JP2001236792A5 - - Google Patents

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Publication number
JP2001236792A5
JP2001236792A5 JP2000394974A JP2000394974A JP2001236792A5 JP 2001236792 A5 JP2001236792 A5 JP 2001236792A5 JP 2000394974 A JP2000394974 A JP 2000394974A JP 2000394974 A JP2000394974 A JP 2000394974A JP 2001236792 A5 JP2001236792 A5 JP 2001236792A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000394974A
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JP2001236792A (ja
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Publication date
Priority claimed from DE19964012A external-priority patent/DE19964012A1/de
Application filed filed Critical
Publication of JP2001236792A publication Critical patent/JP2001236792A/ja
Publication of JP2001236792A5 publication Critical patent/JP2001236792A5/ja
Pending legal-status Critical Current

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JP2000394974A 1999-12-30 2000-12-26 固定値メモリのリフレッシュ方法，そのリフレッシュ装置及びデジタル制御装置 Pending JP2001236792A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19964012.2 1999-12-30
DE19964012A DE19964012A1 (de) 1999-12-30 1999-12-30 Verfahren und Einrichtung zum Refresh des Speicherinhalts einer Speicherzelle eines Festwertspeichers

Publications (2)

Publication Number Publication Date
JP2001236792A JP2001236792A (ja) 2001-08-31
JP2001236792A5 true JP2001236792A5 (ja) 2008-02-14

Family

ID=7935145

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000394974A Pending JP2001236792A (ja) 1999-12-30 2000-12-26 固定値メモリのリフレッシュ方法，そのリフレッシュ装置及びデジタル制御装置

Country Status (4)

Country Link
US (1) US6438056B2 (ja)
JP (1) JP2001236792A (ja)
DE (1) DE19964012A1 (ja)
FR (1) FR2805654B1 (ja)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
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GB2383455B (en) * 2001-12-21 2004-02-25 Motorola Inc Non-volatile memory and method for operating a non-volatile memory
DE10305008A1 (de) 2003-02-07 2004-08-19 Robert Bosch Gmbh Verfahren und Vorrichtung zur Überwachung einer elektronischen Steuerung
KR100782807B1 (ko) * 2003-02-11 2007-12-06 삼성전자주식회사 첵섬 기입 방법 및 그에 따른 첵섬 확인 장치
US7327612B2 (en) * 2005-01-31 2008-02-05 Hewlett-Packard Development Company, L.P. Method and apparatus for providing the proper voltage to a memory
US7516395B2 (en) * 2005-10-12 2009-04-07 Nokia Corporation Memory checking apparatus and method
US8645793B2 (en) 2008-06-03 2014-02-04 Marvell International Ltd. Statistical tracking for flash memory
US7808834B1 (en) 2007-04-13 2010-10-05 Marvell International Ltd. Incremental memory refresh
JP5475942B2 (ja) * 2007-07-30 2014-04-16 株式会社メガチップス 不揮発性半導体記憶装置
US8031526B1 (en) 2007-08-23 2011-10-04 Marvell International Ltd. Write pre-compensation for nonvolatile memory
US8189381B1 (en) 2007-08-28 2012-05-29 Marvell International Ltd. System and method for reading flash memory cells
US8085605B2 (en) 2007-08-29 2011-12-27 Marvell World Trade Ltd. Sequence detection for flash memory with inter-cell interference
JP4525816B2 (ja) * 2007-09-28 2010-08-18 株式会社デンソー 電子機器及びプログラム
US7894254B2 (en) * 2009-07-15 2011-02-22 Macronix International Co., Ltd. Refresh circuitry for phase change memory
JP5271225B2 (ja) * 2009-09-28 2013-08-21 株式会社日立製作所 半導体装置、及び、記憶セルの記憶状態の補正方法
JP2010055746A (ja) * 2009-12-07 2010-03-11 Toshiba Corp 記憶媒体再生装置、記憶媒体再生方法および記憶媒体再生プログラム
JP2012190538A (ja) * 2012-05-25 2012-10-04 Toshiba Corp 記憶装置、記憶媒体再生方法および記憶媒体再生プログラム
DE102019203351A1 (de) * 2019-03-12 2020-09-17 Robert Bosch Gmbh Verfahren und Vorrichtung zum Betreiben einer nichtflüchtigen Speichereinrichtung

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4218764A (en) * 1978-10-03 1980-08-19 Matsushita Electric Industrial Co., Ltd. Non-volatile memory refresh control circuit
US5239505A (en) * 1990-12-28 1993-08-24 Intel Corporation Floating gate non-volatile memory with blocks and memory refresh
US5479170A (en) * 1992-10-16 1995-12-26 California Institute Of Technology Method and apparatus for long-term multi-valued storage in dynamic analog memory
US5392251A (en) * 1993-07-13 1995-02-21 Micron Semiconductor, Inc. Controlling dynamic memory refresh cycle time
JP3644058B2 (ja) * 1994-11-29 2005-04-27 株式会社デンソー 車載エンジンの電子制御装置及びｅｅｐｒｏｍのデータ再書込制御装置
JPH09320300A (ja) * 1996-05-28 1997-12-12 Mitsubishi Electric Corp 半導体記憶装置
JP3596989B2 (ja) * 1996-10-03 2004-12-02 邦博 浅田 半導体記憶装置
JP3505331B2 (ja) * 1996-11-29 2004-03-08 三洋電機株式会社 不揮発性半導体メモリ装置
US5835413A (en) * 1996-12-20 1998-11-10 Intel Corporation Method for improved data retention in a nonvolatile writeable memory by sensing and reprogramming cell voltage levels
US5852582A (en) * 1997-02-18 1998-12-22 Advanced Micro Devices, Inc. Non-volatile storage device refresh time detector
JPH10255487A (ja) * 1997-03-10 1998-09-25 Fujitsu Ltd 半導体メモリ装置
US6005824A (en) * 1998-06-30 1999-12-21 Lsi Logic Corporation Inherently compensated clocking circuit for dynamic random access memory
US6269039B1 (en) * 2000-04-04 2001-07-31 International Business Machines Corp. System and method for refreshing memory devices

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