JP2012248697A - Method for manufacturing laminated material for insulating substrate - Google Patents

Method for manufacturing laminated material for insulating substrate Download PDF

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JP2012248697A
JP2012248697A JP2011119547A JP2011119547A JP2012248697A JP 2012248697 A JP2012248697 A JP 2012248697A JP 2011119547 A JP2011119547 A JP 2011119547A JP 2011119547 A JP2011119547 A JP 2011119547A JP 2012248697 A JP2012248697 A JP 2012248697A
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layer
laminated
plate
laminates
brazing
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JP5869781B2 (en
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Atsushi Otaki
篤史 大滝
Shigeru Oyama
茂 大山
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Showa Denko Kk
昭和電工株式会社
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

The present invention provides a method for producing a laminated material for an insulating substrate, which has good solderability and can prevent the occurrence of cracking and peeling at the joint interface and the deformation of the surface of a Ni layer.
A laminated material 1 includes a Ni layer 2 formed of Ni or a Ni alloy to which a semiconductor element 21 is bonded to a surface 2a, and an intermediate layer 3 disposed on the side opposite to the surface 2a side of the Ni layer 2. And Ti layer 4 formed of Ti or Ti alloy disposed on the opposite side of the intermediate layer 3 from the Ni layer 2 disposed side, and Al disposed on the opposite side of the Ti layer 4 from the disposed side of the intermediate layer 3 Or an Al layer 5 formed of an Al alloy. The intermediate layer 3 is an Al layer 3a formed of Al or an Al alloy, or a Cu layer 3c formed of Cu or a Cu alloy. These layers 2, 3, 4, and 5 are integrated into a laminated form.
[Selection] Figure 3

Description

  The present invention relates to a method for manufacturing a laminated material for an insulating substrate used for heat dissipation of a semiconductor element, for example, a laminated material for an insulating substrate, an insulating substrate, and a semiconductor module.

  In the present specification, the term “plate” is used to include “foil”.

  A semiconductor module such as a power semiconductor module includes a heat radiating member (eg, a heat sink, a cooler) in order to release heat generated from the semiconductor element due to the operation of the semiconductor element. Further, in this semiconductor module, an insulating substrate for heat dissipation for transferring heat generated from the semiconductor element to the heat dissipation member is disposed between the semiconductor element and the heat dissipation member. This insulating substrate is a conductor thermally but functions electrically as an insulator. Specifically, a ceramic layer as an electrical insulating layer and a wiring layer bonded on one side thereof A metal layer including a (circuit layer) (see, for example, Patent Documents 1 to 4). Then, the semiconductor element is joined to the metal layer of the insulating substrate by soldering.

  In recent years, an Al layer formed of Al or an Al alloy has been used as a layer constituting the metal layer. The reason is that the Al layer is excellent in electrical characteristics and thermal characteristics, and the use of the Al layer can reduce the manufacturing cost of the insulating substrate.

JP 2004-328012 A JP 2004-235503 A JP 2006-303346 A JP 2009-147123 A

  However, the Al layer has poor solderability. For this reason, a Ni plating layer is formed as a Ni layer on the surface of the Al layer so that the semiconductor elements can be joined by soldering. In this case, the strength of the bonding interface between the Al layer and the Ni plating layer is high. A weak and weak alloy layer is formed. As a result, the alloy layer is likely to be cracked or peeled off due to the thermal stress (thermal strain) generated with the cooling cycle, and the surface of the Ni layer is likely to be deformed (unevenness).

  The present invention has been made in view of the above-described technical background, and an object thereof is a laminated material used for an insulating substrate, which has good solder jointability, generation of cracks and peeling at the joint interface, and Ni. An object of the present invention is to provide a method for manufacturing a laminated material for an insulating substrate, a laminated material, an insulating substrate, and a semiconductor module, which can prevent the deformation of the surface of the layer.

  The present invention provides the following means.

[1] A Ni layer formed of Ni or Ni alloy to which a semiconductor element is bonded to the surface;
The Ni layer is disposed on the opposite side of the surface side, and consists of an intermediate Al layer formed of Al or Al alloy, or an intermediate layer of an intermediate Cu layer formed of Cu or Cu alloy,
A Ti layer formed of Ti or a Ti alloy disposed on the opposite side of the intermediate layer from the Ni layer disposed side;
Insulating substrate lamination comprising an integration step of integrating the Ti layer with an Al layer formed of Al or an Al alloy disposed on the side opposite to the intermediate layer arrangement side of the Ti layer. A method of manufacturing the material.

[2] The Ni layer is formed from a Ni plate or a Ni alloy plate,
The intermediate layer is formed from an Al plate or an Al alloy plate, or formed from a Cu plate or a Cu alloy plate,
The Ti layer is formed from a Ti plate or a Ti alloy plate,
The Al layer is formed from an Al plate or an Al alloy plate,
In the integration step, bonding of the Ni layer and the intermediate layer, bonding of the intermediate layer and the Ti layer, and bonding of the Ti layer and the Al layer are simultaneously performed by a discharge plasma sintering method. 2. A method for producing a laminated material for an insulating substrate according to 1 above.

[3] In the integration step,
A plurality of laminates of the Ni layer, the intermediate layer, the Ti layer, and the Al layer are prepared, and the plurality of laminates are laminated via a conductive release member between the laminates that overlap each other.
Next, a pulse current is applied between both punches while simultaneously pressing the plurality of laminates in the stacking direction with a pair of discharge plasma sintering punches arranged on both sides in the stacking direction of the plurality of stacks. The manufacturing method of the laminated material for insulating substrates of the preceding clause 2 which performs predetermined joining simultaneously with respect to each laminated body by doing.

[4] The laminated material includes a brazing material layer arranged on the side of the Al layer opposite to the Ti layer arrangement side,
In the integration step, the bonding between the Ni layer and the intermediate layer, the bonding between the intermediate layer and the Ti layer, the bonding between the Ti layer and the Al layer, the Al layer and the brazing material layer 3. The method for producing a laminated material for an insulating substrate as recited in the aforementioned Item 2, wherein the bonding is performed simultaneously by a discharge plasma sintering method.

[5] In the integration step,
A plurality of laminates of the Ni layer, the intermediate layer, the Ti layer, the Al layer, and the brazing material layer are prepared, and a conductive release member is interposed between the laminates that overlap the plurality of laminates. Laminated
Next, a pulse current is applied between both punches while simultaneously pressing the plurality of laminates in the stacking direction with a pair of discharge plasma sintering punches arranged on both sides in the stacking direction of the plurality of stacks. The manufacturing method of the laminated material for insulating substrates of the preceding clause 4 which performs predetermined joining simultaneously with respect to each laminated body by doing.

[6] The Ni layer is formed from a Ni plate or a Ni alloy plate,
The intermediate layer is formed by vapor deposition on the Ni layer,
The Ti layer is formed from a Ti plate or a Ti alloy plate,
The Al layer is formed from an Al plate or an Al alloy plate,
2. The method for manufacturing a laminated material for an insulating substrate according to 1 above, wherein in the integration step, the intermediate layer and the Ti layer are bonded together and the Ti layer and the Al layer are bonded together by a discharge plasma sintering method. .

[7] In the integration step,
A plurality of laminates of the Ni layer, the intermediate layer, the Ti layer, and the Al layer are prepared, and the plurality of laminates are laminated via a conductive release member between the laminates that overlap each other.
Next, a pulse current is applied between both punches while simultaneously pressing the plurality of laminates in the stacking direction with a pair of discharge plasma sintering punches arranged on both sides in the stacking direction of the plurality of stacks. 7. The method for manufacturing a laminated material for an insulating substrate as recited in the aforementioned Item 6, wherein predetermined bonding is simultaneously performed on each laminated body.

[8] The laminated material includes a brazing material layer disposed on the side of the Al layer opposite to the Ti layer arrangement side,
In the integration step, the bonding between the intermediate layer and the Ti layer, the bonding between the Ti layer and the Al layer, and the bonding between the Al layer and the brazing material layer are simultaneously performed by a discharge plasma sintering method. The manufacturing method of the laminated material for insulating substrates of Claim 6 to perform.

[9] In the integration step,
A plurality of laminates of the Ni layer, the intermediate layer, the Ti layer, the Al layer, and the brazing material layer are prepared, and a conductive release member is interposed between the laminates that overlap the plurality of laminates. Laminated
Next, a pulse current is applied between both punches while simultaneously pressing the plurality of laminates in the stacking direction with a pair of discharge plasma sintering punches arranged on both sides in the stacking direction of the plurality of stacks. 9. The method for manufacturing a laminated material for an insulating substrate according to 8 above, wherein predetermined bonding is simultaneously performed on each laminated body.

[10] The Ni layer is formed from a Ni plate or a Ni alloy plate,
The intermediate layer is formed by vapor deposition on the Ni layer,
The Ti layer is formed by vapor deposition on the intermediate layer,
The Al layer is formed from an Al plate or an Al alloy plate,
2. The method for manufacturing a laminated material for an insulating substrate according to item 1, wherein in the integration step, the Ti layer and the Al layer are joined by a discharge plasma sintering method.

[11] In the integration step,
A plurality of laminates of the Ni layer, the intermediate layer, the Ti layer, and the Al layer are prepared, and the plurality of laminates are laminated via a conductive release member between the laminates that overlap each other.
Next, a pulse current is applied between both punches while simultaneously pressing the plurality of laminates in the stacking direction with a pair of discharge plasma sintering punches arranged on both sides in the stacking direction of the plurality of stacks. 11. The method for manufacturing a laminated material for an insulating substrate according to 10 above, wherein the predetermined bonding is performed on each laminated body.

[12] The laminated material includes a brazing material layer disposed on the side opposite to the Ti layer arrangement side of the Al layer,
11. The manufacturing method of a laminated material for an insulating substrate according to 10 above, wherein in the integration step, the bonding between the Ti layer and the Al layer and the bonding between the Al layer and the brazing material layer are simultaneously performed by a discharge plasma sintering method. Method.

[13] In the integration step,
A plurality of laminates of the Ni layer, the intermediate layer, the Ti layer, the Al layer, and the brazing material layer are prepared, and a conductive release member is interposed between the laminates that overlap the plurality of laminates. Laminated
Next, a pulse current is applied between both punches while simultaneously pressing the plurality of laminates in the stacking direction with a pair of discharge plasma sintering punches arranged on both sides in the stacking direction of the plurality of stacks. 13. The method for manufacturing a laminated material for an insulating substrate according to 12 above, wherein predetermined bonding is simultaneously performed on each laminated body.

[14] The Ni layer is formed of a Ni plate or a Ni alloy plate,
The intermediate layer is formed by vapor deposition on the Ti layer,
The Ti layer is formed from a Ti plate or a Ti alloy plate,
The Al layer is formed from an Al plate or an Al alloy plate,
2. The method for manufacturing a laminated material for an insulating substrate according to 1 above, wherein in the integration step, the bonding between the Ni layer and the intermediate layer and the bonding between the Ti layer and the Al layer are simultaneously performed by a discharge plasma sintering method. .

[15] In the integration step,
A plurality of laminates of the Ni layer, the intermediate layer, the Ti layer, and the Al layer are prepared, and the plurality of laminates are laminated via a conductive release member between the laminates that overlap each other.
Next, a pulse current is applied between both punches while simultaneously pressing the plurality of laminates in the stacking direction with a pair of discharge plasma sintering punches arranged on both sides in the stacking direction of the plurality of stacks. 15. The method for manufacturing a laminated material for an insulating substrate according to 14 above, wherein predetermined bonding is simultaneously performed on each laminated body.

[16] The laminated material includes a brazing material layer disposed on a side opposite to the Ti layer arrangement side of the Al layer,
In the integration step, the bonding between the Ni layer and the intermediate layer, the bonding between the Ti layer and the Al layer, and the bonding between the Al layer and the brazing material layer are simultaneously performed by a discharge plasma sintering method. 15. The method for producing a laminated material for an insulating substrate according to 14 above.

[17] In the integration step,
A plurality of laminates of the Ni layer, the intermediate layer, the Ti layer, the Al layer, and the brazing material layer are prepared, and a conductive release member is interposed between the laminates that overlap the plurality of laminates. Laminated
Next, a pulse current is applied between both punches while simultaneously pressing the plurality of laminates in the stacking direction with a pair of discharge plasma sintering punches arranged on both sides in the stacking direction of the plurality of stacks. The manufacturing method of the laminated material for insulating substrates of the preceding clause 16 which performs predetermined joining simultaneously with respect to each laminated body by doing.

[18] The Ni layer is formed from a Ni plate or a Ni alloy plate,
The intermediate layer is formed from an Al plate or an Al alloy plate, or formed from a Cu plate or a Cu alloy plate,
The Ti layer is formed by vapor deposition on the Al layer,
The Al layer is formed from an Al plate or an Al alloy plate,
2. The method for manufacturing a laminated material for an insulating substrate according to 1 above, wherein in the integration step, the bonding between the Ni layer and the intermediate layer and the bonding between the intermediate layer and the Ti layer are simultaneously performed by a discharge plasma sintering method. .

[19] In the integration step,
A plurality of laminates of the Ni layer, the intermediate layer, the Ti layer, and the Al layer are prepared, and the plurality of laminates are laminated via a conductive release member between the laminates that overlap each other.
Next, a pulse current is applied between both punches while simultaneously pressing the plurality of laminates in the stacking direction with a pair of discharge plasma sintering punches arranged on both sides in the stacking direction of the plurality of stacks. 19. The method for manufacturing a laminated material for an insulating substrate according to 18 above, wherein predetermined bonding is simultaneously performed on each laminated body.

[20] The laminated material includes a brazing material layer disposed on the side of the Al layer opposite to the Ti layer arrangement side,
In the integration step, the joining of the Ni layer and the intermediate layer, the joining of the intermediate layer and the Ti layer, and the joining of the Al layer and the brazing material layer are simultaneously performed by a discharge plasma sintering method. 19. The method for producing a laminated material for an insulating substrate according to 18 above.

[21] In the integration step,
A plurality of laminates of the Ni layer, the intermediate layer, the Ti layer, the Al layer, and the brazing material layer are prepared, and a conductive release member is interposed between the laminates that overlap the plurality of laminates. Laminated
Next, a pulse current is applied between both punches while simultaneously pressing the plurality of laminates in the stacking direction with a pair of discharge plasma sintering punches arranged on both sides in the stacking direction of the plurality of stacks. 21. The method for manufacturing a laminated material for an insulating substrate as recited in the aforementioned Item 20, wherein predetermined bonding is simultaneously performed on each laminated body.

