JP2001244615A - Circuit board, semiconductor device using the same and manufacturing method therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To solve a problem of a positional deviation between bump electrodes and a board lead part, by narrowing a pitch between electrodes, in mounting a semiconductor element and a circuit board using the bump electrodes. SOLUTION: The circuit board comprises a lead 2 connected with bump electrodes 5 provided on the semiconductor element 4 on an upper surface of a board base material 1. In this case, the part 2 has a structure having recesses 7 at positions connected to bumps of the element 4 in such a manner that the end protrusions 5a of the electrodes 5 are introduced into the recesses 7 and aligned therein. Thus, when the electrodes 5 of the element 4 are introduced into the recesses 7 of the part 2 and connected, connecting positions are held and a connecting area is improved. And, a good electric connection can be maintained even in the case of connecting at a narrow pitch.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor assembly technology using flip chip mounting, and more particularly to a wiring board having leads and wiring suitable for flip chip mounting, a semiconductor device using the same, and a method of manufacturing the same. Things.

[0002]

2. Description of the Related Art A conventional lead shape of a wiring board will be described below with reference to FIGS. FIG. 13 is a cross-sectional view showing the shape of a lead portion formed by etching, and FIG. 14 is a cross-sectional view showing the shape of a lead portion formed by an additive method.

[0003] First, as shown in FIG.
A lead portion 2 made of a conductor such as copper (Cu) is formed thereon, and the lead portion 2 is formed in a planar shape.

[0005] As shown in FIG.
A lead portion 2 made of a conductor such as copper (Cu) is formed thereon via an insulating resist resin 3, and the lead portion 2 is formed in a planar shape.

As described above, the shape of the lead portion of the conventional wiring board is slightly different depending on the forming method, but basically, the connection portion is formed in a planar shape.

Next, a connection state between a semiconductor element and a lead portion of a wiring board in a semiconductor device using a conventional wiring board will be described with reference to the drawings. FIG. 15 is a sectional view showing a connection state between a semiconductor element of a conventional semiconductor device and a lead portion of a wiring board.

As shown in FIG. 15, a semiconductor element 4 is connected via a bump electrode 5 to a lead portion 2 provided on an upper surface of a substrate base material 1 constituting a wiring substrate. is there. Further, a sealing resin 6 is interposed between the semiconductor element 4 and the substrate base material 1 of the wiring board, and both are fixed and held to maintain electrical connection.

A conventional method of manufacturing a semiconductor device using a wiring board involves positioning a bump electrode of a semiconductor element and a lead portion of the wiring board so as to face each other, and connecting the bump electrode to the lead portion of the wiring board. That is, the two are fixedly held by the sealing resin to maintain the electrical connection.

[0009]

However, in the above-mentioned conventional wiring board, there has been a problem of a displacement between the bump electrode and the lead portion due to a recent narrow pitch of the lead portion and the bump electrode.
In addition, there is a problem that it is difficult to maintain an electrical connection due to an increase in connection resistance due to a decrease in a bonding area between the bump electrode and the lead portion, and there is a problem that it is difficult to cope with the problem.

FIG. 16 is a cross-sectional view showing a conventional connection state between a wiring board and a semiconductor element. As shown in the drawing, the lead portion 2 of the substrate base material 1 of the wiring board and the narrowness of the bump electrode 5 of the semiconductor element 4 are narrowed. Due to the pitch, displacement occurs in the connection between the bump electrode 5 and the lead portion 2. Further, there is a possibility that a displacement may occur due to a stress due to thermal expansion of the sealing resin 6 interposed in the gap between the semiconductor element 4 and the substrate base material 1 of the wiring board.

