JP2004362602A - Rfid tag - Google Patents

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JP2004362602A
JP2004362602A JP2004216691A JP2004216691A JP2004362602A JP 2004362602 A JP2004362602 A JP 2004362602A JP 2004216691 A JP2004216691 A JP 2004216691A JP 2004216691 A JP2004216691 A JP 2004216691A JP 2004362602 A JP2004362602 A JP 2004362602A
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semiconductor device
antenna
rfid tag
terminal
connection
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JP2004362602A5 (en
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Asao Nakano
Yoshio Ozeki
朝雄 中野
良雄 大関
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Hitachi Ltd
株式会社日立製作所
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Abstract

<P>PROBLEM TO BE SOLVED: To provide an RFID tag with little poor connection. <P>SOLUTION: The RFID tag is provided with a metal antenna and a semiconductor device in which a terminal is joined to the antenna and the above problem is solved by adopting structure that the semiconductor device smaller than 0.5 mm square is joined to the antenna by a metal joint. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は、RFIDタグに関する。 The present invention relates to an RFID tag.

一般的な半導体装置の実装技術を大きく分類すると、ワイヤボンディングとワイヤレスボンディングに分けられる。 When the mounting technique of a general semiconductor device increases classifying divided into wire bonding and wireless bonding.

ワイヤボンディングは、半導体装置の端子と配線基板のパッドとの間を弧を描くようにボンディングするため、RFIDタグの薄型化を実現するのには向かない技術である。 Wire bonding for bonding in an arc between the terminals and the pads of the wiring substrate of the semiconductor device, a technique of not suitable to achieve the thickness of the RFID tag.

一方、ワイヤレスボンディングは、半導体装置の端子と配線基板との距離が短かく、直線的に接続することができるので、RFIDタグの薄型化に好適である。 Meanwhile, the wireless bonding, the distance between the terminals and the wiring substrate of the semiconductor device is short, it is possible to linearly connect, suitable for thinner RFID tag.

このワイヤレスボンディングには接触接続と金属接続がある。 There is contact connected to the metal connections to the wireless bonding.

接触接続の一例として、異方導電性接着剤(ACF:Anisometric Conductive Film)を用いた実装方式(以下ACF接続方式)が、特開平2001−24568号公報に記載されている。 As an example of a contact connection, anisotropic conductive adhesive (ACF: Anisometric Conductive Film) mounting method using (hereinafter ACF connection method) is described in JP-A-2001-24568.

この文献によれば、ICとアンテナとの間をACF接続方式で接合することにより、ワイヤボンディングや樹脂によるモールドを省くことができるので、ICカードの薄型化に好適であるとされている。 According to this document, by bonding between the IC and the antenna ACF connection method, it is possible to omit the mold by wire bonding or resin, and is to be suitable for thinning the IC card.

特開平2001−24568号公報 JP 2001-24568 JP

本出願人に属する従業者らは、0.5mm角以下のRFIDタグ用の半導体装置を開発した。 Employees have to belong to the present applicant has developed a semiconductor device for 0.5mm angle following RFID tag. そこで、本発明者らはこの半導体装置をアンテナに実装するのに、上記無線ICカードで採用したACF実装方式を適用することを検討した。 Accordingly, the present inventors to implement the semiconductor device to the antenna, and consider applying ACF mounting method employed in the wireless IC card.

実際に試作した結果、アンテナと半導体装置との間で接続不良を生じるものがあった。 Actually prototype a result, there is one cause defective connection between the antenna and the semiconductor device.

つまり、無線ICカードで採用している数mm角程度の半導体装置の実装技術が1mm角以下、特に0.5mm角以下(面積換算で0.25mm 以下)の半導体装置の実装にはそのまま適用できず、他のパラメータを検討する必要が生じることがわかった。 That is, it applies to the implementation of the semiconductor device mounting technology of the semiconductor device of several mm square adopted in the wireless IC card is less 1mm square, in particular below 0.5mm square (0.25 mm 2 or less in area terms) can not, it was found that the need to consider other parameters occurs.

