JP2002026217A - Method for cutting out semiconductor device, and apparatus - Google Patents

Method for cutting out semiconductor device, and apparatus

Info

Publication number
JP2002026217A
JP2002026217A JP2000202680A JP2000202680A JP2002026217A JP 2002026217 A JP2002026217 A JP 2002026217A JP 2000202680 A JP2000202680 A JP 2000202680A JP 2000202680 A JP2000202680 A JP 2000202680A JP 2002026217 A JP2002026217 A JP 2002026217A
Authority
JP
Japan
Prior art keywords
semiconductor device
cutting
resin
semiconductor
lead
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000202680A
Other languages
Japanese (ja)
Other versions
JP3443799B2 (en
Inventor
Hisashi Yasunaga
尚志 安永
Atsushi Sugimoto
淳 杉本
Masamichi Ishihara
政道 石原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui High Tec Inc
Original Assignee
Mitsui High Tec Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui High Tec Inc filed Critical Mitsui High Tec Inc
Priority to JP2000202680A priority Critical patent/JP3443799B2/en
Publication of JP2002026217A publication Critical patent/JP2002026217A/en
Application granted granted Critical
Publication of JP3443799B2 publication Critical patent/JP3443799B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93Batch processes
    • H01L24/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

PROBLEM TO BE SOLVED: To cut out individual semiconductor devices with high productivity without generating burrs and lead exfoliation, from a semiconductor device row wherein a plurality of lead frames are continuously formed as interposers in many rows or a single row, semiconductor chips are mounted on the lead frames, and the semiconductor chip mounting side is sealed with resin. SOLUTION: The plurality of lead frames are formed continuously in many rows or a single row. The semiconductor chip is mounted on a chip mounting part of each of the lead frames. The chips are electrically connected with leads. The single surfaces of the lead frames mounting the chips are sealed with resin and semiconductor devices are formed. In the method for cutting out each of the devices, the resin-sealed side 9 is put on a table 13, and cutting-out is performed individually from the lead frame 1 side exposed from the sealing resin, by using a rotary cutter 14 or a blade equipped with a slit on the peripheral surface.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は樹脂封止した半導体
装置列から個々の半導体装置を切出す方法、及び切出し
装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and an apparatus for cutting out individual semiconductor devices from a resin-sealed semiconductor device row.

【0002】[0002]

【従来の技術】半導体装置は小型化を要請され、半導体
チップサイズに近似したチップサイズ半導体装置が製造
されるようになってきている。
2. Description of the Related Art Semiconductor devices are required to be reduced in size, and semiconductor devices having a chip size similar to that of a semiconductor chip are being manufactured.

【0003】チップサイズ半導体装置において、リード
フレームをインターポーザーとして製造されるものがあ
る。該半導体装置はリードフレームを多列又は単列とし
て連続的に複数形成し、半導体チップを個々のリードフ
レームの半導体チップ搭載部或いは半導体チップ搭載領
域に搭載し、半導体チップとリードを電気的に金属細線
等を介して接続し、一括して連続的に樹脂封止して、個
々の半導体装置が切出される。
[0003] Some chip size semiconductor devices are manufactured using a lead frame as an interposer. In the semiconductor device, a plurality of lead frames are continuously formed as a multi-row or a single row, semiconductor chips are mounted on a semiconductor chip mounting portion or a semiconductor chip mounting area of each lead frame, and the semiconductor chips and the leads are electrically metallized. The individual semiconductor devices are cut out by connecting them via thin wires or the like and collectively and continuously sealing with resin.

【0004】半導体装置を個々に切出す切断装置として
は例えばダイヤモンドカッター或いはダイサー等があ
り、複数の半導体装置が縦横列に連続して製造されたも
のから、個々の半導体装置を切断し切出している。
[0004] As a cutting device for individually cutting semiconductor devices, there is, for example, a diamond cutter or a dicer. Each of the semiconductor devices is cut and cut from a plurality of semiconductor devices that are manufactured continuously in rows and columns. .

