JP3443799B2 - Method and apparatus for cutting out semiconductor device - Google Patents

Method and apparatus for cutting out semiconductor device

Info

Publication number
JP3443799B2
JP3443799B2 JP2000202680A JP2000202680A JP3443799B2 JP 3443799 B2 JP3443799 B2 JP 3443799B2 JP 2000202680 A JP2000202680 A JP 2000202680A JP 2000202680 A JP2000202680 A JP 2000202680A JP 3443799 B2 JP3443799 B2 JP 3443799B2
Authority
JP
Japan
Prior art keywords
cutting
semiconductor device
resin
semiconductor
blade
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000202680A
Other languages
Japanese (ja)
Other versions
JP2002026217A (en
Inventor
尚志 安永
淳 杉本
政道 石原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui High Tech Inc
Original Assignee
Mitsui High Tech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui High Tech Inc filed Critical Mitsui High Tech Inc
Priority to JP2000202680A priority Critical patent/JP3443799B2/en
Publication of JP2002026217A publication Critical patent/JP2002026217A/en
Application granted granted Critical
Publication of JP3443799B2 publication Critical patent/JP3443799B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93Batch processes
    • H01L24/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は樹脂封止した半導体
装置列から個々の半導体装置を切出す方法、及び切出し
装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for cutting out individual semiconductor devices from a resin-sealed semiconductor device array and a cutting-out device.

【0002】[0002]

【従来の技術】半導体装置は小型化を要請され、半導体
チップサイズに近似したチップサイズ半導体装置が製造
されるようになってきている。
2. Description of the Related Art A semiconductor device is required to be miniaturized, and a chip size semiconductor device which is close to a semiconductor chip size has been manufactured.

【0003】チップサイズ半導体装置において、リード
フレームをインターポーザーとして製造されるものがあ
る。該半導体装置はリードフレームを多列又は単列とし
て連続的に複数形成し、半導体チップを個々のリードフ
レームの半導体チップ搭載部或いは半導体チップ搭載領
域に搭載し、半導体チップとリードを電気的に金属細線
等を介して接続し、一括して連続的に樹脂封止して、個
々の半導体装置が切出される。
Some chip size semiconductor devices are manufactured using a lead frame as an interposer. In this semiconductor device, a plurality of lead frames are continuously formed in multiple rows or a single row, and the semiconductor chips are mounted on a semiconductor chip mounting portion or a semiconductor chip mounting area of each lead frame, and the semiconductor chips and the leads are electrically metalized. Individual semiconductor devices are cut out by connecting them through a thin wire or the like and collectively and continuously sealing them with resin.

【0004】半導体装置を個々に切出す切断装置として
は例えばダイヤモンドカッター或いはダイサー等があ
り、複数の半導体装置が縦横列に連続して製造されたも
のから、個々の半導体装置を切断し切出している。
As a cutting device for individually cutting the semiconductor devices, there is, for example, a diamond cutter or a dicer, and each semiconductor device is cut and cut from a plurality of semiconductor devices which are continuously manufactured in a row and a row. .

【0005】前記切出しではリードフレームの両面側と
も樹脂封止した半導体装置ではリードが樹脂中にあって
切断バリの発生は幾分抑えられるが、半導体装置の一層
の小型化や熱放散をよくするためにリードフレームの片
面側のみを樹脂封止した半導体装置では切出し時にバリ
が多発する。また、リード剥離も生じる。
In the above-mentioned cutting, in the semiconductor device in which both sides of the lead frame are resin-sealed, the leads are in the resin and the occurrence of cutting burrs is somewhat suppressed, but further miniaturization of the semiconductor device and better heat dissipation are improved. Therefore, in a semiconductor device in which only one side of the lead frame is resin-sealed, burrs frequently occur at the time of cutting. Also, lead peeling occurs.

