JP2001284496A - Resin sealed semiconductor device and manufacturing method therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a resin sealed semiconductor device which reduces a thermal resistance using an existing lead frame, is easily produced, and can be thinner, and to provide a manufacturing method therefor. SOLUTION: A semiconductor device 1 comprises at least; (a) a chip 3 firmly fixed to a chip mounting part 13, (b) an exterior terminal 11, (c) a thin metallic wire 5 for connecting an inner terminal 12 to an outer connecting electrode of the chip 3, (d) a resin 7 for sealing a predetermined area including the chip 3, a thin metallic wire 5 and an inner terminal 12, and (e) encapsulation plates 22 and 32 being formed with kovar on top and bottom faces of an encapsulation resin body 2. The encapsulation plates 22 and 32 have an approximately the same planar shape as an encapsulation resin body 2 of a semiconductor device 1, the first principal plane being buried in the resin 7, and the second principal plane on the other side being exposed to the outside. In addition, in a predetermined position of the first principal plane of each encapsulation plate 22, supporting projections 23 and 33 are formed to be united with an encapsulation plate 22 and are abutted with appointed terminals in a facing manner for the top and the bottom.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin-encapsulated semiconductor device and a method of manufacturing the same, and more particularly, to a resin-encapsulated semiconductor device having a sealing plate different from a sealing resin on both upper and lower surfaces of a sealing resin body. And its manufacturing method.

[0002]

2. Description of the Related Art As an example of a resin-sealed semiconductor device having a sealing plate different from a sealing resin on both upper and lower surfaces of a sealing resin body, heat radiating plates are provided on both the upper and lower surfaces in order to obtain high heat dissipation. What is disclosed in JP-A-61-166051 (hereinafter, referred to as
Known example 1) or JP-A-4-27145 (hereinafter referred to as known example 2).

FIG. 6 is a cross-sectional view of a resin-encapsulated semiconductor device disclosed in the prior art 1. A semiconductor element (hereinafter, referred to as a chip) 101 is formed on a die pad 102 by using an Au-Si eutectic method or a silver paste. The chip-side heat radiating plate 107 made of aluminum or copper is adhered to the chip surface using an adhesive 106, and the die pad-side heat radiating plate 108 is brought into direct contact with the back surface of the die pad and resin-sealed. Therefore, the thermal resistance is greatly reduced.

FIG. 7A is an example of a cross-sectional view of a semiconductor device disclosed in the prior art 2.
05b, the upper and lower heat sinks 205a,
205b is joined by a plurality of connecting pins 206 arranged on a heat sink. FIG. 7B shows a method of fixing the upper heat sink 205a, the lead frame 204, and the lower heat sink 205b of the semiconductor device. Gold wire 205
After the connection is completed, the convex pin 206 of the lower surface heat sink 205b is
The upper and lower heat radiating plates 205a and 205b are fixedly connected to the concave pins 206a of the upper heat radiating plate 205a. FIG.
FIG. 3C is a cross-sectional view when the semiconductor device is sealed. The upper and lower heat sinks 205a and 205b are in contact with the upper mold 207a and the lower mold 207b of the sealing mold, respectively, and are fixed in the mold at the time of mold clamping.

In a conventional manufacturing method of a general resin-encapsulated semiconductor device including the above-described resin-encapsulated semiconductor device, a method of sealing a lead frame on which a chip is mounted with a resin is performed by using a method of sealing each semiconductor chip. The lead frame is clamped with a sealing mold in which a predetermined resin sealing region (hereinafter, referred to as a cavity) corresponding to the portion is formed, a sealing resin is injected,
Resin sealing was performed.

FIG. 8 is a view for explaining a conventional method of manufacturing a resin-encapsulated semiconductor device. A chip 3 is mounted, and external connection electrodes (not shown) of the chip 3 and internal terminals are connected by thin metal wires. FIG. 6 is a partial cross-sectional view showing a state after the lead frame 10 is clamped by an upper mold 70 and a lower mold 80 of a sealing device (not shown), and a sealing resin 7 is injected.

