JP2002043482A - Member for electronic circuit, its manufacturing method and electronic component - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve thermal reliability by remarkably shortening a manufacturing process and effectively reducing a manufacturing cost. SOLUTION: A member for an electronic circuit 12A has a thermal conduction layer 22 on a heat sink material 20. The thermal conduction layer 22 is composed of an insulation board 24, a first joining material 26 including an active element for joining the insulation board 24 on the heat sink material 20, a second joining material 28 formed on the insulation board 24, and an electrode 30 formed on the second joining material 28. An AlN layer or Si3N4 layer is used as the insulation board 24, a hard brazing material containing the active element is used as the first and second joining materials 26, 28, and an SiC composite material and a C/Cu composite material are used as the heat sink material 20.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electronic circuit member used for cooling an electronic circuit chip composed of a semiconductor or the like, a method of manufacturing the same, and an electronic component.

[0002]

2. Description of the Related Art Generally, heat is a major enemy of a semiconductor device, and it is necessary to keep the internal temperature from exceeding a maximum allowable junction temperature. Further, in a semiconductor device such as a power transistor or a semiconductor rectifier, power consumption per operation area is large. Therefore, heat generated from a semiconductor device case (package) or a lead alone cannot completely release generated heat. The internal temperature may rise to cause thermal destruction.

[0003] This phenomenon is the same in a semiconductor device equipped with a CPU. The amount of heat generated during operation increases with an increase in clock frequency, and thermal design taking heat dissipation into consideration is becoming an important matter. .

In the thermal design in consideration of the above-described prevention of thermal destruction, element design and mounting design are performed in consideration of fixing a heat sink having a large heat radiation area to a case (package) of a semiconductor device.

As a material for the heat sink, generally, a metal material such as copper or aluminum having good thermal conductivity is used.

[0006]

In recent years, in semiconductor devices such as CPUs and memories, low-power driving for low power consumption has been attempted, but high integration of elements and enlargement of element formation areas have been attempted. Accordingly, the size of the semiconductor device itself tends to increase. As the size of a semiconductor device increases, a semiconductor substrate (a semiconductor element such as silicon or GaAs and AlN or Si ₃ N ₄
The stress caused by the difference in thermal expansion between the heat sink and the heat sink increases, and there is a possibility that a peeling phenomenon of the semiconductor device, a mechanical destruction, a malfunction of the semiconductor element, or the like may occur.

In order to prevent this, it is necessary to realize low-power driving of the semiconductor device and to improve a heat sink material.
For low-power driving of a semiconductor device, a TTL level (5 V) which has been conventionally used as a power supply voltage has been removed.
A level of 3.3 V or less has been put to practical use.

On the other hand, as a constituent material of the heat sink,
In addition to simply considering thermal conductivity, it is necessary to select a material having a thermal expansion coefficient substantially equal to that of silicon or GaAs, which is a semiconductor substrate, and having high thermal conductivity.

There are various reports on the improvement of the heat sink material, for example, an example using aluminum nitride (AlN) and an example using Cu (copper) -W (tungsten). Cu-W is a composite material having both low thermal expansion of W and high thermal conductivity of Cu.

[0010] Another example is a ceramic base material containing SiC as a main component and containing metallic Cu at a ratio of 20 to 40% by volume (conventional example 1: JP-A-8-279569).
And a powder sintered porous body made of an inorganic substance impregnated with 5 to 30 wt% of Cu (conventional example 2: see JP-A-59-228742). However, these heat sink materials have properties,
It is hard to say that the market requirements are always satisfied in terms of balance between workability and price.

Here, a conventional electronic component 1 which has been subjected to heat countermeasures
00 will be described with reference to FIG. This electronic component 1
Reference numeral 00 denotes a configuration in which an IC chip 108 is mounted on a heat sink material 102 via a heat conductive layer 104 and a base layer 106. The heat conductive layer 104 is formed of the heat sink material 10.
2, a lower electrode layer 112 of Cu or Al, and an insulating layer (A) on the Ni plating layer 110 formed so as to cover
1N layer) 114 and upper electrode layer 11 of Cu or Al
6 are joined to each other.
The Ni plating layer 110 and the laminate 118 are joined by the solder layer 120. In this case, the laminate 11
8 and the solder layer 120, in order to improve the wettability of the lower electrode layer 112 to the solder layer 120, the Ni layer 1
22 is interposed.

An IC chip 108 is mounted on the laminate 118 via a solder layer 124. Also in this case, the upper electrode layer 116 is provided between the laminate 118 and the solder layer 124.
Ni to improve the wettability of the
IC chip 108 and solder layer 124 with layer 126 interposed
In order to improve the wettability of the IC chip 108 with respect to the solder layer 124, a Ni layer 128 is interposed therebetween.

An electronic component 200 according to another conventional example.
(See, for example, JP-A-11-307696), as shown in FIG. 16, a metal base plate 202 for radiating heat generated in a semiconductor chip and a metal base plate 202 for insulating the semiconductor chip 204 from the metal base plate 202. Ceramic plate 2
06, an upper electrode 210 provided on the upper surface of the ceramic plate 206 via a brazing material 208, and a ceramic plate 20.
6 provided on the lower surface of the lower electrode 6 via a brazing material 212.
14, a metal spacer 216 for increasing the distance between the metal base plate 202 and the ceramic plate 206, a brazing material 218 for fixing the metal spacer 216 to the metal base plate 202, and the semiconductor chip 204 on the upper electrode 210. It has a solder layer 220 for fixing and a solder layer 222 for fixing the lower electrode 214 on the metal spacer 216.

However, in the conventional electronic component 100 shown in FIG.
a first step of forming the i-plated layer 110, a second step of forming the Ni layer 128 on the lower surface of the IC chip 108,
Upper electrode layer 1 made of Al on both surfaces of insulating layer 114
Third and fourth steps of forming the stacked body 118 by forming the lower electrode layer 112 and the lower electrode layer 112, and forming the Ni layers 126 and 122 on the end face of the upper electrode layer 116 and the end face of the lower electrode layer 112, respectively. And the sixth step, and the laminate 11
7 joining the Ni. 8 to the Ni plating layer 110 of the heat sink material 102 via the solder layer 120;
At least eight steps of an eighth step of bonding the IC chip 108 on the substrate 8 via the solder layer 124 are required, and there is a problem that the manufacturing process is complicated. This results in increased costs in the final product.

Further, since the number of members to be laminated is large, it is conceivable to reduce the thickness of the solder layer 120 (for example, several hundred μm) in consideration of miniaturization. However, the heat radiation of the solder layer 120 itself is poor. Since there are many joining interfaces (joining interfaces made of different materials) that hinder heat dissipation, the IC chip 10
8 may not be able to efficiently guide the heat generated from the heat sink 8 to the heat sink material 102.