【0006】[0006]

【この発明が解決しようとする課題】前記片面側を樹脂
封止した半導体装置の切出し切断では、被切断材が銅、
銅合金、或いはNiー鉄合金等からなる金属製のリード
と、前記リードとは物性の異なる封止樹脂との複合であ
ることから、切断装置と被切断半導体装置の摩擦による
発熱及び切断熱の影響の違い等により、目詰まり現象を
起こして、切削抵抗が増大し、被切断半導体装置に過負
荷がかかり前記バリが発生するとともにリード剥離を生
じる。かかることは半導体装置を不良品にし問題であ
る。
In the cutting and cutting of the semiconductor device whose one side is resin-sealed, the material to be cut is copper,
Since the lead made of metal such as copper alloy or Ni-iron alloy and the encapsulation resin having different physical properties are combined, heat generated by friction between the cutting device and the semiconductor device to be cut and cutting heat are generated. Due to a difference in influence or the like, a clogging phenomenon occurs, cutting resistance increases, an overload is applied to the semiconductor device to be cut, the burr is generated, and lead peeling occurs. This causes the semiconductor device to be defective and is a problem.

【0007】また、切断装置は被切断半導体装置との摩
擦により磨耗し破断し易くなり、切断速度を速めること
ができず生産性が低い等の問題がある。
Further, there is a problem that the cutting device is easily worn and broken due to friction with the semiconductor device to be cut, the cutting speed cannot be increased, and the productivity is low.

【0008】本発明は、リードフレームをインターポー
ザーとして多列又は単列にて連続的に複数形成し、半導
体チップを搭載し、該半導体チップ搭載側を樹脂封止し
てなる半導体装置列から、個々の半導体装置をバリやリ
ード剥離が生じることなく、且つ、切断速度を速め生産
性よく切出すことを目的とする。さらに、切断性能がす
ぐれた半導体装置切出し装置を目的とする。
According to the present invention, a plurality of lead frames are continuously formed in multiple rows or a single row as an interposer, semiconductor chips are mounted, and the semiconductor chip mounting side is resin-sealed. It is an object of the present invention to cut individual semiconductor devices with high productivity by increasing the cutting speed without causing burrs and peeling of leads. Another object of the present invention is to provide a semiconductor device cutting device having excellent cutting performance.

【0009】[0009]

【課題を達成するための手段】本発明の要旨は、リード
フレームを多列又は単列に連続的に複数形成し、半導体
チップを個々のリードフレームの半導体チップ搭載箇所
に搭載し、半導体チップとリードを電気的に接続し、前
記リードフレームの片面側を樹脂封止して成る半導体装
置列から個々の半導体装置を切出す方法において、樹脂
封止した側をテーブルに置き、封止樹脂より露呈してい
るリードフレーム側から周面にスリットが形成されたブ
レードで切断し個々に分割し切出すところにある。
SUMMARY OF THE INVENTION The gist of the present invention is to form a plurality of lead frames continuously in multiple rows or a single row, and mount the semiconductor chips at the semiconductor chip mounting locations of the individual lead frames. In a method of cutting individual semiconductor devices from a semiconductor device row in which leads are electrically connected and one surface side of the lead frame is resin-sealed, the resin-sealed side is placed on a table and exposed from the sealing resin. From the side of the lead frame that is being cut, the blade is cut with a blade having a slit formed on the peripheral surface, and is individually divided and cut out.

【0010】[0010]

【0011】[0011]

【0012】本発明の半導体装置の切出し装置の要旨
は、リードフレームを多列又は単列に連続的に複数形成
され、半導体チップを個々のリードフレームの半導体チ
ップ搭載箇所に搭載され、半導体チップとリードが電気
的に接続され、樹脂封止して成る半導体装置を個々に切
出しする装置において、前記半導体装置を切断するブレ
ードは周面に間隔をおいてスリットが形成されているこ
とを特徴とする半導体装置の切出し装置にある。
The gist of the semiconductor device cutting device of the present invention is that a plurality of lead frames are continuously formed in multiple rows or a single row, and semiconductor chips are mounted at the semiconductor chip mounting locations of the individual lead frames. In a device for cutting semiconductor devices each having leads electrically connected to each other and resin-sealed, blades for cutting the semiconductor devices are formed with slits at intervals on a peripheral surface. It is in a cutting device for a semiconductor device.

