JP2001303239A - Method for manufacturing ito target - Google Patents

Method for manufacturing ito target

Info

Publication number
JP2001303239A
JP2001303239A JP2000120355A JP2000120355A JP2001303239A JP 2001303239 A JP2001303239 A JP 2001303239A JP 2000120355 A JP2000120355 A JP 2000120355A JP 2000120355 A JP2000120355 A JP 2000120355A JP 2001303239 A JP2001303239 A JP 2001303239A
Authority
JP
Japan
Prior art keywords
mixed
solution
ito
tin
target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000120355A
Other languages
Japanese (ja)
Other versions
JP4522535B2 (en
Inventor
Toshiya Kurihara
敏也 栗原
Mitsuyuki Konaka
充之 古仲
Koichi Nakajima
光一 中島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Mining Holdings Inc
Original Assignee
Nikko Materials Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikko Materials Co Ltd filed Critical Nikko Materials Co Ltd
Priority to JP2000120355A priority Critical patent/JP4522535B2/en
Publication of JP2001303239A publication Critical patent/JP2001303239A/en
Application granted granted Critical
Publication of JP4522535B2 publication Critical patent/JP4522535B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Abstract

PROBLEM TO BE SOLVED: To reduce the number of pores by improving dispersibility of tin and to efficiently manufacture a target of ITO sintered compact reduced in the occurrence of nodules and suitably used for deposition of ITO thin film and, hereby, to suppress deterioration in film quality and reduction in the productivity of film. SOLUTION: The ITO target can be manufactured by mixing a disperse solution in which metastannic acid is dispersed with a disperse solution in which indium hydroxide is dispersed to form a mixed disperse solution, drying and calcining this mixed disperse solution, and subjecting a green compact of the resultant oxide powder mixture to sintering.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】この発明は、ITO膜を形成
するために使用するスパッタリング用ITOターゲット
の製造方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an ITO target for sputtering used for forming an ITO film.

【0002】[0002]

【従来の技術】ITO(インジウム−錫を主成分とする
複合酸化物)膜は液晶ディスプレーを中心とする表示デ
バイスの透明電極(膜)として広く使用されている。こ
のITO膜を形成する方法として、真空蒸着法やスパッ
タリング法など、一般に物理蒸着法と言われている手段
によって行われるのが普通である。特に、操作性や膜の
安定性からマグネトロンスパッタリング法を用いて形成
することが多い。
2. Description of the Related Art An ITO (composite oxide mainly containing indium-tin) film is widely used as a transparent electrode (film) of a display device mainly for a liquid crystal display. The method of forming the ITO film is generally performed by a means generally called a physical vapor deposition method such as a vacuum vapor deposition method or a sputtering method. In particular, it is often formed using a magnetron sputtering method from the viewpoint of operability and film stability.

【0003】スパッタリング法による膜の形成は、陰極
に設置したターゲットにArイオンなどの正イオンを物
理的に衝突させ、その衝突エネルギーでターゲットを構
成する材料を放出させて、対面している陽極側の基板に
ターゲット材料とほぼ同組成の膜を積層することによっ
て行われる。スパッタリング法による被覆法は処理時間
や供給電力等を調節することによって、安定した成膜速
度でオングストローム単位の薄い膜から数十μmの厚い
膜まで形成できるという特徴を有している。
[0003] The formation of a film by the sputtering method involves physically colliding positive ions, such as Ar ions, with a target provided on a cathode, and releasing the material constituting the target with the collision energy, thereby forming a film on the side of the anode facing the anode. By laminating a film having substantially the same composition as the target material on the substrate. The coating method by the sputtering method is characterized in that a thin film of angstrom unit to a thick film of several tens μm can be formed at a stable film forming rate by adjusting the processing time, the supplied power, and the like.

【0004】ITO膜を形成する場合に特に問題となる
のは、スパッタリングに伴いノジュールと呼ばれる微細
な突起物がターゲット表面のエロージョン部に発生する
ことであり、これにより異常放電やスパッタレートの低
下を引き起こす。さらに、スパッタチャンバ内に粗大な
粒子が浮遊するようになり、これが形成している膜に付
着して品質を低下させる原因となる。以上から、実際の
製造に際しては、ターゲットに発生したノジュールを定
期的に除去することが必要となり、これが著しく生産性
を低下させていた。
A particular problem when forming an ITO film is that fine projections called nodules are generated in the erosion portion of the target surface due to sputtering, which causes abnormal discharge and a decrease in sputter rate. cause. Further, coarse particles float in the sputtering chamber, which adhere to the formed film and cause deterioration in quality. As described above, in actual production, it is necessary to periodically remove nodules generated in the target, which significantly reduces productivity.

