JP2015167234A - Two-fluid nozzle, and substrate liquid processing device and substrate liquid processing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a two-fluid nozzle capable of uniformly spraying small-diameter liquid droplets of a processing liquid, and a substrate liquid processing device and a substrate liquid processing method using the two-fluid nozzle.SOLUTION: There is provided a two-liquid nozzle (34) in which a processing liquid discharged from a liquid discharge part (48) and a gas discharged from a gas discharge port (52) are mixed and liquid droplets of the processing liquid thereby generated are sprayed toward a processing target body. In the two-liquid nozzle, the liquid discharge part (48) comprises a plurality of liquid discharge ports (47) arranged on the same circumference on the inner side of the gas discharge port (52). The plurality of liquid discharge ports (47) are arranged such that a gap between the neighboring liquid discharge ports (47) is set to the one where the processing liquids discharged from the respective liquid discharge ports (47) do not come into contact with each other, and the respective processing liquids discharged from the plurality of liquid discharge ports (47) and the gas discharged from the gas discharge port (52) are made to collide in the vicinity below the liquid discharge part (48) and the gas discharge port (52), thereby to generate the liquid droplets of the processing liquid.

Description

  The present invention provides a two-fluid nozzle for spraying droplets of a processing liquid generated by mixing a processing liquid discharged from a liquid discharge unit and a gas discharged from a gas discharge port toward an object to be processed. The present invention relates to a substrate liquid processing apparatus and a substrate liquid processing method for performing liquid processing on a substrate using a two-fluid nozzle.

  Conventionally, when manufacturing a semiconductor component, a flat panel display or the like, a substrate such as a semiconductor wafer or a liquid crystal substrate is liquid-treated with a treatment liquid such as a cleaning liquid.

  In a substrate liquid processing apparatus that performs liquid processing on a substrate, a two-fluid nozzle is used to spray droplets of the processing liquid on the surface of the substrate.

  The two-fluid nozzle forms a circular liquid discharge portion for discharging the processing liquid at the center of the lower end portion, and forms an annular gas discharge port for discharging gas outside the liquid discharge portion. Yes. The two-fluid nozzle discharges a predetermined flow rate of processing liquid downward from the liquid discharge portion, and discharges a predetermined flow rate of gas from the gas discharge port toward the inner processing liquid. (Below) mixes the processing liquid and gas, disperses the processing liquid at the gas discharge pressure to generate droplets of the processing liquid, and sprays the mist-like processing liquid droplets toward the substrate. (For example, refer to Patent Document 1).

JP 2004-356317 A

  However, in the above-described conventional two-fluid nozzle, the processing liquid discharged in a columnar shape downward from the circular liquid discharge portion at the center of the lower end of the two-fluid nozzle is converted into gas discharged from the gas discharge port on the outside. Disperse to generate droplets of the processing liquid. In such a conventional two-fluid nozzle, the treatment liquid is not dispersed well, droplets having a small particle size are formed, and the generated droplets have non-uniform particle sizes. There was a possibility that the processing effect (for example, cleaning effect, etc.) may be reduced.

  Therefore, in the present invention, in the two-fluid nozzle that sprays the liquid droplets of the processing liquid generated by mixing the processing liquid discharged from the liquid discharge portion and the gas discharged from the gas discharge port toward the object to be processed, the liquid The discharge unit is configured by a plurality of liquid discharge ports arranged on the same circumference inside the gas discharge port, and the plurality of liquid discharge ports discharge the interval between adjacent liquid discharge ports from each liquid discharge port. By setting the interval at which the processing liquids do not contact each other, the processing liquid discharged from the plurality of liquid discharge ports and the gas discharged from the gas discharge ports in the vicinity below the liquid discharge portion and the gas discharge ports And the droplets of the processing liquid are generated.

  Further, the interval between the liquid discharge port and the gas discharge port is determined to be an interval at which the processing liquid discharged from the adjacent liquid discharge ports is mixed with the gas without being in contact with each other.

