plating. 9. The method for manufacturing a diode according to claim 6, wherein a cutout is formed in the resistor by irradiation of radium to correct the resistance value. 10. The step of attaching a bottom surface of a crystal grain to the lower conductor, wherein the crystal grain is vibrated at a predetermined vibration rate using a horizontally movable vibration plate having holes so that the projections face downward. Is moved faster than the crystal grains whose bottom faces downward, the bottom faces of the crystal grains fitted in the holes face upward, and the bottom faces of the crystal grains are accurately attached to the lower conductor. The method for manufacturing a diode according to claim 1. 11. The hole of the vibrating plate is a stepped hole having a large upper portion and a small lower portion, wherein the projections of the crystal grains are fitted in the lower portions of the holes, and the main body of the crystal grains is provided in the upper portions of the holes. 11. The method of manufacturing a diode according to claim 10, wherein the crystal grains are mounted in an inverted state. 12. In order to manufacture said diode light and thin and small, a conductor is printed on said lower conductor and said protective material instead of attaching a bottom surface of crystal grains to said lower conductor with conductive cream. 7. The method according to claim 6, further comprising the step of disposing the crystal grains on the conductor. 13. The method according to claim 1, wherein in the step of exposing the projections of the crystal grains, any one of polishing, radium irradiation, and chemical erosion is adopted. 14. The step of coating with the sealing material,
2. The method according to claim 1, wherein the projections of the crystal grains are not covered with the sealing material, the projections are naturally exposed, and the step of exposing the projections of the crystal grains is omitted. 15. The method according to claim 1, wherein the upper layer conductor is formed so as to be connected to the projection of the crystal grain by printing or steam plating. 16. The method of manufacturing a diode according to claim 1, wherein in the step of displaying a polarity or a character on the surface of the insulating protection paste, a method of engraving with ink or radium is adopted. 17. The diode according to claim 1, wherein, in the step of forming the terminal, a conductive cream or a conductor is applied to a side surface of the filament, and the terminal is formed by baking and molding. Method. 18. The diode according to claim 1, wherein the filament is cleaved so as to form a plurality of the unit bodies and forms a plurality of the crystal grains. Manufacturing method. 19. The crystal grains of the unit body can be used as any one of a diode, a resistor, a capacitor, and a sensor, and if necessary, a single grain in which a plurality of the crystal grains are aligned in various combinations. The method for manufacturing a diode according to claim 18, wherein the diode is formed. 20. The method according to claim 1, further comprising, after the step of forming the diode by breaking the filament, attaching a tin-weldable metal to the surface of the terminal. . 21. The method of claim 20, further comprising, after the step of attaching the metal to the terminal, performing an electrical performance test on the diode to which the metal is attached and packaging the diode.
A method for producing the diode according to the above.