JP2000208454A - Method of supplying abrasives to wafer polisher - Google Patents

Method of supplying abrasives to wafer polisher

Info

Publication number
JP2000208454A
JP2000208454A JP895799A JP895799A JP2000208454A JP 2000208454 A JP2000208454 A JP 2000208454A JP 895799 A JP895799 A JP 895799A JP 895799 A JP895799 A JP 895799A JP 2000208454 A JP2000208454 A JP 2000208454A
Authority
JP
Japan
Prior art keywords
polishing
metal layer
abrasive
wafer
barrier metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP895799A
Other languages
Japanese (ja)
Inventor
Kenji Sakai
謙児 酒井
Manabu Sato
学 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Seimitsu Co Ltd
Original Assignee
Tokyo Seimitsu Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Seimitsu Co Ltd filed Critical Tokyo Seimitsu Co Ltd
Priority to JP895799A priority Critical patent/JP2000208454A/en
Priority to TW088120027A priority patent/TW415876B/en
Priority to DE19955387A priority patent/DE19955387A1/en
Priority to GB9927459A priority patent/GB2348618A/en
Publication of JP2000208454A publication Critical patent/JP2000208454A/en
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/24—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding or polishing glass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

PROBLEM TO BE SOLVED: To avoid causing the ridging, polishing a dissimilar layer to be polished, using a different abrasive, without changing a polishing surface table and improve the working efficiency. SOLUTION: For feeding abrasives to this wafer polisher, it has a system for feeding an abrasive A suited to polishing a metal layer of a wafer and a system for feeding an abrasive B suited for polishing a barrier metal layer. As the metal layer polishing ends, the feed of the abrasive A is switched to the feed of the abrasive B to polish the barrier metal layer of the wafer, using the same polishing surface table 5.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、ＬＳＩの多層化さ
れた金属配線構造の形成に必要となる層間絶縁膜の平坦
化、金属プラグ形成及び埋め込み金属配線の形成に用い
られる化学的機械的研磨（ケミカルメカニカルポリッシ
ング）法によるウエハ研磨装置における研磨剤（スラリ
ー）の供給方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chemical mechanical polishing for flattening an interlayer insulating film, forming a metal plug and forming a buried metal wiring required for forming a multilayered metal wiring structure of an LSI. The present invention relates to a method of supplying an abrasive (slurry) in a wafer polishing apparatus by a (chemical mechanical polishing) method.

【０００２】[0002]

【従来の技術】近年、ＬＳＩの高集積化、高性能化のた
めに微細加工技術が進んでおり、多層に渡ってＩＣパタ
ーンを形成することが行われている。パターンを形成し
た層の表面にはある程度の凹凸が生じるのは避けられな
い。従来はそのまま次の層のパターンを形成していた
が、層数が増加すると共に線やホールの幅が小さくなる
と良好なパターンを形成するのが難しく、欠陥などが生
じ易くなっていた。そこでパターンを形成した層の表面
を研磨して表面を平坦にした後、次の層のパターンを形
成することが行われている。また、層間を接続するメタ
ル層を形成するため、穴を形成した後メッキなどでメタ
ル層を形成し、表面のメタル層を研磨して除去すること
で穴の部分のメタル層を残すことも行われている。この
ようなＩＣパターンを形成する工程の途中でウエハを研
磨するのに、ＣＭＰ法によるウエハ研磨が使用されてい
る。2. Description of the Related Art In recent years, microfabrication techniques have been developed for high integration and high performance of LSIs, and IC patterns are formed over multiple layers. It is inevitable that a certain degree of unevenness occurs on the surface of the layer on which the pattern is formed. Conventionally, the pattern of the next layer has been formed as it is. However, when the number of layers increases and the width of a line or hole decreases, it is difficult to form a good pattern, and defects and the like are likely to occur. Therefore, after the surface of a layer on which a pattern is formed is polished to flatten the surface, a pattern of the next layer is formed. In order to form a metal layer that connects the layers, it is also necessary to form a metal layer by plating after forming a hole, and to polish and remove the surface metal layer to leave the metal layer in the hole. Have been done. Wafer polishing by a CMP method is used to polish a wafer during the process of forming such an IC pattern.