【0005】以上のことから、ノジュールの低減方法と
して焼結体の密度を可能な限り上げ、焼結体中の空孔を
少なくすることが提案された。しかし、これは加圧状態
での焼結が必要であり、密度をさらに上昇させるために
設備をよりいっそう大型にする必要があるという問題が
あり、工業的に効率の良い方法とは言えなかった。
[0005] From the above, it has been proposed to increase the density of the sintered body as much as possible and to reduce the number of pores in the sintered body as a method of reducing nodules. However, this requires sintering in a pressurized state, and there is a problem that the equipment needs to be further enlarged to further increase the density, and thus cannot be said to be an industrially efficient method. .

【0006】上記の問題を解決するために、焼結体内部
の空孔に関して検討した結果、空孔内壁及びその周辺に
酸化スズが偏析していることが明らかとなった。そし
て、このような偏析が発生する原因として、ITOの原
料である酸化スズが凝集していたことが挙げられる。し
たがって、スズの分散性を向上させることにより空孔を
減少させることができ、これによってノジュールの発生
の少ないITO焼結体ターゲットを効率的に製造するこ
とが可能である。
[0006] In order to solve the above-mentioned problem, as a result of examining pores inside the sintered body, it was found that tin oxide was segregated on the pore inner wall and its periphery. The cause of such segregation is that tin oxide, which is a raw material of ITO, is agglomerated. Therefore, the pores can be reduced by improving the dispersibility of tin, whereby it is possible to efficiently manufacture an ITO sintered body target with less generation of nodules.

【0007】一般に、ITO焼結体ターゲットは、酸化
インジウムと酸化スズを粉砕混合し、得られた混合粉を
成形、焼結することにより製造されている。酸化インジ
ウムと酸化スズとの粉砕混合には、ボールミル、V型混
合機、あるいはリボン型混合機による乾式又は湿式混合
が行われているが、混合に長時間を要し、長時間の混合
を行った場合であっても、必ずしも良好なスズの分散状
態を得ることができないという問題がある。また、この
酸化インジウムと酸化スズを得るために、インジウム塩
及びスズ塩がそれぞれ溶解した溶液に沈殿剤を添加し、
水酸化インジウム及びメタスズ酸のそれぞれの沈殿物を
得(中和法)、これを洗浄、焙焼して酸化インジウム又
は酸化スズのそれぞれの粉末を得るという方法が用いら
れた。参考までに、図3に従来の製造方法による(中和
法)工程のフローを示す。しかし、この中和法による場
合は、中和廃液が発生するため、生産コストが増加する
という問題があった。
Generally, an ITO sintered body target is manufactured by pulverizing and mixing indium oxide and tin oxide, and molding and sintering the obtained mixed powder. Dry or wet mixing with a ball mill, V-type mixer, or ribbon type mixer is used for the pulverization and mixing of indium oxide and tin oxide, but mixing takes a long time, and mixing for a long time is performed. However, even in such a case, there is a problem that it is not always possible to obtain a good tin dispersion state. In addition, in order to obtain the indium oxide and tin oxide, a precipitant is added to a solution in which the indium salt and the tin salt are dissolved,
A method was used in which respective precipitates of indium hydroxide and metastannic acid were obtained (neutralization method), washed and roasted to obtain respective powders of indium oxide or tin oxide. For reference, FIG. 3 shows a flow of a step (neutralization method) according to a conventional manufacturing method. However, in the case of this neutralization method, there is a problem that a production cost is increased because a neutralized waste liquid is generated.

【0008】同様に、この酸化インジウムと酸化スズを
得るために、金属インジウム及び金属スズをそれぞれ陽
極として電解し、水酸化インジウム及びメタスズ酸のそ
れぞれの沈殿物を得(電解法)、これを洗浄、焙焼して
酸化インジウムと酸化スズのそれぞれの粉末を得るとい
う方法が用いられた。この電解法は上記中和法と異な
り、廃液の発生が無いという優れた結果が得られた。し
かし、中和法及び電解法は、いずれも酸化インジウムと
酸化スズを混合し、これを成形して焼結する方法を前提
とするもので、良好なスズの分散状態を得ることができ
ないという問題があった。
Similarly, in order to obtain indium oxide and tin oxide, electrolysis is performed using indium metal and tin metal as anodes to obtain respective precipitates of indium hydroxide and metastannic acid (electrolytic method), which are washed. And roasting to obtain respective powders of indium oxide and tin oxide. This electrolysis method was different from the above-mentioned neutralization method, and an excellent result that no waste liquid was generated was obtained. However, both the neutralization method and the electrolytic method are based on a method in which indium oxide and tin oxide are mixed, molded and sintered, and a problem that a good tin dispersion state cannot be obtained. was there.