Further, since the bonding is performed by the solder layer 120, there is a possibility that the durability characteristics may be degraded when subjected to a thermal cycle or thermal shock. That is, when subjected to a thermal cycle or thermal shock, warpage of the insulating substrate, peeling of the electrode, cracking of the insulating substrate, cracking of the soldered portion, etc. occur, resulting in malfunction of the semiconductor element. It will be. This is the same in the electronic component 200 according to another conventional example shown in FIG.

The present invention has been made in view of such problems, and can greatly reduce the number of manufacturing steps.
An object of the present invention is to provide an electronic circuit member, a method of manufacturing the same, and an electronic component that can effectively reduce the manufacturing cost and improve the thermal reliability.

[0018]

In the electronic circuit member according to the present invention, a bonding material containing an active element is interposed between a layer functioning as an insulating substrate (hereinafter, for convenience, an insulating substrate) and a heat sink material. It is characterized by having.

Thus, the insulating metal and the joining material are firmly joined by the active metal contained in the joining material, and the heat sink material and the joining material are firmly joined. As a result, the insulating substrate and the heat sink material are joined together. Are firmly joined.

Further, in the electronic circuit member according to the present invention, an intermediate layer is interposed between a layer functioning as an insulating substrate and a heat sink material, and between the layer functioning as the insulating substrate and the intermediate layer; A bonding material containing an active element is interposed between the intermediate layer and the heat sink material.

Thus, the insulating substrate and the intermediate layer are firmly joined by the active metal contained in the joining material, and the intermediate layer and the heat sink material are firmly joined. As a result, the insulating substrate and the heat sink material are joined together. Are firmly joined.

Furthermore, the presence of the intermediate layer makes it possible to reduce the difference in thermal expansion between the insulating substrate and the heat sink at the time of thermal shock, and to improve the bonding of the electronic circuit member as a whole. That is, the thermal shock resistance of the electronic circuit member can be improved by the intermediate layer.

In the present invention, the coefficient of thermal expansion of the layer functioning as the insulating substrate, the bonding material, the heat sink material, and the intermediate layer is 3.0 × 10 ^{−6 to} 1.0 × 10 ⁻⁵ / K.
It is preferable that In addition, the intermediate layer is formed in a range of 3 × 10 ^{−6 to} 1.0 × 1 so as to reduce stress generated at the time of thermal shock.
It is preferable that the material has a coefficient of thermal expansion of 0 ^-5 / K, or a material having a low Young's modulus and a low proof stress so that stress generated by the thermal expansion is reduced. For this reason, for example, aluminum, silver, copper, or an alloy thereof can be used as the intermediate layer.

Thus, for example, an IC chip is mounted on this electronic circuit member to form an electronic component, and even if the temperature of the IC chip rises with the use of the electronic component, even if the temperature of the IC chip increases, the heat sink material and the insulating substrate are separated. Does not occur.

In particular, it is preferable to use a hard brazing material containing an active element as the bonding material. In this case, the average thickness of the joining material after joining is 50 μm or less, preferably 10 μm.
m, more preferably 5 μm or less. This thickness can be controlled by pressing. As compared with the case where a solder layer is used, the heat dissipation from the IC chip is efficiently transmitted to the heat sink material because the heat dissipation is excellent, and the thermal design for the electronic component can be easily performed. Further, even when the insulating substrate is exposed to a thermal cycle, a thermal shock, or the like, no crack or the like occurs on the insulating substrate, and the thermal reliability can be improved.

That is, when soldering is used, when subjected to a thermal cycle or thermal shock, it warps the insulating substrate,
: Delamination of electrodes,: Cracks on insulating substrate,: Cracks on soldered portions, etc., resulting in malfunction of the semiconductor element. In the present invention, the above series of problems does not occur and high reliability is obtained. An electronic circuit member and an electronic component can be provided.

As the active element, the periodic table 2A
At least one of the elements belonging to Group 3, Group 3A, Group 4A, Group 5A, or Group 4B can be used.

As the heat sink material, SiC, A
1N, Si ₃ N ₄ , BeO, Al ₂ O ₃ , Be ₂ C, C, C
u, Cu alloy, Al, Al alloy, Ag, Ag alloy, Si
A material having at least one selected from the group consisting of as a constituent material can be used.

In particular, as the heat sink material, SiC
A low coefficient of thermal expansion is obtained by using a composite material in which a base material is impregnated with Cu or Cu alloy or a composite material in which a C (carbon) base material is impregnated with Cu or Cu alloy. , Can achieve high thermal conductivity,
The thermal expansion coefficient mismatch with the insulating substrate is greatly reduced, making it possible to almost match, thereby suppressing the generation of residual stress on the insulating substrate during bonding and enabling bonding processing in a large area. Becomes

As the layer functioning as the insulating substrate,
An AlN layer or a Si ₃ N ₄ layer can be used. As a result, an insulating substrate having substantially the same coefficient of thermal expansion as the IC chip and having high thermal conductivity can be formed.

It is preferable that a surface of the heat sink material to which the cooling fins are attached has a convex shape toward the outside. However, since grease is used between the heat sink material and the cooling fan, it is needless to say that a normally flat shape can be used.

When the surface on which the cooling fins are attached is made convex outward, the amount of protrusion of the convex shape of the heat sink material is 1/200 to 1/20000 with respect to the maximum length of the heat sink material. It is preferred that Thereby, when the cooling fin is fixed to the heat sink material by, for example, screwing, the fixing work between the heat sink material and the cooling fin is facilitated, and the adhesion between these members can be increased, and the heat radiation property is enhanced. be able to.

Next, a method for manufacturing an electronic circuit member according to the present invention is characterized in that a heat sink material, a layer functioning as an insulating substrate, and an electrode are simultaneously bonded. As a result, the number of manufacturing steps can be significantly reduced, the manufacturing cost can be effectively reduced, and the thermal reliability can be improved.

The method may further include a step of bonding a layer functioning as an insulating substrate on the heat sink material via a bonding material containing an active element, or an active layer may be provided between the layer functioning as an insulating substrate and the intermediate layer. The method may include a step of joining these members by interposing a first joining material containing an element and interposing a second joining material containing an active element between the intermediate layer and the heat sink material.

In the bonding step, pressure may be applied at the time of bonding the heat sink material and the layer. It is preferable that the pressure is 0.2 MPa or more and 10 MPa or less. This is because bonding of the layer functioning as an insulating substrate to the heat sink material, bonding of the layer functioning as the insulating substrate to the intermediate layer, and bonding of the intermediate layer to the heat sink material are strengthened.

As the layer functioning as the insulating substrate, the bonding material, the heat sink material and the intermediate layer, those having a coefficient of thermal expansion of 3.0 × 10 ^{−6 to} 1.0 × 10 ⁻⁵ / K are used. Is preferred. In addition, the intermediate layer is formed in a range of 3 × 10 ^{−6 to} 1.0 × 1 so as to reduce stress generated at the time of thermal shock.
It is preferable that the material has a coefficient of thermal expansion of 0 ^-5 / K, or a material having a low Young's modulus and a low proof stress so that stress generated by the thermal expansion is reduced. For this reason, for example, aluminum, silver, copper, or an alloy thereof can be used as the intermediate layer.

