JP2001287154A - Polisher and polishing method - Google Patents
Polisher and polishing methodInfo
- Publication number
- JP2001287154A JP2001287154A JP2000104579A JP2000104579A JP2001287154A JP 2001287154 A JP2001287154 A JP 2001287154A JP 2000104579 A JP2000104579 A JP 2000104579A JP 2000104579 A JP2000104579 A JP 2000104579A JP 2001287154 A JP2001287154 A JP 2001287154A
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- slurry
- slurry supply
- wafer
- flow rate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 125
- 238000000034 method Methods 0.000 title claims description 14
- 239000002002 slurry Substances 0.000 claims abstract description 103
- 230000007246 mechanism Effects 0.000 claims abstract description 41
- 239000004065 semiconductor Substances 0.000 claims abstract description 29
- 235000012431 wafers Nutrition 0.000 abstract 5
- 238000012986 modification Methods 0.000 description 8
- 230000004048 modification Effects 0.000 description 8
- 238000003825 pressing Methods 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229920005830 Polyurethane Foam Polymers 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011496 polyurethane foam Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体ウェハの面
を研磨し平坦化する半導体ウェハの研磨装置および研磨
方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor wafer polishing apparatus and method for polishing and flattening a surface of a semiconductor wafer.
【０００２】[0002]
【従来の技術】通常、半導体装置の集積回路基板の製造
工程の一つとして層間絶縁膜や配線膜などの平坦化プロ
セスがある。この平坦化プロセスでは、ＣＭＰ（Ｃｈｅ
ｍｉｃａｌ Ｍｅｃｈａｎｉｃａｌ Ｐｏｌｉｓｈｉｎ
ｇ）と呼ばれる化学機械研磨法という技術が用いられて
いる。2. Description of the Related Art Normally, as one of the manufacturing steps of an integrated circuit substrate of a semiconductor device, there is a flattening process of an interlayer insulating film, a wiring film, and the like. In this planarization process, CMP (Che)
mechanical Mechanical Polish
A technique called chemical mechanical polishing called g) is used.
【０００３】また、半導体集積回路のデザインル−ルの
縮小化に伴い回路パタ−ンが微細化し、露光装置の高い
解像度が要求される。しかし露光装置の解像度が高くな
ると、焦点深度か浅くなる。このため、回路パタ−ンを
解像度良く半導体ウェハに転写するには、表面に凹凸の
ない平坦にしなければならかった。Further, as the design rules of a semiconductor integrated circuit are reduced, the circuit pattern becomes finer, and a higher resolution of an exposure apparatus is required. However, as the resolution of the exposure apparatus increases, the depth of focus decreases. For this reason, in order to transfer a circuit pattern onto a semiconductor wafer with high resolution, the surface must be flat without any irregularities.
【０００４】この平坦化工程に用いられるＣＭＰである
研磨装置よる研磨方法は、剛性の高い研磨定盤に発泡ポ
リウレタンの研磨パッドを貼り付け、半導体ウェハをウ
ェハ保持ヘッドで保持し、半導体ウェハを研磨パッド面
に押し付け一方向に回転し、研磨パッド面に研磨スラリ
−を滴下しながら研磨していた。A polishing method using a polishing apparatus, which is a CMP used in the flattening step, is a method in which a polishing pad made of polyurethane foam is adhered to a highly rigid polishing plate, the semiconductor wafer is held by a wafer holding head, and the semiconductor wafer is polished. Polishing was performed while pressing against the pad surface, rotating in one direction, and dropping polishing slurry onto the polishing pad surface.
【０００５】しかしながら、一つのスラリ−供給ノズル
で研磨パッドの半径方向のほぼ中央付近に研磨スラリ−
を滴下しても、研磨スラリ−が半導体ウェハの全面に行
き渡らず、半導体ウェハ面内を均一に研磨できない。ま
た、研磨スラリ−を半導体ウェハ面に一様に行き渡らす
ためには、過剰に研磨スラリ−を供給すれば良いが、研
磨スラリ−の消耗が大きくコスト的に得策な方法ではな
い。[0005] However, one slurry supply nozzle is used to polish the polishing slurry almost at the center in the radial direction of the polishing pad.
The polishing slurry does not spread over the entire surface of the semiconductor wafer even if it is dropped, and the semiconductor wafer cannot be uniformly polished. Further, in order to spread the polishing slurry evenly on the semiconductor wafer surface, it is sufficient to supply the polishing slurry excessively, but the polishing slurry is consumed so much that it is not a cost-effective method.
