JP3192346B2 - Semiconductor device manufacturing method and semiconductor manufacturing apparatus - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device and a semiconductor manufacturing apparatus for performing the method.
More particularly, the present invention relates to a dressing method for regenerating a polishing cloth attached to a polishing plate of a grinding device for polishing a semiconductor substrate so that the polishing cloth can be polished again by dressing, and a grinding device for performing the polishing method.

[0002]

2. Description of the Related Art Semiconductor devices such as ICs and LSIs have a design process of designing an integrated circuit formed on a semiconductor substrate, a mask making process of drawing an electron beam used for forming an integrated circuit, and a single crystal. A wafer manufacturing process for forming a wafer of a predetermined thickness from an ingot, a wafer processing process for forming a semiconductor element such as an integrated circuit on the wafer, an assembling process and an inspection for separating and packaging the wafer into individual semiconductor substrates to form a semiconductor device It is formed through steps and the like. In each step, a manufacturing apparatus necessary for the step is prepared. In addition to the above, other equipment required for facilities and the environment, such as a pretreatment device and an exhaust gas treatment device, are used for the semiconductor manufacturing device. Conventionally, in a wafer processing process, an arbitrary material such as metal, polysilicon, silicon oxide film (SiO ₂ ) is buried in a trench portion such as a trench or a contact hole, and then the surface is flattened. Reactive Ion Etching) method is known. Hereinafter, the method will be described with reference to FIGS.

First, a semiconductor substrate 1 such as a silicon semiconductor
A SiO ₂ film 2 formed by a thermal oxidation method or the like and a polysilicon film 3 serving as a stopper film are formed by a CVD method or the like (FIG. 4A). Next, the polysilicon film 3, SiO
_The film 2 and the surface of the semiconductor substrate 1 are selectively removed by RIE to form a groove 4 therein (FIG. 4B). Next, S is formed on the inside of the trench 4 and the surface of the polysilicon film 3.
An iO ₂ film 5 is deposited by a CVD method (FIG. 4).
(C)). At this time, the SiO ₂ film 5 on the groove 4
A depression 51 corresponding to the recess of the groove 4 is formed on the surface.
Further, in order to reduce irregularities on the surface of the SiO ₂ film 5,
An etch-back resist 6 is formed on the SiO ₂ film 5 (FIG. 5A). Next, the etch-back resist 6 and S
Under the condition that the iO ₂ film 5 has almost the same etching rate, R
IE is performed (FIG. 5B). When this etch-back RIE is used, the SiO ₂ film 5 is buried only in the groove 4, and the surface of the polysilicon film 3, that is, the wafer surface becomes flat. However, the protrusions 52 remain in the portions where the recesses 51 exist, and it is difficult to sufficiently planarize them. The surface of the wafer 1 can be flattened by setting the etching rate of the polysilicon film 3 serving as a stopper film to be smaller than that of the SiO ₂ film 5.

However, this etch-back RIE method requires a large number of steps such as application of an etch-back resist, RIE damage to the wafer surface, difficulty in good planarization, and the use of a vacuum system. Therefore, there are many problems due to the complicated structure and the use of dangerous etching gas. As an integrated circuit formed in a semiconductor device becomes highly integrated and miniaturized, a pattern becomes smaller and a surface shape becomes more complicated. Therefore, the conventional flattening technique cannot sufficiently cope with it.
Therefore, instead of etch back RIE in recent years, CMP
(Chemical Mechanical Polishing) method has come to be used. Next, FIG. 6 shows an outline of a polishing apparatus for CMP used for flattening a wafer surface, and its configuration will be described. A polishing disc receiver 15 is arranged on the base 11 via a bearing 13. A polishing board 17 is mounted on the polishing receiver 15. On the polishing board 17, a polishing cloth 19 for polishing a wafer is attached. A drive shaft 21 is connected to a central portion of the polishing receiver 15 and the polishing disk 17 for rotating the polishing receiver 15 and the polishing disk 17. The drive shaft 21 is rotated by a motor 23 via a rotating belt 25.

