JP2002009219A - 樹脂封止型半導体装置 - Google Patents

樹脂封止型半導体装置

Info

Publication number
JP2002009219A
JP2002009219A JP2000188191A JP2000188191A JP2002009219A JP 2002009219 A JP2002009219 A JP 2002009219A JP 2000188191 A JP2000188191 A JP 2000188191A JP 2000188191 A JP2000188191 A JP 2000188191A JP 2002009219 A JP2002009219 A JP 2002009219A
Authority
JP
Japan
Prior art keywords
electrode terminal
resin
semiconductor device
semiconductor chip
source electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000188191A
Other languages
English (en)
Other versions
JP3450803B2 (ja
Inventor
Takeyuki Suzuki
木 健 之 鈴
Tatsuo Yoneda
田 辰 雄 米
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2000188191A priority Critical patent/JP3450803B2/ja
Publication of JP2002009219A publication Critical patent/JP2002009219A/ja
Application granted granted Critical
Publication of JP3450803B2 publication Critical patent/JP3450803B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

(57)【要約】 （修正有） 【課題】パワーＭＯＳ ＦＥＴ等において高周波動作に
おけるインピーダンスの増加を押さえると共に、ノイズ
の低減を図った小型の表面実装型半導体装置を提供す
る。 【解決手段】半導体チップ１２を搭載するフレーム基板
１３と、このフレーム基板に取り付ける半導体チップの
各電極と対応するドレイン電極端子３１、ソース電極端
子３３、ゲート電極端子３５と、チップのソース電極を
分離して形成したＧＮＤ電極と結ぶＧＮＤ電極端子３７
をゲート電極端子とソース電極端子の間に設け、ソー
ス、ゲート、ＧＮＤの各電極と電極端子間を低インピー
ダンスの金線３２，３４または金属板で接続する。また
フレーム基板の裏面がプリント基板の上面に直接に接す
るように樹脂封止を行う。