本発明の目的は、0.5mm角以下の半導体装置を実装したRFIDタグの接続信頼性を高めることにある。 An object of the present invention is to improve the connection reliability of the RFID tag mounted with 0.5mm angle following semiconductor device.

上記課題は次の構成により解決できる。 The above problem can be solved by the following configuration.

0.5mm角よりも小さい半導体装置を金属接合で金属製のアンテナに接合した構造とすれば、接触接合のように硬化収縮力や熱収縮力を気にしなくてもよくなるので、単位面積あたりの端子面積が大きな半導体装置を採用しても接続不良が生じにくくなる。 If a smaller semiconductor device than 0.5mm angle and structure joined to a metallic antenna in metal bonding, since there is no need to worry about curing shrinkage force and thermal contraction forces as contact bonding, per unit area also terminal area employs a large semiconductor device hardly cause poor connection.

また、この金属接合として、鉛フリー化、短タクト化を実現する観点から、金と錫の合金でなされることが好ましい。 Further, as the metal bonding, lead-free, from the viewpoint of realizing a shorter tact is preferably made of gold and tin alloy.

これらの構造を実現するのに、端子上に金バンプが形成された0.5mm角よりも小さい半導体装置と、該銅箔上に錫メッキがなされたアンテナとを用いるようにすると、高価な金の使用量を抑えることができるので、好ましい。 To realize these structures, a small semiconductor device than 0.5mm angle gold bumps are formed on the terminal, when so used an antenna tinned is made on the copper foil, expensive gold it is possible to suppress the usage, preferred.

本発明によれば、接続不良の少ないRFIDタグを提供することができる。 According to the present invention, it is possible to provide a small RFID tag connection defective.

(実施例1) (Example 1)
以下、本発明のRFIDタグを、図を用いて説明する。 Hereinafter, the RFID tag of the present invention will be described with reference to FIG.

図1にRFIDタグの上面図及び断面図を、図2に半導体装置とアンテナとの接合部の拡大透過図を示す。 A top view and a cross-sectional view of an RFID tag in FIG. 1 is an enlarged transparent view of the joint between the semiconductor device and the antenna in FIG.

本態様のRFIDタグは、図1に示すように、アンテナに、ID発信機能を備えたフリップチップ方式で実装された半導体装置で、タグ全体で0.13mmの厚みがある。 RFID tag of this embodiment, as shown in FIG. 1, the antenna, the semiconductor device mounted in a flip chip method with an ID transmission function, there is a thickness of 0.13mm across the tag.

また、半導体装置は、厚みが0.06mmとなるようにバックグラインドされており、0.5mm角の外形をしている。 Further, the semiconductor device has a thickness which is back-grinding such that 0.06 mm, has a contour of 0.5mm square. また、半導体装置内部の集積回路と直接配線で接続されている2つの入出力端子と半導体装置内の集積回路に直接されていない2つの接続用端子の計4つの端子が、半導体装置の重心を中心として90°づつずれて入出力端子、接続用端子、入出力端子、接続用端子の順に形成されている(入出力端子同士及び接続用端子同士が対向配置)。 Also, a total of four terminals of the two connection terminals that are not directly to two input terminals and the integrated circuit in the semiconductor device are connected by a semiconductor device inside the integrated circuit and the direct wiring, the center of gravity of a semiconductor device output terminal shifted by one 90 ° around the connecting terminals, output terminals, sequentially formed on the (input-output terminals and between the connection terminals to each other face each) of the connection terminals. また、この半導体装置は、2.45GHz帯のマイクロ波をアンテナで受信し、そのマイクロ波から生じる自己整流を電力源として動作する半導体装置で、かかるマイクロ波の信号を受け取ったことをトリガとして、内臓している記憶装置に格納された128ビットのデータを送信信号に変換してアンテナに送り返す機能を備えている。 Further, the semiconductor device receives the microwave 2.45GHz band antenna, a semiconductor device which operates a self-rectifying arising from the microwave as a power source as a trigger that has received the signal of such a microwave, visceral converts the 128 bits of data stored in it are storage devices to transmit signals has a function to send back to the antenna.

