JP2001527296A - 改良型静電誘導トランジスタ - Google Patents
改良型静電誘導トランジスタInfo
- Publication number
- JP2001527296A JP2001527296A JP2000525932A JP2000525932A JP2001527296A JP 2001527296 A JP2001527296 A JP 2001527296A JP 2000525932 A JP2000525932 A JP 2000525932A JP 2000525932 A JP2000525932 A JP 2000525932A JP 2001527296 A JP2001527296 A JP 2001527296A
- Authority
- JP
- Japan
- Prior art keywords
- region
- induction transistor
- doping concentration
- source
- static induction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000006698 induction Effects 0.000 title claims abstract description 45
- 230000003068 static effect Effects 0.000 title claims description 39
- 239000004065 semiconductor Substances 0.000 claims description 25
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 12
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 12
- 239000000969 carrier Substances 0.000 claims description 10
- 239000002019 doping agent Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910002601 GaN Inorganic materials 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 108091006146 Channels Proteins 0.000 description 16
- 239000008186 active pharmaceutical agent Substances 0.000 description 13
- 230000000903 blocking effect Effects 0.000 description 12
- 239000000758 substrate Substances 0.000 description 9
- 230000015556 catabolic process Effects 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 230000005684 electric field Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000009977 dual effect Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- 101100321669 Fagopyrum esculentum FA02 gene Proteins 0.000 description 1
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 1
- 101100491263 Oryza sativa subsp. japonica AP2-4 gene Proteins 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005421 electrostatic potential Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/202—FETs having static field-induced regions, e.g. static-induction transistors [SIT] or permeable base transistors [PBT]
Landscapes
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/995,080 | 1997-12-19 | ||
| US08/995,080 US5945701A (en) | 1997-12-19 | 1997-12-19 | Static induction transistor |
| PCT/US1998/026755 WO1999033118A1 (en) | 1997-12-19 | 1998-12-16 | Improved static induction transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001527296A true JP2001527296A (ja) | 2001-12-25 |
| JP2001527296A5 JP2001527296A5 (enExample) | 2006-01-05 |
Family
ID=25541367
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000525932A Pending JP2001527296A (ja) | 1997-12-19 | 1998-12-16 | 改良型静電誘導トランジスタ |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US5945701A (enExample) |
| EP (1) | EP1040524A1 (enExample) |
| JP (1) | JP2001527296A (enExample) |
| WO (1) | WO1999033118A1 (enExample) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005150353A (ja) * | 2003-11-14 | 2005-06-09 | Denso Corp | 炭化珪素半導体装置及びその製造方法 |
| JP2007535800A (ja) * | 2003-10-16 | 2007-12-06 | クリー インコーポレイテッド | ブール成長された炭化ケイ素ドリフト層を使用してパワー半導体デバイスを形成する方法、およびそれによって形成されるパワー半導体デバイス |
| US7772613B2 (en) | 2008-08-04 | 2010-08-10 | Renesas Technology Corp. | Semiconductor device with large blocking voltage and method of manufacturing the same |
| WO2019065751A1 (ja) * | 2017-09-29 | 2019-04-04 | 株式会社タムラ製作所 | 電界効果トランジスタ |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19843659A1 (de) * | 1998-09-23 | 2000-04-06 | Siemens Ag | Halbleiterbauelement mit strukturiertem Halbleiterkörper |
| US6870189B1 (en) * | 1999-12-24 | 2005-03-22 | Sumitomo Electric Industries, Ltd. | Pinch-off type vertical junction field effect transistor and method of manufacturing the same |
| JP4875660B2 (ja) * | 2002-04-30 | 2012-02-15 | 古河電気工業株式会社 | Ｉｉｉ−ｖ族窒化物半導体装置 |
| JP2004134547A (ja) * | 2002-10-10 | 2004-04-30 | Hitachi Ltd | 半導体装置 |
| US7187021B2 (en) * | 2003-12-10 | 2007-03-06 | General Electric Company | Static induction transistor |
| US7402863B2 (en) * | 2004-06-21 | 2008-07-22 | International Rectifier Corporation | Trench FET with reduced mesa width and source contact inside active trench |
| US7820511B2 (en) | 2004-07-08 | 2010-10-26 | Semisouth Laboratories, Inc. | Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of making |
| US7202528B2 (en) * | 2004-12-01 | 2007-04-10 | Semisouth Laboratories, Inc. | Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of making |
| US7098093B2 (en) * | 2004-09-13 | 2006-08-29 | Northrop Grumman Corporation | HEMT device and method of making |
| US7119380B2 (en) * | 2004-12-01 | 2006-10-10 | Semisouth Laboratories, Inc. | Lateral trench field-effect transistors in wide bandgap semiconductor materials, methods of making, and integrated circuits incorporating the transistors |