It is preferable to use a hard brazing material containing an active element as the bonding material. In this case, the thickness of the brazing material can be controlled by the pressurization, and a good bonded body having excellent heat dissipation can be obtained as compared with a conventional solder layer having a thickness of several hundred μm.

As the active element, it is preferable to use at least one of the elements belonging to any of Groups 2A, 3A, 4A, 5A and 4B of the periodic table.

Further, as the heat sink material, Si
C, AlN, Si_ThreeN_Four, BeO, Al _TwoO_Three, Be_TwoC,
C, Cu, Cu alloy, Al, Al alloy, Ag, Ag alloy
At least one selected from the group consisting of gold and Si
It is preferable to use a material that is a constituent material.

In particular, as the heat sink material, SiC
It is preferable to use a composite material in which a base material is impregnated with Cu or a Cu alloy, or a composite material in which a C base material is impregnated with Cu or a Cu alloy. Further, as a layer functioning as the insulating substrate, A
It is preferable to use an 1N layer or a Si ₃ N ₄ layer.

Next, in the electronic component according to the present invention, in which an electronic circuit chip is mounted on a heat sink material via a heat conductive layer and an underlayer, the heat conductive layer functions at least as an insulating substrate. A bonding material containing an active element is interposed between the layer and the heat sink material.

Further, in the heat conductive layer, a first bonding material containing an active element is interposed between at least a layer functioning as an insulating substrate and an intermediate layer, and an active material is provided between the intermediate layer and the heat sink material. A second bonding material containing an element may be interposed.

In these cases, the heat conductive layer may form an electrode on the layer functioning as the insulating substrate via another bonding material containing an active element.

[0044]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of an electronic circuit member, a method of manufacturing the same, and an electronic component according to the present invention will be described below with reference to FIGS.

First, the electronic component 1 according to the first embodiment
1A, the IC chip 1 is provided on the electronic circuit member 12A according to the first embodiment via the base layer 14, as shown in FIG.
6 are mounted, and cooling fins 18 are fixed to the lower surface of the electronic circuit member 12A.

The electronic circuit member 12A according to the first embodiment is provided with a heat sink material 2 as shown in FIG.
On the other hand, the heat conductive layer 22 is formed on the heat conductive layer 22.

The heat conductive layer 22 has a first bonding material 26 containing an active element interposed between at least a layer functioning as an insulating substrate (hereinafter referred to as an insulating substrate 24 for convenience) and the heat sink material 20. It is configured.

In the first embodiment, the heat conductive layer 22 includes the first bonding material 26 and the insulating substrate 24, the second bonding material 28 formed on the insulating substrate 24, And an electrode 30 made of Cu or Al formed on the second bonding material 28.

Here, the insulating substrate 24 is made of an AlN layer or S
i ₃ N ₄ layer can be used. A as the insulating substrate 24
When an 1N layer is used, the coefficient of thermal expansion of the AlN layer changes depending on the molar composition ratio of Al and N, but is approximately 3.0 × 1.
It is in the range of 0 ^{-6 to} 1.0 × 10 ^-5 / K. Therefore, the coefficient of thermal expansion of the heat sink material 20 is 3.0 × 10 ⁻⁶ to 1.
It is preferably 0 × 10 ⁻⁵ / K. For example, the thermal expansion coefficient of the insulating substrate (AlN layer) 24 is 3.0 × 10 ⁻⁶ / K, and the thermal expansion coefficient of the heat sink material 20 is 1.0 × 1.
If the electronic component 10A has a thermal expansion coefficient of more than 0 ⁻⁵ / K, the heat sink material 20 and the insulating substrate 24 may be separated from each other when the temperature of the electronic component 10A rises with the use of the electronic component 10A. This is because there is a possibility that they may be separated from each other.

The molar composition ratio of Al and N in the insulating substrate 24 is preferably Al: N = 0.8: 1.2 to 1.2: 0.8. In this case, the insulating substrate 24 reliably has a coefficient of thermal expansion of 3.0 × 10 ^{−6 to} 1.0 × 10 ⁻⁵ / K and 1
The reason therefor is to exhibit a thermal conductivity of 50 W / mK or more.

The heat conductivity of the heat sink material 20 is as follows:
It is preferably at least 150 W / mK. 150W /
If the temperature is less than mK, the speed at which the heat generated by the IC chip 16 is transmitted to the outside of the electronic component 10A with the use of the electronic component 10A becomes slow.
This is because the effect of keeping the temperature of A constant is poor.

The constituent material of the heat sink material 20 is not particularly limited as long as the thermal conductivity and the coefficient of thermal expansion are within the above-mentioned ranges, but SiC, AlN, Si ₃ N ₄ , B
eO, Al ₂ O ₃ , Be ₂ C, C, Cu, Cu alloy, A
Preferred examples include at least one selected from the group consisting of 1, Al alloy, Ag, Ag alloy, and Si. That is, the heat sink material 20 can be composed of a single material selected from these materials or a composite material composed of two or more materials. Examples of the composite material include a SiC / Cu composite material 20A (see FIG. 3) and a C / Cu composite material 20B (see FIG. 4).

As shown in FIG. 3, the SiC / Cu composite material 20A impregnates the molten Cu or Cu alloy 44 into the open pores 42 of the porous sintered body 40 made of SiC, Alternatively, it is obtained by solidifying the Cu alloy 44.

As shown in FIG. 4, the C / Cu composite material 20B is formed by preliminarily firing carbon or its allotrope to form a network, and to form Cu or molten molten metal in the open pores 52 of the porous sintered body 50. It is obtained by impregnating the Cu alloy 54 and then solidifying the Cu or the Cu alloy 54. For example, Japanese Patent Application No. 2000-8083
3 is a member shown in FIG.

When the heat sink material 20 is made of the above-described composite material or alloy, the coefficient of thermal expansion and the coefficient of thermal conductivity can be set within the above range (coefficient of thermal expansion 3.0 × 10 3) by setting the composition ratio of the constituent components. ^{−6 to} 1.0 × 10 ⁻⁵ / K: Thermal conductivity:
150 W / mK or more).

The first and second joining materials 26 and 28 are preferably hard brazing materials containing an active element. In this case, the active element is a group 2A group of the periodic table such as Mg, Sr, Ca, Ba, Be, a group 3A such as Ce, a group 4A such as Ti or Zr, or a group 5A such as Nb, 4B of B, Si, etc.
At least one of the elements belonging to the group can be used. In the first embodiment, an Ag-Cu-Ti hard brazing material or an Ag-Cu-In-Ti hard brazing material is used as the first and second joining materials 26 and 28. In this case, the active element is Ti.

On the other hand, as shown in FIG.
It has a solder layer 60 formed on the heat conductive layer 22 and a Ni layer 62 for improving the wettability of the IC chip 16 with respect to the solder layer 60.