また、アンテナは、ポリイミドテープ上の外縁に若干すき間を開けた56mmの長さの銅箔が形成され、半導体装置が実装されるアンテナの端部には、錫のメッキ膜が形成されている。 The antenna is formed the length of the copper foil 56mm drilled slightly gap on the outer edge of the polyimide tape, the semiconductor device is in the end of the antenna to be mounted, the plating film of tin is formed.

この半導体装置の全端子とアンテナの銅箔とが金と錫の合金で接合されている。 And copper foil of all terminal and the antenna are joined by an alloy of gold and tin in this semiconductor device.

また、半導体装置の側面及び下面と銅箔との間にはアンダーフィルが配置されている。 Further, the underfill is disposed between the side surface and the lower surface and the copper foil of a semiconductor device.

なお、接続用端子は接合のバランスを確保するために設けたので、2つの入出力端子と1つの接続用端子を備えているだけでもよい。 The connection terminals are so arranged to ensure the balance of the joint, or only has two input terminals and one of the connection terminals.

この構造は、次の工程により製造することができる。 This structure can be produced by the following steps.
工程1:樹脂フィルムであるポリイミドフィルム(ポリイミドテープ)の一つの主平面上に、銅箔を接着剤で接着することでアンテナを形成する。 Step 1: on one principal plane of the polyimide film is a resin film (polyimide tape), to form the antenna by bonding a copper foil with an adhesive. 接着した銅箔の上に錫をメッキして、接続パッド(接続電極)とする。 Plated tin on the adhesive copper foil, and the connection pads (connection electrodes).
工程2:次に、半導体装置の全端子上に金バンプを形成する。 Step 2: Next, a gold bump on all terminals of the semiconductor device.
工程3:工程1でメッキした錫が最上層になるようにアンテナを固定する。 Step 3: tin plating in the step 1 is to fix the antenna so that the uppermost layer. さらに、工程2で形成した金バンプとアンテナの錫が対面するように半導体装置の端子面を下方に向けて、アンテナと半導体装置の位置合わせを行う。 Furthermore, the terminal surface of the semiconductor device as tin gold bump and the antenna formed in the step 2 is facing downward, aligning the antenna and the semiconductor device.
工程4:非端子面である半導体装置の上方から下方へ200MPaの圧力で加圧するとともに、150℃で1.5秒加熱することで仮固定する。 Step 4: with pressurized at a pressure of 200MPa from above the semiconductor device is a non-terminal surface downward, is temporarily fixed by heating 1.5 seconds at 0.99 ° C..
工程5:さらに、精度の高い位置合わせを行い、200MPaの圧力で加圧するとともに、280℃で3秒加熱する。 Step 5: further performs high positioning accuracy, with pressurized at a pressure of 200 MPa, heated for 3 seconds at 280 ° C.. この加熱により錫が金に拡散するので、半導体装置の端子とアンテナの銅箔とが金錫合金による金属接合となる。 Since tin This heating diffuses into the gold, the copper foil terminal and the antenna of the semiconductor device is a metal bonding by gold-tin alloy.
工程6:半導体装置の下方にアンダーフィルを形成する。 Step 6: forming an underfill under the semiconductor device.

次に、本態様のRFIDタグの接続抵抗値に関する特性について図3を用いて説明する。 Next, characteristics related to the connection resistance of the RFID tag of the present embodiment will be described with reference to FIG.

上記製造方法で製造したRFIDタグは図3の(a)の特性を示す。 RFID tags manufactured by the above manufacturing method exhibits the characteristics of (a) of FIG.

