JP2002043265A - Semiconductor wafer cleaning method and apparatus - Google Patents

Semiconductor wafer cleaning method and apparatus

Info

Publication number
JP2002043265A
JP2002043265A JP2000224973A JP2000224973A JP2002043265A JP 2002043265 A JP2002043265 A JP 2002043265A JP 2000224973 A JP2000224973 A JP 2000224973A JP 2000224973 A JP2000224973 A JP 2000224973A JP 2002043265 A JP2002043265 A JP 2002043265A
Authority
JP
Japan
Prior art keywords
semiconductor wafer
cleaning liquid
cleaning
supply means
peripheral portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000224973A
Other languages
Japanese (ja)
Inventor
Takayuki Inbe
貴之 印部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2000224973A priority Critical patent/JP2002043265A/en
Publication of JP2002043265A publication Critical patent/JP2002043265A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To obtain a semiconductor wafer cleaning apparatus which can prevent entry of a cleaning liquid into a semiconductor wafer. SOLUTION: The semiconductor wafer cleaning apparatus comprises a cleaning liquid supply means 15 to supply the cleaning liquid to the external circumference of the semiconductor wafer 14, a gas supply means 16 which is formed near the cleaning liquid supply means 15 to remove the cleaning liquid from a region a little wider than the external circumference the semiconductor wafer 4 to which the cleaning liquid is supplied, and a control means 19 to control the gas supply means 16 in order to immediately remove the cleaning liquid after the cleaning liquid is supplied with the cleaning liquid supply means 15.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】この発明は、半導体ウエハの
外周部の洗浄処理を行う半導体ウエハの洗浄方法および
半導体ウエハ洗浄装置に係り、特に半導体ウエハの外周
部のみを確実に洗浄することができるものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor wafer cleaning method and a semiconductor wafer cleaning apparatus for cleaning an outer peripheral portion of a semiconductor wafer, and more particularly to a semiconductor wafer cleaning device capable of reliably cleaning only the outer peripheral portion of a semiconductor wafer. It is.

【0002】[0002]

【従来の技術】半導体ウエハは、シリコン基板ウエハに
拡散層を形成したり、導電膜を形成してパターン化した
り、絶縁膜を形成したりする工程を何段階にも繰り返し
て半導体素子をシリコン基板ウエハ上に作成していく。
そして、半導体素子を高性能化するに伴い、W、Co、
Cuといった金属系材料を半導体ウエハ上に使用する場
合が多くなってきた。
2. Description of the Related Art A semiconductor wafer is formed by repeating a process of forming a diffusion layer on a silicon substrate wafer, forming a conductive film to form a pattern, and forming an insulating film in a number of steps. It is created on a wafer.
And, as the performance of the semiconductor element becomes higher, W, Co,
In many cases, metal-based materials such as Cu are used on semiconductor wafers.

【0003】これらの金属系材料を半導体ウエハ上に使
用した後に、半導体ウエハ表面を洗浄する場合、従来も
っともよく使われていた洗浄はRCA洗浄と呼ばれる洗
浄方法である。しかし、このRCA洗浄方法を用いる
と、上記した金属性材料の種類によってはその金属が溶
出してしまい、ウエハ上に作成した配線、プラグといっ
たパターンに致命的なダメージが生じ、できあがるチッ
プの歩留まりを下げてしまう。さらに、場合によっては
溶出した金属系材料が二次汚染、三次汚染を引き起こし
てしまい、他のチップの歩留まりを大幅に下げてしまう
危険性すらあった。
When the surface of a semiconductor wafer is cleaned after using these metal-based materials on a semiconductor wafer, the cleaning method most often used conventionally is a cleaning method called RCA cleaning. However, when this RCA cleaning method is used, the metal is eluted depending on the kind of the above-mentioned metallic material, causing fatal damage to patterns such as wirings and plugs formed on the wafer, and reducing the yield of the resulting chip. Lower it. Further, in some cases, the eluted metal-based material may cause secondary contamination and tertiary contamination, and may even lower the yield of other chips.

【0004】そこで、半導体ウエハの外周部のみに洗浄
液を供給して洗浄処理する方法が例えば特開平8−12
4825号公報にて提案されている。図6は従来の半導
体ウエハ洗浄装置の構成を示す図である。まず、洗浄液
タンク1からの洗浄液は、容器7に備えられた脱気ユニ
ット2内に形成され、真空ポンプ8に接続された中空状
チューブ3を通って、スピンナ5上に載置されたウエハ
4の周辺表面部の近傍に位置する上部ノズル6と、ウエ
ハ裏面側に位置する裏面ノズル9へと供給される。この
上部ノズル6と裏面ノズル9とにより供給される洗浄液
は、エアオペレートバルブ10、11により制御され供
給されている。そして、半導体ウエハ4をスピンナ5に
より回転させながら、洗浄液を吹き付け洗浄を行ってい
る。
Therefore, a method of supplying a cleaning liquid only to the outer peripheral portion of a semiconductor wafer and performing a cleaning process is disclosed in, for example, Japanese Patent Laid-Open No.
No. 4825 has proposed this. FIG. 6 is a diagram showing a configuration of a conventional semiconductor wafer cleaning apparatus. First, the cleaning liquid from the cleaning liquid tank 1 is formed in the deaeration unit 2 provided in the container 7, passes through the hollow tube 3 connected to the vacuum pump 8, and passes through the wafer 4 placed on the spinner 5. Is supplied to the upper nozzle 6 located near the peripheral surface of the wafer and the back nozzle 9 located on the back side of the wafer. The cleaning liquid supplied by the upper nozzle 6 and the back nozzle 9 is controlled and supplied by air operated valves 10 and 11. Cleaning is performed by spraying a cleaning liquid while rotating the semiconductor wafer 4 with the spinner 5.

【0005】[0005]

【発明が解決しようとする課題】従来の半導体ウエハの
洗浄方法では、半導体ウエハの周辺部の洗浄を行う工程
において、洗浄液を外周部に吹き付けることのみにて行
っているため、半導体ウエハの周辺部に洗浄液が残存す
る可能性があり、洗浄液が半導体ウエハの内周側に侵入
し、半導体ウエハの不良の原因になるという問題点があ
った。
In the conventional method for cleaning a semiconductor wafer, the cleaning of the peripheral portion of the semiconductor wafer is performed only by spraying the cleaning liquid to the outer peripheral portion. However, there is a problem that the cleaning liquid may remain in the semiconductor wafer, and the cleaning liquid enters the inner peripheral side of the semiconductor wafer and causes a defect of the semiconductor wafer.

