JP2009059876A - Substrate processing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate processing method in which the inside of a substrate surface of a circular disk is uniformly washed in a washing treatment by mixing and discharging a compressed gas and a treating chemical. <P>SOLUTION: Particles on the substrate can be removed through a treatment wherein mist is discharged to the pattern-formed substrate using a two-fluid nozzle mixing the compressed gas and chemical to produce the mist. A substrate radius vector component v<SB>r</SB>of a two-fluid nozzle moving speed (v) is set in inverse proportion to the distance (r) from the substrate center and then variance in washing scan time per unit area in the substrate surface is reduced in the substrate treatment to reduce washing variance. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a substrate processing method for processing a substrate by supplying a chemical solution to a semiconductor substrate or a glass substrate, and relates to a technique for uniformly removing particles on the substrate.

  A semiconductor integrated circuit is formed on a semiconductor substrate through various manufacturing processes. In the manufacturing process, unnecessary particles (fine dust) adhere to the surface of the semiconductor substrate, but this particle causes a decrease in manufacturing yield and product reliability, so it is necessary to remove the particles from the substrate surface. is there. The process of removing such particles from the substrate surface is a cleaning process. In recent years, along with rapid miniaturization of semiconductor integrated circuits, in the cleaning process, both suppression of damage to a pattern formed on a substrate and high removal performance for particles on the substrate are required. The following Patent Document 1 describes a substrate cleaning using a two-fluid nozzle that mixes two kinds of fluids as a cleaning method that can satisfy this requirement. In addition to the above requirements, as the diameter of a semiconductor substrate increases, it is also required to uniformly clean the substrate surface. The following Patent Document 2 describes a nozzle moving speed control method for uniformly cleaning a substrate.

  FIG. 8 is a diagram showing a schematic configuration of a substrate processing apparatus having a two-fluid nozzle. In this substrate processing apparatus, the substrate W is disposed on a disk-shaped spin chuck 101. The spin chuck 101 is provided with column-shaped support pins 101A. FIG. 8 shows two of the six support pins 101A. These supporting pins 101A support the peripheral edge of the substrate W. The spin chuck 101 is rotatably supported in a horizontal plane by a rotating shaft 102 connected to the bottom surface, and an electric motor 103 rotationally drives the rotating shaft 102. The substrate W is rotated around the rotation center C by the rotation driving. Note that the center of the substrate W coincides with the rotation center C.

  A two-fluid nozzle 104 is disposed above the substrate W. The two-fluid nozzle 104 mixes the pressurized gas and the cleaning liquid to form a mist M. The substrate W is cleaned by discharging and supplying the mist M to the rotating substrate W by the two-fluid nozzle 104. The anti-scattering cup 105 provided around the spin chuck 101 prevents the mist M discharged from the two-fluid nozzle 104 from being scattered around when the substrate W is cleaned. The anti-scattering cup 105 is configured to be movable up and down with respect to the spin chuck 101 as indicated by an arrow in the figure. When the uncleaned substrate W is transferred to the spin chuck 101, it is lowered from the position shown in FIG. 8, and when the substrate W placed on the spin chuck 101 is cleaned, it is raised to the position shown in FIG. The periphery of the substrate W is covered.

  The support arm 106 supports the two-fluid nozzle 104 with the discharge port of the two-fluid nozzle 104 in a direction perpendicular to the processing surface of the substrate W. The support arm 106 is configured to be moved up and down by a drive mechanism 107. At the time of cleaning, the discharge port of the two-fluid nozzle 104 is disposed at a position away from the processing surface of the substrate W by a distance K due to its elevation. This distance K is, for example, in a range from 5 mm to 10 mm. The support arm 106 may be configured to be able to swing in parallel to the horizontal plane, and the two-fluid nozzle 104 may cross the processing surface of the substrate W.

A gas introduction pipe 108 </ b> A for introducing pressurized gas and a chemical solution introduction pipe 108 </ b> B for supplying a chemical solution are connected to the body portion of the two-fluid nozzle 104. Gas is supplied from the gas supply device 109 to the gas introduction pipe 108A. A control valve 110 and a pressure regulator 111 are disposed in the gas flow path. The control valve 110 opens and closes the flow path, and the pressure regulator 111 performs pressure adjustment such as pressurization and decompression of the gas. As this gas, a rare gas such as argon (Ar) or an inert gas such as nitrogen (N ₂ ) is used. By using a gas that is chemically stable at normal temperature and normal pressure, such as argon or nitrogen, a chemical reaction is not caused to the chemical solution, the substrate, and the pattern, so that the chemical solution, the substrate, and the pattern are not adversely affected.