【０００６】この問題を解消する研磨装置および方法
は、特開平１１−７０４６５号公報に開示されている。
この研磨装置は、研磨パッドの半径方向に複数の開口を
並べて配置されたスプレ−手段を備えている。そして、
このスプレ−手段により飛沫あるいは噴霧の状態で研磨
スラリ−を開口から研磨パッドの半径方向の全面に吹き
付け、研磨パッドの微小な穴に研磨スラリ−入れ押し出
すように供給し、半導体ウェハの研磨速度を落として均
一に研磨することを特徴としている。A polishing apparatus and a method for solving this problem are disclosed in Japanese Patent Application Laid-Open No. H11-70465.
This polishing apparatus includes spray means in which a plurality of openings are arranged in a radial direction of a polishing pad. And
By this spraying means, a polishing slurry is sprayed in a spray or spray state from the opening to the entire surface of the polishing pad in the radial direction, and the slurry is supplied so as to be pushed into a minute hole of the polishing pad and pushed out. It is characterized by dropping and polishing uniformly.
【０００７】[0007]
【発明が解決しようとする課題】しかしながら上述した
研磨装置では、研磨パッド面に研磨スラリ−を一様に供
給されるものの、半導体ウェハの中心部と端部との接触
時間が異なるため、半導体ウェハに対して一様に研磨ス
ラリ−を供給しても研磨量を均一にすることが難しいと
いう問題がある。However, in the above-described polishing apparatus, although the polishing slurry is uniformly supplied to the polishing pad surface, the contact time between the center and the end of the semiconductor wafer is different. However, there is a problem that it is difficult to make the polishing amount uniform even if the polishing slurry is supplied uniformly.
【０００８】従って、本発明の目的は、研磨スラリ−の
消耗を抑制し半導体ウェハの面内を均一に研磨できる研
磨装置および研磨方法を提供することにある。SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a polishing apparatus and a polishing method capable of suppressing the consumption of a polishing slurry and uniformly polishing the surface of a semiconductor wafer.
【０００９】[0009]
【課題を解決するための手段】本発明の第１の特徴は、
一方向に回転する研磨定盤に貼り付けられた研磨パッド
と、半導体ウェハを保持し前記研磨パッド面に押し付け
一方向に回転する少なくとも一つのウェハ保持ヘッドを
備える研磨装置において、前記半導体ウェハの端部と中
心部との中間部と前記半導体ウェハの中心部とのそれぞ
れに供給する研磨スラリ−の流量を制御する少なくとも
一つのスラリ−供給機構を備える研磨装置である。A first feature of the present invention is as follows.
In a polishing apparatus comprising: a polishing pad attached to a polishing platen rotating in one direction; and at least one wafer holding head for holding a semiconductor wafer and pressing against the polishing pad surface and rotating in one direction, an end of the semiconductor wafer. A polishing apparatus comprising at least one slurry supply mechanism for controlling a flow rate of a polishing slurry supplied to an intermediate portion between a portion and a central portion and a central portion of the semiconductor wafer.
【００１０】また、第１のスラリ−供給機構の特徴は、
前記研磨パッドの半径方向に並べ配置されるとともに前
記半導体ウェハの端部と中心部との中間部に対応する一
対の第１のスラリ−供給ノズルと、該一対の第１のスラ
リ−供給ノズルの間に有って前記半導体ウェハの中心部
に対応する第２のスラリ−供給ノズルと、前記一対の第
１のスラリ−供給ノズルと前記第２のスラリ−供給ノズ
ルに独立して前記研磨スラリ−の流量を供給する流量可
変手段とを備えることである。なお、前記流量可変手段
は、ポンプであることが望ましい。The first slurry supply mechanism has the following features.
A pair of first slurry supply nozzles arranged in the radial direction of the polishing pad and corresponding to an intermediate portion between an end portion and a center portion of the semiconductor wafer; and a pair of first slurry supply nozzles. A second slurry supply nozzle interposed therebetween and corresponding to the center of the semiconductor wafer; and the polishing slurry independently of the pair of first slurry supply nozzle and the second slurry supply nozzle. And a flow rate varying means for supplying the flow rate. Preferably, the flow rate changing means is a pump.
【００１１】第２のスラリ−供給機構の特徴は、前記研
磨パッドの半径方向の任意の位置に第３のスラリ−供給
ノズルを固定できる固定手段を備えている。また、第３
の前記スラリ−供給機構の特徴は、研磨パッドの半径方
向に前記第３のスラリ−供給ノズルを移動させる移動位
置決め機構を備えるている。さらに、前記第２のスラリ
−供給機構および前記第３のスラリ−供給機構は、第３
のスラリ−供給ノズルを一つか二つを有することが望ま
しい。A feature of the second slurry supply mechanism is that it has a fixing means for fixing the third slurry supply nozzle at an arbitrary position in the radial direction of the polishing pad. Also, the third
The feature of the slurry supply mechanism is that the slurry supply mechanism includes a movement positioning mechanism for moving the third slurry supply nozzle in a radial direction of the polishing pad. Further, the second slurry supply mechanism and the third slurry supply mechanism may include a third slurry supply mechanism.