When the electronic circuit member 12A according to the first embodiment is used, the cooling fins 18 made of, for example, Al or Cu are provided on the lower surface of the heat sink material 20.
Are fixed by, for example, screwing (not shown). In particular, in the first embodiment, as shown in FIG. 2, the surface (lower surface) 20a of the heat sink material 20 to which the cooling fins 18 are attached has a convex shape outward.

Specifically, as described later, the heat conductive layer 2
At the stage where 2 is formed, the heat shrinkage of the electrode 30 progresses by performing the heat treatment, whereby the lower surface 20a of the heat sink material 20 on which the heat conductive layer 22 is formed is warped so as to be convex outward. As a result, the lower surface 2 of the heat sink material 20
0a becomes convex toward the outside. In this case, the warp amount is 1/200 to the maximum length of the heat sink material 20.
It is preferably 1/20000. If it is outside this range, the tightness of the fastening of the cooling fins 18 deteriorates,
This is because problems occur in terms of heat dissipation, and problems such as breakage of members occur.

Next, a method of manufacturing the electronic circuit member 12A and the electronic component 10A according to the first embodiment will be described with reference to FIG.
This will be described with reference to FIG.

In the manufacturing method according to the first embodiment, first, in a setting step shown in FIG. 5A, a first bonding material 26, an insulating substrate 24, a second bonding material 28 and an electrode They are placed (set) in the order of 30. This setting is performed, for example, in the atmosphere.

Next, in the bonding step shown in FIG. 5B, the first bonding material 26, the insulating substrate 24, and the second bonding material 28
And heat sink material 20 on which electrodes 30 are set
Is fixed on a jig 70, for example, 1.0 × 10 ⁻⁵ Torr
While applying pressure from above in the following vacuum,
Join by cooling down. By this bonding process, as shown in FIG. 2, a bonded body in which the electrode 30, the insulating substrate 24 and the heat sink material 20 are integrated, that is, the electronic circuit member 1
2A is obtained.

The pressure in the joining step is preferably 0.2 MPa or more and 10 MPa or less. In this case, the average thickness of the first and second bonding materials 26 and 28 after bonding is 50 μm or less, preferably 10 μm or less,
More preferably, it is 5 μm or less. This thickness can be controlled by the pressure.

Due to the difference in coefficient of thermal expansion, the heat shrinkage of the upper electrode 30 progresses more than the other constituent films due to the difference in the coefficient of thermal expansion due to the temperature rise / fall processing performed at the time of the above-mentioned bonding. (The heat conductive layer 22 and the heat sink material 20) are warped so that the lower surface 20 a side of the heat sink material 20 is convex. This warpage is caused by heat sink material 20
This is remarkable when the C / Cu composite material 20A or the C / Cu composite material 20B is used. As described above, the amount of warpage is 1/200 to 1/200 with respect to the maximum length of the heat sink material 20.
00.

The heat sink material 20 is made of pure Cu.
When a Cu alloy is used, the lower surface 20a of the heat sink material 20 is warped so as to be concave, contrary to the above. In this case, it becomes difficult to attach the cooling fins 18 as shown in FIG.
Processing (post-processing) for flattening the lower surface 20a of the semiconductor device is required, which causes an increase in the number of manufacturing steps. Therefore, as described above, the heat sink material 20 includes the SiC / Cu composite material 20A and the C / Cu composite material 20A.
It is preferable to use B.

The electronic circuit member 1 according to the first embodiment
After 2A is manufactured, a normal process is performed. That is,
First, a circuit pattern is formed on the surface of the electrode 30. More specifically, a circuit-forming resist is printed on the entire surface of the electrode 30, and only a portion which is not etched with respect to the resist is selectively cured. Then, the uncured portion is removed, and the exposed copper is replaced with cupric chloride. The circuit pattern is formed on the surface of the electrode 30 by etching with an aqueous solution.

Thereafter, in order to remove the brazing material between the circuits, the substrate was washed with an aqueous solution of ammonium ammonium fluoride and further washed with water several times. Then, Ni-P is used as a protective layer on the surface of the metal part.
Plating was performed to form a circuit pattern with a protective layer.

Next, an IC is formed on the circuit pattern of the electrode 30.
The chip 16 was joined. In the first embodiment, a commercially available silicon-based IGBT (power semiconductor element) is joined by low-temperature solder. Further, although not shown, a metal wire was electrically connected to a terminal of the IC chip 16 by wire bonding, and a metal wire was similarly connected to a circuit pattern of the electrode 30.

Thereafter, the electronic circuit member 12A to which the IC chip 16 is bonded is housed in a package, and a commercially available silicone gel for potting is injected into the package and cured, and the electronic circuit member 12A is cured. The electronic component 10A according to the first embodiment, in this case, a power semiconductor device, was fabricated by increasing the electrical insulation of the device 12A and sealing it to ensure mechanical reliability.

As described above, the electronic circuit member 12A, the method of manufacturing the same, and the electronic component 10A according to the first embodiment.
In the above, since the insulating substrate 24 and the heat sink material 20 are joined by the first joining material 26 containing the active element, the active substrate contained in the first joining material 26 allows the insulating substrate 24 and the first heat sink material 20 to be joined to each other. The joining material 26 is firmly joined, and the heat sink material 20 and the first joining material 26 are firmly joined. As a result, the insulating substrate 24 and the heat sink material 2 are joined.
0 is firmly joined.

Accordingly, the heat sink material 20 and the insulating substrate 2
4, there is no need to intervene a Ni plating layer, a solder layer, a Ni layer, and a lower electrode layer, and only the first bonding material 26 described above is sufficient. Therefore, in the present embodiment, the number of manufacturing steps can be significantly reduced, and the manufacturing cost can be effectively reduced.

In the first embodiment, the insulating substrate 24, the first bonding material 26, and the heat sink material 20
Since the coefficient of thermal expansion of the electronic circuit member is 3.0 × 10 ^{−6 to} 1.0 × 10 ⁻⁵ / K, for example, the IC chip 16 is mounted on the electronic circuit member 12A, and the electronic component 10A according to the present embodiment is mounted. With the use of the electronic component 10A, the IC chip 16
The temperature of the heat sink material 20 and the insulating substrate 2
4 does not occur, and the reliability can be improved.

In particular, in the first embodiment, a hard brazing material containing an active element is used as the first bonding material 26, so that the heat radiation is excellent as compared with the case where a solder layer is used. Therefore, the heat generated from the above-described IC chip 16 is efficiently transmitted to the heat sink material 20, and the thermal design for the electronic component 10A can be easily performed. Further, even when the insulating substrate 24 is exposed to a heat cycle, a thermal shock, or the like, cracks and the like hardly occur in the insulating substrate 24, and the thermal reliability can be improved.