  In the plurality of liquid discharge ports, the interval between adjacent liquid discharge ports is equal to or larger than the diameter of the liquid discharge port.

  Further, the gas discharge port has a slit shape.

  In addition, the gas discharge port discharges gas downward.

  Moreover, it has decided to have the swirl | flow flow generation part which swirls and discharges gas from the said gas discharge port.

  According to the present invention, in a substrate liquid processing apparatus for processing a substrate with a droplet of a processing liquid, the substrate holding means for rotating while holding the substrate, the substrate held by the substrate holding means are enclosed, and the processing liquid is received. A cup and a two-fluid nozzle that discharges a droplet of the processing liquid onto the substrate. The two-fluid nozzle mixes the processing liquid discharged from the liquid discharge portion and the gas discharged from the gas discharge port to drop the liquid. The liquid discharge unit is configured with a plurality of liquid discharge ports arranged on the same circumference inside the gas discharge port, and the plurality of liquid discharge ports each define an interval between adjacent liquid discharge ports. By setting the intervals at which the processing liquids discharged from the liquid discharge ports do not come into contact with each other, the respective processing liquids and the gas discharge ports discharged from the plurality of liquid discharge ports in the vicinity below the liquid discharge unit and the gas discharge ports Against the gas discharged from We decided to produce droplets of the treatment liquid by.

  Further, the interval between the liquid discharge port and the gas discharge port is determined to be an interval at which the processing liquid discharged from the adjacent liquid discharge ports is mixed with the gas without being in contact with each other.

  In the present invention, the substrate is processed by spraying droplets of the treatment liquid generated by mixing the treatment liquid discharged from the liquid discharge portion of the two-fluid nozzle and the gas discharged from the gas discharge port toward the substrate. In the substrate liquid processing method in which liquid processing is performed with liquid droplets, liquid processing is performed using the two-fluid nozzle.

  In the present invention, the processing liquid discharged outward from each liquid discharge port of the liquid discharge unit and the gas discharged from the gas discharge port are mixed. As a result, the processing liquid discharged from each liquid discharge port is well dispersed and the particle diameter of the processing liquid droplets can be made uniform, so that the liquid processing effect by the processing liquid droplets can be improved. it can.

The top view which shows a substrate liquid processing apparatus. The schematic diagram which shows a substrate processing chamber. Front sectional view showing a two-fluid nozzle. The enlarged bottom view. II sectional drawing of FIG. Explanatory drawing which shows a gas supply flow path.

  Hereinafter, specific configurations of a two-fluid nozzle, a substrate liquid processing apparatus having the two-fluid nozzle, and a substrate liquid processing method using the two-fluid nozzle according to the present invention will be described with reference to the drawings.

  As shown in FIG. 1, the substrate liquid processing apparatus 1 includes a plurality of substrates 2 (in this case, semiconductor wafers) (for example, 25 wafers) as objects to be processed at the front end, and is loaded and unloaded by a carrier 3. A substrate carrying-in / out unit 4 is provided, a substrate carrying unit 5 for carrying the substrate 2 accommodated in the carrier 3 is provided at the rear of the substrate carrying-in / out unit 4, and the substrate 2 is cleaned at the rear of the substrate carrying unit 5 A substrate processing unit 6 for performing various processes such as drying and drying is provided.

  The substrate carry-in / out unit 4 places the four carriers 3 in close contact with the front wall 7 of the substrate transport unit 5 with a gap left and right.

  The substrate transfer unit 5 accommodates a substrate transfer device 8 and a substrate delivery table 9 inside. Then, the substrate transport unit 5 transports the substrate 2 between any one of the carriers 3 placed on the substrate carry-in / out unit 4 and the substrate delivery table 9 using the substrate transport device 8.

  The substrate processing unit 6 accommodates the substrate transfer apparatus 10 in the center, and accommodates the substrate processing chambers 11 to 22 side by side on the left and right sides of the substrate transfer apparatus 10.

