JP2015106701A - Substrate processing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a cleaning art capable of cleaning a processing region more successfully while inhibiting adhesion of a process liquid to a region on a top face of a substrate other than a peripheral part of the top face.SOLUTION: A substrate processing apparatus comprises: a substrate rotation mechanism for holding and rotating a substrate; a discharge part for discharging a process liquid on a processing region on a top face of the substrate rotated by the substrate rotation mechanism, in a predetermined width from a periphery of the substrate; and a cleaning part for cleaning the processing region by being brought into contact with the processing region of the substrate rotated by the substrate rotation mechanism. The discharge part discharge the process liquid toward a main discharge region preliminarily defined in a semi-annular region on a downstream side with respect to the cleaning part in a rotation direction of the substrate in a rotation track in the processing region.

Description

  The present invention relates to a substrate processing technique for cleaning a peripheral portion of a substrate with a cleaning member such as a brush.

  As a substrate processing apparatus that performs such processing, for example, in Patent Document 1, the processing liquid is supplied to the peripheral portion by bringing a sponge member soaked with the processing liquid into the peripheral portion of the substrate, while the processing liquid is supplied to the peripheral portion. A substrate processing apparatus is disclosed that cleans a peripheral edge by bringing a brush into contact with the peripheral edge at a position different from the sponge member.

JP 2009-164405 A

  However, in the substrate processing apparatus of Patent Document 1, since the processing liquid is oozed out from the sponge member and supplied to the peripheral portion, the processing liquid is insufficient and the peripheral portion is not sufficiently cleaned and is scraped off by the brush. There is a problem that the pollutants cannot be cleaned sufficiently.

  The present invention has been made to solve these problems, and an object of the present invention is to provide a cleaning technique capable of more reliably cleaning a processing region having a width determined from the peripheral edge of the substrate on the upper surface of the substrate.

  In order to solve the above-described problem, a substrate processing apparatus according to a first aspect includes a substrate rotation mechanism that holds and rotates a substrate, and of the upper surface of the substrate that is rotated by the substrate rotation mechanism. A discharge unit that discharges a processing liquid to a processing region having a width determined from a peripheral edge; and a cleaning unit that contacts the processing region of the substrate rotated by the substrate rotating mechanism and cleans the processing region. The discharge unit discharges the processing liquid toward a main discharge region that is defined in advance in a semicircular region downstream of the cleaning unit in the rotation direction of the substrate in the rotation trajectory of the processing region. .

  The substrate processing apparatus which concerns on a 2nd aspect is a substrate processing apparatus which concerns on a 1st aspect, Comprising: The discharge direction when the said discharge part discharges the said process liquid is rotation of the said substrate from the upper part of the said discharge part. When viewed in the axial direction, a component of the peripheral edge of the substrate along the tangent line in the portion adjacent to the main ejection region and downstream of the rotation direction of the substrate, and the center of the substrate along the direction orthogonal to the tangent line It is the diagonal direction which has a component which goes to a peripheral side from the side.

  The substrate processing apparatus which concerns on a 3rd aspect is a substrate processing apparatus which concerns on the 1st or 2nd aspect, Comprising: Above the part between the said washing | cleaning part and the rotating shaft of the said board | substrate among the upper surfaces of the said board | substrate. A gas flow is generated on the substrate from the injection target area toward the cleaning unit by injecting a gas from above the substrate toward an injection target area defined on the upper surface of the substrate. A gas injection unit;

  The substrate processing apparatus which concerns on a 4th aspect is a substrate processing apparatus which concerns on a 3rd aspect, Comprising: The said gas injection part is equipped with the injection port which injects the said gas to the said injection target area | region, The said injection port is It is a slit-like discharge port, and when it is seen through from the upper side of the gas jetting unit in the direction of the rotation axis of the substrate, the vicinity of the cleaning unit including the portion that contacts the cleaning unit among the peripheral edge of the substrate Curved along the circumference of the substrate.

  The substrate processing apparatus which concerns on a 5th aspect is a substrate processing apparatus which concerns on a 3rd aspect, Comprising: The said gas injection part is provided with the several injection port which injects the said gas to the said injection target area | region, These several The injection port curves along the vicinity of the cleaning unit including the portion of the peripheral edge of the substrate that contacts the cleaning unit when seen through the gas injection unit in the direction of the rotation axis of the substrate. They are separated from each other on the virtual line.

  The substrate processing apparatus which concerns on a 6th aspect is a substrate processing apparatus which concerns on a 3rd aspect, Comprising: The said gas injection part is equipped with the injection port which injects the said gas to the said injection target area | region, The said injection port is It is a slit-like discharge port, and is curved along a portion facing the peripheral edge of the substrate in the outer peripheral surface of the cleaning unit when seen through the gas injection unit from above the rotation axis direction of the substrate, It has a long shape in the circumferential direction of the cleaning part.

  The substrate processing apparatus which concerns on a 7th aspect is a substrate processing apparatus which concerns on a 3rd aspect, Comprising: The said gas injection part is provided with the several injection nozzle which injects the said gas to the said injection target area | region, These several The injection ports are spaced apart from each other on an imaginary line that curves along a portion of the outer peripheral surface of the cleaning unit facing the peripheral edge of the substrate when seen through the gas injection unit in the direction of the rotation axis of the substrate. Are lined up.

  According to the present invention, the discharge unit is configured to perform the processing toward a main discharge region that is defined in advance in a semi-annular region on the downstream side in the rotation direction of the substrate with respect to the cleaning unit in the rotation locus of the processing region on the upper surface of the substrate. Discharge the liquid. Therefore, for example, as compared with the case where the processing liquid is discharged to the upstream side in the rotation direction of the substrate with respect to the cleaning unit, the range in which the processing liquid is removed by the cleaning unit in the processing region and becomes dry is reduced. Therefore, the processing area on the upper surface of the substrate can be more reliably cleaned.

It is a side view which shows typically an example of schematic structure of the substrate processing apparatus concerning an embodiment. It is a top view of the substrate processing apparatus of FIG. It is a top view for demonstrating the area | region where a discharge part discharges a process liquid. It is a top view for demonstrating the discharge direction of the process liquid by a discharge part. It is a side view for demonstrating the discharge direction of the process liquid by a discharge part. It is a side view which shows typically an example of schematic structure of a gas injection part. It is a top view which shows an example of the injection outlet of a gas injection part. It is a top view which shows an example of the injection outlet of a gas injection part. It is a top view which shows an example of the injection outlet of a gas injection part. It is a top view which shows an example of the injection outlet of a gas injection part. It is a figure which shows an example of the relationship between the structure of an injection nozzle, and the increase number of a particle in a graph format. It is a side view which shows an example of schematic structure of a discharge part. It is a figure for demonstrating the area | region on the board | substrate where a discharge part discharges a process liquid. It is a figure which shows an example of the change of the position of a discharge part along a time series. It is a figure which shows an example of the relationship between the area | region on the board | substrate where discharge is started (stopped), and wetting width distribution in a graph format. It is a figure which shows an example of the relationship between the area | region on the board | substrate where discharge is started (stopped), and the distribution of the increase number of a particle in a graph format. It is a time chart which shows an example of cleaning operation of a substrate processing device. It is a time chart which shows an example of cleaning operation of a substrate processing device. It is a flowchart which shows an example of the process liquid discharge operation | movement of a substrate processing apparatus. It is a flowchart which shows an example of the washing | cleaning operation | movement of a substrate processing apparatus.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the drawings, parts having the same configuration and function are denoted by the same reference numerals, and redundant description is omitted in the following description. Each drawing is schematically shown, and the size and number of each part may be exaggerated or simplified for easy understanding. Further, some drawings are appropriately provided with XYZ orthogonal coordinate axes in order to explain directions. The Z axis in this coordinate axis indicates the vertical direction (+ Z side is the upper side), and the XY plane is a horizontal plane.