Description

【発明の詳細な説明】
【０００１】
【発明の属する技術分野】この発明は樹脂封止型半導体
装置に係り、特に、POWERMOSFET等の樹脂封止型半導体
装置に関する。
【０００２】
【従来の技術および発明が解決しようとする課題】POWE
RMOSFET等の樹脂封止型半導体装置１０は図５、図６に
示すようにプリント基板１１に取り付けられ、ノート型
パソコン、その他の電子機器のDC-DCコンバータ等に使
用するようになっている。
【０００３】この樹脂封止型半導体装置１０にはPOWERM
OSFET等の半導体チップ１２が備えられ、これを平板状
のフレーム基板１３に搭載するようになっている。この
フレーム基板１３の下側には図示するように半導体チッ
プ１２の複数のドレイン電極端子１４が並列に設けら
れ、入力電流を受けるようになっている。
【０００４】半導体チップ１２の上側には図示するよう
にCu等の複数のボンデングワイヤ１５を介してソース基
板１６が接続され、これに複数のソース電極端子１７を
複数のドレイン電極端子１４に対向して並列に設けこれ
から出力電流を出力するようになっている。
【０００５】半導体チップ１２の図示左側部にはゲート
ワイヤ用パッド１８が備えられ、これにCu等のボンデン
グワイヤ１９を接続するようになっている。このボンデ
ングワイヤ１９にはゲート電極端子２０が接続され、制
御電圧を受けるようになっている。
【０００６】これら半導体チップ１２、フレーム基板１
３の外周全面には一部のドレイン電極端子１４、ソース
電極端子１７、ゲート電極端子２０等とともに樹脂２１
が封止され、半導体チップ１２等を覆い小型・薄型の実
装外囲器（Small-Outline-Packeage「一般にSOP」と言
う）の樹脂封止型半導体装置１０を形成するようになっ
ている。
【０００７】この樹脂封止型半導体装置１０はプリント
基板１１の金属配線１１Aに接続するように取り付けら
れ、DC-DCコンバータ等に使用されるようになってい
る。
【０００８】このようにして製造した樹脂封止型半導体
装置１０の半導体チップ１２は一般に高入力インピーダ
ンスに形成され、ドライブ回路等の簡素化を図るように
している。
【０００９】この樹脂封止型半導体装置１０はゲート電
極端子２０の制御電圧によりON-OFFされ、ドレイン電極
端子１４からソース電極端子１７に流れる出力電流を制
御する。この出力電流効率は導体チップ１２のON時のロ
ス（定常ロス）とそのON-OFF時のロス（スイッチングロ
ス）とにより決まる。
【００１０】そのため、この樹脂封止型半導体装置１０
の特性を改善するには半導体チップ１２のON時の抵抗を
含むインピーダンスを小さくすることやスイッチングス
ピード、すなわち、動作周波数を向上するようにしてい
る。
【００１１】そこでこの種の樹脂封止型半導体装置１０
では下式で示す半導体チップ１２のON時のインピーダン
スを１／１０Ω〜１／１５Ω程度に小さくし動作周波数
を１００KHz〜３００KHz以上にしている。 １／Z＝１／r＋１／２πfL ただしZL＝２πfL ここでZは半導体チップ１２のインピーダンス、rは半導
体チップ１２の抵抗、Lはドレイン電極端子１４、ソー
ス電極端子１７、ボンデングワイヤ１５、１９等のイン
ダクタンス。
【００１２】しかし、最近の樹脂封止型半導体装置１０
では動作周波数が非常に高くななってきたのでインピー
ダンスの低減やスイッチングスピードの向上に限界が生
じるようになってきた。これは高周波動作におけるイン
ピーダンスの増加によるものとこれによる半導体チップ
の発熱が高くなるためであると考えられる。そのため、
このような樹脂封止型半導体装置１０ではゲート電極端
子２０からの制御電圧による影響を受け不要なノイズを
発生させると言う問題があった。また、このような樹脂
封止型半導体装置１０を単にプリント基板１１に取り付
けたものでは放熱が不十分となりこれを高温にさせてし
まうと言う問題があった。
【００１３】そこで本発明は動作周波数が向上してもイ
ンピーダンスが高くならないようにするとともにそのイ
ンピーダンスによる発熱を抑えるようにした樹脂封止型
半導体装置を提供することを目的とするものである。
【００１４】
【課題を解決するための手段】請求項１の発明は半導体
チップを搭載するフレーム基板と、このフレーム基板に
取り付ける半導体チップのドレイン電極端子、ソース電
極端子、ゲート電極端子と、前記フレーム基板に取り付
ける半導体チップのグランド端子と、これら半導体チッ
プ、フレーム基板、一部のドレイン電極端子、ソース電
極端子、ゲート電極端子およびグランド端子を封止する
樹脂と、この樹脂により封止した半導体チップ、フレー
ム基板、ドレイン電極端子、ソース電極端子、ゲート電
極端子およびグランド端子を取付けるプリント基板とを
備え、高周波動作運転時における半導体装置のノイズを
低減するようにしたものである。
【００１５】また、請求項２、３の発明はグランド端子
はソース電極端子を分離して形成あるいはグランド端子
はゲート電極端子とソース電極端子との間に形成するよ
うにしたからノイズの低減を容易に行うようにしたもの
である。
【００１６】さらに、請求項４、５、６の発明は半導体
チップとソース電極端子、ゲート電極端子およびグラン
ド端子とをAuの低インピーダンスのボンデングワイヤあ
るいは金属板により接続するようにしたから半導体装置
のインピーダンスを低減することができる。
【００１７】さらに、請求項７、８の発明はフレーム基
板の裏面がプリント基板の上面に直接に接するように樹
脂を封止あるいはフレーム基板、各電極端子の裏面がプ
リント基板の上面に直接に接するように樹脂を封止した
から半導体装置の放熱を高めることができる。
【００１８】
【発明の実施の形態】以下本発明樹脂封止型半導体装置
の第１の実施の形態を図１、図２を用いて説明する。こ
の本発明樹脂封止型半導体装置３０は基本的には従来の
樹脂封止型半導体装置１０とほぼ同様であるからこの樹
脂封止型半導体装置１０と同一部分は同一符号を付して
本発明樹脂封止型半導体装置３０を説明する。
【００１９】この樹脂封止型半導体装置３０には半導体
チップ１２が備えられ、その裏面にはPb-Sb系の半田を
用いて平板状のフレーム基板１３に固着するようになっ
ている。
【００２０】フレーム基板１３の下側部には直線的に延