85℃85%RHの高温高湿試験の結果、350サイクル程度で10mΩ程度の接続抵抗しか生じなかった。 85 ° C. 85% high-temperature and high-humidity test results of RH, did not occur only 10mΩ about connection resistance of about 350 cycles. 100mΩ程度で送信特性に影響を与えることがわかっているので、かかる特性は良好な接続抵抗といえる。 Since it has been found to influence the transmission characteristic at about 100 m [Omega, such properties and is therefore a good connection resistance.

−50℃〜125℃、各30分の温度サイクル試験の結果、350サイクルで20mΩ以下の接続抵抗しか発生しなかったので、高温高湿試験の結果と同様に、良好な接続抵抗であるといえる。 -50 ° C. to 125 ° C., the results of the temperature cycle test of 30 minutes each, since only 20mΩ following connection resistance at 350 cycles did not occur, similar to the results of high-temperature high-humidity test, it can be said that a good connection resistance .

上記製造工程4における仮固定の温度を225℃にした場合について、温度サイクル試験をやった場合でも、430サイクルで10mΩ程度しか生じていないので、仮固定の温度を150℃とした場合と同様に、良好な接続抵抗とすることができた。 The case of the temporary fixing of the temperature 225 ° C. in the Step 4, even when doing the temperature cycle test, because it does not occur only 10mΩ about 430 cycles, the temperature of the temporary fixing as in the case of the 0.99 ° C. were able to satisfactory connection resistance.

このように、本態様のRFIDタグは、0.5mm角以下の半導体装置とアンテナとの接合に金属接合を採用しているので、所望の接続不良の発生を低減できている。 RFID tag in this way, the present embodiment, because it uses the metal bonding for bonding the 0.5mm angle below the semiconductor device and the antenna, which can reduce the occurrence of the desired connection failure.

また、本構造では接合する金属として、錫と金の合金を用いている。 As the metal to be joined in this structure, and with tin and gold alloys. このように構成すると、鉛フリーのRFIDタグを実現することができるだけでなく、挟ピッチにしても、短タクトで接続信頼性を高めることができるようになっている。 With this configuration, it is possible not only to realize a lead-free RFID tags, even in the narrow pitch, thereby making it possible to enhance the connection reliability in a short tact.

また、このような接続方法を入出力端子と接続端子のどちらかに採用しても効果を得ることができるが、双方の端子に採用することで、一括リフローが可能になっている。 Although it is possible to obtain the effect by employing such a connection to either the connecting terminal and the output terminal, by adopting both the terminals, which enables batch reflow.

また、入出力端子は、双方同じ機能であるため、半導体装置の対角に対向するように配置することにより、180度逆向きに接合することができるようになる。 Further, input and output terminals, since both are the same function, by disposing so as to face diagonally semiconductor device, it is possible to joining the 180-degree opposite direction.

また、アンテナの錫メッキを2端子分つまり、入出力端子1つと接続用端子1つの2つを1つの接続端子で接合する構造とすることにより、多少の回転ずれでも接続不良とならない構造とすることができるようになる。 Moreover, two-terminal component of the tin-plated antenna that is, by the structure that joins the two input terminals and one connection terminal one by one connection terminal, a structure that does not connect with the failure in some rotational deviation it becomes possible. また、この構造では90度、270度に回転させても、接合することが可能になるので、さらに接合を容易にすることができる。 Moreover, 90 degrees in this structure, even when rotated 270 degrees, it becomes possible to bond, can facilitate further bonding.

図7にアンダーフィルがあった場合となかった場合の強度の差を示す。 Shows the difference in intensity when did the case where there is an under-fill is shown in FIG.