  Then, the substrate processing unit 6 uses the substrate transfer device 10 to transfer the substrates 2 one by one between the substrate transfer table 9 of the substrate transfer unit 5 and each of the substrate processing chambers 11 to 22. The substrates 2 are processed one by one using ~ 22.

  Each of the substrate processing chambers 11 to 22 has the same configuration, and the configuration of the substrate processing chamber 11 will be described as a representative. As shown in FIG. 2, the substrate processing chamber 11 includes a substrate holding means 23 for rotating the substrate 2 while being held horizontally, and a processing liquid (here, the substrate 2 held by the substrate holding means 23). , A treatment liquid discharge means 24 for discharging the cleaning liquid) and a rinse liquid discharge means 25 for discharging the rinse liquid toward the upper surface of the substrate 2 held by the substrate holding means 23. The substrate holding means 23, the processing liquid discharge means 24, and the rinse liquid discharge means 25 are controlled by the control means 26. The control means 26 controls the entire substrate liquid processing apparatus 1 such as the substrate transfer apparatuses 8 and 10.

  The substrate holding means 23 is provided with a disk-like table 28 horizontally at the upper end of the rotating shaft 27, and a plurality of the peripheral edges of the table 28 are in contact with the peripheral edge of the substrate 2 and hold the substrate 2 horizontally. Substrate holders 29 are attached at intervals in the circumferential direction. A rotation drive mechanism 30 is connected to the rotation shaft 27. The rotation drive mechanism 30 rotates the rotating shaft 27 and the table 28 to rotate the substrate 2 held by the substrate holder 29 on the table 28. The rotation drive mechanism 30 is connected to the control means 26 and is controlled to rotate by the control means 26.

  Further, a cup 31 having an upper opening is provided around the substrate holding means 23 so as to be movable up and down, and the substrate 2 placed on the table 28 is surrounded by the cup 31 to prevent the processing liquid and the rinsing liquid from scattering. Receive treatment and rinse solution. An elevating mechanism 32 is connected to the cup 31. The lifting mechanism 32 moves the cup 31 up and down relatively with respect to the substrate 2. The elevating mechanism 32 is connected to the control means 26 and is controlled to be raised and lowered by the control means 26.

  The treatment liquid discharge means 24 is arranged so that the arm 33 can be moved horizontally above the table 28, and an external mixing type two-fluid nozzle 34 is attached to the tip of the arm 33 as a treatment liquid discharge nozzle. A moving mechanism 35 is connected to the arm 33. The moving mechanism 35 moves the two-fluid nozzle 34 horizontally between a retreat position outside the substrate 2 and a start position above the central portion of the substrate 2. The moving mechanism 35 is connected to the control means 26 and is controlled to move by the control means 26.

  Further, the processing liquid discharge means 24 forms a liquid supply flow path 36 for supplying a processing liquid to the two-fluid nozzle 34 and a gas supply flow path 37 for supplying a gas to the two-fluid nozzle 34. .

  A liquid supply source 38 for supplying a processing liquid (cleaning liquid) is connected to the liquid supply flow path 36 via a flow rate regulator 39. The flow rate regulator 39 adjusts the flow rate of the processing liquid supplied to the two-fluid nozzle 34. The flow rate regulator 39 is connected to the control means 26, and the control means 26 performs open / close control and flow rate control.

  A gas supply source 40 for supplying gas (nitrogen gas) is connected to the gas supply channel 37 via a flow rate regulator 41. The flow rate regulator 41 adjusts the flow rate of the gas supplied to the two-fluid nozzle 34. The flow rate regulator 41 is connected to the control means 26, and the control means 26 performs open / close control and flow rate control.

  As shown in FIGS. 3 to 5, the two-fluid nozzle 34 forms a liquid channel 44 through which the processing liquid flows inside the nozzle body 42. A nozzle cover 43 is attached to the outer peripheral portion of the nozzle main body 42, and a gas flow path 45 through which gas flows is formed between the outer peripheral concave portion of the nozzle main body 42 and the inner peripheral portion of the nozzle cover 43.