【０００３】[0003]

【発明が解決しようとする課題】ところで、ウエハにメ
タル層、例えばＣｕ層を形成する場合、ウエハ材である
シリコンの上に直接メタル層を形成すると、このメタル
がシリコン中に入り込む可能性があるため、この拡散を
防止するのに、図２に示すように、ウエハ１（シリコ
ン）とメタル層２との間にバリアメタル層３、例えばチ
タンナイトライド（Ｔi Ｎ）又はタンタルナイトライド
（ＴA Ｎ）等を設けている。図２は、ＩＣの製造工程に
おけるＣＭＰ法による加工の一例を説明する図であり、
穴の部分のメタル層２のみが残るように表面を研磨する
処理を示している。この場合、表面のメタル層２が全て
除去されるまで研磨した（図２の（ｂ））後、次いで表
面のバリアメタル層３を除去する（図２の（ｃ））まで
研磨を行う。When a metal layer, for example, a Cu layer, is formed on a wafer, if the metal layer is formed directly on silicon, which is a wafer material, the metal may enter the silicon. Therefore, to prevent this diffusion, as shown in FIG. 2, the wafer 1 (silicon) and the barrier metal layer 3 between the metal layer 2, for example, titanium nitride (T i N) or tantalum nitride (T A N) and the like. FIG. 2 is a diagram illustrating an example of processing by a CMP method in an IC manufacturing process.
This shows a process of polishing the surface so that only the metal layer 2 in the hole remains. In this case, polishing is performed until the entire surface metal layer 2 is removed (FIG. 2B), and then polishing is performed until the surface barrier metal layer 3 is removed (FIG. 2C).

【０００４】ところが、このメタル層２とバリアメタル
層３とでは、研磨特性が異なるので、それぞれの研磨処
理において研磨剤（スラリー）を変える必要があった。
そのためメタル層２の研磨が終ったウエハを別の研磨定
盤に移動して、バリアメタル層の研磨に適した別の研磨
剤を使用している研磨定盤でバリアメタル層３の研磨を
行っている。また、表面のメタル層が除去された後も研
磨が続いたりすると、メタル層２とバリアメタル層３で
は研磨の度合が５〜６倍程も異っていて、バリアメタル
層が研磨しにくいため、研磨剤によって、図２に示され
るように穴部分のメタル層が侵蝕されるリッシング４が
生じる。このリッシング４が生じると抵抗値が変わり、
回路として不良品となる。However, since the metal layer 2 and the barrier metal layer 3 have different polishing characteristics, it is necessary to change the abrasive (slurry) in each polishing process.
Therefore, the wafer whose metal layer 2 has been polished is moved to another polishing table, and the barrier metal layer 3 is polished on the polishing table using another polishing agent suitable for polishing the barrier metal layer. ing. Further, if polishing continues even after the surface metal layer is removed, the degree of polishing differs between the metal layer 2 and the barrier metal layer 3 by about 5 to 6 times, and the barrier metal layer is difficult to polish. As shown in FIG. 2, a polishing agent causes a shingle 4 in which the metal layer in the hole is eroded. When this reshing 4 occurs, the resistance value changes,
It becomes a defective product as a circuit.

【０００５】本発明は、上記問題に鑑みてなされたもの
で、ウエハの研磨処理におけるリッシングの発生を防止
できると共に早く研磨することができ、ウエハの歩留り
を向上できることを目的とする。更に本発明は、異なる
材質の層を研磨するにも、又異なる研磨剤を使用する研
磨処理においても、同一の研磨定盤を使用でき、作業の
能率が向上できることを目的とする。SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and has as its object to prevent the occurrence of shingling in a wafer polishing process, to perform polishing quickly, and to improve the wafer yield. It is another object of the present invention to be able to use the same polishing platen to polish layers of different materials and to perform polishing using different abrasives, thereby improving work efficiency.

