JP2001502849A - 電界制御型の遮断可能なパワー半導体スイッチの大面積大電流モジュール - Google Patents

電界制御型の遮断可能なパワー半導体スイッチの大面積大電流モジュール

Info

Publication number
JP2001502849A
JP2001502849A JP51988098A JP51988098A JP2001502849A JP 2001502849 A JP2001502849 A JP 2001502849A JP 51988098 A JP51988098 A JP 51988098A JP 51988098 A JP51988098 A JP 51988098A JP 2001502849 A JP2001502849 A JP 2001502849A
Authority
JP
Japan
Prior art keywords
area
low
voltage power
current module
contact plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP51988098A
Other languages
English (en)
Japanese (ja)
Inventor
オステン、イエンス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of JP2001502849A publication Critical patent/JP2001502849A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01066—Dysprosium [Dy]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01067—Holmium [Ho]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01068—Erbium [Er]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15158—Shape the die mounting substrate being other than a cuboid
    • H01L2924/15162—Top view

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Power Conversion In General (AREA)
JP51988098A 1996-10-31 1997-10-20 電界制御型の遮断可能なパワー半導体スイッチの大面積大電流モジュール Pending JP2001502849A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE1996144009 DE19644009A1 (de) 1996-10-31 1996-10-31 Großflächiges Hochstrommodul eines feldgesteuerten, abschaltbaren Leistungs-Halbleiterschalters
DE19644009.2 1996-10-31
PCT/DE1997/002418 WO1998019340A1 (de) 1996-10-31 1997-10-20 Grossflächiges hochstrommodul eines feldgesteuerten, abschaltbaren leistungs-halbleiterschalters

Publications (1)

Publication Number Publication Date
JP2001502849A true JP2001502849A (ja) 2001-02-27

Family

ID=7809732

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51988098A Pending JP2001502849A (ja) 1996-10-31 1997-10-20 電界制御型の遮断可能なパワー半導体スイッチの大面積大電流モジュール

Country Status (5)

Country Link
EP (1) EP0938750A1 (de)
JP (1) JP2001502849A (de)
KR (1) KR20000052973A (de)
DE (1) DE19644009A1 (de)
WO (1) WO1998019340A1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105074920A (zh) * 2013-04-09 2015-11-18 Abb技术有限公司 功率半导体模块

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10048436A1 (de) * 2000-09-29 2002-04-18 Siemens Ag Elektronische Leistungsschaltervorrichtung
DE10200372A1 (de) * 2002-01-08 2003-07-24 Siemens Ag Leistungshalbleitermodul
WO2003065454A2 (en) * 2002-01-29 2003-08-07 Advanced Power Technology, Inc. Split-gate power module and method for suppressing oscillation therein

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5710958A (en) * 1980-06-25 1982-01-20 Shindengen Electric Mfg Co Ltd Semiconductor device
EP0064383A3 (de) * 1981-05-06 1984-06-27 LUCAS INDUSTRIES public limited company Ein Halbleitergehäuse
DE3910470C2 (de) * 1988-03-31 1995-03-09 Toshiba Kawasaki Kk Leistungshalbleiter-Schaltervorrichtung mit in den beteiligten Chips verringerter Wärmebelastung, insb. Wärmespannung
DE59107655D1 (de) * 1991-02-22 1996-05-09 Asea Brown Boveri Abschaltbares Hochleistungs-Halbleiterbauelement
JP3180863B2 (ja) * 1993-07-27 2001-06-25 富士電機株式会社 加圧接触形半導体装置およびその組立方法
US5563447A (en) * 1993-09-07 1996-10-08 Delco Electronics Corp. High power semiconductor switch module

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105074920A (zh) * 2013-04-09 2015-11-18 Abb技术有限公司 功率半导体模块
KR20150140289A (ko) * 2013-04-09 2015-12-15 에이비비 테크놀로지 아게 전력 반도체 모듈
CN105074920B (zh) * 2013-04-09 2020-12-22 Abb电网瑞士股份公司 功率半导体模块
KR102200166B1 (ko) * 2013-04-09 2021-01-08 에이비비 슈바이쯔 아게 전력 반도체 모듈

Also Published As

Publication number Publication date
DE19644009A1 (de) 1998-05-07
EP0938750A1 (de) 1999-09-01
WO1998019340A1 (de) 1998-05-07
KR20000052973A (ko) 2000-08-25

Similar Documents

Publication Publication Date Title
US5341003A (en) MOS semiconductor device having a main unit element and a sense unit element for monitoring the current in the main unit element
KR100305227B1 (ko) 턴오프고전력반도체컴포넌트
JP3677519B2 (ja) 電力用半導体モジュール
EP0237932B1 (de) Verdrahtungsentwurf für bipolare und unipolare Transistoren mit isoliertem Gate
JPS62124758A (ja) パワ−半導体モジユ−ル
JP3521757B2 (ja) 半導体モジュール電極構造
US4396932A (en) Method for making a light-activated line-operable zero-crossing switch including two lateral transistors, the emitter of one lying between the emitter and collector of the other
Motto et al. Characteristics of a 1200 V PT IGBT with trench gate and local life time control
CA1219382A (en) Power semiconductor device with main current section and emulation current section
JP2001502849A (ja) 電界制御型の遮断可能なパワー半導体スイッチの大面積大電流モジュール
Chen Power semiconductors: Fast, tough, and compact: MOS field-effect transistors and gate turnoff thyristors are bringing new levels of performance in switching frequencies and current and voltage ratings
JP2962136B2 (ja) 絶縁ゲート型半導体装置及びそれを用いた電力変換装置
US5591993A (en) Structure for connecting flat type semiconductor switches in parallel
JP2000183282A (ja) 半導体装置及び半導体モジュール
JP2002171768A (ja) 電力変換装置
JP2000074988A (ja) 半導体装置の製造方法
JP3507714B2 (ja) マルチチップモジュール型半導体装置
JP3525823B2 (ja) 相補型ｉｇｂｔの実装構造
JP2809998B2 (ja) 電力用ｍｏｓデバイスチップ及びパッケージアッセンブリ
US5798287A (en) Method for forming a power MOS device chip
JP2020038885A (ja) 半導体装置
JP2785271B2 (ja) 半導体装置
JPH084122B2 (ja) 半導体装置
US20030122149A1 (en) Complex semiconductor device and electric power conversion appratus using it
JPH09275186A (ja) 半導体装置