【0006】この発明は上記のような問題点を解消する
ためなされたもので、洗浄液が半導体ウエハの内周側に
入り込むことがなく、半導体ウエハの外周側のみを確実
に洗浄することができる半導体ウエハの洗浄方法および
半導体ウエハ洗浄装置を提供することを目的とする。
SUMMARY OF THE INVENTION The present invention has been made to solve the above-described problems, and a semiconductor which can reliably clean only the outer peripheral side of a semiconductor wafer without a cleaning liquid entering the inner peripheral side of the semiconductor wafer. An object of the present invention is to provide a method for cleaning a wafer and a semiconductor wafer cleaning apparatus.

【0007】[0007]

【課題を解決するための手段】この発明に係る請求項1
の半導体ウエハの洗浄方法は、半導体ウエハの外周部に
洗浄液供給手段より洗浄液を塗布した後直ちに、洗浄液
が塗布された領域より若干広い領域を対象にして除去手
段にて洗浄液を取り除くものである。
Means for Solving the Problems Claim 1 according to the present invention.
In the method of cleaning a semiconductor wafer described above, the cleaning liquid is removed from a peripheral area of the semiconductor wafer by a removing unit immediately after the cleaning liquid is applied from a cleaning liquid supply unit to an area slightly larger than a region where the cleaning liquid is applied.

【0008】また、この発明に係る請求項2の半導体ウ
エハの洗浄方法は、請求項1において、除去手段にて洗
浄液を取り除く方法として、半導体ウエハの径方向外方
に、半導体ウエハとは反応性のない気体を気体供給手段
より洗浄液に吹き付けて行うか、または/および、半導
体ウエハの最外周部から吸引手段により洗浄液を吸引し
て行うものである。
According to a second aspect of the present invention, there is provided a method of cleaning a semiconductor wafer according to the first aspect, wherein the removing means removes the cleaning liquid by radially outwardly reacting the semiconductor wafer with the semiconductor wafer. The cleaning is performed by spraying a gas having no gas on the cleaning liquid from the gas supply means, and / or by suctioning the cleaning liquid from the outermost peripheral portion of the semiconductor wafer by the suction means.

【0009】また、この発明に係る請求項3の半導体ウ
エハの洗浄方法は、請求項2において、洗浄液供給手段
および除去手段が、洗浄時および除去時に半導体ウエハ
の外周部を周回する状態にて動作するものである。
According to a third aspect of the present invention, there is provided a method for cleaning a semiconductor wafer according to the second aspect, wherein the cleaning liquid supply means and the removing means are operated in a state of orbiting the outer peripheral portion of the semiconductor wafer during cleaning and removal. Is what you do.

【0010】また、この発明に係る請求項4の半導体ウ
エハの洗浄方法は、請求項3において、半導体ウエハの
面を水平にし中心軸を垂直として回転させながら行うも
のである。
A semiconductor wafer cleaning method according to a fourth aspect of the present invention is the method according to the third aspect, wherein the semiconductor wafer is rotated while the surface of the semiconductor wafer is horizontal and the center axis is vertical.

【0011】また、この発明に係る請求項5の半導体ウ
エハの洗浄方法は、請求項3において、半導体ウエハの
面を垂直にし中心軸を水平として回転させながら行い、
洗浄液供給手段による洗浄液の供給を垂直状態の半導体
ウエハの下端にて行うものである。
A semiconductor wafer cleaning method according to a fifth aspect of the present invention is the method according to the third aspect, wherein the method is performed while rotating the semiconductor wafer with the surface thereof being vertical and the central axis being horizontal.
The supply of the cleaning liquid by the cleaning liquid supply means is performed at the lower end of the semiconductor wafer in a vertical state.

【0012】また、この発明に係る請求項6の半導体ウ
エハ洗浄装置は、洗浄液を半導体ウエハの外周部に供給
する洗浄液供給手段と、洗浄液供給手段の近傍に形成さ
れ、半導体ウエハの外周部の洗浄液の供給される領域よ
り若干広い領域を対象にして洗浄液を除去する除去手段
と、洗浄液供給手段にて洗浄液が供給された後直ちに洗
浄液の除去が行われるように除去手段を制御する制御手
段とを備えたものである。
According to a sixth aspect of the present invention, there is provided a semiconductor wafer cleaning apparatus for supplying a cleaning liquid to an outer peripheral portion of a semiconductor wafer, and a cleaning liquid formed in the vicinity of the cleaning liquid supplying device for cleaning an outer peripheral portion of the semiconductor wafer. Removing means for removing the cleaning liquid for an area slightly larger than the area to which the cleaning liquid is supplied, and control means for controlling the removing means so that the cleaning liquid is removed immediately after the cleaning liquid is supplied by the cleaning liquid supply means. It is provided.

【0013】また、この発明に係る請求項7の半導体ウ
エハ洗浄装置は、請求項6において、除去手段は、半導
体ウエハの径方向外方に半導体ウエハとは反応性のない
気体を洗浄液に吹き付ける気体供給手段、または/およ
び、半導体ウエハの最外周部から洗浄液の吸引を行う吸
引手段にてなるものである。
According to a seventh aspect of the present invention, there is provided the semiconductor wafer cleaning apparatus according to the sixth aspect, wherein the removing means blows a gas having no reactivity with the semiconductor wafer to the cleaning liquid radially outward of the semiconductor wafer. The supply means and / or suction means for sucking the cleaning liquid from the outermost peripheral portion of the semiconductor wafer.

【0014】また、この発明に係る請求項8の半導体ウ
エハ洗浄装置は、請求項6または請求項7において、洗
浄液供給手段および除去手段が、半導体ウエハの外周部
を周回する状態で動作させるための移動手段を備えたも
のである。
According to an eighth aspect of the present invention, there is provided a semiconductor wafer cleaning apparatus according to the sixth or seventh aspect, wherein the cleaning liquid supply means and the removal means are operated in a state of orbiting the outer periphery of the semiconductor wafer. It is provided with moving means.

【0015】また、この発明に係る請求項9の半導体ウ
エハ洗浄装置は、請求項8において、移動手段は、半導
体ウエハの面を水平に保持し、半導体ウエハの中心軸を
垂直として回転させるものである。
According to a ninth aspect of the present invention, in the semiconductor wafer cleaning apparatus of the eighth aspect, the moving means rotates the semiconductor wafer while keeping the surface of the semiconductor wafer horizontal and the center axis of the semiconductor wafer being vertical. is there.

【0016】また、この発明に係る請求項10の半導体
ウエハ洗浄装置は、請求項8において、移動手段は、半
導体ウエハの面を垂直に保持し、半導体ウエハの中心軸
を水平として回転させ、洗浄液供給手段は垂直状態の半
導体ウエハの下端にて洗浄液の供給を行うものである。
According to a tenth aspect of the present invention, in the semiconductor wafer cleaning apparatus according to the eighth aspect, the moving means holds the surface of the semiconductor wafer vertically, rotates the semiconductor wafer with the center axis of the semiconductor wafer horizontal, and rotates the semiconductor wafer. The supply means supplies the cleaning liquid at the lower end of the vertical semiconductor wafer.