  The liquid channel 44 connects the liquid supply channel 36 to a liquid inlet 46 formed in the upper part of the nozzle body 42. At the lower end of the nozzle body 42, a plurality (32 in this case) of circular hole-like liquid discharge ports 47 are formed on the same circumference, which are inclined obliquely downward from the center of the circumference toward the outer circumference. The plurality of liquid discharge ports 47 constitute a liquid discharge portion 48 for discharging the processing liquid. As a result, the two-fluid nozzle 34 discharges the processing liquid supplied from the liquid supply flow path 36 from the respective liquid discharge ports 47 of the liquid discharge portion 48 in a plurality of thin streaks obliquely downward toward the outer circumferential direction. can do. The liquid discharge ports 47 are formed radially from the inlet formed at the outer peripheral edge of the liquid channel 44 toward the outlet formed outside the inner diameter of the liquid channel 44, so that the processing liquid has a plurality of thin streaks. Are diffused and discharged in a range wider than the inner diameter of the liquid flow path 44.

  The gas flow path 45 connects the gas supply flow path 37 to a gas inlet 49 formed in the upper part of the nozzle cover 43. A swirl flow generating portion 51 including a plurality of (here, six) inclined holes 50 that are inclined downward in a clockwise direction in a plan view is provided at the lower portion of the nozzle body 42, and the tip end portion of the nozzle body 42 A gas discharge port 52 formed of a slit-shaped annular hole concentric with the liquid discharge portion 48 is formed between the nozzle cover 43 and the tip end portion of the nozzle cover 43. As a result, the two-fluid nozzle 34 swirls the gas supplied from the gas supply flow path 37 by the swirl flow generator 51 and discharges the gas downward from the gas discharge port 52. At this time, the gas is preferably discharged in a substantially vertical direction with respect to the substrate 2.

  As described above, the two-fluid nozzle 34 includes a liquid discharge unit 48 in which a plurality of liquid discharge ports 47 that discharge the processing liquid obliquely downward toward the outer periphery of the circumference are arranged on the same circumference. And is formed inside an annular gas discharge port 52 concentrically arranged.

  The two-fluid nozzle 34 discharges the processing liquid obliquely downward in the outer peripheral direction from the plurality of liquid discharge ports 47 of the liquid discharge unit 48 and discharges the gas downward from the slit-shaped gas discharge ports 52. As a result, the treatment liquid and the gas collide near the lower part of the liquid discharge part 48 and the gas discharge port 52, and the treatment liquid is dispersed by the gas discharge pressure to form mist-like treatment liquid droplets. Liquid droplets are sprayed onto the surface of the substrate 2 as the object to be processed. At this time, since the processing liquid is discharged in a plurality of thin streaks, the contact area between the gas and the processing liquid is increased, and droplets having a small particle size can be formed uniformly and efficiently. In addition, since the gas is discharged from the slit-shaped gas discharge port 52, the gas can be uniformly collided with the processing liquid discharged in a streak shape, and uniform droplets can be generated.

  Here, when the processing fluid is discharged from the liquid discharge port 47, the two-fluid nozzle 34 is attracted by the negative pressure generated between the processing liquids discharged from the liquid discharge ports 47 so that the processing liquids do not contact each other. In addition, the interval between the adjacent liquid discharge ports 47 is formed to be greater than a predetermined distance. Specifically, the interval between the outer peripheral ends of the adjacent liquid discharge ports 47 is formed to be equal to or larger than the opening diameter of the liquid discharge port 47. Thereby, it is possible to prevent the processing liquids ejected in a plurality of thin streaks from coming into contact with each other to form a thick cylindrical shape, so that droplets having a small particle diameter can be uniformly generated.