It is desirable to have one or two slurry supply nozzles.
【００１２】本発明の第２の特徴は、一方向に回転する
研磨定盤に貼り付けられた研磨パッドと、半導体ウェハ
を保持し前記研磨パッド面に押し付け一方向に回転する
少なくとも一つのウェハ保持ヘッドと、前記半導体ウェ
ハの端部と中心部との中間部と前記半導体ウェハの中心
部とのそれぞれに供給する研磨スラリ−の流量を制御す
る少なくとも一つのスラリ−供給機構を備える研磨装置
において、前記半導体ウェハの端部と中心部との間の中
間部への前記研磨スラリ−の流量を前記中心部への流量
より多くする研磨方法である。A second feature of the present invention is that a polishing pad is attached to a polishing platen that rotates in one direction, and at least one wafer holder that holds a semiconductor wafer and presses against the surface of the polishing pad to rotate in one direction. A polishing apparatus comprising at least one slurry supply mechanism for controlling a flow rate of a polishing slurry supplied to a head, an intermediate portion between an end portion and a central portion of the semiconductor wafer, and a central portion of the semiconductor wafer, A polishing method wherein a flow rate of the polishing slurry to an intermediate portion between an end portion and a center portion of the semiconductor wafer is larger than a flow rate to the center portion.
【００１３】[0013]
【発明の実施の形態】次に、本発明について図面を参照
して説明する。Next, the present invention will be described with reference to the drawings.
【００１４】図１（ａ）および（ｂ）は本発明の一実施
の形態における研磨装置を示す上面図および側面図であ
る。この研磨装置は、図１に示すように、矢印で示す方
向に回転する研磨定盤５に貼り付けられた研磨パッド２
と、ウェハ２１を保持し研磨パッド２の面に押し付け矢
印の方向に回転するウェハ保持ヘッド３と、ウェハ２１
の端部と中心部との中間部とウェハ２１の中心部とのそ
れぞれに供給する研磨スラリ−の流量を制御するスラリ
−供給機構１を備えている。FIGS. 1A and 1B are a top view and a side view showing a polishing apparatus according to an embodiment of the present invention. As shown in FIG. 1, the polishing apparatus includes a polishing pad 2 attached to a polishing platen 5 which rotates in a direction indicated by an arrow.
A wafer holding head 3 holding the wafer 21 and pressing the surface of the polishing pad 2 and rotating in the direction of the arrow;
A slurry supply mechanism 1 for controlling the flow rate of the polishing slurry supplied to each of the intermediate portion between the end portion and the central portion and the central portion of the wafer 21.
【００１５】また、スラリ−供給機構１は、研磨パッド
２の半径方向差し渡したスリ−ブ管６に並べ配置される
とともにウェハ２１の端部と中心部との中間部に対応す
る一対のスラリ−供給用のノズル４ａと、一対のスラリ
−供給用のノズル４ａの間に有ってウェハ２１の中心部
に対応するスラリ−供給用のノズル４ｂと、一対のスラ
リ−供給用のノズル４ａとスラリ−供給用のノズル４ｂ
とのそれぞれに独立して研磨スラリ−の流量を供給する
ポンプ７と、それぞれのポンプ７に研磨スラリ−が圧送
される供給源８とを備えている。A slurry supply mechanism 1 is arranged side by side on a sleeve pipe 6 which extends radially across the polishing pad 2 and has a pair of slurry corresponding to an intermediate portion between an end portion and a center portion of the wafer 21. A supply nozzle 4a, a slurry supply nozzle 4b corresponding to the center of the wafer 21 between the pair of slurry supply nozzles 4a, and a pair of slurry supply nozzles 4a; Nozzle 4b for supply
And a supply source 8 for pumping the polishing slurry to each pump 7 independently.
【００１６】すなわち、三つのノズル４ａおよび４ｂの
研磨スラリ−の滴下量（流量）は、それぞれのポンプ７
の回転数で設定される。ポンプ７の回転数の制御の代わ
りに、例えば、スリ−ブ管６に導入される３本の送液管
のそれぞれに流量調節弁を設けても良いが、研磨スラリ
−が流量調節弁の開口を詰まらせるので、ポンプ７の回
転数で制御することが望ましい。That is, the drop amount (flow rate) of the polishing slurry of the three nozzles 4a and 4b is controlled by the pump 7
Is set by the number of rotations. Instead of controlling the number of revolutions of the pump 7, for example, a flow control valve may be provided in each of the three liquid feed pipes introduced into the sleeve pipe 6, but the polishing slurry is used to open the flow control valve. Therefore, it is desirable to control the rotation speed of the pump 7.