That is, when soldering is used as in the conventional case, when a thermal cycle or a thermal shock is applied, the substrate is warped: the insulating substrate 24 is peeled off, and the electrode 30 is peeled off.
Crack 4: A crack occurs in the soldered portion, resulting in a malfunction of the semiconductor element. However, in the present embodiment, the above-described series of problems does not occur, and a highly reliable electronic circuit member. 12A and electronic components 10A
Can be provided.

As the heat sink material 20, S
SiC / Cu in which iC base material is impregnated with Cu or Cu alloy
A C / Cu composite material 20B composed of a composite material 20A or a C (carbon) base material impregnated with Cu or a Cu alloy
Is used, a low coefficient of thermal expansion and a high coefficient of thermal conductivity can be achieved.
It is possible to greatly reduce the mismatch in the coefficient of thermal expansion between the substrate and the substrate, thereby making it possible to perform almost the same, thereby suppressing the occurrence of residual stress on the insulating substrate 24 at the time of joining, and enabling the joining process in a large area. Become.

For example, in the C / Cu composite material 20B, as shown in the above-mentioned Japanese Patent Application No. 2000-80833, the Young's modulus, which is one of the physical properties of the material, is extremely low. . Thereby, the insulating substrate 24
Cracks and peeling of the insulating substrate 24 are less likely to occur.

Further, since the AlN layer or the Si ₃ N ₄ layer is used as the insulating substrate 24, the insulating substrate 24 having substantially the same thermal expansion coefficient as the IC chip 16 and having high thermal conductivity is formed. be able to.

Further, since the surface 20a of the heat sink material 20 to which the cooling fins 18 are attached has a convex shape outward, the cooling fins 18
For example, when fixing is performed by screwing or the like, the work of fixing the heat sink material 20 and the cooling fins 18 is facilitated, the adhesion between these members can be improved, and the heat dissipation can be improved.

Next, two experimental examples (first and second experimental examples) will be described with reference to FIGS. Here, in the first and second experimental examples, Examples 1 to 8 and Comparative Examples 1 and 2 were tested.
FIG. 6 shows a difference in the structure between Comparative Examples 1 and 2 and Comparative Examples 1 and 2.

That is, in the first embodiment, as the insulating substrate 24,
Thermal conductivity is 180W / mK, length × width is 40 × 5
Using an insulating substrate made of AlN (aluminum nitride) having a thickness of 0 mm and a thickness of 0.635 mm, Cu (pure copper) having a length of 35 mm x 45 mm and a thickness of 0.30 mm is used as an electrode 30.
A C / Cu composite material of 50 × 80 mm in length × width and 3.0 mm in thickness was used as the heat sink material 20.

Then, the insulating substrate 24 and the heat sink material 2
0, and between the electrode 30 and the insulating substrate 24, a commercially available Ag-C as the first and second bonding materials 26 and 30.
u-Ti brazing material (Ag-35.25Cu-1.75T)
The sheet having a plate thickness of 50 μm in i) was placed. Then, 0.
At a predetermined temperature (850 ° C.) under a vacuum of
After holding it for 0 minutes, it is cooled down and the joined body (electronic circuit member 1
2A) was prepared.

The electronic circuit member 12A was loaded with a pressure of 1 MPa during the temperature increase and decrease. The electronic circuit member 12A is provided between the heat sink material 20 and the insulating substrate 24, and between the electrode 30 and the insulating substrate 24, each of a brazing material (first and second brazing materials) having a thickness of about 5 μm or less. The joining materials 26 and 28) were interposed.

The second embodiment has substantially the same configuration as the first embodiment, except that the first and second electrodes are provided between the insulating substrate 24 and the heat sink material 20 and between the electrode 30 and the insulating substrate 24. Commercially available Ag-Cu-I as bonding materials 26 and 28
n-Ti brazing material (Ag-27.25Cu-12.5In)
The difference is that a sheet with a thickness of -1.25 Ti) of 50 μm is mounted.

Embodiments 3 and 4 have substantially the same configuration as Embodiments 1 and 2 above, respectively.
The difference is that the SiC / Cu composite material 20A is used as 0.

Examples 5 to 8 correspond to Example 1 described above, respectively.
4 has substantially the same configuration as that of FIG.
Thermal conductivity is about 90W / mK, length × width is 40 × 5
0 mm, 0.30 mm thick Si ₃ N ₄ (silicon nitride)
Is different in that an insulating substrate made of aluminum is used.

Comparative Example 1 has substantially the same configuration as the electronic component 200 according to another conventional example shown in FIG. 11, and has a ceramic plate 206 having a thermal conductivity of 180 W / mK.
A x 40 mm x 50 mm x 0.635 mm
A copper-clad insulating substrate having an upper electrode 210 and a lower electrode 214 made of Cu (pure copper) having a length of 35 × 45 mm and a thickness of 0.30 mm on both sides of an insulating substrate made of 1N (aluminum nitride) is used. As a heat sink material (metal base plate) 202, a Cu heat sink having a length of 50 × 80 mm and a width of 3.0 mm was used. The circuit pattern of the upper electrode 210 is plated with Ni-P for surface protection. Then, the copper-clad insulating substrate provided with the surface protection was soldered to the heat sink material 202 to form a joined body (member for electronic circuit).

Comparative Example 2 has substantially the same configuration as that of the present embodiment, and has a thermal conductivity of 180 W /
mK, length × width is 40 × 50 mm, and thickness is 0.1 mm.
Using an insulating substrate made of 635 mm AlN (aluminum nitride), the electrode 30 is 35 × 45 mm in length × width,
Using a Cu (pure copper) electrode having a thickness of 0.30 mm, the heat sink material 20 is 50 × 80 mm in length × width,
A Cu heat sink having a thickness of 3.0 mm was used.

Then, the insulating substrate 24 and the heat sink material 2
0, and between the electrode 30 and the insulating substrate 24, a commercially available Ag-C as the first and second bonding materials 26 and 28.
u-In-Ti brazing material (Ag-27.25 Cu-12.
5In-1.25Ti) sheet having a thickness of 50 μm was placed. Next, 730 ° C. under a vacuum of 0.00133 Pa.
For 10 minutes, and then cooled to produce a joined body (electronic circuit member 12A). A pressure of 1 MPa was applied to the electronic circuit member 12A during the temperature increase and the temperature decrease.

The first experimental example is similar to Examples 1 to 8 and Comparative Example 1.
And 2 are thermal resistance values. First, FIG.
Was manufactured. In the thermal resistance measuring device 80, a heater 82 is bonded to the upper part of the electronic circuit member 12A (more precisely, the upper part of the electrode 30) via solder, and the lower surface of the electronic circuit member 12A (more accurately, the heat sink material 2).
0 is provided with a cooling device 84 for circulating cooling water to the lower surface 20a). The cooling device 84 includes a water bath 86 with a pump and a flow meter 88.

Then, the heater 82 generates heat at 10 W,
In the cooling device 84, the water temperature is 24 ° C., the flow rate is 2 liters /
Circulates the cooling water in minutes,
Measure the temperature of the interface between the heat sink material 20 and the cooling water,
The thermal resistance of each Example and Comparative Example was calculated. The thermal resistance was evaluated relative to the case of Comparative Example 1 as 1.