FIGS. 9A and 9B are schematic plan views of these dies as viewed from the cavity forming surface side. FIGS. 9A and 9B show an upper die 70 and a lower die 80, respectively. 10 is the same as FIG.
9 (a) is a schematic partial cross-sectional view centering on cavities 71 and 81 which are main parts of the mold shown in FIG. 9 (a).
9B is a cross-sectional view taken along the line P ′, and FIG.
It is sectional drawing which followed the -Q 'line.

[0008]

The resin-encapsulated semiconductor device disclosed in the above-mentioned known example 1 has a chip surface and a radiator plate bonded to each other with an adhesive, and the semiconductor device disclosed in the known example 2 has a chip back surface. Are directly bonded to the heat radiating plate, so that each has an effective structure for reducing the thermal resistance.

However, these require additional steps such as bonding the chip surface and the heat radiating plate with an adhesive, and bonding the chip back surface directly to the heat radiating plate (known example 1), and require a dedicated lead frame (known example). 2) etc., productivity is not always considered.

Also, there is a problem that it is not easy to cope with the recent thinning of the resin-encapsulated semiconductor device due to its structure.

Further, in the conventional manufacturing method of a general resin-sealed type semiconductor device including the semiconductor devices disclosed in the known examples 1 and 2, the sealing dies 70 and 80 correspond to a predetermined resin-sealed shape. It is necessary to precisely process and manufacture the cavities 71 and 81 to be formed and the runner portion 85 serving as an injection path of the sealing resin.
When manufacturing a semiconductor device having a new resin sealing size, it takes several months to design and manufacture the sealing dies 70 and 80, which hinders the development period from the preparation period of other materials.
Further, if the resin sealing shape differs depending on the semiconductor device, the cavities 71, 81 of the sealing molds 70, 80 differ, and it is impossible to share the sealing mold between semiconductor devices having different resin sealing shapes. It is necessary to prepare sealing molds 70 and 80 for each shape.

An object of the present invention is to provide a resin-encapsulated semiconductor device that can reduce thermal resistance while using an existing lead frame, is easy to manufacture, and can be made thinner, and a method of manufacturing the same. is there.

[0013]

The resin-encapsulated semiconductor device of the present invention has at least a first main surface embedded in a sealing resin and a second main surface opposite to the first main surface. Are provided on the upper surface and the lower surface of the sealing resin body, respectively, and the sealing plate is formed integrally with the sealing plate on the first main surface, and the sealing plate in the resin sealing region It has a support protrusion that comes into contact with a predetermined terminal.

At this time, the terminal with which the support protrusion contacts is
The chip mounting portion can be any of a mounting portion support terminal, an unused terminal, a ground terminal, and a power supply terminal for connecting to the frame portion of the lead frame.

Further, the sealing plate can be formed of either an iron-based alloy material or a copper-based alloy material containing at least Kovar and 42 alloy.

In the method of manufacturing a resin-encapsulated semiconductor device according to the present invention, a predetermined semiconductor chip is mounted on a predetermined lead frame, and an external connection electrode of the chip and each internal terminal of the lead frame are connected to a metal. The mounted frame manufacturing process of manufacturing a mounted lead frame by connecting with a thin wire, and the same planar shape as the sealing resin main body portion for sealing the chip and at the same pitch as the chip mounting portion arrangement pitch of the lead frame At least a sealing plate that is arranged, and a frame portion that supports the sealing plate via a connecting portion and is thicker than the sealing plate, and includes a clamp for each of an upper mold and a lower mold of a sealing device. A sealing plate frame preparing step of preparing a first sealing plate frame and a second sealing plate frame having a flat surface in contact with a surface, and the lower mold A frame loading step of laminating and loading the second sealing plate frame, the mounted lead frame, and the first sealing plate frame in this order from the lower mold side, and loading the lower mold. A resin sealing step of injecting a sealing resin into a predetermined region including the chip mounting portion of the mounted lead frame by clamping with the upper mold from above the first sealing plate frame thus formed. It comprises at least.

At this time, at least one of the first sealing plate frame and the second sealing plate frame is
It is desirable to have a runner part for injecting resin.

Further, the sealing plate has a supporting projection of a predetermined height integrally formed with the sealing plate on the first main surface side formed of metal and embedded in the resin. It is desirable.