FIG. 17 is an enlarged sectional view showing a connection state between a conventional wiring board and a semiconductor element.
FIG. 17A shows a connection state when the lead pitch is 80 [μm] pitch, and FIG. 17B shows a connection state when the lead pitch is 60 [μm] pitch. As shown in FIG. 17A, when the lead portions 2 of the substrate base material 1 of the wiring board and the bump electrodes 5 of the semiconductor element 4 have a pitch of 80 [μm], the connection between the bump electrodes 5 and the lead portions 2 is made. In FIG. 17B, while the connection region C1 at the tip of the bump electrode 5 is φ30 [μm], as shown in FIG.
In the connection between the lead electrode 2 and the lead portion 2, the connection region C1 at the tip of the bump electrode 5 becomes φ20 [μm], and the connection resistance increases due to a decrease in the bonding area.

SUMMARY OF THE INVENTION The present invention has as its object to eliminate the positional displacement and the reduction of the bonding area in the connection between the bump electrode of a semiconductor element and the lead portion of a wiring board, and a flip chip mounting which can cope with a narrow pitch. It is an object to provide a wiring board for use, a semiconductor device using the same, and a method of manufacturing the same.

[0013]

To solve the above-mentioned conventional problems, a wiring board according to the present invention has the following configuration. That is, a wiring board having a lead portion to which a bump electrode provided on a semiconductor element is connected, wherein the lead portion has a concave portion at a position where the bump electrode of the semiconductor element is connected, and the bump electrode is It is a wiring board having a structure to be aligned.

Specifically, the lead portion is a wiring board provided with a plurality of concave portions.

Further, the wiring board of the present invention is a wiring board having a lead portion to which a bump electrode provided on a semiconductor element is connected, wherein the lead portion is located at a position where the bump electrode of the semiconductor element is connected. A wiring substrate having a groove and having a structure in which the bump electrodes are aligned.

Specifically, the lead portion is a wiring board provided with a plurality of grooves.

Further, the wiring board has a lead portion on the upper surface,
This is a single-layer or multi-layer wiring board constituting a semiconductor package having an electrode for external connection on the bottom surface.

A semiconductor device according to the present invention is a semiconductor device in which a semiconductor element is connected to a lead portion provided on an upper surface of a wiring board via a bump electrode, wherein the bump electrode of the semiconductor element is connected to the wiring board. The semiconductor device is positioned and connected to the concave portion of the lead portion.

Specifically, this is a semiconductor device in which a protruding end portion of a bump electrode of a semiconductor element is fitted and connected to a concave portion of a lead portion.

The semiconductor device according to the present invention is a semiconductor device in which a semiconductor element is connected to a lead portion provided on an upper surface of a wiring board via a bump electrode, wherein the bump electrode of the semiconductor element is connected to the wiring. The semiconductor device is aligned and connected to the groove of the lead portion of the substrate.

More specifically, this is a semiconductor device in which a tip end of a bump electrode of a semiconductor element is fitted and connected to a groove of a lead portion.

Further, the present invention is a semiconductor device in which a resin layer is provided in a gap between a semiconductor element and a wiring board.

The method of manufacturing a semiconductor device according to the present invention is a wiring board having a lead portion to which a bump electrode provided on a semiconductor element is connected, wherein the lead portion is connected to a bump electrode of the semiconductor element. A step of preparing a wiring board having a concave portion at a position and having a structure in which the bump electrodes are aligned; a step of providing a resin on the wiring board; and a semiconductor element provided with the bump electrodes Making the bump electrodes face the lead portions of the wiring board, fitting the bump electrodes into the recesses of the lead portions of the wiring board, aligning the bump electrodes, and connecting the bump electrodes and the lead portions. This is a method for manufacturing a semiconductor device.

Specifically, the bump electrodes of the semiconductor element provided with the bump electrodes are opposed to the leads of the wiring board, and the bump electrodes are fitted into the recesses of the leads of the wiring board and aligned. In the step of connecting the bump electrode and the lead portion, pressurizing and heating the semiconductor element or the wiring board together with the intervening resin,
A method for manufacturing a semiconductor device in which the bump electrode is fitted into a recess of a lead portion of the wiring board and connected.