【0017】また、この発明に係る請求項11の半導体
ウエハ洗浄装置は、請求項6ないし請求項10のいずれ
かにおいて、洗浄液供給手段は、洗浄液を含ませた保持
体を備え、保持体にて半導体ウエハの外周部を挟持して
半導体ウエハの外周部に洗浄液を供給するものである。
According to an eleventh aspect of the present invention, there is provided a semiconductor wafer cleaning apparatus according to any one of the sixth to tenth aspects, wherein the cleaning liquid supply means includes a holder containing a cleaning liquid. The cleaning liquid is supplied to the outer peripheral portion of the semiconductor wafer while sandwiching the outer peripheral portion of the semiconductor wafer.

【0018】[0018]

【発明の実施の形態】実施の形態1.以下、この発明の
実施の形態について説明する。図1はこの発明における
実施の形態1の半導体ウエハ洗浄装置の構成を示した
図、図2はこの発明における実施の形態1の半導体ウエ
ハの洗浄方法を説明するための模式図である。図におい
て、12は洗浄液が貯留されている洗浄液タンク、13
はこの洗浄液タンク12の洗浄液を半導体ウエハ14の
表面および裏面のそれぞれの外周部に供給する洗浄液ノ
ズルで、これら洗浄液タンク12と洗浄液ノズル13と
にて洗浄液供給手段15が構成される。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiment 1 Hereinafter, embodiments of the present invention will be described. FIG. 1 is a diagram showing a configuration of a semiconductor wafer cleaning apparatus according to a first embodiment of the present invention, and FIG. 2 is a schematic diagram for explaining a semiconductor wafer cleaning method according to the first embodiment of the present invention. In the figure, reference numeral 12 denotes a cleaning liquid tank in which a cleaning liquid is stored;
Is a cleaning liquid nozzle for supplying the cleaning liquid in the cleaning liquid tank 12 to the outer peripheral portions of the front and back surfaces of the semiconductor wafer 14, respectively. The cleaning liquid tank 12 and the cleaning liquid nozzle 13 constitute a cleaning liquid supply means 15.

【0019】16は洗浄液ノズル13の近傍に形成さ
れ、半導体ウエハ14の外周部の洗浄液の供給される領
域より若干広い領域を対象にして洗浄液を除去する除去
手段としての気体供給手段で、半導体ウエハ14の径方
向外方に半導体ウエハ14と反応性のない気体を吹き付
ける気体ノズル17と、この気体ノズル17に供給する
気体を貯蔵している気体タンク18とにて構成されてい
る。尚、ここで用いられる気体は例えば不活性ガスであ
るチッ素、アルゴンなどの乾燥気体を用いることが考え
られる。
A gas supply means 16 is formed near the cleaning liquid nozzle 13 and serves as a removing means for removing the cleaning liquid from an outer peripheral portion of the semiconductor wafer 14 in an area slightly larger than the area to which the cleaning liquid is supplied. The gas nozzle 17 blows a gas having no reactivity with the semiconductor wafer 14 to the outside in the radial direction of the semiconductor wafer 14, and the gas tank 18 stores the gas supplied to the gas nozzle 17. The gas used here may be a dry gas such as an inert gas such as nitrogen or argon.

【0020】この際、洗浄液を除去する領域を、洗浄液
の供給される領域より若干広い領域を対象にするため気
体ノズル17は洗浄液ノズル13より若干半導体ウエハ
14の内周側に設置されている。また、気体ノズル17
は半導体ウエハ14の表面および裏面の洗浄液ノズル1
3の近傍にそれぞれ設けられている。
At this time, the gas nozzle 17 is provided slightly inside the semiconductor wafer 14 from the cleaning liquid nozzle 13 in order to target the area for removing the cleaning liquid to be a slightly larger area than the area to which the cleaning liquid is supplied. The gas nozzle 17
Is the cleaning liquid nozzle 1 on the front and back surfaces of the semiconductor wafer 14
3 are provided in the vicinity.

【0021】19は洗浄液供給手段15および気体供給
手段16に例えばバルブ等を介してそれぞれ接続されて
いる制御手段で、洗浄液供給手段15の洗浄液の供給を
例えばバルブの開閉により制御するとともに、洗浄液供
給手段15が洗浄液を半導体ウエハ14に供給した後直
ちに洗浄液の除去が行われるように気体供給手段16を
例えばバルブの開閉により制御する。20は洗浄液ノズ
ル13および気体ノズル17が、半導体ウエハ14の外
周部を周回する状態で動作させるための移動手段で、こ
こでは半導体ウエハ14の面を水平に保持し、半導体ウ
エハ14の中心軸を垂直として回転させる回転手段にて
なる。
Reference numeral 19 denotes control means connected to the cleaning liquid supply means 15 and the gas supply means 16 via, for example, a valve or the like. The control means 19 controls the supply of the cleaning liquid from the cleaning liquid supply means 15 by, for example, opening and closing a valve. The gas supply means 16 is controlled by, for example, opening and closing a valve so that the cleaning liquid is removed immediately after the means 15 supplies the cleaning liquid to the semiconductor wafer 14. Reference numeral 20 denotes moving means for operating the cleaning liquid nozzle 13 and the gas nozzle 17 in a state of rotating around the outer peripheral portion of the semiconductor wafer 14. Here, the surface of the semiconductor wafer 14 is horizontally held, and the center axis of the semiconductor wafer 14 is It consists of rotating means to rotate as vertical.

【0022】次に上記のように構成された実施の形態1
の半導体ウエハ洗浄装置を用いた、半導体ウエハの洗浄
方法について説明する。まず、回転手段20上に面を水
平にして半導体ウエハ14を載置し、回転手段20によ
り半導体ウエハ14の中心軸を垂直として回転させる。
次に、制御手段19により、洗浄液ノズル13から半導
体ウエハ14の外周部に洗浄液を供給させる。
Next, the first embodiment configured as described above
A method for cleaning a semiconductor wafer using the semiconductor wafer cleaning apparatus described above will be described. First, the semiconductor wafer 14 is placed on the rotating means 20 with the surface horizontal, and the rotating means 20 rotates the semiconductor wafer 14 with the center axis of the semiconductor wafer 14 being vertical.
Next, the cleaning liquid is supplied from the cleaning liquid nozzle 13 to the outer peripheral portion of the semiconductor wafer 14 by the control means 19.