【００１７】図２はノズルからの研磨スラリ−の滴下量
を変えて研磨した場合のウェハ面内の均一度を示す図で
ある。ちなみに、従来のように、ウェハの中心が最も研
磨スラリ−の供給量を多くした場合、すなわち、図１の
ノズル４ｂの研磨スラリ−の滴下量を他のノズル４ｂよ
り多くした場合と、他の場合は、ウェハの中間部に対応
するノズル４ａの研磨スラリ−の滴下量をウェハの中心
に対応するノズル４ｂの滴下量より多くした場合で、ウ
ェハのタングステン膜を研磨してみた。FIG. 2 is a view showing the uniformity in the wafer surface when polishing is performed by changing the amount of the polishing slurry dropped from the nozzle. Incidentally, as in the prior art, when the supply amount of the polishing slurry is the largest at the center of the wafer, that is, when the drop amount of the polishing slurry of the nozzle 4b in FIG. In this case, the tungsten film on the wafer was polished when the amount of the polishing slurry dropped from the nozzle 4a corresponding to the intermediate portion of the wafer was larger than the amount of the slurry 4 dropped corresponding to the center of the wafer.
【００１８】その結果、図２に示すように、ウェハの中
心に多く研磨スラリ−を滴下した場合は、ウェハの中心
部とウェハの端部との研磨量との研磨量の差が大きい
が、ウエハの中間部に研磨スラリ−を多く滴下した場合
は、その差が少なくなることがわかった。As a result, as shown in FIG. 2, when a large amount of polishing slurry is dropped on the center of the wafer, the difference in the amount of polishing between the center of the wafer and the edge of the wafer is large. It was found that when a large amount of the polishing slurry was dropped on the intermediate portion of the wafer, the difference became small.
【００１９】なお、ウェハの部分的の研磨量、すなわ
ち、図２の研磨均一度の評価は、四端子抵抗測定法によ
りウェハの各部分のシリ−ズ抵抗を測定し、研磨された
タングステン膜の厚みにパソコンで換算し求めディスプ
レイで表示しててみた。この方法は簡単なのでモニタと
して以下の評価に用いることした。The evaluation of the amount of partial polishing of the wafer, that is, the uniformity of polishing shown in FIG. 2 is performed by measuring the series resistance of each part of the wafer by a four-terminal resistance measuring method and measuring the polished tungsten film. I converted the thickness to a personal computer and displayed it on a display. Since this method was simple, it was used as a monitor for the following evaluation.
【００２０】図３はスラリ−供給機構の第１の変形例を
示す図である。このスラリ−供給機構は、図３に示すよ
うに、ガイドバ−１１で案内されるブロック９に取り付
けられたノズル４ｃが研磨パッドの半径方向の任意の位
置に固定することができる。また、ノズル４ｃとブロッ
ク９介して連結されるフレキシブルチュ−ブ１３は、ブ
ロック９の移動に支障のないように、ブラケット１０に
取付けられたガイドバ−１１に螺旋状に巻き付けられて
いる。FIG. 3 is a view showing a first modification of the slurry supply mechanism. In this slurry supply mechanism, as shown in FIG. 3, the nozzle 4c attached to the block 9 guided by the guide bar 11 can be fixed at an arbitrary position in the radial direction of the polishing pad. The flexible tube 13 connected to the nozzle 4c via the block 9 is spirally wound around a guide bar 11 attached to the bracket 10 so as not to hinder the movement of the block 9.
【００２１】このスラリ−供給機構、研磨スラリ−の消
耗を少なくするためになされたものである。例えば、ウ
ェハの膜質が研磨し易い場合やウェハに転写されたパタ
−ン密度が低い場合は、一つのノズル４ｃで済む。そし
て、研磨度が均一になるようにノズル４ｃの位置を任意
に位置決め、ノズルの固定手段であるロックネジ１２で
ブロックをガイドバ−１１に固定する。そして、研磨を
開始したら、研磨スラリ−２２を研磨パッド２に滴下す
る。The slurry supply mechanism and the polishing slurry are used to reduce the consumption of the slurry. For example, when the film quality of the wafer is easily polished or when the pattern density transferred to the wafer is low, only one nozzle 4c is required. Then, the position of the nozzle 4c is arbitrarily determined so that the degree of polishing becomes uniform, and the block is fixed to the guide bar 11 by a lock screw 12 which is a nozzle fixing means. When the polishing is started, the polishing slurry 22 is dropped on the polishing pad 2.
【００２２】図４は図３のスラリ−供給機構の変形例を
示す図である。このスラリ−供給機構は、図４に示すよ
うに、ノズル４ｃが研磨中でも研磨パッドの半径方向に
移動できるように、ノズル４ｃを取り付けるブロック９
にナットを内蔵させ、このナットに噛み合う送りねじ１
４と、ブラケット１０ａに取付けられた送りねじ１４を
回転させるパルスモ−タ１５を備える移動位置決め機構
を設けたことである。FIG. 4 is a view showing a modification of the slurry supply mechanism of FIG. As shown in FIG. 4, the slurry supply mechanism includes a block 9 for mounting the nozzle 4c so that the nozzle 4c can move in the radial direction of the polishing pad even during polishing.