[22] The Ni layer is formed from a Ni plate or a Ni alloy plate,
The intermediate layer is formed by vapor deposition on the Ti layer,
The Ti layer is formed by vapor deposition on the Al layer,
The Al layer is formed from an Al plate or an Al alloy plate,
2. The method for manufacturing a laminated material for an insulating substrate according to item 1, wherein in the integration step, the Ni layer and the intermediate layer are joined by a discharge plasma sintering method.

[23] In the integration step,
A plurality of laminates of the Ni layer, the intermediate layer, the Ti layer, and the Al layer are prepared, and the plurality of laminates are laminated via a conductive release member between the laminates that overlap each other.
Next, a pulse current is applied between both punches while simultaneously pressing the plurality of laminates in the stacking direction with a pair of discharge plasma sintering punches arranged on both sides in the stacking direction of the plurality of stacks. The manufacturing method of the laminated material for insulating substrates of the preceding clause 22 which performs predetermined joining with respect to each laminated body by doing.

[24] The laminated material includes a brazing material layer disposed on a side opposite to the Ti layer arrangement side of the Al layer,
23. The production of a laminated material for an insulating substrate as recited in the aforementioned Item 22, wherein in the integration step, the joining of the Ni layer and the intermediate layer and the joining of the Al layer and the brazing material layer are simultaneously performed by a discharge plasma sintering method. Method.

[25] In the integration step,
A plurality of laminates of the Ni layer, the intermediate layer, the Ti layer, the Al layer, and the brazing material layer are prepared, and a conductive release member is interposed between the laminates that overlap the plurality of laminates. Laminated
Next, a pulse current is applied between both punches while simultaneously pressing the plurality of laminates in the stacking direction with a pair of discharge plasma sintering punches arranged on both sides in the stacking direction of the plurality of stacks. The manufacturing method of the laminated material for insulating substrates of the preceding clause 24 which performs predetermined joining simultaneously with respect to each laminated body by doing.

  [26] The method for manufacturing a laminated material for an insulating substrate according to any one of [1] to [25], wherein the Al layer is formed of pure Al having a purity of 4N or higher.

[27] a Ni layer formed of Ni or a Ni alloy to which a semiconductor element is bonded to the surface;
The Ni layer is disposed on the opposite side of the surface side, and consists of an intermediate Al layer formed of Al or Al alloy, or an intermediate layer of an intermediate Cu layer formed of Cu or Cu alloy,
A Ti layer formed of Ti or a Ti alloy disposed on the opposite side of the intermediate layer from the Ni layer disposed side;
A laminated material for an insulating substrate, characterized in that an Al layer formed of Al or an Al alloy arranged on the opposite side of the Ti layer from the intermediate layer arranged side is integrated in a laminated form.

[28] The Ni layer is formed of a Ni plate or a Ni alloy plate,
The intermediate layer is formed from an Al plate or an Al alloy plate, or formed from a Cu plate or a Cu alloy plate,
The Ti layer is formed from a Ti plate or a Ti alloy plate,
The Al layer is formed from an Al plate or an Al alloy plate,
28. The laminated material for an insulating substrate according to 27 above, wherein the Ni layer and the intermediate layer, the intermediate layer and the Ti layer, and the Ti layer and the Al layer are bonded together by a discharge plasma sintering method.

[29] The Ni layer is formed from a Ni plate or a Ni alloy plate,
The intermediate layer is formed by vapor deposition on the Ni layer,
The Ti layer is formed from a Ti plate or a Ti alloy plate,
The Al layer is formed from an Al plate or an Al alloy plate,
28. The laminated material for an insulating substrate according to 27 above, wherein the intermediate layer and the Ti layer, and the Ti layer and the Al layer are bonded together by a discharge plasma sintering method.

[30] The Ni layer is formed from a Ni plate or a Ni alloy plate,
The intermediate layer is formed by vapor deposition on the Ni layer,
The Ti layer is formed by vapor deposition on the intermediate layer,
The Al layer is formed from an Al plate or an Al alloy plate,
28. The laminated material for an insulating substrate according to 27 above, wherein the Ti layer and the Al layer are joined by a discharge plasma sintering method.

[31] The Ni layer is formed of a Ni plate or a Ni alloy plate,
The intermediate layer is formed by vapor deposition on the Ti layer,
The Ti layer is formed from a Ti plate or a Ti alloy plate,
The Al layer is formed from an Al plate or an Al alloy plate,
28. The laminated material for an insulating substrate according to 27 above, wherein the Ni layer and the intermediate layer, and the Ti layer and the Al layer are bonded together by a discharge plasma sintering method.

[32] The Ni layer is formed from a Ni plate or a Ni alloy plate,
The intermediate layer is formed from an Al plate or an Al alloy plate, or formed from a Cu plate or a Cu alloy plate,
The Ti layer is formed by vapor deposition on the Al layer,
The Al layer is formed from an Al plate or an Al alloy plate,
28. The laminated material for an insulating substrate according to 27 above, wherein the Ni layer and the intermediate layer, and the intermediate layer and the Ti layer are bonded together by a discharge plasma sintering method.

[33] The Ni layer is formed of a Ni plate or a Ni alloy plate,
The intermediate layer is formed by vapor deposition on the Ti layer,
The Ti layer is formed by vapor deposition on the Al layer,
The Al layer is formed from an Al plate or an Al alloy plate,
28. The laminated material for an insulating substrate according to 27 above, wherein the Ni layer and the intermediate layer are joined by a discharge plasma sintering method.

[34] A brazing filler metal layer is arranged on the side of the Al layer opposite to the Ti layer arrangement side,
34. The laminated material for an insulating substrate according to any one of items 27 to 33, wherein the Al layer and the brazing material layer are joined by a discharge plasma sintering method.

  [35] The method for manufacturing a laminated material for an insulating substrate according to any one of items 27 to 34, wherein the Al layer is formed of pure Al having a purity of 4N or higher.

  [36] An insulating substrate comprising the laminate material according to any one of items 27 to 35.

  [37] A semiconductor module, wherein a semiconductor element is joined to the surface of the Ni layer of the laminated material according to any one of items 27 to 35 by soldering.

  The present invention has the following effects.

  Here, in this specification, the Al layer constituting the intermediate layer is referred to as an “intermediate Al layer” in order to distinguish it from the Al layer disposed on the opposite side of the Ti layer from the intermediate layer arrangement side. The Cu layer constituting the intermediate layer is referred to as “intermediate Cu layer”.

  In the previous item [1], since the laminated material includes the Ni layer, the solderability is good. Therefore, the semiconductor element can be reliably bonded to the surface of the Ni layer by soldering.

  Furthermore, since the Ti layer is disposed between the Ni layer and the Al layer, the following effects can be obtained. That is, for example, if the Ni layer and the Al layer are directly joined without disposing the Ti layer between the Ni layer and the Al layer, a weak alloy layer having a weak strength at the joint interface between the Ni layer and the Al layer. As a result, the alloy layer is likely to be cracked or peeled off due to thermal stress (thermal strain) generated with the cooling cycle. On the other hand, in the previous item [1], since the Ti layer is disposed between the Ni layer and the Al layer, such a brittle alloy layer is not formed. Thereby, the generation | occurrence | production of the crack and peeling in the joining interface of a laminated material by a thermal stress can be prevented, and also generation | occurrence | production of the deformation | transformation (unevenness | corrugation) of the surface of Ni layer can also be prevented.

  Furthermore, thermal stress can be relaxed in the Al layer, and therefore, cracking of the ceramic layer can be prevented when the laminated material and the ceramic layer of the insulating substrate are joined. As a result, an insulating substrate having high cooling durability can be obtained.

  Furthermore, since the melting point of Al or Cu is generally lower than that of Ni and Ti, an intermediate layer composed of an intermediate Al layer or an intermediate Cu layer is disposed between the Ni layer and the Ti layer, and for example, an Ni layer By heating the intermediate layer, the Ti layer, and the Al layer, the Ni layer, the intermediate layer, the Ti layer, and the Al layer can be easily integrated into a laminated shape.

  In addition, by reducing the thickness of the intermediate Al layer (for example, 6 μm or less), it is possible to suppress the growth of a fragile alloy layer and maintain the strength that can withstand the thermal stress (thermal strain) generated by the thermal cycle. Is possible.

  In the preceding item [2], as described above, since the melting point of Al or Cu is generally lower than the melting points of Ni and Ti, an intermediate layer composed of an Al layer or a Cu layer is provided between the Ni layer and the Ti layer. By disposing, the joining of the Ni layer and the intermediate layer, the joining of the intermediate layer and the Ti layer, and the joining of the Ti layer and the Al layer can be performed simultaneously by the discharge plasma sintering method. Thereby, the number of manufacturing steps of the laminated material can be reduced, and thus the manufacturing cost of the laminated material can be reduced.

  In the preceding item [3], it is possible to manufacture a large amount of laminated material.

  In the preceding item [4], a laminated material with a brazing material layer can be obtained. Thereby, the brazing material layer can be used as a brazing material when the laminated material is bonded to a predetermined layer (eg, ceramic layer) of the insulating substrate. Therefore, the laminated material and the predetermined layer of the insulating substrate can be easily joined.

  In the preceding item [5], a laminated material with a brazing material layer can be produced in large quantities.

  In the above [6], since the intermediate layer is formed by vapor deposition on the Ni layer, the thickness of the intermediate layer can be easily adjusted to a required thickness. Therefore, waste of the material for the intermediate layer can be eliminated, and the material cost for the intermediate layer can be reduced.

  Furthermore, the joining of the intermediate layer and the Ti layer and the joining of the Ti layer and the Al layer can be performed simultaneously by the discharge plasma sintering method, thereby reducing the number of manufacturing steps of the laminated material. .

  Furthermore, since the intermediate layer is formed by vapor deposition on the Ni layer, it is possible to reduce the number of base plates that are set when bonding is performed by the discharge plasma sintering method. As a result, the joining operation can be facilitated.

  Thus, the manufacturing cost of the laminated material can be greatly reduced by reducing the material cost of the intermediate layer, the number of manufacturing steps of the laminated material, and facilitating the joining work.

  The previous items [7] to [9] have the same effects as the previous items [3] to [5], respectively.

  In the preceding item [10], since the intermediate layer is formed by vapor deposition on the Ni layer, the thickness of the intermediate layer can be easily adjusted to a required thickness. Therefore, waste of the material for the intermediate layer can be eliminated, and the material cost for the intermediate layer can be reduced.

  Furthermore, since the Ti layer is formed by vapor deposition on the intermediate layer, the thickness of the Ti layer can be easily adjusted to a required thickness. Therefore, waste of the Ti layer material can be eliminated, and the material cost of the Ti layer can be reduced.

  Furthermore, since the intermediate layer is formed by vapor deposition on the Ni layer and the Ti layer is formed by vapor deposition on the intermediate layer, the base plate that is set when joining by the discharge plasma sintering method The number of can be reduced. As a result, the joining operation can be facilitated.

  In this way, by reducing the material cost of the intermediate layer, reducing the material cost of the Ti layer, reducing the number of manufacturing steps of the laminated material, and facilitating the joining work, the manufacturing cost of the laminated material can be reduced. It can be greatly reduced.

  The previous items [11] to [13] have the same effects as the previous items [3] to [5], respectively.

  In the previous item [14], since the intermediate layer is formed by vapor deposition on the Ti layer, the thickness of the intermediate layer can be easily adjusted to a required thickness. Therefore, waste of the material for the intermediate layer can be eliminated, and the material cost for the intermediate layer can be reduced.

  Further, the joining of the Ni layer and the intermediate layer and the joining of the Ti layer and the Al layer can be performed simultaneously by the discharge plasma sintering method, thereby reducing the number of manufacturing steps of the laminated material. .

  Furthermore, since the intermediate layer is formed by vapor deposition on the Ti layer, the number of base plates to be set when joining by the discharge plasma sintering method can be reduced. As a result, the joining operation can be facilitated.

  Thus, the manufacturing cost of the laminated material can be greatly reduced by reducing the material cost of the intermediate layer, the number of manufacturing steps of the laminated material, and facilitating the joining work.

  The preceding items [15] to [17] have the same effects as the preceding items [3] to [5], respectively.

  In the previous item [18], since the Ti layer is formed by vapor deposition on the Al layer, the thickness of the Ti layer can be easily adjusted to a required thickness. Therefore, waste of the Ti layer material can be eliminated, and the material cost of the Ti layer can be reduced.

  Furthermore, the joining of the Ni layer and the intermediate layer and the joining of the intermediate layer and the Ti layer can be performed simultaneously by the discharge plasma sintering method, thereby reducing the number of manufacturing steps of the laminated material. .

  Furthermore, since the Ti layer is formed by vapor deposition on the Al layer, it is possible to reduce the number of base plates that are set when bonding is performed by the discharge plasma sintering method. As a result, the joining operation can be facilitated.

  Thus, the manufacturing cost of the laminated material can be greatly reduced by reducing the material cost of the Ti layer, reducing the number of manufacturing steps of the laminated material, and facilitating the joining operation.

  The previous items [19] to [21] have the same effects as the previous items [3] to [5], respectively.

  In the preceding item [22], since the Ti layer is formed by vapor deposition on the Al layer, the thickness of the Ti layer can be easily adjusted to a required thickness. Therefore, waste of the Ti layer material can be eliminated, and the material cost of the Ti layer can be reduced.

  Further, since the intermediate layer is formed by vapor deposition on the Ti layer, the thickness of the intermediate layer can be easily adjusted to a required thickness. Therefore, waste of the material for the intermediate layer can be eliminated, and the material cost for the intermediate layer can be reduced.

  Furthermore, since the Ti layer is formed by vapor deposition on the Al layer and the intermediate layer is formed by vapor deposition on the Ti layer, the base plate that is set when joining by the discharge plasma sintering method The number of can be reduced. As a result, the joining operation can be facilitated.

  In this way, the production cost of the laminated material can be reduced by reducing the material cost of the Ti layer, reducing the material cost of the intermediate layer, reducing the number of production steps of the laminated material, and facilitating the joining work. It can be greatly reduced.

  The previous items [23] to [25] have the same effects as the previous items [3] to [5], respectively.

  In the previous item [26], since the Al layer is formed of pure Al having a purity of 4N or more, the Al layer can be suitably used as a wiring layer.