FIG. 7 shows the experimental results of the first experimental example. From FIG. 7, Examples 1 to 6 each have a thermal resistance of 1 or less, which is lower than that of Comparative Example 1. This indicates that the temperature difference between the heater surface and the interface (the interface between the heat sink material 20 and the cooling water) is small, and it can be seen that the cooling effect is superior to that of Comparative Example 1.

The thermal resistances of Examples 7 and 8 are almost the same as those of Comparative Example 1. However, in terms of good thermal shock resistance, the overall cooling effect is better than Comparative Example 1. It is possible to obtain a heat dissipation laminated member.

Next, a second experimental example is described in Examples 11 to 13.
And Comparative Examples 1 and 2, in which the warping state of the electronic circuit member 12A, that is, how the surface on which the cooling fin 18 is attached is warped outward.

Embodiments 11 to 13 each have substantially the same configuration as the structure of Embodiment 2 described above. The eleventh embodiment has exactly the same configuration as the second embodiment, the twelfth embodiment differs from the configuration of the second embodiment in that the heat expansion coefficient of the heat sink material 20 is 6.2 ppm / K, and the thirteenth embodiment has The heat expansion coefficient of the heat sink material 20 is set to 8.4 p with respect to the configuration of the second embodiment.
pm / K.

FIG. 8 shows the experimental results. In FIG. 8, the amount of warpage indicates the amount of warpage when the maximum length of the heat sink material 20 is 100 mm.

From the experimental results, it can be seen that Comparative Example 1 hardly warps, and Comparative Example 2 warps in a concave shape. Each of Examples 11 to 13 is warped in a convex shape, which is a preferable embodiment. At this time, it is possible to control the coefficient of thermal expansion of the heat sink material 20 and obtain an arbitrary amount of warpage as the heat dissipation laminated member.

Next, the electronic component 1 according to the second embodiment
OB will be described with reference to FIGS.

Electronic component 10 according to the second embodiment
B has substantially the same configuration as the electronic component 10A according to the above-described first embodiment, as shown in FIG. 10, but the configuration of the electronic circuit member 12B is partially different. Specifically, the heat conductive layer 22 includes an intermediate layer 90 interposed between the insulating substrate 24 and the heat sink material 20, and further includes a third junction including an active element between the insulating substrate 24 and the intermediate layer 90. A material 92 is interposed, and a fourth bonding material 94 containing an active element is interposed between the intermediate layer 90 and the heat sink material 20. In the example of FIG. 10, the metal layer 96 is formed on the lower surface of the heat sink material 20.

Here, the dimensions, particularly the minimum thickness, of the electrode 30 are determined by the current density of the flowing current, and the maximum thickness is determined by the control target of the thermal shock resistance after bonding or the amount of warpage of the entire electronic component 10B. . The preferred range is 0.
1 to 1.0 mm. In this example, it is 0.3 mm. When AlN is used as the insulating substrate 24, 0.5 mm can be adopted.

On the other hand, among the dimensions of the insulating substrate 24, the minimum thickness is selected so as to ensure the insulation of the current flowing through the electrode 30, but since the entire electronic component 10B is the most brittle material, it is actually Above, the strength determines the minimum thickness. That is, the thickness is preferably such that it can withstand thermal shock.

The maximum thickness of the insulating substrate 24 is determined by the value of the thermal resistance (the greater the thickness, the worse the thermal resistance). Thicker ones are advantageous in terms of strength, but heat conduction as a circuit may be poor. Therefore, the preferable range of the thickness of the insulating substrate 24 is preferably 0.1 to 1.0 mm. When AlN is used as the insulating substrate 24, the maximum thickness is 0.635.
mm is more preferable.

The intermediate layer 90 reduces the difference in thermal expansion between the insulating substrate 24 and the heat sink material 20 at the time of thermal shock, improves the bonding property of the entire electronic component 10B, and also improves the thermal shock resistance. be able to.

The preferred thickness is 0.05 to 1.0 mm. If only the stress is relaxed, there is an effect (stress relaxation) even if the thickness is small, but the volume of the intermediate layer 90 is reduced by the electrode 30.
If the volume is set to be approximately the same as above, the balance between the upper and lower sides of the insulating substrate 24 is improved.

When the intermediate layer 90 is a metal layer, if the thickness increases, the heat conduction of the electronic component 10B as a whole improves. Therefore, it is preferable to determine the thickness of the intermediate layer 90 in consideration of the increase.

Accordingly, as a material of the intermediate layer 90, copper, silver, aluminum, or an alloy thereof having high heat conductivity can be cited. The effect of stress relaxation is as follows. Since silver is about 5 to 6, it is preferable to consider the thickness according to the ratio.

The heat conduction was 230 W for aluminum.
/ MK, copper is about 390 W / mK, and silver is about 415 W / mK. Among them, silver is the best, but it is preferable to select in consideration of the production cost and the temperature of the joining materials 92 and 94. In the second embodiment, aluminum or copper is selected as the material of the intermediate layer 90.

As described above, the intermediate layer 90 has a function of alleviating stress generated due to a difference in thermal expansion and a function of improving heat radiation.

The heat sink material 20 has a strength for fixing to the cooling fins 18 and the IC chip 1 on the electrode 30
The size is determined by the conductivity of the heat generated in 6. Usually, it is about 3 mm. However, a method of directly cooling the heat sink material 20 with water or air cooling by giving the heat sink material 20 a fin shape can be considered. Therefore, the thickness of the heat sink material 20 is preferably 1 to 30 mm.

The material of the metal layer 96 formed on the lower surface of the heat sink material 20 is preferably selected according to the compatibility with the cooling fins 18 fixed to the heat sink material 20. Of course, the heat sink material 20 can be directly water-cooled,
In the case where the heat sink material 20 itself has a fin shape, a thickness, a shape, or the like corresponding to the shape may be considered.

The third and fourth bonding members 92 and 94 are the same as those of the electronic component 10A according to the first embodiment described above.
Since they are the same as the first and second bonding materials 26 and 28 used in the above, their duplicate description is omitted here.

Next, a method of manufacturing the electronic circuit member 12B and the electronic component 10B according to the second embodiment will be described with reference to FIG.
This will be described with reference to FIG. 1A and FIG. 11B.

In the manufacturing method according to the second embodiment, first, in the setting step shown in FIG. 11A, the fourth bonding material 94, the intermediate layer 90, the third bonding material 92, The substrate 24, the second bonding material 28, and the electrode 30 are placed (set) in this order. This setting is performed, for example, in the atmosphere.

Next, in the joining step shown in FIG. 11B,
The fourth bonding material 94, the intermediate layer 90, and the third bonding material 9
2. The heat sink material 20 on which the insulating substrate 24, the second bonding material 28, and the electrodes 30 are set is fixed on a jig 70, and is applied from above in a vacuum of, for example, 1.0 × 10 ⁻⁵ Torr or less. Bonding is performed while raising and lowering the temperature while applying pressure. By this joining process, as shown in FIG.
A joined body in which the electrode 30, the insulating substrate 24, and the heat sink material 20 are integrated, that is, the electronic circuit member 12B is obtained.