According to a method of manufacturing a semiconductor device of the present invention, there is provided a wiring board having a lead portion connected to a bump electrode provided on a semiconductor element, wherein the lead portion is connected to a bump electrode of the semiconductor element. Providing a wiring board having a groove at a predetermined position and having a structure in which the bump electrodes are aligned, a step of providing a resin on the wiring board, and a semiconductor provided with the bump electrodes The bump electrode of the element and the lead portion of the wiring board are opposed to each other,
A step of fitting the bump electrode into a groove of a lead portion of the wiring substrate, aligning the bump electrode, and connecting the bump electrode and the lead portion.

Specifically, the bump electrodes of the semiconductor element provided with the bump electrodes are opposed to the lead portions of the wiring board, and the bump electrodes are fitted into the grooves of the lead portions of the wiring board and aligned. In the step of connecting the bump electrode and the lead portion, pressurizing and heating the semiconductor element or the wiring board together with the intervening resin,
A method of manufacturing a semiconductor device in which the bump electrode is fitted into a groove of a lead portion of the wiring substrate and connected.

The step of providing a resin on the wiring substrate is a method of manufacturing a semiconductor device, which is a step of attaching a resin sheet.

The step of providing a resin on the wiring board is a method of manufacturing a semiconductor device, which is a step of supplying a liquid resin.

As described above, when the bump electrode of the semiconductor element is connected to the concave portion or the groove of the lead portion by the shape of the concave portion or the groove formed in the lead portion of the wiring board, the bonding position is maintained and the connection area is reduced. Improvement is achieved, and good electrical connection can be maintained even at a narrow pitch junction. Furthermore, since the bump electrode of the semiconductor element is connected to the recess and groove of the lead by connecting it, the misalignment between the bump electrode and the lead on the substrate due to the thermal stress of the interposed resin is prevented. it can.

[0030]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, an embodiment of a wiring board, a semiconductor device using the same, and a method of manufacturing the same according to the present invention will be described with reference to the drawings.

First, a first embodiment of the present invention will be described.

FIG. 1 is a plan perspective view showing a wiring board of the present embodiment.

As shown in FIG. 1, the wiring board of this embodiment has a lead portion 2 on the upper surface of a substrate base material 1 to which a bump electrode provided on a semiconductor element is connected. Reference numeral 2 denotes a structure having individual recesses 7 at positions where the bumps of the semiconductor element are connected, and the tip projections of the bump electrodes respectively enter the recesses 7 and are aligned.

In the wiring board of this embodiment, the shape of the concave portion formed in the lead portion of the wiring substrate allows the bump electrode of the semiconductor element, particularly the tip end protrusion portion, to enter the concave portion of the lead portion and to be connected to the joint position. The holding and the connection area are improved, and good electrical connection can be maintained even in a narrow-pitch joint.

As shown in the perspective view of the lead portion in FIG. 2, in this embodiment, as shown in FIG. 2A, the concave portion of the lead portion 2 is a conical concave portion 7a in a sectional direction. As another shape of the concave portion, an elliptical cone-shaped concave portion 7b as shown in FIG. 2B, a pyramid-shaped concave portion 7c as shown in FIG. 2C, or FIG. As shown, a rectangular pyramid-shaped recess 7d may be used. The same effect is obtained in any of the concave shapes.

The wiring board according to the present embodiment has a lead portion 2 on the upper surface and an electrode (not shown) for external connection on the lower surface.
Is a wiring board made of a single-layer or multilayer insulating substrate base material 1 constituting a semiconductor package having
The same effect can be obtained even when the present invention is applied to wiring leads of a normal printed circuit board to be flip-chip mounted.

Next, the semiconductor device of this embodiment and a method of manufacturing the same will be described.

FIG. 3 is a sectional view of each step showing a semiconductor device using the wiring board of this embodiment and a method of manufacturing the same. FIG. 3 shows a cross section near the concave portion of the lead portion.

First, as a pre-process, as shown in FIG.
A wiring board having a lead portion to which a bump electrode provided on a semiconductor element is connected, wherein a lead portion of a substrate base material has a concave portion at a position where the bump electrode of the semiconductor element is connected, and the bump electrode is positioned A wiring board having a structure to be fitted is prepared, and an insulating resin sheet is attached on the wiring board. In addition, a semiconductor element in which a bump electrode having a protrusion is formed on an electrode pad is prepared.