  In addition, the two-fluid nozzle 34 allows the liquid discharge unit 48 to discharge the liquid so that the process liquid and the gas collide immediately after being discharged from each liquid discharge port 47 when the process liquid is discharged from the liquid discharge port 47. The distance between the outlet 47 and the gas discharge port 52 is formed close to a predetermined distance or less. Specifically, it is formed at a distance that collides with gas in a state where the processing liquids discharged from the liquid discharge ports 47 do not contact each other. Thereby, since the treatment liquid collides with the gas in a state of a plurality of fine streaks, it is possible to uniformly generate droplets having a small particle diameter. In addition, if there is a deviation in the discharge angle of the treatment liquid, there may be variations in the height at which the treatment liquid and the gas collide, but if the treatment liquid collides with the gas immediately after being discharged from the liquid discharge port 47, the collision will occur. Variation in height can be suppressed. In this way, uniform droplets can be generated by suppressing variations in the state when the treatment liquid and the gas collide.

  As shown in FIG. 2, the rinsing liquid discharge means 25 is arranged such that the arm 53 can be moved horizontally above the table 28, and a rinsing liquid discharge nozzle 54 is attached to the tip of the arm 53. A moving mechanism 55 is connected to the arm 53. The moving mechanism 55 moves the rinsing liquid discharge nozzle 54 between a retreat position outside the substrate 2 and a start position directly above the center of the substrate 2. The moving mechanism 55 is connected to the control means 26 and is controlled to move by the control means 26.

  The rinsing liquid discharge means 25 connects a rinsing liquid discharge nozzle 54 to a rinsing liquid supply source 56 for supplying a rinsing liquid via a flow rate regulator 57 and a rinsing liquid supply channel 58. The flow rate adjuster 57 adjusts the flow rate of the rinse liquid supplied to the rinse liquid discharge nozzle 54. The flow rate regulator 57 is connected to the control means 26, and the control means 26 performs open / close control and flow rate control.

  The substrate liquid processing apparatus 1 is configured as described above, and the substrate 2 in each substrate processing chamber 11-22 according to a substrate liquid processing program stored in a storage medium 59 readable by the control means 26 (computer). Process. The storage medium 59 may be any medium that can record various programs such as the substrate liquid processing program. Even if it is a semiconductor memory type storage medium such as a ROM or RAM, a disk type storage such as a hard disk or a CD-ROM is used. It may be a medium.

  Next, a substrate processing method executed by the substrate liquid processing program will be described. First, the substrate 2 is taken out from the carrier 3 using the substrate transfer device 8 and transferred to the substrate delivery table 9. The substrate 2 transferred to the substrate delivery table 9 is carried into each of the substrate processing chambers 11 to 22 using the substrate transfer apparatus 10 accommodated in the substrate processing unit 6 and is held by the substrate holder 29. In each of the substrate processing chambers 11 to 22, the rotation driving mechanism 30 is controlled by the control unit 26 to rotate the substrate 2 held by the table 28 and the substrate holder 29 of the substrate holding unit 23 at a predetermined rotation speed. Then, the arm 33 is moved horizontally, and the two-fluid nozzle 34 is moved above the central portion of the substrate 2. Thereafter, the flow rate regulators 39 and 41 are opened and the flow rate is controlled by the control means 26, and the processing liquid and gas supplied from the liquid supply source 38 and the gas supply source 40 are supplied to the liquid discharge unit 48 and the gas discharge of the two-fluid nozzle 34. It discharges toward the upper surface of the board | substrate 2 from the exit 52. FIG.

  As a result, the processing liquid discharged from the liquid discharge portion 48 and the gas discharged from the gas discharge port 52 are mixed below the tip of the two-fluid nozzle 34 to form droplets of the processing liquid. Liquid droplets are sprayed onto the substrate 2.

  Thereafter, the substrate liquid processing program controls the moving mechanism 35 by the control means 26 to reciprocate the arm 33 horizontally. Thus, the two-fluid nozzle 34 is reciprocated between the center of the substrate 2 and the outer peripheral edge of the substrate 2 to perform liquid treatment on the entire surface of the substrate 2. Thereafter, the flow rate regulators 39 and 41 are closed and controlled by the control means 26, and the discharge of the processing liquid and gas from the two-fluid nozzle 34 is stopped. Thereafter, the control mechanism 26 controls the moving mechanism 35 to move the two-fluid nozzle 34 to the retracted position outside the outer periphery of the substrate 2.