  The previous item [27] has the same effect as the previous item [1].

  The previous item [28] has the same effect as the previous item [2].

  The previous item [29] has the same effect as the previous item [6].

  The previous item [30] has the same effect as the previous item [10].

  The previous item [31] has the same effect as the previous item [14].

  The previous item [32] has the same effect as the previous item [18].

  The previous item [33] has the same effect as the previous item [22].

  The previous item [34] has the same effect as the previous item [4].

  The preceding item [35] has the same effect as the preceding item [26].

  In the preceding item [36], an insulating substrate having the same effect as any of the preceding items [27] to [35] can be provided.

  In the previous item [37], it is possible to provide a semiconductor module having the same effect as any of the previous items [27] to [35].

FIG. 1 is a front view of a semiconductor module including an insulating substrate manufactured using the laminated material according to the first embodiment of the present invention. FIG. 2 is a cross-sectional view of the insulating substrate. FIG. 3 is a cross-sectional view showing an example of the manufacturing process of the laminated material. FIG. 4 is a cross-sectional view showing a case where predetermined joining is simultaneously performed by a discharge plasma sintering method without using a cylindrical die. FIG. 5 is a cross-sectional view showing a case where predetermined joining is simultaneously performed by a discharge plasma sintering method using a cylindrical die. FIG. 6 is a cross-sectional view showing a case where predetermined joining is simultaneously performed on each of the plurality of stacked bodies without using a cylindrical die. FIG. 7 is a cross-sectional view showing the laminated material according to the second embodiment of the present invention in a state before joining. FIG. 8 is a cross-sectional view illustrating the laminated material according to the third embodiment of the present invention in a state before bonding. FIG. 9 is a cross-sectional view illustrating the laminated material according to the fourth embodiment of the present invention in a state before bonding. FIG. 10 is a cross-sectional view showing the laminated material according to the fifth embodiment of the present invention before joining. FIG. 11: is sectional drawing which shows the laminated material which concerns on 6th Embodiment of this invention in the state before joining.

  Next, several embodiments of the present invention will be described below with reference to the drawings.

  In the following description, for the sake of convenience, the top and bottom of each drawing is referred to as the top and bottom. Moreover, the same code | symbol is attached | subjected to the same member through all drawings in each drawing.

  In FIG. 1, reference numeral 20 denotes a semiconductor module according to the first embodiment of the present invention. The semiconductor module 20 is an IGBT module, a MOSFET module, a thyristor module, a diode module, or the like, and includes a semiconductor element 21, an insulating substrate 15, and a heat dissipation member 17. The insulating substrate 15 is disposed between the semiconductor element 21 and the heat radiating member 17 and plays a role of transmitting heat generated from the semiconductor element 21 to the heat radiating member 17. Therefore, the insulating substrate 15 is required to have both excellent electrical insulation and high thermal conductivity.

  The semiconductor element 21 is an IGBT chip, a MOSFET chip, a thyristor chip, a diode chip, or the like.

  The heat radiating member 17 is an air-cooled or water-cooled heat sink or cooler, and is made of metal, specifically, for example, made of Al or an Al alloy. In the first embodiment, the heat dissipating member 17 is a heat sink having heat dissipating fins, for example.

  As shown in FIG. 2, the insulating substrate 15 is manufactured using the laminated material 1 according to the first embodiment of the present invention. Specifically, the insulating substrate 15 and the ceramic 1 of the first embodiment and the ceramic A layer 10 and a metal base layer 12 are included.

The ceramic layer 10 is formed of a ceramic that functions as an electrical insulating layer in the insulating substrate 15 and is preferably made of AlN, Al 2 O 3 , Si 3 N 4 , Y 2 O 3 , CaO, BN, and BeO. It is formed of one or more ceramics selected from the group. The ceramic layer 10 is formed from a ceramic plate. The thickness of the ceramic layer 10 is, for example, 300 to 1000 μm. Incidentally, the melting point or decomposition point of the ceramic forming the ceramic layer 10 is AlN: 2200 ° C., Al 2 O 3 : 2050 ° C., Si 3 N 4 : 1900 ° C., Y 2 O 3 : 2400 ° C., CaO: 2570 ° C., BN: 3000 ° C., BeO: 2570 ° C. The size of the ceramic layer 10 is preferably set slightly larger than the other layers in order to ensure electrical insulation.

  The metal base layer 12 is disposed between the ceramic layer 10 and the heat radiating member 17 and is intended to alleviate thermal stress. The metal base layer 12 is formed from a metal plate, and is formed of, for example, Al or an Al alloy. The metal base layer 12 is joined to the lower surface side of the ceramic layer 10 in a laminated form by brazing. At the bonding interface between the metal base layer 12 and the ceramic layer 10, a brazing material layer 11 is formed by bonding the metal base layer 12 and the ceramic layer 10. A heat dissipation member 17 is joined to the metal base layer 12 by brazing or the like on the lower surface side of the metal base layer 12.

  Here, specific examples of the thermal stress generated in the laminated material 1 and the insulating substrate 15 are as follows. That is, when the joining of the metal base layer 12 of the insulating substrate 15 and the heat dissipation member 17 is performed by brazing, for example, the temperature of the insulating substrate 15 rises from room temperature to about 600 ° C. during the brazing, and after brazing Return to room temperature. Further, when the semiconductor element 21 is joined to the surface 2a of the Ni layer 2 of the laminated material 1 by soldering, the temperature of the insulating substrate 15 rises from room temperature to about 300 ° C. and returns to room temperature after soldering. Furthermore, during the operation of the semiconductor module 20, the temperature of the semiconductor element 21 rises from room temperature to about 150 to 300 ° C., and returns to room temperature after the operation is stopped. Thermal stress (thermal distortion) is generated in the laminated material 1 and the insulating substrate 15 by such a cooling / heating cycle.

  The laminated material 1 of the first embodiment is bonded to the ceramic layer 10 by brazing on one side of the ceramic layer 10 (the upper surface side of the ceramic layer 10 in the first embodiment), and Ni A layer 2, an intermediate layer 3, a Ti layer 4, an Al layer 5 and a brazing material layer 6 are provided. These layers 2 to 6 are arranged horizontally. And the laminated material 1 is manufactured by integrating these layers 2-6 in the laminated form. Since this laminated material 1 includes the brazing material layer 6, it can also be regarded as a laminated material with a brazing material layer. In the drawing, the brazing filler metal layer is shown by dot hatching for easy distinction from other layers.

  The Ni layer 2 is one in which the semiconductor element 21 is joined to the surface (upper surface) 2a by soldering. The Ni layer 2 is made of Ni or Ni alloy. More specifically, the Ni layer 2 is provided from a Ni plate or a Ni alloy plate.

  The intermediate layer 3 is disposed in a stacked manner on the side opposite to the surface 2a side of the Ni layer 2 (that is, the lower surface side). The Ni layer 2 and the intermediate layer 3 are integrated. The intermediate layer 3 is an Al layer 3a formed of Al or an Al alloy, or a Cu layer 3c formed of Cu or a Cu alloy (see FIG. 3).

  Here, in the present specification, as described above, in order to distinguish the Al layer 3a constituting the intermediate layer 3 from the Al layer 5 arranged on the opposite side of the Ti layer 4 from the arrangement side of the intermediate layer 3, "intermediate Al" is used. Referred to as layer 3a ". Further, the Cu layer 3c constituting the intermediate layer 3 is referred to as an “intermediate Cu layer 3c”.

  Since the melting points of Al and Cu are generally lower than those of Ni and Ti, the intermediate Al layer 3a and the intermediate Cu layer 3c are basically bonded layers for bonding the Ni layer 2 and the Ti layer 4 together. As a role. In the first embodiment, the intermediate layer 3 is provided and formed from an Al plate or an Al alloy plate, or is provided and formed from a Cu plate or a Cu alloy plate. The Ni layer 2 and the intermediate layer 3 are joined and integrated by the discharge plasma sintering method.

  Here, the spark plasma sintering (SPS) method is generally applied to sinter powder or to join members together. In the first embodiment, the members are joined together. Has been applied to join. This discharge plasma sintering method is also called “SPS bonding method”, “Pulsed Current Hot Pressing (PCHP)” or the like.

  The Ti layer 4 is arranged in a laminated form on the side opposite to the Ni layer 2 arrangement side of the intermediate layer 3 (that is, the lower surface side). The intermediate layer 3 and the Ti layer 4 are integrated. The Ti layer 4 is made of Ti or a Ti alloy. In the first embodiment, the Ti layer 4 is provided from a Ti plate or a Ti alloy plate. The intermediate layer 3 and the Ti layer 4 are joined and integrated by the discharge plasma sintering method.

  The Al layer 5 is disposed in a laminated manner on the side opposite to the side where the intermediate layer 3 is disposed of the Ti layer 4 (that is, the lower surface side). The Ti layer 4 and the Al layer 5 are integrated. The Al layer 5 is made of Al or an Al alloy. In the first embodiment, the Al layer 5 is provided and formed from an Al plate or an Al alloy plate. The Ti layer 4 and the Al layer 5 are joined and integrated by the discharge plasma sintering method. In particular, the Al layer 5 functions as a wiring layer of the insulating substrate 15 and has a stress relaxation effect. Therefore, the Al layer 5 is formed of pure aluminum having a purity of 4N or more (that is, a purity of 99.99% by mass or more). good.

  The brazing material layer 6 is used when the laminated material 1 and the ceramic layer 10 are joined by brazing, and is opposite to the side where the Ti layer 4 is disposed of the Al layer 5 of the laminated material 1 (that is, the lower surface side). Are arranged in a stack. The Al layer 5 and the brazing material layer 6 are integrated. The brazing material layer 6 is preferably formed of an Al-based brazing material (eg, a brazing material of an Al—Si based alloy). In the first embodiment, the brazing material layer 6 is provided and formed from an Al-based brazing material plate (eg, a brazing material plate made of an Al—Si based alloy). The Al layer 5 and the brazing filler metal layer 6 are joined and integrated by the discharge plasma sintering method.

  The thickness of the Ni layer 2 is not limited, but within the range of 5 to 100 μm can reliably exhibit the characteristics of the Ni layer 2 and reduce the thermal conductivity of the laminated material 1. This is desirable because it can be prevented. Here, in the first embodiment, as described above, the Ni layer 2 is formed by being provided from a Ni plate or a Ni alloy plate. In this case, the Ni layer has a thickness in the range of 5 to 100 μm. A plate or a Ni alloy plate is preferably used, and in particular, a Ni rolled plate or a Ni alloy rolled plate is preferably used because it is available at a low cost.

  The thickness of the Ti layer 4 is not limited, but within the range of 5 to 100 μm can reliably exhibit the characteristics of the Ti layer 4 and reduce the thermal conductivity of the laminated material 1. This is desirable because it can be prevented. Here, in the first embodiment, as described above, the Ti layer 4 is formed by being provided from a Ti plate or a Ti alloy plate, and in this case, a Ti having a thickness in the range of 5 to 100 μm. A plate or a Ti alloy plate is preferably used, and in particular, a Ti rolled plate or a Ti alloy rolled plate is preferably used because it can be obtained at a low cost.

  The thickness of the Al layer 5 is not limited, but is preferably as thick as possible in order to make the Al layer 5 function as a wiring layer and a stress relaxation layer of the insulating substrate 15 reliably. However, in the first embodiment, since the Al layer 5 is not bonded to the Ti layer 4 by clad bonding, but is bonded by the discharge plasma sintering method, a thick Al layer having a thickness of 0.1 to 2.0 mm is used. 5 can be bonded to the Ti layer 4. Therefore, the Al layer 5 can function reliably as a wiring layer and a stress relaxation layer. Here, in the first embodiment, as described above, the Al layer 5 is provided and formed from an Al plate or an Al alloy plate. In this case, the thickness is 0.1 to 2.0 mm. An Al plate or an Al alloy plate within the range is preferably used, and in particular, an Al rolled plate or an Al alloy rolled plate is preferably used because it can be obtained at a low cost.

  When the intermediate layer 3 is the intermediate Al layer 3a, the thickness of the intermediate Al layer 3a is not limited. Here, when the Ni layer 2 and the intermediate Al layer 3a are bonded by the discharge plasma sintering method, Ni in the Ni layer 2 enters the intermediate Al layer 3a at the bonding interface between the Ni layer 2 and the intermediate Al layer 3a. By diffusion, an alloy layer formed by alloying Ni and Al of the intermediate Al layer 3a is formed. This alloy layer itself is fragile and weak in strength. However, since the Ti layer 4 is a low thermal expansion layer, when the intermediate Al layer 3a is joined to the Ti layer 4, the laminated structure of the laminated material 1 becomes an inclined structure having a high stress dispersion effect. Thermal stress acting on the bonding interface between the layer 2 and the intermediate Al layer 3a is relaxed. Thereby, even if the intermediate layer 3 is the intermediate Al layer 3a, the occurrence of cracks and peeling at the bonding interface between the Ni layer 2 and the intermediate Al layer 3a is suppressed. Furthermore, in order to make this alloy layer more difficult to form, it is desirable that the thickness of the intermediate Al layer 3a be as thin as possible. Here, in the first embodiment, as described above, the intermediate Al layer 3a is provided and formed from an Al plate or an Al alloy plate. In this case, the thickness is in the range of 5 to 12 μm. An Al plate or an Al alloy plate is preferably used, and in particular, an Al rolled plate or an Al alloy rolled plate is preferably used because it is available at a low cost.

  When the intermediate layer 3 is the intermediate Cu layer 3c, the thickness of the intermediate Cu layer 3c is not limited. Here, in the first embodiment, as described above, the intermediate Cu layer 3c is formed by being provided from a Cu plate or a Cu alloy plate. In this case, the thickness is in the range of 5 to 200 μm. A Cu plate or a Cu alloy plate is preferably used, and in particular, a Cu rolled plate or a Cu alloy rolled plate is preferably used because it is available at a low cost.

  Although the thickness of the brazing material layer 6 is not limited, in order to ensure that the laminated material 1 and the ceramic layer 10 can be bonded together by brazing, the thermal conductivity of the laminated material 1 is further reduced. In order to prevent this, it is particularly desirable to set it within the range of 10 to 70 μm.

  Next, an example of a method for manufacturing the laminated material 1 and the insulating substrate 15 according to the first embodiment will be described below with reference to FIGS.