<1. Overall configuration of substrate processing apparatus>
FIG. 1 is a diagram schematically illustrating an example of a schematic configuration of a substrate processing apparatus 100 according to an embodiment. FIG. 2 is a top view of the substrate processing apparatus 100. The substrate processing apparatus 100 is a process having a width determined from a peripheral edge (also referred to as “edge” or “circumferential edge”) E1 of an upper surface (also referred to as “surface”) S1 of a substrate W such as a semiconductor wafer. A treatment liquid 51 such as pure water is supplied to the region (also referred to as “surface peripheral portion”) S3, and the treatment liquid 51 is used to perform the processing defined in the treatment region S3.

  As the processing liquid 51, for example, pure water is used. The treatment liquid 51 is not limited to pure water but may be functional water such as carbonated water, ionic water, ozone water, reduced water (hydrogen water) or magnetic water, or ammonia water or ammonia water and hydrogen peroxide water. It may be a chemical solution such as a mixed solution. The processing region S3 is an annular region having a width of 1.5 to 3.0 mm, for example, from the peripheral edge E1 of the substrate W in the upper surface S1 of the substrate W. The lower surface S2 opposite to the upper surface S1 is also referred to as a “back surface”. The surface shape of the substrate W is substantially circular, and its diameter is, for example, 300 mm. Of the upper surface S1 of the substrate W, the non-processing region S4 other than the processing region S3 means a device forming surface on which a device pattern is formed.

  The substrate processing apparatus 100 is provided on the lower surface of the spin chuck 5 (the “substrate rotation mechanism”) 5 that sucks and holds the substrate W in a substantially horizontal state and rotates it in the direction of the arrow R 1, and supports the spin chuck 5. A rotation support shaft 6 that can rotate while rotating, and a motor 7 that is connected to the rotation support shaft 6 and that rotates the rotation support shaft 6 to rotate the spin chuck 5 and the substrate W about the rotation axis a1. Is provided.

  The substrate processing apparatus 100 also includes a discharge unit 20 that can discharge the processing liquid 51, a moving unit 155 that moves the discharge unit 20, and a processing liquid supply source 131 that supplies the processing liquid 51 to the discharge unit 20. Yes. The discharge unit 20 discharges the processing liquid 51 to the processing region S3 of the substrate W rotated by the spin chuck 5. The moving unit 155 is provided with a motor on the side of the substrate W held by the spin chuck 5. A cylindrical pipe arm 180 having rigidity capable of supplying the treatment liquid 51 to the discharge unit 20 is connected to the upper end of the discharge unit 20, and the other end side of the pipe arm 180 passes through the moving unit 155 and its lower surface. Has reached.

  The moving unit 155 retreats the discharge unit 20 to a retreat position outside the carry-in path when the substrate W is delivered to the spin chuck 5 by turning the piping arm 180 in a substantially horizontal plane around the moving unit 155 by a motor. Let When the discharge unit 20 discharges the processing liquid to the processing region S3, the moving unit 155 rotates the piping arm 180 so that the discharging unit 20 discharges the processing liquid 51 to a predetermined region on the processing region S3. The ejection unit 20 is positioned at a position above the possible substrate W. Further, the moving unit 155 rotates the piping arm 180 so that the discharge unit 20 that discharges the processing liquid 51 moves on the substrate W so that the region where the processing liquid 51 is discharged moves on the processing region S3. Move up. Positioning and movement when the discharge unit 20 is discharging the processing liquid 51 are accurately performed by servo control. The servo control is controlled by the control unit 161. Accordingly, the position of the discharge unit 20 can be adjusted by a command from the control unit 161.

  One end of a pipe 381 disposed from the processing liquid supply source 131 is connected to the other end of the pipe arm 180 that penetrates the moving unit 155. The other end of the pipe 381 is connected to the processing liquid supply source 131, and an open / close valve 171 is provided in the middle. The processing liquid supply source 131 supplies the stored processing liquid 51 to the discharge unit 20 via a pipe 381 and a pipe arm 180 by a pump or the like. The opening / closing operation of the opening / closing valve 171 is controlled by the control unit 161.

  In addition, the substrate processing apparatus 100 includes a cleaning unit 10 that cleans the processing region S3 of the substrate W, a gas injection unit 30 that injects the gas 52 onto the upper surface S1 of the substrate W, and the stored gas 52 by using a pump or the like. A gas supply source 132 for supplying to the injection unit 30 and a pipe 382 for connecting the gas injection unit 30 and the gas supply source 132 in communication are provided. An opening / closing valve 172 that is controlled to be opened and closed by the controller 161 is provided in the middle of the pipe 382. The processing liquid supply source 131 and the gas supply source 132 may be provided outside the substrate processing apparatus 100.

  The cleaning unit 10 abuts on the processing region S3 of the substrate W rotated by the spin chuck 5 and scrapes off adhering substances (“contaminants”) such as particles and processing liquid adhering to the processing region S3 of the substrate W. By removing, the processing region S3 is cleaned. The cleaning unit 10 is configured to be rotatable (self-rotating) and has flexibility. The cleaning unit 10 is formed of, for example, a cylindrical brush or a porous member such as a sponge. The cleaning unit 10 contacts the processing region S3 of the substrate W so that the axial direction thereof is parallel to the rotation axis a1 of the substrate W. The cleaning unit 10 is rotated (rotated) around the axis of the cleaning unit 10 by being rotated by a rotation mechanism (not shown). In addition, the cleaning unit 10 is positioned at each of a contact position where the cleaning unit 10 is in contact with the processing region S3 of the substrate W and a separation position separated from the processing region S3. The cleaning unit 10 is in contact with the substrate W in a state where the cleaning unit 10 bites into the peripheral edge E1 of the substrate W, but is simplified in FIGS. 1 to 3 for easy understanding. In addition, the cleaning unit 10 can clean the processing region S3 while the discharge unit 20 is discharging the processing liquid 51 to the processing region S3, or can clean the processing region S3 while the processing liquid 51 is not discharged. You can also

  FIG. 6 is a side view schematically showing an example of a schematic configuration of the gas injection unit 30. As shown in FIGS. 1, 2, and 6, the gas injection unit 30 is provided above a portion of the upper surface S <b> 1 of the substrate W between the cleaning unit 10 and the rotation axis a <b> 1 of the substrate W. The gas injection unit 30 includes a rectangular parallelepiped main body, an injection port 31 provided on a side surface 36 of the main body that faces the cleaning unit 10, and a flow path 32 that communicates the injection port 31 and the pipe 382. . The height h2 of the lower end of the gas injection unit 30 with respect to the upper surface S1 of the substrate W is set to 25 mm, for example. The shape of the gas injection unit 30 is not limited to a rectangular parallelepiped, and various shapes are employed.

  The gas injection unit 30 injects the gas 52 from above the substrate W toward the injection target region 201 defined in advance on the upper surface S1 of the substrate W along the axial direction of the flow path 32 in the injection port 31 portion. A flow of gas 52 (that is, a gas flow) from the ejection target region 201 toward the cleaning unit 10 is generated on the substrate W. An angle θ3 formed by the gas 52 injection direction with the upper surface S1 of the substrate W is set to 45 °, for example.

  The substrate processing apparatus 100 includes contaminants scraped by the cleaning unit 10 due to the flow of the gas 52 from the ejection target region 201 toward the cleaning unit 10, mist of the processing liquid 51 generated by rotation of the cleaning unit 10, and the like. Can be prevented from being scattered in the non-process area S4 and adhering to the non-process area S4. The gas injection unit 30 injects, for example, nitrogen gas as the gas 52. In addition to the nitrogen gas, for example, a dry gas such as dry air or an inert gas other than the nitrogen gas may be injected.