  After the processing by the two-fluid nozzle 34 is completed, the moving mechanism 55 is controlled by the control means 26 to move the arm 53 horizontally to move the rinse liquid discharge nozzle 54 above the center of the substrate 2. Thereafter, the rinse liquid supplied from the rinse liquid supply source 56 is discharged toward the upper surface of the substrate 2. While discharging the rinsing liquid, the arm 53 is moved from the upper center of the substrate 2 toward the outer peripheral edge, thereby rinsing the entire surface of the substrate 2. After the rinse liquid discharge nozzle 54 moves to the outside of the outer periphery of the substrate 2, the discharge of the rinse liquid is stopped. Thereafter, the substrate 2 is rotated to perform a drying process.

  After completion of the drying process, the substrate 2 is unloaded from the substrate processing chambers 11 to 22 using the substrate transfer apparatus 10, and is transferred to the carrier 3 through a process reverse to the time of loading.

  Thereby, the whole surface of the substrate 2 can be liquid-processed with the droplets of the processing liquid. Note that when the processing liquids discharged from the adjacent liquid discharge ports 47 come into contact with each other and the processing liquid becomes a columnar shape, it is impossible to form a droplet of the processing liquid uniformly and with a small diameter. Therefore, the processing liquid and the gas are discharged at a flow rate and a flow rate at which the processing liquids discharged from the adjacent liquid discharge ports 47 do not come into contact with each other, so that the liquid droplets of the processing liquid are formed in a uniform and small diameter. In the present embodiment, the treatment liquid discharged from the two-fluid nozzle may be room-temperature pure water or heated pure water. At this time, the temperature of pure water should just be the temperature which does not exceed saturation vapor pressure from the relationship between the temperature in a substrate processing chamber, and humidity. Moreover, it is not restricted to a pure water, A chemical | medical solution may be sufficient.

  As described above, in the substrate liquid processing apparatus 1 and the substrate liquid processing method using the two-fluid nozzle 34 and the two-fluid nozzle 34, the inside of the gas discharge port 52 is used as the liquid discharge portion 48 of the two-fluid nozzle 34. A plurality of liquid discharge ports 47 for discharging the processing liquid obliquely downward toward the outer circumferential direction of the circumference are arranged on the same circumference, and obliquely downward from the respective liquid discharge ports 47 of the liquid discharge portion 48 toward the outer circumferential direction. The discharged processing liquid and the gas discharged downward from the gas discharge port 52 are mixed.

  As a result, since the processing liquid is discharged in a plurality of thin streaks, the contact area between the gas and the processing liquid is increased, and droplets having a small particle diameter can be efficiently and uniformly generated. The liquid treatment effect by the droplets can be improved. Further, since the processing liquid is discharged from the plurality of liquid discharge ports 47 arranged on the circumference, the processing liquid is compared with the conventional two-fluid nozzle that discharges the processing liquid in a columnar shape from the liquid discharge port at the center of the lower end. Can be diffused well. By diffusing the droplets, the range in which the liquid treatment can be performed becomes wide, and the treatment efficiency can be improved.

  In addition, since the gas is discharged from the slit-shaped gas discharge port 52, the gas can be uniformly collided with the processing liquid discharged in a streak shape, and uniform droplets can be generated.

  Further, the two-fluid nozzle 34 is attracted by the negative pressure generated between the processing liquids discharged from the liquid discharge ports 47 when the processing liquid is discharged from the liquid discharge ports 47 of the liquid discharge unit 48, and the processing liquids So that the liquid discharge ports 47 adjacent to each other are not separated from each other by a predetermined distance or more. Thereby, it is possible to prevent the processing liquids ejected in a plurality of thin streaks from coming into contact with each other to form a thick cylindrical shape, so that droplets having a small particle diameter can be uniformly generated.