【０００６】[0006]

【課題を解決するための手段】上記課題を解決するため
の手段として、本発明は特許請求の範囲の各請求項に記
載のウエハ研磨装置への研磨剤の供給方法を提供する。
請求項１に記載の研磨剤の供給方法は、異なる種類の研
磨剤の供給系統を複数設けて、被破磨対象の層の材質に
応じて異なる種類の研磨剤を切換えて同一研磨定盤上に
供給して研磨するようにしたものであり、リッシングの
発生を防止できると共に、従来のようにメタル層とバリ
アメタル層のそれぞれの研磨においても、研磨定盤を変
える必要がなく、作業能率が向上する。請求項２に記載
の研磨剤の供給方法は、研磨剤の供給を切換える際に、
一度純水を流して前の研磨剤を洗浄して流した後に、次
の別の研磨剤を流すようにして、前の研磨剤の影響を除
いたものである。As a means for solving the above-mentioned problems, the present invention provides a method for supplying a polishing agent to a wafer polishing apparatus described in the claims.
In the method for supplying an abrasive according to claim 1, a plurality of abrasive supply systems of different types are provided, and different types of abrasives are switched according to the material of a layer to be polished, and the same abrasive platen is provided. It is possible to prevent the occurrence of shingling, and it is not necessary to change the polishing platen for the polishing of the metal layer and the barrier metal layer as in the conventional case. improves. The method for supplying an abrasive according to claim 2, when switching the supply of the abrasive,
After flowing pure water once to wash and flow the previous abrasive, the next additional abrasive is flown to remove the influence of the previous abrasive.

【０００７】[0007]

【発明の実施の形態】以下本発明の実施の形態のウエハ
研磨装置への研磨剤の供給方法を説明する。図１は、本
発明のウエハ研磨装置への研磨剤の供給方法を示す概略
回路図である。ＣＭＰ法によるウエハ研磨装置は、研磨
定盤５とウエハ保持ヘッド１０とを有している。研磨定
盤５は、図示されていないモータにより回転軸８を中心
として回転する定盤回転台６の上に着脱自在に載置さ
れ、定盤回転台６と一緒に回転する。回転する研磨定盤
５の上面には、弾性のあるポリウレタンなどで作られた
研磨布７が貼り付けられている。回転する研磨定盤５の
研磨布７上には、ノズル９から研磨剤（スラリー）が供
給される。ウエハ保持ヘッド１０は、研磨するウエハ１
を保持して研磨布７に所定の圧力で押し付けながら、図
示されないモータにより回転軸１１を中心に回転する。
これにより、保持されたウエハ１の表面が研磨される。DESCRIPTION OF THE PREFERRED EMBODIMENTS A method for supplying an abrasive to a wafer polishing apparatus according to an embodiment of the present invention will be described below. FIG. 1 is a schematic circuit diagram showing a method of supplying an abrasive to a wafer polishing apparatus according to the present invention. The wafer polishing apparatus based on the CMP method has a polishing table 5 and a wafer holding head 10. The polishing platen 5 is removably mounted on a platen turntable 6 that rotates about a rotation shaft 8 by a motor (not shown), and rotates together with the platen turntable 6. A polishing cloth 7 made of elastic polyurethane or the like is attached to the upper surface of the rotating polishing table 5. An abrasive (slurry) is supplied from a nozzle 9 onto the polishing cloth 7 of the rotating polishing table 5. The wafer holding head 10 holds the wafer 1 to be polished.
While pressing the polishing pad against the polishing pad 7 with a predetermined pressure, the motor is rotated about a rotating shaft 11 by a motor (not shown).
Thereby, the surface of the held wafer 1 is polished.

【０００８】ウエハ１のメタル層２及びバリアメタル層
３を研磨するために、それぞれ異なった種類の研磨剤の
供給系統がそれぞれ分岐して設けられている。図１に
は、それぞれタンク１２、ポンプ１３、弁１４よりなる
供給系統である、メタル層を研磨する研磨剤用Ａと、バ
リアメタル層を研磨する研磨剤用Ｂ及び純水供給用Ｃと
の、三つの系統が示されている。弁１４の下流でこれら
は合流してノズル９へとつながっている。この研磨剤の
供給系統は必要に応じ更に多くの系統を増やすことも可
能である。In order to polish the metal layer 2 and the barrier metal layer 3 of the wafer 1, supply systems of different types of abrasives are provided in a branched manner. FIG. 1 shows an abrasive system A for polishing a metal layer, an abrasive system B for polishing a barrier metal layer, and a pure water supply system C, each of which is a supply system including a tank 12, a pump 13, and a valve 14. , Three lines are shown. Downstream of valve 14 they merge and lead to nozzle 9. It is possible to increase the number of the supply system of the polishing agent as needed.