【0009】そこで、スズの分散状態を良好にするとい
う目的のために、インジウム塩及びスズ塩を予め混合
し、この混合溶液に沈殿剤を添加し、水酸化インジウム
とメタスズ酸の混合沈殿物を同時に得(共沈法)、これ
を洗浄、焙焼して酸化インジウムと酸化スズの混合粉を
得る方法も考えられた。この共沈法はスズの分散状態は
良好であるが、中和法と同様に、中和廃液が発生するた
め、生産コストが増加するという問題があった。また、
同様にスズの分散状態を良好にするという目的のため
に、インジウム−スズ合金を陽極として電解し、水酸化
インジウムとメタスズ酸の混合沈殿物を得(共電解
法)、これを洗浄、焙焼して酸化インジウムと酸化スズ
の混合粉を得る方法も考えられた。この共電解法はスズ
の分散状態は良好であり、上記共沈法と異なり、廃液の
発生が無いという優れた結果が得られた。
Therefore, for the purpose of improving the dispersion state of tin, an indium salt and a tin salt are previously mixed, a precipitant is added to the mixed solution, and a mixed precipitate of indium hydroxide and metastannic acid is formed. At the same time, a method of obtaining a mixed powder of indium oxide and tin oxide by washing and roasting the obtained powder (coprecipitation method) was also considered. This coprecipitation method has a good dispersion state of tin, but has a problem that the production cost increases because a neutralized waste liquid is generated as in the neutralization method. Also,
Similarly, for the purpose of improving the dispersion state of tin, electrolysis is performed using an indium-tin alloy as an anode to obtain a mixed precipitate of indium hydroxide and metastannic acid (co-electrolysis method), which is washed and roasted. A method of obtaining a mixed powder of indium oxide and tin oxide was also considered. In this co-electrolysis method, the dispersion state of tin was good and, unlike the above-mentioned co-precipitation method, an excellent result that no waste liquid was generated was obtained.

【0010】しかし、残念なことに電解液として使用す
る硝酸アンモニウムは、コスト及び純度維持の点で申し
分ないのであるが、電極表面に不導体であるメタスズ酸
が析出するため、連続的に電解を行うことができないと
いう問題が生じた。替わりの電解液として塩化アンモニ
ウムも考えられたが、塩素を含む電解液ではメタスズ酸
が析出しないけれども、得られた沈殿物から塩素イオン
を除去することが難しく、洗浄によるコスト増が生ずる
という問題があり、根本的な解決に至らなかった。
Unfortunately, ammonium nitrate used as an electrolytic solution is satisfactory in terms of cost and maintenance of purity. However, since metastannic acid, which is a non-conductor, is deposited on the electrode surface, continuous electrolysis is performed. There was a problem that it was not possible. Ammonium chloride was considered as an alternative electrolytic solution.However, although metastannic acid does not precipitate in an electrolytic solution containing chlorine, it is difficult to remove chloride ions from the obtained precipitate, and the problem of increased cost due to washing occurs. Yes, it did not lead to a fundamental solution.

【0011】[0011]

【発明が解決しようとする課題】本発明は、上記の諸問
題点の解決、特にスズの分散性を向上させることにより
空孔を減少させ、ITO薄膜形成に好適な高密度でノジ
ュール発生が少ないITO焼結体ターゲットを効率的に
製造し、これによってノジュールの発生に伴う生産性の
低下や品質の低下を抑制することを目的とするものであ
る。
DISCLOSURE OF THE INVENTION The present invention solves the above-mentioned problems, in particular, improves the dispersibility of tin to reduce vacancies, and is suitable for forming an ITO thin film with high density and low nodule generation. An object of the present invention is to efficiently manufacture an ITO sintered body target, thereby suppressing a decrease in productivity and a decrease in quality due to generation of nodules.