  Further, the distance between the liquid discharge port 47 and the gas discharge port 52 of the liquid discharge unit 48 is formed close to a predetermined distance or more so that the treatment liquid collides with the gas immediately after being discharged from each liquid discharge port 47. Yes. As a result, the treatment liquid collides with the gas in a state of a plurality of thin streaks, and droplets having a small particle diameter can be uniformly generated. In addition, by causing the treatment liquid to collide with the gas immediately after being discharged from the liquid discharge port 47, variation in the collision height can be suppressed, and variation in the state when the treatment liquid and the gas collide can be suppressed. Drops can be generated uniformly.

  In the substrate liquid processing apparatus 1, as shown in FIG. 6A, a gas is supplied from one gas supply source 40 to the two fluid nozzles 34 of all the substrate processing chambers 11 to 22. That is, the substrate liquid processing apparatus 1 connects a plurality (here, 12) of gas supply channels 37 to the gas supply source 40 in parallel, and each of the gas supply channels 37 includes two substrate processing chambers 11 to 22. A fluid nozzle 34 is connected. Further, the substrate liquid processing apparatus 1 is provided with a flow rate regulator 41 and an opening / closing valve 60 in each gas supply channel 37, and the flow rate regulator 41 and the opening / closing valve 60 are connected to the control means 26. Then, the substrate liquid processing apparatus 1 controls the flow rate regulator 41 by the control means 26 so that the flow rate of the gas supplied from the gas supply flow path 37 to the two-fluid nozzle 34 is a constant flow rate. Yes.

  Control of the gas supplied from the gas supply channel 37 to the two-fluid nozzle 34 is not limited to controlling the gas flow rate to be a constant flow rate, and the discharge pressure of the gas supplied to the two-fluid nozzle 34 is constant pressure. It can also be controlled so that

  For example, as shown in FIG. 6B, an opening / closing valve 60, a flow rate regulator 41, and a pressure sensor 61 are sequentially provided in each gas supply channel 37 from the upstream side, and these opening / closing valve 60, flow rate regulator 41, pressure The sensor 61 is connected to the control means 26. Then, the flow rate regulator 41 is controlled so that the gas pressure detected by the pressure sensor 61 becomes a predetermined constant pressure. Alternatively, as shown in FIG. 6 (c), each gas supply channel 37 is provided with an opening / closing valve 60, an electropneumatic valve 62, and a pressure sensor 61 in order from the upstream side, and these opening / closing valve 60, electropneumatic valve 62, pressure The sensor 61 is connected to the control means 26. Then, the electropneumatic valve 62 is controlled so that the gas pressure detected by the pressure sensor 61 becomes a predetermined constant pressure. Note that the pressure sensor 61 and the electropneumatic valve 62 may be directly connected to drive the electropneumatic valve 62 so that the gas pressure detected by the pressure sensor 61 becomes a constant pressure.

  Thus, the control of the gas supplied from the gas supply channel 37 to the two-fluid nozzle 34 can be performed by either flow rate control or pressure control. However, when the cross-sectional area (opening area) of the gas discharge port 52 of the two-fluid nozzle 34 through which gas is discharged varies, the flow rate is inversely proportional to the cross-sectional area even if the flow rate is constant. The flow rate will vary greatly. On the other hand, if the pressure is constant, the flow rate is proportional to the pressure. Therefore, even if the cross-sectional area (opening area) of the gas discharge port 52 of the two-fluid nozzle 34 varies, the flow rate is constant. Therefore, in order to make the discharge conditions of the gas discharged from the two-fluid nozzle 34 uniform, it is desirable to supply the gas by pressure control. In particular, when a plurality of two-fluid nozzles 34 are connected in parallel, the cross-sectional area of the gas discharge ports 52 at the two-fluid nozzles 34 may vary. In this case, the gas pressure detected by all the pressure sensors 61 provided in each gas supply channel 37 may be controlled so as to be a predetermined constant pressure.