【０００９】本発明のウエハ研磨装置への研磨剤の供給
方法においては、まずウエハ１のメタル層２を研磨する
際は、Ａの研磨剤供給系統を作動（ポンプを駆動、弁を
開にする）させ、Ｂの研磨剤供給系統及び純水供給系統
を非作動（ポンプを停止、弁を閉にする）にしておき、
その後、一定時間経過後、表面のメタル層が削除された
点で、Ａの研磨剤供給系統を非作動にし、純水供給系統
を作動させ、洗浄した後にこの純水供給系統を非作動に
し、次にＢの研磨剤供給系統を作動させることによって
バリアメタル層３を研磨するようにしている。なお、こ
の純水供給系統は、既存の純水系を使用することもでき
る。In the method of supplying an abrasive to a wafer polishing apparatus according to the present invention, when the metal layer 2 of the wafer 1 is polished, the abrasive supply system of A is operated (the pump is driven and the valve is opened). ), And deactivate the abrasive supply system and the pure water supply system of B (stop the pump and close the valve),
Then, after a certain period of time, at the point where the metal layer on the surface is removed, the abrasive supply system of A is deactivated, the pure water supply system is activated, and after cleaning, the pure water supply system is deactivated, Next, the barrier metal layer 3 is polished by operating the abrasive supply system B. The pure water supply system can use an existing pure water system.

【００１０】なお、上記では、表面のメタル層２の削除
の終了を経験上の時間管理によって得られた時間で、弁
とポンプの切換を行っているが、メタル層の摩擦力等に
よってその終端を検知する検知装置とリンクして、この
弁とポンプの切換制御を行えば、更に効率が良くなる。In the above description, the valve and the pump are switched by the time obtained by empirical time management to complete the removal of the metal layer 2 on the surface. If the switching control of the valve and the pump is performed by linking to a detection device for detecting the pressure, the efficiency is further improved.

【００１１】[0011]

【発明の効果】以上説明したように、本発明のウエハ研
磨装置への研磨剤の供給方法においては、異なる種類の
研磨剤の供給系統を切換えるだけで、シニングの発生を
防止でき、ウエハの歩留りを向上できると共に、異なる
研磨剤を使用する異なる材質の層の研磨処理において
も、同一の研磨定盤を使用でき、その作業効率が向上す
る。As described above, in the method for supplying an abrasive to a wafer polishing apparatus according to the present invention, the occurrence of thinning can be prevented only by switching the supply system of different types of abrasives, and the yield of the wafer can be reduced. In addition to the above, the same polishing platen can be used in the polishing of layers of different materials using different abrasives, and the work efficiency is improved.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明の実施の形態のウエハ研磨装置への研磨
剤の供給方法の概略回路図である。FIG. 1 is a schematic circuit diagram of a method for supplying an abrasive to a wafer polishing apparatus according to an embodiment of the present invention.

【図２】ＩＣの製造工程におけるＣＭＰ法による加工を
説明する図である。FIG. 2 is a diagram illustrating processing by a CMP method in an IC manufacturing process.

【符号の説明】[Explanation of symbols]

１…ウエハ ５…研磨定盤 ７…研磨布 ９…ノズル １０…ウエハ保持ヘッド １２…タンク １３…ポンプ １４…弁 DESCRIPTION OF SYMBOLS 1 ... Wafer 5 ... Polishing surface plate 7 ... Polishing cloth 9 ... Nozzle 10 ... Wafer holding head 12 ... Tank 13 ... Pump 14 ... Valve

Claims (2)

