JP2001527296A5 - - Google Patents

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Publication number
JP2001527296A5
JP2001527296A5 JP2000525932A JP2000525932A JP2001527296A5 JP 2001527296 A5 JP2001527296 A5 JP 2001527296A5 JP 2000525932 A JP2000525932 A JP 2000525932A JP 2000525932 A JP2000525932 A JP 2000525932A JP 2001527296 A5 JP2001527296 A5 JP 2001527296A5
Authority
JP
Japan
Prior art keywords
region
induction transistor
doping concentration
transistor structure
semiconductor body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000525932A
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English (en)
Japanese (ja)
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JP2001527296A (ja
Filing date
Publication date
Priority claimed from US08/995,080 external-priority patent/US5945701A/en
Application filed filed Critical
Publication of JP2001527296A publication Critical patent/JP2001527296A/ja
Publication of JP2001527296A5 publication Critical patent/JP2001527296A5/ja
Pending legal-status Critical Current

Links

JP2000525932A 1997-12-19 1998-12-16 改良型静電誘導トランジスタ Pending JP2001527296A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/995,080 1997-12-19
US08/995,080 US5945701A (en) 1997-12-19 1997-12-19 Static induction transistor
PCT/US1998/026755 WO1999033118A1 (en) 1997-12-19 1998-12-16 Improved static induction transistor

Publications (2)

Publication Number Publication Date
JP2001527296A JP2001527296A (ja) 2001-12-25
JP2001527296A5 true JP2001527296A5 (enExample) 2006-01-05

Family

ID=25541367

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000525932A Pending JP2001527296A (ja) 1997-12-19 1998-12-16 改良型静電誘導トランジスタ

Country Status (4)

Country Link
US (1) US5945701A (enExample)
EP (1) EP1040524A1 (enExample)
JP (1) JP2001527296A (enExample)
WO (1) WO1999033118A1 (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19843659A1 (de) * 1998-09-23 2000-04-06 Siemens Ag Halbleiterbauelement mit strukturiertem Halbleiterkörper
US6870189B1 (en) * 1999-12-24 2005-03-22 Sumitomo Electric Industries, Ltd. Pinch-off type vertical junction field effect transistor and method of manufacturing the same
JP4875660B2 (ja) * 2002-04-30 2012-02-15 古河電気工業株式会社 Ｉｉｉ−ｖ族窒化物半導体装置
JP2004134547A (ja) * 2002-10-10 2004-04-30 Hitachi Ltd 半導体装置
US6974720B2 (en) * 2003-10-16 2005-12-13 Cree, Inc. Methods of forming power semiconductor devices using boule-grown silicon carbide drift layers and power semiconductor devices formed thereby
JP4696444B2 (ja) * 2003-11-14 2011-06-08 株式会社デンソー 炭化珪素半導体装置及びその製造方法
US7187021B2 (en) * 2003-12-10 2007-03-06 General Electric Company Static induction transistor
US7402863B2 (en) * 2004-06-21 2008-07-22 International Rectifier Corporation Trench FET with reduced mesa width and source contact inside active trench
US7820511B2 (en) 2004-07-08 2010-10-26 Semisouth Laboratories, Inc. Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of making
US7202528B2 (en) * 2004-12-01 2007-04-10 Semisouth Laboratories, Inc. Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of making
US7098093B2 (en) * 2004-09-13 2006-08-29 Northrop Grumman Corporation HEMT device and method of making
US7119380B2 (en) * 2004-12-01 2006-10-10 Semisouth Laboratories, Inc. Lateral trench field-effect transistors in wide bandgap semiconductor materials, methods of making, and integrated circuits incorporating the transistors
US20060260956A1 (en) * 2005-05-23 2006-11-23 Bausch & Lomb Incorporated Methods for preventing or reducing interaction between packaging materials and polymeric articles contained therein
US7719080B2 (en) * 2005-06-20 2010-05-18 Teledyne Scientific & Imaging, Llc Semiconductor device with a conduction enhancement layer
GB0623252D0 (en) * 2006-11-22 2007-01-03 Filtronic Compound Semiconduct A multigate schottky diode
US7982239B2 (en) * 2007-06-13 2011-07-19 Northrop Grumman Corporation Power switching transistors
US7977713B2 (en) * 2008-05-08 2011-07-12 Semisouth Laboratories, Inc. Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making
US7994548B2 (en) * 2008-05-08 2011-08-09 Semisouth Laboratories, Inc. Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making
JP5324157B2 (ja) 2008-08-04 2013-10-23 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
WO2011025973A1 (en) * 2009-08-28 2011-03-03 Microsemi Corporation Silicon carbide dual-mesa static induction transistor
WO2011149768A2 (en) 2010-05-25 2011-12-01 Ss Sc Ip, Llc Self-aligned semiconductor devices with reduced gate-source leakage under reverse bias and methods of making
US8519410B1 (en) 2010-12-20 2013-08-27 Microsemi Corporation Silicon carbide vertical-sidewall dual-mesa static induction transistor
CN110828551A (zh) * 2014-07-22 2020-02-21 株式会社Flosfia 结晶性半导体膜和板状体以及半导体装置
US9293465B1 (en) 2014-09-11 2016-03-22 Northrop Grumman Systems Corporation Monolithic bi-directional current conducting device and method of making the same
JP6787367B2 (ja) 2017-07-26 2020-11-18 株式会社デンソー 半導体装置
JP7179276B2 (ja) * 2017-09-29 2022-11-29 株式会社タムラ製作所 電界効果トランジスタ
JP6950714B2 (ja) 2019-01-21 2021-10-13 株式会社デンソー 半導体装置
JP7382559B2 (ja) * 2019-12-25 2023-11-17 株式会社ノベルクリスタルテクノロジー トレンチ型ｍｅｓｆｅｔ

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3977017A (en) * 1973-04-25 1976-08-24 Sony Corporation Multi-channel junction gated field effect transistor and method of making same
US4326209A (en) * 1977-04-13 1982-04-20 Nippon Gakki Seizo Kabushiki Kaisha Static induction transistor
US4364072A (en) * 1978-03-17 1982-12-14 Zaidan Hojin Handotai Kenkyu Shinkokai Static induction type semiconductor device with multiple doped layers for potential modification
US4587712A (en) * 1981-11-23 1986-05-13 General Electric Company Method for making vertical channel field controlled device employing a recessed gate structure
JPS58169974A (ja) * 1983-03-12 1983-10-06 Semiconductor Res Found 半導体装置
US4551909A (en) * 1984-03-29 1985-11-12 Gte Laboratories Incorporated Method of fabricating junction field effect transistors
JPS61121369A (ja) * 1984-11-19 1986-06-09 Fujitsu Ltd 半導体装置
US5418376A (en) * 1993-03-02 1995-05-23 Toyo Denki Seizo Kabushiki Kaisha Static induction semiconductor device with a distributed main electrode structure and static induction semiconductor device with a static induction main electrode shorted structure
US5612547A (en) * 1993-10-18 1997-03-18 Northrop Grumman Corporation Silicon carbide static induction transistor
JPH0855978A (ja) * 1994-06-09 1996-02-27 Ngk Insulators Ltd 半導体装置およびその製造方法

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