JP2001243766A - 半導体記憶装置 - Google Patents

半導体記憶装置

Info

Publication number
JP2001243766A
JP2001243766A JP2000054883A JP2000054883A JP2001243766A JP 2001243766 A JP2001243766 A JP 2001243766A JP 2000054883 A JP2000054883 A JP 2000054883A JP 2000054883 A JP2000054883 A JP 2000054883A JP 2001243766 A JP2001243766 A JP 2001243766A
Authority
JP
Japan
Prior art keywords
circuit
signal
counter
count value
semiconductor memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000054883A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001243766A5 (enExample
Inventor
Yoshiaki Okuyama
好明 奥山
克学 ▲高▼橋
Katsunori Takahashi
Shinya Fujioka
伸也 藤岡
Akihiro Funyu
明裕 舩生
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2000054883A priority Critical patent/JP2001243766A/ja
Priority to US09/791,839 priority patent/US6404688B2/en
Publication of JP2001243766A publication Critical patent/JP2001243766A/ja
Publication of JP2001243766A5 publication Critical patent/JP2001243766A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
    • G11C7/1045—Read-write mode select circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
JP2000054883A 2000-02-29 2000-02-29 半導体記憶装置 Pending JP2001243766A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2000054883A JP2001243766A (ja) 2000-02-29 2000-02-29 半導体記憶装置
US09/791,839 US6404688B2 (en) 2000-02-29 2001-02-26 Semiconductor memory device having a self-refresh operation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000054883A JP2001243766A (ja) 2000-02-29 2000-02-29 半導体記憶装置

Publications (2)

Publication Number Publication Date
JP2001243766A true JP2001243766A (ja) 2001-09-07
JP2001243766A5 JP2001243766A5 (enExample) 2004-12-02

Family

ID=18576081

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000054883A Pending JP2001243766A (ja) 2000-02-29 2000-02-29 半導体記憶装置

Country Status (2)

Country Link
US (1) US6404688B2 (enExample)
JP (1) JP2001243766A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100431331B1 (ko) * 2002-08-21 2004-05-12 삼성전자주식회사 반도체 메모리장치의 입출력 센스 앰프 구동방법 및 그구동제어회로
JP2007273028A (ja) * 2006-03-31 2007-10-18 Matsushita Electric Ind Co Ltd 半導体記憶装置
KR100810060B1 (ko) 2006-04-14 2008-03-05 주식회사 하이닉스반도체 반도체 메모리 소자 및 그의 구동방법
US7447096B2 (en) * 2006-05-05 2008-11-04 Honeywell International Inc. Method for refreshing a non-volatile memory
CN103617805A (zh) * 2013-12-09 2014-03-05 深圳市品凌科技有限公司 存储设备、通过存储芯片的再次利用制造存储设备的方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5243576A (en) * 1990-08-30 1993-09-07 Nec Corporation Semiconductor memory device
KR0171930B1 (ko) * 1993-12-15 1999-03-30 모리시다 요이치 반도체 메모리, 동화기억 메모리, 동화기억장치, 동화표시장치, 정지화기억 메모리 및 전자노트
US5446695A (en) * 1994-03-22 1995-08-29 International Business Machines Corporation Memory device with programmable self-refreshing and testing methods therefore
KR0122107B1 (ko) * 1994-06-04 1997-12-05 김광호 저전력 셀프리프레쉬 및 번-인 기능을 가지는 반도체메모리장치

Also Published As

Publication number Publication date
US6404688B2 (en) 2002-06-11
US20010017810A1 (en) 2001-08-30

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