JP2001345519A - レーザ素子 - Google Patents

レーザ素子

Info

Publication number
JP2001345519A
JP2001345519A JP2000164338A JP2000164338A JP2001345519A JP 2001345519 A JP2001345519 A JP 2001345519A JP 2000164338 A JP2000164338 A JP 2000164338A JP 2000164338 A JP2000164338 A JP 2000164338A JP 2001345519 A JP2001345519 A JP 2001345519A
Authority
JP
Japan
Prior art keywords
layer
type
doped
laser device
nitride semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000164338A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001345519A5 (enExample
Inventor
Shinichi Nagahama
慎一 長濱
Tomoya Yanagimoto
友弥 柳本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Chemical Industries Ltd
Original Assignee
Nichia Chemical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Chemical Industries Ltd filed Critical Nichia Chemical Industries Ltd
Priority to JP2000164338A priority Critical patent/JP2001345519A/ja
Publication of JP2001345519A publication Critical patent/JP2001345519A/ja
Publication of JP2001345519A5 publication Critical patent/JP2001345519A5/ja
Pending legal-status Critical Current

Links

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  • Semiconductor Lasers (AREA)
JP2000164338A 2000-06-01 2000-06-01 レーザ素子 Pending JP2001345519A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000164338A JP2001345519A (ja) 2000-06-01 2000-06-01 レーザ素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000164338A JP2001345519A (ja) 2000-06-01 2000-06-01 レーザ素子

Publications (2)

Publication Number Publication Date
JP2001345519A true JP2001345519A (ja) 2001-12-14
JP2001345519A5 JP2001345519A5 (enExample) 2007-07-19

Family

ID=18667972

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000164338A Pending JP2001345519A (ja) 2000-06-01 2000-06-01 レーザ素子

Country Status (1)

Country Link
JP (1) JP2001345519A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6801559B2 (en) 2002-03-08 2004-10-05 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor laser

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05183235A (ja) * 1992-01-07 1993-07-23 Matsushita Electron Corp 半導体レーザ装置
JPH10150240A (ja) * 1996-11-19 1998-06-02 Sony Corp 自励発振型半導体レーザ
JP2000012903A (ja) * 1998-04-21 2000-01-14 Nichia Chem Ind Ltd 窒化物半導体素子
JP2000114664A (ja) * 1998-10-06 2000-04-21 Nichia Chem Ind Ltd 窒化物半導体レーザ素子
JP2000114660A (ja) * 1998-09-30 2000-04-21 Furukawa Electric Co Ltd:The リッジ導波路型半導体レーザ素子

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05183235A (ja) * 1992-01-07 1993-07-23 Matsushita Electron Corp 半導体レーザ装置
JPH10150240A (ja) * 1996-11-19 1998-06-02 Sony Corp 自励発振型半導体レーザ
JP2000012903A (ja) * 1998-04-21 2000-01-14 Nichia Chem Ind Ltd 窒化物半導体素子
JP2000114660A (ja) * 1998-09-30 2000-04-21 Furukawa Electric Co Ltd:The リッジ導波路型半導体レーザ素子
JP2000114664A (ja) * 1998-10-06 2000-04-21 Nichia Chem Ind Ltd 窒化物半導体レーザ素子

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6801559B2 (en) 2002-03-08 2004-10-05 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor laser
US7186579B2 (en) 2002-03-08 2007-03-06 Toyoda Gosei Co., Ltd. Method for producing a group III nitride compound semiconductor laser

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