A feed screw 1 with a built-in nut
4 and a moving positioning mechanism having a pulse motor 15 for rotating a feed screw 14 attached to the bracket 10a.
【００２３】図５はスラリ−供給機構の第２の変形例を
示す図である。このスラリ−供給機構は、図５に示すよ
うに、二つノズル４ｃと４ｄとを設け、それぞれの位置
を任意に変えることができるようにしたことである。ノ
ズル４ｃを取り付けるブロック９ａとノズル４ｄを取り
付けるブロック９ｂとは、同一のガイドバ−１１に摺動
し得るようにし、任意の位置で固定手段であるロックネ
ジ１２によってガイドば−１１に固定される。FIG. 5 is a view showing a second modification of the slurry supply mechanism. As shown in FIG. 5, the slurry supply mechanism has two nozzles 4c and 4d so that the positions of the nozzles can be arbitrarily changed. The block 9a for mounting the nozzle 4c and the block 9b for mounting the nozzle 4d can slide on the same guide bar 11, and are fixed to the guide bar -11 at an arbitrary position by a lock screw 12 as a fixing means.
【００２４】図６は図５のスラリ−供給機構の変形例を
示す図である。このスラリ−供給機構は、図６に示すよ
うに、二つのノズル４cおよび４ｄが研磨中に任意の位
置に位置決めできるようにしたことである。FIG. 6 is a view showing a modification of the slurry supply mechanism of FIG. This slurry supply mechanism is such that, as shown in FIG. 6, the two nozzles 4c and 4d can be positioned at arbitrary positions during polishing.
【００２５】このスラリ−供給機構は、ノズル４ｃおよ
びノズル４ｄをそれぞれを取り付けるブロック９ｃとブ
ロック９ｄにナットを内蔵させ、これら二つのナットの
それぞれに噛み合う２本の送りねじ１４と、これら送り
ねじ１４を独立して回転させるパルスモ−タ１５ａおよ
びパルスモ−タ１５ｂとを備える移動位置決め機構を設
けている。This slurry supply mechanism has two nuts built in the blocks 9c and 9d for mounting the nozzles 4c and 4d, respectively, and two feed screws 14 meshing with these two nuts, respectively. And a moving positioning mechanism including a pulse motor 15a and a pulse motor 15b for independently rotating the motor.
【００２６】また、このスラリ−供給機構は、種々の研
磨モ−ドに対して、二つのノズル４ｃと４ｄの位置プロ
グラムとポンプの吐出量プログラムを適宜組合せれば、
ウェハ面内を均一に研磨することができる。This slurry supply mechanism can be obtained by appropriately combining the position program of the two nozzles 4c and 4d and the discharge amount program of the pump for various polishing modes.
The inside of the wafer surface can be uniformly polished.
【００２７】なお、いままでの説明では、一つのウェハ
保持ヘッドと一つスラリ−供給機構で説明してきたが、
二つのウェハ保持ヘッドと二つのスラリ−供給機構でも
本発明は適用できる。In the above description, one wafer holding head and one slurry supply mechanism have been described.
The present invention can be applied to two wafer holding heads and two slurry supply mechanisms.
【００２８】[0028]
【発明の効果】以上説明したように本発明は、研磨パッ
ドの半径方向に１乃至複数の研磨スラリ−ノズルを配置
し、ウェハ面内に対応する研磨パッドに供給する研磨ス
ラリ−の流量を制御することによってウェハ面内を均一
に研磨できる。このことによって解像度の良いパタ−ン
がウェハに転写できるという効果がある。As described above, according to the present invention, one or a plurality of polishing slurry nozzles are arranged in the radial direction of a polishing pad to control the flow rate of the polishing slurry supplied to the corresponding polishing pad in the wafer surface. By doing so, the wafer surface can be uniformly polished. This has the effect that a pattern with good resolution can be transferred to the wafer.
【００２９】また、位置が固定された一つの研磨スラリ
−ノズルで過剰に研磨スラリ−を供給する必要が無く、
研磨スラリ−ノズルの位置や数および研磨スラリ−流量
を制御することによって研磨できるので、研磨スラリ−
を無駄にすること無く、コストの低減ができるという効
果がある。Further, it is not necessary to supply an excessive amount of polishing slurry with one polishing slurry nozzle having a fixed position.
Polishing can be performed by controlling the position and number of the polishing slurry nozzles and the flow rate of the polishing slurry.
There is an effect that cost can be reduced without wasting time.
【図１】本発明の一実施の形態における研磨装置を示す
上面図および側面図である。FIG. 1 is a top view and a side view showing a polishing apparatus according to an embodiment of the present invention.
