JP2001326322A - Intermediate structure to be mounted with semiconductor, and method of manufacturing semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reform the warp of a circuit board and materialize stable connection reliability, by interposing a circuit board between plates A and B having openings corresponding to the positions where semiconductor elements A and B are to be mounted on both sides of the faces A and B of the circuit board, in a semiconductor mounting method which is used in the case of flip-chip- mounting semiconductor elements on both the face A and the face B of the circuit board. SOLUTION: Since the warp of a circuit board where semiconductor elements A and B are mounted is suppressed by providing an integrated structure of plate where a circuit board is interposed between the plates A1 and B2 having openings in the positions where the semiconductor elements A and B are to be mounted at the face A and the face B of the circuit board 3.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an intermediate structure to be mounted on a semiconductor and a method of manufacturing a semiconductor device when a plurality of semiconductor elements are flip-chip mounted on both sides of a circuit board.

[0002]

2. Description of the Related Art With the advance of the miniaturization technology of semiconductor processes, the capacity of memory devices has been increased. Against this background, solid-state memories such as flash memories have been used in place of magnetic recording and optical recording conventionally used as storage media.

[0003] Examples of these applications include memory cards such as IC cards and digital cameras, and SD (Secure Digital) having a security function.
l) Cards are spreading. Such memory cards are required to have even larger capacities in order to record music information and the like.

Since a memory card is small and thin, in order to accommodate a high-capacity memory therein, a semiconductor must be mounted in a form such as three-dimensional mounting or double-sided flip-chip mounting.

Hereinafter, an example of mounting using the double-sided flip-chip mounting technology (for example, Japanese Patent Application No.
324213) will be described with reference to the drawings.

FIG. 17 is a sectional view showing a structure of a structure in which a semiconductor element is flip-chip mounted on both sides of a circuit board using a conventional semiconductor mounting jig and a manufacturing procedure thereof. FIG. FIG. 19 is a cross-sectional view for explaining flip-chip mounting on both sides of a circuit board using the two-step protruding electrodes of FIG. 19; and FIG. 19 is a schematic diagram showing substrate deformation that occurs when flip-chip mounting is performed on one side of the circuit board. FIG.
17 to 19, the same parts are denoted by the same reference numerals.

[0007] As shown in FIG. 17, at a position opposed to a plurality of surface mount components which are pre-mounted on the surfaces of the circuit board A surface 4 and the circuit board B surface 7 and have different heights and sizes. A plate A1 and a plate B2 having an opening 6 at a position where the grooved portion 18 is to be mounted with the semiconductor element A5 have two surfaces, and the circuit board is disposed between the plate A1 and the plate B2. Thereafter, by fixing with the mounting screws 19, the warpage of the entire circuit board can be corrected. The restriction pins 20 restrict the plates A1 and B2 or the circuit board.

Next, the manufacturing procedure will be described. After the circuit board B surface 7 is arranged on the plate B2 in the downward direction, the plate A1 is arranged on the circuit board A surface 4 and fixed with the mounting screws 19 to form an integrated structure.
The semiconductor element A5 is mounted on the surface 4 and the semiconductor elements B8 on the circuit board B surface 7 are flip-chip mounted in a state where the plates A1 and B2 formed as an integral structure are inverted. And a method that enables flip-chip mounting on both sides of the B side 7.

[0009]

However, FIG.
When the mounting positions of the semiconductor elements on the circuit board A surface 4 and the B surface 7 do not overlap or when the rigidity of the circuit board itself is high and the thermal expansion coefficient is small (close to the semiconductor device) as in the conventional configuration shown in FIG. Although it is considered that there is no particular problem, for example, when a semiconductor element is mounted on both sides in a form like a memory card, as shown in FIG.
Has two semiconductor elements A5 of 13 × 10 × 0.3 mm.
It is necessary to perform flip-chip mounting on both sides of the circuit board B surface 7 such that two 6 × 6 × 0.3 mm semiconductor elements B8 overlap each other.

At this time, the circuit board is a multi-layer board having a thickness of 0.35 mm, and a card housed in an outer case (not shown) has a thickness of about 2 mm. As described above, since the mounting area is extremely narrow and the mounting is required to be defined in a thin size, it is difficult to configure the structure with the conventional mounting jig and manufacturing method.

That is, when a semiconductor element is mounted on both sides by a conventional method of manufacturing a mounting jig or a semiconductor device, there is a problem that it is difficult to mount the semiconductor element in a very narrow and thin size.

Further, as shown in FIG.
When the semiconductor element A5 is mounted on only one side of the substrate and the underfill resin 13 is thermally cured, the circuit board and the semiconductor element are warped due to a difference in thermal expansion coefficient between the semiconductor element A5 and the entire circuit board.

For example, if the semiconductor element is 10 × 10 × 0.4
When the encapsulant is cured at 150 ° C. in a combination of 0.4 mm and a circuit board thickness of 0.4 mm, warpage of about 35 μm occurs. Subsequently, when the semiconductor element B8 is mounted on the circuit board B surface 7, the mounting quality and the reliability are significantly deteriorated due to the warpage of the circuit board caused by the mounting of the semiconductor element A5.

That is, when a semiconductor element is mounted by a conventional method of manufacturing a mounting jig or a semiconductor device, there is a problem that a warpage occurs in a circuit board and mounting quality and reliability are significantly deteriorated.

In view of the above-mentioned problems of the conventional semiconductor element mounting method, the present invention provides a semiconductor which can be mounted on a thin, low-rigidity circuit board so that both sides of the semiconductor element are superimposed on each other, and can be mounted on a double-sided bare chip. It is an object of the present invention to provide a mounting target intermediate structure and a method of manufacturing a semiconductor device.