【0023】そして洗浄液が半導体ウエハ14に供給さ
れると直ちに制御手段19は気体供給手段16を動作さ
せ、洗浄液の供給された領域より若干広い領域が対象と
なるように気体を径方向外方に吹き付け洗浄液の除去を
行う(図2参照)。そして、半導体ウエハ14を回転さ
せながら半導体ウエハ14の外周部の全周全てに対して
上記洗浄を連続的に行っていく。尚、洗浄とは、有機
物、金属等の除去および異物の除去などが含まれる。
Immediately after the cleaning liquid is supplied to the semiconductor wafer 14, the control means 19 operates the gas supply means 16 to radiate the gas radially outward so as to cover an area slightly larger than the area to which the cleaning liquid is supplied. The spray cleaning liquid is removed (see FIG. 2). Then, while the semiconductor wafer 14 is being rotated, the above-described cleaning is continuously performed on the entire outer periphery of the semiconductor wafer 14. Note that cleaning includes removal of organic substances, metals, and the like, removal of foreign substances, and the like.

【0024】上記のように構成された実施の形態1の半
導体ウエハ洗浄装置を用い上記に示した半導体ウエハの
洗浄方法を行えば、半導体ウエハの外周部に供給された
洗浄液を、供給後直ちに除去しているため、半導体ウエ
ハの内周側に洗浄液が侵入することを確実に防止するこ
とができ、半導体ウエハの品質が低下することを防止す
ることができる。
If the above-described semiconductor wafer cleaning method is performed using the semiconductor wafer cleaning apparatus of the first embodiment configured as described above, the cleaning liquid supplied to the outer peripheral portion of the semiconductor wafer is immediately removed after the supply. Therefore, it is possible to reliably prevent the cleaning liquid from entering the inner peripheral side of the semiconductor wafer, and to prevent the quality of the semiconductor wafer from deteriorating.

【0025】上記実施の形態1においては、洗浄液を半
導体ウエハの表面および裏面の両方に供給する例を示し
たがこれに限られることはなく、半導体ウエハの表面の
みに供給する例も考えられる。しかし、洗浄液を半導体
ウエハの表面のみに供給しても、半導体ウエハの外周部
においては、表面側から裏面側に洗浄液がまわりこむた
め、除去手段は、表面および裏面ともに設置する必要が
ある。
In the first embodiment, an example in which the cleaning liquid is supplied to both the front surface and the rear surface of the semiconductor wafer has been described. However, the present invention is not limited to this, and an example in which the cleaning liquid is supplied only to the front surface of the semiconductor wafer can be considered. However, even if the cleaning liquid is supplied only to the front surface of the semiconductor wafer, the cleaning liquid flows from the front side to the rear side at the outer peripheral portion of the semiconductor wafer.

【0026】実施の形態2.上記実施の形態1では、除
去手段を、気体供給手段にて形成する例を示したがこれ
に限られることはなく、他の例として図3に示すものが
考えられる。洗浄液ノズル13の近傍に形成され、半導
体ウエハ14の外周部の洗浄液の供給される領域より若
干広い領域を対象にして洗浄液を除去する除去手段とし
ての吸引手段21を備える。そしてこの吸引手段21は
半導体ウエハ14の最外周部から洗浄液の吸引を行う吸
引ノズル22と、この吸引状態を形成する吸引機構23
とにて構成されている。この際、半導体ウエハ14の最
外周部から洗浄液の吸引を行うので吸引ノズル22は1
つのノズルにて半導体ウエハ14の表面および裏面の洗
浄液の除去を行うことができる。
Embodiment 2 FIG. In the first embodiment, the example in which the removing means is formed by the gas supply means has been described. However, the present invention is not limited to this, and another example shown in FIG. 3 can be considered. A suction unit 21 is formed near the cleaning liquid nozzle 13 and removes the cleaning liquid from an outer peripheral portion of the semiconductor wafer 14 in a region slightly larger than a region to which the cleaning liquid is supplied. The suction means 21 includes a suction nozzle 22 for suctioning the cleaning liquid from the outermost peripheral portion of the semiconductor wafer 14 and a suction mechanism 23 for forming the suction state.
It is composed of At this time, since the cleaning liquid is sucked from the outermost peripheral portion of the semiconductor wafer 14, the suction nozzle 22 is set at 1
The cleaning liquid on the front surface and the back surface of the semiconductor wafer 14 can be removed with one nozzle.

【0027】24は洗浄液供給手段15および吸引手段
21に例えばバルブ等を介してそれぞれ接続されている
制御手段で、洗浄液供給手段15の洗浄液の供給を例え
ばバルブの開閉により制御するとともに、洗浄液供給手
段15が洗浄液を半導体ウエハ14に供給した後直ちに
洗浄液の除去が行われるように吸引手段21を例えばバ
ルブの開閉により制御する。
Numeral 24 denotes control means connected to the cleaning liquid supply means 15 and the suction means 21 via, for example, a valve or the like. The control means 24 controls the supply of the cleaning liquid from the cleaning liquid supply means 15 by, for example, opening and closing a valve. The suction means 21 is controlled by, for example, opening and closing a valve so that the cleaning liquid is removed immediately after the cleaning liquid 15 is supplied to the semiconductor wafer 14.

【0028】上記のように構成された実施の形態2の半
導体ウエハ洗浄装置を用いた、半導体ウエハの洗浄方法
について説明する。まず、上記実施の形態1と同様に、
回転手段20上に面を水平にして半導体ウエハ14を載
置し、回転手段20により半導体ウエハ14の中心軸を
垂直として回転させる。次に、制御手段24により、洗
浄液供給手段13から半導体ウエハ14の外周部に洗浄
液を供給させる。
A method for cleaning a semiconductor wafer using the semiconductor wafer cleaning apparatus of the second embodiment configured as described above will be described. First, similarly to the first embodiment,
The semiconductor wafer 14 is placed on the rotating means 20 with the surface horizontal, and the rotating means 20 rotates the semiconductor wafer 14 with the central axis of the semiconductor wafer 14 being vertical. Next, the cleaning liquid is supplied from the cleaning liquid supply means 13 to the outer peripheral portion of the semiconductor wafer 14 by the control means 24.

【0029】そして洗浄液が半導体ウエハ14に供給さ
れると直ちに制御手段24は吸引手段21を動作させ、
洗浄液の供給された領域より若干広い領域が対象となる
ように洗浄液の吸引を行い除去する。そして、半導体ウ
エハ14を回転させながら半導体ウエハ14の外周部の
全周全てに対して上記洗浄を連続的に行っていく。
As soon as the cleaning liquid is supplied to the semiconductor wafer 14, the control means 24 activates the suction means 21.
The cleaning liquid is sucked and removed so that an area slightly larger than the area to which the cleaning liquid is supplied is targeted. Then, while the semiconductor wafer 14 is being rotated, the above-described cleaning is continuously performed on the entire outer periphery of the semiconductor wafer 14.