【0013】[0013]

【0014】[0014]

【発明の実施の形態】本発明の1実施例について図面を
参照して述べる。図面において、1は本実施例の半導体
装置製造に用いるリードフレームで、半導体チップを搭
載するパッド2、リード3、サポードバー4が形成され
ている。前記リードフレーム1が縦枠5、横枠6を介在
して縦横に複数形成されている。該リードフレーム1は
金属板をエッチング加工或いはプレス加工により形成さ
れる。この実施例ではパッド2を形成しているが、パッ
ドを設けないリードフレームであってもよく、その場合
は半導体チップはテープ或いは放熱板等を介してリード
上に搭載される。
BEST MODE FOR CARRYING OUT THE INVENTION An embodiment of the present invention will be described with reference to the drawings. In the drawing, reference numeral 1 is a lead frame used for manufacturing the semiconductor device of the present embodiment, in which a pad 2 for mounting a semiconductor chip, a lead 3, and a support bar 4 are formed. A plurality of lead frames 1 are formed vertically and horizontally with a vertical frame 5 and a horizontal frame 6 interposed therebetween. The lead frame 1 is formed by etching or pressing a metal plate. Although the pad 2 is formed in this embodiment, it may be a lead frame without a pad, in which case the semiconductor chip is mounted on the lead via a tape or a heat radiating plate.

【0015】7は前記パッド2に搭載された半導体チッ
プで、該半導体チップ7は図2に示すようにリード3と
ボンディングワイヤー8を介して電気的に接続されてい
る。なお、図1には半導体チップ7を点線で示し、ボン
ディングワイヤーは図が煩雑になるので省略している。
Reference numeral 7 denotes a semiconductor chip mounted on the pad 2, and the semiconductor chip 7 is electrically connected to the lead 3 via a bonding wire 8 as shown in FIG. In FIG. 1, the semiconductor chip 7 is shown by a dotted line, and the bonding wire is omitted because the drawing becomes complicated.

【0016】半導体チップ7を搭載したリードフレーム
1は、前記半導体チップ7の搭載側を樹脂封止9され
る。この樹脂封止9はリードフレーム1が前記縦横に複
数形成された所定数の全てにわたって一括し連続してな
され半導体装置10が並んだ列が形成される。
The lead frame 1 on which the semiconductor chip 7 is mounted is resin-sealed 9 on the mounting side of the semiconductor chip 7. The resin encapsulation 9 is collectively and continuously made over a predetermined number of the lead frames 1 formed in the vertical and horizontal directions to form a row in which the semiconductor devices 10 are arranged.

【0017】前記樹脂封止されてなる半導体装置列11
から個々の半導体装置10を切り出すが、その切り出す
切断線12を図1に点線で示している。図3では矢印線
の下方に切断線12が位置している。
The semiconductor device row 11 formed by resin sealing
The individual semiconductor devices 10 are cut out from the above, and the cutting line 12 cut out is shown by a dotted line in FIG. In FIG. 3, the cutting line 12 is located below the arrow line.

【0018】半導体装置列11から個々の半導体装置1
0を切り出す際は、図3に示すように樹脂封止9した側
を切断テーブル13上に置き、封止樹脂から露呈してい
るリードフレーム1側を上面し、回転切断装置14、例
えばブレードを上方から臨ませリードフレーム1側から
樹脂封止9側に向いて切断線12に沿い切断する。この
ようにリードフレーム1側から切断することにより図4
に示すようにリードフレーム1は切断終了近くでの回転
切断装置14との接触面積が小さくなってバリの発生が
防止される。また、例えバリが発生したとしても封止樹
脂内に留まり悪影響は減じられる。
Individual semiconductor devices 1 from the semiconductor device row 11
When cutting out 0, the resin-sealed 9 side is placed on the cutting table 13 as shown in FIG. 3, the lead frame 1 side exposed from the sealing resin is faced up, and the rotary cutting device 14, for example, a blade is attached. The lead frame 1 is faced from above and cut along the cutting line 12 from the lead frame 1 side toward the resin sealing 9 side. As shown in FIG.
As shown in (4), the lead frame 1 has a small contact area with the rotary cutting device 14 near the end of cutting, thus preventing the occurrence of burrs. Further, even if burrs are generated, they remain in the sealing resin and the adverse effects are reduced.