[0016]

In order to solve the above-mentioned problems, a first invention (corresponding to claim 1) provides a circuit board and a first semiconductor element on a first surface of the circuit board. A first plate having an opening at a position where the second substrate is mounted, and a second plate having an opening at a position where a second semiconductor element is mounted on the second surface of the circuit board. A semiconductor mounting target intermediate structure in which the first plate is in contact with the first surface and the second plate is in contact with the second surface, and each frame of the first plate is The semiconductor mounting target intermediate structure is characterized in that at least a part of each of the frames of the second plate opposing to the above is overlapped.

Further, the second invention (corresponding to claim 2)
Comprises a third plate having a projection at a position corresponding to the opening on the second surface of the circuit board, wherein the projection is in contact with the second surface of the circuit board; Is an intermediate structure to be mounted on a semiconductor according to the first aspect of the present invention, which is used when mounting the first semiconductor.

Further, the third invention (corresponding to claim 3)
Has a projection at a position corresponding to the opening on the first surface of the circuit board, and the projection has a spot facing structure at a position where the first semiconductor is mounted. And a fourth plate in which the protrusion contacts the first surface of the circuit board, wherein the fourth plate includes the second plate.
A semiconductor mounting target intermediate structure according to a second aspect of the present invention, which is used when mounting the semiconductor according to the first aspect of the invention.

The fourth invention (corresponding to claim 4)
Wherein the depth of the counterbore structure is equal to or greater than the height from the surface of the circuit board to the back surface of the first semiconductor element. It is.

Further, the fifth invention (corresponding to claim 5)
Is a method for manufacturing a semiconductor device in which first and second semiconductor elements are flip-chip mounted on a first surface and a second surface of a circuit board, respectively, wherein the first surface is mounted on the first surface of the circuit board. A first plate having an opening at a position where the semiconductor element is mounted, and a second plate having an opening at a position where the second semiconductor element is mounted on the second surface of the circuit board. The first surface of the circuit board and the second surface
To form a semiconductor mounting target intermediate structure, and each frame of the first plate of the semiconductor mounting target intermediate structure and at least a part of each frame of the second plate facing the semiconductor mounting target intermediate structure. Are overlapping,
After mounting the first semiconductor element face-down on the first surface of the circuit board, curing the underfill resin and performing flip-chip mounting, and inverting the semiconductor mounting target intermediate structure, A method of manufacturing a semiconductor device, comprising mounting the second semiconductor element face down on a second surface of a circuit board, curing the underfill resin, and performing flip mounting.

The sixth invention (corresponding to claim 6)
When mounting the first semiconductor, a third plate having a protrusion at a position corresponding to an opening of the second surface of the circuit board is brought into contact with the second surface of the circuit board A fifth aspect of the present invention is the method for manufacturing a semiconductor device according to the present invention.

A seventh aspect of the present invention (corresponding to claim 7)
When mounting the second semiconductor element, a projection provided with a spot facing structure at a position where the first semiconductor element is mounted is positioned at a position corresponding to an opening of the first surface of the circuit board. The method according to the fifth or sixth aspect of the present invention, wherein the fourth plate has a contact with the first surface of the circuit board.

The eighth invention (corresponding to claim 8)
Is a method of manufacturing a semiconductor device in which semiconductor elements are flip-chip mounted on both surfaces of a first surface and a second surface of a circuit board, respectively, wherein sizes of the semiconductor elements mounted on the two surfaces are different. When the positions where the semiconductor elements are mounted overlap each other, the semiconductor element having the smaller size is mounted face down on the first surface of the circuit board, and the underfill resin is cured and flip-chip mounted. Then, after flipping the circuit board, mounting the larger semiconductor element face down on the second surface of the circuit board, curing the underfill resin, and performing flip chip mounting. This is a method for manufacturing a semiconductor device.

The ninth invention (corresponding to claim 9)
Is a method for manufacturing a semiconductor device in which first and second semiconductor elements are flip-chip mounted on a first surface and a second surface of a circuit board, respectively, wherein the first surface is mounted on the first surface of the circuit board. After mounting the semiconductor element face down, the underfill resin is temporarily cured at a curing reaction rate of 98% or less and flip-chip mounted, and the second semiconductor element is face down on the second surface of the circuit board. After the mounting, the underfill resin is completely cured and flip-chip mounted.

According to a tenth aspect of the present invention, there is provided a semiconductor device in which first and second semiconductor elements are flip-chip mounted on both the first and second surfaces of a circuit board, respectively. The first semiconductor element is mounted face-down on the first surface of the circuit board, and the underfill resin is provisionally cured at a curing reaction rate of 98% or less and flip-chip mounted. After mounting the second semiconductor element face down on the second surface of the circuit board,
A method for manufacturing a semiconductor device, comprising temporarily curing an underfill resin at a curing reaction rate of 98% or less, mounting the flip-chip, and completely curing the underfill resin on both surfaces.

According to an eleventh aspect of the present invention (corresponding to claim 11), the underfill resin material used for the first surface and the second surface of the circuit board has the same thermal expansion coefficient and Young's modulus. A ninth or tenth aspect of the present invention is the method for manufacturing a semiconductor device according to the present invention.

According to a twelfth aspect of the present invention (corresponding to claim 12), the first surface and the second surface of the circuit board are respectively provided with the first and second surfaces.
And a method of manufacturing a semiconductor device in which a second semiconductor element is flip-chip mounted, comprising: a first plate having an opening at a position where the first semiconductor element is mounted on a first surface of the circuit board; A second plate having an opening at a position where the second semiconductor element is mounted on a second surface of the circuit board; and a first plate and a second surface of the circuit board, respectively. To form an intermediate structure to be mounted on a semiconductor, and each frame of the first plate of the intermediate structure to be mounted on the semiconductor and at least a part of each frame of the second plate opposed thereto are overlapped. The first semiconductor element is mounted face-down on the first surface of the circuit board to make electrical connection, and after the semiconductor mounting target intermediate structure is inverted, the circuit is mounted. The second surface of the substrate The second semiconductor element is mounted face-down to make electrical connection, and a gap between the first and second semiconductor elements and the circuit board is filled with an underfill resin and then heated and cured. 6 shows a method for manufacturing a semiconductor device.