【0012】[0012]

【課題を解決するための手段】本発明は、 1 水酸化インジウムを分散させた分散溶液とメタスズ
酸を分散させた分散溶液を混合して混合分散溶液とし、
この混合分散溶液を乾燥させた後焙焼し、これによって
得た酸化物混合粉末の成形体を焼結することを特徴とす
るITOターゲットの製造方法 2 水酸化インジウムを電解法により製造することを特
徴とする上記1に記載のITOターゲットの製造方法 3 メタスズ酸を金属スズの硝酸溶解により製造するこ
とを特徴とする上記1又は2に記載のITOターゲット
の製造方法 4 混合分散溶液の乾燥に噴霧形乾燥装置を用いること
を特徴とする上記1〜3のそれぞれに記載のITOター
ゲットの製造法 5 混合分散溶液のpHが5以上9以下であることを特
徴とする上記1〜4のそれぞれに記載のITOターゲッ
トの製造方法を提供する。
Means for Solving the Problems The present invention provides: a mixed solution in which a dispersion solution in which indium hydroxide is dispersed and a dispersion solution in which metastannic acid is dispersed are mixed;
A method for producing an ITO target, characterized in that the mixed dispersion solution is dried and then roasted, and the molded body of the oxide mixed powder thus obtained is sintered. 2 Production of indium hydroxide by an electrolytic method. 3. The method for producing an ITO target according to the above item 1) 3. The method for producing an ITO target according to the above item 1 or 2, wherein metastannic acid is produced by dissolving metallic tin in nitric acid. 5. The method for producing an ITO target according to any one of the above items 1 to 3, wherein a shape drying device is used. 5. The pH of the mixed dispersion solution is 5 or more and 9 or less. And a method of manufacturing an ITO target.

【0013】[0013]

【発明の実施の形態】本発明者らは、従来の酸化物粉の
混合により製造する方法に替え、より簡単に、かつより
均一なスズの分散状態を得る方法を検討した結果、酸化
インジウムの前駆体である水酸化インジウムの分散溶液
及び酸化スズの前駆体であるメタスズ酸の分散溶液に着
目し、これらの分散溶液の段階、すなわちで水酸化イン
ジウムの分散溶液(スラリー)とメタスズ酸の分散溶液
(スラリー)とを混合して両者の混合分散溶液(混合ス
ラリー)とする。これによって、スズの分散性が飛躍的
に向上する。そして、これを乾燥及び焙焼して得た酸化
物混合粉を成形後、焼結することにより、スズ偏析のな
い焼結体を得ることができ、これによって、ノジュール
の発生の少ないITO焼結体ターゲットを製造すること
ができる。本発明のスラリーの混合によるITO焼結体
の製造工程のフローを図1に示す。
BEST MODE FOR CARRYING OUT THE INVENTION The present inventors have studied a method of obtaining a more simple and more uniform tin dispersion state, instead of the conventional method of manufacturing by mixing an oxide powder, and as a result, have found that indium oxide has Focusing on a dispersion solution of indium hydroxide as a precursor and a dispersion solution of metastannic acid as a precursor of tin oxide, these dispersion solution stages, namely, dispersion of indium hydroxide dispersion solution (slurry) and dispersion of metastannic acid The solution (slurry) is mixed to form a mixed and dispersed solution (mixed slurry). Thereby, the dispersibility of tin is dramatically improved. Then, after drying and roasting, the oxide mixed powder obtained is molded and then sintered, whereby a sintered body without tin segregation can be obtained. Body targets can be manufactured. FIG. 1 shows a flow of a process of manufacturing an ITO sintered body by mixing the slurry of the present invention.

【0014】原料となる水酸化インジウムの分散溶液
は、金属インジウムを酸(硝酸等)に溶解した溶液に、
アルカリ(アンモニア等)を加えて中和し、沈殿した水
酸化インジウムを洗浄し純水に分散させる方法(中和
法)又は金属インジウムを陽極として電解することによ
り生じた水酸化インジウムを洗浄し純水に分散させる方
法(電解法)によって製造することができる。このよう
に、特にその製造方法を限定するものではないが、電解
法により製造する方がコスト面で有利であり、また廃液
処理を必要としないので、より有効である。原料となる
メタスズ酸の分散溶液は、金属スズを硝酸に溶解して沈
殿したメタスズ酸を洗浄して純粋に分散させる方法(溶
解沈殿法)又は金属スズを陽極として電解することによ
り生じたメタスズ酸を洗浄し純水に分散させる方法(電
解法)によって製造することができる。
A dispersion solution of indium hydroxide as a raw material is prepared by dissolving metal indium in an acid (such as nitric acid).
A method of neutralizing by adding an alkali (ammonia or the like), washing the precipitated indium hydroxide and dispersing it in pure water (neutralization method), or washing the indium hydroxide generated by electrolysis using metal indium as an anode and purifying the indium hydroxide. It can be produced by a method of dispersing in water (electrolytic method). As described above, the production method is not particularly limited, but production by the electrolytic method is more advantageous in terms of cost, and is more effective because waste liquid treatment is not required. The dispersing solution of metastannic acid as a raw material is a method of dissolving metallic tin in nitric acid, washing the precipitated metastannic acid and dispersing it purely (dissolution precipitation method), or metastannic acid generated by electrolysis using metallic tin as an anode. Can be manufactured by a method of washing and dispersing in pure water (electrolytic method).