[0005] On the other hand, the wafer 20 is evacuated to a position corresponding to the polishing pad 19 by a vacuum or the like.
9 and a suction plate 33 provided with a suction cloth 31. This suction disk 33 is connected to a drive shaft 35. The drive shaft 35 is connected to the motor 3
7 through the gears 39 and 41. The drive shaft 35 is fixed to the drive base 43 for vertical movement. With such a structure, the drive table 43 moves up and down with the up and down movement by the cylinder 45, whereby the wafer 20 fixed to the suction plate 33 is moved to the polishing pad 19.
Or away from the polishing pad 19. An abrasive is flowed between the wafer 20 and the polishing cloth 19 according to the purpose, whereby the wafer 20 is polished. Although not shown in the drawings, the wafer can be moved in the XY direction (horizontal direction) by another drive system during polishing.

Next, an example of a flattening process of a wafer surface by a CMP method using the polishing apparatus shown in FIG. 6 will be described with reference to FIGS. 7 and 8. An Si ₃ N ₄ film 7 is formed on a semiconductor substrate 1 such as silicon by a CVD method or the like (FIG. 7A). Then, Si ₃ by patterning
Etching a predetermined portion of the N ₄ film 7 and the semiconductor substrate 1,
A groove 8 is formed there (FIG. 7B). And Si ₃
An SiO ₂ film 5 is laminated on the N ₄ film 7 and in the groove 8 by a CVD method (FIG. 8A). Then, S
The SiO ₂ film 5 is polished to form a stopper film of Si.
The polishing of the SiO ₂ film 5 is terminated at the stage when the exposure of the ₃ N ₄ film 7 is detected, so that the SiO ₂ film 5
_When the embedding of the _two films 5 is completed, the surface of the semiconductor substrate 1 is flattened (FIG. 8B). This CMP method is shown in FIG.
In addition, the number of steps is shorter than that of the etch-back RIE method shown in FIG. 5, and excellent planarization is achieved. Note that the CMP method itself is not a new technology, but a technology used in a manufacturing process in a wafer manufacturing process in the semiconductor device manufacturing process described above. Recently, CMP technology has been used in the manufacturing process of highly integrated devices. Therefore, next, an application example thereof will be described with reference to FIGS.

FIG. 9 shows an application of the CMP method in a trench element isolation process. After the surface of the semiconductor substrate 1 is thermally oxidized to form the SiO ₂ film 2, a Si ₃ N ₄ film 7 serving as a polishing stopper film is formed on the SiO ₂ film by CV.
Formed by Method D. Next, the Si ₃ N ₄ film 7 in the element isolation formation region and the SiO 3
_The groove 9 is formed by removing the film 2 and a part of the semiconductor substrate 1. Subsequently, the surface of the semiconductor substrate 1 in the trench 9 is oxidized, and boron is ion-implanted into the bottom of the trench 9 to form a channel cut region 10. Next, a polysilicon film 3 is formed on the Si ₃ N ₄ film 7 and in the trench 9 by a CVD method (FIG. 9A). SiO ₂ may be used instead of the polysilicon film. Next, the polysilicon 3 on the surface of the semiconductor substrate 1 is polished until the Si ₃ N ₄ film 7 is exposed (FIG. 9B). Under the polishing conditions at this time, since the polishing rate of the Si ₃ N ₄ film 7 is smaller than that of the polysilicon film, that is, about 1/10 to 1/200, polishing is performed with the Si ₃ N ₄ film 7. The polysilicon film 3 can be buried only inside the groove. As described above, as the stopper film in the polishing, a material having a lower polishing rate than the film to be polished is selected, and by specifying the polishing time, the polishing can be completed when the stopper film is exposed.

Next, with reference to FIGS. 10 and 11, an application example of the CMP method used for embedding a metal wiring in a groove of an insulating film will be described. S by CVD on the semiconductor substrate 1
An iO ₂ film 5 and a plasma SiO ₂ film 12 are successively formed (FIG. 10A). Next, the plasma SiO ₂ film 12 is patterned to form a groove 14 at a predetermined position.
0 (b)). A Cu film 16 is laminated in the groove 14 and on the entire surface of the plasma SiO ₂ film 12 (FIG. 10C). The Cu film 16 is polished using the plasma SiO ₂ film 12 as a stopper film. When the polishing of the Cu film 16 is completed at the stage where the plasma SiO ₂ film 12 is exposed, the Cu film 14 is buried only in the groove portion 14 and a Cu buried wiring is formed (FIG. 11A). By this polishing, the surface of the semiconductor substrate 1 is planarized, and the subsequent formation of the second-layer plasma SiO ₂ film 18 is facilitated (FIG. 11).
(B)). The planarization by the CMP method allows the second and third layers to be formed.
It becomes easy to form a layer of electrode wiring (not shown).