【図２】ノズルからの研磨スラリ−の滴下量を変えて研
磨した場合のウェハ面内の均一度を示す図である。FIG. 2 is a diagram showing the uniformity in a wafer surface when polishing is performed while changing the amount of polishing slurry dropped from a nozzle.
【図３】スラリ−供給機構の第１の変形例を示す図であ
る。FIG. 3 is a diagram showing a first modification of the slurry supply mechanism.
【図４】図３のスラリ−供給機構の変形例を示す図であ
る。FIG. 4 is a view showing a modification of the slurry supply mechanism of FIG. 3;
【図５】スラリ−供給機構の第２の変形例を示す図であ
る。FIG. 5 is a view showing a second modification of the slurry supply mechanism.
【図６】図５のスラリ−供給機構の変形例を示す図であ
る。FIG. 6 is a view showing a modification of the slurry supply mechanism of FIG. 5;
１ スラリ−供給機構 ２ 研磨パッド ３ ウェハ保持ヘッド ４ａ，４ｂ，４ｃ，４ｄ ノズル ５ 研磨定盤 ６ スリ−ブ管 ７ ポンプ ８ 供給源 ９，９ａ，９ｂ ブロック １０，１０ａ ブラケット １１ ガイドバ− １２ ロックネジ １３ フレキシブルチュ−ブ １４ 送りねじ １５，１５ａ，１５ｂ パルスモ−タ ２１ ウェハ ２２ 研磨スラリ− Reference Signs List 1 slurry supply mechanism 2 polishing pad 3 wafer holding head 4a, 4b, 4c, 4d nozzle 5 polishing platen 6 sleeve tube 7 pump 8 supply source 9, 9a, 9b block 10, 10a bracket 11, guide bar 12, lock screw 13 Flexible tube 14 Feed screw 15, 15a, 15b Pulse motor 21 Wafer 22 Polishing slurry
Claims (8)
れた研磨パッドと、半導体ウェハを保持し前記研磨パッ
ド面に押し付け一方向に回転する少なくとも一つのウェ
ハ保持ヘッドを備える研磨装置において、前記半導体ウ
ェハの端部と中心部との中間部と前記半導体ウェハの中
心部とのそれぞれに供給する研磨スラリ−の流量を制御
する少なくとも一つのスラリ−供給機構を備えることを
特徴とする研磨装置。1. A polishing apparatus comprising: a polishing pad attached to a polishing platen that rotates in one direction; and at least one wafer holding head that holds a semiconductor wafer and presses against the surface of the polishing pad to rotate in one direction. A polishing apparatus comprising at least one slurry supply mechanism for controlling a flow rate of a polishing slurry supplied to an intermediate portion between an end portion and a central portion of the semiconductor wafer and a central portion of the semiconductor wafer. .
ドの半径方向に並べ配置されるとともに前記半導体ウェ
ハの端部と中心部との中間部に対応する一対の第１のス
ラリ−供給ノズルと、該一対の第１のスラリ−供給ノズ
ルの間に有って前記半導体ウェハの中心部に対応する第
２のスラリ−供給ノズルと、前記一対の第１のスラリ−
供給ノズルと前記第２のスラリ−供給ノズルに独立して
前記研磨スラリ−の流量を供給する流量可変手段とを備
えることを特徴とする請求項１記載の研磨装置。2. A slurry supply mechanism, comprising: a pair of first slurry supply nozzles arranged in a radial direction of the polishing pad and corresponding to an intermediate portion between an end portion and a center portion of the semiconductor wafer; A second slurry supply nozzle located between the pair of first slurry supply nozzles and corresponding to the center of the semiconductor wafer; and a pair of the first slurry supply nozzles.
2. The polishing apparatus according to claim 1, further comprising a flow rate variable means for supplying a flow rate of said polishing slurry independently of said supply nozzle and said second slurry supply nozzle.
を特徴とする請求項２記載の研磨装置。3. The polishing apparatus according to claim 2, wherein said flow rate changing means is a pump.
ドの半径方向の任意の位置に第３のスラリ−供給ノズル
を固定できる固定手段を備えることを特徴とする請求項
１記載の研磨装置。4. The polishing apparatus according to claim 1, wherein said slurry supply mechanism includes fixing means for fixing a third slurry supply nozzle at an arbitrary position in a radial direction of said polishing pad.
ドの半径方向に前記第３のスラリ−供給ノズルを移動さ
せる移動位置決め機構を備えることを特徴とする請求項
１記載の研磨装置。5. The polishing apparatus according to claim 1, wherein said slurry supply mechanism includes a movement positioning mechanism for moving said third slurry supply nozzle in a radial direction of said polishing pad.
ラリ−供給ノズルが一つであることを特徴とする請求項
４または請求項５記載の研磨装置。6. The polishing apparatus according to claim 4, wherein the slurry supply mechanism has one third slurry supply nozzle.