【0015】このように、特にその製造方法を限定する
ものではないが、電解法によりメタスズ酸を得る方法に
おいて電解液として使用する硝酸アンモニウムは、コス
ト及び純度維持の点で申し分ないのであるが、電極表面
に不導体であるメタスズ酸が析出するため、連続的に安
定な電解を行うことができないという問題がある。電解
液として塩化アンモニウムも考えられるが、塩素を含む
電解液ではメタスズ酸は析出しないが、得られた沈殿物
から塩素イオンを除去することが難しく、洗浄によるコ
スト増が生ずるという問題がある。したがって、溶解沈
殿法による製造はコストの面で電解法よりも有利であ
る。上記から明らかなように、分散性の改善を目的とし
て実施される共沈法又は共電解法に比べ、水酸化インジ
ウム及びメタスズ酸の製造に制限がない。すなわち、一
方では水酸化インジウムの製造において、最も効率が良
く廃水処理等の問題を生じない電解法を採用し、他方メ
タスズ酸の製造は最も効率の良い溶解沈殿法(硝酸溶
解)を使用することができる。そして、これは共沈法等
と同等の分散性をもつ混合スラリーが得られるという優
れた効果を有する。これは、本発明の大きな特徴であ
る。
As described above, although the production method is not particularly limited, ammonium nitrate used as an electrolytic solution in a method for obtaining metastannic acid by an electrolytic method is satisfactory in terms of cost and maintenance of purity. Since metastannic acid, which is a nonconductor, precipitates on the surface, there is a problem that stable and stable electrolysis cannot be performed. Ammonium chloride can also be considered as an electrolytic solution, but metastannic acid does not precipitate in an electrolytic solution containing chlorine, but it is difficult to remove chloride ions from the obtained precipitate, and there is a problem that washing costs increase. Therefore, production by the solution precipitation method is more advantageous than the electrolytic method in terms of cost. As is clear from the above, there is no limitation on the production of indium hydroxide and metastannic acid as compared with the coprecipitation method or the coelectrolysis method performed for the purpose of improving dispersibility. In other words, on the one hand, in the production of indium hydroxide, the most efficient electrolysis method that does not cause problems such as wastewater treatment is adopted, and on the other hand, for the production of metastannic acid, the most efficient dissolution precipitation method (nitric acid dissolution) is used. Can be. This has an excellent effect that a mixed slurry having a dispersibility equivalent to that of the coprecipitation method or the like can be obtained. This is a major feature of the present invention.

【0016】水酸化インジウム及びメタスズ酸の粒子径
は10μm以下であることが望ましい。これは均一性及
び分散性を効果的に高めるからである。水酸化インジウ
ム分散溶液とメタスズ酸分散溶液とを混合したスラリー
のpHは5以上9以下であることが望ましい。pHが5
に満たない場合はメタスズ酸の凝集が生じ、pHが9を
超えると水酸化インジウムの凝集が生じ、いずれの場合
も均一な混合が難しくなるからである。また、良好な分
散状態を短時間に効率的に得るために、ホモジナイザー
を使用してスラリーを混合することが望ましい。さら
に、混合したスラリーの乾燥に噴霧形乾燥装置を用いる
と、極めて短時間に混合スラリーを乾燥させることがで
き、これによって良好なスズの分散性を保ったままで乾
燥粉を得ることができる。
The particle diameter of indium hydroxide and metastannic acid is preferably 10 μm or less. This is because uniformity and dispersibility are effectively improved. It is desirable that the pH of the slurry obtained by mixing the indium hydroxide dispersion solution and the metastannic acid dispersion solution is 5 or more and 9 or less. pH 5
If the pH is less than 1, the aggregation of metastannic acid occurs, and if the pH exceeds 9, aggregation of indium hydroxide occurs, and in any case, uniform mixing becomes difficult. In order to efficiently obtain a good dispersion state in a short time, it is desirable to mix the slurry using a homogenizer. Furthermore, if a spray-type drying apparatus is used for drying the mixed slurry, the mixed slurry can be dried in an extremely short time, and thus a dry powder can be obtained while maintaining good tin dispersibility.