[0009]

In the case of polishing with a polishing apparatus as shown in FIG.
A semiconductor substrate is polished while an abrasive (slurry) containing abrasive particles such as ceria and silica is supplied to a polishing cloth. Usually, 0.5 to 1 lot of semiconductor substrates (wafers) are polished with one polishing cloth (one lot has 24 wafers). However, when polishing is performed using the same polishing cloth, abrasive particles are accumulated in the polishing cloth as the number of semiconductor substrates increases. As a result, problems such as an increase in the polishing rate and an increase in the in-plane variation occur. The current method of removing these abrasive particles relies on physical dressing, such as by friction of nylon brushes or diamond particles, but this method cannot completely remove the accumulated abrasive particles from the polishing cloth. FIG. 3 is a characteristic diagram for explaining the operation and effect of the conventional dressing method, and shows the polishing rate and the in-plane variation depending on the number of semiconductor substrates to be polished.

The vertical axis in the figure is the polishing rate (nm / nm).
min) and in-plane variation (%) of the semiconductor substrate.
The horizontal axis indicates the number of semiconductor substrates to be polished by one polishing cloth. The polishing rate and the in-plane variation are good at most when the number of semiconductor substrates is up to about 50, and when the number exceeds that, the polishing rate increases and the in-plane variation of the semiconductor substrate increases accordingly. When the polishing rate increases, the uniformity of the polishing finish on the surface of the semiconductor substrate deteriorates, and the in-plane variation increases as shown in the figure. SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and a semiconductor manufacturing method capable of performing stable polishing by reducing the polishing rate of a semiconductor substrate polished with the same polishing cloth and the in-plane variation of the semiconductor substrate. It is an object to provide a device and a method for manufacturing a semiconductor device.

[0011]

According to the present invention, there is provided a method of manufacturing a semiconductor device, comprising: polishing a plurality of semiconductor substrates using a polishing cloth which is polished while applying an abrasive containing abrasive particles; Dressing the polishing cloth polished with a dressing liquid that dissolves abrasive particles. In the step of dressing the polishing cloth, brushing may be performed using a brush while performing the dressing. After the step of dressing the polishing cloth, a step of dressing the polishing cloth with water may be further added. In the step of dressing the polishing cloth with water, brushing may be performed using a brush while performing the dressing. Any of hydrofluoric acid, nitric acid, and sulfuric acid may be used as a dressing liquid for dissolving the abrasive particles.

Further, the semiconductor manufacturing apparatus of the present invention supplies a polishing cloth, a polishing disk rotated by a polishing disk drive shaft and having the polishing cloth mounted on a surface thereof, and a dressing liquid for dissolving abrasive particles in the polishing cloth. And a brush for brushing the polishing cloth, and a means for supplying water to the polishing cloth. 7. The semiconductor manufacturing apparatus according to claim 6, further comprising a sensor comprising a resistivity meter or a pH sensor disposed at or near the means for discharging the dressing liquid and water, wherein the water contained in the water discharged by the sensor is provided. The dressing liquid may be detected.

[0013]

The polishing cloth of the polishing apparatus can be almost returned to a state before use by performing dressing with a chemical dressing liquid instead of or in addition to brushing with a brush. The polishing rate increases and the in-plane variation of the semiconductor substrate decreases.

[0014]

Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a sectional view of a portion of a polishing apparatus of a semiconductor manufacturing apparatus used in the method of manufacturing a semiconductor device according to the present invention, on which a polishing plate is formed. A conventional polishing apparatus shown in FIG. 6 can be applied to a polishing apparatus including this polishing disk. A drive shaft 21 is connected to the center of the polishing disk 17 via a polishing disk receiver (not shown). On the polishing board 17, a polishing cloth 19 for polishing a semiconductor substrate (wafer) is attached. The polishing cloth 19 is made of foamed polyurethane or polyurethane nonwoven fabric. The drive shaft 21
It is rotated by a motor to rotate the polishing plate receiver and the polishing plate 17. On the other hand, the semiconductor substrate is suctioned by a vacuum or the like by a suction disk provided with a suction cloth (not shown) so as to come to a position opposing to the polishing cloth 19. The suction disk is connected to a drive shaft (not shown), and the movement of the drive shaft causes the semiconductor substrate fixed to the suction disk to be pressed against the polishing cloth 19 or separated from the polishing cloth 19.
When polishing with this polishing apparatus, a semiconductor substrate is polished while supplying an abrasive (slurry) containing abrasive particles such as ceria (CeO ₂ ) or silica (SiO ₂ ) to a polishing cloth.

