JP2001330957A5 - - Google Patents

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Publication number
JP2001330957A5
JP2001330957A5 JP2000150173A JP2000150173A JP2001330957A5 JP 2001330957 A5 JP2001330957 A5 JP 2001330957A5 JP 2000150173 A JP2000150173 A JP 2000150173A JP 2000150173 A JP2000150173 A JP 2000150173A JP 2001330957 A5 JP2001330957 A5 JP 2001330957A5
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JP
Japan
Prior art keywords
photosensitive composition
acid
group
composition according
positive
Prior art date
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Granted
Application number
JP2000150173A
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English (en)
Japanese (ja)
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JP4235344B2 (ja
JP2001330957A (ja
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Priority to JP2000150173A priority Critical patent/JP4235344B2/ja
Priority claimed from JP2000150173A external-priority patent/JP4235344B2/ja
Publication of JP2001330957A publication Critical patent/JP2001330957A/ja
Publication of JP2001330957A5 publication Critical patent/JP2001330957A5/ja
Application granted granted Critical
Publication of JP4235344B2 publication Critical patent/JP4235344B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2000150173A 2000-05-22 2000-05-22 ２層レジスト用ポジ型シリコン含有レジスト組成物及びパターン形成方法 Expired - Fee Related JP4235344B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000150173A JP4235344B2 (ja) 2000-05-22 2000-05-22 ２層レジスト用ポジ型シリコン含有レジスト組成物及びパターン形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000150173A JP4235344B2 (ja) 2000-05-22 2000-05-22 ２層レジスト用ポジ型シリコン含有レジスト組成物及びパターン形成方法

Publications (3)

Publication Number Publication Date
JP2001330957A JP2001330957A (ja) 2001-11-30
JP2001330957A5 true JP2001330957A5 (hr) 2006-01-05
JP4235344B2 JP4235344B2 (ja) 2009-03-11

Family

ID=18655926

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000150173A Expired - Fee Related JP4235344B2 (ja) 2000-05-22 2000-05-22 ２層レジスト用ポジ型シリコン含有レジスト組成物及びパターン形成方法

Country Status (1)

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JP (1) JP4235344B2 (hr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4141625B2 (ja) * 2000-08-09 2008-08-27 東京応化工業株式会社 ポジ型レジスト組成物およびそのレジスト層を設けた基材
JP4295937B2 (ja) * 2000-12-05 2009-07-15 株式会社Ｋｒｉ 活性成分及びそれを用いた感光性樹脂組成物
JP4262516B2 (ja) 2003-05-12 2009-05-13 富士フイルム株式会社 ポジ型レジスト組成物
JP4494060B2 (ja) * 2004-03-30 2010-06-30 東京応化工業株式会社 ポジ型レジスト組成物
JP4494061B2 (ja) * 2004-03-30 2010-06-30 東京応化工業株式会社 ポジ型レジスト組成物
JP5003894B2 (ja) * 2007-11-22 2012-08-15 日産化学工業株式会社 レジスト下層膜形成組成物及び半導体装置の製造方法
JPWO2015122293A1 (ja) * 2014-02-13 2017-03-30 富士フイルム株式会社 感光性樹脂組成物、硬化膜の製造方法、硬化膜、液晶表示装置、有機ｅｌ表示装置、タッチパネル表示装置
KR101848656B1 (ko) * 2015-04-30 2018-04-13 롬엔드하스전자재료코리아유한회사 오버코트 조성물 및 포토리소그래피 방법
KR20220097262A (ko) * 2020-12-30 2022-07-07 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 포토레지스트 탑코트 조성물 및 패턴 형성 방법
CN114690552A (zh) * 2020-12-30 2022-07-01 罗门哈斯电子材料有限责任公司 光致抗蚀剂组合物及图案形成方法
KR102515739B1 (ko) * 2022-12-07 2023-03-30 타코마테크놀러지 주식회사 감광성 수지 및 이를 포함하는 포토레지스트 조성물

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