上記のように、本実施例の半導体装置は、バックグラインドを行うことにより、厚みを薄くしている。 As described above, the semiconductor device of this embodiment, by performing the back grinding, and reduce the thickness. このバックグラインドにより、半導体装置には小さなマイクロクラックが生じている。 This back-grinding, small micro-cracks are generated in the semiconductor device. かかる構造にアンダーフィルを形成すると、アンダーフィルがない場合に比べて外部からの点圧破壊に2倍以上強くなることがわかる。 When forming the underfill such a structure, it can be seen that stronger than twice the point pressure destruction from the outside compared to when there is no underfill.
(比較例) (Comparative Example)
次に、比較例として接触接合方式であるACF方式で実装した場合について説明する。 Next, the case where implemented in ACF method which is a contact bonding method as a comparative example.

図4にACF方式を採用した場合の実装方式を示す。 Figure 4 shows a mounting method in the case of adopting an ACF method.

透明なポリエチレンテレフタラートフィルム(以下、PETフィルム)上に長さ56mmの銅箔を接着してアンテナを形成する。 Transparent polyethylene terephthalate film (hereinafter, PET film) by bonding a copper foil of length 56mm on to form the antenna.

接着した銅箔上にACFを仮圧着する。 Temporarily bonding the ACF to the bonded copper foil.

半導体装置に金バンプを形成し、その金バンプとACFが対向するように半導体装置とアンテナを配置し、仮固定する。 The gold bumps formed on the semiconductor device, the gold bumps and ACF is disposed a semiconductor device and an antenna to face, temporarily fixed.

さらに、精度の高い位置合わせを再度行って、加圧加熱する。 Further, by performing the high positioning accuracy again to heat and pressure. この加圧加熱によりACFが硬化して金バンプと銅箔を直接接続する。 ACF This pressurizing and heating are connected to gold bumps and the copper foil directly cured.

図4の方法で製造したACF方式で接合した場合の高温高湿試験(85℃85%RH)の結果を図5に示す。 The results of the high-temperature high-humidity test (85 ℃ 85% RH) when joined with ACF method prepared by the method of FIG. 4 is shown in FIG.

0.3mm角の半導体装置を実装した場合、25時間で数百mΩの接続抵抗が発生している。 When mounting a semiconductor device of 0.3mm square, the connection resistance of a few hundred mΩ occurs at 25 hours.

また、0.5mm角の半導体装置を実装した場合でも、100時間経過時には、数百mΩ以上の接続抵抗が生じる。 Moreover, even when mounting the semiconductor device of 0.5mm square, at the time lapse of 100 hours hundreds mΩ or more connection resistance is caused. このように、0.5mm角以下の半導体装置の実装にACF方式を用いた場合、従来の半導体装置では生じなかった接続抵抗の顕著な増加が生じてしまう。 Thus, when using the ACF method for implementing 0.5mm angle below the semiconductor device, a marked increase in connection resistance did not occur in the conventional semiconductor device occurs.

通常の半導体装置は端子のない領域も多いので、端子数が多くても端子あたりのACFの面積を十分に確保でき、所望の接続安定性を得ることが出来ているが、本態様のようなRFIDタグを構成する0.5mm以下角の半導体装置では端子面積が装置面積に対して非常に大きくなるため、端子あたりのACFの接着能力(熱収縮力+硬化収縮力)が低下することになり、銅箔との接続安定性が低下してしまうからであると考えられる。 Since conventional semiconductor device free area many terminals, even if the number of terminals can be sufficiently secured area of ​​ACF per terminal, although it is possible to obtain a desired connection stability, such as in this embodiment since the terminal area in the semiconductor device of 0.5mm below the corner constituting the RFID tag is very large relative to the device area, the adhesion ability of the ACF per terminal (heat shrinkage force + hardening shrinkage force) will be reduced , connection stability of the copper foil is considered to be because lowered.

図6にACF方式と金と錫の金属接合方式との接続不良率を対比する。 Comparing the connection failure rate of the metal bonding method of the ACF method and gold and tin in Fig.

ACF方式を採用したRFIDタグは、1時間も経たない内に接続不良が発生し始め、50時間までに約85%が不良となった。 RFID tag adopting an ACF method, connection failure begins to occur in less than 1 hour, about 85% to 50 h becomes defective.