According to a thirteenth aspect of the present invention, when an electrical connection is made to the first semiconductor, a projection is provided at a position corresponding to the opening on the second surface of the circuit board. A twelfth method of manufacturing a semiconductor device according to the present invention, wherein a third plate having a portion is brought into contact with the second surface of the circuit board.

According to a fourteenth aspect of the present invention (corresponding to claim 14), when an electrical connection is made to the second semiconductor element,
A fourth plate having a projection provided with a spot facing structure at a position where the first semiconductor element is mounted at a position corresponding to an opening of the first surface of the circuit board; The twelfth or thirteenth aspect, wherein the twelfth or thirteenth aspect is brought into contact with a surface
This is a method for manufacturing a semiconductor device according to the present invention.

According to a fifteenth invention (corresponding to claim 15), in the method of manufacturing a semiconductor device according to any one of the fifth to fourteenth inventions, an electrical connection between the semiconductor element and the circuit board is provided. The semiconductor device is characterized in that the connection is a structure connected via a conductive adhesive, and an insulating resin is interposed between the semiconductor element and the circuit board to be heated and cured simultaneously with the conductive adhesive. It is a manufacturing method of.

[0031]

Embodiments of the present invention will be described below with reference to the drawings.

(First Embodiment) First, the first embodiment of the present invention will be described.
An embodiment will be described with reference to the drawings.

FIG. 1 is a cross-sectional view showing a configuration in which a semiconductor element is flip-chip mounted on both sides of a circuit board using a semiconductor mounting jig according to the first embodiment of the present invention, and FIG. It is the perspective view.

1 and 2, a plate A1 and a plate B2 are semiconductor mounting jigs in the present embodiment, and the semiconductor element A5 is mounted on the A surface 4 of the circuit board 3 at the position where the semiconductor element A5 is mounted. A plate A1 provided with an opening 6 so as not to come into contact with A5 is formed. Similarly, at a position where the semiconductor element B8 is mounted on the B surface 7 of the circuit board 3, an opening 6 not coming into contact with the semiconductor element B8 is provided. Is provided on the plate B2.

Each frame of the plate A1 and each frame of the plate B2 opposed thereto at least partially overlap.

By thus interposing the circuit board 3 between the plate A1 and the plate B2, the plate A1 and the plate B2 can be fixed by a fixing means such as plate load or screw fastening.
The warpage of the entire circuit board 3 and the local warpage of the portion where the semiconductor elements A5 and B8 are flip-chip mounted can be suppressed.

Further, plate A1 and plate B2
By using an integrated structure having a plurality of openings, a large number of semiconductor elements can be flip-chip mounted.

FIG. 3 shows a configuration of a semiconductor mounting jig according to the first embodiment of the present invention, in which semiconductor elements are flip-chip mounted on both sides of a circuit board using plates having different opening shapes. It is sectional drawing which shows a structure in the case.

As shown in FIG. 3, in this embodiment, when the semiconductor elements A5 or B8 having different sizes are mounted on the A surface 4 and the B surface 7 of the circuit board 3, for example, In the case where the small-sized semiconductor element A5 is mounted on the circuit board 4 and the large-sized semiconductor element B8 is mounted on the circuit board B surface 7, the shape of the opening 6 of the plate A1 is made narrower than the plate B2 and the semiconductor element B8 is The back surface a of the joint 9 to be mounted is supported by the plate A1. Also in this case, at least a part of each frame of the plate A1 and each frame of the plate B2 facing them overlap.

Therefore, the semiconductor element B having a large size
8, the load at the time of mounting can be received by the plate A1, so that the deformation of the circuit board 3 can be prevented,
The influence on the connection reliability of the semiconductor element B8 can be minimized.

FIG. 4 shows a configuration of the first embodiment of the present invention in which the semiconductor device is flip-chip mounted on both sides of a circuit board using a plate having a projection structure. FIG. 5 is a sectional view, and FIG. 5 is a perspective view thereof.

As shown in FIG. 4 and FIG.
The circuit board 3 is interposed between the plate 1 and the plate B2 to form an integral structure, and the circuit board B surface 7 that appears in the opening 6 of the plate B2 is supported by a plate C10 having a protruding structure. Semiconductor device A5 mounted on 4
Since the warpage of the mounting area is further flattened and the circuit board having low rigidity can be held, it is possible to prevent the circuit board from being bent or deformed due to a load at the time of mounting.

The height of the projection of the plate C10 is preferably the same as the thickness of the plate A1 or the plate B2.

FIG. 6 shows a case where a semiconductor device is flip-chip mounted on both sides of a circuit board by using a configuration in which a semiconductor mounting jig according to the first embodiment of the present invention has a counterbore structure on a projection. It is sectional drawing which shows a structure of.

As shown in FIG. 6, by providing a plate D12 having a counterbore portion 11 at a position where a semiconductor element is mounted on the back surface of the circuit board 3, the protrusion of the plate C10 is provided. 4 and the circuit board B surface 7 can be easily mounted even if they are differently arranged or partially overlapped, and the entire circuit board 3 is also corrected for warpage. can do.

Further, the depth of the counterbore structure of the plate D12 is equal to or greater than the height from the surface of the circuit board 3 to the back surface of the semiconductor element, so that damage to the semiconductor element mounted in advance can be minimized. It is possible.

In the case where the previously mounted semiconductor element has strength after the sealing is completed, it is preferable that the counterbore depth is the same height. Since the load of the element is received by the plate D12 and the semiconductor element, the circuit board 3 can be further prevented from being deformed and can be flattened.