ズルが二つであることを特徴とする請求項４または請求
項５記載の研磨装置。7. The polishing apparatus according to claim 4, wherein the slurry supply mechanism has two third nozzles.
た研磨パッドと、半導体ウェハを保持し前記研磨パッド
面に押し付け一方向に回転する少なくとも一つのウェハ
保持ヘッドと、前記半導体ウェハの端部と中心部との中
間部と前記半導体ウェハの中心部とのそれぞれに供給す
る研磨スラリ−の流量を制御する少なくとも一つのスラ
リ−供給機構を備える研磨装置において、前記半導体ウ
ェハの端部と中心部との間の中間部への前記研磨スラリ
−の流量を前記中心部への流量より多くすることを特徴
とする研磨方法。8. A polishing pad attached to a polishing platen that rotates in one direction, at least one wafer holding head that holds a semiconductor wafer and presses against the polishing pad surface and rotates in one direction, In a polishing apparatus comprising at least one slurry supply mechanism for controlling a flow rate of a polishing slurry supplied to an intermediate portion between an end portion and a central portion and a central portion of the semiconductor wafer, the polishing device includes: A polishing method, wherein a flow rate of the polishing slurry to an intermediate portion between the polishing portion and a central portion is made larger than a flow rate to the central portion.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000104579A JP2001287154A (en) | 2000-04-06 | 2000-04-06 | Polisher and polishing method |
| US09/825,174 US20020022440A1 (en) | 2000-04-06 | 2001-04-03 | Supply of controlled amount of polishing slurry to semiconductor wafers |
| KR1020010018052A KR20010098453A (en) | 2000-04-06 | 2001-04-04 | Method of polishing a semiconductor wafer and apparatus therefor |
| CN01110439A CN1316768A (en) | 2000-04-06 | 2001-04-06 | Control for supplying level of semiconductor chip polishing size |
| GB0108751A GB2363350A (en) | 2000-04-06 | 2001-04-06 | Slurry feed for wafer polishing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000104579A JP2001287154A (en) | 2000-04-06 | 2000-04-06 | Polisher and polishing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001287154A true JP2001287154A (en) | 2001-10-16 |
Family
ID=18618096
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000104579A Pending JP2001287154A (en) | 2000-04-06 | 2000-04-06 | Polisher and polishing method |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20020022440A1 (en) |
| JP (1) | JP2001287154A (en) |
| KR (1) | KR20010098453A (en) |
| CN (1) | CN1316768A (en) |
| GB (1) | GB2363350A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010240752A (en) * | 2009-04-01 | 2010-10-28 | Ebara Corp | Apparatus and method for polishing |
| JP2015061739A (en) * | 2013-10-31 | 2015-04-02 | 株式会社荏原製作所 | Polishing method and polishing device |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6722943B2 (en) * | 2001-08-24 | 2004-04-20 | Micron Technology, Inc. | Planarizing machines and methods for dispensing planarizing solutions in the processing of microelectronic workpieces |
| US6953391B1 (en) * | 2002-03-30 | 2005-10-11 | Lam Research Corporation | Methods for reducing slurry usage in a linear chemical mechanical planarization system |
| US20040214508A1 (en) * | 2002-06-28 | 2004-10-28 | Lam Research Corporation | Apparatus and method for controlling film thickness in a chemical mechanical planarization system |
| CN1305115C (en) * | 2002-09-29 | 2007-03-14 | 台湾积体电路制造股份有限公司 | Magma flow control method and system utilizing compound control mode |
| US6884152B2 (en) * | 2003-02-11 | 2005-04-26 | Micron Technology, Inc. | Apparatuses and methods for conditioning polishing pads used in polishing micro-device workpieces |
| US20040162007A1 (en) * | 2003-02-19 | 2004-08-19 | Ky Phan | Chemical mechanical polishing atomizing rinse system |
| US6872128B1 (en) * | 2003-09-30 | 2005-03-29 | Lam Research Corporation | System, method and apparatus for applying liquid to a CMP polishing pad |
| US6929533B2 (en) * | 2003-10-08 | 2005-08-16 | Taiwan Semiconductor Manufacturing Co., Ltd | Methods for enhancing within-wafer CMP uniformity |
| JP2005262406A (en) * | 2004-03-19 | 2005-09-29 | Toshiba Corp | Polishing apparatus, and method for manufacturing semiconductor device |
| US7770535B2 (en) * | 2005-06-10 | 2010-08-10 | Semiconductor Energy Laboratory Co., Ltd. | Chemical solution application apparatus and chemical solution application method |
| KR102333209B1 (en) * | 2015-04-28 | 2021-12-01 | 삼성디스플레이 주식회사 | Substrate polishing apparatus |
| KR102493016B1 (en) * | 2015-12-31 | 2023-01-31 | 주식회사 케이씨텍 | Chemical mechanical polishing apparatus and control method thereof |