  Further, as shown in FIG. 1, the substrate processing apparatus 100 includes a control unit 161 that is electrically connected to each component included in the substrate processing apparatus 100 and controls these elements. Specifically, the control unit 161 includes, for example, a CPU that performs various arithmetic processes, a ROM that stores programs, a RAM that serves as a work area for arithmetic processes, a hard disk that stores programs and various data files, a LAN, and the like. A data communication unit or the like having a data communication function via a computer is connected to each other by a bus or the like. The control unit 161 is connected to an input unit configured with a display, a keyboard, a mouse, and the like that perform various displays. In the substrate processing apparatus 100, a predetermined process is performed on the substrate W under the control of the control unit 161.

<2. Area where discharge unit discharges processing liquid>
FIG. 3 is a top view for explaining a region in which the discharge unit 20 discharges the processing liquid 51 to the processing region S3. As shown in FIG. 3, the ejection unit 20 is defined in advance in a semicircular region M1 (described later) on the downstream side in the rotation direction of the substrate W with respect to the cleaning unit 10 in the rotation locus of the processing region S3. The processing liquid 51 is discharged toward the second region (“main discharge region”) 72. Therefore, for example, as compared with the case where the processing liquid 51 is discharged to the upstream side in the rotation direction of the substrate W with respect to the cleaning unit 10, the processing liquid 51 is removed by the cleaning unit 10 in the processing region S3 to be in a dry state. The range becomes smaller. Therefore, the processing region S3 on the upper surface S1 can be more reliably cleaned. The semi-annular region M1 is a substrate with respect to the cleaning unit of two semi-annular regions separated by a plane J1 passing through the cleaning unit 10 and the rotation axis a1 of the substrate W in the rotation locus of the processing region S3. This is a region on the downstream side in the rotation direction.

  Further, the closer the second region 72 is to the cleaning unit 10 in the rotation trajectory of the processing region S3, the smaller the region of the processing region S3 where the processing liquid 51 is removed by the cleaning unit 10 and dried. Accordingly, it is more preferable that the second region 72 is closer to the cleaning unit 10 on the downstream side in the rotation direction of the substrate W with respect to the cleaning unit 10. However, if the processing liquid 51 is directly discharged to the cleaning unit 10, the processing liquid 51 may splash on the outer peripheral surface of the cleaning unit 10, and the non-processing area S4 may be contaminated. The area is different from the area where the cleaning unit 10 contacts the substrate W.

<3. Discharge direction of discharge part>
4 and 5 are a top view and a side view for explaining the discharge direction V1 when the discharge unit 20 discharges the processing liquid 51. FIG. The processing liquid 51 is discharged from the discharge port 21 of the discharge unit 20. A flow path 22 (see FIG. 12) that connects the discharge port 21 and the piping arm 180 connected to the top of the discharge section 20 is provided inside the discharge section 20. 22 is discharged along the discharge direction V1 along the direction of the axis (center axis) 23 of the discharge port 21 portion.

  As shown in FIG. 4, preferably, the discharge direction V1 is a tangent at a portion of the peripheral edge E1 of the substrate W adjacent to the second region 72 when viewed from the upper side of the discharge unit 20 in the direction of the rotation axis a1 of the substrate W. The diagonal direction which has the component V2 which goes to the rotation direction downstream of the board | substrate W along 91, and the component V3 which goes to the peripheral E1 side from the center side (rotation axis a1 side) of the board | substrate W along the direction orthogonal to the tangent 91. It is. Therefore, it is possible to suppress the treatment liquid 51 discharged to the treatment region S3 from splashing or adhering to the non-treatment region S4 by spreading to the non-treatment region S4. The angle θ1 formed by the discharge direction V1 with the tangent 91 is preferably set to 30 °, for example. The angle θ1 may be an angle other than 30 ° as long as it is larger than 0 ° and not more than 90 °. The angle θ1 may be a little larger than 90 °.

  As shown in FIG. 5, when the ejection unit 20 is viewed from the side of the substrate W, the angle θ2 that the ejection direction V1 forms with the upper surface S1 is preferably set to 30 °, for example. The angle θ2 may be set to an angle other than 30 ° as long as it is greater than 0 ° and 90 ° or less. Further, the angle θ2 may be slightly larger than 90 °.

  The height h1 of the discharge port 21 of the discharge unit 20 with respect to the upper surface S1 of the substrate W is set to 1 mm to 3 mm, for example, and preferably set to 2 mm, for example. The flow rate of the processing liquid 51 is, for example, 10 to 30 ml / min. Preferably, for example, 20 ml / min. Set to In addition, the rotation speed of the board | substrate W is set to 300-800 rpm, for example, Preferably, it sets to 500 rpm, for example.

<4. Configuration Example of Discharge Port of Gas Injection Unit>
7-10 is a top view which shows the injection ports 31a and 31c and the some injection ports 31b and 31d as an example of the injection port 31 of the gas injection part 30, respectively. 7 to 10 are perspective images when the injection ports 31a to 31d are seen through from the upper side of the gas injection unit 30 in the direction of the rotation axis a1 of the substrate W.

  As shown in FIG. 7, the injection port 31 a of the gas injection unit 30 has a slit shape, and when viewed from above in the direction of the rotation axis a <b> 1 (Z direction) of the substrate W, the cleaning unit among the peripheral edge E <b> 1 of the substrate W. 10 is curved along a proximity portion (for example, a portion surrounded by a broken line 111) with the cleaning unit 10 including a portion that contacts the substrate 10, and has a long shape in the circumferential direction of the substrate W. Thereby, compared with the case where the fluoroscopic images of the ejection port 31a are arranged along the tangent line 92, the distances L3 between the respective portions of the slit-shaped ejection port 31a and the adjacent portions can be made substantially equal to each other. Accordingly, the distribution of the flow rate of the gas 52 in the adjacent portion along the tangent line 92 can be made more uniform, that is, the gas 52 can be supplied uniformly to the adjacent portion. Can be prevented from being scattered and adhering to the non-process region S4 of the upper surface S1 of the substrate W.

  As shown in FIG. 8, when the plurality of injection ports 31 b of the gas injection unit 30 are seen through from the upper side of the gas injection unit 30 in the direction of the rotation axis a <b> 1 of the substrate W, the cleaning unit 10 out of the peripheral edge E <b> 1 of the substrate W. Are arranged apart from each other on an imaginary line K <b> 1 that curves along a proximity portion (for example, a portion surrounded by a broken line 111) that includes the portion that contacts the cleaning portion 10. Thereby, each perspective image of the plurality of injection ports 31b and each of the proximity portions are compared with the case where the perspective images of the peripheral edge E1 of the substrate W are aligned in the tangential 92 direction of the portion that contacts the cleaning unit 10. The distances L3 can be made substantially equal to each other. Accordingly, the distribution along the tangent 92 of the flow rate of the gas 52 in the adjacent portion can be made more uniform, that is, the gas 52 can be supplied uniformly to the adjacent portion, so that mist or the like can be supplied from the adjacent portion. It is possible to suppress scattering and adhering to the non-process area S4 on the upper surface S1.