As shown in FIG. 3A, the semiconductor element 4 provided with the bump electrode 5 having the tip protrusion 5a is provided.
The bump electrode 5 and the concave portion 7 of the lead portion 2 of the substrate base material 1 constituting the wiring board are opposed to each other via an insulating resin sheet 8 to perform positioning in the XY directions.

Next, as shown in FIG. 3B, the tip protrusion 5a of the bump electrode 5 is fitted into the concave portion 7 of the lead portion 2 and is positioned and fixed, and the bump electrode 5 of the semiconductor element 4 and the lead portion are fixed. 2 is connected. At this time, the semiconductor element 4 or the substrate base material 1 together with the interposed resin sheet 8 are heated under pressure by a bonding device to connect the bump electrodes 5 to the lead portions 2.
In the recess 7 for connection. The resin sheet 8 is pressed by the bump electrode 5 so that
The bump electrode 5 and the lead portion 2 are electrically connected to each other because they protrude from the periphery of the concave portion 7.

Through the above-described steps, as shown in FIG. 3C, the semiconductor element 4 is connected via the bump electrode 5 to the lead portion 2 provided on the upper surface of the substrate base material 1 of the wiring board. A semiconductor device in which a bump electrode 5 of a semiconductor element 4 is positioned and connected to a concave portion 7 of a lead portion 2, and a resin layer 9 is provided in a gap between the semiconductor element 4 and a substrate base material 1. Get the device. In the present embodiment, the tip protrusion 5a of the bump electrode 5 of the semiconductor element 4 is fitted and connected to the recess 7 of the lead 2.

In the present embodiment, the resin sheet 8 is adhered to the substrate in order to form the resin layer 9 in the gap between the semiconductor element 4 and the substrate base material 1. You may supply by potting etc.

By using the wiring substrate of the present embodiment, when connecting the bump electrode of the semiconductor element and the lead portion of the wiring substrate, the tip projection of the bump electrode enters the concave portion and the positioning accuracy is improved. , And can be connected while preventing displacement. Further, the tip projection of the bump electrode enters the recess of the lead portion, and the connection area between the bump electrode and the lead portion can be increased.

FIG. 4 is a sectional view showing a connection state between the bump electrodes of the semiconductor element and the leads of the wiring board (substrate base material).

In the connection between the bump electrode 5 of the semiconductor element 4 and the lead portion 2 of the substrate base material 1, the tip protrusion 5a of the bump electrode 5 enters the concave portion 7 to prevent displacement and to prevent the displacement. The connection area with the lead portion 2 can be increased. Specifically, when the pitch between the leads is 80 [μm], the protrusion amount L1 of the tip projection 5a is 15 [μm], and the connection area C1 between the bump electrode 5 and the tip projection 5a is φ30 [μm]. And the connection region C2 of the tip protrusion 5a of the bump electrode 5 is φ20 [μ
m], and the connection area can be increased more than the connection area in the conventional connection with the flat lead portion. When the pitch between the leads is 60 [μm], the protrusion amount L1 of the tip projection 5a is 10 [μm], the connection area C1 between the bump electrode 5 and the tip projection 5a is φ20 [μm], The connection area C2 of the tip protruding portion 5a of the bump electrode 5 is φ14 [μm], so that the connection area can be increased more than the connection area in connection with a conventional flat lead portion.

That is, due to the structure of the lead portion of the wiring board according to the present embodiment, as shown in a comparison diagram of the connection area in FIG. 5, the connection area is increased more than the connection area in the conventional connection with the flat lead portion. With a pitch of 80 [μm], the connection area can be increased by 1.36 times, and by a pitch of 60 [μm], the connection area can be increased by 1.39 times.

Next, a second embodiment of the present invention will be described.

FIG. 6 is a plan perspective view showing the wiring board of this embodiment.