【0005】前記切出しではリードフレームの両面側と
も樹脂封止した半導体装置ではリードが樹脂中にあって
切断バリの発生は幾分抑えられるが、半導体装置の一層
の小型化や熱放散をよくするためにリードフレームの片
面側のみを樹脂封止した半導体装置では切出し時にバリ
が多発する。また、リード剥離も生じる。
In the above-mentioned cutting, in a semiconductor device in which both sides of a lead frame are resin-sealed, the lead is in the resin and the generation of cutting burrs is somewhat suppressed, but the semiconductor device is further reduced in size and heat dissipation is improved. Therefore, in a semiconductor device in which only one side of a lead frame is resin-sealed, burrs are frequently generated at the time of cutting. In addition, lead separation also occurs.

【0006】[0006]

【この発明が解決しようとする課題】前記片面側を樹脂
封止した半導体装置の切出し切断では、被切断材が銅、
銅合金、或いはNiー鉄合金等からなる金属製のリード
と、前記リードとは物性の異なる封止樹脂との複合であ
ることから、切断装置と被切断半導体装置の摩擦による
発熱及び切断熱の影響の違い等により、目詰まり現象を
起こして、切削抵抗が増大し、被切断半導体装置に過負
荷がかかり前記バリが発生するとともにリード剥離を生
じる。かかることは半導体装置を不良品にし問題であ
る。
In the cutting and cutting of the semiconductor device in which one side is sealed with resin, the material to be cut is copper,
Since a lead made of a metal such as a copper alloy or a Ni-iron alloy is a composite of a sealing resin having different physical properties from the lead, heat and cutting heat generated by friction between the cutting device and the semiconductor device to be cut are generated. A clogging phenomenon occurs due to a difference in influences, and a cutting resistance increases, an overload is applied to a semiconductor device to be cut, the burrs are generated, and a lead is peeled. This causes a problem in that the semiconductor device becomes defective.

【0007】また、切断装置は被切断半導体装置との摩
擦により磨耗し破断し易くなり、切断速度を速めること
ができず生産性が低い等の問題がある。
Further, the cutting device is liable to be worn and broken by friction with the semiconductor device to be cut, so that the cutting speed cannot be increased and the productivity is low.

【0008】本発明は、リードフレームをインターポー
ザーとして多列又は単列にて連続的に複数形成し、半導
体チップを搭載し、該半導体チップ搭載側を樹脂封止し
てなる半導体装置列から、個々の半導体装置をバリやリ
ード剥離が生じることなく、且つ、切断速度を速め生産
性よく切出すことを目的とする。さらに、切断性能がす
ぐれた半導体装置切出し装置を目的とする。
According to the present invention, there is provided a semiconductor device array in which a plurality of lead frames are continuously formed in multiple rows or single rows as interposers, semiconductor chips are mounted, and the semiconductor chip mounting side is resin-sealed. It is an object of the present invention to cut individual semiconductor devices without burr and lead peeling, and at high cutting speed with high productivity. Another object of the present invention is to provide a semiconductor device cutting device having excellent cutting performance.

【0009】[0009]

【課題を達成するための手段】本発明の要旨は、リード
フレームを多列又は単列に連続的に複数形成し、半導体
チップを個々のリードフレームの半導体チップ搭載箇所
に搭載し、半導体チップとリードを電気的に接続し、前
記リードフレームの片面側を樹脂封止してなる半導体装
置列から個々の半導体装置を切出す方法において、樹脂
封止した側をテーブルに置き、封止樹脂より露呈してい
るリードフレーム側から回転切断装置で切断し個々に分
割し切り出すところにある。
SUMMARY OF THE INVENTION The gist of the present invention is that a plurality of lead frames are continuously formed in a multi-row or single row, and semiconductor chips are mounted on semiconductor chip mounting portions of individual lead frames. In a method of electrically connecting leads and cutting out individual semiconductor devices from a semiconductor device row in which one side of the lead frame is resin-sealed, the resin-sealed side is placed on a table and exposed from a sealing resin. From the side of the lead frame, which is cut by a rotary cutting device, and divided into individual pieces.

