JP2001516150A - 切り換え可能な感光性を有する有機ダイオード - Google Patents
切り換え可能な感光性を有する有機ダイオードInfo
- Publication number
- JP2001516150A JP2001516150A JP2000510172A JP2000510172A JP2001516150A JP 2001516150 A JP2001516150 A JP 2001516150A JP 2000510172 A JP2000510172 A JP 2000510172A JP 2000510172 A JP2000510172 A JP 2000510172A JP 2001516150 A JP2001516150 A JP 2001516150A
- Authority
- JP
- Japan
- Prior art keywords
- photodiode
- organic
- derivatives
- array
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/50—Bistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
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- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/451—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a metal-semiconductor-metal [m-s-m] structure
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- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/30—Devices controlled by radiation
- H10K39/32—Organic image sensors
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- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
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- H10K85/114—Poly-phenylenevinylene; Derivatives thereof
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- H10K85/115—Polyfluorene; Derivatives thereof
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- H10K85/10—Organic polymers or oligomers
- H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
- H10K85/143—Polyacetylene; Derivatives thereof
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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- H10K85/10—Organic polymers or oligomers
- H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
- H10K85/146—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE poly N-vinylcarbazol; Derivatives thereof
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- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/211—Fullerenes, e.g. C60
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- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
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Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US5584097P | 1997-08-15 | 1997-08-15 | |
| US60/055,840 | 1997-08-15 | ||
| PCT/US1998/016935 WO1999009603A1 (en) | 1997-08-15 | 1998-08-14 | Organic diodes with switchable photosensitivity |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001516150A true JP2001516150A (ja) | 2001-09-25 |
Family
ID=22000495
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000510172A Withdrawn JP2001516150A (ja) | 1997-08-15 | 1998-08-14 | 切り換え可能な感光性を有する有機ダイオード |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP1027741A4 (de) |
| JP (1) | JP2001516150A (de) |
| CN (1) | CN1143400C (de) |
| AU (1) | AU8783998A (de) |
| HK (1) | HK1030482A1 (de) |
| WO (1) | WO1999009603A1 (de) |
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| JP2005523588A (ja) * | 2002-04-16 | 2005-08-04 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 高性能で低価格のプラスチック太陽電池 |
| WO2005091381A1 (en) * | 2004-03-22 | 2005-09-29 | Fuji Photo Film Co., Ltd. | Photodetector |
| JP2007258235A (ja) * | 2006-03-20 | 2007-10-04 | Matsushita Electric Works Ltd | 有機薄膜太陽電池 |
| WO2008044749A1 (en) * | 2006-10-04 | 2008-04-17 | Sharp Kabushiki Kaisha | Photosensor and ambient light sensor |
| JP2008512691A (ja) * | 2004-09-08 | 2008-04-24 | ナノイデント・テヒノロギース・アクチエンゲゼルシヤフト | 生化学試料を評価する装置 |
| KR101328569B1 (ko) | 2012-01-10 | 2013-11-13 | 한국과학기술원 | 핫전자 기반의 나노다이오드 센서 및 그 제조방법 |
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Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5504323A (en) * | 1993-12-07 | 1996-04-02 | The Regents Of The University Of California | Dual function conducting polymer diodes |
-
1998
- 1998-08-14 JP JP2000510172A patent/JP2001516150A/ja not_active Withdrawn
- 1998-08-14 CN CNB988091038A patent/CN1143400C/zh not_active Expired - Fee Related
- 1998-08-14 AU AU87839/98A patent/AU8783998A/en not_active Abandoned
- 1998-08-14 EP EP98939408A patent/EP1027741A4/de not_active Withdrawn
- 1998-08-14 WO PCT/US1998/016935 patent/WO1999009603A1/en not_active Application Discontinuation
-
2001
- 2001-02-23 HK HK01101312A patent/HK1030482A1/xx not_active IP Right Cessation
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| JPWO2018124055A1 (ja) * | 2016-12-27 | 2019-07-25 | パナソニックＩｐマネジメント株式会社 | 撮像装置、カメラ、及び撮像方法 |
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Also Published As
| Publication number | Publication date |
|---|---|
| WO1999009603A1 (en) | 1999-02-25 |
| CN1143400C (zh) | 2004-03-24 |
| EP1027741A1 (de) | 2000-08-16 |
| AU8783998A (en) | 1999-03-08 |
| HK1030482A1 (en) | 2001-05-04 |
| WO1999009603A9 (en) | 1999-05-14 |
| EP1027741A4 (de) | 2005-10-12 |
| CN1270706A (zh) | 2000-10-18 |
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