Further, it is preferable that the support projection is a terminal of the semiconductor device using the sealing plate, and is arranged at a position where it comes into contact with the terminal which is allowed to be electrically short-circuited with each other.

Further, the sealing plate frame can be formed of either an iron-based alloy material or a copper-based alloy material containing at least Kovar and 42 alloy.

[0021]

Next, the present invention will be described with reference to the drawings.

FIGS. 1A and 1B are views for explaining a resin-sealed semiconductor device according to a first embodiment of the present invention. FIG. 1A is a schematic plan view, and FIGS. It is a typical sectional view of a section which met an AA 'line and a BB' line of (a), respectively.

Referring to FIG. 1, a semiconductor device 1 according to the present embodiment has a chip 3 fixed to a chip mounting portion 13 with a silver paste or the like not shown, an external terminal 11, and a chip 3 not shown. A thin metal wire 5 such as a gold wire (Au wire) connecting the external connection electrode and the internal terminal 12 connected to the external terminal 11, and a resin for sealing a predetermined area including the chip 3, the metal thin wire 5 and the internal terminal 12. 7 and sealing resin body 2
Have sealing plates 22 and 32 formed of, for example, Kovar on the upper and lower surfaces of the sealing plate. These sealing plates 22 and 3
2 has a planar shape substantially the same as the shape of the sealing resin body 2 of the semiconductor device 1, the first main surface is embedded in the resin 7, and the second main surface on the opposite side is exposed to the outside. I have. Support projections 23 and 33 are formed integrally with the sealing plates 22 and 32 at predetermined positions on the first main surfaces of the sealing plates 22 and 32 so as to face predetermined terminals from above and below. Is in contact with In the present embodiment, the support protrusions 23 and 33 are formed such that the predetermined terminal is the mounting portion support terminal 15 for connecting the chip mounting portion 13 to a frame portion of a lead frame (not shown).

The semiconductor device 1 according to the present embodiment has a thickness (t1) of about 0.45 mm by etching a Kovar base material having a predetermined shape of about 0.25 to 0.3 mm except for a supporting terminal portion. If a sealing plate 22 having a thickness (t2) of about 0.15 to 0.2 mm and a lead frame having a thickness (s) of about 0.1 mm is used, the total thickness can be reduced to about 1 mm. it can. Therefore, although the sealing plates 22 and 32 provided on the upper and lower surfaces of the semiconductor device 1 are not in direct contact with the chip 3 or the chip mounting portion 13, both are located at positions very close to each other, and Because one surface is entirely exposed to the outside,
The heat generated in the chip 3 can be efficiently released to the outside, and the thermal resistance of the semiconductor device 1 can be reduced.

When the supporting projections 23 and 33 are in contact with the fixed potential terminals of the semiconductor device, the sealing plates 22 and 32 made of metal cover the entire surface of the chip 3 from above and below. The effect that the influence of electromagnetic wave noise and the noise radiation from the chip 3 can be suppressed is also obtained.

Next, a second embodiment of the present invention will be described.

FIG. 2 is a flowchart schematically showing a method of manufacturing the resin-encapsulated semiconductor device of the present embodiment. The method for manufacturing a resin-sealed semiconductor device according to the present embodiment can be applied to a resin-sealed semiconductor device including the semiconductor device 1 according to the first embodiment.

FIG. 1 is a view showing an example of a completed semiconductor device manufactured by the manufacturing method of the present embodiment.

FIGS. 3A and 3B are views for explaining an example of a first sealing plate frame used in the manufacturing method of the present embodiment. FIG. 3A is a schematic schematic plan view seen from the surface on which the support protrusion is formed. Figures (b) and (c) show C1-C of (a), respectively.
It is sectional drawing of the cross section along 1 'line and DD' line.

FIGS. 4A and 4B are views for explaining an example of a second sealing plate frame used in the manufacturing method of the present embodiment. FIG. 4A is a schematic schematic plan view seen from the support projection forming surface side. FIG. 4B is a cross-sectional view of a cross section taken along line C2-C2 ′ of FIG.

FIG. 5 is a view for explaining the manufacturing method of the present embodiment. FIG. 5 is a cross-sectional view taken along a line corresponding to line EE ′ in FIG. It is a fragmentary sectional view showing typically.