【0010】本発明の他の要旨は、前記リードフレーム
の片側を樹脂封止した側をテーブルに置き、封止樹脂よ
り露呈しているリードフレーム側からスリットを形成し
たブレードで切断し、個々の半導体装置を個々に切出す
ところにある。
Another aspect of the present invention resides in that one side of the lead frame, which is resin-sealed, is placed on a table and cut from a lead frame side, which is exposed from the sealing resin, with a blade having a slit formed therein. This is where semiconductor devices are individually cut out.

【0011】本発明の他の要旨は、前記封止樹脂から露
呈したリードフレームが個々に切断される箇所を樹脂封
止前に薄くするところにある。
Another aspect of the present invention resides in that the portions where the lead frames exposed from the sealing resin are individually cut are thinned before the resin sealing.

【0012】本発明の半導体装置の切出し装置の要旨
は、リードフレームを多列又は単列に連続的に複数形成
され、半導体チップが個々のリードフレームの半導体チ
ップ搭載箇所に搭載され、半導体チップとリードが電気
的に接続され、樹脂封止してなる半導体装置を個々に切
出しする装置において、前記半導体装置を切断する回転
切断装置は周面に間隔をおいてスリットが形成されてい
ることを特徴とする半導体装置の切出し装置にある。
The gist of the semiconductor device cutting device of the present invention is that a plurality of lead frames are continuously formed in a multi-row or a single row, and a semiconductor chip is mounted on a semiconductor chip mounting portion of each lead frame. In a device for individually cutting out semiconductor devices each of which is electrically connected to a lead and sealed with a resin, a rotary cutting device for cutting the semiconductor device is characterized in that slits are formed at intervals on a peripheral surface. Of a semiconductor device.

【0013】本発明の他の要旨は、前記回転切断装置は
ブレードであること、また、前記ブレードは電鋳ブレー
ドである半導体装置の切出し装置にある。
According to another aspect of the present invention, the rotary cutting device is a blade, and the blade is an electroformed blade.

【0014】[0014]

【発明の実施の形態】本発明の1実施例について図面を
参照して述べる。図面において、1は本実施例の半導体
装置製造に用いるリードフレームで、半導体チップを搭
載するパッド2、リード3、サポードバー4が形成され
ている。前記リードフレーム1が縦枠5、横枠6を介在
して縦横に複数形成されている。該リードフレーム1は
金属板をエッチング加工或いはプレス加工により形成さ
れる。この実施例ではパッド2を形成しているが、パッ
ドを設けないリードフレームであってもよく、その場合
は半導体チップはテープ或いは放熱板等を介してリード
上に搭載される。
DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described with reference to the drawings. In the drawing, reference numeral 1 denotes a lead frame used for manufacturing the semiconductor device of the present embodiment, on which pads 2 for mounting a semiconductor chip, leads 3 and support bars 4 are formed. A plurality of the lead frames 1 are formed vertically and horizontally with a vertical frame 5 and a horizontal frame 6 interposed. The lead frame 1 is formed by etching or pressing a metal plate. Although the pad 2 is formed in this embodiment, a lead frame without a pad may be used. In this case, the semiconductor chip is mounted on the lead via a tape or a heat radiating plate.

【0015】7は前記パッド2に搭載された半導体チッ
プで、該半導体チップ7は図2に示すようにリード3と
ボンディングワイヤー8を介して電気的に接続されてい
る。なお、図1には半導体チップ7を点線で示し、ボン
ディングワイヤーは図が煩雑になるので省略している。
Reference numeral 7 denotes a semiconductor chip mounted on the pad 2. The semiconductor chip 7 is electrically connected to the leads 3 via bonding wires 8 as shown in FIG. In FIG. 1, the semiconductor chip 7 is indicated by a dotted line, and bonding wires are omitted because the drawing is complicated.

【0016】半導体チップ7を搭載したリードフレーム
1は、前記半導体チップ7の搭載側を樹脂封止9され
る。この樹脂封止9はリードフレーム1が前記縦横に複
数形成された所定数の全てにわたって一括し連続してな
され半導体装置10が並んだ列が形成される。
The lead frame 1 on which the semiconductor chip 7 is mounted is sealed with resin 9 on the side on which the semiconductor chip 7 is mounted. The resin encapsulation 9 is performed in a lump and continuously over a predetermined number of the plurality of lead frames 1 formed vertically and horizontally to form a row in which the semiconductor devices 10 are arranged.