  As shown in FIG. 3, the Ni layer 2, the intermediate layer 3, the Ti layer 4, the Al layer 5, and the brazing material layer 6 are prepared. The Ni layer 2 is formed from a Ni plate or a Ni alloy plate. The intermediate layer 3 is formed from an Al plate or an Al alloy plate, or formed from a Cu plate or a Cu alloy plate. The Ti layer 4 is formed from a Ti plate or a Ti alloy plate. The Al layer 5 is formed from an Al plate or an Al alloy plate. The brazing material layer 6 is formed from a brazing material plate.

  Subsequently, these layers 2-6 are laminated | stacked one by one, and the laminated body 8 is formed (refer FIG. 4). And these layers 2-6 in this laminated body 8 are integrated so that mutually adjacent layers may be in a fixed state. This process is called “integration process”.

  In the first embodiment, in the integration step, the bonding between the Ni layer 2 and the intermediate layer 3, the bonding between the intermediate layer 3 and the Ti layer 4, the bonding between the Ti layer 4 and the Al layer 5, and the Al The joining of the layer 5 and the brazing material layer 6 is simultaneously performed by the discharge plasma sintering method.

  Such joining by the discharge plasma sintering method is performed by the joining method shown in FIG.

  The joining method shown in FIG. 4 will be described as follows.

  The discharge plasma sintering apparatus 30 includes a pair of upper and lower punches 32 and 32. Each punch 32 has conductivity, and is made of, for example, graphite. An electrode 33 is electrically connected to the base of each punch 32. Both punches 32, 32 are formed in the stacking direction of the stacked body 8 formed by sequentially stacking the Ni layer 2, the intermediate layer 3, the Ti layer 4, the Al layer 5, and the brazing filler metal layer 6 (that is, the thickness of the stacked body 8. Are arranged on both sides of the direction). The discharge plasma sintering cylindrical die is not disposed around the laminate 8, that is, the periphery of the laminate 8 is not surrounded by the cylindrical die. The laminate 8 is sandwiched between both punches 32 and 32. And, for example, in a vacuum atmosphere of 1 to 10 Pa or in an inert gas atmosphere such as nitrogen or argon, while pressing the laminated body 8 in the laminating direction with both of the punches 32 and 32, between the two punches 32 and 32. The laminated body 8 is heated by applying a pulse current to the adjacent layers, whereby adjacent layers are simultaneously bonded together in a fixed state. As a result, the desired laminated material 1 is obtained. Specific examples of the bonding conditions in this case include a heating temperature of 500 to 570 ° C., a holding time of the heating temperature of 5 to 40 min, a rate of temperature increase from room temperature to the heating temperature of 15 to 100 ° C./min, and a laminate 8 The applied pressure is 5 to 20 MPa.

  Although not shown in the drawing, the surface of each outermost layer (ie, the Ni layer 2 and the brazing filler metal layer 6) of the laminate 8 is made relatively larger than the pressing surface of each punch 32, and Each punch is formed on the surface of each outermost layer 2, 6 of the laminate 8 so that the outer peripheral edge of the surface of the outermost layer 2, 6 protrudes over the entire circumference of the punch 32 to the outside of the pressing surface of the punch 32. It is desirable to press the pressure surface of 32 and press the laminated body 8 with both punches 32 and 32 in this state. By doing so, accidental discharge and electrical short circuit can be prevented, and good bonding can be performed stably.

  The insulating substrate 15 is manufactured using the laminated material 1. The production method is exemplified as follows.

  As shown in FIG. 3, this laminated material 1, the ceramic layer 10, and the metal base layer 12 are joined by brazing. Thereby, the insulating substrate 15 is obtained. The brazing material layer 11 disposed between the ceramic layer 10 and the metal base layer 12 is a brazing material for joining the two layers 10 and 12 together. Here, since the laminated material 1 includes the brazing material layer 6, the laminated material 1 and the ceramic layer 10 can be easily joined by using the brazing material layer 6 as a brazing material. In the present invention, the laminated material 1, the ceramic layer 10, and the metal base layer 12 may be joined simultaneously by brazing in the furnace.

  In the insulating substrate 15 thus obtained, as shown in FIGS. 1 and 2, the heat radiating member 17 is joined to the lower surface of the metal base layer 12 by brazing or the like, and the semiconductor element 21 is formed on the surface 2 a of the Ni layer 2. Joined by soldering. Thereby, the semiconductor module 20 is obtained.

  The laminated material 1 and the manufacturing method thereof according to the first embodiment have the following advantages.

  Since the laminated material 1 includes the Ni layer 2, the solderability is good. Therefore, the semiconductor element 21 can be reliably bonded to the surface 2a of the Ni layer 2 by soldering.

  Furthermore, since the Ti layer 4 is disposed between the Ni layer 2 and the Al layer 5, the following effects are obtained. That is, for example, if the Ni layer 2 and the Al layer 5 are directly joined without disposing the Ti layer 4 between the Ni layer 2 and the Al layer 5, the joint interface between the Ni layer 2 and the Al layer 5 is formed. A weak and weak alloy layer is formed, and as a result, the alloy layer is liable to be cracked or peeled off due to thermal stress (thermal strain) generated with the cooling cycle. On the other hand, in this laminated material 1, since the Ti layer 4 is disposed between the Ni layer 2 and the Al layer 5, such a fragile alloy layer is not formed. Thereby, the generation | occurrence | production of the crack and peeling in the joining interface of the laminated material 1 by a thermal stress can be prevented, and also generation | occurrence | production of the deformation | transformation (unevenness | corrugation) of the surface 2a of the Ni layer 2 can be prevented.

  In addition, the thermal stress can be relaxed in the Al layer 5, and therefore, cracking of the ceramic layer 10 can be prevented when the laminated material 1 and the ceramic layer 10 of the insulating substrate 15 are joined. As a result, it is possible to obtain the insulating substrate 15 with high cooling durability.

  Furthermore, since the melting point of Al or Cu is generally lower than that of Ni and Ti, the intermediate layer 3 composed of the intermediate Al layer 3a or the intermediate Cu layer 3c is disposed between the Ni layer 2 and the Ti layer 4. As a result, the joining of the Ni layer 2 and the intermediate layer 3, the joining of the intermediate layer 3 and the Ti layer 4, and the joining of the Ti layer 4 and the Al layer 5 can be performed simultaneously by the discharge plasma sintering method. . Thereby, the number of manufacturing steps of the laminated material 1 can be reduced, and the manufacturing cost of the laminated material 1 can be reduced. That is, if the intermediate layer 3 is not disposed between the Ni layer 2 and the Ti layer 4, the eutectic temperature of Ni and Ti is 942 ° C., which is higher than the melting point of Al 660 ° C. The joining of the Ni layer 2 and the Ti layer 4 and the joining of the Ti layer 4 and the Al layer 5 cannot be performed simultaneously by the discharge plasma sintering method. Therefore, in this case, the Ni layer 2 and the Ti layer 4 are first bonded at a temperature higher than the melting point of Al (for example, 750 ° C.), and then the bonding between the Ti layer 4 and the Al layer 5 is lower than the melting point of Al. It is necessary to perform bonding in two steps of performing at a temperature (for example, 530 ° C.). On the other hand, by disposing the intermediate layer 3 made of the intermediate Al layer 3a or the intermediate Cu layer 3c between the Ni layer 2 and the Ti layer 4 as in the first embodiment, these junctions are made to discharge plasma. It can be performed simultaneously by a sintering method.

  Further, since the laminated material 1 includes the brazing material layer 6, the brazing material layer 6 is used as a brazing material when the laminated material 1 is joined to a predetermined layer (eg, the ceramic layer 10) of the insulating substrate 15. be able to. Therefore, the laminated material 1 and the predetermined layer of the insulating substrate 15 can be easily joined.

  In addition, when the Al layer 5 is formed of pure Al having a purity of 4N or more, the Al layer 5 can be suitably used as a wiring layer.

  The joining method shown in FIG. 5 will be described as follows.

  A cylindrical die 31 for discharge plasma sintering is disposed around the laminate 8 of the Ni layer 2, the intermediate layer 3, the Ti layer 4, the Al layer 5, and the brazing material layer 6, that is, around the laminate 8. Is surrounded by a cylindrical die 31. More specifically, the die 31 has a cylindrical shape having conductivity, and is made of, for example, graphite. And, for example, in a vacuum atmosphere of 1 to 10 Pa or in an inert gas atmosphere such as nitrogen or argon, while pressing the laminated body 8 in the laminating direction with both of the punches 32 and 32, between the two punches 32 and 32. The laminated body 8 is heated by applying a pulse current to the adjacent layers, whereby adjacent layers are simultaneously bonded together in a fixed state. As a result, the desired laminated material 1 is obtained.

  The joining conditions applied to this joining are the same as the joining conditions shown in FIG.

  In this joining method, joining by the discharge plasma sintering method is performed in a state in which the periphery of the laminate 8 is surrounded by the die 31, so that energization between the punches 32, 32 can be ensured reliably and stable. Temperature control can be performed. Thereby, joining can be performed reliably.

  The joining method shown in FIG. 6 will be described as follows.

  A plurality of laminates 8 of Ni layer 2, intermediate layer 3, Ti layer 4, Al layer 5 and brazing filler metal layer 6 are prepared. In the figure, the number of the laminated bodies 8 prepared is three. In the present invention, the number of the stacked bodies 8 is not limited to three, but may be, for example, 2 to 40 or more than 40.

  Next, a plurality of laminated bodies 8 are laminated between the laminated bodies 8 and 8 that overlap each other via a conductive release plate 35 as a conductive release member. That is, the plurality of stacked bodies 8 are stacked such that the conductive release plate 35 is interposed between the two stacked bodies 8 and 8 that overlap each other. The release plate 35 serves to prevent the laminated bodies 8 and 8 that overlap each other from being joined together, and is not joined to the laminated body 8. The release plate 35 is desirably a plate having electrical conductivity and heat resistance that does not melt at the time of joining. For example, the release plate 35 is made of a carbon plate (including a graphite plate and a sheet). Next, the plurality of stacked bodies 8 are collectively sandwiched between the punches 32 and 32 in the stacking direction. For example, in a vacuum atmosphere of 1 to 10 Pa, or in an inert gas atmosphere such as nitrogen or argon, both the punches 32 and 32 press the plurality of laminated bodies 8 in the laminating direction at the same time. By applying a pulse current between the punches 32 and 32, the plurality of stacked bodies 8 are heated together, whereby adjacent layers in each stacked body 8 are simultaneously bonded in a fixed state. As a result, a plurality of desired laminated materials 1 are obtained.

  The joining conditions applied to this joining are the same as the joining conditions shown in FIG.

  In this joining method, joining by the discharge plasma sintering method is simultaneously performed on each laminated body 8, so that the laminated material 1 can be manufactured in large quantities. Thereby, the manufacturing cost of the laminated material 1 can be reduced.

  In the present invention, when joining is performed by the joining method shown in FIG. 6, joining is performed by the discharge plasma sintering method in a state where the cylindrical dies 31 shown in FIG. 5 are arranged around the plurality of stacked bodies 8. You can go.

  FIG. 7 is a diagram illustrating a method for manufacturing the laminated material 1 according to the second embodiment of the present invention. The second embodiment will be described below with a focus on differences from the first embodiment.

  In the second embodiment, the Ni layer 2 is formed from a Ni plate or a Ni alloy plate. The intermediate layer 3 is formed by vapor deposition on the Ni layer 2 (more specifically, the lower surface of the Ni layer 2) by a predetermined vapor deposition method, that is, a vapor deposition film. The Ti layer 4 is formed from a Ti plate or a Ti alloy plate. The Al layer 5 is formed from an Al plate or an Al alloy plate. The brazing material layer 6 is formed from a brazing material plate.

  The vapor deposition method used for forming the intermediate layer 3 is preferably a PVD (Physical Vapor Deposition) method. As this PVD method, a vacuum deposition method, an ion plating method, a sputtering method, or the like can be applied. In the case where the intermediate layer 3 (that is, the intermediate Al layer 3a or the intermediate Cu layer 3c) is formed by vapor deposition by the PVD method, the thickness of the intermediate layer 3 is not limited, but is 30 to 2000 nm. It is particularly desirable to be within range.

  In the second embodiment, in the integration step, the bonding between the intermediate layer 3 and the Ti layer 4, the bonding between the Ti layer 4 and the Al layer 5, and the bonding between the Al layer 5 and the brazing material layer 6 are performed. Simultaneously by the discharge plasma sintering method.

  Such joining by the discharge plasma sintering method is performed by the joining method shown in FIG.

  In the second embodiment, since the intermediate layer 3 is formed by vapor deposition on the Ni layer 2 by the PVD method, the thickness of the intermediate layer 3 can be easily adjusted to a required thickness. Can do. Therefore, waste of the material of the intermediate layer 3 can be omitted, and the material cost of the intermediate layer 3 can be reduced.

  Furthermore, the joining of the intermediate layer 3 and the Ti layer 4, the joining of the Ti layer 4 and the Al layer 5, and the joining of the Al layer 5 and the brazing filler metal layer 6 can be performed simultaneously by the discharge plasma sintering method. Thereby, the number of manufacturing steps of the laminated material 1 can be reduced.

  Furthermore, since the intermediate layer 3 is formed by vapor deposition on the Ni layer 2 by the PVD method, the number of base plates to be set when joining by the discharge plasma sintering method can be reduced. That is, in the first embodiment, the number of base plates to be set is five (Ni layer 2, intermediate layer 3, Ti layer 4, Al layer 5, brazing material layer 6), but in the second embodiment, There are four sheets (Ni layer 2 + intermediate layer 3, Ti layer 4, Al layer 5, brazing material layer 6), and the number of base plates to be set is reduced from five to four. As a result, the joining operation can be facilitated.

  Thus, the manufacturing cost of the laminated material 1 can be greatly reduced by reducing the material cost of the intermediate layer 3, reducing the number of manufacturing steps of the laminated material 1, and facilitating the joining work. it can.

  Further, since the laminated material 1 includes the brazing material layer 6, the brazing material layer 6 is used as a brazing material when the laminated material 1 is joined to a predetermined layer (eg, the ceramic layer 10) of the insulating substrate 15. be able to. Therefore, the laminated material 1 and the predetermined layer of the insulating substrate 15 can be easily joined.

  FIG. 8 is a diagram illustrating a method for manufacturing the laminated material 1 according to the third embodiment of the present invention. The third embodiment will be described below with a focus on differences from the first embodiment.