Referring to FIG. 2, in the manufacturing method of the present embodiment, a predetermined semiconductor chip is mounted on a predetermined lead frame, and an external connection electrode of the chip is connected to each internal terminal of the lead frame. A mounted frame manufacturing step S1 for manufacturing a mounted lead frame, and encapsulation having at least the same planar shape as the encapsulating resin main body for encapsulating the chips and arranged at the same pitch as the chip mounting portion arrangement pitch of the lead frame. A first plate supporting the plate and the sealing plate via a connecting portion and having a frame portion which is thicker than the sealing plate, and having a flat surface which comes into contact with a clamp surface of each of an upper mold and a lower mold of the sealing device; And a sealing plate frame preparing step S2 for preparing a second sealing plate frame
And a frame loading step S3 of stacking and loading the second sealing plate frame, the mounted lead frame, and the first sealing plate frame in this order from the lower mold side in the lower mold of the sealing device. A resin encapsulating step S4 of injecting an encapsulating resin into a predetermined area including a chip mounting portion of a mounted lead frame by clamping the first encapsulating plate frame mounted on the lower die with the upper die from above. And at least.

Next, the operation of this embodiment will be described with reference to FIGS.

First, the mounted lead frame manufacturing process S
In step 1, a predetermined chip 3 is mounted on a predetermined lead frame 10, and an external connection electrode (not shown) of the chip is connected to each internal terminal of the lead frame by a thin metal wire 5, and the mounted lead frame is connected. 10 is manufactured. The manufacture of the mounted lead frame 10 can be performed in exactly the same manner as in the case of a general resin-sealed semiconductor device.

In addition, the mounting lead frame manufacturing process S
In parallel with or before step 1, in a sealing plate frame preparing step S2, a first sealing plate frame 20 and a second sealing plate frame 30 corresponding to the mounted lead frame 10 are prepared.

Here, the sealing plate frame which is the most characteristic element of the present embodiment will be described in detail by taking the first sealing plate frame 20 as an example.

Referring to FIG. 3, the sealing plate frame 20 used in the manufacturing method of the present embodiment includes a frame portion 21, a plurality of sealing plates 22 arranged at a predetermined pitch, and each sealing plate 22. A connecting portion 24 for connecting and supporting the frame portion 21 to the frame portion 21, a runner portion 27 serving as a resin flow path at the time of resin injection, and a sealing (not shown) which passes through the frame portion 21 at a predetermined position of the frame portion 21. A resin injection port 28 for guiding the resin from the resin injection port of the mold to the runner portion 27
And a slit 29 surrounding the periphery of each sealing plate 22 except for the connecting portion 24. Also,
On the first main surface of each sealing plate 22, a support projection 23 is formed at a predetermined position. The sealing plate 22
The second main surface opposite to the first main surface is flat including the frame portion 21 and is in contact with the clamp surface of the sealing mold. That is, the contact surface 25 where the sealing plate frame 20 contacts the clamping surface of the sealing mold is the resin injection port 2.
8, except for the slit 29, it is flat.

The shape and size of the sealing plate 22 are determined according to the shape and size of the sealing resin body 2 of the semiconductor device to be manufactured, and the arrangement pitch is the arrangement of the chip mounting portions of the lead frame used for manufacturing. Make it the same as the pitch. Usually, they are arranged so that the center of the chip mounting portion and the center of the sealing plate coincide.