  As shown in FIG. 9, the injection port 31 c of the gas injection unit 30 has a slit shape, and the substrate W out of the outer peripheral surface of the cleaning unit 10 when seen through the gas injection unit 30 in the direction of the rotation axis a <b> 1. Is curved along a portion facing the periphery E1 (for example, a portion surrounded by a broken line 112), and has a long shape in the circumferential direction of the cleaning unit 10. Thereby, compared with the case where the perspective image of the injection port 31c is long in the tangential 92 direction of the portion of the peripheral edge E1 of the substrate W that contacts the cleaning unit 10, the outer periphery of the cleaning unit 10 and each part of the slit-shaped injection port 31c. Each distance L5 with the said opposing part in a surface can be made substantially equal mutually. Accordingly, since the gas 52 can be uniformly supplied from the periphery of the cleaning unit 10 to the contact position between the cleaning unit 10 and the substrate W, mist or the like scatters from the cleaning unit 10 and the non-processed region on the upper surface S1. It can suppress adhering to S4.

  As shown in FIG. 10, when the plurality of injection ports 31 d of the gas injection unit 30 are seen through the gas injection unit 30 in the direction of the rotation axis a <b> 1, the peripheral edge E <b> 1 of the substrate W among the outer peripheral surface of the cleaning unit 10. Are spaced apart from each other on an imaginary line K2 that is curved along a portion facing (for example, a portion surrounded by a broken line 112). Thereby, compared with the case where each perspective image of the plurality of injection ports 31d is arranged in the direction of the tangent 92 of the portion of the peripheral edge E1 that is in contact with the cleaning unit 10, each distance L5 between the plurality of injection ports 31d and the facing portion is set. , Can be substantially equal to each other. Accordingly, since the gas 52 can be uniformly supplied from the periphery of the cleaning unit 10 to the contact position between the cleaning unit 10 and the substrate W, mist generated from the cleaning unit 10 is not treated by the non-process region S4 on the upper surface S1. Can be prevented from being scattered.

  The hole diameters (diameters) of the plurality of injection ports 31b and 31d are preferably set to 0.5 mm to 1.0 mm. The number of the injection ports 31b and 31d is set to 5-10. The shape of the plurality of injection ports 31b and 31d is not limited to a circle, and for example, a shape other than a circle such as a quadrangle may be employed. The width of the injection ports 31a and 31c is preferably set to 0.5 mm to 1.0 mm, and the lengths L2 and L4 of the injection ports 31a and 31c along the tangent line 92 are preferably set to about 40 mm. The

  FIG. 11 is a graph showing an example of the relationship between the configuration of the injection port of the gas injection unit 30 and the increased number of particles adhering to the non-process region S4 over the entire circumference of the substrate W in a bar graph format. Specifically, three types of injection ports are shown on the horizontal axis of the graph shown in FIG. On the vertical axis, for each of the injection ports shown on the horizontal axis, after the cleaning unit 10 performs the process of cleaning the processing region S3 while the gas injection unit 30 sprays the gas 52, the substrate W The increase number of the particles adhering to the non-process area | region S4 over the perimeter is shown. Particles having a diameter of 40 nm or more are counted.

  The leftmost one of the three types of injection ports shown on the horizontal axis is the injection port according to the comparative technique, and more specifically, extends straight in the vertical direction with respect to the upper surface S1 of the substrate W. It is the circular injection port in the lower end of a pipe-shaped nozzle. The middle and rightmost injection ports on the horizontal axis are the plurality of injection ports 31d and the injection ports 31a described above. The plurality of ejection ports 31d and the ejection ports 31a have an angle θ3 of 45 °, the ejection ports according to the comparative technique have an angle θ3 of 90 °, and the height h3 from the upper surface S1 of each ejection port is set to 25 mm. ing. The flow rate of the gas 52 injected from the injection port, the plurality of injection ports 31d, and the injection port 31a according to the comparative technology (for the plurality of injection ports 31d, the total flow rate of the gas 52 injected from each injection port 31d) is respectively , 100 NL / min., 170 NL / min., 190 NL / min.

  As shown in FIG. 11, the number of particles increased with respect to the injection port, the plurality of injection ports 31d, and the injection port 31a according to the comparative technique was 6136, 8-10, and 4-5, respectively. As described above, even if any of the injection port 31a and the plurality of injection ports 31d is adopted as the injection port 31 of the gas injection unit 30 according to the embodiment, the particles are remarkably compared with the discharge port according to the comparative technique. The increase is decreasing.

  Further, in comparison with the injection port 31a and the plurality of injection ports 31d, the increase in the number of particles in the injection port 31a is improved to about half of the plurality of injection ports 31d. Further, the measurement results for the injection ports 30c (not shown) are improved by being substantially the same as the plurality of injection ports 31d or slightly less than the plurality of injection ports 31d. This is because the injection port 31c is a slit-like injection port, so that the flow of the gas 52 is made more uniform than the discrete injection ports 31d. Further, the measurement results for the injection port 31b (not shown) are substantially the same as the number of the injection ports 31a, or the number of particles increased slightly more than that of the injection ports 31a. This is because the uniformity of the flow of the gas 52 is slightly worse in the plurality of injection ports 31b than in the injection ports 31a. Accordingly, as the injection ports 31 of the gas injection unit 30, preferably, a plurality of injection ports 31d are employed, more preferably, the injection ports 31c are employed, and even more preferably, the plurality of injection ports 31b are employed. Even more preferably, the injection port 31a is employed.

  An injection target region 201 of the gas injection unit 30 shown in FIG. 6 (in the case where the gas injection unit 30 includes a plurality of injection ports, a row of the injection target regions 201 corresponding to the injection ports) is a processing region S3 of the substrate W. Is defined on the upper surface S <b> 1 of the substrate W so as to face the portion with which the cleaning unit 10 contacts. The ejection target area 201 may include the inner peripheral edge E2 (FIG. 2) of the rotation locus of the processing area S3, or may be defined on the center side (rotation axis a1 side) of the substrate W from the inner peripheral edge E2. , The inner peripheral edge E2 may be defined closer to the peripheral edge (outer peripheral edge) E1. The injection target region 201 is preferably defined including the inner peripheral edge E2 of the rotation locus of the processing region S3, and more preferably, the rotation locus of the processing region S3 is closer to the center of the substrate W than the inner periphery E2. It is defined in the vicinity.

  When the gas flow of the gas 52 (in the case of multiple injection ports, the entire gas flow) is viewed from above in the direction of the rotation axis a1 of the substrate W, the entire cleaning unit 10 is included in the gas flow. Is preferred. If the entire cleaning unit 10 is included in the gas flow, not only mist from the contact portion but also mist generated from the cleaning unit 10 itself due to the rotation of the cleaning unit 10 can be further prevented from being scattered. When the gas flow (in the case of a plurality of injection ports, the entire gas flow) is a parallel flow symmetric with respect to a plane including the central axis (rotation axis) of the cleaning unit 10 and the rotation axis a1 of the substrate W. The condition that the entire cleaning unit 10 is included in the gas flow is the width in the tangential 92 direction of the injection port 31 (in the case of the injection port 31a and the plurality of injection ports 31b, the width L2; the injection port 31c, In the case of the plurality of injection ports 31d, this corresponds to a case where the width L4) is longer than the diameter L1 of the cleaning unit 10.

  It is more preferable that the gas flow of the gas 52 is a parallel flow because a decrease in the flow velocity of the gas flow can be suppressed as compared with a case where the gas flow spreads in a fan shape toward the cleaning unit 10 on the substrate W. In addition, even if the gas flow is not a parallel flow, it is possible to suppress scattering of the mist and the like to the non-processing region and to suppress the spread of the gas flow by bringing the gas injection unit 30 closer to the cleaning unit 10 side. It does not impair the usefulness. For example, the gas flow may be an air flow toward the rotation axis of the cleaning unit 10.