  In the third embodiment, the Ni layer 2 is formed from a Ni plate or a Ni alloy plate. The intermediate layer 3 is formed by vapor deposition on the Ni layer 2 (more specifically, the lower surface of the Ni layer 2) by the PVD method, that is, formed from a vapor deposition film. The Ti layer 4 is formed by vapor deposition on the intermediate layer 3 by the PVD method. The Al layer 5 is formed from an Al plate or an Al alloy plate. The brazing material layer 6 is formed from a brazing material plate.

  As a PVD method used for forming the intermediate layer 3 and the Ti layer 4, a vacuum deposition method, an ion plating method, a sputtering method, or the like can be applied. In this case, the thickness of the intermediate layer 3 is not limited, but is particularly preferably in the range of 30 to 2000 nm. Further, the thickness of the Ti layer 4 is not limited, but it is particularly desirable to be within a range of 30 to 2000 nm.

  In the third embodiment, in the integration step, the joining of the Ti layer 4 and the Al layer 5 and the joining of the Al layer 5 and the brazing filler metal layer 6 are simultaneously performed by the discharge plasma sintering method.

  Such joining by the discharge plasma sintering method is performed by the joining method shown in FIG.

  In the third embodiment, since the intermediate layer 3 is formed by vapor deposition on the Ni layer 2 by the PVD method, the thickness of the intermediate layer 3 can be easily adjusted to a required thickness. Can do. Therefore, waste of the material of the intermediate layer 3 can be omitted, and the material cost of the intermediate layer 3 can be reduced.

  Further, since the Ti layer 4 is formed by vapor deposition on the intermediate layer 3 by the PVD method, the thickness of the Ti layer 4 can be easily adjusted to a required thickness. Therefore, waste of the material of the Ti layer 4 can be eliminated, and the material cost of the Ti layer 4 can be reduced.

  Furthermore, the joining of the Ti layer 4 and the Al layer 5 and the joining of the Al layer 5 and the brazing material layer 6 can be performed simultaneously by the discharge plasma sintering method. Reduction can be achieved.

  Furthermore, since the intermediate layer 3 is formed by vapor deposition on the Ni layer 2 by the PVD method and the Ti layer 4 is formed by vapor deposition on the intermediate layer 3 by the PVD method, the discharge plasma sintering method is used. Thus, the number of base plates to be set when joining can be reduced. That is, in the first embodiment, the number of base plates to be set is five (Ni layer 2, intermediate layer 3, Ti layer 4, Al layer 5, brazing material layer 6), but in the third embodiment, There are three sheets (Ni layer 2 + intermediate layer 3 + Ti layer 4, Al layer 5, brazing material layer 6), and the number of base plates to be set is reduced from five to three. Thereby, the further simplification of joining work can be achieved.

  Thus, the reduction of the material cost of the intermediate layer 3, the reduction of the material cost of the Ti layer 4, the reduction of the number of manufacturing steps of the laminate 1, and the facilitation of the joining work can be achieved. The manufacturing cost can be greatly reduced.

  Further, since the laminated material 1 includes the brazing material layer 6, the brazing material layer 6 is used as a brazing material when the laminated material 1 is joined to a predetermined layer (eg, the ceramic layer 10) of the insulating substrate 15. be able to. Therefore, the laminated material 1 and the predetermined layer of the insulating substrate 15 can be easily joined.

  FIG. 9 is a diagram illustrating a method for manufacturing the laminated material 1 according to the fourth embodiment of the present invention. The fourth embodiment will be described below with a focus on differences from the first embodiment.

  In the fourth embodiment, the Ni layer 2 is formed from a Ni plate or a Ni alloy plate. The intermediate layer 3 is formed by vapor deposition on the Ti layer 4 (more specifically, the upper surface of the Ti layer 4) by the PVD method. The Ti layer 4 is formed from a Ti plate or a Ti alloy plate. The Al layer 5 is formed from an Al plate or an Al alloy plate. The brazing material layer 6 is formed from a brazing material plate.

  As the PVD method used for forming the intermediate layer 3, a vacuum deposition method, an ion plating method, a sputtering method, or the like is applicable. In this case, the thickness of the intermediate layer 3 is not limited, but is particularly preferably in the range of 30 to 2000 nm.

  In the fourth embodiment, in the integration step, the bonding between the Ni layer 2 and the intermediate layer 3, the bonding between the Ti layer 4 and the Al layer 5, and the bonding between the Al layer 5 and the brazing material layer 6 are performed. Simultaneously by the discharge plasma sintering method.

  Such joining by the discharge plasma sintering method is performed by the joining method shown in FIG.

  In the fourth embodiment, since the intermediate layer 3 is formed by vapor deposition on the Ti layer 4 by the PVD method, the thickness of the intermediate layer 3 can be easily adjusted to a required thickness. Can do. Therefore, waste of the material of the intermediate layer 3 can be omitted, and the material cost of the intermediate layer 3 can be reduced.

  Furthermore, the joining of the Ni layer 2 and the intermediate layer 3, the joining of the Ti layer 4 and the Al layer 5, and the joining of the Al layer 5 and the brazing filler metal layer 6 can be performed simultaneously by the discharge plasma sintering method. As a result, the number of manufacturing steps of the laminated material can be reduced.

  Furthermore, since the intermediate layer 3 is formed by vapor deposition on the Ti layer 4 by the PVD method, the number of base plates to be set when joining by the discharge plasma sintering method can be reduced. That is, in the first embodiment, the number of base plates to be set is five (Ni layer 2, intermediate layer 3, Ti layer 4, Al layer 5, brazing material layer 6), but in the fourth embodiment, There are four sheets (Ni layer 2, intermediate layer 3 + Ti layer 4, Al layer 5, brazing material layer 6), and the number of base plates to be set is reduced from five to four. As a result, the joining operation can be facilitated.

  Thus, the manufacturing cost of the laminated material 1 can be greatly reduced by reducing the material cost of the intermediate layer 3, reducing the number of manufacturing steps of the laminated material 1, and facilitating the joining work. it can.

  Further, since the laminated material 1 includes the brazing material layer 6, the brazing material layer 6 is used as a brazing material when the laminated material 1 is joined to a predetermined layer (eg, the ceramic layer 10) of the insulating substrate 15. be able to. Therefore, the laminated material 1 and the predetermined layer of the insulating substrate 15 can be easily joined.

  FIG. 10 is a diagram illustrating a method for manufacturing the laminated material 1 according to the fifth embodiment of the present invention. The fifth embodiment will be described below with a focus on differences from the first embodiment.

  In the fifth embodiment, the Ni layer 2 is formed from a Ni plate or a Ni alloy plate. The intermediate layer 3 is formed from an Al plate or an Al alloy plate, or formed from a Cu plate or a Cu alloy plate. The Ti layer 4 is formed by vapor deposition on the Al layer 5 (more specifically, the upper surface of the Al layer 5) by the PVD method. The Al layer 5 is formed from an Al plate or an Al alloy plate. The brazing material layer 6 is formed from a brazing material plate.

  As the PVD method used to form the Ti layer 4, a vacuum deposition method, an ion plating method, a sputtering method, or the like can be applied. In this case, the thickness of the Ti layer 4 is not limited, but is preferably in the range of 30 to 2000 nm.

  In the fifth embodiment, in the integration step, the bonding between the Ni layer 2 and the intermediate layer 3, the bonding between the intermediate layer 3 and the Ti layer 4, and the bonding between the Al layer 5 and the brazing material layer 6 are performed. Simultaneously by the discharge plasma sintering method.

  Such joining by the discharge plasma sintering method is performed by the joining method shown in FIG.

  In the fifth embodiment, since the Ti layer 4 is formed by being deposited on the Al layer 5 by the PVD method, the thickness of the Ti layer 4 can be easily adjusted to the required thickness. Can do. Therefore, waste of the material of the Ti layer 4 can be eliminated, and the material cost of the Ti layer 4 can be reduced.

  Furthermore, the joining of the Ni layer 2 and the intermediate layer 3, the joining of the intermediate layer 3 and the Ti layer 4, and the joining of the Al layer 5 and the brazing filler metal layer 6 can be performed simultaneously by the discharge plasma sintering method. Thereby, the number of manufacturing steps of the laminated material 1 can be reduced.

  Furthermore, since the Ti layer 4 is formed by being deposited on the Al layer 5 by the PVD method, the number of base plates to be set when joining by the discharge plasma sintering method can be reduced. That is, in the first embodiment, the number of base plates to be set is 5 (Ni layer 2, intermediate layer 3, Ti layer 4, Al layer 5, brazing material layer 6), but in the fifth embodiment, There are four sheets (Ni layer 2, intermediate layer 3, Ti layer 4 + Al layer 5, brazing material layer 6), and the number of base plates to be set is reduced from five to four. As a result, the joining operation can be facilitated.

  As described above, the manufacturing cost of the laminated material 1 can be greatly reduced by reducing the material cost of the Ti layer 4, reducing the number of manufacturing steps of the laminated material 1, and facilitating the joining work. it can.

  Further, since the laminated material 1 includes the brazing material layer 6, the brazing material layer 6 is used as a brazing material when the laminated material 1 is joined to a predetermined layer (eg, the ceramic layer 10) of the insulating substrate 15. be able to. Therefore, the laminated material 1 and the predetermined layer of the insulating substrate 15 can be easily joined.

  FIG. 11 is a diagram illustrating a method for manufacturing the laminated material 1 according to the sixth embodiment of the present invention. The sixth embodiment will be described below with a focus on differences from the first embodiment.

  In the sixth embodiment, the Ni layer 2 is formed from a Ni plate or a Ni alloy plate. The intermediate layer 3 is formed by vapor deposition on the Ti layer 4 (more specifically, the upper surface of the Ti layer 4) by the PVD method. The Ti layer 4 is formed by vapor deposition on the Al layer 5 (more specifically, the upper surface of the Al layer 5) by the PVD method. The Al layer 5 is formed from an Al plate or an Al alloy plate. The brazing material layer 6 is formed from a brazing material plate.

  As a PVD method used for forming the intermediate layer 3 and the Ti layer 4, a vacuum deposition method, an ion plating method, a sputtering method, or the like can be applied. In this case, the thickness of the intermediate layer 3 is not limited, but is particularly preferably in the range of 30 to 2000 nm. Further, the thickness of the Ti layer 4 is not limited, but it is particularly desirable to be within a range of 30 to 2000 nm.

  In the sixth embodiment, in the integration step, the joining of the Ni layer 2 and the intermediate layer 3 and the joining of the Al layer 5 and the brazing filler metal layer 6 are simultaneously performed by the discharge plasma sintering method.

  Such joining by the discharge plasma sintering method is performed by the joining method shown in FIG.

  In the sixth embodiment, the Ti layer 4 is formed by being deposited on the Al layer 5 by the PVD method, so that the thickness of the Ti layer 4 can be easily adjusted to the required thickness. Can do. Therefore, waste of the material of the Ti layer 4 can be eliminated, and the material cost of the Ti layer 4 can be reduced.

  Furthermore, since the intermediate layer 3 is formed by being deposited on the Ti layer 4 by the PVD method, the thickness of the intermediate layer 3 can be easily adjusted to a required thickness. Therefore, waste of the material of the intermediate layer 3 can be omitted, and the material cost of the intermediate layer 3 can be reduced.

  Furthermore, the joining of the Ni layer 2 and the intermediate layer 3 and the joining of the Al layer 5 and the brazing filler metal layer 6 can be performed simultaneously by the discharge plasma sintering method. Reduction can be achieved.

  Further, since the intermediate layer 3 is formed by vapor deposition on the Ti layer 4 by the PVD method and the Ti layer 4 is formed by vapor deposition on the Al layer 5 by the PVD method, the discharge plasma sintering method is used. Thus, the number of base plates to be set when joining can be reduced. That is, in the first embodiment, the number of base plates to be set is five (Ni layer 2, intermediate layer 3, Ti layer 4, Al layer 5, brazing material layer 6), but in the sixth embodiment, There are three sheets (Ni layer 2, intermediate layer 3 + Ti layer 4 + Al layer 5, brazing material layer 6), and the number of base plates to be set is reduced from five to three. Thereby, the further simplification of joining work can be achieved.

  Thus, the reduction of the material cost of the intermediate layer 3, the reduction of the material cost of the Ti layer 4, the reduction of the number of manufacturing steps of the laminate 1, and the facilitation of the joining work can be achieved. The manufacturing cost can be greatly reduced.

  Further, since the laminated material 1 includes the brazing material layer 6, the brazing material layer 6 is used as a brazing material when the laminated material 1 is joined to a predetermined layer (eg, the ceramic layer 10) of the insulating substrate 15. be able to. Therefore, the laminated material 1 and the predetermined layer of the insulating substrate 15 can be easily joined.

  Although several embodiments of the present invention have been described above, the present invention is not limited to these embodiments, and various modifications can be made without departing from the scope of the present invention.

  The present invention may be configured by combining the above-described embodiments.

  In the present invention, it is desirable that the laminated material 1 is provided with the brazing material layer 6 as shown in the above embodiment, but it is not always necessary to provide the brazing material layer 6. The brazing material layer 6 need not be joined to the Al layer 5.

  Some specific examples of the present invention are shown below. However, the present invention is not limited to these examples.

<Example 1>
In the present Example 1, the laminated material 1 was manufactured according to the manufacturing method of the laminated material 1 of the said 1st Embodiment shown in FIG. However, the laminated material 1 does not include the brazing material layer 6.

  As the Ni layer 2, the intermediate Al layer 3a, the Ti layer 4 and the Al layer 5, the following disk-shaped plates were prepared.

Ni layer 2: Pure Ni plate having a diameter of 160 mm × 0.02 mm in thickness Intermediate Al layer 3a: Al plate having a diameter of 160 mm × 0.012 mm in thickness Ti layer 4: Pure Ti plate having a diameter of 160 mm × thickness of 0.01 mm Al layer 5: Pure Al plate having a diameter of 160 mm and a thickness of 0.6 mm.

  The purity of the Ni plate forming the Ni layer 2 is JIS (Japanese Industrial Standard). The material of the Al plate forming the intermediate Al layer 3a is A1100. The purity of the Ti plate forming the Ti layer 4 is JIS1 type. The purity of the Al plate forming the Al layer 5 is 4N (that is, 99.99% by mass).