The supporting projections 23 formed on each sealing plate 22 are terminals of a lead frame used in the manufacture of a semiconductor device which have no electrical problem even if the sealing plate 22 contacts. For example, it is provided at a position in contact with any of unused terminals, a mounting portion support terminal for connecting the chip mounting portion to the frame portion, a ground terminal, a power terminal, and the like. (However, it goes without saying that the plurality of support projections 23 formed in the same sealing plate 22 cannot be simultaneously brought into contact with terminals of different potentials.) The sealing plate frame 20 Has a predetermined thickness (t) of the same size as the lead frame used for manufacturing, for example, made of Kovar.
The base material of 1) is prepared, and a resist for preventing etching is applied to both surfaces, and the sealing plate 22 excluding the support protrusions 23 is prepared.
The region, the connecting portion 24, the runner portion 27, the resin injection port 28 on the first main surface, and the resist in the slit 29 are removed, and the second main surface 26 contacting the mold on the opposite side is made of resin. The resist can be formed by removing the resist in the portions of the inlet 28 and the slit 29, etching a predetermined amount (d) from both sides, and then removing the resist. The base material in the above-described region of the sealing plate 22 is etched by a predetermined amount from the first main surface side, and this portion plays the role of the cavities 71 and 81 of the conventional sealing mold.
Note that the thickness (t2) of the sealing plate 21 is the thickness t1 of the base material.
Although it is considerably thinner than the above, since it has the support projection 23, it is not deformed in the resin sealing step or the like, and a resin injection space can be secured. This sealing plate 21
Is preferably about (t1) / 3, but there is no particular problem if it is within the range of (t1) / 4 to (t1) / 2.

The second sealing plate frame 30 is
Other components are the same as those of the first sealing plate frame 20 except that the first sealing plate frame 20 has no runner portion and no resin injection port, and a description thereof will be omitted.

Next, in the frame loading step S3, the second sealing plate frame 30 is brought into contact with the lower mold 50 of the sealing device (not shown) such that the contact surface 35 contacts the clamp surface of the lower mold 50. , And the mounted lead frame 10 prepared in advance is loaded thereon. The first sealing plate frame 20 is further placed thereon, and the contact surface 25 is exposed to form the support protrusion 23. The lead frame is loaded so that the first main surface faces the mounted lead frame 10.

Next, in a resin sealing step S4, the upper mold 40 is brought into contact with the contact surface 25 of the first sealing plate frame 20, and the whole is clamped. The resin is injected into a predetermined region including the region 13.

Next, a sealing plate frame cutting step S5
Then, the resin-sealed lead frame 10 integrated with the first and second sealing plate frames 20 and 30 is released from the mold, and the first and second sealing are performed by a cutting device (not shown). The connecting portions 24 and 34 of the plate frames 20 and 30 are cut, and the frame portions 2 other than the sealing plates 22 and 32 are cut.
1, 31 are removed.

Thereafter, steps such as lead cutting and lead molding can be performed in exactly the same manner as a general method of manufacturing a resin-encapsulated semiconductor device, and a detailed description thereof will be omitted.

As described above, according to the method for manufacturing a resin-encapsulated semiconductor device of the present embodiment, a thin encapsulation plate made of metal is provided on the upper and lower surfaces of the encapsulation resin body while using an existing lead frame. Therefore, a resin-encapsulated semiconductor device having excellent heat dissipation properties can be easily manufactured.

In the method of manufacturing a resin-encapsulated semiconductor device according to this embodiment, the first and second encapsulation plate frames 2 are used.
By using 0, 30 the upper mold 40 and the lower mold 5
The structure of 0 can be made very simple. That is, the cavities 71, 81 and the runner portion 75 provided in the conventional sealing dies 70, 80 are formed by the sealing plates 22, 3 of the first and second sealing plate frames 20, 30.
The two portions and the runner portion 27 of the first sealing plate frame play that role, and the contact surfaces of the upper mold 40 and the lower mold 50 with the first and second sealing plate frames 20, 30 are The semiconductor device may be flattened regardless of the resin sealing shape of the semiconductor device to be manufactured. The clamp surfaces of the upper mold 40 and the lower mold 50 are respectively connected to the first and second sealing plate frames 20 and
The frame portions 21 and 31 can clamp the external terminal portions of the lead frame 10 by contacting the contact surfaces 25 and 35 of the respective 30 and pressing the entire surface uniformly.

That is, even if the resin sealing shape of a semiconductor device to be manufactured changes, only by preparing a sealing plate frame in accordance with the resin sealing shape, an expensive sealing mold can be shared. Significant reduction in capital investment is possible.

Further, when manufacturing a new semiconductor device having a new resin-encapsulated shape, it takes several months to design and manufacture an encapsulation die, and the development period is hindered by the preparation period of other materials. However, processing of the sealing plate frame used in the manufacturing method of the present embodiment does not require a period as long as a sealing mold, so that a new product and its evaluation sample can be manufactured and shipped in a short time, There is also an effect that the development period can be shortened.