【特許請求の範囲】[Claims] 【請求項１】 ウエハを化学的機械的研磨法により研磨
するウエハ研磨装置に研磨剤を供給する方法において、 ウエハ上のメタル層とバリアメタル層を研磨するため
に、それぞれ異なる種類の研磨剤の供給系統を複数用意
すると共に、 メタル層又はバリアメタル層の終端の研磨に伴って、そ
れぞれの層に適した研磨剤の供給系統に切換えて研磨剤
を同一研磨定盤上に供給して、メタル層又はバリアメタ
ル層の研磨を行うことを特徴とするウエハ研磨装置への
研磨剤の供給方法。In a method of supplying an abrasive to a wafer polishing apparatus for polishing a wafer by a chemical mechanical polishing method, different types of abrasives are used to polish a metal layer and a barrier metal layer on the wafer. Along with preparing a plurality of supply systems, along with polishing of the end of the metal layer or the barrier metal layer, switch to an abrasive supply system suitable for each layer and supply the abrasive on the same polishing platen, A method for supplying a polishing agent to a wafer polishing apparatus, comprising polishing a layer or a barrier metal layer. 【請求項２】 純水の供給系統を更に用意し、前記研磨
剤の切換の間に純水を流して研磨定盤を洗浄することを
特徴とする請求項１に記載のウエハ研磨装置への研磨剤
の供給方法。2. The wafer polishing apparatus according to claim 1, further comprising a pure water supply system, wherein the polishing table is washed by flowing pure water during the switching of the polishing agent. How to supply the abrasive.
JP895799A 1999-01-18 1999-01-18 Method of supplying abrasives to wafer polisher Pending JP2000208454A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP895799A JP2000208454A (en) 1999-01-18 1999-01-18 Method of supplying abrasives to wafer polisher
TW088120027A TW415876B (en) 1999-01-18 1999-11-17 Method of feeding polishing agents into a wafer-polishing apparatus
DE19955387A DE19955387A1 (en) 1999-01-18 1999-11-18 Polishing agent feed to semiconductor disc polisher based on chemical-mechanical polishing (CMP) for flattening intermediate insulation foil
GB9927459A GB2348618A (en) 1999-01-18 1999-11-19 Polishing multi-layer semiconductor components

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP895799A JP2000208454A (en) 1999-01-18 1999-01-18 Method of supplying abrasives to wafer polisher

Publications (1)

Publication Number Publication Date
JP2000208454A true JP2000208454A (en) 2000-07-28

Family

ID=11707163

Family Applications (1)

Application Number Title Priority Date Filing Date
JP895799A Pending JP2000208454A (en) 1999-01-18 1999-01-18 Method of supplying abrasives to wafer polisher

Country Status (4)

Country Link
JP (1) JP2000208454A (en)
DE (1) DE19955387A1 (en)
GB (1) GB2348618A (en)
TW (1) TW415876B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006095677A (en) * 2004-08-30 2006-04-13 Showa Denko Kk Polishing method
JP2006261261A (en) * 2005-03-16 2006-09-28 Renesas Technology Corp Apparatus and method for chemical mechanical polishing

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110202480B (en) * 2019-07-09 2023-09-05 辽宁翔舜科技有限公司 Full-automatic rapid coal tar sheet surface treatment machine system and treatment method

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5700180A (en) * 1993-08-25 1997-12-23 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing
US5340370A (en) * 1993-11-03 1994-08-23 Intel Corporation Slurries for chemical mechanical polishing
US5676587A (en) * 1995-12-06 1997-10-14 International Business Machines Corporation Selective polish process for titanium, titanium nitride, tantalum and tantalum nitride
US5700383A (en) * 1995-12-21 1997-12-23 Intel Corporation Slurries and methods for chemical mechanical polish of aluminum and titanium aluminide
US6204169B1 (en) * 1997-03-24 2001-03-20 Motorola Inc. Processing for polishing dissimilar conductive layers in a semiconductor device
GB2326523B (en) * 1997-11-24 1999-11-17 United Microelectronics Corp Chemical mechanical polishing methods using low ph slurry mixtures

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006095677A (en) * 2004-08-30 2006-04-13 Showa Denko Kk Polishing method
JP2006261261A (en) * 2005-03-16 2006-09-28 Renesas Technology Corp Apparatus and method for chemical mechanical polishing

Also Published As

Publication number Publication date
TW415876B (en) 2000-12-21
GB2348618A (en) 2000-10-11
GB9927459D0 (en) 2000-01-19
DE19955387A1 (en) 2000-07-27

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