【0017】水酸化インジウムを分散させた分散溶液、
メタスズ酸を分散させた分散溶液、及びこれらを混合し
たスラリーの固形分は、それぞれ10〜80wt%であ
ることが望ましい。10wt%未満では、水分量が多い
ため混合後に乾燥に要する熱量が多くなるためにコスト
面で不利になる。また80wt%を超えるとスラリーの
粘度が高くなるため、攪拌及び取り扱いが困難になるた
めである。
A dispersion solution in which indium hydroxide is dispersed,
The solid content of the dispersion in which metastannic acid is dispersed and the solid content of the slurry in which these are mixed are desirably 10 to 80 wt%. If the content is less than 10 wt%, the amount of heat required for drying after mixing is large due to a large amount of water, which is disadvantageous in cost. On the other hand, if the content exceeds 80% by weight, the viscosity of the slurry becomes high, so that stirring and handling become difficult.

【0018】焙焼、すなわち酸素を含む雰囲気下での熱
処理は、加熱温度700〜1200°C、熱処理時間2
4時間以下で行うことが望ましい。温度700°C未満
では、電解液などから混入した硝酸アンモニウムなどの
塩が十分に揮発しないで残存することがあるからであ
る。また、1200°Cを超える温度又は熱処理時間2
4時間を超える焙焼は、結晶粒の成長が著しく、焼結性
が低下するからである。粗大粒が発生した場合に、焙焼
後に十分な粉砕を行って、その影響を減らす操作を行う
ことも考えられるが、これは生産性を低下させるだけで
なく、粉砕媒体からの不純物の混入が増加するため好ま
しくない。したがって、上記の範囲をするのが良い。特
に、熱処理時間5時間以下がより好適である。
The roasting, that is, the heat treatment in an atmosphere containing oxygen is performed at a heating temperature of 700 to 1200 ° C. for a heat treatment time of 2 hours.
It is desirable to carry out in 4 hours or less. If the temperature is lower than 700 ° C., salts such as ammonium nitrate mixed from the electrolyte or the like may not sufficiently evaporate and remain. In addition, a temperature exceeding 1200 ° C. or a heat treatment time 2
This is because the roasting for more than 4 hours causes remarkable growth of crystal grains and lowers sinterability. When coarse particles are generated, it is conceivable to perform sufficient pulverization after roasting to reduce the effect, but this not only reduces the productivity but also reduces the contamination of impurities from the pulverization medium. It is not preferable because it increases. Therefore, it is better to set the above range. In particular, a heat treatment time of 5 hours or less is more preferable.

【0019】[0019]

【実施例及び比較例】次に、本発明の実施例について説
明する。なお、本実施例はあくまで一例であり、この例
に制限されるものではない。すなわち、本発明の技術思
想の範囲内で、実施例以外の態様あるいは変形を全て包
含するものである。
Examples and Comparative Examples Next, examples of the present invention will be described. This embodiment is merely an example, and the present invention is not limited to this example. That is, all aspects or modifications other than the examples are included within the scope of the technical idea of the present invention.

【0020】(実施例)上記図1に示す製造工程に沿っ
て、上記電解法で製造した固形分が50%の水酸化イン
ジウム分散液と溶解沈殿法により製造した固形分が40
%のメタスズ酸分散液を、酸化物に換算してIn
−10%SnOとなるように混合し、250°Cの熱
風中に噴霧して乾燥した。この乾燥粉を大気中、900
°Cで2時間焙焼して、酸化インジウムと酸化スズの混
合粉を得た。この酸化物混合粉を焙焼による凝集を解く
ために湿式媒体攪拌ミルで平均粒径が1μmになるまで
粉砕した後、造粒を行った。さらにこの造粒粉を用い
て、1t(トン)/cmの圧力でプレス成形を行い5
00×120×8(mm)の成形体とし、酸素雰囲気中
1550°Cの温度で3時間焼結を行いITO焼結体を
得た。
Example In accordance with the manufacturing process shown in FIG. 1, an indium hydroxide dispersion having a solid content of 50% produced by the electrolytic method and a solid content of 40% produced by a solution precipitation method were prepared.
% Of the metastannic acid dispersion is converted to oxides and converted into In 2 O 3
It was mixed so that -10% SnO 2, and dried by spraying in hot air 250 ° C. This dried powder is air
The mixture was roasted at 2 ° C. for 2 hours to obtain a mixed powder of indium oxide and tin oxide. The mixed oxide powder was pulverized by a wet medium stirring mill until the average particle diameter became 1 μm in order to dissolve the aggregation by roasting, and then granulated. Further, using this granulated powder, press molding was performed at a pressure of 1 t (ton) / cm 2 to obtain
A molded body of 00 × 120 × 8 (mm) was sintered at 1550 ° C. for 3 hours in an oxygen atmosphere to obtain an ITO sintered body.