びる複数のドレイン電極端子３１が並列に取り付けら
れ、これを半導体チップ１２の図示しないドレイン部に
接続するようになっている。
【００２１】半導体チップ１２のソース部に接続するの
上側部のフレーム基板１３にはAu等のインピーダンスが
小さい複数のボンデングワイヤ３２が接続され、これを
右部のソース基板１６に接続するようになっている。こ
のソース基板１６には直線的に延びる複数のソース電極
端子３３がドレイン電極端子３１に対向するように並列
に接続され、出力電流を出力するようになっている。
【００２２】半導体チップ１２にはゲートワイヤ用パッ
ド１８が備えられ、これにAu等のインピーダンスの小さ
いボンデングワイヤ３４を接続するようになっている。
このボンデングワイヤ３４には左部の直線的に延びるゲ
ート電極端子３５が接続され、半導体チップ１２に制御
電圧を加えるようになっている。
【００２３】半導体チップ１２にはAu等のインピーダン
スの小さいボンデングワイヤ３６が接続され、これをゲ
ート電極端子３５とソース電極端子３３bとの間にシャ
ーシ等の接地部に接続するグランド端子３７を設けるよ
うになっている。このグランド端子３７によりゲート電
極端子３５の制御電圧がドレイン電極端子３１とソース
電極端子３３とを流れる出力電流に影響しないようにな
り、半導体チップ１２にノイズを発生しないようにす
る。
【００２４】これら半導体チップ１２、フレーム基板１
３および一部のドレイン電極端子３１、ソース電極端子
３３、ゲート電極端子３５、グランド端子３７等にはフ
レーム基板１３等の裏面、ドレイン電極端子３１、ソー
ス電極端子３３、ゲート電極端子３５、グランド端子３
７の裏面を覆わないように、すなわち、露出するように
樹脂３８が被覆され、半導体チップ１２等の封止すると
ともにこれらを小型・薄型の実装外囲器（Small-Outlin
e-Packeageと言う）を構成した樹脂封止型半導体装置３
０を形成するようになっている。
【００２５】この樹脂封止型半導体装置３０はプリント
基板１１の金属配線１１Aの上面に直接に接続して取り
付けられ、半導体チップ１２等の熱をフレーム基板１
３、ドレイン電極端子３１、ソース電極端子３３、ゲー
ト電極端子３５からプリント基板１１を介し外部に放熱
する。
【００２６】また、この樹脂封止型半導体装置３０はソ
ース電極端子３３とゲート電極端子３５との間にグラン
ド端子３７を取り付けたからゲート電極端子３５からの
制御電圧をドレイ電極端子３１とソース電極端子３３の
間を流れる出力電流に悪影響を与えなくなり半導体チッ
プ１２に生じるノイズが小さくする。そのため、この樹
脂封止型半導体装置３０の特性を改善することができ
る。
【００２７】つぎに、図３、図４を用いて本発明樹脂封
止型半導体装置４０の第２の実施の形態を説明する。こ
の第２の実施の樹脂封止型半導体装置４０は第１の実施
の形態の樹脂封止型半導体装置３０とほぼ同様であるか
ら本発明樹脂封止型半導体装置３０と同一部分は同一符
号を付して第２の実施の形態の樹脂封止型半導体装置４
０を説明する。
【００２８】この半導体装置４０にはボンデングワイヤ
３２の代わりに半導体チップ１２とソース基板１６との
間にはCu等の金属板４１が取り付けられ、半導体チップ
１２とソース基板１６との間のインピーダンスを小さく
するようになっている。
【００２９】このように形成した半導体装置４０はソー
ス電極端子３３とドレイン電極端子３１との間に金属板
４１を取り付けたからソース電極端子３３とドレイン電
極端子３１との間のインピーダンスが低くなり半導体チ
ップ１２の温度を下げその特性を改善することができ
る。
【００３０】そのうえ、フレームベッド１３を含む半導
体装置４０の裏面を直接にプリント基板１１の金属配線
１１Aに取り付けたから半導体装置４０の熱がプリント
基板１１の金属配線１１aを介して外部に放出しこれを
高温にすることがない。そのため、この種の半導体装置
４０を長期に亘り安定して使用することができる。
【００３１】本発明ではソース電極端子３３とゲート電
極端子３５との間にグランド端子３７を設けたがソース
支持板１６の左端部を切断しソース電極１７の一部を分
離しこれをグランド端子としてもよい。
【００３２】
【発明の効果】本発明は半導体チップを搭載するフレー
ム基板と、このフレーム基板に取り付ける半導体チップ
のドレイン電極端子、ソース電極端子、ゲート電極端子
と、前記フレーム基板に取り付ける半導体チップのグラ
ンド端子と、これら半導体チップ、フレーム基板、一部
のドレイン電極端子、ソース電極端子、ゲート電極端子
およびグランド端子を封止する樹脂と、この樹脂により
封止した半導体チップ、フレーム基板、ドレイン電極端
子、ソース電極端子、ゲート電極端子およびグランド端
子を取付けるプリント基板とを備えたから高周波動作運
転時における半導体装置のノイズを低減することができ
る。
【００３３】また、本発明はグランド端子はソース電極
端子を分離して形成あるいはグランド端子はゲート電極
端子とソース電極端子との間に形成するようにしたから
ノイズを容易に低減することができる。
【００３４】さらに、本発明は半導体チップとソース電
極端子、ゲート電極端子およびグランド端子とをAuの低
インピーダンスのボンデングワイヤあるいは金属板によ
り接続するようにしたから半導体装置のインピーダンス
を低減することができる。
【００３５】さらに、本発明はフレーム基板の裏面がプ
リント基板の上面に直接に接するように樹脂を封止ある
いはフレーム基板、各電極端子の裏面がプリント基板の
上面に直接に接するように樹脂を封止したから半導体装
置の放熱を高めることができる。
【図面の簡単な説明】
【図１】本発明樹脂封止型半導体装置の概要を示す平面
図。
【図２】図１の右側面図。
【図３】本発明樹脂封止型半導体装置の他の概要を示す
平面図。
【図４】図３の右側面図。
【図５】従来の樹脂封止型半導体装置の概要を示す平面
図。
【図６】図５の右側面図。
【符号の説明】
１０、３０、４０ 樹脂封止型半導体装置 １１ プリント基板 １２ 半導体チップ １３ フレーム基板 １４、３１ ドレイン電極端子 １５、１９、３２、３４ ボンデングワイヤ １７、３３ ソース電極端子 ２０、３５ ゲート電極端子 ２０、３８ 樹脂 ３７ グランド端子 ４１ 金属板

