JP2002026389A5 - - Google Patents

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Publication number
JP2002026389A5
JP2002026389A5 JP2000207701A JP2000207701A JP2002026389A5 JP 2002026389 A5 JP2002026389 A5 JP 2002026389A5 JP 2000207701 A JP2000207701 A JP 2000207701A JP 2000207701 A JP2000207701 A JP 2000207701A JP 2002026389 A5 JP2002026389 A5 JP 2002026389A5
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JP
Japan
Prior art keywords
thin film
algan
film
wafer
activated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000207701A
Other languages
English (en)
Japanese (ja)
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JP2002026389A (ja
JP4652530B2 (ja
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Publication date
Application filed filed Critical
Priority to JP2000207701A priority Critical patent/JP4652530B2/ja
Priority claimed from JP2000207701A external-priority patent/JP4652530B2/ja
Priority to EP01305791A priority patent/EP1172867A3/en
Priority to TW090116562A priority patent/TW506143B/zh
Priority to US09/900,962 priority patent/US20020004254A1/en
Publication of JP2002026389A publication Critical patent/JP2002026389A/ja
Publication of JP2002026389A5 publication Critical patent/JP2002026389A5/ja
Application granted granted Critical
Publication of JP4652530B2 publication Critical patent/JP4652530B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2000207701A 2000-07-10 2000-07-10 窒化ガリウム系化合物半導体発光素子の作製方法 Expired - Fee Related JP4652530B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2000207701A JP4652530B2 (ja) 2000-07-10 2000-07-10 窒化ガリウム系化合物半導体発光素子の作製方法
EP01305791A EP1172867A3 (en) 2000-07-10 2001-07-04 Method for producing P-Type Gallium Nitride-Based compound semiconductor, method for producing Gallium Nitride-Based compound semiconductor light-emitting device, and gallium nitride-based compound semiconductor light-emitting device
TW090116562A TW506143B (en) 2000-07-10 2001-07-06 Process for producing p-type gallium nitride-based compound semiconductor, process for producing gallium nitride-based compound semiconductor luminescent element, and gallium nitride-based compound semiconductor luminescent element
US09/900,962 US20020004254A1 (en) 2000-07-10 2001-07-10 Method for producing p-type gallium nitride-based compound semiconductor, method for producing gallium nitride-based compound semiconductor light-emitting device, and gallium nitride-based compound semiconductor light-emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000207701A JP4652530B2 (ja) 2000-07-10 2000-07-10 窒化ガリウム系化合物半導体発光素子の作製方法

Publications (3)

Publication Number Publication Date
JP2002026389A JP2002026389A (ja) 2002-01-25
JP2002026389A5 true JP2002026389A5 (enrdf_load_stackoverflow) 2007-08-23
JP4652530B2 JP4652530B2 (ja) 2011-03-16

Family

ID=18704419

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000207701A Expired - Fee Related JP4652530B2 (ja) 2000-07-10 2000-07-10 窒化ガリウム系化合物半導体発光素子の作製方法

Country Status (3)

Country Link
EP (1) EP1172867A3 (enrdf_load_stackoverflow)
JP (1) JP4652530B2 (enrdf_load_stackoverflow)
TW (1) TW506143B (enrdf_load_stackoverflow)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4581198B2 (ja) * 2000-08-10 2010-11-17 ソニー株式会社 窒化物化合物半導体層の熱処理方法及び半導体素子の製造方法
AUPS240402A0 (en) * 2002-05-17 2002-06-13 Macquarie Research Limited Gallium nitride
KR101081158B1 (ko) 2004-07-08 2011-11-07 엘지이노텍 주식회사 발광 다이오드 제조방법
JP4694395B2 (ja) 2006-03-22 2011-06-08 日本オプネクスト株式会社 窒化物半導体発光素子及びその製造方法
JP2007311375A (ja) * 2006-05-16 2007-11-29 Showa Denko Kk ｐ型ＩＩＩ−Ｖ族化合物半導体の作製方法及び発光素子の作製方法。
JP2008034587A (ja) * 2006-07-28 2008-02-14 Sony Corp 半導体レーザの製造方法、半導体素子の製造方法および素子の製造方法
US7670933B1 (en) * 2007-10-03 2010-03-02 Sandia Corporation Nanowire-templated lateral epitaxial growth of non-polar group III nitrides
EP2881982B1 (en) 2013-12-05 2019-09-04 IMEC vzw Method for fabricating cmos compatible contact layers in semiconductor devices
JP6131908B2 (ja) * 2014-05-08 2017-05-24 豊田合成株式会社 Ｉｉｉ族窒化物半導体の製造方法、発光素子の製造方法
CN113832453A (zh) * 2021-11-03 2021-12-24 聚灿光电科技（宿迁）有限公司 一种mocvd放气装置及具有其的mocvd装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07211903A (ja) * 1993-12-02 1995-08-11 Fujitsu Ltd 半導体装置の製造方法
JPH0832115A (ja) * 1994-07-19 1996-02-02 Sharp Corp 電極構造およびその製造方法
JP3620926B2 (ja) * 1995-06-16 2005-02-16 豊田合成株式会社 ｐ伝導形３族窒化物半導体の電極及び電極形成方法及び素子
JP4018177B2 (ja) * 1996-09-06 2007-12-05 株式会社東芝 窒化ガリウム系化合物半導体発光素子
JP3509514B2 (ja) * 1997-11-13 2004-03-22 豊田合成株式会社 窒化ガリウム系化合物半導体の製造方法
JPH11177134A (ja) * 1997-12-15 1999-07-02 Sharp Corp 半導体素子の製造方法及び半導体素子、並びに発光素子の製造方法及び発光素子
JPH11354458A (ja) * 1998-06-11 1999-12-24 Matsushita Electron Corp ｐ型ＩＩＩ−Ｖ族窒化物半導体およびその製造方法
JP3794876B2 (ja) * 1998-09-09 2006-07-12 松下電器産業株式会社 半導体装置の製造方法

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