The pressure in the joining step is preferably 0.2 MPa or more and 10 MPa or less. In this case, the average thickness of the third and fourth bonding materials 92 and 94 after bonding is 50 μm or less, preferably 10 μm or less,
More preferably, it is 5 μm or less. This thickness can be controlled by the pressure.

The subsequent processing is the same as that of the method of manufacturing the electronic circuit member 12A and the electronic component 10A according to the first embodiment described above, and the description thereof will not be repeated.

In the electronic circuit member 12B, the manufacturing method thereof, and the electronic component 10B according to the second embodiment, the third bonding material 92 containing the active element is provided between the insulating substrate 24 and the intermediate layer 90. A fourth bonding material 94 containing an active element between the intermediate layer 90 and the heat sink material 20
And the third and fourth bonding materials 9
2 and 94, the insulating substrate 24
And the intermediate layer 90 are firmly joined, and the intermediate layer 90
And the heat sink material 20 are firmly joined.

Moreover, due to the presence of the intermediate layer 90, the difference in thermal expansion between the insulating substrate 24 and the heat sink material 20 at the time of thermal shock can be alleviated.
It is possible to improve the bonding property of the entire B. That is, the thermal shock resistance of the electronic circuit member 12B can be improved by the intermediate layer 90.

Here, three experimental examples (referred to as third to fifth experimental examples for convenience) are shown. First, in the third experimental example, as shown in FIG. 12 and FIG. 13, in Examples 21 to 25, the degree of improvement of the thermal conductivity by interposing the intermediate layer 90 was observed.

In Example 21, the insulating substrate 24 was made of AlN having a thermal conductivity of 180 W / mK.
5 is an insulating substrate 24 having a thermal conductivity of 30,
Examples using ₄₀ , 60, and 90 W / mK of Si ₃ N ₄ will be described. The experimental results are shown in FIGS. The intermediate layer 90 was made of Cu having a thermal conductivity of 390 W / mK. In FIG. 12, Si ₃ N ₄ as the material of the insulating substrate 24 is simply indicated as “SN”.

In FIG. 13, the bar graph shows the insulating substrate 24.
, And the line graph plots the theoretical thermal conductivity of the joined body (the electronic circuit member 12B).

From these FIGS. 12 and 13, the intermediate layer 9 is obtained.
It can be seen that the thermal conductivity of the joined body was greatly improved by interposing 0, and in particular, Example 2
In 2 to 25, the thermal conductivity of the insulating substrate 24 is 3 to 6
A two-fold improvement is shown.

Next, in the fourth experimental example, the warpage of the joined body (member for electronic circuit) due to the pressure at the time of joining was measured with and without the intermediate layer 90 interposed. FIG. 14 shows the results of this experiment.

From FIG. 14, it can be seen that the warpage is smaller when the intermediate layer 90 is provided, the warpage is smaller when the pressing force is smaller, and the warpage is smaller when the intermediate layer 90 is thinner. You can see that it is.

When a metal layer is used as the intermediate layer 90,
As described above, as the thickness increases, the thermal conductivity of the electronic component 10B as a whole improves, but the smaller the thickness, the smaller the amount of warpage. Is determined to be preferable.

In the fifth experimental example, the thermal shock resistance of Examples 51 to 53 was tested. Example 51
Has a configuration in which Si ₃ N ₄ is used as the insulating substrate 24 and the intermediate layer 90 is interposed. Example 52 has a configuration in which AlN is used as the insulating substrate 24 and the intermediate layer 90 is interposed. Example 53 has a configuration in which Si ₃ N ₄ is used as the insulating substrate 24 and the intermediate layer 90 is not interposed.

The thermal shock test was performed using a thermal shock tester (TASA-71: TSA-71).
S) was performed. This thermal shock test apparatus is divided into three areas: a sample setting area, a high-temperature area, and a low-temperature area. A damper (a role of a temperature shutter) that opens and closes the sample chamber opens and closes the sample chamber. It has a structure that changes instantly to low, normal, and high temperatures.

The test was carried out at −65 ° C. after holding at room temperature for 5 minutes.
After keeping the temperature at −65 ° C. for 15 minutes, the temperature was raised to room temperature, and then kept at room temperature for 5 minutes, then raised to 150 ° C., kept at 150 ° C. for 15 minutes, and then cooled to room temperature. This series of operations was defined as one cycle.

Five samples were prepared for each sample, and one of them was used to determine the number of cycles at which cracks occurred on the insulating substrate or peeling occurred at the joint of the heat radiating plate. The properties were evaluated.

The determination of the presence or absence of cracks on the insulating substrate 24 after the above thermal shock test was evaluated using an ultrasonic flaw detector (AT7500, manufactured by Hitachi).

As a result of the fifth experimental example, the thermal shock resistance of Example 51 was 1000 cycles or more.
Was 200 cycles or less, and Example 53 was around 500 times.

Accordingly, it can be seen that the thermal shock resistance is improved by using Si ₃ N ₄ as the insulating substrate 24 and interposing the intermediate layer 90.

The electronic circuit member, the method of manufacturing the same, and the electronic component according to the present invention are not limited to the above-described embodiments, but may adopt various configurations without departing from the gist of the present invention. It is.

[0133]

As described above, according to the electronic circuit member, the method of manufacturing the same, and the electronic component according to the present invention,
The number of manufacturing steps can be greatly reduced, the manufacturing cost can be effectively reduced, and the thermal reliability can be improved.

[Brief description of the drawings]

FIG. 1 is a longitudinal sectional view illustrating a configuration of an electronic component according to an embodiment.

FIG. 2 is a cross-sectional view showing an electronic circuit member and cooling fins according to the present embodiment.

FIG. 3 is an example of a constituent material of a heat sink material, SiC.
It is an enlarged view which shows a / Cu composite material.

FIG. 4 shows another example of the constituent material of the heat sink material, C /
It is an enlarged view which shows a Cu composite material.

FIG. 5A is an explanatory view showing a setting step, and FIG. 5B is an explanatory view showing a joining step.

FIG. 6 is a table showing the configurations of Examples 1 to 8 and Comparative Examples 1 and 2.

FIG. 7 is a table showing experimental results of the first and second experimental examples.

FIG. 8 is a table showing experimental results of a third experimental example.

FIG. 9 is an explanatory diagram showing a schematic configuration of a thermal resistance measuring device.

FIG. 10 is a longitudinal sectional view illustrating a configuration of an electronic component according to a second embodiment.

FIG. 11A is an explanatory view showing a setting step, and FIG. 11B is an explanatory view showing a joining step.

FIG. 12 is a table showing the results of a third experimental example.

FIG. 13 is a graph showing a result of the third experimental example.

