JP2001287154A - 研磨装置および研磨方法 - Google Patents
研磨装置および研磨方法Info
- Publication number
- JP2001287154A JP2001287154A JP2000104579A JP2000104579A JP2001287154A JP 2001287154 A JP2001287154 A JP 2001287154A JP 2000104579 A JP2000104579 A JP 2000104579A JP 2000104579 A JP2000104579 A JP 2000104579A JP 2001287154 A JP2001287154 A JP 2001287154A
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- slurry
- slurry supply
- wafer
- flow rate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 125
- 238000000034 method Methods 0.000 title claims description 14
- 239000002002 slurry Substances 0.000 claims abstract description 103
- 230000007246 mechanism Effects 0.000 claims abstract description 41
- 239000004065 semiconductor Substances 0.000 claims abstract description 29
- 235000012431 wafers Nutrition 0.000 abstract 5
- 238000012986 modification Methods 0.000 description 8
- 230000004048 modification Effects 0.000 description 8
- 238000003825 pressing Methods 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229920005830 Polyurethane Foam Polymers 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011496 polyurethane foam Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000104579A JP2001287154A (ja) | 2000-04-06 | 2000-04-06 | 研磨装置および研磨方法 |
US09/825,174 US20020022440A1 (en) | 2000-04-06 | 2001-04-03 | Supply of controlled amount of polishing slurry to semiconductor wafers |
KR1020010018052A KR20010098453A (ko) | 2000-04-06 | 2001-04-04 | 반도체웨이퍼의 연마방법 및 그 장치 |
CN01110439A CN1316768A (zh) | 2000-04-06 | 2001-04-06 | 半导体晶片抛光浆料供应量的控制 |
GB0108751A GB2363350A (en) | 2000-04-06 | 2001-04-06 | Slurry feed for wafer polishing |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000104579A JP2001287154A (ja) | 2000-04-06 | 2000-04-06 | 研磨装置および研磨方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2001287154A true JP2001287154A (ja) | 2001-10-16 |
Family
ID=18618096
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000104579A Pending JP2001287154A (ja) | 2000-04-06 | 2000-04-06 | 研磨装置および研磨方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20020022440A1 (zh) |
JP (1) | JP2001287154A (zh) |
KR (1) | KR20010098453A (zh) |
CN (1) | CN1316768A (zh) |
GB (1) | GB2363350A (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010240752A (ja) * | 2009-04-01 | 2010-10-28 | Ebara Corp | 研磨装置及び研磨方法 |
JP2015061739A (ja) * | 2013-10-31 | 2015-04-02 | 株式会社荏原製作所 | 研磨方法及び研磨装置 |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6722943B2 (en) * | 2001-08-24 | 2004-04-20 | Micron Technology, Inc. | Planarizing machines and methods for dispensing planarizing solutions in the processing of microelectronic workpieces |
US6953391B1 (en) * | 2002-03-30 | 2005-10-11 | Lam Research Corporation | Methods for reducing slurry usage in a linear chemical mechanical planarization system |
US20040214508A1 (en) * | 2002-06-28 | 2004-10-28 | Lam Research Corporation | Apparatus and method for controlling film thickness in a chemical mechanical planarization system |
CN1305115C (zh) * | 2002-09-29 | 2007-03-14 | 台湾积体电路制造股份有限公司 | 利用复合控制模式的研浆流量控制方法及系统 |
US6884152B2 (en) | 2003-02-11 | 2005-04-26 | Micron Technology, Inc. | Apparatuses and methods for conditioning polishing pads used in polishing micro-device workpieces |
US20040162007A1 (en) * | 2003-02-19 | 2004-08-19 | Ky Phan | Chemical mechanical polishing atomizing rinse system |
US6872128B1 (en) * | 2003-09-30 | 2005-03-29 | Lam Research Corporation | System, method and apparatus for applying liquid to a CMP polishing pad |
US6929533B2 (en) * | 2003-10-08 | 2005-08-16 | Taiwan Semiconductor Manufacturing Co., Ltd | Methods for enhancing within-wafer CMP uniformity |
JP2005262406A (ja) * | 2004-03-19 | 2005-09-29 | Toshiba Corp | 研磨装置および半導体装置の製造方法 |
US7770535B2 (en) * | 2005-06-10 | 2010-08-10 | Semiconductor Energy Laboratory Co., Ltd. | Chemical solution application apparatus and chemical solution application method |
KR102333209B1 (ko) * | 2015-04-28 | 2021-12-01 | 삼성디스플레이 주식회사 | 기판 연마 장치 |
KR102493016B1 (ko) * | 2015-12-31 | 2023-01-31 | 주식회사 케이씨텍 | 화학 기계적 연마장치 및 그 제어방법 |
JP7116371B2 (ja) * | 2019-04-01 | 2022-08-10 | 株式会社村田製作所 | 研磨剤供給装置、研磨装置及び研磨剤供給方法 |
KR20210081898A (ko) * | 2019-12-24 | 2021-07-02 | 에스케이하이닉스 주식회사 | 화학적 기계적 연마 장비 및 그 구동 방법 |
CN115890456A (zh) * | 2022-12-29 | 2023-04-04 | 西安奕斯伟材料科技有限公司 | 抛光液提供装置、抛光设备和抛光方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3334139B2 (ja) * | 1991-07-01 | 2002-10-15 | ソニー株式会社 | 研磨装置 |
US5554064A (en) * | 1993-08-06 | 1996-09-10 | Intel Corporation | Orbital motion chemical-mechanical polishing apparatus and method of fabrication |
JP3734289B2 (ja) * | 1995-01-24 | 2006-01-11 | 株式会社荏原製作所 | ポリッシング装置 |
US6139406A (en) * | 1997-06-24 | 2000-10-31 | Applied Materials, Inc. | Combined slurry dispenser and rinse arm and method of operation |
US5816900A (en) * | 1997-07-17 | 1998-10-06 | Lsi Logic Corporation | Apparatus for polishing a substrate at radially varying polish rates |
EP1095734B1 (en) * | 1997-12-26 | 2009-10-07 | Ebara Corporation | Polishing machine |
US6429131B2 (en) * | 1999-03-18 | 2002-08-06 | Infineon Technologies Ag | CMP uniformity |
-
2000
- 2000-04-06 JP JP2000104579A patent/JP2001287154A/ja active Pending
-
2001
- 2001-04-03 US US09/825,174 patent/US20020022440A1/en not_active Abandoned
- 2001-04-04 KR KR1020010018052A patent/KR20010098453A/ko not_active Application Discontinuation
- 2001-04-06 GB GB0108751A patent/GB2363350A/en not_active Withdrawn
- 2001-04-06 CN CN01110439A patent/CN1316768A/zh active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010240752A (ja) * | 2009-04-01 | 2010-10-28 | Ebara Corp | 研磨装置及び研磨方法 |
JP2015061739A (ja) * | 2013-10-31 | 2015-04-02 | 株式会社荏原製作所 | 研磨方法及び研磨装置 |
Also Published As
Publication number | Publication date |
---|---|
US20020022440A1 (en) | 2002-02-21 |
KR20010098453A (ko) | 2001-11-08 |
CN1316768A (zh) | 2001-10-10 |
GB0108751D0 (en) | 2001-05-30 |
GB2363350A (en) | 2001-12-19 |
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Legal Events
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A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070313 |
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