(Second Embodiment) Next, a second embodiment of the present invention will be described.
An embodiment will be described with reference to the drawings. The first mentioned above
Components that are basically the same as those of the first embodiment are given the same reference numerals, and description thereof is omitted.

FIG. 7 is a cross-sectional view showing a configuration and a procedure when a semiconductor element is flip-chip mounted on both sides of a circuit board using a semiconductor mounting jig according to the second embodiment of the present invention.

As shown in FIG. 7, at a position where the semiconductor element A5 is mounted on the surface 4 of the circuit board A, a plate A1 provided with an opening 6 so as not to contact the semiconductor element A5 is formed. Similarly, at a position where the semiconductor element B8 is mounted on the surface 7 of the circuit board B, a plate B2 provided with an opening 6 not in contact with the semiconductor element B8 is formed.

After the circuit board 3 is interposed between the plate A1 and the plate B2 to form an integral structure, the semiconductor element A5 is first mounted on the circuit board A surface 4 face down. In order to increase the adhesion strength and reliability between the circuit board 3 and the semiconductor element, the underfill resin 13 is used.
And heat-cured to mount a flip chip.

Next, after the circuit board 3 having the integrated structure is inverted, the semiconductor element B8 is flip-chip mounted by the same means. If the above-described manufacturing method is used, it is possible to continuously mount the semiconductor elements on both surfaces of the circuit board 3 while keeping the warp of the circuit board 3 with a jig.

In the present embodiment, the opening shapes of the plate A1 and the plate B2 are provided at the same size and at the same place. However, when the shapes of the semiconductor elements mounted on both sides of the circuit board 3 are different, There is no problem even if the aperture ratios of the plate A1 and the plate B2 are different, and a structure in which the mounting portion is received by the plate on the back surface when the large-sized semiconductor element A5 or the semiconductor element B8 is mounted may be used.

FIG. 8 shows a configuration of a semiconductor mounting jig according to a second embodiment of the present invention, in which a semiconductor element is flip-chip mounted on both sides of a circuit board using a plate having a projection structure. FIG.

As shown in FIG. 8, a circuit board 3 is interposed between a plate A1 and a plate B2 to form an integrated structure.
Plate C having a projection structure in opening 6 of plate B2
After supporting the circuit board B surface 7 at 10, the circuit board A surface 4
The semiconductor element A5 is mounted face down, filled with the underfill resin 13 and then thermally cured to be flip-chip mounted.

Next, after the circuit board 3 having the integrated structure is turned over, the semiconductor element B8 is similarly flip-chip mounted on the circuit board B surface 7.

By using the above mounting method, when mounting the semiconductor element A5, since the back surface of the circuit board 3 is received by the plate C10, the deformation due to the mounting load of the semiconductor element A5 can be prevented, and the semiconductor element A5 can be stably mounted. Implementation becomes possible.

When the semiconductor element B8 is mounted on the surface 7 of the circuit board B, the rigidity of the circuit board 3 is obtained by the previously mounted semiconductor element A5.

FIG. 9 shows a semiconductor mounting jig according to a second embodiment of the present invention in which a plate having a projection structure is provided.
FIG. 4 is a cross-sectional view showing a configuration and a procedure when a semiconductor element is flip-chip mounted on both sides of a circuit board using a plate having a spot facing structure.

As shown in FIG. 9, after the circuit board 3 is interposed between the plate A1 and the plate B2 to form an integral structure, a plate C having a projection in the opening 6 of the plate B2 is formed.
At 10, the circuit board B surface 7 is supported.

The semiconductor element A5 is placed on the circuit board A surface 4.
Is mounted face down, underfill resin 13
After filling, heat curing is performed and flip chip mounting is performed.

Next, after the integrated circuit board 3 is turned over, the circuit board A is mounted on a plate D12 having a projection provided with a spot facing structure at a position where the semiconductor element A5 is mounted.
The surface 4 or the semiconductor element A5 or both are supported.

Then, the semiconductor element B8 is placed on the circuit board B surface 7.
Is similarly flip-chip mounted.

According to the above-described manufacturing method, the semiconductor device A5
When the semiconductor element B8 is mounted, the back surface of the circuit board 3 can be supported by a jig, so that deformation of the semiconductor element due to a mounting load or the like can be suppressed, and a stable connection state can be obtained.

(Third Embodiment) Next, a third embodiment of the present invention will be described.
An embodiment will be described with reference to the drawings. The second mentioned above
Components that are basically the same as those of the first embodiment are given the same reference numerals, and description thereof is omitted. FIG. 10 is a cross-sectional view showing a configuration and a procedure when flip-chip mounting semiconductor elements having different sizes on both surfaces of a circuit board according to the third embodiment of the present invention, and FIG. 11 is a schematic view thereof. is there.

As shown in FIG. 10, a semiconductor element A5 having a small size is mounted face-down on the circuit board A surface 4 supported by the plate C10, filled with the underfill resin 13, and then thermally cured to form a flip chip. Implement.

Next, after the circuit board 3 is turned over, a large-sized semiconductor element B8 is similarly flip-chip mounted, so that when the underfill resin 13 is thermally cured as shown in FIG. The correlation between the warpage of the semiconductor element and the circuit board tends to show a curved warp according to the shape of the semiconductor element. On the other hand, except for the periphery of W where the small-sized semiconductor element A5 is first mounted, the correlation is relatively high. There are flat parts. By mounting a large-sized semiconductor element B8 on this flat portion, a stable connection state can be maintained.

(Fourth Embodiment) Next, a fourth embodiment of the present invention will be described.
An embodiment will be described with reference to the drawings. The third mentioned above
Components that are basically the same as those of the first embodiment are given the same reference numerals, and description thereof is omitted.