As shown in FIG. 6, the wiring board of this embodiment has a lead portion 2 on the upper surface of a substrate base material 1 to which a bump electrode provided on a semiconductor element is connected. Reference numeral 2 denotes a structure having a V-shaped groove 10 continuous at a position where a bump of a semiconductor element is connected, and a tip projection of a bump electrode is inserted into the groove 10 and aligned. is there.

In the wiring board of the present embodiment, the shape of the groove formed in the lead portion of the wiring board allows the bump electrode of the semiconductor element, especially the tip projection, to enter the groove portion of the lead portion and be connected to the bonding position. The holding and the connection area are improved, and good electrical connection can be maintained even in a narrow-pitch joint.

As shown in the perspective view of the lead portion in FIG. 7, in this embodiment, as shown in FIG. 7A, the groove portion of the lead portion 2 is a V-shaped groove portion 10a in the sectional direction. ,
As another shape of the groove, a U-shaped groove 10b may be used as shown in FIG. 7B, a trapezoidal groove 10c may be used as shown in FIG. 7C, or FIG. As shown in FIG.
0d may be formed. Alternatively, as shown in FIG. 7E, the angle with respect to the lead portion 2 is not limited to the right-angle direction, and the V-shaped groove 10e may be formed at an arbitrary angle. Regardless of the shape of the groove 10, the same effect is obtained.

The wiring board of this embodiment has a lead portion 2 on the upper surface and an electrode (not shown) for external connection on the bottom surface.
Is a wiring board made of a single-layer or multilayer insulating substrate base material 1 constituting a semiconductor package having
The same effect can be obtained even when the present invention is applied to wiring leads of a normal printed circuit board to be flip-chip mounted.

Next, the semiconductor device of this embodiment and a method of manufacturing the same will be described.

FIG. 8 is a sectional view of each step showing a semiconductor device using the wiring board of this embodiment and a method of manufacturing the same. FIG. 8 shows a cross section in a direction perpendicular to the groove of the lead portion.

First, as a pre-process, as shown in FIG.
A wiring substrate having a lead portion to which a bump electrode provided on a semiconductor element is connected, wherein the lead portion of a substrate base material has a groove at a position where the bump electrode of the semiconductor device is connected, and the bump electrode is positioned A wiring board having a structure to be fitted is prepared, and an insulating resin sheet is attached on the wiring board. In addition, a semiconductor element in which a bump electrode having a projection is formed on an electrode pad is prepared.

As shown in FIG. 8A, the semiconductor element 4 provided with the bump electrode 5 having the tip protrusion 5a is provided.
An insulating resin sheet 8 is provided between the bump electrode 5 and the groove 10 of the lead portion 2 of the substrate base material 1 constituting the wiring board.
To perform positioning in the X-Y direction.

Next, as shown in FIG. 8 (b), the tip protrusion 5a of the bump electrode 5 is fitted into the groove 10 of the lead portion 2 and aligned and fixed.
And the lead part 2 are connected. At this time, the semiconductor element 4 or the substrate base material 1 and the interposed resin sheet 8 are pressed and heated by a bonding device, so that the bump electrodes 5 are fitted into the groove portions 10 of the lead portions 2 and connected. The resin sheet 8 protrudes from the groove 10 of the lead portion to the periphery of the groove 10 by pressing the bump electrode 5, so that the bump electrode 5 and the lead portion 2 are electrically connected.

Through the above steps, as shown in FIG. 8C, the semiconductor element 4 is connected via the bump electrode 5 to the lead portion 2 provided on the upper surface of the substrate base material 1 of the wiring board. A semiconductor device in which a bump electrode 5 of a semiconductor element 4 is aligned and connected to a groove 10 of a lead portion 2, and a resin layer 9 is provided in a gap between the semiconductor element 4 and a substrate base material 1. Get the device. In the present embodiment, the protruding portion 5 a of the bump electrode 5 of the semiconductor element 4 is fitted and connected to the groove 10 of the lead 2.

In this embodiment, in order to form the resin layer 9 in the gap between the semiconductor element 4 and the substrate base material 1, the resin sheet 8 is stuck on the substrate. You may supply by potting etc.