On the other hand, ultrapure water to which carbon dioxide (CO ₂ ) is added is supplied as a chemical solution from the ultrapure water supply device 113 connected through the control valve 112 to the chemical solution introduction pipe 108B. The reason why the ultrapure water added with carbon dioxide is used as the chemical solution is that the specific resistance value is small, the static electricity generated by the friction between the processing surface of the substrate W and the chemical solution can be suppressed, and the dielectric breakdown of the substrate W can be prevented. is there.

  The controller 114 controls the electric motor 103, the drive mechanism 107, the gas supply device 109, the control valves 110 and 112, the pressure regulator 111, the ultrapure water supply device 113, and the like. According to the control, the cleaning process and the drying process of the substrate W are performed.

  When performing the cleaning process, first, the anti-scattering cup 105 is lowered with respect to the spin chuck 101, and the patterned substrate W is placed on the spin chuck 101. Then, the splash prevention cup 105 is raised and the drive mechanism 107 is controlled to move the two-fluid nozzle 104 to the cleaning position.

  Next, while controlling the electric motor 103 to rotate the substrate W at a low speed (for example, about 300 to 700 rpm), the mist M is supplied from the two-fluid nozzle 104 to the substrate W, and the mist M is supplied to the substrate W. To discharge. While discharging the mist M onto the substrate W, the two-fluid nozzle 104 scans the substrate W so that the substrate W is evenly cleaned. In the substrate processing apparatus of FIG. 8, the two-fluid nozzle 104 scans an arc-shaped locus passing through the center of the substrate W at a constant speed according to the control of the drive mechanism 107. For example, the two-fluid nozzle 104 is scanned by reciprocating from one end of the substrate W to the other end through the substrate center, or reciprocating between the end of the substrate W and the substrate center. In this state, after the substrate processing is performed for a certain time, the discharge of the mist M is stopped and the two-fluid nozzle 104 is moved to the standby position. At the same time, the substrate W is rotated at a high speed (for example, about 2000 to 3000 rpm) to perform a drying process for shaking off the discharged chemical solution, and a series of cleaning processes is completed.

  FIG. 9 is a cross-sectional view showing the configuration of the two-fluid nozzle. The mixing portion of the two-fluid nozzle 104 has a double tube structure in which the chemical solution introduction tube 108B surrounds the gas introduction tube 108A. The tip 201 of the two-fluid nozzle 104 is configured by connecting an orifice-shaped tube and an acceleration tube that is a straight cylindrical tube that accelerates the mist M. The usage amount (flow rate) of the gas G in the two-fluid nozzle 104 is in a range from 20 L / min to 100 L / min, and preferably in a range from 20 L / min to 60 L / min. The usage amount of the chemical S in the two-fluid nozzle 104 is in the range from 10 mL / min to 200 mL / min, preferably in the range from 100 mL / min to 200 mL / min, and more preferably from 100 mL / min to 150 mL / min. Range. This is because particles are removed without damaging the pattern of the substrate W.

  The conditions for cleaning by the above-described substrate processing apparatus are, for example, a distance from the discharge port that discharges the misted cleaning liquid S to the processing surface of the substrate W is 10 mm, the amount of gas used is 60 L / min, and the amount of drug S used is 150 mL / min. At this time, the droplet diameter of the misted chemical liquid S is controlled in a range from 5 μm to 20 μm. Moreover, the rotation speed of the board | substrate W at the time of low speed rotation can be 500 rpm.

  In this cleaning method, particles on the substrate are removed by the impact force at the time of collision between the chemical liquid fine particles forming the mist M and the substrate W. For this reason, the particle removal force at a certain location on the substrate W is proportional to the time during which the mist M is discharged to that location, that is, the scanning time of the two-fluid nozzle 104. Therefore, in this cleaning method, it is necessary to suppress variations in the scanning time of the two-fluid nozzle 104 in the plane of the substrate W in order to improve cleaning uniformity.