  Next, in the integration step, as shown in FIG. 4, the bonding between the Ni layer 2 and the intermediate Al layer 3a, the bonding between the intermediate Al layer 3a and the Ti layer 4, and the bonding between the Ti layer 4 and the Al layer 5 are performed. Were simultaneously performed by the discharge plasma sintering method. That is, a pair of graphite punches 32 of a discharge plasma sintering apparatus 30 in a stacking direction in a stacking direction of a stacked body 8 of the Ni layer 2, the intermediate Al layer 3a, and the Al layer 5 of the Ti layer 4 in a 3 Pa vacuum atmosphere, While being pressurized with 32, the laminated body 8 was heated by passing a pulse current between both the punches 32, 32, whereby the layers adjacent to each other were simultaneously joined in a fixed state. Thereby, the laminated material 1 was obtained. It was confirmed that each bonding interface of the laminated material 1 was in a diffusion bonding state.

  The diameter of each punch 32 used in this integration step is 150 mm. Also, the joining conditions applied in this integration step are a heating temperature of 530 ° C., a heating temperature holding time of 10 min, a temperature rising rate of 35 ° C./min, and a pressing force of 10 MPa.

  Next, the laminated material 1 obtained in this way is cut into a size of 30 mm long × 30 mm wide, and then laminated material 1, brazing material layer 6, ceramic layer 10, brazing material layer 11, metal base layer 12, Were simultaneously joined in a laminated form by brazing in the furnace. This process is called “brazing process”. Thereby, an insulating substrate 15 was obtained.

In this brazing process, an AlN plate (length 30 mm × width 30 mm × thickness 1 mm) as the ceramic layer 10 and a brazing material plate of Al-8 mass% Si as the brazing material layers 6 and 11 (length 30 mm × width 30 mm × And a pure Al plate having a purity of 4N (length 30 mm × width 30 mm × thickness 0.6 mm) was used as the metal base layer 12. The brazing conditions applied in the brazing step are a heating temperature of 600 ° C., a heating temperature holding time of 15 min, and an applied load of 6 g / cm 2 .

  Subsequently, when the thermal cycle test at −40 to 125 ° C. was repeated 1000 times for the insulating substrate 15 thus obtained, cracking and peeling at each bonding interface of the insulating substrate 15 and the Ni layer 2 of the insulating substrate 15 were obtained. No deformation (unevenness) of the surface 2a occurred.

<Example 2>
In the present Example 2, the laminated material 1 was manufactured according to the manufacturing method of the laminated material 1 of the said 1st Embodiment shown in FIG.

  As the Ni layer 2, the intermediate Al layer 3a, the Ti layer 4, the Al layer 5, and the brazing material layer 6, the following disk-shaped plates were prepared.

Ni layer 2: Pure Ni plate having a diameter of 160 mm × 0.02 mm in thickness Intermediate Al layer 3a: Al plate having a diameter of 160 mm × 0.012 mm in thickness Ti layer 4: Pure Ti plate having a diameter of 160 mm × thickness of 0.01 mm Al layer 5: Pure Al plate having a diameter of 160 mm and a thickness of 0.6 mm Brazing material layer 6: Brazing material plate having a diameter of 160 mm and a thickness of 0.04 mm.

  The purity of the Ni plate forming the Ni layer 2 is JIS1 type. The material of the Al plate forming the intermediate Al layer 3a is A1100. The purity of the Ti plate forming the Ti layer 4 is JIS1 type. The purity of the Al plate forming the Al layer 5 is 4N. The composition of the brazing material plate forming the brazing material layer 6 is Al-8 mass% Si.

  Next, in the integration step, as shown in FIG. 4, the bonding between the Ni layer 2 and the intermediate Al layer 3a, the bonding between the intermediate Al layer 3a and the Ti layer 4, and the bonding between the Ti layer 4 and the Al layer 5 are performed. And joining of the Al layer 5 and the brazing filler metal layer 6 was simultaneously performed by the discharge plasma sintering method. Thereby, the laminated material 1 was obtained. It was confirmed that each bonding interface of the laminated material 1 was in a diffusion bonding state.

  The diameter of each punch 32 used in this integration step is 150 mm. Also, the joining conditions applied in this integration step are a heating temperature of 530 ° C., a heating temperature holding time of 10 min, a temperature rising rate of 35 ° C./min, and a pressing force of 10 MPa.

  Next, the laminated material 1 thus obtained is cut into a size of 30 mm in length × 30 mm in width, and then the laminated material 1, the ceramic layer 10, the brazing material layer 11, and the metal base layer 12 are brazed in the furnace. Joined together in a laminated form [brazing process]. Thereby, an insulating substrate 15 was obtained.

In this brazing process, an AlN plate (length 30 mm × width 30 mm × thickness 1 mm) is used as the ceramic layer 10, and a brazing material plate of Al-8 mass% Si (length 30 mm × width 30 mm × thickness 0) is used as the brazing material layer 11. .04 mm) and a pure Al plate having a purity of 4N (length 30 mm × width 30 mm × thickness 0.6 mm) was used as the metal base layer 12. The brazing conditions applied in the brazing step are a heating temperature of 600 ° C., a heating temperature holding time of 15 min, and an applied load of 6 g / cm 2 .

  Subsequently, when the thermal cycle test at −40 to 125 ° C. was repeated 1000 times for the insulating substrate 15 thus obtained, cracking and peeling at each bonding interface of the insulating substrate 15 and the Ni layer 2 of the insulating substrate 15 were obtained. No deformation of the surface 2a occurred.

<Example 3>
In Example 3, the laminated material 1 was produced according to the method for producing the laminated material 1 of the first embodiment shown in FIG.

  As the Ni layer 2, the intermediate Cu layer 3c, the Ti layer 4, the Al layer 5, and the brazing material layer 6, the following disk-shaped plates were prepared.

Ni layer 2: Pure Ni plate having a diameter of 160 mm × 0.02 mm in thickness Intermediate Cu layer 3c: Cu plate having a diameter of 160 mm × thickness of 0.01 mm Ti layer 4: Pure Ti plate having a diameter of 160 mm × thickness of 0.01 mm Al layer 5: Pure Al plate having a diameter of 160 mm and a thickness of 0.6 mm Brazing material layer 6: Brazing material plate having a diameter of 160 mm and a thickness of 0.04 mm.

  The purity of the Ni plate forming the Ni layer 2 is JIS1 type. The material of the Cu plate forming the intermediate Cu layer 3c is C1020. The purity of the Ti plate forming the Ti layer 4 is JIS1 type. The purity of the Al plate forming the Al layer 5 is 4N. The composition of the brazing material plate forming the brazing material layer 6 is Al-8 mass% Si.

  Next, in the integration step, as shown in FIG. 4, the bonding between the Ni layer 2 and the intermediate Cu layer 3c, the bonding between the intermediate Cu layer 3c and the Ti layer 4, and the bonding between the Ti layer 4 and the Al layer 5 are performed. And joining of the Al layer 5 and the brazing filler metal layer 6 was simultaneously performed by the discharge plasma sintering method. Thereby, the laminated material 1 was obtained. It was confirmed that each bonding interface of the laminated material 1 was in a diffusion bonding state.

  The diameter of each punch 32 used in this integration step is 150 mm. Moreover, the joining conditions applied in this integration step are a heating temperature of 540 ° C., a heating temperature holding time of 10 min, a temperature rising rate of 35 ° C./min, and a pressure of 10 MPa.

  Next, the laminated material 1 thus obtained is cut into a size of 30 mm in length × 30 mm in width, and then the laminated material 1, the ceramic layer 10, the brazing material layer 11, and the metal base layer 12 are brazed in the furnace. Joined together in a laminated form [brazing process]. Thereby, an insulating substrate 15 was obtained.

In this brazing process, an AlN plate (length 30 mm × width 30 mm × thickness 1 mm) is used as the ceramic layer 10, and a brazing material plate of Al-8 mass% Si (length 30 mm × width 30 mm × thickness 0) is used as the brazing material layer 11. .04 mm) and a pure Al plate having a purity of 4N (length 30 mm × width 30 mm × thickness 0.6 mm) was used as the metal base layer 12. The brazing conditions applied in the brazing step are a heating temperature of 600 ° C., a heating temperature holding time of 15 min, and an applied load of 6 g / cm 2 .

  Subsequently, when the thermal cycle test at −40 to 125 ° C. was repeated 1000 times for the insulating substrate 15 thus obtained, cracking and peeling at each bonding interface of the insulating substrate 15 and the Ni layer 2 of the insulating substrate 15 were obtained. No deformation of the surface 2a occurred.

<Example 4>
In the present Example 4, the laminated material 1 was manufactured according to the manufacturing method of the laminated material 1 of the said 2nd Embodiment shown in FIG.

  As the Ni layer 2, Ti layer 4, Al layer 5 and brazing material layer 6, the following disk-shaped plates were prepared.

Ni layer 2: Pure Ni plate having a diameter of 160 mm × 0.02 mm thickness Ti layer 4: Pure Ti plate having a diameter of 160 mm × thickness of 0.01 mm Al layer 5: Pure Al plate having a diameter of 160 mm × thickness of 0.6 mm Brazing material Layer 6: brazing material plate having a diameter of 160 mm and a thickness of 0.04 mm.

  The purity of the Ni plate forming the Ni layer 2 is JIS1 type. The purity of the Ti plate forming the Ti layer 4 is JIS1 type. The purity of the Al plate forming the Al layer 5 is 4N. The composition of the brazing material plate forming the brazing material layer 6 is Al-8 mass% Si.

The intermediate layer 3 is an intermediate Al layer 3 a made of an Al vapor deposition film formed by vapor deposition on the lower surface of the Ni layer 2. The formation method of this intermediate Al layer 3a is as follows. That is, Al was vapor-deposited over the entire lower surface of the Ni layer 2 by an ion plating method as a PVD method, thereby forming an intermediate Al layer 3 a on the lower surface of the Ni layer 2. The thickness of the intermediate Al layer 3a is 500 nm. The film forming conditions applied at this time were: degree of vacuum: 2 × 10 −2 Pa, Ar gas supply amount: 75 ml / min, process pressure: 2.2 Pa, bias voltage: 50 V, arc current: 70 A, heater temperature: 150 ° C, treatment time: 5 mim.

  Next, in the integration step, the joining of the intermediate Al layer 3a and the Ti layer 4, the joining of the Ti layer 4 and the Al layer 5, and the joining of the Al layer 5 and the brazing filler metal layer 6 are performed by a discharge plasma sintering method. At the same time. Thereby, the laminated material 1 was obtained. It was confirmed that each bonding interface of the laminated material 1 was in a diffusion bonding state.

  The diameter of each punch 32 used in this integration step is 150 mm. Also, the joining conditions applied in this integration step are a heating temperature of 530 ° C., a heating temperature holding time of 10 min, a temperature rising rate of 35 ° C./min, and a pressing force of 10 MPa.

  Next, the laminated material 1 thus obtained is cut into a size of 30 mm in length × 30 mm in width, and then the laminated material 1, the ceramic layer 10, the brazing material layer 11, and the metal base layer 12 are brazed in the furnace. Joined together in a laminated form [brazing process]. Thereby, an insulating substrate 15 was obtained.

In this brazing process, an AlN plate (length 30 mm × width 30 mm × thickness 1 mm) is used as the ceramic layer 10, and a brazing material plate of Al-8 mass% Si (length 30 mm × width 30 mm × thickness 0) is used as the brazing material layer 11. .04 mm) and a pure Al plate having a purity of 4N (length 30 mm × width 30 mm × thickness 0.6 mm) was used as the metal base layer 12. The brazing conditions applied in the brazing step are a heating temperature of 600 ° C., a heating temperature holding time of 15 min, and an applied load of 6 g / cm 2 .

  Subsequently, when the thermal cycle test at −40 to 125 ° C. was repeated 1000 times for the insulating substrate 15 thus obtained, cracking and peeling at each bonding interface of the insulating substrate 15 and the Ni layer 2 of the insulating substrate 15 were obtained. No deformation of the surface 2a occurred.

<Example 5>
In Example 5, the laminated material 1 was produced according to the production method of the laminated material 1 of the second embodiment shown in FIG.

  As the Ni layer 2, Ti layer 4, Al layer 5 and brazing material layer 6, the following disk-shaped plates were prepared.

Ni layer 2: Pure Ni plate having a diameter of 160 mm × 0.02 mm thickness Ti layer 4: Pure Ti plate having a diameter of 160 mm × thickness of 0.01 mm Al layer 5: Pure Al plate having a diameter of 160 mm × thickness of 0.6 mm Brazing material Layer 6: brazing material plate having a diameter of 160 mm and a thickness of 0.04 mm.

  The purity of the Ni plate forming the Ni layer 2 is JIS1 type. The purity of the Ti plate forming the Ti layer 4 is JIS1 type. The purity of the Al plate forming the Al layer 5 is 4N. The composition of the brazing material plate forming the brazing material layer 6 is Al-8 mass% Si.

The intermediate layer 3 is an intermediate Cu layer 3 c made of a Cu vapor deposition film formed by vapor deposition on the lower surface of the Ni layer 2. The formation method of this intermediate Cu layer 3c is as follows. That is, Cu was vapor-deposited over the entire lower surface of the Ni layer 2 by an ion plating method as a PVD method, thereby forming an intermediate Cu layer 3 c on the lower surface of the Ni layer 2. The thickness of the intermediate Cu layer 3c is 500 nm. The film forming conditions applied at this time were: degree of vacuum: 2 × 10 −2 Pa, Ar gas supply amount: 75 ml / min, process pressure: 2.2 Pa, bias voltage: 50 V, arc current: 80 A, heater temperature: 150 ° C, treatment time: 5 min.

  Next, in the integration step, the joining of the intermediate Cu layer 3c and the Ti layer 4, the joining of the Ti layer 4 and the Al layer 5, and the joining of the Al layer 5 and the brazing filler metal layer 6 are performed by a discharge plasma sintering method. At the same time. Thereby, the laminated material 1 was obtained. It was confirmed that each bonding interface of the laminated material 1 was in a diffusion bonding state.

  The diameter of each punch 32 used in this integration step is 150 mm. Moreover, the joining conditions applied in this integration step are a heating temperature of 540 ° C., a heating temperature holding time of 10 min, a temperature rising rate of 35 ° C./min, and a pressure of 10 MPa.