By using the wiring board of the present embodiment, when connecting the bump electrode of the semiconductor element and the lead portion of the wiring board, the tip projection of the bump electrode enters the groove, and the positioning accuracy is improved. , And can be connected while preventing displacement. In addition, the tip protrusion of the bump electrode enters the groove of the lead portion, and the connection area between the bump electrode and the lead portion can be increased.

FIGS. 9A and 9B are diagrams showing a connection state between the bump electrodes of the semiconductor element and the leads of the wiring board (substrate base material). FIG. 9A is a sectional view, and FIG. It is a partial plan view.

In the connection between the bump electrode 5 of the semiconductor element 4 and the lead portion 2 of the substrate base material 1, the tip projection 5a of the bump electrode 5 enters the groove 10 to prevent displacement, The connection area with the lead portion 2 can be increased. Specifically, when the pitch between the leads is 80 [μm], the protrusion amount L1 of the tip projection 5a is 15 [μm], and the connection area C1 between the bump electrode 5 and the tip projection 5a is φ30 [μm]. And the connection region C2 of the tip protrusion 5a of the bump electrode 5 is φ20 [μ
m], and the connection area can be made larger than the connection area in connection with a conventional flat lead portion. When the pitch between the leads is 60 [μm], the protrusion amount L1 of the tip projection 5a is 10 [μm], and the connection area C1 between the bump electrode 5 and the tip projection 5a is φ20 [μm].
And the connection region C2 of the tip protrusion 5a of the bump electrode 5.
Is φ14 [μm], and the connection area can be increased more than the connection area in the conventional connection with the flat lead portion.

That is, due to the structure of the lead portion of the wiring board according to the present embodiment, as shown in a comparison diagram of the connection area in FIG. 10, the connection area is increased more than the connection area in the conventional connection with the flat lead portion. In the case of a pitch of 80 [μm], the connection area is increased by 1.35 times, and in the case of a pitch of 60 [μm], the connection area is increased by a factor of 1.30.

In the wiring board of this embodiment, although the rate of increase in the connection area is inferior to that of the wiring board shown in the first embodiment, the shape of the lead portion can be simplified, and Becomes easier.

In this embodiment, the shape of the groove of the lead portion has been described as a V-shaped groove. However, as shown in FIG. 7, the shape of the groove of the lead portion may be U-shaped, trapezoidal, or the like. Similar effects can be obtained. The direction of the groove may be any of parallel, right angle, and any angle with respect to the long side direction of the lead.

Next, another embodiment of the wiring board of the present invention will be described.

FIG. 11 is a plan perspective view showing a wiring board according to the present embodiment.

As shown in FIG. 11, the wiring board of this embodiment has a lead portion 2 on the upper surface of a substrate base material 1 to which a bump electrode provided on a semiconductor element is connected. Reference numeral 2 denotes a structure in which a plurality of individual conical concave portions 7 are arranged at positions where the bumps of the semiconductor element are connected, and the tip protrusions of the bump electrodes enter the concave portions 7 and are aligned. It has. The effect of increasing the connection area can be obtained as compared with the concave portion of the wiring board of the first embodiment.

According to the wiring board of this embodiment, the shape of the concave portion formed in the lead portion of the wiring substrate causes the bump electrode of the semiconductor element, particularly when the tip protruding portion enters the concave portion of the lead portion to be connected. The holding and the connection area are improved, and good electrical connection can be maintained even in a narrow-pitch joint.

FIG. 12 is a plan perspective view showing the wiring board of this embodiment.

As shown in FIG. 12, the wiring board of this embodiment has a lead portion 2 on the upper surface of a substrate base material 1 to which a bump electrode provided on a semiconductor element is connected. Reference numeral 2 denotes a state in which a plurality of V-shaped grooves 10 are arranged in a row at positions where the bumps of the semiconductor element are connected, and the protrusions at the tips of the bump electrodes enter the grooves 10 and are aligned. It has a structure. The effect of increasing the connection area can be obtained as compared with the groove of the wiring board of the second embodiment.