FIG. 12 is a graph showing the relationship between the curing conditions of the underfill resin 13 and the curing reaction rate of the resin in the fourth embodiment of the present invention. FIG. 4 is a graph showing the relationship between the amounts of warpage of the semiconductor elements.

The curing conditions shown in FIG. 12 are as follows. When the ordinate indicates the curing reaction rate and the abscissa indicates the curing time, for example, the temperature condition is 70
The curing reaction rate of the underfill resin 13 under the conditions of 90 ° C., 90 ° C., 110 ° C., 130 ° C. and 150 ° C. is about 55% at 70 ° C., about 80% at 90 ° C. About 90% at 130 ° C, about 9% at 130 ° C
8%, and shows a value of 100% at 150 ° C. At 70 ° C. and 90 ° C. in the low temperature range, it takes time for the underfill resin 13 to be completely cured.

Further, there is a relative relationship between the curing reaction rate and the amount of warpage of the semiconductor element, and one example is shown in FIG. The vertical axis represents the amount of warpage of the semiconductor chip and the horizontal axis represents the curing reaction rate. For example, the circuit board is a four-layer board of aramid material (0.4 m thick).
m), when the size of the semiconductor element is 10 × 10 × 0.4 mm, when an acid anhydride epoxy-based encapsulant is used, the curing reaction rate is 40%, the warpage of the semiconductor element is 0 μm,
It shows a value of about 7 μm at 80%, about 25 μm at 98%, and about 35 μm at 100%.

Therefore, if the circuit board A surface 4 is mounted within a curing reaction rate of 80% to 98% with a small amount of warpage of the semiconductor element, the semiconductor element is relatively flat when mounted on the circuit board B surface 7. Implementation.

Using the above curing conditions, first, the circuit board A
After the semiconductor element A5 is mounted face down on the surface 4, the underfill resin 13 is filled, and after being heat-treated at 110 ° C. for 30 minutes, it is temporarily cured at a curing reaction rate of 80%, and flip-chip mounted.

Next, after the semiconductor element B8 is mounted face down on the circuit board B surface 7, the underfill resin 13 of the semiconductor element mounted on both sides of the circuit board is heated to 150 ° C.
It is completely cured at a curing reaction rate of 100% by heat treatment for 30 minutes. As a result, the semiconductor element A5 that is first flip-chip mounted is changed from the pre-cured state to the completely cured state, and a sufficient adhesion strength is secured to the joint between the circuit board A surface 4 and the semiconductor element A5.

As described above, when the curing reaction rate of the underfill resin 13 of the semiconductor element A5 mounted on the circuit board A surface 4 is in the range of 80% to 98%, the warpage of the semiconductor element A5 is small. Since flip-chip mounting can be realized, mounting of the semiconductor element B8 mounted on the circuit board B surface 7 is facilitated.

Further, after mounting the semiconductor element B8, the connection reliability can be improved by completely curing the sealing material of the underfill resin 13 at a curing reaction rate of 100%.

The above-mentioned semiconductor chip has a thermal expansion coefficient of 2-3.
The circuit board is a resin substrate, and an aramid fiber substrate having a thermal expansion coefficient relatively close to that of a semiconductor chip of 7 to 15 ppm is used.

(Fifth Embodiment) Next, a fifth embodiment of the present invention will be described.
An embodiment will be described. Since the same curing conditions as in the fourth embodiment are used, the drawings are omitted.

After the semiconductor element A5 is mounted face down on the circuit board A surface 4, the underfill resin 13 is temporarily cured within a curing reaction rate of 80 to 98% and flip-chip mounted. After the semiconductor element B8 is mounted face down, the underfill resin 13 is similarly temporarily cured within a curing reaction rate of 80 to 98%, and after flip chip mounting, both sides are completely cured.

Since the circuit board A surface 4 and the semiconductor element A5 and the circuit board B surface 7 and the semiconductor element B8 are cured by the underfill resin 13 having the same physical properties, the flip-chip By once setting the sealing material of the mounted semiconductor element to the same curing reaction rate, the stress is balanced and the influence of the thermal stress is suppressed, and the reliability is improved.

It is preferable that the materials of the underfill resin 13 formed on the circuit board A surface 4 and the circuit board B surface 7 have the same thermal expansion coefficient and Young's modulus.

(Sixth Embodiment) Next, a sixth embodiment of the present invention will be described.
An embodiment will be described with reference to the drawings. The first mentioned above
Components that are basically the same as those of the first embodiment are given the same reference numerals, and description thereof is omitted.

FIG. 14 is a sectional view showing the structure and procedure of double-sided flip-chip mounting for electrically connecting a circuit board and a semiconductor element using a semiconductor mounting jig according to a sixth embodiment of the present invention. It is.

The plate A1 having the opening 6 at the position where the semiconductor element A5 is mounted on the circuit board A surface 4 and the plate B2 having the opening 6 at the position where the semiconductor element B8 is mounted on the circuit board B surface 7 After the circuit board 3 is interposed therebetween to form an integrated structure, first, as shown in FIG. 14, two-stage protrusions are formed on the board land 14 having the connection pattern formed on the circuit board A surface 4 and the connection terminal of the semiconductor element A5. After the bumps 15 are formed, and the semiconductor element A5 having the conductive adhesive 16 transferred to the two-step protruding bumps 15 is mounted face down, the conductive adhesive 16 is cured, so that the circuit board A surface 4 And the semiconductor element A5 can be electrically connected.

The above-mentioned conductive adhesive 16 is different from the conventional epoxy adhesive in that it can alleviate the thermal stress generated by a rapid temperature change at the time of thermal shock, and has a good solder heat resistance test. High reliability can be obtained because they are joined with a highly reliable adhesive.