  In the following Patent Document 2, when the two-fluid nozzle 104 is scanned with respect to the substrate W from one substrate end of the substrate W to the other substrate end through the rotation center C shown in FIG. A scanning method that suppresses variations in the scanning time depending on the position on the substrate W is disclosed. The scanning method described in Patent Document 2 will be described with reference to FIG.

  As shown in FIG. 10, on the substrate W, the area S of the ring Q having a width Δr with the circle at the distance r from the substrate center (rotation center C) as the center line is calculated by the following formula 1.

If two-fluid nozzle 104 is assumed scans the straight line N passing through the center of the substrate, the moving speed of the two-fluid nozzle 104 when (hereinafter, referred to as the nozzle moving speed.) And the v _O, the ring Q shown in FIG. 10 2 The time t _c required for the fluid nozzle 104 to cross is calculated by the following equation 2.

  Therefore, in the ring Q, the scanning time D (hereinafter referred to as scanning density D) per unit area of the two-fluid nozzle 104 is calculated by the following Equation 3.

Formula 3 shows that when the nozzle moving speed v _O is constant, the scanning density D decreases as the distance r from the center of the substrate increases. That is, when the nozzle moving speed v _O is constant, the cleaning power becomes nonuniform in the plane of the substrate W. In order to keep the scanning density D constant, the nozzle moving speed is made inversely proportional to the distance r from the substrate center as a function v (r) of the distance r from the substrate center C in accordance with the following Expression 4 modified from Equation 3. Just do it. In Equation 4, the scanning density D is a desired constant.

However, in Equation 4, the velocity v (r) diverges infinitely at the center of the substrate, that is, r = 0. For this reason, it is difficult to actually realize such movement speed control. Therefore, in Patent Document 2, the space from the substrate center to the substrate edge is divided into a plurality of annular sections at arbitrary specific points, and at each specific point, the velocity v (r) is inversely proportional to the distance r, or It is described that the nozzle moving speed is set so as to be approximately inversely proportional, and the nozzle moving speed is controlled to be approximately a linear function with respect to the distance r from the center of the substrate in the annular section.
JP 2003-22994 A JP 2005-93694 A

By applying the control of the nozzle moving speed described above, it is possible to reduce the variation in cleaning power as compared with the case where the two-fluid nozzle 104 is moved at a constant moving speed v _O. However, the calculations of Formulas 1 to 4 assume that the movement trajectory of the two-fluid nozzle 104 is a straight line. That is, it is assumed that the distance that the two-fluid nozzle 104 scans each circular ring divided between the substrate center and the substrate edge is constant in each circular ring.

  In the substrate processing apparatus as shown in FIG. 8, the two-fluid nozzle 104 is generally driven by the motor of the drive mechanism 107 and is expected to be used in the future. In this case, the movement trajectory of the nozzle is an arc centered on the rotation axis of the motor. When the movement locus of the two-fluid nozzle 104 is an arc, as shown in FIG. 10, the intersection point P between the inner circumference of the ring Q and the movement locus K of the arc-shaped nozzle and the straight line N passing through the substrate center, and the nozzle movement With respect to the trajectory K, the nozzle movement trajectory K has a larger distance for scanning in the ring Q. Further, the angle formed by the tangent line K1 of the nozzle movement locus K and the straight line N at the intersection point P increases as the distance between the intersection point P and the substrate center increases. That is, as the ring Q moves away from the center of the substrate, the distance that the arc-shaped nozzle movement locus K scans the ring Q increases. Therefore, when the nozzle movement trajectory is an arc, the scanning density D increases in the periphery of the substrate except in the vicinity of the center of the substrate where the nozzle movement speed cannot be controlled according to the inversely proportional expression. For this reason, even when the above-described nozzle movement speed control is applied, the nozzle scanning time per unit area is not necessarily constant.

  In the coordinate system shown in FIG. 11, the above contents are mathematically expressed as follows. In FIG. 11, the center of the substrate is the origin. Further, the substrate radius is a, and the motor rotation axis of the two-fluid nozzle 104 is the coordinates (0, -α). The position coordinates of the two-fluid nozzle 104 at time t are (x, y). In this case, the two-fluid nozzle 104 scans on an arc L having a radius α with the coordinate (0, −α) as the center. Therefore, the position coordinates (x, y) satisfy the following formula 5.