The polishing apparatus is provided with an apparatus for performing a brushing process and a dressing process. Above the polishing board 17, a brush 22 for brushing the polishing cloth 19 is arranged. This brush 22
It is connected to a rotating shaft 26 via a brush receiver 24 that supports it. The brush is composed of a brush receiver 24 made of a corrosion-resistant material such as Teflon or vinyl chloride, and a brush 22 made of a brush-coated material such as nylon, which is also made of a corrosion-resistant material. Alternatively, a brush having a structure in which diamond particles are adhered to the surface of a metal substrate may be used. In addition, above the polishing board 17,
A pipe 27 for supplying a dressing liquid for dissolving abrasive particles such as hydrofluoric acid to the polishing cloth, and a pipe 28 for supplying pure water to the polishing cloth are provided. On the other hand, in this polishing apparatus, an envelope 30 is provided so as to surround the drive shaft 21, and a discharge port 32 for discharging a waste liquid such as used pure water or a dressing liquid is provided at the bottom of the envelope 30. Is formed. A sensor 34 for detecting the state of the waste liquid is formed near the outlet of the outlet 32,
4 is detected by a detector 36 connected to the detector 4. The sensor 34 includes, for example, a resistivity meter or a pH sensor.

Polishing, dressing and brushing are performed using the semiconductor manufacturing apparatus having such a structure. The polishing-dressing / brushing process is performed in the following procedure. That is, a plurality of wafers are polished with a single polishing cloth (a plurality of polishings are performed) → the polishing cloth is dressed / brushed to regenerate → a plurality of wafers are polished again with the polishing cloth (a plurality of polishing cloths). Times polishing). Then, repeat this process. The polishing is performed, for example, using a suction disk of a polishing apparatus shown in FIG. 6 and a polishing disk 1 in which the semiconductor substrate rotates at about 100 rpm.
This is performed by pressing against the polishing cloth 19 on the upper surface of the wafer 7. The rotation speed of the polishing disk 17 is usually 20 to 200 rpm, and the processing pressure is 50 to 500 g / cm ² . At this time, polishing is performed while supplying an abrasive (slurry) containing abrasive particles such as ceria (CeO ₂ ) and silica (SiO ₂ ) to the polishing cloth. After polishing a plurality of semiconductor substrates with a predetermined polishing cloth, dressing / brushing is performed on the polishing cloth. At this time, the drive shaft for supporting the brush is brought on the polishing board by a swing arm or the like instead of the drive shaft for driving the suction board for sucking and supporting the semiconductor substrate.

The polishing is performed by, for example, the following four methods. (1) Supply pipe 27 to polishing cloth 19 on polishing board 17
Then, a dressing solution for dissolving the abrasive particles is dropped, and the dressing solution penetrates the entire surface of the dressing surface of the polishing pad 19 to dissolve the abrasive particles contained in the polishing agent remaining at the polishing pad 19 and used for polishing. The dressing liquid in which the abrasive particles have been dissolved flows into the envelope 30,
It is discharged to the outside from a discharge port 32 formed on the bottom surface of the envelope 30. Next, pure water is dropped from the supply pipe 28 onto the polishing pad 19, and the remaining dressing liquid is dissolved to form a discharge port 3.
2 to the outside. (2) Supply pipe 27 to polishing cloth 19 on polishing board 17
Then, a dressing solution for dissolving the abrasive particles is dropped, and the dressing solution penetrates the entire surface of the dressing surface of the polishing pad 19 to dissolve the abrasive particles contained in the polishing agent remaining at the polishing pad 19 and used for polishing. The dressing liquid in which the abrasive particles have been dissolved flows into the envelope 30,
It is discharged to the outside from a discharge port 32 formed on the bottom surface of the envelope 30. Next, pure water is dropped onto the polishing cloth 19 from the supply pipe 28, and the remaining dressing liquid is discharged from the discharge port 32 to the outside while brushing the polishing cloth 19 with the brush 22 rotated by the rotating shaft 26. . The rotation speed of the brush 22 is about 50 rpm.