【0017】前記樹脂封止されてなる半導体装置列11
から個々の半導体装置10を切り出すが、その切り出す
切断線12を図1に点線で示している。図3では矢印線
の下方に切断線12が位置している。
The above-mentioned resin-sealed semiconductor device array 11
The individual semiconductor device 10 is cut out of FIG. 1, and the cutting line 12 to be cut out is shown by a dotted line in FIG. In FIG. 3, the cutting line 12 is located below the arrow line.

【0018】半導体装置列11から個々の半導体装置1
0を切り出す際は、図3に示すように樹脂封止9した側
を切断テーブル13上に置き、封止樹脂から露呈してい
るリードフレーム1側を上面し、回転切断装置14、例
えばブレードを上方から臨ませリードフレーム1側から
樹脂封止9側に向いて切断線12に沿い切断する。この
ようにリードフレーム1側から切断することにより図4
に示すようにリードフレーム1は切断終了近くでの回転
切断装置14との接触面積が小さくなってバリの発生が
防止される。また、例えバリが発生したとしても封止樹
脂内に留まり悪影響は減じられる。
The individual semiconductor devices 1 from the semiconductor device row 11
When cutting out 0, as shown in FIG. 3, the side on which the resin sealing 9 is performed is placed on a cutting table 13, the lead frame 1 side exposed from the sealing resin is faced up, and a rotary cutting device 14, for example, a blade is mounted. It is cut along the cutting line 12 from the lead frame 1 side to the resin sealing 9 side facing from above. By cutting from the lead frame 1 side in this way, FIG.
As shown in (1), the contact area of the lead frame 1 with the rotary cutting device 14 near the end of cutting is reduced, and the occurrence of burrs is prevented. Further, even if burrs are generated, they remain in the sealing resin and the adverse effects are reduced.

【0019】ブレード14には図5のように周面にスリ
ット15を例えば内方向に設け、該ブレード14で半導
体装置列11から個々の半導体装置10を前記のように
切断し切り出すと、前記スリットが切断時の冷却水を絡
め取りブレード14の温度上昇を防ぐ冷却作用、ブレー
ド14の刃そのものとは別の刃の働きををする副切刃作
用、及び、切り子を払い出す除去作用を奏して、ブレー
ド14と被切断半導体装置10との間に発生する摩擦に
よる切削抵抗を低減し、ブレード14の切れ味が一層高
まり、バリやリード剥離の発生をより強く防止し、さら
に切断作業の生産性が向上する。
As shown in FIG. 5, the blade 14 is provided with slits 15 on its peripheral surface, for example, inward, and when the individual semiconductor devices 10 are cut out from the semiconductor device row 11 by the blades 14 as described above, the slits 15 Has a cooling action that entangles the cooling water at the time of cutting to prevent a rise in the temperature of the blade 14, a sub-cutting action that acts as a different blade from the blade itself of the blade 14, and a removing action that dispenses the facets. In addition, the cutting resistance due to the friction generated between the blade 14 and the semiconductor device 10 to be cut is reduced, the sharpness of the blade 14 is further enhanced, the occurrence of burrs and lead peeling is more strongly prevented, and the productivity of the cutting operation is further improved. improves.

【0020】前記スリット15はこの実施例ではブレー
ド14の周面から軸心方向に向いて形成しているが、軸
心を外す向きに形成してもよい。また、スリット15の
個数は任意にでき、スリット15のブレード14周面か
らの深さ及び周面方向の長さは冷却水の一時保留、及び
切り子の払い出し機能を維持し、機械的強度を損なわな
い範囲であれば任意に設定できる。
In this embodiment, the slit 15 is formed to extend in the axial direction from the peripheral surface of the blade 14, but it may be formed so as to deviate from the axial center. The number of the slits 15 can be arbitrarily set, and the depth of the slit 15 from the peripheral surface of the blade 14 and the length in the peripheral surface direction maintain the temporary holding of the cooling water and the function of dispensing the cutting pieces, thereby impairing the mechanical strength. It can be set arbitrarily as long as there is no range.