Moreover, the moving speed v ₁ = (v _1x , v _1y ) of the two-fluid nozzle 104 satisfies the following formula 6 obtained by differentiating both sides of formula 5 with respect to time.

When the nozzle moving speed v ₁ is inversely proportional to the distance r from the substrate center, the nozzle moving speed v ₁ can be expressed by the following Equation 7 by introducing a constant b.

The nozzle moving speed v ₁ and the distance r from the center of the substrate satisfy the following expressions 8 and 9.

  When the two fluid nozzles 104 are located at the substrate edge at time t = 0 and the boundary conditions of the two fluid nozzles 104 are solved to obtain the position coordinates (x, y) of the two fluid nozzles 104, the coordinate y is It is calculated by the following formula 10.

  FIG. 12 is a diagram illustrating the dependence of the nozzle scanning density D on the distance r from the substrate center, calculated using Expression 10 and Expression 5. In FIG. 12, in order to exclude the substrate center where the moving speed diverges, the dependency is calculated in a range excluding 10 mm from the substrate center. The substrate radius a is 200 mm, and the distance α from the substrate center to the rotation axis of the nozzle drive motor is 250 mm. Then, the scanning density is obtained by dividing the substrate surface into an annulus having a diametrical width of 10 mm and dividing the time required for the nozzle to scan each annulus by the area of each annulus. Note that the horizontal axis of FIG. 12 is the distance from the substrate center on the outer periphery of each ring, and the vertical axis is the scanning density D of the two-fluid nozzle 104 in each ring. In the calculation of FIG. 12, the constant b in Expression 7 is set to 1000. From FIG. 12, it can be seen that in the conventional method, the nozzle scanning density D increases as the distance from the center of the substrate increases, and the cleaning power becomes non-uniform.

  The present invention has been proposed in view of the above-described conventional circumstances, and provides a substrate processing method capable of reducing variations in cleaning power when the nozzle movement locus is an arc centered on a motor rotation axis. It is an object.

  The outline of the invention disclosed in the present application will be described as follows. First, the present invention is premised on a substrate processing method for processing a substrate by exposing the substrate surface to a mist-like processing chemical liquid formed by mixing pressurized gas and a processing chemical liquid and discharging the mixture from a nozzle. . Then, when processing the substrate, the nozzle is controlled so that the movement locus is on an arc and the radial component of the substrate (substrate radial component) of the moving speed is inversely proportional to the distance from the substrate center. This is a substrate processing method. Alternatively, it is a substrate processing method in which the radial component of the moving speed is controlled to be inversely proportional to the distance from the substrate center at any plurality of locations on the substrate.

  In the present invention, the substrate moving diameter component of the moving speed of the nozzle is inversely proportional to the distance from the center of the substrate corresponding to the movement trajectory of the nozzle, or the substrate moving diameter component of the moving speed at any plurality of locations on the substrate. Is controlled so as to be inversely proportional to the distance from the center of the substrate, the substrate surface can be cleaned uniformly.

Hereinafter, a substrate processing method according to the present invention will be described with reference to the drawings. In the present embodiment, the substrate processing method according to the present invention is embodied by an example applied to a substrate processing apparatus including the two-fluid nozzle 104 (hereinafter referred to as the nozzle 104) described in the background art with reference to FIG. ing. In the present embodiment, it is assumed that the nozzle 104 operates at a nozzle moving speed v ₂ along an arcuate locus by driving a motor. In this embodiment, the nozzle 104 is operated so that the radial direction component (substrate radial component) v _2r of a circular substrate such as a semiconductor substrate of the nozzle moving speed v ₂ vector is inversely proportional to the distance r from the substrate center.

  First, details of the movement speed control of the nozzle 104 in the present embodiment will be specifically described with reference to the coordinate system shown in FIG. In FIG. 1, the substrate center (hereinafter referred to as the substrate center C) that coincides with the rotation center C is the origin, and the motor rotation axis of the nozzle 104 is the coordinates (0, α). In this case, the nozzle 104 scans on an arc having a radius α with the coordinate (0, α) as the center. Therefore, the nozzle coordinates (x, y) satisfy the following formula 11.

Further, the nozzle moving speed v ₂ = (v _2x , v _2y ) satisfies the following Expression 12 obtained by differentiating both sides of Expression 11 with respect to time.