Claims (8)

    【特許請求の範囲】
  1. 【請求項１】半導体チップを搭載するフレーム基板と、 このフレーム基板に取り付ける半導体チップのドレイン
    電極端子、ソース電極端子、ゲート電極端子と、 前記フレーム基板に取り付ける半導体チップのグランド
    端子と、 これら半導体チップ、フレーム基板、一部のドレイン電
    極端子、ソース電極端子、ゲート電極端子およびグラン
    ド端子を封止する樹脂と、 この樹脂により封止した半導体チップ、フレーム基板、
    ドレイン電極端子、ソース電極端子、ゲート電極端子お
    よびグランド端子を取付けるプリント基板と、 を備えたことを特徴とする樹脂封止型半導体装置。
  2. 【請求項２】グランド端子はソース電極端子を分離して
    形成するものであることを特徴とする請求項１記載の樹
    脂封止型半導体装置。
  3. 【請求項３】グランド端子はゲート電極端子とソース電
    極端子との間に形成するものであることを特徴とする請
    求項１または２記載の樹脂封止型半導体装置。
  4. 【請求項４】半導体チップとソース電極端子、ゲート電
    極端子およびグランド端子とをAuの低インピーダンスの
    ボンデングワイヤにより接続したことをを特徴とする請
    求項１記載の樹脂封止型半導体装置。
  5. 【請求項５】半導体チップと少なくともソース電極端子
    とを金属板により接続するようにしたことを特徴とする
    請求項１記載の樹脂封止型半導体装置。
  6. 【請求項６】金属板は銅板であることを特徴とする請求
    項４記載の樹脂封止型半導体装置。
  7. 【請求項７】フレーム基板の裏面がプリント基板の上面
    に直接に接するように樹脂を封止したことを特徴とする
    請求項１、２、３、４、５または６記載の樹脂封止型半
    導体装置。
  8. 【請求項８】フレーム基板、各電極端子の裏面がプリン
    ト基板の上面に直接に接するように樹脂を封止したこと
    を特徴とする請求項１、２、３、４、５、６または７記
    載の樹脂封止型半導体装置。
JP2000188191A 2000-06-22 2000-06-22 樹脂封止型半導体装置 Expired - Fee Related JP3450803B2 (ja)

