JP2001298178A - 固体画像センサ用高速ラインダンプ構造 - Google Patents

固体画像センサ用高速ラインダンプ構造

Info

Publication number
JP2001298178A
JP2001298178A JP2001061267A JP2001061267A JP2001298178A JP 2001298178 A JP2001298178 A JP 2001298178A JP 2001061267 A JP2001061267 A JP 2001061267A JP 2001061267 A JP2001061267 A JP 2001061267A JP 2001298178 A JP2001298178 A JP 2001298178A
Authority
JP
Japan
Prior art keywords
charge
dump gate
coupled device
gate
fdg
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001061267A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001298178A5 (enExample
Inventor
Eric Gordon Stevens
ゴードン スティーブンス エリック
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eastman Kodak Co
Original Assignee
Eastman Kodak Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eastman Kodak Co filed Critical Eastman Kodak Co
Publication of JP2001298178A publication Critical patent/JP2001298178A/ja
Publication of JP2001298178A5 publication Critical patent/JP2001298178A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/454—Output structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/158—Charge-coupled device [CCD] image sensors having arrangements for blooming suppression
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2001061267A 2000-03-22 2001-03-06 固体画像センサ用高速ラインダンプ構造 Pending JP2001298178A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/533050 2000-03-22
US09/533,050 US6507056B1 (en) 2000-03-22 2000-03-22 Fast line dump structure for solid state image sensor

Publications (2)

Publication Number Publication Date
JP2001298178A true JP2001298178A (ja) 2001-10-26
JP2001298178A5 JP2001298178A5 (enExample) 2008-04-17

Family

ID=24124251

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001061267A Pending JP2001298178A (ja) 2000-03-22 2001-03-06 固体画像センサ用高速ラインダンプ構造

Country Status (3)

Country Link
US (2) US6507056B1 (enExample)
EP (1) EP1137070B1 (enExample)
JP (1) JP2001298178A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001238134A (ja) * 2000-02-23 2001-08-31 Sony Corp 固体撮像素子およびその駆動方法並びにカメラシステム
US8605187B2 (en) 2009-06-01 2013-12-10 Truesense Imaging, Inc. CCD image sensors having multiple lateral overflow drain regions for a horizontal shift register
US8294802B2 (en) * 2009-10-30 2012-10-23 Truesense Imaging, Inc. CCD image sensors having multiple lateral overflow drain regions for a horizontal shift register
CN104037186B (zh) * 2014-06-25 2017-01-18 中国兵器工业集团第二一四研究所苏州研发中心 一种电荷载流子倍增寄存器的抗光晕结构
CN108258005B (zh) * 2018-01-11 2021-11-16 中国电子科技集团公司第四十四研究所 一种具备快速泄放信号功能的ccd

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06205298A (ja) * 1992-11-06 1994-07-22 Sharp Corp 電荷結合型固体撮像装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4040076A (en) * 1976-07-28 1977-08-02 Rca Corporation Charge transfer skimming and reset circuit
JPS5721878A (en) * 1980-07-15 1982-02-04 Nec Corp Solid state image pickp device and driving method therefor
US4611140A (en) 1985-08-26 1986-09-09 The United States Of America As Represented By The Secretary Of The Navy Saw-CTD parallel to serial imager
US5121214A (en) 1990-06-29 1992-06-09 The United States Of America As Represented By The United States Department Of Energy Method for eliminating artifacts in CCD imagers
JP3120465B2 (ja) * 1991-04-15 2000-12-25 ソニー株式会社 固体撮像素子
WO1992021151A2 (en) 1991-05-10 1992-11-26 Q-Dot, Inc. HIGH-SPEED PERISTALTIC CCD IMAGER WITH GaAs FET OUTPUT
US5355165A (en) 1992-08-06 1994-10-11 Princeton Scientific Instruments, Inc. Very high frame rate CCD imager
US5343297A (en) 1992-09-17 1994-08-30 General Electric Company Charge amplifier with precise, integer gain
KR100306305B1 (ko) * 1993-04-20 2001-12-15 이데이 노부유끼 고체촬상소자및방법
US5440343A (en) 1994-02-28 1995-08-08 Eastman Kodak Company Motion/still electronic image sensing apparatus
US5668597A (en) 1994-12-30 1997-09-16 Eastman Kodak Company Electronic camera with rapid automatic focus of an image upon a progressive scan image sensor
US5514886A (en) * 1995-01-18 1996-05-07 Eastman Kodak Company Image sensor with improved output region for superior charge transfer characteristics
EP0756759B1 (en) * 1995-02-21 2004-04-14 Dalsa Corporation Charge-coupled imaging device
US5990953A (en) * 1995-12-15 1999-11-23 Nec Corporation Solid state imaging device having overflow drain region provided in parallel to CCD shift register

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06205298A (ja) * 1992-11-06 1994-07-22 Sharp Corp 電荷結合型固体撮像装置

Also Published As

Publication number Publication date
EP1137070A3 (en) 2005-06-15
US6507056B1 (en) 2003-01-14
US20030067019A1 (en) 2003-04-10
US6649442B2 (en) 2003-11-18
EP1137070B1 (en) 2014-06-04
EP1137070A2 (en) 2001-09-26

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