  Next, the laminated material 1 thus obtained is cut into a size of 30 mm in length × 30 mm in width, and then the laminated material 1, the ceramic layer 10, the brazing material layer 11, and the metal base layer 12 are brazed in the furnace. Joined together in a laminated form [brazing process]. Thereby, an insulating substrate 15 was obtained.

In this brazing process, an AlN plate (length 30 mm × width 30 mm × thickness 1 mm) is used as the ceramic layer 10, and a brazing material plate of Al-8 mass% Si (length 30 mm × width 30 mm × thickness 0) is used as the brazing material layer 11. .04 mm) and a pure Al plate having a purity of 4N (length 30 mm × width 30 mm × thickness 0.6 mm) was used as the metal base layer 12. The brazing conditions applied in the brazing step are a heating temperature of 600 ° C., a heating temperature holding time of 15 min, and an applied load of 6 g / cm 2 .

  Subsequently, when the thermal cycle test at −40 to 125 ° C. was repeated 1000 times for the insulating substrate 15 thus obtained, cracking and peeling at each bonding interface of the insulating substrate 15 and the Ni layer 2 of the insulating substrate 15 were obtained. No deformation of the surface 2a occurred.

<Example 6>
In the present Example 6, the laminated material 1 was manufactured according to the manufacturing method of the laminated material 1 of the said 3rd Embodiment shown in FIG.

  As the Ni layer 2, the Al layer 5, and the brazing material layer 6, the following disk-shaped plates were prepared.

Ni layer 2: pure Ni plate having a diameter of 160 mm × thickness of 0.02 mm Al layer 5: pure Al plate having a diameter of 160 mm × thickness of 0.6 mm Brazing material layer 6: brazing material plate having a diameter of 160 mm × thickness of 0.04 mm.

  The purity of the Ni plate forming the Ni layer 2 is JIS1 type. The purity of the Al plate forming the Al layer 5 is 4N. The composition of the brazing material plate forming the brazing material layer 6 is Al-8 mass% Si.

The intermediate layer 3 is an intermediate Cu layer 3 c made of a Cu vapor deposition film formed by vapor deposition on the lower surface of the Ni layer 2. The formation method of this intermediate Cu layer 3c is as follows. That is, Cu was vapor-deposited over the entire lower surface of the Ni layer 2 by an ion plating method as a PVD method, thereby forming an intermediate Cu layer 3 c on the lower surface of the Ni layer 2. The thickness of the intermediate Cu layer 3c is 500 nm. The film forming conditions applied at this time were: degree of vacuum: 2 × 10 −2 Pa, Ar gas supply amount: 75 ml / min, process pressure: 2.2 Pa, bias voltage: 50 V, arc current: 80 A, heater temperature: 150 ° C, treatment time: 5 min.

The Ti layer 4 is a Ti vapor deposition film formed by vapor deposition on the intermediate Cu layer 3c. The formation method of this Ti layer 4 is as follows. That is, Ti was vapor deposited on the entire surface of the intermediate Cu layer 3c by an ion plating method as a PVD method, thereby forming the Ti layer 4 on the intermediate Cu layer 3c. The thickness of the Ti layer 4 is 1000 nm. The film forming conditions applied at this time were: degree of vacuum: 2 × 10 −2 Pa, Ar gas supply amount: 75 ml / min, process pressure: 2.2 Pa, bias voltage: 50 V, arc current: 90 A, heater temperature: 150 ° C, treatment time: 10 min.

  Next, in the integration step, the joining of the Ti layer 4 and the Al layer 5 and the joining of the Al layer 5 and the brazing filler metal layer 6 were simultaneously performed by a discharge plasma sintering method. Thereby, the laminated material 1 was obtained. It was confirmed that each bonding interface of the laminated material 1 was in a diffusion bonding state.

  The diameter of each punch 32 used in this integration step is 150 mm. Moreover, the joining conditions applied in this integration step are a heating temperature of 540 ° C., a heating temperature holding time of 10 min, a temperature rising rate of 35 ° C./min, and a pressure of 10 MPa.

  Next, the laminated material 1 thus obtained is cut into a size of 30 mm in length × 30 mm in width, and then the laminated material 1, the ceramic layer 10, the brazing material layer 11, and the metal base layer 12 are brazed in the furnace. Joined together in a laminated form [brazing process]. Thereby, an insulating substrate 15 was obtained.

In this brazing process, an AlN plate (length 30 mm × width 30 mm × thickness 1 mm) is used as the ceramic layer 10, and a brazing material plate of Al-8 mass% Si (length 30 mm × width 30 mm × thickness 0) is used as the brazing material layer 11. .04 mm) and a pure Al plate having a purity of 4N (length 30 mm × width 30 mm × thickness 0.6 mm) was used as the metal base layer 12. The brazing conditions applied in the brazing step are a heating temperature of 600 ° C., a heating temperature holding time of 15 min, and an applied load of 6 g / cm 2 .

  Subsequently, when the thermal cycle test at −40 to 125 ° C. was repeated 1000 times for the insulating substrate 15 thus obtained, cracking and peeling at each bonding interface of the insulating substrate 15 and the Ni layer 2 of the insulating substrate 15 were obtained. No deformation of the surface 2a occurred.

<Example 7>
In Example 7, the laminated material 1 was produced according to the method for producing the laminated material 1 of the first embodiment shown in FIG.

  As the Ni layer 2, the intermediate Al layer 3a, the Ti layer 4, the Al layer 5, and the brazing material layer 6, the following disk-shaped plates were prepared.

Ni layer 2: Pure Ni plate having a diameter of 160 mm × 0.02 mm in thickness Intermediate Al layer 3a: Al plate having a diameter of 160 mm × 0.012 mm in thickness Ti layer 4: Pure Ti plate having a diameter of 160 mm × thickness of 0.01 mm Al layer 5: Pure Al plate having a diameter of 160 mm and a thickness of 0.6 mm Brazing material layer 6: Brazing material plate having a diameter of 160 mm and a thickness of 0.04 mm.

  The purity of the Ni plate forming the Ni layer 2 is JIS1 type. The material of the Al plate forming the intermediate Al layer 3a is A1100. The purity of the Ti plate forming the Ti layer 4 is JIS1 type. The purity of the Al plate forming the Al layer 5 is 4N. The composition of the brazing material plate forming the brazing material layer 6 is Al-8 mass% Si.

  Next, in the integration step, 30 laminates 8 of the Ni layer 2, the intermediate Al layer 3a, the Ti layer 4, the Al layer 5, and the brazing filler metal layer 6 were prepared. And as shown in FIG. 6, these laminated bodies 8 were laminated | stacked via the electroconductive release plate 35 between each laminated body 8 and 8 which mutually overlaps. The release plate 35 is a disc-shaped carbon plate having a diameter of 150 mm and a thickness of 2 mm. These laminates 8 are pressed together by a pair of graphite punches 32, 32 of the discharge plasma sintering apparatus 30 in the lamination direction in a 3 Pa vacuum atmosphere, and a pulse is applied between the punches 32, 32. By energizing an electric current, these laminated bodies 8 were heated together, and thereby adjacent layers in each laminated body 8 were simultaneously joined in a fixed state. As a result, 30 laminated materials 1 were obtained. It was confirmed that each bonding interface of the laminated material 1 was in a diffusion bonding state.

  The diameter of each punch used in this integration process is 150 mm. Also, the joining conditions applied in this integration step are a heating temperature of 530 ° C., a heating temperature holding time of 10 min, a temperature rising rate of 35 ° C./min, and a pressing force of 10 MPa.

  Next, the laminated material 1 thus obtained is cut into a size of 30 mm in length × 30 mm in width, and then the laminated material 1, the ceramic layer 10, the brazing material layer 11, and the metal base layer 12 are brazed in the furnace. Joined together in a laminated form [brazing process]. Thereby, an insulating substrate 15 was obtained.

In this brazing process, an AlN plate (length 30 mm × width 30 mm × thickness 1 mm) is used as the ceramic layer 10, and a brazing material plate of Al-8 mass% Si (length 30 mm × width 30 mm × thickness 0) is used as the brazing material layer 11. .04 mm) and a pure Al plate having a purity of 4N (length 30 mm × width 30 mm × thickness 0.6 mm) was used as the metal base layer 12. The brazing conditions applied in the brazing step are a heating temperature of 600 ° C., a heating temperature holding time of 15 min, and an applied load of 6 g / cm 2 .

  Subsequently, when the thermal cycle test at −40 to 125 ° C. was repeated 1000 times for the insulating substrate 15 thus obtained, cracking and peeling at each bonding interface of the insulating substrate 15 and the Ni layer 2 of the insulating substrate 15 were obtained. No deformation of the surface 2a occurred.

<Comparative Example 1>
As the Ni layer 2, Ti layer 4, Al layer 5 and brazing material layer 6, the following disk-shaped plates were prepared.

Ni layer 2: Pure Ni plate having a diameter of 160 mm × 0.02 mm thickness Ti layer 4: Pure Ti plate having a diameter of 160 mm × thickness of 0.01 mm Al layer 5: Pure Al plate having a diameter of 160 mm × thickness of 0.6 mm Brazing material Layer 6: brazing material plate having a diameter of 160 mm and a thickness of 0.04 mm.

  The purity of the Ni plate forming the Ni layer 2 is JIS1 type. The purity of the Ti plate forming the Ti layer 4 is JIS1 type. The purity of the Al plate forming the Al layer 5 is 4N. The composition of the brazing material plate forming the brazing material layer 6 is Al-8 mass% Si.

  Next, both the punches 32, 32 are pressed while pressing the laminated body of the Al layer 5 of the Ni layer 2 and the Ti layer 4 and the brazing filler metal layer 6 in the 3 Pa vacuum atmosphere in the laminating direction. The laminated body was heated by passing a pulse current between them, thereby attempting to join adjacent layers in the laminated body. The joining conditions applied at this time were a heating temperature of 540 ° C., a heating temperature holding time of 10 min, a heating rate of 35 ° C./min, and a pressing force of 10 MPa. As a result, peeling occurred at the bonding interface between the Ni layer 2 and the Ti layer 4.

  INDUSTRIAL APPLICABILITY The present invention is applicable to a method for manufacturing a laminated material for an insulating substrate, a laminated material for an insulating substrate, an insulating substrate, and a semiconductor module.

1: laminated material 2: Ni layer 3: intermediate layer 3a: intermediate Al layer 3c: intermediate Cu layer 4: Ti layer 5: Al layer 6: brazing material layer 8: laminated body 10: ceramic layer 15: insulating substrate 17: heat dissipation Member 20: Semiconductor module 21: Semiconductor element 30: Discharge plasma sintering apparatus 32: Punch 35: Conductive release plate (conductive release member)

Claims (37)