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Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004342735A (ja) * 2003-05-14 2004-12-02 Renesas Technology Corp 半導体装置および電源システム
JP2005129606A (ja) * 2003-10-22 2005-05-19 Mitsubishi Electric Corp 電力用半導体装置
JP2006119961A (ja) * 2004-10-22 2006-05-11 Sony Corp メモリカード
JP2008104348A (ja) * 2007-11-05 2008-05-01 Renesas Technology Corp 半導体装置および電源システム
JP2009302261A (ja) * 2008-06-12 2009-12-24 Toyota Central R&D Labs Inc 半導体装置
JP2011077550A (ja) * 2010-12-28 2011-04-14 Renesas Electronics Corp 半導体装置
JP2013141035A (ja) * 2013-04-19 2013-07-18 Renesas Electronics Corp 半導体装置
JP2014099535A (ja) * 2012-11-15 2014-05-29 Sanken Electric Co Ltd 半導体装置
JP2019075726A (ja) * 2017-10-18 2019-05-16 株式会社オートネットワーク技術研究所 車載用の半導体スイッチ装置及び車載用電源装置
JP2020170736A (ja) * 2019-04-01 2020-10-15 富士電機株式会社 半導体装置
WO2023157604A1 (ja) * 2022-02-15 2023-08-24 ローム株式会社 半導体装置および半導体装置の実装構造体

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7109577B2 (en) 2003-05-14 2006-09-19 Renesas Technology Corp. Semiconductor device and power supply system
JP2004342735A (ja) * 2003-05-14 2004-12-02 Renesas Technology Corp 半導体装置および電源システム
JP2005129606A (ja) * 2003-10-22 2005-05-19 Mitsubishi Electric Corp 電力用半導体装置
JP4515218B2 (ja) * 2004-10-22 2010-07-28 ソニー株式会社 メモリカード
JP2006119961A (ja) * 2004-10-22 2006-05-11 Sony Corp メモリカード
JP2008104348A (ja) * 2007-11-05 2008-05-01 Renesas Technology Corp 半導体装置および電源システム
JP2009302261A (ja) * 2008-06-12 2009-12-24 Toyota Central R&D Labs Inc 半導体装置
JP2011077550A (ja) * 2010-12-28 2011-04-14 Renesas Electronics Corp 半導体装置
JP2014099535A (ja) * 2012-11-15 2014-05-29 Sanken Electric Co Ltd 半導体装置
JP2013141035A (ja) * 2013-04-19 2013-07-18 Renesas Electronics Corp 半導体装置
JP2019075726A (ja) * 2017-10-18 2019-05-16 株式会社オートネットワーク技術研究所 車載用の半導体スイッチ装置及び車載用電源装置
JP2020170736A (ja) * 2019-04-01 2020-10-15 富士電機株式会社 半導体装置
JP7338204B2 (ja) 2019-04-01 2023-09-05 富士電機株式会社 半導体装置
WO2023157604A1 (ja) * 2022-02-15 2023-08-24 ローム株式会社 半導体装置および半導体装置の実装構造体

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