【0021】ブレード14は種々の材質からなるものが
使用できるが、高強度で耐磨耗性のすぐれた電鋳ブレー
ドにすると切れ味がよく、且つ破損せず、切断速度をよ
り速めることができ半導体装置の切り出し装置として極
めてすぐれる。
The blade 14 can be made of various materials, but if it is made of an electroformed blade having high strength and excellent abrasion resistance, it can be cut sharply without breakage, and the cutting speed can be further increased. It is extremely excellent as a device for cutting out a device.

【0022】また、前記半導体装置10として樹脂封止
する前のリードフレーム1に対して、図6に示すように
切断線12予定箇所をハーフエッチング等で板厚みを薄
く16しておくと、ブレード14による切断速度がより
速められ、バリやリード剥離の発生がより防止される等
の効果を得ることができる。
Further, as shown in FIG. 6, when the semiconductor device 10 is thinned 16 by half-etching or the like at the predetermined position of the cutting line 12 as shown in FIG. 14, the cutting speed can be further increased, and effects such as the occurrence of burrs and lead peeling can be further prevented.

【0023】リードフレーム1の前記ハーフエッチング
等で板厚みを薄くする箇所は切断線12となる線を含ん
だ部分的領域、或いはリード3の全面的領域であっても
よい。
The portion of the lead frame 1 where the plate thickness is reduced by the half-etching or the like may be a partial region including a line serving as the cutting line 12 or an entire region of the lead 3.

【0024】前記実施例では半導体装置の切出し装置
は、リードフレーム1の片側のみを樹脂封止した半導体
装置列11からの個々の半導体装置10の切出しについ
て述べたが、リードフレーム1の両面側を樹脂封止した
半導体装置列からの切出しにも適用できる。
In the above embodiment, the semiconductor device cutting device has been described for cutting individual semiconductor devices 10 from the semiconductor device row 11 in which only one side of the lead frame 1 is resin-sealed. The present invention can also be applied to cutting from a resin-sealed semiconductor device row.

【0025】[0025]

【発明の効果】本発明の第1発明は、前記のように半導
体チップを搭載したリードフレームの片面側を樹脂封止
してなる半導体装置を個々に分割する際、樹脂封止面を
テーブル上に置き、露呈しているリードフレーム側から
回転切断装置で切断し個々の半導体装置を切出しするの
で、回転切断装置はリードフレーム側から樹脂封止面側
へ切断して行き、切断終了近くでのリードフレームとの
接触面積が小さくなり、バリやリード剥離の発生が防止
される。
According to the first invention of the present invention, when dividing a semiconductor device in which one side of a lead frame on which a semiconductor chip is mounted is resin-sealed as described above, the resin sealing surface is placed on a table. To cut out individual semiconductor devices by cutting from the exposed lead frame side with the rotary cutting device, so the rotary cutting device cuts from the lead frame side to the resin sealing surface side, and near the end of cutting. The contact area with the lead frame is reduced, thereby preventing burrs and lead peeling.

【0026】本発明の第2発明は、回転切断装置のブレ
ードにはスリットが外周に間隔をおいて形成され、該ブ
レードで前記リードフレーム側から切断し個々の半導体
装置を切出すので、スリットが切断時の冷却水を絡め取
りブレードの温度上昇を防ぐ作用、ブレードそのものと
は別の刃の働きをする副切刃作用、及び、切り子を払い
出す除去作用を奏し、切断性が一層高まり、バリ及びリ
ード剥離をより一層防止し、切断作業の生産性がさらに
向上する。
According to a second aspect of the present invention, a slit is formed on an outer periphery of a blade of a rotary cutting device at an interval, and the blade is cut from the lead frame side to cut out an individual semiconductor device. The cutting water is entangled with cooling water to prevent the temperature of the blade from rising, the sub-cutting blade acts as a blade separate from the blade itself, and the removal function for dispensing the cutting chips. Further, lead separation is further prevented, and the productivity of the cutting operation is further improved.