  1. A Ni layer formed of Ni or Ni alloy to which a semiconductor element is bonded to the surface;
    The Ni layer is disposed on the opposite side of the surface side, and consists of an intermediate Al layer formed of Al or Al alloy, or an intermediate layer of an intermediate Cu layer formed of Cu or Cu alloy,
    A Ti layer formed of Ti or a Ti alloy disposed on the opposite side of the intermediate layer from the Ni layer disposed side;
    Insulating substrate lamination comprising an integration step of integrating the Ti layer with an Al layer formed of Al or an Al alloy disposed on the side opposite to the intermediate layer arrangement side of the Ti layer. A method of manufacturing the material.
  2. The Ni layer is formed from a Ni plate or a Ni alloy plate,
    The intermediate layer is formed from an Al plate or an Al alloy plate, or formed from a Cu plate or a Cu alloy plate,
    The Ti layer is formed from a Ti plate or a Ti alloy plate,
    The Al layer is formed from an Al plate or an Al alloy plate,
    In the integration step, bonding of the Ni layer and the intermediate layer, bonding of the intermediate layer and the Ti layer, and bonding of the Ti layer and the Al layer are simultaneously performed by a discharge plasma sintering method. The manufacturing method of the laminated material for insulating substrates of Claim 1.
  3. In the integration step,
    A plurality of laminates of the Ni layer, the intermediate layer, the Ti layer, and the Al layer are prepared, and the plurality of laminates are laminated via a conductive release member between the laminates that overlap each other.
    Next, a pulse current is applied between both punches while simultaneously pressing the plurality of laminates in the stacking direction with a pair of discharge plasma sintering punches arranged on both sides in the stacking direction of the plurality of stacks. The manufacturing method of the laminated material for insulating substrates of Claim 2 which performs predetermined joining simultaneously with respect to each laminated body by doing.
  4. The laminated material includes a brazing material layer disposed on the side opposite to the Ti layer arrangement side of the Al layer,
    In the integration step, the bonding between the Ni layer and the intermediate layer, the bonding between the intermediate layer and the Ti layer, the bonding between the Ti layer and the Al layer, the Al layer and the brazing material layer The method for manufacturing a laminated material for an insulating substrate according to claim 2, wherein the bonding to the insulating substrate is simultaneously performed by a discharge plasma sintering method.
  5. In the integration step,
    A plurality of laminates of the Ni layer, the intermediate layer, the Ti layer, the Al layer, and the brazing material layer are prepared, and a conductive release member is interposed between the laminates that overlap the plurality of laminates. Laminated
    Next, a pulse current is applied between both punches while simultaneously pressing the plurality of laminates in the stacking direction with a pair of discharge plasma sintering punches arranged on both sides in the stacking direction of the plurality of stacks. The manufacturing method of the laminated material for insulating substrates of Claim 4 which performs predetermined joining simultaneously with respect to each laminated body by doing.
  6. The Ni layer is formed from a Ni plate or a Ni alloy plate,
    The intermediate layer is formed by vapor deposition on the Ni layer,
    The Ti layer is formed from a Ti plate or a Ti alloy plate,
    The Al layer is formed from an Al plate or an Al alloy plate,
    2. The manufacturing of a laminated material for an insulating substrate according to claim 1, wherein in the integration step, the bonding between the intermediate layer and the Ti layer and the bonding between the Ti layer and the Al layer are simultaneously performed by a discharge plasma sintering method. Method.
  7. In the integration step,
    A plurality of laminates of the Ni layer, the intermediate layer, the Ti layer, and the Al layer are prepared, and the plurality of laminates are laminated via a conductive release member between the laminates that overlap each other.
    Next, a pulse current is applied between both punches while simultaneously pressing the plurality of laminates in the stacking direction with a pair of discharge plasma sintering punches arranged on both sides in the stacking direction of the plurality of stacks. The manufacturing method of the laminated material for insulating substrates of Claim 6 which performs predetermined joining simultaneously with respect to each laminated body by doing.
  8. The laminated material includes a brazing material layer disposed on the side opposite to the Ti layer arrangement side of the Al layer,
    In the integration step, the bonding between the intermediate layer and the Ti layer, the bonding between the Ti layer and the Al layer, and the bonding between the Al layer and the brazing material layer are simultaneously performed by a discharge plasma sintering method. The manufacturing method of the laminated material for insulating substrates of Claim 6 to perform.
  9. In the integration step,
    A plurality of laminates of the Ni layer, the intermediate layer, the Ti layer, the Al layer, and the brazing material layer are prepared, and a conductive release member is interposed between the laminates that overlap the plurality of laminates. Laminated
    Next, a pulse current is applied between both punches while simultaneously pressing the plurality of laminates in the stacking direction with a pair of discharge plasma sintering punches arranged on both sides in the stacking direction of the plurality of stacks. The manufacturing method of the laminated material for insulating substrates of Claim 8 which performs predetermined joining simultaneously with respect to each laminated body by doing.
  10. The Ni layer is formed from a Ni plate or a Ni alloy plate,
    The intermediate layer is formed by vapor deposition on the Ni layer,
    The Ti layer is formed by vapor deposition on the intermediate layer,
    The Al layer is formed from an Al plate or an Al alloy plate,
    The method for manufacturing a laminated material for an insulating substrate according to claim 1, wherein in the integration step, the Ti layer and the Al layer are joined by a discharge plasma sintering method.
  11. In the integration step,
    A plurality of laminates of the Ni layer, the intermediate layer, the Ti layer, and the Al layer are prepared, and the plurality of laminates are laminated via a conductive release member between the laminates that overlap each other.
    Next, a pulse current is applied between both punches while simultaneously pressing the plurality of laminates in the stacking direction with a pair of discharge plasma sintering punches arranged on both sides in the stacking direction of the plurality of stacks. The manufacturing method of the laminated material for insulating substrates of Claim 10 which performs predetermined joining with respect to each laminated body by doing.
  12. The laminated material includes a brazing material layer disposed on the side opposite to the Ti layer arrangement side of the Al layer,
    The insulating substrate laminate material according to claim 10, wherein in the integration step, the Ti layer and the Al layer and the Al layer and the brazing material layer are simultaneously joined by a discharge plasma sintering method. Production method.
  13. In the integration step,
    A plurality of laminates of the Ni layer, the intermediate layer, the Ti layer, the Al layer, and the brazing material layer are prepared, and a conductive release member is interposed between the laminates that overlap the plurality of laminates. Laminated
    Next, a pulse current is applied between both punches while simultaneously pressing the plurality of laminates in the stacking direction with a pair of discharge plasma sintering punches arranged on both sides in the stacking direction of the plurality of stacks. The manufacturing method of the laminated material for insulating substrates of Claim 12 which performs predetermined joining simultaneously with respect to each laminated body by doing.
  14. The Ni layer is formed from a Ni plate or a Ni alloy plate,
    The intermediate layer is formed by vapor deposition on the Ti layer,
    The Ti layer is formed from a Ti plate or a Ti alloy plate,
    The Al layer is formed from an Al plate or an Al alloy plate,
    2. The production of a laminated material for an insulating substrate according to claim 1, wherein in the integration step, the joining of the Ni layer and the intermediate layer and the joining of the Ti layer and the Al layer are simultaneously performed by a discharge plasma sintering method. Method.
  15. In the integration step,
    A plurality of laminates of the Ni layer, the intermediate layer, the Ti layer, and the Al layer are prepared, and the plurality of laminates are laminated via a conductive release member between the laminates that overlap each other.
    Next, a pulse current is applied between both punches while simultaneously pressing the plurality of laminates in the stacking direction with a pair of discharge plasma sintering punches arranged on both sides in the stacking direction of the plurality of stacks. The manufacturing method of the laminated material for insulating substrates of Claim 14 which performs predetermined joining simultaneously with respect to each laminated body by doing.
  16. The laminated material includes a brazing material layer disposed on the side opposite to the Ti layer arrangement side of the Al layer,
    In the integration step, the bonding between the Ni layer and the intermediate layer, the bonding between the Ti layer and the Al layer, and the bonding between the Al layer and the brazing material layer are simultaneously performed by a discharge plasma sintering method. The manufacturing method of the laminated material for insulating substrates of Claim 14 to perform.
  17. In the integration step,
    A plurality of laminates of the Ni layer, the intermediate layer, the Ti layer, the Al layer, and the brazing material layer are prepared, and a conductive release member is interposed between the laminates that overlap the plurality of laminates. Laminated
    Next, a pulse current is applied between both punches while simultaneously pressing the plurality of laminates in the stacking direction with a pair of discharge plasma sintering punches arranged on both sides in the stacking direction of the plurality of stacks. The manufacturing method of the laminated material for insulating substrates of Claim 16 which performs predetermined joining simultaneously with respect to each laminated body by doing.
  18. The Ni layer is formed from a Ni plate or a Ni alloy plate,
    The intermediate layer is formed from an Al plate or an Al alloy plate, or formed from a Cu plate or a Cu alloy plate,
    The Ti layer is formed by vapor deposition on the Al layer,
    The Al layer is formed from an Al plate or an Al alloy plate,
    2. The production of a laminated material for an insulating substrate according to claim 1, wherein in the integration step, the joining of the Ni layer and the intermediate layer and the joining of the intermediate layer and the Ti layer are simultaneously performed by a discharge plasma sintering method. Method.
  19. In the integration step,
    A plurality of laminates of the Ni layer, the intermediate layer, the Ti layer, and the Al layer are prepared, and the plurality of laminates are laminated via a conductive release member between the laminates that overlap each other.
    Next, a pulse current is applied between both punches while simultaneously pressing the plurality of laminates in the stacking direction with a pair of discharge plasma sintering punches arranged on both sides in the stacking direction of the plurality of stacks. The method for producing a laminated material for an insulating substrate according to claim 18, wherein predetermined bonding is simultaneously performed on each laminated body.
  20. The laminated material includes a brazing material layer disposed on the side opposite to the Ti layer arrangement side of the Al layer,
    In the integration step, the joining of the Ni layer and the intermediate layer, the joining of the intermediate layer and the Ti layer, and the joining of the Al layer and the brazing material layer are simultaneously performed by a discharge plasma sintering method. The manufacturing method of the laminated material for insulating substrates of Claim 18 to perform.
  21. In the integration step,
    A plurality of laminates of the Ni layer, the intermediate layer, the Ti layer, the Al layer, and the brazing material layer are prepared, and a conductive release member is interposed between the laminates that overlap the plurality of laminates. Laminated
    Next, a pulse current is applied between both punches while simultaneously pressing the plurality of laminates in the stacking direction with a pair of discharge plasma sintering punches arranged on both sides in the stacking direction of the plurality of stacks. 21. The method for manufacturing a laminated material for an insulating substrate according to claim 20, wherein predetermined bonding is simultaneously performed on each laminated body.
  22. The Ni layer is formed from a Ni plate or a Ni alloy plate,
    The intermediate layer is formed by vapor deposition on the Ti layer,
    The Ti layer is formed by vapor deposition on the Al layer,
    The Al layer is formed from an Al plate or an Al alloy plate,
    The method for manufacturing a laminated material for an insulating substrate according to claim 1, wherein in the integration step, the Ni layer and the intermediate layer are joined by a discharge plasma sintering method.
  23. In the integration step,
    A plurality of laminates of the Ni layer, the intermediate layer, the Ti layer, and the Al layer are prepared, and the plurality of laminates are laminated via a conductive release member between the laminates that overlap each other.
    Next, a pulse current is applied between both punches while simultaneously pressing the plurality of laminates in the stacking direction with a pair of discharge plasma sintering punches arranged on both sides in the stacking direction of the plurality of stacks. The manufacturing method of the laminated material for insulating substrates of Claim 22 which performs predetermined joining with respect to each laminated body by doing.
  24. The laminated material includes a brazing material layer disposed on the side opposite to the Ti layer arrangement side of the Al layer,
    23. The laminated material for an insulating substrate according to claim 22, wherein in the integration step, the joining of the Ni layer and the intermediate layer and the joining of the Al layer and the brazing material layer are simultaneously performed by a discharge plasma sintering method. Production method.
  25. In the integration step,
    A plurality of laminates of the Ni layer, the intermediate layer, the Ti layer, the Al layer, and the brazing material layer are prepared, and a conductive release member is interposed between the laminates that overlap the plurality of laminates. Laminated
    Next, a pulse current is applied between both punches while simultaneously pressing the plurality of laminates in the stacking direction with a pair of discharge plasma sintering punches arranged on both sides in the stacking direction of the plurality of stacks. The manufacturing method of the laminated material for insulating substrates of Claim 24 which performs predetermined joining simultaneously with respect to each laminated body by doing.
  26.   The method for manufacturing a laminated material for an insulating substrate according to any one of claims 1 to 25, wherein the Al layer is formed of pure Al having a purity of 4N or higher.
  27. A Ni layer formed of Ni or Ni alloy to which a semiconductor element is bonded to the surface;
    The Ni layer is disposed on the opposite side of the surface side, and consists of an intermediate Al layer formed of Al or Al alloy, or an intermediate layer of an intermediate Cu layer formed of Cu or Cu alloy,
    A Ti layer formed of Ti or a Ti alloy disposed on the opposite side of the intermediate layer from the Ni layer disposed side;
    A laminated material for an insulating substrate, characterized in that an Al layer formed of Al or an Al alloy arranged on the opposite side of the Ti layer from the intermediate layer arranged side is integrated in a laminated form.
  28. The Ni layer is formed from a Ni plate or a Ni alloy plate,
    The intermediate layer is formed from an Al plate or an Al alloy plate, or formed from a Cu plate or a Cu alloy plate,
    The Ti layer is formed from a Ti plate or a Ti alloy plate,
    The Al layer is formed from an Al plate or an Al alloy plate,
    28. The laminated material for an insulating substrate according to claim 27, wherein the Ni layer and the intermediate layer, the intermediate layer and the Ti layer, and the Ti layer and the Al layer are bonded together by a discharge plasma sintering method.
  29. The Ni layer is formed from a Ni plate or a Ni alloy plate,
    The intermediate layer is formed by vapor deposition on the Ni layer,
    The Ti layer is formed from a Ti plate or a Ti alloy plate,
    The Al layer is formed from an Al plate or an Al alloy plate,
    28. The laminated material for an insulating substrate according to claim 27, wherein the intermediate layer and the Ti layer, and the Ti layer and the Al layer are bonded together by a discharge plasma sintering method.
  30. The Ni layer is formed from a Ni plate or a Ni alloy plate,
    The intermediate layer is formed by vapor deposition on the Ni layer,
    The Ti layer is formed by vapor deposition on the intermediate layer,
    The Al layer is formed from an Al plate or an Al alloy plate,
    28. The laminated material for an insulating substrate according to claim 27, wherein the Ti layer and the Al layer are joined by a discharge plasma sintering method.
  31. The Ni layer is formed from a Ni plate or a Ni alloy plate,
    The intermediate layer is formed by vapor deposition on the Ti layer,
    The Ti layer is formed from a Ti plate or a Ti alloy plate,
    The Al layer is formed from an Al plate or an Al alloy plate,
    28. The laminated material for an insulating substrate according to claim 27, wherein the Ni layer and the intermediate layer, and the Ti layer and the Al layer are all bonded by a discharge plasma sintering method.
  32. The Ni layer is formed from a Ni plate or a Ni alloy plate,
    The intermediate layer is formed from an Al plate or an Al alloy plate, or formed from a Cu plate or a Cu alloy plate,
    The Ti layer is formed by vapor deposition on the Al layer,
    The Al layer is formed from an Al plate or an Al alloy plate,
    28. The laminated material for an insulating substrate according to claim 27, wherein the Ni layer and the intermediate layer, and the intermediate layer and the Ti layer are bonded together by a discharge plasma sintering method.
  33. The Ni layer is formed from a Ni plate or a Ni alloy plate,
    The intermediate layer is formed by vapor deposition on the Ti layer,
    The Ti layer is formed by vapor deposition on the Al layer,
    The Al layer is formed from an Al plate or an Al alloy plate,
    28. The laminated material for an insulating substrate according to claim 27, wherein the Ni layer and the intermediate layer are joined by a discharge plasma sintering method.
  34. A brazing filler metal layer is arranged on the side of the Al layer opposite to the Ti layer arrangement side,
    The laminated material for an insulating substrate according to any one of claims 27 to 33, wherein the Al layer and the brazing material layer are joined by a discharge plasma sintering method.
  35.   The method for manufacturing a laminated material for an insulating substrate according to any one of claims 27 to 34, wherein the Al layer is formed of pure Al having a purity of 4N or higher.
  36.   An insulating substrate comprising the laminate material according to any one of claims 27 to 35.
  37.   36. A semiconductor module, wherein a semiconductor element is joined to the surface of the Ni layer of the laminated material according to any one of claims 27 to 35 by soldering.
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JP2016076619A (en) * 2014-10-07 2016-05-12 昭和電工株式会社 Manufacturing method of substrate for electronic module, and substrate for electronic module
WO2017222061A1 (en) * 2016-06-23 2017-12-28 三菱マテリアル株式会社 Method for manufacturing insulated circuit board, insulated circuit board, and thermoelectric conversion module
US10798824B2 (en) 2016-06-23 2020-10-06 Mitsubishi Materials Corporation Method for manufacturing insulated circuit board, insulated circuit board, and thermoelectric conversion module

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JP2010238932A (en) * 2009-03-31 2010-10-21 Mitsubishi Materials Corp Power module substrate, power module substrate having heat sink, and method of manufacturing power module

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JPH1197807A (en) * 1997-09-18 1999-04-09 Denki Kagaku Kogyo Kk Circuit substrate
JP2002043482A (en) * 2000-05-17 2002-02-08 Ngk Insulators Ltd Member for electronic circuit, its manufacturing method and electronic component
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JP2016076619A (en) * 2014-10-07 2016-05-12 昭和電工株式会社 Manufacturing method of substrate for electronic module, and substrate for electronic module
WO2017222061A1 (en) * 2016-06-23 2017-12-28 三菱マテリアル株式会社 Method for manufacturing insulated circuit board, insulated circuit board, and thermoelectric conversion module
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