For a lead frame on which a chip is mounted, an existing lead frame can be applied as it is by designing a sealing plate frame in accordance with the product arrangement and the position of a resin injection port. No need to do.

It should be noted that the present invention is not limited to the above-described embodiment, and it is needless to say that various modifications can be made within the scope of the invention.

For example, in the first embodiment, the example in which the sealing plate 22 is formed of Kovar has been described. However, the present invention is not limited to this, and an iron-based material such as 42 alloy (42% nickel-iron alloy) may be used. The sealing plate may be formed using an alloy material, a copper-based alloy material, or the like.

Also, in the second embodiment, the example in which the first and second sealing plate frames 20, 30 are formed of Kovar has been described. However, the present invention is not limited to this.
The sealing plate frame may be formed using an iron-based alloy material such as two alloys or a copper-based alloy material.

Although the first sealing plate frame 20 and the second sealing plate frame 30 are configured differently, the runner portion and the resin injection port are also provided at predetermined positions of the second sealing plate frame 30. If the arrangement of the sealing plates on the sealing plate frame and the arrangement of the support projections on the sealing plate are mirror-symmetrical, the second
The first sealing plate frame 20 can be used instead of the sealing plate frame 30 described above. From the viewpoint of material procurement and management, it is desirable to be able to configure with one type of sealing plate frame.

Also, the thickness of the first sealing plate frame 20 and the second sealing plate frame 30 is changed without changing the thickness of the entire semiconductor device 1 so that the first sealing plate frame 20 is opposed to the chip surface. It is also possible to make the thickness of the stop plate frame 20 thicker and make the second sealing plate frame 30 thinner by that much, so that the distance between the thin metal wire and the first sealing plate frame 20 can be increased. It is.

Further, the connection between the external connection electrode of the chip and each of the internal terminal portions of the lead frame is replaced by a thin metal wire,
TAB (Tape Automated Bondin)
ng).

[0056]

As described above, the resin-encapsulated semiconductor device of the present invention is thin and has excellent heat dissipation by providing the encapsulation plate made of metal on the upper and lower surfaces of the encapsulation resin body. The effect is obtained.

The method of manufacturing a resin-encapsulated semiconductor device according to the present invention has an effect that a thin, resin-encapsulated semiconductor device excellent in heat dissipation can be easily manufactured using an existing lead frame. .

Further, even if the resin sealing shape of the semiconductor device is different, an expensive sealing mold can be used in common, so that the capital investment can be greatly reduced and the development period of a new product can be shortened.

[Brief description of the drawings]

FIGS. 1A and 1B are views for explaining a resin-sealed semiconductor device of the present invention, wherein FIG. 1A is a schematic plan view, and FIGS.
(C) is a typical sectional view of a section taken along the line AA 'and the line BB' of (a).

FIG. 2 is a flowchart schematically showing a method of manufacturing a resin-sealed semiconductor device according to the present invention.

3A and 3B are diagrams for explaining a first sealing plate frame used in the method of manufacturing a resin-sealed semiconductor device according to the present invention, and FIG. 3A is a schematic diagram viewed from a support protrusion forming surface side; (B), (c) is C1-C of (a), respectively.
It is sectional drawing of the cross section along 1 'line and DD' line.

4A and 4B are views for explaining a second sealing plate frame used in the method of manufacturing a resin-sealed semiconductor device according to the present invention, wherein FIG. 4A is a schematic diagram viewed from the side where a support protrusion is formed; FIG. 2B is a plan view, and FIG. 2B is a cross-sectional view taken along line C2-C2 ′ of FIG.

FIG. 5 is a view for explaining the method of manufacturing the resin-encapsulated semiconductor device according to the present invention, and shows a position corresponding to the line EE ′ in FIG. 3 at a stage when the sealing resin is injected by the sealing device. 3 is a partial cross-sectional view schematically showing a cross section of FIG.

FIG. 6 is a sectional view of a resin-sealed semiconductor device disclosed in Japanese Patent Application Laid-Open No. 61-166051.

FIG. 7 is a sectional view of a semiconductor device disclosed in Japanese Patent Application Laid-Open No. 4-27145.