一方、金錫接続方式では1300時間経過後も不良率1%以下の良好な接続を維持することができた。 Meanwhile, the gold-tin connection method was able to maintain a good connection than 1 percent failure rate after 1300 hours.

RFIDタグの上面図及び断面図 Top view and a cross-sectional view of the RFID tag 半導体装置とアンテナとの接合部の拡大透過図 Enlarged transparent view of the joint between the semiconductor device and the antenna RFIDタグの接続抵抗値に関する特性を示す図 Is a graph showing characteristics regarding the connection resistance value of the RFID tag ACF方式を採用した実装構造 Implementation structure which adopted the ACF system ACF方式で接合した場合のRFIDタグの接続抵抗値に関する特性を示す図 Is a graph showing characteristics regarding the connection resistance value of the RFID tag in the case of bonding with ACF method ACF方式と金と錫の金属接合方式との接続不良率を示す図 It shows a connection failure rate of the ACF method and gold and tin metal bonding method アンダーフィルがあった場合となかった場合の強度を示す図 Shows the strength of the case was not as if there is a underfill

Claims (8)

  1. 金属製のアンテナと、該アンテナに端子が接合された半導体装置とを備えたRFIDタグであって、 A metal antenna, an RFID tag that includes a semiconductor device terminal to the antenna are joined,
    0.5mm角よりも小さい半導体装置が金属接合で該アンテナに接合されていることを特徴とするRFIDタグ。 RFID tag characterized in that it is joined to the antenna with a small semiconductor device is a metal bonding than 0.5mm angle.
  2. 請求項1において、 According to claim 1,
    前記金属接合は金と錫の合金でなされていることを特徴とするRFIDタグ。 RFID tags, wherein said metal bonding that is made of an alloy of gold and tin.
  3. 高分子フィルム上に銅箔が接着されているアンテナと該銅箔に端子が接合されている半導体装置を有するRFIDタグであって、 An RFID tag having a semiconductor device terminal to the antenna and copper foil copper foil on the polymer film is bonded is bonded,
    端子上に金バンプが形成された0.5mm角よりも小さい半導体装置と、該銅箔上に錫メッキがなされたアンテナとが用いられていることを特徴とするRFIDタグ。 RFID tags, wherein the smaller semiconductor device than 0.5mm angle gold bumps are formed on the terminal, that the antenna tinned is made on the copper foil is used.
  4. 請求項1から3のいずれかにおいて、 In any of claims 1 to 3,
    前記端子は入出力端子を含むことを特徴とするRFIDタグ。 RFID tag the terminal is characterized in that it comprises input and output terminals.
  5. 請求項4において、 According to claim 4,
    前記端子は接続端子を含むことを特徴とするRFIDタグ。 RFID tag the terminal is characterized in that it comprises a connection terminal.
  6. アンテナと、該アンテナに接続されている2つの入出力端子を備えた半導体装置と、を有するRFIDタグにおいて、 An antenna, the RFID tag having a semiconductor device having two input terminals connected to said antenna,
    前記半導体装置は、前記入出力端子が半導体装置の対角する位置に設けた半導体装置であることを特徴とするRFIDタグ。 The semiconductor device, RFID tag, wherein the input and output terminals is a semiconductor device which is provided in a position diagonal of the semiconductor device.
  7. 請求項6において、 According to claim 6,
    前記半導体装置は、もう一方の対角する位置に設けられた2つの接続用端子を備えていることを特徴とするRFIDタグ。 The semiconductor device, RFID tag, characterized in that it comprises two connection terminals provided at a position other diagonal.
  8. 請求項7において、 According to claim 7,
    前記アンテナは接続端子を2つ備え、 The antenna comprises two connection terminals,
    該アンテナの1つの接続端子と前記半導体装置の隣接する2つの端子とが接合されていることを特徴とするRFIDタグ。 RFID tag, characterized in that the two adjacent terminals of the one connection terminal and the semiconductor device of the antenna are joined.
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