【0019】ブレード14には図5のように周面にスリ
ット15を例えば内方向に設け、該ブレード14で半導
体装置列11から個々の半導体装置10を前記のように
切断し切り出すと、前記スリットが切断時の冷却水を絡
め取りブレード14の温度上昇を防ぐ冷却作用、ブレー
ド14の刃そのものとは別の刃の働きををする副切刃作
用、及び、切り子を払い出す除去作用を奏して、ブレー
ド14と被切断半導体装置10との間に発生する摩擦に
よる切削抵抗を低減し、ブレード14の切れ味が一層高
まり、バリやリード剥離の発生をより強く防止し、さら
に切断作業の生産性が向上する。
As shown in FIG. 5, the blade 14 is provided with a slit 15 on the circumferential surface, for example, inward, and when the individual semiconductor devices 10 are cut out from the semiconductor device row 11 by the blade 14 as described above, the slits are formed. Has a cooling action to prevent the temperature rise of the blade 14 by entwining the cooling water at the time of cutting, a sub-cutting blade action to act as a blade different from the blade itself of the blade 14, and a removing action to eject a facet. The cutting resistance due to friction generated between the blade 14 and the semiconductor device 10 to be cut is reduced, the sharpness of the blade 14 is further enhanced, the occurrence of burrs and lead peeling is more strongly prevented, and the productivity of cutting work is further improved. improves.

【0020】前記スリット15はこの実施例ではブレー
ド14の周面から軸心方向に向いて形成しているが、軸
心を外す向きに形成してもよい。また、スリット15の
個数は任意にでき、スリット15のブレード14周面か
らの深さ及び周面方向の長さは冷却水の一時保留、及び
切り子の払い出し機能を維持し、機械的強度を損なわな
い範囲であれば任意に設定できる。
Although the slit 15 is formed in the axial direction from the peripheral surface of the blade 14 in this embodiment, it may be formed in the direction away from the axial center. Further, the number of the slits 15 can be set arbitrarily, and the depth of the slits 15 from the peripheral surface of the blade 14 and the length in the peripheral surface direction temporarily retain the cooling water and maintain the function of discharging the facets, thereby impairing the mechanical strength. It can be set arbitrarily as long as there is no range.

【0021】ブレード14は種々の材質からなるものが
使用できるが、高強度で耐磨耗性のすぐれた電鋳ブレー
ドにすると切れ味がよく、且つ破損せず、切断速度をよ
り速めることができ半導体装置の切り出し装置として極
めてすぐれる。
The blade 14 can be made of various materials, but if it is an electroformed blade having high strength and excellent wear resistance, it has good sharpness and does not break, and the cutting speed can be further increased. It excels as a cutting device.

【0022】また、前記半導体装置10として樹脂封止
する前のリードフレーム1に対して、図6に示すように
切断線12予定箇所をハーフエッチング等で板厚みを薄
く16しておくと、ブレード14による切断速度がより
速められ、バリやリード剥離の発生がより防止される等
の効果を得ることができる。
Further, as shown in FIG. 6, if the lead frame 1 before resin-sealing as the semiconductor device 10 is cut to a predetermined cutting line 12 by a half etching or the like to reduce the plate thickness to 16, a blade is formed. It is possible to obtain an effect that the cutting speed by 14 is further increased and the occurrence of burrs and lead peeling is further prevented.

【0023】リードフレーム1の前記ハーフエッチング
等で板厚みを薄くする箇所は切断線12となる線を含ん
だ部分的領域、或いはリード3の全面的領域であっても
よい。
The portion of the lead frame 1 where the plate thickness is reduced by the half etching or the like may be a partial region including a line to be the cutting line 12 or the entire region of the lead 3.

【0024】前記実施例では半導体装置の切出し装置
は、リードフレーム1の片側のみを樹脂封止した半導体
装置列11からの個々の半導体装置10の切出しについ
て述べたが、リードフレーム1の両面側を樹脂封止した
半導体装置列からの切出しにも適用できる。
In the above-described embodiment, the semiconductor device cutting device has described the cutting of individual semiconductor devices 10 from the semiconductor device row 11 in which only one side of the lead frame 1 is resin-sealed. It can also be applied to cutting out from a resin-encapsulated semiconductor device array.