FIG. 14 is a table showing the results of a fourth experimental example.

FIG. 15 is a longitudinal sectional view showing an electronic component according to a conventional example.

FIG. 16 is a longitudinal sectional view showing an electronic component according to another conventional example.

[Explanation of symbols]

10A, 10B: Electronic components 12A, 12B: Electronic circuit members 14: Underlayer 16: IC chip 18: Cooling fins 20: Heat sink material 22: Heat conductive layer 24: Insulating substrate 26: First bonding material 28: Second Joining material 30 ... electrode 90 ... intermediate layer 92 ... third joining material 94 ... fourth joining material

Continuation of the front page (72) Inventor Masahiro Kida 2-56, Suda-cho, Mizuho-ku, Nagoya-shi, Aichi Japan Inside Nihon Insulators Co., Ltd. (72) Inventor Ken Suzuki 2-56, Suda-cho, Mizuho-ku, Nagoya-shi, Aichi Sun F-term (for reference) 4H0BA BA01 BB01 BB02 BB03 BB13 BB14 BB16 BB17 BB21 BB22 BB27 BB35 BD14 BF11 BF42 BG03 BG23 BH07 5F036 AA01 BB05 BB21 BC06 BD01 BD03 BD13 BD14

Claims (26)

[Claims] 1. A member for an electronic circuit, wherein a bonding material containing an active element is interposed between a layer functioning as an insulating substrate and a heat sink material. 2. An intermediate layer is interposed between a layer functioning as an insulating substrate and a heat sink material, between the layer functioning as the insulating substrate and the intermediate layer, and between the intermediate layer and the heat sink material. A bonding material containing an active element interposed therebetween. 3. The electronic circuit member according to claim 1, wherein a coefficient of thermal expansion of the layer functioning as the insulating substrate, the bonding material, and the heat sink material is 3.0 × 10 ^{−6 to} 1.0. ×
A member for an electronic circuit, which is 10 ^-5 / K. 4. The electronic circuit member according to claim 1, wherein said bonding material is a hard brazing material containing an active element. 5. The electronic circuit member according to claim 1, wherein the active element is a group 2A, a group 3A, or a group 4A of the periodic table.
A member for an electronic circuit, wherein the member is at least one of elements belonging to any one of Group 5, 5A, and 4B. 6. The electron according to claim 1, wherein
In the circuit member, the heat sink material is SiC, AlN, Si_ThreeN_Four, B
eO, Al_TwoO_Three, Be _TwoC, C, Cu, Cu alloy, A
1, Al alloy, Ag, Ag alloy, Si
Characterized in that at least one selected material is a constituent material.
For electronic circuits. 7. The electronic circuit member according to claim 6, wherein the heat sink material is made of a composite material in which a SiC base material is impregnated with Cu or a Cu alloy. 8. The electronic circuit member according to claim 6, wherein said heat sink material is made of a composite material in which a C base material is impregnated with Cu or a Cu alloy. 9. The electronic circuit member according to claim 1, wherein the layer functioning as the insulating substrate is an AlN layer or a Si ₃ layer.
An electronic circuit member comprising an N ₄ layer. 10. The electronic circuit member according to claim 1, wherein a surface of the heat sink material to which the cooling fin is attached has a convex shape toward the outside. Characteristic electronic circuit member. 11. The electronic circuit member according to claim 10, wherein the amount of protrusion of the convex shape of the heat sink material is 1/200 to 1/20000 with respect to the maximum length of the heat sink material. Circuit components. 12. A method for manufacturing a member for an electronic circuit, comprising simultaneously bonding a heat sink material, a layer functioning as an insulating substrate, and an electrode. 13. A method for manufacturing a member for an electronic circuit, comprising a step of bonding a layer functioning as an insulating substrate on a heat sink material via a bonding material containing an active element. 14. An intermediate layer is interposed between a heat sink material and a layer functioning as an insulating substrate, and a first bonding material containing an active element is interposed between the layer functioning as the insulating substrate and the intermediate layer. And a step of joining these members with a second joining material containing an active element interposed between the intermediate layer and the heat sink material. 15. The method of manufacturing an electronic circuit member according to claim 12, wherein the joining step is performed with pressurization. . 16. The method for manufacturing an electronic circuit member according to claim 15, wherein the pressing force is 0.2 MPa or more and 10 MPa or less. 17. The method of manufacturing an electronic circuit member according to claim 13, wherein the layer functioning as the insulating substrate, the bonding material, and the heat sink material each have a coefficient of thermal expansion of 3.0 × 10 ^−6.
A method for manufacturing an electronic circuit member, wherein a member having a thickness of 1.0 to ^10-5 / K is used. 18. A method for manufacturing an electronic circuit member according to claim 13, wherein a hard brazing material containing an active element is used as said bonding material. Manufacturing method of the member. 19. The method of manufacturing an electronic circuit member according to claim 18, wherein the active element is any one of Group 2A, 3A, 4A, 5A or 4B of the periodic table. A method for producing a member for an electronic circuit, comprising using at least one of the elements belonging to the electronic circuit. 20. The method of manufacturing an electronic circuit member according to claim 12, wherein the heat sink material is made of SiC, AlN, Si.
_{3 N 4, BeO, Al 2} O 3, Be 2 C, C, Cu, Cu alloy, Al, Al alloy, Ag, Ag alloy, the one that at least one of the materials of construction selected from the group consisting of Si A method for manufacturing a member for an electronic circuit, which is used. 21. The method of manufacturing an electronic circuit member according to claim 20, wherein the heat sink material is made of Cu or Cu on a SiC base material.
A method for producing an electronic circuit member, comprising using a composite material impregnated with an alloy. 22. The method of manufacturing an electronic circuit member according to claim 20, wherein the heat sink material is made of a composite material in which a C base material is impregnated with Cu or a Cu alloy. A method for manufacturing an electronic circuit member. 23. The method for manufacturing a member for an electronic circuit according to claim 12, wherein the layer functioning as the insulating substrate is an AlN layer or an SN layer.
A method for manufacturing an electronic circuit member, comprising using an i ₃ N ₄ layer. 24. An electronic component having an electronic circuit chip mounted on a heat sink material via a heat conductive layer and a base layer, wherein the heat conductive layer is at least between a layer functioning as an insulating substrate and the heat sink material. An electronic component comprising a bonding material containing an active element interposed therebetween. 25. An electronic component in which an electronic circuit chip is mounted on a heat sink material via a heat conductive layer and a base layer, wherein the heat conductive layer is intermediate between at least a layer functioning as an insulating substrate and the heat sink material. A first bonding material containing an active element between the layer functioning as the insulating substrate and the intermediate layer; and a second bonding material containing an active element between the intermediate layer and the heat sink material. An electronic component characterized in that the bonding material is interposed. 26. The electronic component according to claim 24, wherein the heat conductive layer has an electrode formed on a layer functioning as the insulating substrate via another bonding material containing an active element. Electronic components featured.