In the wiring board of this embodiment, the shape of the concave portion formed in the lead portion of the wiring substrate causes the bump electrode of the semiconductor element, particularly when the tip protruding portion enters the concave portion of the lead portion to be connected. The holding and the connection area are improved, and good electrical connection can be maintained even in a narrow-pitch joint.

As described above in this embodiment, in a wiring board having a lead portion connected to a bump electrode provided on a semiconductor device on the upper surface of a substrate base material, the lead portion has a bump of the semiconductor device. It has a structure in which an individual concave portion or a continuous V-shaped groove portion is provided at a position to be connected, and the tip protrusion of the bump electrode enters the concave portion or the groove portion and is aligned. . With this configuration, when the bumps of the semiconductor element, particularly the tip protrusions enter the recesses and grooves of the lead portions and are connected, the holding of the bonding position and the improvement of the connection area are achieved.
Good electrical connection can be maintained even at a narrow pitch junction.

[0075]

As described above, in the wiring board of the present invention, the semiconductor device using the same, and the method of manufacturing the same, the wiring board is
The lead portion on the substrate has an individual concave portion or one continuous V-shaped groove portion at a position where the bump of the semiconductor element is connected,
Or a plurality of bump electrodes, each of which has a structure in which the tip protrusions of the bump electrodes enter the recesses or grooves, respectively, and are aligned. When the connection is made by entering the concave portion and the groove portion, the bonding position is maintained and the connection area is improved, so that good electrical connection can be maintained even in the case of bonding at a narrow pitch. Therefore, it is possible to realize a semiconductor device having high reliability of connection between the bump electrode and the lead portion and a method of manufacturing the same.

[Brief description of the drawings]

FIG. 1 is a perspective view showing a wiring board according to an embodiment of the present invention.

FIG. 2 is a perspective view showing a lead portion of the wiring board according to the embodiment of the present invention;

FIG. 3 is a cross-sectional view illustrating a semiconductor device using a wiring board according to an embodiment of the present invention and a method for manufacturing the same.

FIG. 4 is a cross-sectional view showing a connection state between a bump electrode of a semiconductor element and a lead portion of a wiring board according to an embodiment of the present invention.

FIG. 5 is a comparison diagram of a connection area according to an embodiment of the present invention.

FIG. 6 is a perspective view showing a wiring board according to an embodiment of the present invention.

FIG. 7 is a perspective view showing a lead portion of the wiring board according to the embodiment of the present invention;

FIG. 8 is a cross-sectional view showing a semiconductor device using the wiring board according to one embodiment of the present invention and a method for manufacturing the same.

FIG. 9 is a cross-sectional view and a plan view showing a connection state between a bump electrode of a semiconductor element and a lead portion of a wiring board according to an embodiment of the present invention.

FIG. 10 is a comparison diagram of a connection area according to an embodiment of the present invention.

FIG. 11 is a perspective view showing a wiring board according to an embodiment of the present invention.

FIG. 12 is a perspective view showing a wiring board according to an embodiment of the present invention.

FIG. 13 is a sectional view showing a conventional wiring board.

FIG. 14 is a sectional view showing a conventional wiring board.

FIG. 15 is a sectional view showing a connection state between a semiconductor element of a conventional semiconductor device and a lead portion of a wiring board.

FIG. 16 is a cross-sectional view showing a connection state between a conventional wiring board and a semiconductor element.