<5. Fluctuation of the position of the discharge part during discharge operation>
FIG. 12 is a side view illustrating an example of a schematic configuration of the discharge unit 20. As shown in FIG. 12, the discharge unit 20 includes a discharge port 21 that discharges the processing liquid 51, and a flow path 22 that communicates with the discharge port 21 and the piping arm 180 and supplies the processing liquid 51 to the discharge port 21. It has. The diameter φ of the discharge port 21 is set to 0.3 mm, for example. The cross section of the flow path 22 in the discharge port 21 portion is projected onto a region 79 in the rotation locus of the processing region S3 along the direction (axis “center axis”) 23 of the flow channel 22 in the discharge port 21 portion.

  Since the processing liquid 51 is discharged from the discharge port 21 along the direction of the axis 23, the processing liquid 51 discharged from the discharge port 21 when the cross-sectional shape of the flow path 22 in the discharge port 21 is substantially constant. Has a liquid column shape having substantially the same cross section as the flow path 22 and is discharged toward the region 79. In this case, the inner diameter φ of the discharge port 21 and the diameter of the cross section of the liquid column of the discharged processing liquid 51 are substantially the same length. In order to prevent the cross section of the liquid column of the processing liquid 51 from expanding as the processing liquid 51 discharged from the discharge opening 21 moves away from the discharge opening 21, the cross-sectional shape of the portion in the vicinity of the discharge opening 21 in the flow path 22 is constant. It is preferable that The cross-sectional shape of the flow path 22 in the discharge port 21 portion may be other than a circle such as a square, for example.

  FIG. 13 illustrates each region on the substrate W from which the discharge unit 20 discharges the processing liquid 51 (a first region 71 for starting discharge, a second region 72 for continuing discharge, and a third region 73 for stopping discharge). It is a figure for doing. FIG. 14 is a diagram showing an example of changes in the position of the discharge unit 20 and the region in which the processing liquid 51 is discharged onto the substrate W in the discharge operation of the discharge unit 20 in time series.

  In a state where the discharge unit 20 is positioned at the first position (“discharge start position”) 61 above the substrate W, the control unit 161 starts the discharge of the processing liquid 51 and discharges the processing liquid 51. The discharge unit moves to a second position (“main discharge position”) 62 closer to the rotation axis a1 of the substrate W than the first position 61 while discharging, and continues to discharge the processing liquid 51 at the second position 62. 20 and the moving unit 155 are controlled. Further, the controller 161 discharges the processing liquid 51 at the second position 62 while the discharging section 20 discharges the processing liquid 51, while the second position 62 is farther from the rotation axis a <b> 1 of the substrate W (third position ( The ejection unit 20 and the moving unit 155 are controlled so that the ejection of the processing liquid 51 is stopped at the third position 63. The control unit 161 controls the discharge operation of the discharge unit 20 by controlling the opening and closing of the open / close valve 171, and controls the moving unit 155 by controlling the rotation operation of the motor built in the moving unit 155 to control the discharge unit 20. Move.

  As shown in FIG. 13 and FIG. 14, the first region 71 has a cross section of the flow path 22 in the discharge port 21 portion of the discharge portion 20 positioned at the first position 61. This is a region projected on the rotation locus of the processing region S3 along the direction of the axis 23. The processing liquid 51 discharged by the discharge unit 20 positioned at the first position 61 is discharged toward the first region 71.

  Similarly, in the second region 72, the cross section of the flow path 22 in the discharge port 21 portion of the discharge unit 20 positioned at the second position 62 is a processing region along the direction of the axis 23 of the flow channel 22 in the discharge port 21 portion. This is an area projected on the rotation locus of S3. The processing liquid 51 discharged by the discharge unit 20 positioned at the second position 62 is discharged toward the second region 72.

  Similarly, in the third region 73, the cross section of the flow channel 22 in the discharge port 21 portion of the discharge unit 20 positioned at the third position 63 is a processing region along the direction of the axis 23 of the flow channel 22 in the discharge port 21 portion. This is an area projected on the rotation locus of S3. The processing liquid 51 discharged by the discharge unit 20 positioned at the third position 63 is discharged to the third region 73. Further, the first region 71 and the third region 73 are regions closer to the peripheral edge E <b> 1 of the substrate W than the second region 72.

  In FIG. 13, the cross-sectional shape of the flow path 22 in the discharge port 21 portion is circular, and the angle θ2 (FIGS. 5 and 12) is 90 degrees. When the cross-sectional shape is circular and the angle θ2 is not 90 °, the shapes of the first region 71 (third region 73) and the second region 72 are elliptical, and the long axis is set according to the angle θ1. The direction of the short axis varies. If the cross-sectional shape is other than a circle, the first region 71, the second region 72, and the third region 73 have various shapes according to the cross-sectional shape and the angles θ1 and θ2.

  As described above, the discharge unit 20 is positioned at the first position 61 (third position 63) and the second position 62 by the turning of the piping arm 180 by the moving unit 155 controlled by the control unit 161, and The first position 61 (third position 63) is moved to the second position 62, and the second position 62 is moved to the third position 63 (first position 61). For example, if the width of the processing region S3 is 2 mm, the moving distance from the first position 61 (third position 63) to the second position 62 is remarkably larger than the length of the piping arm 180 that moves the discharge unit 20. Shorter. Accordingly, as shown in FIG. 1, when the moving unit 155 moves the discharge unit 20 from the first position 61 (third position 63) to the second position 62 by turning the piping arm 180, The discharge unit 20 is moved along a substantially straight line, and the angles θ1 and θ2 are kept constant.

  The size of the substrate W, the diameter φ of the discharge port 21, the first position 61, the second position 62, the third position 63, the width L13 of the processing region S3, and the like are set in advance and stored in the memory of the control unit 161 or the like. Has been. The first position 61 and the third position 63 may be the same or different. That is, the first region 71 and the third region 73 may be the same or different.

  In the second position 62, the processing liquid 51 discharged to the processing area S3 from the discharging section 20 which continues the discharging operation of the processing liquid 51 in a stable liquid column shape at the second position 62 enters the non-processing area S4. In addition, it is determined in advance by experiments or the like so that the target processing can be performed on the processing region S3 using the processing liquid 51. In other words, in the second region 72, when the discharge unit 20 continues the discharge operation of the processing liquid 51 toward the second region 72 in a stable liquid column shape, the discharged processing liquid 51 is not This is a region that does not adhere to the processing region S4, and is determined in advance by experiments or the like. Specifically, the distance from the inner peripheral edge E2 of the processing region S3 to the center 82 of the second region 72 is set to be equal to or longer than the length of the diameter φ of the discharge port 21, for example, as shown in FIG. Thereby, when the discharge unit 20 discharges the processing liquid 51 at the second position 62, the processing liquid 51 more reliably enters the rotation axis a1 side of the substrate W than the processing region S3, that is, the non-processing region S4. Can be suppressed.

  Further, when the discharge of the processing liquid 51 is stopped, the amount of the processing liquid 51 discharged from the discharge section 20 by sucking back the processing liquid 51 inside the flow path 22 of the discharge section 20 to the processing liquid supply source 131 side or the like. And the splash of the processing liquid 51 can be suppressed. Therefore, even if the discharge unit 20 continues to discharge the processing liquid 51 at the second position 62 and the discharge unit 20 stops the discharge of the processing liquid 51 without moving to the peripheral edge E1 side of the substrate W. It does not detract from the usefulness of the invention.