  When the gas supply to the two-fluid nozzle 34 is performed by pressure control, the pressure range is higher than the pressure at which particles can be satisfactorily removed from the surface of the substrate 2 and lower than the pressure that damages the pattern on the surface of the substrate 2. The gas is supplied in advance to the two-fluid nozzle 34 within the pressure range. In particular, when a plurality of two-fluid nozzles 34 are connected in parallel, the discharge pressure at all the two-fluid nozzles 34 is set within the above range. Further, the pressure loss in the gas supply channel 37 between the pressure sensor 61 and the two-fluid nozzle 34 is reduced, and the pressure sensor 61 and the two-fluid nozzle 34 in each gas supply channel 37 in parallel are reduced. It is desirable to make the pressure loss constant. The liquid supply to the two-fluid nozzle 34 may also be performed by pressure control.

1 Substrate liquid processing device 2 Substrate
34 Two-fluid nozzle
47 Liquid outlet
48 Liquid discharge part
52 Gas outlet

Claims (9)

In the two-fluid nozzle that sprays the liquid droplets of the processing liquid generated by mixing the processing liquid discharged from the liquid discharge portion and the gas discharged from the gas discharge port toward the target object,
The liquid discharge part is composed of a plurality of liquid discharge ports arranged on the same circumference inside the gas discharge port,
The plurality of liquid discharge ports are arranged in the vicinity below the liquid discharge unit and the gas discharge port by setting an interval between adjacent liquid discharge ports so that the processing liquid discharged from each liquid discharge port is not in contact with each other. A two-fluid nozzle that generates droplets of the processing liquid by colliding each processing liquid discharged from a plurality of liquid discharge ports with the gas discharged from the gas discharge port.   2. The fluid according to claim 1, wherein the interval between the liquid discharge port and the gas discharge port is an interval at which the processing liquid discharged from the adjacent liquid discharge ports is mixed with the gas without being in contact with each other. nozzle.   3. The two-fluid nozzle according to claim 1, wherein the plurality of liquid discharge ports have an interval between adjacent liquid discharge ports equal to or larger than a diameter of the liquid discharge port.   The two-fluid nozzle according to claim 1, wherein the gas discharge port has a slit shape.   The two-fluid nozzle according to any one of claims 1 to 4, wherein the gas discharge port discharges gas downward.   The two-fluid nozzle according to any one of claims 1 to 5, further comprising a swirl flow generating unit that swirls and discharges gas from the gas discharge port. In a substrate liquid processing apparatus for processing a substrate with droplets of a processing liquid,
A substrate holding means for rotating while holding the substrate;
A cup that encloses the substrate held by the substrate holding means and receives the processing liquid;
A two-fluid nozzle that ejects droplets of processing liquid onto the substrate;
With
The two-fluid nozzle generates a droplet by mixing the processing liquid discharged from the liquid discharge unit and the gas discharged from the gas discharge port, and the liquid discharge unit is arranged on the same circumference inside the gas discharge port. The plurality of liquid discharge ports are arranged such that the intervals between adjacent liquid discharge ports are such that the processing liquid discharged from each liquid discharge port is not in contact with each other. The treatment liquid ejected from the plurality of liquid ejection openings in the vicinity of the lower part of the ejection section and the gas ejection openings collides with the gas ejected from the gas ejection openings to generate droplets of the treatment liquid. A substrate liquid processing apparatus.   8. The substrate liquid according to claim 7, wherein the interval between the liquid discharge port and the gas discharge port is an interval at which the processing liquid discharged from the adjacent liquid discharge ports is mixed with the gas without contacting each other. Processing equipment. The droplets of the processing liquid generated by mixing the processing liquid discharged from the liquid discharge portion of the two-fluid nozzle and the gas discharged from the gas discharge port are sprayed toward the substrate to liquidate the substrate with the liquid droplets of the processing liquid. In the substrate liquid processing method to be processed,
2. A substrate liquid processing method, comprising performing liquid processing with the two-fluid nozzle according to claim 1.

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