| CN112930248B (en) * | 2019-04-01 | 2023-05-02 | 株式会社村田制作所 | Polishing agent supply device, polishing device, and polishing agent supply method |
| KR20210081898A (en) * | 2019-12-24 | 2021-07-02 | 에스케이하이닉스 주식회사 | Apparatus of chemical mechanical polishing And Method of driving the same |
| CN115890456A (en) * | 2022-12-29 | 2023-04-04 | 西安奕斯伟材料科技有限公司 | Polishing liquid supply device, polishing equipment and polishing method |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3334139B2 (en) * | 1991-07-01 | 2002-10-15 | ソニー株式会社 | Polishing equipment |
| US5554064A (en) * | 1993-08-06 | 1996-09-10 | Intel Corporation | Orbital motion chemical-mechanical polishing apparatus and method of fabrication |
| JP3734289B2 (en) * | 1995-01-24 | 2006-01-11 | 株式会社荏原製作所 | Polishing device |
| US6139406A (en) * | 1997-06-24 | 2000-10-31 | Applied Materials, Inc. | Combined slurry dispenser and rinse arm and method of operation |
| US5816900A (en) * | 1997-07-17 | 1998-10-06 | Lsi Logic Corporation | Apparatus for polishing a substrate at radially varying polish rates |
| DE69841223D1 (en) * | 1997-12-26 | 2009-11-19 | Ebara Corp | POLISHING DEVICE |
| US6429131B2 (en) * | 1999-03-18 | 2002-08-06 | Infineon Technologies Ag | CMP uniformity |
-
2000
- 2000-04-06 JP JP2000104579A patent/JP2001287154A/en active Pending
-
2001
- 2001-04-03 US US09/825,174 patent/US20020022440A1/en not_active Abandoned
- 2001-04-04 KR KR1020010018052A patent/KR20010098453A/en not_active Application Discontinuation
- 2001-04-06 CN CN01110439A patent/CN1316768A/en active Pending
- 2001-04-06 GB GB0108751A patent/GB2363350A/en not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010240752A (en) * | 2009-04-01 | 2010-10-28 | Ebara Corp | Apparatus and method for polishing |
| JP2015061739A (en) * | 2013-10-31 | 2015-04-02 | 株式会社荏原製作所 | Polishing method and polishing device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1316768A (en) | 2001-10-10 |
| KR20010098453A (en) | 2001-11-08 |
| GB2363350A (en) | 2001-12-19 |
| GB0108751D0 (en) | 2001-05-30 |
| US20020022440A1 (en) | 2002-02-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2001287154A (en) | Polisher and polishing method | |
| TW471994B (en) | System and method for controlled polishing and planarization of semiconductor wafers | |
| US8043140B2 (en) | Wafer polishing apparatus and wafer polishing method | |
| US20090142990A1 (en) | Method for polishing a workpiece | |
| JP2006147773A5 (en) | ||
| US6506098B1 (en) | Self-cleaning slurry arm on a CMP tool | |
| JP2008141186A (en) | Polishing method and polishing device | |
| KR20220114087A (en) | Temperature and slurry flow control in CMP | |
| JP2023530555A (en) | Apparatus and method for CMP temperature control | |
| KR20040017846A (en) | Multiport polishing fluid delivery system | |
| US6769970B1 (en) | Fluid venting platen for optimizing wafer polishing | |
| US6769959B2 (en) | Method and system for slurry usage reduction in chemical mechanical polishing | |
| JP3916846B2 (en) | Substrate polishing apparatus and substrate polishing method | |
| JP2000094316A (en) | Flattening polishing device | |
| JPH08167585A (en) | Chemical mechanical polishing device | |
| JP2001001255A (en) | Polishing cloth, polishing device and manufacture of semiconductor device | |
| KR20060038740A (en) | Chemical mechanical polishing apparatus and method | |
| US6572731B1 (en) | Self-siphoning CMP tool design for applications such as copper CMP and low-k dielectric CMP | |
| JP3272835B2 (en) | Semiconductor device manufacturing method and semiconductor manufacturing apparatus | |
| US20050107016A1 (en) | Polishing equipment, and method of manufacturing semiconductor device using the equipment | |
| US20220359219A1 (en) | Chemical Mechanical Polishing With Die-Based Modification | |
| JP2011176342A (en) | Polishing method and wiring forming method | |
| JP2000208454A (en) | Method of supplying abrasives to wafer polisher | |
| KR20060121380A (en) | Slurry delivery arm of semiconductor polishing apparatus | |
| KR200188820Y1 (en) | Device for cleaning wafer carrier of chemical mechanical polishing system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070313 |
|
| RD01 | Notification of change of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7421 Effective date: 20070704 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20080722 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20080729 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20081125 |