  By the control of the discharge unit 20 and the moving unit 155 by the control unit 161 described above, the discharge unit 20 is positioned at the first position 61 and is directed toward the first region 71 as shown in FIG. 51 discharge is started. Next, the discharge unit 20 is moved to the second position 62 along the arrow Y <b> 1 while discharging the processing liquid 51, and continues to discharge the processing liquid 51 toward the second region 72 at the second position 62. Next, the discharge unit 20 is moved to the third position 63 along the arrow Y2 while discharging the processing liquid 51. When the discharge unit 20 is moved to the third position 63, the discharge unit 20 discharges the processing liquid 51 toward the third region 73. When the movement to the third position 63 is completed, the discharge unit 20 stops the discharge of the processing liquid 51. The substrate processing apparatus 100 further includes another discharge unit capable of discharging the processing liquid onto the lower surface S2, the discharge unit 20 discharges the processing liquid into the processing region S3, and the other discharge unit processes the lower surface S2. The liquid may be discharged. In this case, the discharge of the treatment liquid to the treatment region S3 and the discharge of the treatment liquid to the lower surface S2 may be performed in parallel or sequentially.

  As described above, the processing liquid 51 is discharged from the discharge unit 20 at the first position 61 toward the first region 71 in the rotation locus of the processing region S3, and from the discharge unit 20 at the second position 62, The ink is discharged toward the second region 72 of the rotation locus. At the start of discharge, the liquid column shape of the discharged processing liquid 51 is unstable as compared with the case where the discharge is continued. For this reason, the processing liquid 51 discharged toward the first region 71 may also be discharged around the first region 71. However, the first region 71 is closer to the peripheral edge E1 side of the substrate W than the second region 72 is. It is an area. Further, during the movement to the second position 62 and during the discharge operation at the second position 62, the discharge unit 20 continues the discharge operation, so that the processing liquid 51 is discharged in a liquid column shape that is more stable than at the start of discharge. Is done. Therefore, it is possible to prevent the processing liquid 51 from adhering to the non-processing area S4 due to the splashing of the substrate W in the processing area S3 or spreading in the processing area S3. Further, since the processing liquid 51 is discharged onto the substrate W by the discharge unit 20, a larger amount of processing liquid can be supplied as compared with the case where the processing liquid leached from the sponge or the like is supplied to the substrate W. As a result, the processing area S3 can be processed more reliably.

  In addition, the treatment liquid 51 continues to be discharged in both the state where the discharge unit 20 continues the discharge operation at the second position 62 and the state where the discharge unit 20 moves from the second position 62 to the third position 63. The liquid column shape of the processing liquid 51 is suppressed from becoming unstable. Further, when the discharge of the processing liquid 51 is stopped from the discharge portion 20 at the third position 63 toward the third region 73, the liquid column shape becomes unstable, and the processing liquid 51 Although the liquid may be discharged around the third region 73, the third region 73 is a region closer to the peripheral edge E <b> 1 of the substrate W than the second region 72. Accordingly, it is possible to suppress the liquid splashing in the processing region S3 of the substrate W or adhesion of the processing liquid 51 to the non-processing region S4 due to spreading.

  FIG. 15 is a graph showing the distribution of the wetting width of the substrate W by the processing liquid 51 over the entire circumference of the substrate W after the discharging unit 20 performs the discharging process of the processing liquid 51 in the order shown in FIG. It is. The distribution of the wetting width is measured by variously changing the position of the first region 71 (that is, the distance L11 from the peripheral edge E1 of the substrate W to the center 81 of the first region 71). In the example of FIG. 15, the first area 71 at the start of ejection and the third area 73 at the end of ejection are the same area. That is, the first position 61 and the third position 63 of the ejection unit 20 are the same position, and the distance L11 is also the distance from the peripheral edge E1 of the substrate W to the center 83 of the third region 73.

  The lower end of each vertical bar shown for each distance L11 on the horizontal axis indicates the minimum value of the wetting width measured over the entire circumference of the substrate W, and the upper end indicates the maximum value of the wetting width. In addition, diamonds indicate the average value of the wetting width over the entire circumference of the substrate W. The width L13 (see FIG. 13) of the processing area S3 is set to 2 mm, and the position of the center 82 of the second area 72 is 1.7 mm from the peripheral edge E1 of the substrate W. “Outside of wafer” described at the left end of the horizontal axis in FIG. 15 corresponds to a state in which the first region 71 (third region 73) includes the peripheral edge E1. “1.7 mm” written at the right end of the horizontal axis indicates that the first region 71 (third region 73) is coincident with the second region 72, that is, the treatment liquid 51 is discharged at the second position 62. This corresponds to a state in which the discharge is continued at the second position 62 as it is started and then discharged at the second position 62.

  16 shows the position of the substrate W with respect to each position (each distance L11 from the peripheral edge E1 of the substrate W to the center of each region) of the first region 71 (third region 73) shown on the horizontal axis of FIG. It is a figure which shows an example of distribution of the increase number of the particle adhering to non-processing area | region S4 over a perimeter in a graph format. Particles having a diameter of 40 nm or more are counted. In addition, the diamond marks indicate the average value of the increase in the number of particles over the entire circumference of the substrate W.

  As shown in FIG. 15, when the distance L <b> 11 indicated on the horizontal axis is “1.7 mm” (when the discharge and start of the treatment liquid 51 are performed at the second position 62), the substrate In a part of the entire circumference of W, the wetting width exceeds the width L13 of the processing region S3 and the wetting region enters the non-processing region S4. In both the amount of penetration and the uniformity of the wetting width, This is the worst state of the wet region for each distance L11. In addition, as shown in FIG. 16, when the distance L11 indicated on the horizontal axis is “1.7 mm” (when the discharge of the processing liquid 51 is started and stopped at the second position 62). Particles are also increasing most in the measurement results for each distance L11.

  Further, as shown in FIG. 15, when the distance L11 indicated on the horizontal axis is “0 mm” (when a part of the first region 71 and the third region 73 is outside the wafer), the substrate W In part of the entire circumference, the wet area reaches the inner edge E2 of the processing area S3. Further, the distribution width of the wetting width is larger than when the distance L11 is 0.15 mm to 1.55 mm. That is, the uniformity of the wetting width is deteriorated. Further, the particles also increase next when the distance L11 is 1.7 mm (see FIG. 16).

  As shown in FIG. 15, when the distance L <b> 11 is 0.15 mm to 1.55 mm, the uniformity of the wetting width is improved, and the wetting width falls within the processing region S <b> 3 over the entire circumference of the substrate W. Yes. As shown in FIG. 16, when the distance L11 is 0.15 mm to 1.55 mm, the number of increased particles is also kept at a relatively small value.

  Here, in the case where the distance L11 is 0.15 mm in FIGS. 15 and 16, the distance L11 is 0.5φ, that is, the first area 71 (third area 73) is surrounded by the broken line in FIG. This is the case. From the measurement results of FIGS. 15 and 16, if the distance L <b> 11 is more than half the diameter φ of the discharge port 21, the unstable liquid column-shaped treatment liquid 51 started to be discharged toward the first region 71. Is considered to be suppressed from being discharged also to the peripheral edge E1 of the substrate W. Therefore, adhesion of the treatment liquid 51 to the non-treatment region S4 due to the liquid splash at the peripheral edge E1 can be suppressed.

  Further, when the distance L11 from the center 83 of the third region 73 to the peripheral edge E1 of the substrate W is a length of half or more of the diameter φ of the discharge port 21, the discharge is continued toward the third region 73. Even if the liquid column shape becomes unstable in the process of stopping the discharge of the processing liquid 51, it is considered that the discharge of the processing liquid 51 to the peripheral edge E1 is suppressed. Accordingly, it is possible to suppress adhesion of the treatment liquid 51 to the non-treatment region S4 due to the liquid splash at the peripheral edge E1.