【0021】(比較例)実施例と同じ方法で製造した水
酸化インジウム分散液を250°Cの熱風中に噴霧して
得られた乾燥粉を、900°Cで2時間焙焼して、酸化
インジウムを得た。同様に、実施例と同じ方法で製造し
たメタスズ酸分散液を250°Cの熱風中に噴霧して得
られた乾燥粉を、900°Cで2時間焙焼して、酸化ス
ズ粉を得た。これをIn−10%SnOとなる
ように混合し、焙焼による凝集を解くために湿式媒体攪
拌ミルで平均粒径が1μmになるまで粉砕した後、造粒
を行った。この造粒粉を用いて、実施例と同条件で成
形、焼結を行いITO焼結体を得た。比較例の製造工程
のフローを図2に示す。
(Comparative Example) A dry powder obtained by spraying an indium hydroxide dispersion liquid produced in the same manner as in the example into hot air at 250 ° C. was roasted at 900 ° C. for 2 hours, and oxidized. Indium was obtained. Similarly, a dried powder obtained by spraying a metastannic acid dispersion produced in the same manner as in the example into hot air at 250 ° C. was roasted at 900 ° C. for 2 hours to obtain a tin oxide powder. . This was mixed so as to become In 2 O 3 -10% SnO 2 , pulverized by a wet medium stirring mill until the average particle diameter became 1 μm in order to dissolve the aggregation by roasting, and then granulated. Using this granulated powder, molding and sintering were performed under the same conditions as in the example to obtain an ITO sintered body. FIG. 2 shows the flow of the manufacturing process of the comparative example.

【0022】次に、上記実施例及び比較例で得られた焼
結体をスパッタリングターゲットとして用い、DCマグ
ネトロンスパッタリングし、ノジュールの発生量(被覆
率)を測定した。スパッタリング条件は次の通りであ
る。 スパッタガス : Ar+O スパッタガス圧 : 0.5Pa スパッタガス流量 : 300SCCM 酸素濃度 : 1% 漏洩磁束密度 : 400Gauss 投入パワー : 0.5W/cm スパッタ時間 : 積算電力量100Whr/cm
となるまで放電 ノジュールの発生量(被覆率)の測定結果を表1に示
す。この対比から明らかなように、比較例におけるノジ
ュールの被覆率が70%であったのに対して、本実施例
の焼結体におけるノジュールの被覆率は10%であり、
本発明の著しい効果が確認できた。
Next, using the sintered bodies obtained in the above Examples and Comparative Examples as a sputtering target, DC magnetron sputtering was performed to measure the generation amount (coverage) of nodules. The sputtering conditions are as follows. Sputtering gas: Ar + O 2 Sputtering gas pressure: 0.5 Pa Sputtering gas flow rate: 300 SCCM Oxygen concentration: 1% Leakage magnetic flux density: 400 Gauss Input power: 0.5 W / cm 2 Sputtering time: Integrated power amount 100 Whr / cm 2
Table 1 shows the measurement results of the generation amount (coverage) of the discharge nodules until the value of. As is clear from this comparison, the coverage of nodules in the comparative example was 70%, whereas the coverage of nodules in the sintered body of this example was 10%.
The remarkable effect of the present invention was confirmed.

【0023】[0023]

【表1】 [Table 1]

【0024】[0024]

【発明の効果】スズの分散性を向上させることにより空
孔を減少させ、ITO薄膜形成に好適なノジュール発生
が少ないITO焼結体ターゲットを効率的に製造し、こ
れによって膜の品質の低下や生産性の低下を抑制するこ
とができる優れた効果を有する。
According to the present invention, the porosity is reduced by improving the dispersibility of tin, and an ITO sintered body target with less nodule generation suitable for forming an ITO thin film is efficiently manufactured, whereby the quality of the film is reduced and It has an excellent effect of suppressing a decrease in productivity.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明のスラリー混合による製造工程のフロー
を示す図である。
FIG. 1 is a diagram showing a flow of a manufacturing process by slurry mixing of the present invention.

【図2】比較例の製造工程のフローを示す図である。FIG. 2 is a diagram showing a flow of a manufacturing process of a comparative example.

【図3】従来の製造工程のフローを示す図である。FIG. 3 is a diagram showing a flow of a conventional manufacturing process.