【0030】上記のように構成された実施の形態2の半
導体ウエハ洗浄装置を用い上記に示した半導体ウエハの
洗浄方法を行えば、上記実施の形態1と同様に、半導体
ウエハの外周部に供給された洗浄液を、供給後直ちに除
去しているため、半導体ウエハの内周側に洗浄液が侵入
することを確実に防止することができ、半導体ウエハの
品質が低下することを防止することができる。さらに、
洗浄液を吸収して除去するため、半導体ウエハ洗浄装置
の他の箇所に、この除去後の洗浄液が飛び散ることを防
止できる。
When the above-described semiconductor wafer cleaning method is performed using the semiconductor wafer cleaning apparatus of the second embodiment configured as described above, the semiconductor wafer is supplied to the outer peripheral portion of the semiconductor wafer in the same manner as in the first embodiment. Since the cleaning liquid thus removed is removed immediately after the supply, the cleaning liquid can be reliably prevented from entering the inner peripheral side of the semiconductor wafer, and the quality of the semiconductor wafer can be prevented from deteriorating. further,
Since the cleaning liquid is absorbed and removed, the cleaning liquid after the removal can be prevented from being scattered to other portions of the semiconductor wafer cleaning apparatus.

【0031】又、上記実施の形態1および2の除去手段
としての、気体供給手段および吸収手段を組み合わせる
例も考えられる。その場合、洗浄液の除去をより一層確
実に行うことができる。
Further, an example in which a gas supply means and an absorption means are combined as the removal means in the first and second embodiments can be considered. In that case, the cleaning liquid can be more reliably removed.

【0032】尚、除去手段としての吸引手段は以下の実
施の形態においても同様に利用することができることは
言うまでもなく、その説明は適宜省略する。
It is needless to say that the suction means as the removing means can be similarly used in the following embodiments, and the description thereof will be omitted as appropriate.

【0033】実施の形態3.上記各実施の形態において
は、洗浄液供給手段による洗浄液の供給を、洗浄液ノズ
ルにて吹き付ける方法にて行う例を示したがこれに限ら
れることはなく、例えば、図4に示すものが考えられ
る。図4は洗浄液供給手段と気体供給手段と半導体ウエ
ハとの関係を模式的に示した図である。図に示すよう
に、洗浄液供給手段は、洗浄液を含ませた保持体25を
備え、保持体25にて半導体ウエハ14の外周部を挟持
して半導体ウエハ14の外周部に洗浄液を供給する。
Embodiment 3 In each of the above embodiments, the example in which the supply of the cleaning liquid by the cleaning liquid supply unit is performed by the method of spraying with the cleaning liquid nozzle has been described. However, the present invention is not limited to this. For example, the one shown in FIG. FIG. 4 is a diagram schematically showing the relationship between the cleaning liquid supply means, the gas supply means, and the semiconductor wafer. As shown in the figure, the cleaning liquid supply means includes a holder 25 containing the cleaning liquid, and supplies the cleaning liquid to the outer periphery of the semiconductor wafer 14 by holding the outer periphery of the semiconductor wafer 14 with the holder 25.

【0034】保持体としては、洗浄液を含ませた状態に
て保持することができるものであればよく、例えばスポ
ンジ、ブラシなどが考えられる。尚、保持体には洗浄液
が常に供給されるように構成されている。又、保持体に
て洗浄液を供給する方法は以下の実施の形態においても
同様に利用することができることは言うまでもなく、そ
の説明は適宜省略する。
The holding member may be any holding member which can hold the cleaning liquid, and for example, a sponge, a brush or the like may be used. The cleaning liquid is always supplied to the holder. In addition, it goes without saying that the method of supplying the cleaning liquid with the holder can be similarly used in the following embodiments, and the description thereof will be omitted as appropriate.

【0035】尚、上記各実施の形態においては、半導体
ウエハを回転させることにより、洗浄液供給手段および
除去手段が、洗浄時および除去時に半導体ウエハの外周
部を周回する状態にて行うように構成したが、これに限
られることはなく、洗浄液供給手段および除去手段が半
導体ウエハの周囲を移動することにより行ってもよいこ
とは言うまでもない。
In each of the above-described embodiments, the semiconductor wafer is rotated so that the cleaning liquid supply means and the removal means perform cleaning and removal while orbiting the outer peripheral portion of the semiconductor wafer. However, the present invention is not limited to this, and it goes without saying that the cleaning liquid supply unit and the removal unit may be moved around the semiconductor wafer.

【0036】実施の形態4.上記各実施の形態において
は、半導体ウエハの面を水平にして行う例を示したがこ
れに限られることはなく、例えば、図5に示すものが考
えられる。図5は半導体ウエハと洗浄液供給手段と気体
供給手段との関係を模式的に示す図である。図に示すよ
うに、移動手段により半導体ウエハ14はその面を垂直
に保持し、半導体ウエハ14の中心軸を水平として回転
させ、洗浄液供給手段26は垂直状態の半導体ウエハ1
4の下端にて洗浄液が供給できるように構成する。そし
て、上記各実施の形態と同様に半導体ウエハ14の洗浄
を行う。
Embodiment 4 FIG. In each of the above embodiments, an example in which the surface of the semiconductor wafer is made horizontal has been described. However, the present invention is not limited to this example. FIG. 5 is a diagram schematically showing the relationship between the semiconductor wafer, the cleaning liquid supply means, and the gas supply means. As shown in the figure, the semiconductor wafer 14 is held vertically by the moving means, and the center axis of the semiconductor wafer 14 is rotated horizontally.
The cleaning liquid can be supplied at the lower end of 4. Then, the semiconductor wafer 14 is cleaned in the same manner as in the above embodiments.

【0037】上記のように構成された実施の形態4の半
導体ウエハ洗浄装置による上記に示した半導体ウエハの
洗浄方法を行えば、上記各実施の形態と同様に、半導体
ウエハの外周部に供給された洗浄液を、供給後直ちに除
去しているため、半導体ウエハの内周側に洗浄液が侵入
することを確実に防止することができ、半導体ウエハの
品質が低下することを防止することができる。さらに、
洗浄液は除去手段ととともに重力による除去も期待でき
るため、より一層確実に洗浄液の除去を行うことができ
る。
When the above-described semiconductor wafer cleaning method using the semiconductor wafer cleaning apparatus of the fourth embodiment configured as described above is performed, the semiconductor wafer is supplied to the outer peripheral portion of the semiconductor wafer in the same manner as in each of the above embodiments. Since the cleaning liquid is removed immediately after the supply, the cleaning liquid can be reliably prevented from entering the inner peripheral side of the semiconductor wafer, and the quality of the semiconductor wafer can be prevented from deteriorating. further,
Since the cleaning liquid can be expected to be removed by gravity together with the removing means, the cleaning liquid can be more reliably removed.