Further, since the adhesive strength of the conductive adhesive 16 is about 3 g per bump, the semiconductor element can be easily removed. Therefore, after the semiconductor element A5 is mounted, the defective semiconductor element and the mounting failure can be repaired by an electrical inspection using an in-circuit tester or the like.

Next, after the circuit board 3 having the integrated structure is turned over, the semiconductor element B8 is electrically connected in the same manner as in the above-described process.

Thereafter, the gap between the semiconductor element A5 and the semiconductor element B8 and the circuit board 3 is filled with the underfill resin 13 and cured by heating, so that a stable connection state can be maintained.

As shown in the perspective view of FIG. 15 and the cross-sectional view of FIG. 16, an insulating resin 17 is partially applied to the semiconductor element mounting surface of the circuit board 3 before mounting the semiconductor element. At the same time, by curing, the semiconductor element and the circuit board are temporarily fixed, so that the connection state can be maintained at the time of mounting and any external pressure.

Further, a plate on which the rear surface of the mounting surface of the circuit board B surface 7 appears at the opening 6 of the plate B2 having an integrated structure in which the circuit board 3 is interposed between the plate A1 and the plate B2 is formed with a projection structure. After supporting by C10, the semiconductor element A5 is mounted face down on the circuit board A surface 4 by using the same process as the double-sided flip chip mounting shown in FIG. After inverting the circuit board 3 having the structure, the semiconductor element B8 is electrically connected in the same manner as the above-described process.

Thereafter, a gap between the semiconductor element A5 and the semiconductor element B8 and the circuit board 3 is filled with an underfill resin 13 and cured by heating to manufacture a semiconductor device.

In the case where the above-described manufacturing method is used,
Since the underfill resin 13 is not filled when the semiconductor element is mounted on both sides, the mounting can be performed without warpage of the substrate. Thereafter, the gap between the semiconductor element mounted on both sides and the circuit board 3 is filled with the underfill resin 13 and then simultaneously heated and cured, so that the stress on both sides of the circuit board 3 is balanced and no warpage occurs. The semiconductor device manufactured in this manner is characterized by high initial quality and high reliability.

Further, a plate on which the back surface of the mounting surface of the circuit board B surface 7 is formed at the opening 6 of the plate B2 having an integrated structure in which the circuit board 3 is interposed between the plate A1 and the plate B2 is formed. After supporting the circuit board at C10, the semiconductor element A is mounted on the circuit board A surface 4 using the same process as the double-sided flip-chip mounting shown in FIG.
5 is mounted face down to make electrical connection. Next, after the circuit board 3 having the integrated structure is turned over, a counterbore portion 11 is provided at a position where the semiconductor element A5 is mounted, and the plate
Alternatively, after supporting the semiconductor element A5 or both, the semiconductor element B8 is electrically connected in the same manner as in the above-described process.

Thereafter, the gap between the semiconductor elements A5 and B8 and the circuit board 3 is filled with the underfill resin 13 and then cured by heating, so that the arrangement mounted on the circuit board A surface 4 and the circuit board B surface 7 is achieved. It can be easily implemented for different implementations.

Further, in the manufacturing method according to any one of the second to sixth embodiments of the present invention, the electrical connection between the semiconductor element and the circuit board has a structure via the conductive adhesive 16 and The insulating resin 17 is interposed between the element and the circuit board, and is heated and cured simultaneously with the conductive adhesive 16.

In the description of the present embodiment, a double-sided flip-chip configuration has been described as a method for mounting a semiconductor element. However, there is no problem with a bare-chip mounting method in which one side is face-up. Further, a mounting form such as ACF or C4 may be used.

Further, the circuit board A surface of the present embodiment is an example of the first surface of the circuit board of the present invention, and the circuit board B surface of the present embodiment is the second surface of the circuit board of the present invention. The semiconductor element A of the present embodiment is an example of the first semiconductor element of the present invention, and the semiconductor element B of the present embodiment is an example of the second semiconductor element of the present invention. The plates A, B, C, and D of the embodiment are examples of the first, second, third, and fourth plates, respectively, of the present invention. It is an example of a structure.

As described above, according to the method of manufacturing an intermediate structure to be mounted on a semiconductor and the semiconductor device of the present invention, the plate A having the opening at the position where the semiconductor element A or B is mounted on the surface A and the surface B of the circuit board is mounted. A circuit board is interposed between the circuit board and the plate B to form an integral structure, so that semiconductor elements can be flip-chip mounted on both sides in a state in which warpage of the circuit board is suppressed, and high connection reliability is obtained. be able to.

Further, by disposing a plate having a protruding structure in the opening of the plate, it is possible to support the back surface of the circuit board. Deformation can be prevented, and the reliability of mounting can be further improved.

Further, when mounting semiconductor elements A or B having different sizes on the A and B surfaces of the circuit board,
By making the shape of the opening of the plate A narrower than the plate B and supporting the back surface of the joint where the semiconductor element B is mounted with the plate A, the influence on the connection reliability of the semiconductor element B having a large size is minimized. Actually it can be suppressed.

Also, except for the periphery where the small-sized semiconductor element is first mounted, the relatively flat feature is used to
A large-sized semiconductor element B on a flat portion on the back surface of the circuit board
By mounting on both sides, a stable connection state can be maintained.

Further, in the above-mentioned underfill resin, since there is a relative relationship between the curing reaction rate and the amount of warpage of the semiconductor element, the curing reaction rate at which the amount of warpage of the semiconductor element is small is 80% to 9%.
By pre-curing in the range of 8%, the warpage of the substrate can be reduced, and after mounting the semiconductor element on the back surface, the underfill resin on both sides is completely cured, thereby facilitating the flip chip double-side mounting of the semiconductor element. be able to.