| US20060260956A1 (en) * | 2005-05-23 | 2006-11-23 | Bausch & Lomb Incorporated | Methods for preventing or reducing interaction between packaging materials and polymeric articles contained therein |
| US7719080B2 (en) * | 2005-06-20 | 2010-05-18 | Teledyne Scientific & Imaging, Llc | Semiconductor device with a conduction enhancement layer |
| GB0623252D0 (en) * | 2006-11-22 | 2007-01-03 | Filtronic Compound Semiconduct | A multigate schottky diode |
| US7982239B2 (en) * | 2007-06-13 | 2011-07-19 | Northrop Grumman Corporation | Power switching transistors |
| US7977713B2 (en) * | 2008-05-08 | 2011-07-12 | Semisouth Laboratories, Inc. | Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making |
| US7994548B2 (en) * | 2008-05-08 | 2011-08-09 | Semisouth Laboratories, Inc. | Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making |
| WO2011025973A1 (en) * | 2009-08-28 | 2011-03-03 | Microsemi Corporation | Silicon carbide dual-mesa static induction transistor |
| WO2011149768A2 (en) | 2010-05-25 | 2011-12-01 | Ss Sc Ip, Llc | Self-aligned semiconductor devices with reduced gate-source leakage under reverse bias and methods of making |
| US8519410B1 (en) | 2010-12-20 | 2013-08-27 | Microsemi Corporation | Silicon carbide vertical-sidewall dual-mesa static induction transistor |
| CN110828551A (zh) * | 2014-07-22 | 2020-02-21 | 株式会社Flosfia | 结晶性半导体膜和板状体以及半导体装置 |
| US9293465B1 (en) | 2014-09-11 | 2016-03-22 | Northrop Grumman Systems Corporation | Monolithic bi-directional current conducting device and method of making the same |
| JP6787367B2 (ja) | 2017-07-26 | 2020-11-18 | 株式会社デンソー | 半導体装置 |
| JP6950714B2 (ja) | 2019-01-21 | 2021-10-13 | 株式会社デンソー | 半導体装置 |
| JP7382559B2 (ja) * | 2019-12-25 | 2023-11-17 | 株式会社ノベルクリスタルテクノロジー | トレンチ型ｍｅｓｆｅｔ |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3977017A (en) * | 1973-04-25 | 1976-08-24 | Sony Corporation | Multi-channel junction gated field effect transistor and method of making same |
| US4326209A (en) * | 1977-04-13 | 1982-04-20 | Nippon Gakki Seizo Kabushiki Kaisha | Static induction transistor |
| US4364072A (en) * | 1978-03-17 | 1982-12-14 | Zaidan Hojin Handotai Kenkyu Shinkokai | Static induction type semiconductor device with multiple doped layers for potential modification |
| US4587712A (en) * | 1981-11-23 | 1986-05-13 | General Electric Company | Method for making vertical channel field controlled device employing a recessed gate structure |
| JPS58169974A (ja) * | 1983-03-12 | 1983-10-06 | Semiconductor Res Found | 半導体装置 |
| US4551909A (en) * | 1984-03-29 | 1985-11-12 | Gte Laboratories Incorporated | Method of fabricating junction field effect transistors |
| JPS61121369A (ja) * | 1984-11-19 | 1986-06-09 | Fujitsu Ltd | 半導体装置 |
| US5418376A (en) * | 1993-03-02 | 1995-05-23 | Toyo Denki Seizo Kabushiki Kaisha | Static induction semiconductor device with a distributed main electrode structure and static induction semiconductor device with a static induction main electrode shorted structure |
| US5612547A (en) * | 1993-10-18 | 1997-03-18 | Northrop Grumman Corporation | Silicon carbide static induction transistor |
| JPH0855978A (ja) * | 1994-06-09 | 1996-02-27 | Ngk Insulators Ltd | 半導体装置およびその製造方法 |
-
1997
- 1997-12-19 US US08/995,080 patent/US5945701A/en not_active Expired - Lifetime
-
1998
- 1998-12-16 WO PCT/US1998/026755 patent/WO1999033118A1/en not_active Ceased
- 1998-12-16 JP JP2000525932A patent/JP2001527296A/ja active Pending
- 1998-12-16 EP EP98963988A patent/EP1040524A1/en not_active Ceased
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007535800A (ja) * | 2003-10-16 | 2007-12-06 | クリー インコーポレイテッド | ブール成長された炭化ケイ素ドリフト層を使用してパワー半導体デバイスを形成する方法、およびそれによって形成されるパワー半導体デバイス |
| JP2005150353A (ja) * | 2003-11-14 | 2005-06-09 | Denso Corp | 炭化珪素半導体装置及びその製造方法 |
| US7772613B2 (en) | 2008-08-04 | 2010-08-10 | Renesas Technology Corp. | Semiconductor device with large blocking voltage and method of manufacturing the same |
| WO2019065751A1 (ja) * | 2017-09-29 | 2019-04-04 | 株式会社タムラ製作所 | 電界効果トランジスタ |
| JP2019067915A (ja) * | 2017-09-29 | 2019-04-25 | 株式会社タムラ製作所 | 電界効果トランジスタ |
| JP7179276B2 (ja) | 2017-09-29 | 2022-11-29 | 株式会社タムラ製作所 | 電界効果トランジスタ |
| US11616138B2 (en) | 2017-09-29 | 2023-03-28 | Tamura Corporation | Field effect transistor |
| US12087856B2 (en) | 2017-09-29 | 2024-09-10 | Tamura Corporation | Field effect transistor |
Also Published As
| Publication number | Publication date |
|---|---|
| WO1999033118A1 (en) | 1999-07-01 |
| US5945701A (en) | 1999-08-31 |
| EP1040524A1 (en) | 2000-10-04 |
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Legal Events
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