【0038】[0038]

【発明の効果】以上のように、この発明の請求項1によ
れば、半導体ウエハの外周部に洗浄液供給手段より洗浄
液を塗布した後直ちに、洗浄液が塗布された領域より若
干広い領域を対象にして除去手段にて洗浄液を取り除く
ので、半導体ウエハの内部への洗浄液の侵入を防ぐこと
ができる半導体ウエハの洗浄方法を提供することが可能
となる。
As described above, according to the first aspect of the present invention, immediately after the cleaning liquid is applied from the cleaning liquid supply means to the outer peripheral portion of the semiconductor wafer, an area slightly larger than the area where the cleaning liquid is applied is targeted. Since the cleaning liquid is removed by the removing means, it is possible to provide a semiconductor wafer cleaning method capable of preventing the cleaning liquid from entering the inside of the semiconductor wafer.

【0039】また、この発明の請求項2によれば、請求
項1において、除去手段にて洗浄液を取り除く方法とし
て、半導体ウエハの径方向外方に、半導体ウエハとは反
応性のない気体を気体供給手段より洗浄液に吹き付けて
行うか、または/および、半導体ウエハの最外周部から
吸引手段により洗浄液を吸引して行うので、洗浄液を確
実に除去することができる半導体ウエハの洗浄方法を提
供することが可能となる。
According to a second aspect of the present invention, in the first aspect, as the method for removing the cleaning liquid by the removing means, a gas that is not reactive with the semiconductor wafer is provided radially outward of the semiconductor wafer. The present invention provides a method for cleaning a semiconductor wafer, which can be performed by spraying the cleaning liquid from a supply unit or / and by suctioning the cleaning liquid from the outermost peripheral portion of the semiconductor wafer by a suction unit. Becomes possible.

【0040】また、この発明の請求項3によれば、請求
項2において、洗浄液供給手段および除去手段が、洗浄
時および除去時に半導体ウエハの外周部を周回する状態
にて動作するので、半導体ウエハの外周部の全てを洗浄
することができる半導体ウエハの洗浄方法を提供するこ
とが可能となる。
According to a third aspect of the present invention, in the second aspect, the cleaning liquid supply means and the removing means operate in a state of circling the outer peripheral portion of the semiconductor wafer during cleaning and removal. It is possible to provide a semiconductor wafer cleaning method capable of cleaning the entire outer peripheral portion of the semiconductor wafer.

【0041】また、この発明の請求項4によれば、請求
項3において、半導体ウエハの面を水平にし中心軸を垂
直として回転させながら行うので、半導体ウエハの外周
部の全てを確実に洗浄することができる半導体ウエハの
洗浄方法を提供することが可能となる。
According to a fourth aspect of the present invention, in the third aspect, the cleaning is performed while the surface of the semiconductor wafer is horizontal and the center axis is vertical, so that the entire outer peripheral portion of the semiconductor wafer is reliably cleaned. It is possible to provide a method for cleaning a semiconductor wafer that can be performed.

【0042】また、この発明の請求項5によれば、請求
項3において、半導体ウエハの面を垂直にし中心軸を水
平として回転させながら行い、洗浄液供給手段による洗
浄液の供給を垂直状態の半導体ウエハの下端にて行うの
で、半導体ウエハの外周部の全てを確実に洗浄すること
ができる半導体ウエハの洗浄方法を提供することが可能
となる。
According to a fifth aspect of the present invention, in the third aspect, the semiconductor wafer is rotated while the surface of the semiconductor wafer is vertical and the center axis is horizontal, and the supply of the cleaning liquid by the cleaning liquid supply means is performed in a vertical state. Since the cleaning is performed at the lower end of the semiconductor wafer, it is possible to provide a semiconductor wafer cleaning method capable of reliably cleaning the entire outer peripheral portion of the semiconductor wafer.

【0043】また、この発明の請求項6によれば、洗浄
液を半導体ウエハの外周部に供給する洗浄液供給手段
と、洗浄液供給手段の近傍に形成され、半導体ウエハの
外周部の洗浄液の供給される領域より若干広い領域を対
象にして洗浄液を除去する除去手段と、洗浄液供給手段
にて洗浄液が供給された後直ちに洗浄液の除去が行われ
るように除去手段を制御する制御手段とを備えたので、
半導体ウエハの内部への洗浄液の侵入を防ぐことができ
る半導体ウエハ洗浄装置を提供することが可能となる。
According to a sixth aspect of the present invention, a cleaning liquid supply means for supplying a cleaning liquid to the outer peripheral portion of the semiconductor wafer, and a cleaning liquid formed near the cleaning liquid supply means for supplying the cleaning liquid to the outer peripheral portion of the semiconductor wafer. Since there is provided a removing means for removing the cleaning liquid for an area slightly larger than the area and a control means for controlling the removing means so that the cleaning liquid is removed immediately after the cleaning liquid is supplied by the cleaning liquid supply means,
It is possible to provide a semiconductor wafer cleaning apparatus capable of preventing a cleaning liquid from entering a semiconductor wafer.

【0044】また、この発明の請求項7によれば、請求
項6において、除去手段は、半導体ウエハの径方向外方
に半導体ウエハとは反応性のない気体を洗浄液に吹き付
ける気体供給手段、または/および、半導体ウエハの最
外周部から洗浄液の吸引を行う吸引手段にてなるので、
洗浄液を確実に除去することができる半導体ウエハ洗浄
装置を提供することが可能となる。
According to a seventh aspect of the present invention, in the sixth aspect, the removing means is a gas supply means for blowing a gas having no reactivity with the semiconductor wafer to the cleaning liquid radially outward of the semiconductor wafer, or And / or suction means for sucking the cleaning liquid from the outermost peripheral portion of the semiconductor wafer,
It is possible to provide a semiconductor wafer cleaning apparatus capable of reliably removing a cleaning liquid.

【0045】また、この発明の請求項8によれば、請求
項6または請求項7において、洗浄液供給手段および除
去手段が、半導体ウエハの外周部を周回する状態で動作
させるための移動手段を備えたので、半導体ウエハの外
周部全てを洗浄することができる半導体ウエハ洗浄装置
を提供することが可能となる。
According to an eighth aspect of the present invention, in the sixth or seventh aspect, the cleaning liquid supply means and the removal means are provided with moving means for operating in a state of rotating around the outer peripheral portion of the semiconductor wafer. Therefore, it is possible to provide a semiconductor wafer cleaning apparatus capable of cleaning the entire outer peripheral portion of the semiconductor wafer.

【0046】また、この発明の請求項9によれば、請求
項8において、移動手段は、半導体ウエハの面を水平に
保持し、半導体ウエハの中心軸を垂直として回転させる
ので、半導体ウエハの外周部全てを確実に洗浄すること
ができる半導体ウエハ洗浄装置を提供することが可能と
なる。
According to a ninth aspect of the present invention, in the eighth aspect, the moving means holds the surface of the semiconductor wafer horizontally and rotates the semiconductor wafer with the center axis of the semiconductor wafer vertical, so that the outer periphery of the semiconductor wafer is rotated. It is possible to provide a semiconductor wafer cleaning apparatus capable of reliably cleaning all parts.