Further, after the semiconductor element mounted on both sides of the circuit board is temporarily cured with an underfill resin of 80 to 98% having the same curing reaction rate, it is completely cured at a curing reaction rate of 100%, so that warpage is caused. The underfill resin can be cured in a state where the stress is well balanced and the underfill resin can be cured. As described above, once the sealing material is brought into the same curing reaction rate, the stress is balanced, the influence of the thermal stress is suppressed, and the reliability is improved.

Further, unlike the conventional epoxy adhesive, the conductive adhesive for electrically connecting the circuit board and the semiconductor element relieves the thermal stress generated by a rapid temperature change at the time of thermal shock. High reliability can be obtained because the bonding is performed with an adhesive that can be used, and since the bump has a weight of about 3 g, the semiconductor element can be easily removed. After mounting, the in-circuit tester can be used. Repair can be performed if there is a defect by an electrical inspection such as that described above.

Further, a temporary fixing agent made of an insulating resin is applied to a part of the mounting region of the semiconductor element on the circuit board, and then the semiconductor element is mounted and cured simultaneously with the conductive adhesive.
Since the semiconductor element and the circuit board are temporarily fixed by the temporary fixing agent, the connection state can be maintained at the time of mounting and any external pressure.

[0106]

As is apparent from the above description, the present invention provides a semiconductor mounting intermediate structure in which a semiconductor element is arranged on a thin, low-rigidity circuit board so that both sides thereof are superimposed, and a double-sided bare chip mounting can be performed. And a method for manufacturing a semiconductor device.

[Brief description of the drawings]

FIG. 1 is a sectional view showing an example of a semiconductor mounting jig according to an embodiment of the present invention.

FIG. 2 is a perspective view of a semiconductor mounting jig according to the embodiment of the present invention.

FIG. 3 is a cross-sectional view of the semiconductor mounting jig according to the embodiment of the present invention formed by other means.

FIG. 4 is a cross-sectional view showing an example in which the semiconductor mounting jig according to the embodiment of the present invention further includes a plate having a projection structure.

FIG. 5 is a perspective view showing a semiconductor mounting jig according to the embodiment of the present invention.

FIG. 6 is a cross-sectional view illustrating an example in which a spot facing portion is further formed on a plate having a projection structure, which is a semiconductor mounting jig according to the embodiment of the present invention.

FIG. 7 is a cross-sectional view illustrating an example of a manufacturing process when mounting is performed using the semiconductor mounting jig according to the embodiment of the present invention.

FIG. 8 is a cross-sectional view showing a manufacturing process when the semiconductor mounting jig according to the embodiment of the present invention is further mounted using a plate having a protruding structure.

FIG. 9 is a cross-sectional view showing a manufacturing process in a case where the semiconductor device is mounted on a plate having a projection structure according to the embodiment of the present invention using a semiconductor mounting jig having a counterbore portion.

FIG. 10 is a cross-sectional view showing a manufacturing process when the semiconductor mounting jig according to the embodiment of the present invention is mounted using plates having different shapes.

FIG. 11 is a schematic diagram illustrating a warped state of a circuit board when performing double-sided flip-chip mounting according to an embodiment of the present invention.

FIG. 12 is a correlation diagram showing a curing reaction condition of the underfill resin in the embodiment of the present invention.

FIG. 13 is a correlation diagram showing a curing reaction rate of an underfill resin and an amount of warpage of a semiconductor element in the embodiment of the present invention.

FIG. 14 is a cross-sectional view showing a configuration for electrically connecting a circuit board and a semiconductor element according to an embodiment of the present invention.

FIG. 15 is a perspective view of a manufacturing process showing a configuration in the case where an insulating resin is applied to a circuit board and temporarily fixed in the embodiment of the present invention.

FIG. 16 is a cross-sectional view illustrating a configuration of a temporary fixing method according to an embodiment of the present invention.

FIG. 17 is a cross-sectional view showing an example of a conventional semiconductor mounting jig and an example of a manufacturing method thereof.

FIG. 18 is a cross-sectional view for explaining a case where flip-chip mounting is performed on both surfaces of a conventional circuit board.

FIG. 19 is a schematic diagram showing substrate deformation that occurs when flip-chip mounting is performed on one surface of a conventional circuit board.

[Explanation of symbols]

 Reference Signs List 1 plate A 2 plate B 3 circuit board 4 circuit board A surface 5 semiconductor element A 6 opening 7 circuit board B surface 8 semiconductor element B 9 bonding portion 10 plate C 11 spot facing portion 12 plate D 13 underfill resin 14 substrate land 15 Two-step projection bump 16 Conductive adhesive 17 Insulating resin 18 Groove processing part 19 Mounting screw 20 Regulator pin

Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat II (Reference) H01L 23/12 H01L 23/12 F H05K 3/32 3/34 509 (72) Inventor Hideo Kanzawa Kadoma, Osaka Pref. 1006 Kadoma, Matsushita Electric Industrial Co., Ltd. In-house (72) Inventor Kazuyoshi Amami 1006 Kazuma, Kazuma, Osaka Prefecture F-term (reference) 5E319 AA03 AA08 AB05 AC04 CD16 GG11 GG20 5F044 KK23 LL07 RR01 RR17 RR18 RR19 5F061 AA03 BA03 CB

Claims (15)