(3) A dressing solution for dissolving abrasive particles is dropped from the supply pipe 27 onto the polishing cloth 19 on the polishing board 17, and the dressing liquid penetrates the entire surface of the dressing surface of the polishing cloth 19. Dissolve the abrasive particles contained in the abrasive used during polishing remaining in the polishing. At this time, the polishing pad 19 is brushed by the brush 22 rotated by the rotating shaft
The abrasive particles that have entered the inside are lifted to the surface to facilitate the dissolution of the abrasive particles. The rotation speed of the brush 22 is about 50 rpm. The dressing liquid in which the abrasive particles have been dissolved flows into the envelope 30 and is discharged to the outside through a discharge port 32 formed on the bottom surface of the envelope 30. Next, pure water is dropped onto the polishing pad 19 from the supply pipe 28 to dissolve the remaining dressing liquid and discharge it from the discharge port 32 to the outside.

(4) A dressing solution for dissolving the abrasive particles is dropped from the supply pipe 27 onto the polishing cloth 19 on the polishing board 17, and the dressing liquid penetrates the entire dressing surface of the polishing cloth 19 so that the polishing cloth 19 Dissolve the abrasive particles contained in the abrasive used during polishing remaining in the polishing. At this time, the polishing pad 19 is brushed by the brush 22 rotated by the rotating shaft
The abrasive particles that have entered the inside are lifted to the surface to facilitate the dissolution of the abrasive particles. The rotation speed of the brush 22 is about 50 rpm. The dressing liquid in which the abrasive particles have been dissolved flows into the envelope 30 and is discharged to the outside through a discharge port 32 formed on the bottom surface of the envelope 30. Next, pure water is dropped onto the polishing pad 19 from the supply pipe 28,
The remaining dressing liquid is discharged from the discharge port 32 to the outside while brushing the polishing pad 19 with the brush 22 rotated by the rotating shaft 26. Brush 2
The rotation speed of No. 2 is about 50 rpm, and the brush 22 may be continuously rotated at the same rotation speed as the brush 22 during brushing while dressing with a dressing liquid.

As described above, in this embodiment, polishing is performed by any one of the four methods. In the dressing with the dressing liquid, the dressing liquid must be supplied to the polishing cloth 19 until the dressing liquid dissolves the abrasive particles that have entered the polishing cloth, and therefore, is supplied from the supply pipe 27 until a predetermined time. After the abrasive particles have been sufficiently dissolved from the polishing cloth 19, the supply of the dressing liquid is stopped,
Subsequently, pure water is supplied from the supply pipe 28 to the polishing pad 19. The dressing with pure water is supplied to the polishing pad, and the supply is stopped after the pure water discharged no longer contains the dressing liquid. To this end, a sensor is disposed at the bottom of the envelope 30 for discharging the dressing liquid or water or in the vicinity formed at the vicinity thereof, and the sensor detects the dressing liquid contained in the pure water discharged and terminates the dressing. Know.

The dressing liquid must be a material that effectively dissolves abrasive particles contained in the abrasive used for polishing. Therefore, the material of the dressing liquid differs depending on the material of the abrasive particles. For example, hydrofluoric acid (HF)
Dissolves silica (SiO ₂ ) and ceria (CeO ₂ ) used for abrasive particles, and sulfuric acid (H ₂ SO ₄ ) dissolves silica particularly well. Further, nitric acid (HNO ₃ ) is also effective as the dressing liquid of the present invention. Since the above-mentioned hydrofluoric acid can dissolve abrasive particles of any material, there is no need to select a material, and it is an effective dressing liquid material. In this embodiment, hydrofluoric acid capable of coping with abrasive particles of any material is used as a dressing liquid. As the sensor 34 disposed in the vicinity of the outlet 32, for example, a resistivity meter, a pH sensor, or the like is used. And with these sensors,
The dressing is terminated when it is detected that the dressing liquid such as hydrofluoric acid contained in the pure water discharged upon knowing the change in the resistance value and the change in the pH value is no longer contained.

Next, the operation and effect of the dressing method of the present invention will be described with reference to FIG. FIG. 3 is a characteristic diagram showing the polishing rate and the dependence of the in-plane variation on the number of semiconductor substrates to be polished. The vertical axis shows the polishing rate (nm / min) and the in-plane variation (%) of the semiconductor substrate. The horizontal axis indicates the number of semiconductor substrates to be polished by one polishing cloth. In the polishing cloth subjected to the dressing treatment with hydrofluoric acid of the present invention, even when 150 or more semiconductor substrates were polished, almost no change in the polishing rate or in-plane variation was recognized. With a polishing cloth that has been subjected to a conventional dressing process, the polishing rate and in-plane variation vary significantly even if at most about 50 semiconductor substrates are polished as described above. The semiconductor manufacturing apparatus of the present invention is applied to a method of manufacturing a semiconductor device including the wafer processing steps shown in FIGS.