In the present embodiment, in order to suppress a decrease in the nozzle scanning density on the outer periphery of the substrate, the substrate radius _vector component v _2r of the nozzle velocity v ₂ is inversely proportional to the distance r from the substrate center C as described above. For this reason, the substrate radius vector component v _2r can be expressed by the following Equation 13 by introducing a constant d.

Further, the substrate moving radius component v _2r of the nozzle moving speed v ₂ can be expressed by the following formula 14 by an angle δ (see FIG. 2) formed by a straight line passing through the origin and the nozzle 104 and the nozzle speed v ₂ . it can.

  FIG. 2 is an enlarged view showing a main part of FIG. As shown in FIG. 2, an angle formed between a straight line passing through the origin and the nozzle 104 and the X axis of the coordinate system is defined as an angle θ, a straight line passing through the motor rotation axis and the nozzle 104, and an X of the coordinate system When an angle formed with the axis is defined as an angle φ, δ = π / 2− (θ + φ) or δ = θ. Therefore, the angle δ satisfies Expression 15.

  When Equations 12 to 15 are solved for y with the boundary condition that the nozzle 104 is at the substrate end at time t = 0, Equation 16 below is obtained.

  Further, when Expression 16 is substituted into Expression 11 and solved for x, the following Expression 17 is obtained when x ≧ 0.

  FIG. 3 is a diagram illustrating the dependence of the nozzle scanning density D on the distance from the substrate center C, calculated using Equations 16 and 17. In FIG. In FIG. 3, the dependence is calculated in a range excluding the range of 10 mm from the substrate center C. In FIG. 3, the substrate radius a is 200 mm, and the distance α from the substrate center C to the rotation axis of the nozzle drive motor is 250 mm. Then, the substrate surface is divided into annulus having a diametrical width of 10 mm, and the scanning density is determined by the time required for the nozzle 104 to scan each of the annulus. That is, the time t at which the nozzle 104 passes through the boundary of each ring is calculated using Equations 16 and 17, respectively. The difference in time obtained for adjacent boundaries becomes the scanning time of each ring. Then, the scanning density D is obtained by dividing the scanning time of each ring by the area of each ring. Note that the horizontal axis in FIG. 3 is the distance from the substrate center C on the outer periphery of each ring, and the vertical axis is the nozzle scanning density D. In the calculation of FIG. 3, the constant d of Expression 13 is 1000. FIG. 3 shows the nozzle scanning density by the conventional nozzle movement speed control shown in FIG. 12 as a comparative example.

  As shown in FIG. 3, in this embodiment, the nozzle scanning density D is constant up to the substrate edge, and the cleaning power compared to the conventional method in which the moving speed of the nozzle 104 is inversely proportional to the distance r from the substrate center C. Can be understood to be uniform. Such control of the nozzle movement speed of the present embodiment is realized by controlling the drive mechanism 107 through the control device 114 in the substrate processing apparatus shown in FIG. Thereby, uniform substrate processing can be realized.

Incidentally, also in this embodiment, the nozzle speed at the substrate center C diverges infinitely (see Equation 13). Therefore, it is necessary to correct the nozzle moving speed in the vicinity of the substrate center C. Therefore, in this embodiment, the nozzle is scanned using the nozzle moving speed control described above from the position where the distance from the substrate center C exceeds 10 mm to the substrate end. In a region where the distance from the substrate center C is within 10 mm, the nozzle movement speed v is corrected by a linear function of the following Expression 18 with respect to the distance r (mm) from the substrate center C. In Equation 18, the nozzle speed at the substrate center C is v _a , and the nozzle moving speed at a position 10 mm from the substrate center C is v _b .

  Next, the constant d will be described. The value of the constant d is set according to the scanning time from the substrate center C to the substrate edge. As described above, when the nozzle 104 is scanned by the above-described nozzle movement speed control that satisfies Expressions 16 and 17 from the position 10 mm away from the substrate center C to the substrate end, the substrate center C to the substrate The scanning time to the edge is substantially determined by the scanning time between the position at a distance of 10 mm from the substrate center C, which occupies about 95% of the nozzle scanning distance, and the substrate edge. Therefore, the value of the constant d for a desired scanning time can be approximately calculated by the following mathematical formula 19 obtained by solving the mathematical formula 16 for the constant d.