フロントページの続き (72)発明者 中島 光一 茨城県北茨城市華川町臼場187番地4 株 式会社日鉱マテリアルズ磯原工場内 Fターム(参考) 4G030 AA34 AA39 BA02 GA17 4K029 BA45 BA50 BC09 DC05 DC09Continuing on the front page (72) Inventor Koichi Nakajima 187-4 Usuba, Hachikawa-cho, Kitaibaraki-shi, Ibaraki F-term in Nikko Materials Isohara Plant (reference) 4G030 AA34 AA39 BA02 GA17 4K029 BA45 BA50 BC09 DC05 DC09

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】 水酸化インジウムを分散させた分散溶液
とメタスズ酸を分散させた分散溶液を混合して混合分散
溶液とし、この混合分散溶液を乾燥させた後焙焼し、こ
れによって得た酸化物混合粉末の成形体を焼結すること
を特徴とするITOターゲットの製造方法。
1. A mixed solution in which a dispersion solution in which indium hydroxide is dispersed and a dispersion solution in which metastannic acid is dispersed are mixed to form a mixed dispersion solution. The mixed dispersion solution is dried and then roasted. A method for producing an ITO target, comprising sintering a compact of a mixture of powders.
【請求項2】 水酸化インジウムを電解法により製造す
ることを特徴とする請求項1に記載のITOターゲット
の製造方法。
2. The method for producing an ITO target according to claim 1, wherein the indium hydroxide is produced by an electrolytic method.
【請求項3】 メタスズ酸を金属スズの硝酸溶解により
製造することを特徴とする請求項1又は2に記載のIT
Oターゲットの製造方法。
3. The IT according to claim 1, wherein the metastannic acid is produced by dissolving tin metal in nitric acid.
Manufacturing method of O target.
【請求項4】 混合分散溶液の乾燥に噴霧形乾燥装置を
用いることを特徴とする請求項1〜3のそれぞれに記載
のITOターゲットの製造法。
4. The method for producing an ITO target according to claim 1, wherein a spray-type drying apparatus is used for drying the mixed dispersion solution.
【請求項5】 混合分散溶液のpHが5以上9以下であ
ることを特徴とする請求項1〜4のそれぞれに記載のI
TOターゲットの製造方法。
5. The method according to claim 1, wherein the pH of the mixed dispersion is from 5 to 9.
Manufacturing method of TO target.
JP2000120355A 2000-04-21 2000-04-21 ITO target manufacturing method Expired - Lifetime JP4522535B2 (en)

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009203553A (en) * 2008-02-26 2009-09-10 Samsung Corning Precision Glass Co Ltd Zinc-oxide-based sputtering target, manufacturing method therefor, and zinc-oxide-based thin film
KR101117309B1 (en) 2009-06-03 2012-03-20 한양대학교 산학협력단 Method for producing indium tin oxides fine powder
KR101324130B1 (en) * 2007-01-10 2013-11-01 삼성코닝정밀소재 주식회사 Indium tin oxide powder and manufacturing method of producing the same
JP2015017291A (en) * 2013-07-09 2015-01-29 住友金属鉱山株式会社 Method for producing indium hydroxide powder and method for producing indium oxide powder, and sputtering target
JP2015199627A (en) * 2014-04-08 2015-11-12 住友金属鉱山株式会社 Production method of indium hydroxide powder, and production method of indium oxide powder
JP2015199628A (en) * 2014-04-08 2015-11-12 住友金属鉱山株式会社 Method for producing indium hydroxide powder

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001072470A (en) * 1999-08-31 2001-03-21 Sumitomo Metal Mining Co Ltd Production of ito sintered compact

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2736498B2 (en) * 1993-05-26 1998-04-02 株式会社ジャパンエナジー Method for producing indium oxide-tin oxide powder

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001072470A (en) * 1999-08-31 2001-03-21 Sumitomo Metal Mining Co Ltd Production of ito sintered compact

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101324130B1 (en) * 2007-01-10 2013-11-01 삼성코닝정밀소재 주식회사 Indium tin oxide powder and manufacturing method of producing the same
JP2009203553A (en) * 2008-02-26 2009-09-10 Samsung Corning Precision Glass Co Ltd Zinc-oxide-based sputtering target, manufacturing method therefor, and zinc-oxide-based thin film
KR101117309B1 (en) 2009-06-03 2012-03-20 한양대학교 산학협력단 Method for producing indium tin oxides fine powder
JP2015017291A (en) * 2013-07-09 2015-01-29 住友金属鉱山株式会社 Method for producing indium hydroxide powder and method for producing indium oxide powder, and sputtering target
JP2015199627A (en) * 2014-04-08 2015-11-12 住友金属鉱山株式会社 Production method of indium hydroxide powder, and production method of indium oxide powder
JP2015199628A (en) * 2014-04-08 2015-11-12 住友金属鉱山株式会社 Method for producing indium hydroxide powder

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