JP2001243766A5 - - Google Patents

Download PDF

Info

Publication number
JP2001243766A5
JP2001243766A5 JP2000054883A JP2000054883A JP2001243766A5 JP 2001243766 A5 JP2001243766 A5 JP 2001243766A5 JP 2000054883 A JP2000054883 A JP 2000054883A JP 2000054883 A JP2000054883 A JP 2000054883A JP 2001243766 A5 JP2001243766 A5 JP 2001243766A5
Authority
JP
Japan
Prior art keywords
signal
memory device
semiconductor memory
circuit
self
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000054883A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001243766A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2000054883A priority Critical patent/JP2001243766A/ja
Priority claimed from JP2000054883A external-priority patent/JP2001243766A/ja
Priority to US09/791,839 priority patent/US6404688B2/en
Publication of JP2001243766A publication Critical patent/JP2001243766A/ja
Publication of JP2001243766A5 publication Critical patent/JP2001243766A5/ja
Pending legal-status Critical Current

Links

JP2000054883A 2000-02-29 2000-02-29 半導体記憶装置 Pending JP2001243766A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2000054883A JP2001243766A (ja) 2000-02-29 2000-02-29 半導体記憶装置
US09/791,839 US6404688B2 (en) 2000-02-29 2001-02-26 Semiconductor memory device having a self-refresh operation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000054883A JP2001243766A (ja) 2000-02-29 2000-02-29 半導体記憶装置

Publications (2)

Publication Number Publication Date
JP2001243766A JP2001243766A (ja) 2001-09-07
JP2001243766A5 true JP2001243766A5 (enExample) 2004-12-02

Family

ID=18576081

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000054883A Pending JP2001243766A (ja) 2000-02-29 2000-02-29 半導体記憶装置

Country Status (2)

Country Link
US (1) US6404688B2 (enExample)
JP (1) JP2001243766A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100431331B1 (ko) * 2002-08-21 2004-05-12 삼성전자주식회사 반도체 메모리장치의 입출력 센스 앰프 구동방법 및 그구동제어회로
JP2007273028A (ja) * 2006-03-31 2007-10-18 Matsushita Electric Ind Co Ltd 半導体記憶装置
KR100810060B1 (ko) 2006-04-14 2008-03-05 주식회사 하이닉스반도체 반도체 메모리 소자 및 그의 구동방법
US7447096B2 (en) * 2006-05-05 2008-11-04 Honeywell International Inc. Method for refreshing a non-volatile memory
CN103617805A (zh) * 2013-12-09 2014-03-05 深圳市品凌科技有限公司 存储设备、通过存储芯片的再次利用制造存储设备的方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5243576A (en) * 1990-08-30 1993-09-07 Nec Corporation Semiconductor memory device
KR0171930B1 (ko) * 1993-12-15 1999-03-30 모리시다 요이치 반도체 메모리, 동화기억 메모리, 동화기억장치, 동화표시장치, 정지화기억 메모리 및 전자노트
US5446695A (en) * 1994-03-22 1995-08-29 International Business Machines Corporation Memory device with programmable self-refreshing and testing methods therefore
KR0122107B1 (ko) * 1994-06-04 1997-12-05 김광호 저전력 셀프리프레쉬 및 번-인 기능을 가지는 반도체메모리장치

Similar Documents

Publication Publication Date Title
US8648339B2 (en) Semiconductor device including first semiconductor chip including first pads connected to first terminals, and second semiconductor chip including second pads connected to second terminals
US20170329534A1 (en) Apparatuses and methods for variable latency memory operations
JP2003303492A5 (enExample)
KR940003039A (ko) 반도체 기억장치
US6339353B1 (en) Input circuit of a memory having a lower current dissipation
JP3406698B2 (ja) 半導体装置
US6977865B2 (en) Method and circuit for controlling operation mode of PSRAM
JP2001243766A5 (enExample)
JP2004265484A (ja) 半導体記憶装置
KR19990015318A (ko) 반도체장치의 병합된 데이터 입출력 회로 및 방법
JP2002093168A5 (enExample)
US7369456B2 (en) DRAM memory with autoprecharge
US6925023B2 (en) Semiconductor memory device and electronic device
JP3466088B2 (ja) 同期式記憶装置
JP2001035188A (ja) 半導体装置の試験方法及び半導体装置
US20040217795A1 (en) Delay adjusting apparatus providing different delay times by producing a plurality of delay control signals
US20050002257A1 (en) Semiconductor memory device and electronic device
US7009417B2 (en) Semiconductor module and methods for functionally testing and configuring a semiconductor module
US6944082B2 (en) Semiconductor memory device and electronic device for activation control of word lines in a semiconductor memory device
US6459636B2 (en) Mode selection circuit for semiconductor memory device
JP2004199238A (ja) 半導体装置及びその起動方法
JP3530402B2 (ja) 半導体集積回路装置
US6795943B2 (en) Semiconductor device with test mode
KR100541161B1 (ko) 고속 동작에 적합한 ｘ 주소 추출기, ｘ 주소 추출 방법및 메모리
US6697285B2 (en) Semiconductor memory device