  15 and 16, when the distance L11 is 1.55 mm, the distance L12 from the center 81 of the first region 71 to the center 82 of the second region 72 is the diameter φ of the discharge port 21. That is, the first region 71 is a region surrounded by a one-dot chain line in FIG. Since the shape of the liquid column of the processing liquid 51 at the start of discharge is unstable, the discharge section 20 is at a distance L12, that is, from the discharge start position (first position 61) of the processing liquid 51 to the discharge continuation position (second position 62). When the amount of movement when the is moved is short, the discharged processing liquid 51 may enter the non-processing region S4. For this reason, a certain length is required as the distance L12. Specifically, from the measurement results of FIGS. 15 and 16, if the distance L12 is, for example, more than half the diameter φ of the discharge port 21, the unstable discharge started toward the first region 71. It is considered that the liquid column-shaped processing liquid 51 is suppressed from entering the non-processing area S4. That is, for example, if the distance L12 is set to a length that is half or more of the diameter φ of the discharge port 21, the liquid in the processing region S3 of the substrate W by the processing liquid 51 started to discharge toward the first region 71. The adhesion of the processing liquid 51 to the non-processing area S4 due to the splashing or spreading can be suppressed to the same level or more as compared with the state where the processing liquid 51 continues to be discharged in a stable liquid column shape toward the second area 72. . Here, even if the discharge of the treatment liquid 51 is continued in the second region 72 in a stable liquid column shape toward the second region 72, the adhesion of the treatment liquid 51 to the non-treatment region S4 is suppressed. Is set.

<6. Operation of substrate processing apparatus>
17 and 18 are time charts showing an example of the cleaning operation of the substrate processing apparatus 100, respectively. FIG. 17 is a time chart when the processing liquid is discharged during brush cleaning (during cleaning by the cleaning unit 10), and FIG. 18 is a time chart when the processing liquid is not discharged during brush cleaning. It is. The discharge of the processing liquid during brush cleaning is performed mainly for the purpose of wetting the brush with the processing liquid. As shown in FIG. 18, the treatment liquid does not have to be discharged during brush cleaning. FIG. 19 is a flowchart illustrating an example of the processing liquid discharge operation of the substrate processing apparatus 100. FIG. 20 is a flowchart illustrating an example of the cleaning operation of the substrate processing apparatus 100.

  Prior to cleaning by the cleaning unit 10 (brush), the substrate processing apparatus 100 performs a pre-rinsing process in which the processing liquid (cleaning liquid) 51 is discharged from the discharge unit 20 to the processing region S3 of the substrate W (step S10 in FIG. 20). .

  Here, prior to the start of step S <b> 10, the position of the cleaning unit 10 is positioned at a separation position that does not hinder delivery of the substrate W to the spin chuck 5. Further, the discharge unit 20 is also positioned at a retracted position that does not hinder the delivery of the substrate W to the spin chuck 5, and the discharge unit 20 does not discharge the processing liquid (see FIGS. 17 and 18).

  When the pre-rinsing process in step S10 is started in this state, first, the discharge unit 20 is positioned at the first position 61 (discharge start position) by the moving unit 155. The discharge unit 20 starts to discharge the processing liquid 51 at the first position 61 (step S110 in FIGS. 17, 18, and 19), and the discharge unit 20 performs the discharge to the second position 62 (main discharge position) by the moving unit 155. It is moved (step S120 in FIGS. 17, 18, and 19). Next, the discharge unit 20 continues to discharge the processing liquid 51 at the second position (step S130 in FIG. 19), and performs a pre-rinse process. Thereafter, the pre-rinsing process is terminated by being moved by the moving unit 155 to the third position 63 (discharge stop position) while discharging the processing liquid 51 (step S140 in FIGS. 17, 18, and 19). Note that the first position 61 and the third position 63 are equal positions. The first position 61 and the third position 63 may be different from each other. After the ejection unit 20 is arranged at the third position 63 (FIGS. 17 and 18), the ejection of the processing liquid 51 is stopped at the third position 63 (step S150 in FIGS. 17, 18 and 19).

  When the pre-rinsing process is completed, a brush cleaning process is performed by the cleaning unit 10 (brush) (step S20 in FIG. 20). In step S <b> 20, the cleaning unit 10 is moved from the separation position to a contact position that contacts the processing region S <b> 3 of the substrate W. When discharging the processing liquid 51 during brush cleaning, the discharge unit 20 discharges the processing liquid 51 at the first position 61 (third position 63) (FIG. 17). During the brush cleaning, the discharge unit 20 starts discharging the processing liquid 51 at the first position 61, then moves to the second position 62 while discharging the processing liquid 51, and the processing liquid 51 is discharged at the second position 62. Discharging may be continued. When performing the brush cleaning process that does not involve the discharge of the treatment liquid 51, the discharge unit 20 does not discharge the treatment liquid 51 (FIG. 18). When the brush cleaning process is completed, the cleaning unit 10 is moved from the contact position to the separation position, and when the discharge unit 20 is discharging the processing liquid 51, the discharge unit 20 stops discharging (FIG. 17). . Thereby, the brush cleaning process ends. When the discharge unit 20 moves to the second position 62 and continues to discharge the processing liquid 51 while discharging the processing liquid 51 during brush cleaning, the discharging unit 20 performs processing at the end of the brush cleaning processing. After moving from the second position 62 to the third position 63 while discharging the liquid 51, the discharge of the processing liquid 51 is terminated.

  When the brush cleaning process is completed, the substrate processing apparatus 100 performs a post-rinse process that is a rinse process after the brush cleaning (step S30 in FIG. 20). In the post-rinse process, the processes in steps S110 to S150 in FIG. 19 are performed as in the pre-rinse process. As a result, the post-rinsing process ends.

  When the post-rinsing process is completed, the ejection unit 20 is retracted to the retracted position by the moving unit 155 (FIGS. 17 and 18). Thereby, the cleaning operation of the substrate processing apparatus 100 is completed. In each of the above processes, the operations of the cleaning unit 10, the discharge unit 20, and the moving unit 155 are controlled by the control unit 161.

  According to the substrate processing apparatus according to the present embodiment as described above, the discharge unit 20 is previously placed in the semicircular region M1 on the downstream side in the rotation direction of the substrate W with respect to the cleaning unit 10 in the rotation locus of the processing region S3. The processing liquid 51 is discharged toward the prescribed second region (main discharge region) 72. Therefore, for example, as compared with the case where the processing liquid 51 is discharged to the upstream side in the rotation direction of the substrate W with respect to the cleaning unit 10, the processing liquid 51 is removed by the cleaning unit 10 in the processing region S3 to be in a dry state. The range becomes smaller. Therefore, the processing region S3 on the upper surface S1 can be more reliably cleaned.

  Further, according to the substrate processing apparatus according to the present embodiment as described above, the discharge direction V1 of the processing liquid 51 is along the tangent line 91 in the portion adjacent to the second region 72 in the peripheral edge E1 of the substrate W. Of the substrate W along the direction perpendicular to the tangent 91 and a component V3 from the center side (rotation axis a1 side) of the substrate W toward the peripheral edge E1. Therefore, it is possible to suppress the treatment liquid 51 discharged to the treatment region S3 from adhering to the non-treatment region S4 due to liquid splashing or spreading to the non-treatment region S4.

  Moreover, according to the substrate processing apparatus which concerns on this embodiment as mentioned above, a gas injection part produces | generates the gas flow which goes to the washing | cleaning part side from an injection target area | region on a board | substrate. Therefore, it is possible to prevent the contaminants scraped off by the cleaning unit and the mist of the processing liquid generated by the rotation of the cleaning unit from scattering to the non-processing region and adhering to the non-processing region.