【0025】[0025]

【発明の効果】本発明の第1の発明によれば、半導体チ
ップを搭載したリードフレームの片面側を樹脂封止して
成る半導体装置を個々に分割する際、樹脂封止面をテー
ブルに置き、露呈しているリードフレーム側から、周面
にスリットの形成されたブレードによって、個々の半導
体装置を切出しているので、上記ブレードはリードフレ
ーム側から樹脂封止面側へ切断して行き、切断終了近く
でのリードフレームとの接触面積が小さくなり、もって
バリやリード剥離の発生が防止される。
According to the first aspect of the present invention, when a semiconductor device, in which one side of a lead frame on which a semiconductor chip is mounted is resin-sealed, is individually divided, the resin-sealed surface is placed on a table. Since the individual semiconductor devices are cut out from the exposed lead frame side by a blade having a slit formed in the peripheral surface, the blade is cut from the lead frame side to the resin sealing surface side, and cut. The contact area with the lead frame near the end is reduced, so that burrs and lead peeling are prevented.

【0026】また、本発明の第1の発明によれば、スリ
ットが外周に間隔をおいて形成されたブレードで、前記
リードフレーム側から切断し個々の半導体装置を切出し
ているので、スリットが切断時の冷却水を絡め取ること
によって、ブレードの温度上昇を防止する作用、ブレー
ドそのものとは別の刃の働きをする副切刃作用、および
切粉を払い出す除去作用を奏し、切断性が一層高まると
ともに、バリおよびリード剥離がより一層防止され、も
って切断作業の生産性がさらに向上する。
Further, according to the first aspect of the present invention, since the individual semiconductor devices are cut out by cutting from the lead frame side with a blade having slits formed at intervals on the outer circumference, the slits are cut. By entwining the cooling water at the time, the effect of preventing the temperature rise of the blade, the sub-cutting blade function that acts as a blade different from the blade itself, and the removal effect of discharging the cutting chips, further cutting performance is achieved. As the height increases, burrs and lead peeling are further prevented, thereby further improving the productivity of cutting work.

【0027】[0027]

【0028】本発明の第2の発明に係る半導体装置の切
出し装置によれば、半導体装置を切断するブレードは周
面に間隔をおいてスリットが形成されているため、切断
時の切削抵抗が減少し、且つ切断性が高まり、バリやリ
ード剥離が防止され、さらに切断装置が長寿命化する等
の効果がある。
According to the semiconductor device slicing device of the second aspect of the present invention, the blades for cutting the semiconductor device have slits formed on the circumferential surface thereof at intervals so that the cutting resistance at the time of cutting is reduced. In addition, the cutting property is improved, burrs and lead peeling are prevented, and the life of the cutting device is extended.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の1実施例において半導体装置の製造に
用いるリードフレームを示す図。
FIG. 1 is a diagram showing a lead frame used for manufacturing a semiconductor device according to an embodiment of the present invention.

【図2】本発明の1実施例において半導体装置の製造を
示す図。
FIG. 2 is a diagram showing manufacturing of a semiconductor device according to an embodiment of the present invention.

【図3】本発明の1実施例において半導体装置列からの
半導体装置の切出しを示す図。
FIG. 3 is a diagram showing cutting of a semiconductor device from a semiconductor device row in one embodiment of the present invention.

【図4】本発明の1実施例においてブレードによる切断
作用を説明するための図。
FIG. 4 is a view for explaining a cutting action by a blade in one embodiment of the present invention.

【図5】本発明の1実施例においてスリットを形成した
ブレードを示す図。
FIG. 5 is a diagram showing a blade having slits formed therein according to an embodiment of the present invention.

【図6】本発明の1実施例においてリードフレームの切
断線領域を薄厚みとした半導体装置を示す図。
FIG. 6 is a diagram showing a semiconductor device in which a cutting line region of a lead frame is made thin in one embodiment of the present invention.