[0023]

As described above, in the present invention, the abrasive particles that have entered the polishing cloth are dressed with a dressing liquid. Therefore, the polishing rate and the in-plane variation of the semiconductor substrate polished with this polishing cloth are the same in any semiconductor substrate. Such a value stabilizes the polishing rate and the in-plane variation.

[Brief description of the drawings]

FIG. 1 is a partial sectional view of a polishing apparatus of a semiconductor manufacturing apparatus according to the present invention.

FIG. 2 is a characteristic diagram showing a polishing rate and an in-plane variation of the number of semiconductor substrates by a polishing cloth for explaining the manufacturing method of the present invention.

FIG. 3 is a characteristic diagram showing the dependence of the polishing rate and in-plane variation on the number of semiconductor substrates by a polishing cloth for explaining a conventional manufacturing method.

FIG. 4 is a cross-sectional view of a planarization process of a laminated film by a conventional etch-back RIE method.

FIG. 5 is a cross-sectional view of a planarization process of a stacked film by a conventional etch-back RIE method.

FIG. 6 is a sectional view of a conventional polishing apparatus.

FIG. 7 is a cross-sectional view of a flattening process of a SiO ₂ film according to the present invention and a conventional CMP method.

FIG. 8 is a cross-sectional view of a flattening process of an SiO ₂ film according to the present invention and a conventional CMP method.

FIG. 9 is a sectional view of a trench element isolation process according to the present invention and a conventional CMP method.

FIG. 10 is a cross-sectional view of a metal wiring embedding process according to the present invention and a conventional CMP method.

FIG. 11 is a cross-sectional view of a process of embedding metal wiring according to the present invention and a conventional CMP method.

[Explanation of symbols]

1 ... semiconductor substrate, 2, 5, 12, 18 ... S
iO ₂ film, 3 ... polysilicon film, 4, 8, 9,
14 ... groove, 6 ... etch back resist,
7: Si ₃ N ₄ film, 10: channel cut region, 11: table, 13: bearing, 1
5: Polishing plate receiver, 16: Cu film, 17 ...
Polishing machine, 19: polishing cloth, 20: wafer, 21, 26, 35 ... drive shaft, 22
..Brushes, 23, 37 ... motors, 24 ...
Brush receiver, 25 ... rotating belt, 27, 28
..Supply pipes, 29 ... templates, 30.
..Envelope, 31 ... Suction cloth, 32 ... Discharge port, 33 ... Suction board, 34 ... Sensor,
36 ... detector, 39, 41 ... gear, 43
..Drive stands, 45 ... cylinders, 51 ... dents, 52 ... convex parts

──────────────────────────────────────────────────続 き Continued on front page (58) Field surveyed (Int. Cl. ⁷ , DB name) H01L 21/304 622 B24B 37/00

Claims (7)

(57) [Claims] 1. A step of polishing a plurality of semiconductor substrates using a polishing cloth which is polished while applying an abrasive containing abrasive particles, and the step of polishing the polishing cloth polished on the plurality of semiconductor substrates with a dressing liquid for dissolving the abrasive particles. And a dressing step. 2. The method according to claim 1, wherein in the step of dressing the polishing cloth, brushing is performed using a brush while performing the dressing. 3. The method according to claim 1, further comprising, after the step of dressing the polishing cloth, a step of dressing the polishing cloth with water. 4. The method according to claim 3, wherein in the step of dressing the polishing cloth with water, brushing is performed using a brush while performing the dressing. 5. The method for manufacturing a semiconductor device according to claim 1, wherein the dressing solution for dissolving the abrasive particles is made of any one of hydrofluoric acid, nitric acid, and sulfuric acid. . 6. A polishing cloth, a polishing disk rotated by a polishing disk drive shaft and having the polishing cloth attached to a surface thereof, a means for supplying a dressing liquid for dissolving abrasive particles in the polishing cloth, A semiconductor manufacturing apparatus comprising: a brush for brushing; and a unit for supplying water to the polishing cloth. 7. The semiconductor manufacturing apparatus according to claim 6, further comprising a sensor comprising a resistivity meter or a pH sensor disposed at or near the means for discharging the dressing liquid and water, and the sensor being discharged by the sensor. A semiconductor manufacturing apparatus for detecting the dressing liquid contained in water.