In Equation 19, in the coordinate system shown in FIG. 1, a coordinate value when the nozzle 104 is at a distance of 10mm from the substrate center C as a y _d. For example, the substrate radius a is 150 mm (diameter 300 mm), the distance α from the substrate center C to the motor rotation shaft that drives the nozzle 104 is 200 mm, and the time required for nozzle scanning from the substrate center C to the substrate edge is 12 seconds. Shall be set. In this case, the constant d can be obtained by substituting the y coordinate y _d of the nozzle 104 at a = 150, α = 200, t = 12, and r = 10 into Equation 19. In this case, d = 933.

FIG. 4 shows the nozzle moving speed v _{2 with} respect to the distance r from the substrate center C when the substrate radius a is 150 mm (diameter 300 mm) and the distance α from the substrate center C to the motor rotation shaft for driving the nozzle 104 is 200 mm. FIG. In FIG. 4, the nozzle moving speed at the substrate center C is 150 mm / sec and the constant d is 1000 (the time required for nozzle scanning from the substrate center C to the substrate edge is about 12 seconds). FIG. 4 shows data by conventional nozzle movement speed control as a comparative example. As shown in FIG. 4, in this embodiment, the substrate moving diameter component of the nozzle moving speed is inversely proportional to the distance r from the substrate center C, so that the nozzle moving speed is different from the conventional one. FIG. 5 is a diagram showing the nozzle scanning density D in each circular ring when the substrate surface is divided into circular rings with a width of 10 mm in the nozzle movement speed control of the present embodiment shown in FIG. As shown in FIG. 5, it can be understood that cleaning can be performed uniformly without increasing the nozzle scanning density D from the position 10 mm from the substrate center C to the substrate end. In FIG. 5, data by conventional nozzle movement speed control is shown as a comparative example.

FIG. 6 shows the nozzle moving speed with respect to the distance r from the substrate center C when the substrate radius a is 200 mm (diameter 400 mm) and the distance α from the substrate center C to the motor rotation shaft for driving the nozzle 104 is 250 mm. v is a diagram showing the distribution of the _two. In FIG. 6, the nozzle moving speed at the substrate center C is 150 mm / sec and the constant d is 1000 (the time required for nozzle scanning from the substrate center C to the substrate edge is about 20 seconds). FIG. 7 is a diagram showing the nozzle scanning density D in each ring when the substrate surface is divided into 10 mm wide rings in the nozzle movement speed control of this embodiment shown in FIG. 6. As shown in FIG. 7, the cleaning can be performed uniformly without increasing the nozzle scanning density D from the position of 10 mm from the substrate center to the substrate end. In FIG. 7 as well, data by conventional nozzle movement speed control is shown as a comparative example.

  Therefore, in the substrate processing apparatus shown in FIG. 8, the above-described moving speed control is applied to the two-fluid nozzle 104 by the control of the driving mechanism 107 through the control device 114, as shown in FIG. 5 and FIG. A uniform cleaning process can be realized.

In the nozzle movement speed control described above, the substrate moving radius component of the nozzle movement speed is made inversely proportional to the distance r from the substrate center C. However, the same effect can be obtained if the substrate moving diameter component of the nozzle moving speed is substantially in inverse proportion to the distance r from the substrate center C. That is, if the substrate moving radius component of the nozzle moving speed satisfies an inversely proportional relationship with the distance r from the substrate center C at any plurality of locations on the substrate, the nozzle 104 is moved at a constant speed between these arbitrary locations. You may move it with. For example, the substrate surface is divided into a plurality of concentric rings centered on the substrate center C. In accordance with the distance r between one end of each circular ring and the substrate center C, the substrate radius vector component v _2r of the nozzle moving speed v ₂ corresponding to the distance r is determined, which satisfies the relationship of Equations 16 and 17. To do. When the nozzles 104 are located above each ring, the same effect can be obtained even if the nozzles 104 are scanned at a constant speed at the nozzle moving speed determined at one end of the ring. Note that the width of each ring may be the same or different.

The nozzle moving speed v ₂ at the distance r ₁ that satisfies the expressions 16 and 17 is expressed by the following expression 20 from the expressions 13 to 15 and 17.

Therefore, the nozzle moving speed v _{12 in} the section between the distance r ₁ and the distance r ₂ (r ₁ > r ₂ ) from the substrate center C can be expressed by the following Expression 21, for example.