[Claims] A first plate having an opening at a position where a first semiconductor element is mounted on a first surface of the circuit board; and a second plate on a second surface of the circuit board. A second plate having an opening at a position where the semiconductor element is mounted, wherein the first plate is provided on the first surface of the circuit board,
A semiconductor mounting target intermediate structure in which the second plate is in contact with the second surface, wherein each frame of the first plate and each frame of the second plate opposed thereto are An intermediate structure to be mounted on a semiconductor, wherein the intermediate structure is at least partially overlapped. 2. A third plate having a projection at a position corresponding to an opening on the second surface of the circuit board, wherein the projection is in contact with a second surface of the circuit board, 2. The intermediate structure according to claim 1, wherein the third plate is used when mounting the first semiconductor. 3. 3. A circuit board having a projection at a position corresponding to an opening on the first surface, wherein the projection has a spot facing structure at a position where the first semiconductor is mounted. And a fourth plate in which the protrusion is in contact with a first surface of the circuit board, wherein the fourth plate is used when mounting the second semiconductor. The intermediate structure to be mounted on a semiconductor according to claim 2. 4. The intermediate structure according to claim 3, wherein a depth of the counterbore structure is equal to or greater than a height from a front surface of the circuit board to a back surface of the first semiconductor element. . 5. A method of manufacturing a semiconductor device, wherein first and second semiconductor elements are flip-chip mounted on a first surface and a second surface of a circuit board, respectively. A first plate having an opening at a position where the first semiconductor element is mounted; and a second plate having an opening at a position where the second semiconductor element is mounted on a second surface of the circuit board. Abuts the first surface and the second surface of the circuit board, respectively, to form a semiconductor mounting target intermediate structure; and each of the first plates of the semiconductor mounting target intermediate structure At least a part of the frame and each frame of the second plate facing the frame overlap, and the first semiconductor element is mounted face-down on the first surface of the circuit board. To cure the underfill resin After flip-chip mounting and inverting the semiconductor mounting target intermediate structure, the second semiconductor element is mounted face down on the second surface of the circuit board, and the underfill resin is cured and flipped. A method for manufacturing a semiconductor device, comprising: mounting. 6. When mounting the first semiconductor, a third plate having a protrusion at a position corresponding to an opening on the second surface of the circuit board is mounted on the second surface of the circuit board. 6. The method according to claim 5, wherein the contact is performed. 7. When mounting the second semiconductor element, a projection provided with a spot facing structure at a position where the first semiconductor element is mounted corresponds to an opening in the first surface of the circuit board. A fourth plate at a position corresponding to the first position of the circuit board.
7. The method of manufacturing a semiconductor device according to claim 5, wherein the semiconductor device is brought into contact with the surface of the semiconductor device. 8. A method of manufacturing a semiconductor device in which semiconductor elements are flip-chip mounted on both surfaces of a first surface and a second surface of a circuit board, wherein the sizes of the semiconductor elements mounted on the two surfaces are different. In the case where the positions where the semiconductor elements are mounted on the both surfaces are overlapped, the smaller semiconductor element is mounted face down on the first surface of the circuit board, and the underfill resin is cured. After flip-chip mounting and flipping the circuit board, the larger semiconductor element is mounted face-down on the second surface of the circuit board, and the underfill resin is cured to perform flip-chip mounting. A method of manufacturing a semiconductor device. 9. A method of manufacturing a semiconductor device, wherein first and second semiconductor elements are flip-chip mounted on a first surface and a second surface of a circuit board, respectively. After mounting the first semiconductor element face down, the underfill resin is preliminarily cured at a curing reaction rate of 98% or less and flip-chip mounted, and the second semiconductor element is mounted on the second surface of the circuit board by the face. A method for manufacturing a semiconductor device, wherein after mounting the semiconductor device in a down state, the underfill resin is completely cured and flip-chip mounted. 10. A method of manufacturing a semiconductor device, wherein first and second semiconductor elements are flip-chip mounted on both surfaces of a first surface and a second surface of a circuit board, respectively. After the first semiconductor element is mounted face down on the surface, the underfill resin is provisionally cured at a curing reaction rate of 98% or less and flip-chip mounted, and the second semiconductor element is mounted on the second surface of the circuit board. And mounting the flip-chip in a face-down manner, temporarily curing the underfill resin at a curing reaction rate of 98% or less, flip-chip mounting, and completely curing the underfill resin on both surfaces. 11. The method according to claim 9, wherein the underfill resin materials used for the first surface and the second surface of the circuit board have the same thermal expansion coefficient and Young's modulus. A method for manufacturing a semiconductor device. 12. A method for manufacturing a semiconductor device, wherein first and second semiconductor elements are flip-chip mounted on a first surface and a second surface of a circuit board, respectively. A first plate having an opening at a position where the first semiconductor element is mounted; and a second plate having an opening at a position where the second semiconductor element is mounted on a second surface of the circuit board. Abuts the first surface and the second surface of the circuit board, respectively, to form a semiconductor mounting target intermediate structure; and each of the first plates of the semiconductor mounting target intermediate structure At least a part of the frame and each frame of the second plate facing the frame overlap, and the first semiconductor element is mounted face-down on the first surface of the circuit board. Electrical connection is made, and the semiconductor After inverting the target intermediate structure, the second semiconductor element is mounted face down on the second surface of the circuit board to make an electrical connection, and the first and second semiconductor elements are A method for manufacturing a semiconductor device, comprising: filling a gap with the circuit board with an underfill resin; and heating and curing the gap. 13. When making an electrical connection to the first semiconductor, a third plate having a protrusion at a position corresponding to an opening on the second surface of the circuit board is attached to a second plate of the circuit board. 13. The method for manufacturing a semiconductor device according to claim 12, wherein the semiconductor device is brought into contact with the surface. 14. When making electrical connection to the second semiconductor element, a projection provided with a spot facing structure at a position where the first semiconductor element is mounted is formed in an opening on the first surface of the circuit board. 2. A circuit board according to claim 1, wherein a fourth plate provided at a position corresponding to the portion contacts the first surface of the circuit board.
14. The method for manufacturing a semiconductor device according to 2 or 13. 15. The method for manufacturing a semiconductor device according to claim 5, wherein an electrical connection between said semiconductor element and said circuit board is connected via a conductive adhesive. A method of manufacturing a semiconductor device, wherein an insulating resin is interposed between the semiconductor element and the circuit board, and heat-cured simultaneously with the conductive adhesive.