【0047】また、この発明の請求項10によれば、請
求項8において、移動手段は、半導体ウエハの面を垂直
に保持し、半導体ウエハの中心軸を水平として回転さ
せ、洗浄液供給手段は垂直状態の半導体ウエハの下端に
て洗浄液の供給を行うので、半導体ウエハの外周部全て
を確実に洗浄することができる半導体ウエハ洗浄装置を
提供することが可能となる。
According to a tenth aspect of the present invention, in the eighth aspect, the moving means holds the surface of the semiconductor wafer vertically, rotates the semiconductor wafer with the central axis being horizontal, and the cleaning liquid supply means has a vertical position. Since the cleaning liquid is supplied at the lower end of the semiconductor wafer in the state, it is possible to provide a semiconductor wafer cleaning apparatus capable of reliably cleaning the entire outer peripheral portion of the semiconductor wafer.

【0048】また、この発明の請求項11によれば、請
求項6ないし請求項10のいずれかにおいて、洗浄液供
給手段は、洗浄液を含ませた保持体を備え、保持体にて
半導体ウエハの外周部を挟持して半導体ウエハの外周部
に洗浄液を供給するので、半導体ウエハの外周部を洗浄
することができる半導体ウエハ洗浄装置を提供すること
が可能となる。
According to an eleventh aspect of the present invention, in any one of the sixth to tenth aspects, the cleaning liquid supply means includes a holding member containing the cleaning liquid, and the holding member includes an outer periphery of the semiconductor wafer. Since the cleaning liquid is supplied to the outer peripheral portion of the semiconductor wafer while holding the portion, the semiconductor wafer cleaning apparatus capable of cleaning the outer peripheral portion of the semiconductor wafer can be provided.

【図面の簡単な説明】[Brief description of the drawings]

【図1】 この発明の実施の形態1による半導体ウエハ
洗浄装置の構成を示す図である。
FIG. 1 is a diagram showing a configuration of a semiconductor wafer cleaning apparatus according to a first embodiment of the present invention.

【図2】 図1に示した半導体ウエハ洗浄装置の詳細を
示す模式図である。
FIG. 2 is a schematic diagram showing details of the semiconductor wafer cleaning apparatus shown in FIG.

【図3】 この発明の実施の形態2による半導体ウエハ
洗浄装置の構成を示す図である。
FIG. 3 is a diagram showing a configuration of a semiconductor wafer cleaning apparatus according to a second embodiment of the present invention.

【図4】 この発明の実施の形態3による半導体ウエハ
洗浄装置の構成を模式的に示す図である。
FIG. 4 is a diagram schematically showing a configuration of a semiconductor wafer cleaning apparatus according to a third embodiment of the present invention.

【図5】 この発明の実施の形態4による半導体ウエハ
洗浄装置の構成を模式的に示す図である。
FIG. 5 is a diagram schematically showing a configuration of a semiconductor wafer cleaning apparatus according to a fourth embodiment of the present invention.

【図6】 従来の半導体ウエハ洗浄装置の構成を示す図
である。
FIG. 6 is a diagram showing a configuration of a conventional semiconductor wafer cleaning apparatus.

【符号の説明】[Explanation of symbols]

14 半導体ウエハ、15,26 洗浄液供給手段、1
6 気体供給手段、19,24 制御手段、20 回転
手段、21 吸引手段、25 保持体。
14 semiconductor wafer, 15, 26 cleaning liquid supply means, 1
6 gas supply means, 19, 24 control means, 20 rotation means, 21 suction means, 25 holder.

Claims (11)