【符号の説明】[Explanation of symbols]

1 リードフレーム 2 パッド 3 リード 4 サポートバー 5 縦枠 6 横枠 7 半導体チップ 8 ボンディングワイヤー 9 樹脂封止 10 半導体装置 11 半導体装置列 12 切断線 13 切断テーブル 14 回転切断装置(ブレード) 15 スリット 16 薄肉箇所 1 lead frame 2 pads 3 leads 4 Support bar 5 vertical frames 6 horizontal frames 7 semiconductor chips 8 bonding wire 9 Resin encapsulation 10 Semiconductor device 11 Semiconductor device array 12 cutting lines 13 cutting table 14 Rotary cutting device (blade) 15 slits 16 Thin wall

───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平4−321263(JP,A) 特開2000−183262(JP,A) 特開2000−286375(JP,A) 特開2001−244399(JP,A) (58)調査した分野(Int.Cl.7,DB名) H01L 23/50 ─────────────────────────────────────────────────── ─── Continuation of front page (56) References JP-A-4-321263 (JP, A) JP-A-2000-183262 (JP, A) JP-A-2000-286375 (JP, A) JP-A-2001-244399 (JP , A) (58) Fields investigated (Int.Cl. 7 , DB name) H01L 23/50

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 リードフレームを多列又は単列に連続的
に複数形成し、半導体チップを個々のリードフレームの
半導体チップ搭載箇所に搭載し、半導体チップとリード
を電気的に接続し、半導体チップを搭載したリードフレ
ームの片面側を樹脂封止して成る半導体装置を個々に分
割する方法において、 樹脂封止した側をテーブルに置き、封止樹脂より露呈し
ているリードフレーム側から周面にスリットが形成され
たブレードで切断し個々に分割することを特徴とする半
導体装置の切出し方法。
1. A plurality of lead frames are continuously formed in multiple rows or a single row, semiconductor chips are mounted on semiconductor chip mounting portions of individual lead frames, and the semiconductor chips and leads are electrically connected to each other. In a method of individually dividing a semiconductor device in which one side of a lead frame mounted with is sealed with resin, the resin-sealed side is placed on a table and the lead frame side exposed from the sealing resin is moved to the peripheral surface. A method of cutting a semiconductor device, which comprises cutting with a blade having a slit and dividing into individual pieces.
【請求項2】 リードフレームを多列又は単列に連続的
に複数形成し、半導体チップを個々のリードフレームの
半導体チップ搭載箇所に搭載し、半導体チップとリード
を電気的に接続し、樹脂封止して成る半導体装置を個々
に分割する装置において、 前記半導体装置を切断するブレードは周面に間隔をおい
てスリットが形成されていることを特徴とする半導体装
置の切出し装置。
2. A plurality of lead frames are continuously formed in multiple rows or a single row, the semiconductor chips are mounted on the semiconductor chip mounting portions of the individual lead frames, the semiconductor chips and the leads are electrically connected, and a resin seal is used. An apparatus for dividing a semiconductor device formed by stopping, wherein a blade for cutting the semiconductor device has slits formed at intervals on a peripheral surface thereof.
JP2000202680A 2000-07-04 2000-07-04 Method and apparatus for cutting out semiconductor device Expired - Fee Related JP3443799B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000202680A JP3443799B2 (en) 2000-07-04 2000-07-04 Method and apparatus for cutting out semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000202680A JP3443799B2 (en) 2000-07-04 2000-07-04 Method and apparatus for cutting out semiconductor device

Publications (2)

Publication Number Publication Date
JP2002026217A JP2002026217A (en) 2002-01-25
JP3443799B2 true JP3443799B2 (en) 2003-09-08

Family

ID=18700173

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000202680A Expired - Fee Related JP3443799B2 (en) 2000-07-04 2000-07-04 Method and apparatus for cutting out semiconductor device

Country Status (1)

Country Link
JP (1) JP3443799B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0303285D0 (en) * 2003-02-13 2003-03-19 Atlantic Technology Uk Ltd Electronic component packaging
JP4643464B2 (en) * 2006-02-13 2011-03-02 株式会社ディスコ Package substrate dividing method and dividing apparatus

Also Published As

Publication number Publication date
JP2002026217A (en) 2002-01-25

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