【0027】本発明の第3発明は、前記リードフレーム
を切断線領域について板厚みが薄されているので、切断
速度をより速くできる等の効果がある。
According to the third aspect of the present invention, since the thickness of the lead frame in the cutting line region is reduced, the cutting speed can be increased.

【0028】本発明の第4発明から第5発明による半導
体装置の切出し装置によれば、回転切断装置のブレード
は前記のようにスリットが形成され、切断時の切削抵抗
を減少させ、且つ切断性が高まり、バリやリード剥離を
防止し、また切断装置が長寿命化する等の効果がある。
According to the semiconductor device cutting device according to the fourth to fifth aspects of the present invention, the blade of the rotary cutting device is formed with the slit as described above to reduce the cutting resistance at the time of cutting and to improve the cutting performance. And the effect of preventing burrs and peeling of the lead and prolonging the life of the cutting device.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の1実施例において半導体装置の製造に
用いるリードフレームを示す図。
FIG. 1 is a view showing a lead frame used for manufacturing a semiconductor device in one embodiment of the present invention.

【図2】本発明の1実施例において半導体装置の製造を
示す図。
FIG. 2 is a diagram showing the manufacture of a semiconductor device according to one embodiment of the present invention.

【図3】本発明の1実施例において半導体装置列からの
半導体装置の切出しを示す図。
FIG. 3 is a diagram showing cutting of a semiconductor device from a semiconductor device row in one embodiment of the present invention.

【図4】本発明の1実施例においてブレードによる切断
作用を説明するための図。
FIG. 4 is a view for explaining a cutting action by a blade in one embodiment of the present invention.

【図5】本発明の1実施例においてスリットを形成した
ブレードを示す図。
FIG. 5 is a view showing a blade having a slit formed in one embodiment of the present invention.

【図6】本発明の1実施例においてリードフレームの切
断線領域を薄厚みとした半導体装置を示す図。
FIG. 6 is a diagram showing a semiconductor device in which a cutting line region of a lead frame is thin in one embodiment of the present invention.

【符号の説明】[Explanation of symbols]

1 リードフレーム 2 パッド 3 リード 4 サポートバー 5 縦枠 6 横枠 7 半導体チップ 8 ボンディングワイヤー 9 樹脂封止 10 半導体装置 11 半導体装置列 12 切断線 13 切断テーブル 14 回転切断装置(ブレード) 15 スリット 16 薄肉箇所 DESCRIPTION OF SYMBOLS 1 Lead frame 2 Pad 3 Lead 4 Support bar 5 Vertical frame 6 Horizontal frame 7 Semiconductor chip 8 Bonding wire 9 Resin sealing 10 Semiconductor device 11 Semiconductor device row 12 Cutting line 13 Cutting table 14 Rotary cutting device (blade) 15 Slit 16 Thin Location