FIG. 8 is a view for explaining a conventional method for manufacturing a resin-encapsulated semiconductor device.

FIGS. 9A and 9B are schematic plan views of a mold used in a conventional method for manufacturing a resin-sealed semiconductor device, as viewed from a sealing mold forming surface side, wherein FIGS. It is a mold.

10 is a schematic partial sectional view centering on a cavity which is a main part of the mold of FIG. 9; FIG.
FIG. 10B is a cross-sectional view taken along the line −P ′, and FIG. 9B is a cross-sectional view taken along the line QQ ′ in FIG.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Semiconductor device 2 Sealing resin main body part 3 Chip 5 Fine metal wire 7 Resin 10 Lead frame 11 External terminal 12 Internal terminal 13 Chip mounting part 15 Mounting part support terminal 20 First sealing plate frame 21, 31 Frame part 22, 32 Sealing plates 23, 33 Supporting projections 24, 34 Connecting portions 25, 35 Abutment surface 27 Runner portion 28 Resin injection port 29 Slit 30 Second sealing plate frame 40, 70 Upper mold 50, 80 Lower mold 71 , 81 cavities

Claims (9)

[Claims] 1. A resin-sealed semiconductor device, wherein at least a first main surface is embedded in a sealing resin and the first main surface is
A sealing plate having a second main surface opposite to the main surface of the sealing resin is exposed on each of the upper surface and the lower surface of the sealing resin body, and the sealing plate is provided on the first main surface. And a supporting projection formed integrally with the semiconductor device and in contact with a predetermined terminal in the resin sealing region. 2. The terminal according to claim 1, wherein the terminal with which the support protrusion contacts is any one of a mounting portion support terminal for connecting the chip mounting portion to a frame portion of the lead frame, an unused terminal, a ground terminal and a power supply terminal. Resin-sealed semiconductor device. 3. The resin-sealed semiconductor device according to claim 1, wherein the sealing plate is formed of one of an iron-based alloy material including Kovar 42 alloy and a copper-based alloy material. 4. A method for manufacturing a resin-encapsulated semiconductor device, comprising mounting a predetermined semiconductor chip on a predetermined lead frame, and connecting an external connection electrode of the chip and each internal terminal of the lead frame to a thin metal wire. And a mounting frame manufacturing process for manufacturing a mounted lead frame, and the same planar shape as the sealing resin main body portion for sealing the chip and arranged at the same pitch as the chip mounting portion arrangement pitch of the lead frame. And at least a frame portion that supports the sealing plate via a connecting portion and is thicker than the sealing plate, and a clamp surface of each of an upper mold and a lower mold of the sealing device. A sealing plate frame preparing step of preparing a first sealing plate frame and a second sealing plate frame having a flat surface that comes into contact with
A frame loading step of stacking and loading the second sealing plate frame, the mounted lead frame, and the first sealing plate frame in this order from the lower mold side on the lower mold; Resin sealing in which a sealing resin is injected into a predetermined region including the chip mounting portion of the mounted lead frame by clamping the upper sealing die from above the second sealing plate frame loaded in the lower die. A method of manufacturing a resin-encapsulated semiconductor device, which comprises at least a stopping step. 5. The first sealing plate frame or the second sealing plate frame.
5. The method for manufacturing a resin-encapsulated semiconductor device according to claim 4, wherein at least one of the sealing plate frames includes a runner portion for injecting a resin. 6. The resin-encapsulated semiconductor device according to claim 4, wherein the encapsulation plate is made of metal, and has a support protrusion having a predetermined height on the first main surface side embedded in the resin. Manufacturing method. 7. The method according to claim 6, wherein the sealing plate and the support projection are formed integrally. 8. A semiconductor device using a sealing plate, wherein the supporting projection is located at a position in contact with the terminal which is allowed to be electrically short-circuited with each other.
The manufacturing method of the resin-sealed semiconductor device according to the above. 9. The sealing plate frame is made of Kovar, 4
9. The method of manufacturing a resin-sealed semiconductor device according to claim 4, wherein the semiconductor device is formed of one of an iron-based alloy material including two alloys and a copper-based alloy material.