【特許請求の範囲】[Claims] 【請求項1】 半導体ウエハの外周部に洗浄液供給手段
より洗浄液を塗布した後直ちに、上記洗浄液が塗布され
た領域より若干広い領域を対象にして除去手段にて上記
洗浄液を取り除くことを特徴とする半導体ウエハの洗浄
方法。
The cleaning liquid is applied to an outer peripheral portion of the semiconductor wafer by a cleaning means immediately after the cleaning liquid is applied by a cleaning liquid supply means, and the cleaning liquid is removed from a region slightly larger than an area where the cleaning liquid is applied. A method for cleaning a semiconductor wafer.
【請求項2】 除去手段にて洗浄液を取り除く方法とし
て、半導体ウエハの径方向外方に、上記半導体ウエハと
は反応性のない気体を気体供給手段より上記洗浄液に吹
き付けて行うか、または/および、上記半導体ウエハの
最外周部から吸引手段により上記洗浄液を吸引して行う
ことを特徴とする請求項1に記載の半導体ウエハの洗浄
方法。
2. A method of removing a cleaning liquid by a removing means, wherein a gas having no reactivity with the semiconductor wafer is sprayed on a radial direction of the semiconductor wafer from a gas supply means to the cleaning liquid, and / or 2. The method for cleaning a semiconductor wafer according to claim 1, wherein the cleaning liquid is suctioned from an outermost peripheral portion of the semiconductor wafer by suction means.
【請求項3】 洗浄液供給手段および除去手段が、洗浄
時および除去時に半導体ウエハの外周部を周回する状態
にて動作することを特徴とする請求項1または請求項2
に記載の半導体ウエハの洗浄方法。
3. The cleaning liquid supply means and the removal means operate in a state of circling the outer peripheral portion of the semiconductor wafer during cleaning and removal.
3. The method for cleaning a semiconductor wafer according to item 2.
【請求項4】 半導体ウエハの面を水平にし中心軸を垂
直として回転させながら行うことを特徴とする請求項3
に記載の半導体ウエハの洗浄方法。
4. The method according to claim 3, wherein the rotation is performed while the surface of the semiconductor wafer is horizontal and the center axis is vertical.
3. The method for cleaning a semiconductor wafer according to item 2.
【請求項5】 半導体ウエハの面を垂直にし中心軸を水
平として回転させながら行い、洗浄液供給手段による洗
浄液の供給を垂直状態の上記半導体ウエハの下端にて行
うことを特徴とする請求項3に記載の半導体ウエハの洗
浄方法。
5. The method according to claim 3, wherein the cleaning liquid is supplied by a cleaning liquid supply means at a lower end of the semiconductor wafer in a vertical state while the semiconductor wafer is rotated while the surface of the semiconductor wafer is vertical and the central axis is horizontal. The method for cleaning a semiconductor wafer according to the above.
【請求項6】 洗浄液を半導体ウエハの外周部に供給す
る洗浄液供給手段と、上記洗浄液供給手段の近傍に形成
され、上記半導体ウエハの外周部の上記洗浄液の供給さ
れる領域より若干広い領域を対象にして上記洗浄液を除
去する除去手段と、上記洗浄液供給手段にて上記洗浄液
が供給された後直ちに上記洗浄液の除去が行われるよう
に上記除去手段を制御する制御手段とを備えたことを特
徴とする半導体ウエハ洗浄装置。
6. A cleaning liquid supply means for supplying a cleaning liquid to an outer peripheral portion of a semiconductor wafer, and an area formed in the vicinity of the cleaning liquid supply means and which is slightly larger than an area of the outer peripheral portion of the semiconductor wafer to which the cleaning liquid is supplied. Removing means for removing the cleaning liquid, and control means for controlling the removing means so that the cleaning liquid is removed immediately after the cleaning liquid is supplied by the cleaning liquid supply means. Semiconductor wafer cleaning equipment.
【請求項7】 除去手段は、半導体ウエハの径方向外方
に上記半導体ウエハとは反応性のない気体を洗浄液に吹
き付ける気体供給手段、または/および、上記半導体ウ
エハの最外周部から上記洗浄液の吸引を行う吸引手段に
てなることを特徴とする請求項6に記載の半導体ウエハ
洗浄装置。
7. The removing means comprises: a gas supply means for blowing a gas having no reactivity with the semiconductor wafer to the cleaning liquid radially outward of the semiconductor wafer; and / or a gas supply means for supplying the cleaning liquid from the outermost peripheral portion of the semiconductor wafer. 7. The semiconductor wafer cleaning apparatus according to claim 6, comprising suction means for performing suction.
【請求項8】 洗浄液供給手段および除去手段が、半導
体ウエハの外周部を周回する状態で動作させるための移
動手段を備えたことを特徴とする請求項6または請求項
7に記載の半導体ウエハ洗浄装置。
8. The cleaning of a semiconductor wafer according to claim 6, wherein the cleaning liquid supply means and the removing means have a moving means for operating the semiconductor wafer in a state of orbiting the outer periphery of the semiconductor wafer. apparatus.
【請求項9】 移動手段は、半導体ウエハの面を水平に
保持し、上記半導体ウエハの中心軸を垂直として回転さ
せることを特徴とする請求項8に記載の半導体ウエハ洗
浄装置。
9. The semiconductor wafer cleaning apparatus according to claim 8, wherein the moving means holds the surface of the semiconductor wafer horizontally, and rotates the semiconductor wafer with the central axis of the semiconductor wafer being vertical.
【請求項10】 移動手段は、半導体ウエハの面を垂直
に保持し、上記半導体ウエハの中心軸を水平として回転
させ、洗浄液供給手段は垂直状態の上記半導体ウエハの
下端にて上記洗浄液の供給を行うことを特徴とする請求
項8に記載の半導体ウエハ洗浄装置。
10. A moving means for holding the surface of the semiconductor wafer vertically, rotating the semiconductor wafer with the center axis thereof being horizontal, and a cleaning liquid supply means for supplying the cleaning liquid at a lower end of the semiconductor wafer in a vertical state. 9. The semiconductor wafer cleaning apparatus according to claim 8, wherein the cleaning is performed.
【請求項11】 洗浄液供給手段は、洗浄液を含ませた
保持体を備え、上記保持体にて半導体ウエハの外周部を
挟持して上記半導体ウエハの外周部に上記洗浄液を供給
することを特徴とする請求項6ないし請求項10のいず
れかに記載の半導体ウエハ洗浄装置。
11. A cleaning liquid supply means comprising a holder containing a cleaning liquid, wherein the holder holds an outer peripheral portion of a semiconductor wafer and supplies the cleaning liquid to an outer peripheral portion of the semiconductor wafer. The semiconductor wafer cleaning apparatus according to any one of claims 6 to 10, wherein:
JP2000224973A 2000-07-26 2000-07-26 Semiconductor wafer cleaning method and apparatus Pending JP2002043265A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000224973A JP2002043265A (en) 2000-07-26 2000-07-26 Semiconductor wafer cleaning method and apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000224973A JP2002043265A (en) 2000-07-26 2000-07-26 Semiconductor wafer cleaning method and apparatus

Publications (1)

Publication Number Publication Date
JP2002043265A true JP2002043265A (en) 2002-02-08

Family

ID=18718822

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000224973A Pending JP2002043265A (en) 2000-07-26 2000-07-26 Semiconductor wafer cleaning method and apparatus

Country Status (1)

Country Link
JP (1) JP2002043265A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015106701A (en) * 2013-12-03 2015-06-08 株式会社Screenホールディングス Substrate processing apparatus
US10835932B2 (en) 2013-12-03 2020-11-17 SCREEN Holdings Co., Ltd. Substrate processing apparatus and substrate processing method
JP2021044301A (en) * 2019-09-09 2021-03-18 三菱電機株式会社 Wafer cleaning device and manufacturing method of semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015106701A (en) * 2013-12-03 2015-06-08 株式会社Screenホールディングス Substrate processing apparatus
US10835932B2 (en) 2013-12-03 2020-11-17 SCREEN Holdings Co., Ltd. Substrate processing apparatus and substrate processing method
JP2021044301A (en) * 2019-09-09 2021-03-18 三菱電機株式会社 Wafer cleaning device and manufacturing method of semiconductor device
JP7170608B2 (en) 2019-09-09 2022-11-14 三菱電機株式会社 WAFER CLEANING APPARATUS AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

Similar Documents

Publication Publication Date Title
JP3993048B2 (en) Substrate processing equipment
JP3563605B2 (en) Processing equipment
JP4757126B2 (en) Substrate processing method and substrate processing apparatus
JP4976949B2 (en) Substrate processing equipment
JP2003209087A (en) Substrate treatment device
US10058900B2 (en) Substrate processing apparatus and substrate processing method
JP2004006618A (en) Substrate processing apparatus and method
US20010003967A1 (en) Coating film forming apparatus
JP5390873B2 (en) Substrate processing method and substrate processing apparatus
JP2001319908A (en) Wet processing method and device
JP2001319849A (en) Liquid processing device and liquid processing method
JP4057396B2 (en) Substrate processing equipment
CN113471108B (en) Vertical rotatory processing apparatus of wafer based on marangoni effect
JP2002273360A (en) Substrate treating device
JP2001319910A (en) Liquid processing device
JP4255702B2 (en) Substrate processing apparatus and method
JP2005286221A (en) Apparatus and method for treating substrate
JPH1126547A (en) Wet treatment device
JP2002043265A (en) Semiconductor wafer cleaning method and apparatus
JPH09298181A (en) Substrate rear surface washer
JP2002359227A (en) Substrate treatment apparatus and method
JPH0766116A (en) Coater
JP3934745B2 (en) Substrate transfer unit and wet processing apparatus using the same
JP2004022783A (en) Treatment device
JP4540457B2 (en) Substrate processing equipment

Legal Events

Date Code Title Description
RD01 Notification of change of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7421

Effective date: 20060123