  Moreover, according to the substrate processing apparatus which concerns on this embodiment as mentioned above, the injection port 31a of the gas injection part 30 is slit shape, and when it sees through to the rotating shaft a1 direction of the board | substrate W from upper direction, The peripheral edge E1 is curved along the vicinity of the cleaning unit 10 including the part that contacts the cleaning unit 10, and has a long shape in the circumferential direction of the substrate W. As a result, the distance L3 between each portion of the slit-shaped injection port 31a and the adjacent portion is compared with the case where the perspective image of the injection port 31a is longer in the tangential 92 direction of the portion of the peripheral edge E1 that contacts the cleaning unit 10. , Can be substantially equal to each other. Therefore, since the gas 52 can be supplied uniformly to the adjacent portion, it is possible to suppress mist and the like from being scattered from the adjacent portion and adhering to the non-processing region S4 of the upper surface S1 of the substrate W.

  Further, according to the substrate processing apparatus according to the present embodiment as described above, when the plurality of injection ports 31b of the gas injection unit 30 are seen through from the upper side of the gas injection unit 30 in the direction of the rotation axis a1 of the substrate W, Of the peripheral edge E1 of the substrate W, they are arranged apart from each other on an imaginary line K1 that curves along the vicinity of the cleaning unit 10 including the part that contacts the cleaning unit 10. Thereby, each perspective image of the plurality of injection ports 31b and each of the proximity portions are compared with the case where the perspective images of the peripheral edge E1 of the substrate W are aligned in the tangential 92 direction of the portion that contacts the cleaning unit 10. The distances L3 can be made substantially equal to each other. Therefore, since the gas 52 can be supplied uniformly to the adjacent portion, it is possible to suppress mist and the like from being scattered from the adjacent portion and adhering to the non-processing region S4 of the upper surface S1.

  Moreover, according to the substrate processing apparatus which concerns on this embodiment as mentioned above, when the injection port 31c of the gas injection part 30 is slit shape, it sees through from the upper direction of the gas injection part 30 to the rotating shaft a1 direction, Of the outer peripheral surface of the cleaning unit 10, it is curved along the portion facing the peripheral edge E <b> 1 of the substrate W, and has a long shape in the circumferential direction of the cleaning unit 10. Thereby, compared with the case where the perspective image of the injection port 31c is long in the tangential 92 direction of the portion of the peripheral edge E1 of the substrate W that contacts the cleaning unit 10, the outer peripheral surface of the cleaning unit 10 and each part of the slit-shaped injection port 31c. The distances L5 to the facing portions in can be made substantially equal to each other. Accordingly, since the gas 52 can be uniformly supplied from the periphery of the cleaning unit 10 to the contact position between the cleaning unit 10 and the substrate W, mist or the like scatters from the cleaning unit 10 and the non-processed region on the upper surface S1. It can suppress adhering to S4.

  Further, according to the substrate processing apparatus according to the present embodiment as described above, when the plurality of injection ports 31 d of the gas injection unit 30 are seen through from the upper side of the gas injection unit 30 in the direction of the rotation axis a <b> 1, the cleaning unit 10. Are arranged apart from each other on an imaginary line K2 that curves along a portion facing the periphery E1 of the substrate W. Thereby, compared with the case where each perspective image of the plurality of injection ports 31d is arranged in the direction of the tangent 92 of the portion of the peripheral edge E1 that is in contact with the cleaning unit 10, each distance L5 between the plurality of injection ports 31d and the facing portion is set. , Can be substantially equal to each other. Accordingly, since the gas 52 can be uniformly supplied from the periphery of the cleaning unit 10 to the contact position between the cleaning unit 10 and the substrate W, mist generated from the cleaning unit 10 is not treated by the non-process region S4 on the upper surface S1. Can be prevented from being scattered.

  Although the invention has been shown and described in detail, the above description is illustrative in all aspects and not restrictive. Therefore, embodiments of the present invention can be modified or omitted as appropriate within the scope of the invention.

DESCRIPTION OF SYMBOLS 100 Substrate processing apparatus 10 Cleaning part 20 Ejection part 21 Ejection port 22 Flow path 23 Shaft 30 Gas injection part 31, 31a, 31b, 32c, 31d Ejection port 32 Flow path 36 Side surface 5 Spin chuck (substrate rotation mechanism)
DESCRIPTION OF SYMBOLS 10 Cleaning part 51 Processing liquid 52 Gas 61 1st position 62 2nd position 63 3rd position 71 1st area | region 72 2nd area | region 73 3rd area | region 155 Moving part 180 Piping arm 201 Injection target area | region a1 Rotating shaft W board | substrate S1 upper surface S2 Lower surface S3 Processing area S4 Non-processing area

Claims (7)

A substrate rotation mechanism for holding and rotating the substrate;
A discharge unit that discharges a processing liquid to a processing region having a width determined from the periphery of the substrate among the upper surface of the substrate rotated by the substrate rotating mechanism;
A cleaning unit for cleaning the processing region in contact with the processing region of the substrate rotated by the substrate rotation mechanism;
With
The discharge part is
The substrate processing apparatus which discharges the said process liquid toward the main discharge area | region previously prescribed | regulated to the semicircular area | region of the rotation direction downstream of the said board | substrate with respect to the said washing | cleaning part among the rotation traces of the said process area | region. The substrate processing apparatus according to claim 1,
The discharge direction when the discharge unit discharges the processing liquid is along a tangent line at a portion of the peripheral edge of the substrate adjacent to the main discharge region as viewed from above the discharge unit in the rotation axis direction of the substrate. A substrate processing apparatus, wherein the substrate processing apparatus is a slanting direction having a component toward the downstream side in the rotation direction of the substrate and a component from the center side to the peripheral side along the direction orthogonal to the tangent line. The substrate processing apparatus according to claim 1 or 2, wherein
A gas is jetted from above the substrate toward a jetting target area defined in advance on the upper surface of the substrate, provided above a portion of the upper surface of the substrate between the cleaning unit and the rotation axis of the substrate. Accordingly, the substrate processing apparatus further includes a gas injection unit that generates a gas flow from the injection target region toward the cleaning unit on the substrate. The substrate processing apparatus according to claim 3, wherein
The gas injection unit includes an injection port for injecting the gas to the injection target region,
The ejection port is a slit-like ejection port, and includes the portion of the peripheral edge of the substrate that comes into contact with the cleaning unit when seen through the gas ejection unit in the direction of the rotation axis of the substrate. And a substrate processing apparatus which is curved along the proximity of the substrate and has a long shape in the circumferential direction of the substrate. The substrate processing apparatus according to claim 3, wherein
The gas injection unit includes a plurality of injection ports for injecting the gas to the injection target region,
The plurality of spray ports are along a proximity portion with the cleaning unit including a portion of the peripheral edge of the substrate that comes into contact with the cleaning unit when seen through the gas injection unit in the direction of the rotation axis of the substrate. A substrate processing apparatus, wherein the substrate processing apparatuses are arranged apart from each other on a curved virtual line. The substrate processing apparatus according to claim 3, wherein
The gas injection unit includes an injection port for injecting the gas to the injection target region,
The ejection port is a slit-shaped ejection port, and when viewed through the gas ejection unit in the direction of the rotation axis of the substrate, along the portion of the outer peripheral surface of the cleaning unit facing the peripheral edge of the substrate. The substrate processing apparatus is curved and has a long shape in the circumferential direction of the cleaning unit. The substrate processing apparatus according to claim 3, wherein
The gas injection unit includes a plurality of injection ports for injecting the gas to the injection target region,
The plurality of injection ports are on an imaginary line that curves along a portion of the outer peripheral surface of the cleaning unit facing the peripheral edge of the substrate when viewed through the gas injection unit in the direction of the rotation axis of the substrate. Substrate processing apparatuses that are arranged apart from each other.

Images