FIG. 17 is a cross-sectional view showing a connection state between a conventional wiring board and a semiconductor element.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Substrate base material 2 Lead part 3 Resist resin 4 Semiconductor element 5 Bump electrode 6 Sealing resin 7 Depression 8 Resin sheet 9 Resin layer 10 Groove

Claims (16)

[Claims] 1. A wiring board having a lead portion to which a bump electrode provided on a semiconductor element is connected, wherein the lead portion has a concave portion at a position where a bump electrode of the semiconductor element is connected, A wiring substrate having a structure in which bump electrodes are aligned. 2. The wiring board according to claim 1, wherein a plurality of recesses of the lead portion are provided. 3. A wiring substrate having a lead portion to which a bump electrode provided on a semiconductor element is connected, wherein the lead portion has a groove at a position where a bump electrode of the semiconductor element is connected, A wiring substrate having a structure in which bump electrodes are aligned. 4. The wiring board according to claim 3, wherein a plurality of groove portions of the lead portion are provided. 5. The wiring board according to claim 1, wherein the wiring board is a single-layer or multilayer wiring board constituting a semiconductor package having a lead portion on an upper surface and an electrode for external connection on a bottom surface. Item 4. The wiring board according to item 3. 6. A semiconductor device in which a semiconductor element is connected to a lead portion provided on an upper surface of a wiring board via a bump electrode, wherein the bump electrode of the semiconductor element has a concave portion in the lead portion of the wiring board. A semiconductor device, wherein the semiconductor device is aligned and connected to the semiconductor device. 7. The semiconductor device according to claim 6, wherein the protruding tip of the bump electrode of the semiconductor element is fitted and connected to the recess of the lead. 8. A semiconductor device in which a semiconductor element is connected to a lead portion provided on an upper surface of a wiring board via a bump electrode, wherein the bump electrode of the semiconductor element has a groove formed in the lead portion of the wiring board. A semiconductor device, wherein the semiconductor device is aligned and connected to the semiconductor device. 9. The semiconductor device according to claim 8, wherein the protruding end of the bump electrode of the semiconductor element is fitted and connected to the groove of the lead. 10. The semiconductor device according to claim 6, wherein a resin layer is provided in a gap between the semiconductor element and the wiring board. 11. A wiring board having a lead portion to which a bump electrode provided on a semiconductor element is connected, wherein the lead portion has a concave portion at a position where a bump electrode of the semiconductor element is connected, A step of preparing a wiring board having a structure in which the bump electrodes are aligned; a step of providing a resin on the wiring board; the bump electrodes of a semiconductor element provided with bump electrodes; A step of connecting the bump electrode to the lead portion by positioning the bump electrode in a concave portion of the lead portion of the wiring board so as to face the lead portion of the substrate, and connecting the bump electrode and the lead portion. Manufacturing method. 12. The semiconductor device provided with a bump electrode, wherein the bump electrode and a lead portion of a wiring board are opposed to each other,
In the step of fitting the bump electrode into the concave portion of the lead portion of the wiring board and aligning the bump electrode and the lead portion, the semiconductor element or the wiring substrate is pressurized and heated together with the interposed resin. The method of manufacturing a semiconductor device according to claim 11, wherein the bump electrode is connected by being fitted into a recess of a lead portion of the wiring board. 13. A wiring substrate having a lead portion to which a bump electrode provided on a semiconductor element is connected, wherein the lead portion has a groove at a position to which a bump electrode of the semiconductor element is connected. A step of preparing a wiring board having a structure in which the bump electrodes are aligned; a step of providing a resin on the wiring board; the bump electrodes of a semiconductor element provided with bump electrodes; A step of connecting the bump electrode to the lead portion by positioning the bump electrode in the groove of the lead portion of the wiring board so as to face the lead portion of the substrate, and connecting the bump electrode and the lead portion. Manufacturing method. 14. A semiconductor device provided with a bump electrode, wherein the bump electrode and a lead portion of a wiring board are opposed to each other,
In the step of fitting the bump electrode into the groove of the lead portion of the wiring substrate and aligning the same, and connecting the bump electrode and the lead portion, the semiconductor element or the wiring substrate together with the interposed resin is pressurized and heated. 14. The method of manufacturing a semiconductor device according to claim 13, wherein the bump electrodes are connected by fitting them into grooves of lead portions of the wiring board. 15. The method according to claim 11, wherein the step of providing the resin on the wiring board is a step of attaching a resin sheet. 16. The method for manufacturing a semiconductor device according to claim 11, wherein the step of providing a resin on the wiring board is a step of supplying a liquid resin.