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】 リードフレームを多列又は単列に連続的
に複数形成し、半導体チップを個々のリードフレームの
半導体チップ搭載箇所に搭載し、半導体チップとリード
を電気的に接続し、半導体チップを搭載したリードフレ
ームの片面側を樹脂封止してなる半導体装置を個々に分
割する方法において、樹脂封止した側をテーブルに置
き、封止樹脂より露呈しているリードフレーム側から回
転切断装置で切断し個々に分割することを特徴とする半
導体装置の切出し方法。
1. A semiconductor device comprising: a plurality of lead frames continuously formed in a multi-row or a single row; semiconductor chips mounted on semiconductor chip mounting locations of individual lead frames; and electrically connecting the semiconductor chips and the leads. In a method of individually dividing a semiconductor device in which one side of a lead frame on which resin is mounted is resin-sealed, the resin-sealed side is placed on a table, and a rotary cutting device is exposed from the lead frame side exposed from the sealing resin. And dividing the semiconductor device into individual devices.
【請求項2】 リードフレームを多列又は単列に連続的
に複数形成し、半導体チップを個々のリードフレームの
半導体チップ搭載箇所に搭載し、半導体チップとリード
を電気的に接続し、半導体チップを搭載したリードフレ
ームの片面側を樹脂封止してなる半導体装置を個々に分
割する方法において、樹脂封止した側をテーブルに置
き、封止樹脂より露呈しているリードフレーム側からス
リットが形成されたブレードで切断し個々に分割するこ
とを特徴とする半導体装置の切出し方法。
2. A semiconductor device comprising: a plurality of lead frames formed continuously in multiple rows or a single row; semiconductor chips mounted on semiconductor chip mounting locations of individual lead frames; and electrically connecting the semiconductor chips and the leads. In a method of individually dividing a semiconductor device in which one side of a lead frame mounting a resin is resin-sealed, the resin-sealed side is placed on a table, and a slit is formed from the lead frame side exposed from the sealing resin. A method for cutting out a semiconductor device, comprising cutting the semiconductor device with a set blade and dividing the semiconductor device into individual pieces.
【請求項3】 前記露呈したリードフレームの個々に切
断される箇所を事前に板厚みを薄くすることを特徴とす
る請求項1又は請求項2記載の半導体装置の切出し方
法。
3. The method for cutting out a semiconductor device according to claim 1, wherein the thickness of each of the exposed cut portions of the lead frame is reduced in advance.
【請求項4】 リードフレームを多列又は単列に連続的
に複数形成し、半導体チップを個々のリードフレームの
半導体チップ搭載箇所に搭載し、半導体チップとリード
を電気的に接続し、樹脂封止してなる半導体装置を個々
に分割する装置において、前記半導体装置を切断する回
転切断装置は周面に間隔をおいてスリットが形成されて
いることを特徴とする半導体装置の切出し装置。
4. A plurality of lead frames are continuously formed in a multi-row or a single row, semiconductor chips are mounted on semiconductor chip mounting portions of individual lead frames, and the semiconductor chips and the leads are electrically connected to each other. In a device for dividing a stopped semiconductor device individually, a rotary cutting device for cutting the semiconductor device has slits formed at intervals on a peripheral surface thereof.
【請求項5】 前記回転切断装置はブレードであること
を特徴とする請求項4記載の半導体装置の切出し装置。
5. The cutting device for a semiconductor device according to claim 4, wherein said rotary cutting device is a blade.
【請求項6】 前記ブレードは電鋳ブレードであること
を特徴とする請求項5記載の半導体装置の切出し装置。
6. The apparatus according to claim 5, wherein the blade is an electroformed blade.
JP2000202680A 2000-07-04 2000-07-04 Method and apparatus for cutting out semiconductor device Expired - Fee Related JP3443799B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000202680A JP3443799B2 (en) 2000-07-04 2000-07-04 Method and apparatus for cutting out semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000202680A JP3443799B2 (en) 2000-07-04 2000-07-04 Method and apparatus for cutting out semiconductor device

Publications (2)

Publication Number Publication Date
JP2002026217A true JP2002026217A (en) 2002-01-25
JP3443799B2 JP3443799B2 (en) 2003-09-08

Family

ID=18700173

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000202680A Expired - Fee Related JP3443799B2 (en) 2000-07-04 2000-07-04 Method and apparatus for cutting out semiconductor device

Country Status (1)

Country Link
JP (1) JP3443799B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1447847A3 (en) * 2003-02-13 2004-09-29 Atlantic Technology (UK) Ltd. Lead frame for an electronic component package
JP2007242643A (en) * 2006-02-13 2007-09-20 Disco Abrasive Syst Ltd Device and method of dividing package substrate

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1447847A3 (en) * 2003-02-13 2004-09-29 Atlantic Technology (UK) Ltd. Lead frame for an electronic component package
JP2007242643A (en) * 2006-02-13 2007-09-20 Disco Abrasive Syst Ltd Device and method of dividing package substrate
JP4643464B2 (en) * 2006-02-13 2011-03-02 株式会社ディスコ Package substrate dividing method and dividing apparatus

Also Published As

Publication number Publication date
JP3443799B2 (en) 2003-09-08

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