As described above, according to the present embodiment, the circular substrate is pressurized by setting the substrate moving diameter component v _{2r of} the nozzle moving speed v ₂ in inverse proportion to the distance r from the substrate center C. In a substrate processing apparatus that performs a cleaning process by mixing and discharging a gas and a processing chemical solution, a uniform cleaning process can be realized within the substrate surface.

  The present invention is not limited to the embodiment described above, and various modifications and applications are possible without departing from the technical idea of the present invention. For example, the present invention can be applied not only to a scrubber cleaning process in a process having no pattern on the substrate, such as after deposition of a thin film by CVD or furnace treatment, but also after photolithography and dry etching, after gate formation and interlayer insulation. It is useful in a scrubber cleaning process for a substrate having an uneven pattern, such as particle removal after processing a groove of a contact via connecting a wiring or a wiring layer to a film.

  Further, the present invention is for cleaning a semiconductor substrate having a diameter of 200 mm or more for manufacturing a semiconductor integrated circuit device having a fine pattern dimension by a manufacturing process of 130 nm node or less (90 nm, 65 nm, 45 nm, etc.). It is particularly effective. This is because the larger the diameter is, the more the locus of the nozzle 104 deviates from the straight line.

  A semiconductor device having these fine patterns is mainly manufactured using a semiconductor substrate having a diameter of 300 mm, and may be manufactured using a semiconductor substrate having a diameter of 450 mm in the future. In such an integrated circuit cleaning process, fine particles are more problematic than the current yield, and the substrate diameter is increased, so that the conventional method has non-uniform nozzle scanning density as shown in FIGS. Increases sex. Therefore, a more uniform cleaning effect will be required in the future, but the present invention is extremely effective against such trends.

  The present invention is not only in the field of manufacturing semiconductor devices such as LSI and ULSI, but also in a substrate processing apparatus that performs a cleaning process by mixing and discharging a pressurized gas and a processing chemical solution to a circular substrate regardless of the substrate material. Available technology.

Explanatory drawing of nozzle movement control in one embodiment of the present invention 1 is an enlarged view of the main part of FIG. The figure which shows the distance dependence from the substrate center of the nozzle scanning density in one Embodiment of this invention. The figure which shows the distance dependence from the substrate center of the nozzle scanning speed in one Embodiment of this invention. The figure which shows the distance dependence from the substrate center of the nozzle scanning density in one Embodiment of this invention. The figure which shows the distance dependence from the substrate center of the nozzle scanning speed in one Embodiment of this invention. The figure which shows the distance dependence from the substrate center of the nozzle scanning density in one Embodiment of this invention. The figure which shows schematic structure of the substrate processing apparatus provided with the 2 fluid nozzle. Sectional drawing which shows structure of 2 fluid nozzle Explanatory drawing of conventional nozzle movement control Explanatory drawing when a conventional nozzle scans an arc-shaped trajectory The figure which shows the distance dependence from the substrate center of the conventional nozzle scanning density

Explanation of symbols

101 Spin chuck 101A Support pin 102 Rotating shaft 103 Electric motor 104 Two-fluid nozzle 105 Splash prevention cup 106 Support arm 107 Drive mechanism 108A Gas introduction pipe 108B Chemical liquid introduction pipe 109 Gas supply device 110 Control valve 111 Pressure regulator 112 Control valve 113 Pure water supply device 114 Controller 201 Two-fluid nozzle tip

Claims (5)

Formed by moving the nozzle in a circular arc shape through the center of the substrate to the end of the substrate above the circular substrate, and mixing the pressurized gas and the treatment chemical solution and discharging them from the nozzle A substrate processing method for exposing the substrate surface to the treated mist-like chemical solution to process the substrate,
A substrate processing method, wherein a radial component of the moving speed of the nozzle with respect to the substrate is inversely proportional to a distance of the nozzle from the center of the substrate.   The substrate according to claim 1, wherein when the nozzle is above an area within a predetermined distance from the center of the substrate, the moving speed of the nozzle is a linear function of the distance of the nozzle from the center of the substrate. Processing method.   The substrate processing method according to claim 1, wherein the gas is an inert gas or a rare gas.   The substrate processing method according to claim 1, wherein the processing for the substrate is cleaning processing for removing particles adhering to the substrate.   The substrate processing method according to claim 1, wherein a diameter of the substrate is 200 mm or more.

Images