JP2001223317A - Circuit device and manufacturing method therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To solve a problem of originally unnecessarily excess material of a supporting board of a circuit device having a circuit element mounted on a printed board, a ceramic board, a flexible sheet or the like as the supporting board and an increase in size of the device in thickness of the supporting board. SOLUTION: After an isolating groove 54 is formed on a conductive foil 60, the circuit element is mounted, and covered with an insulating resin 50 with the foil 60 as a supporting board. Then, the foil 60 is inverted upside down, and with the resin 50 as the supporting board, the foil is polished and separated as a conductive path. Accordingly, a circuit device in which a conductive path 51 and a circuit element 52 are supported to the resin 50 can be realized without adopting the supporting board. Further, wirings L1 to L3 absolutely necessary are in the circuit, and a bent structure 59 and an overhang 58 are incorporated to prevent the wirings from being drawn.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a circuit device and a method for manufacturing the same, and more particularly to a thin circuit device which does not require a supporting substrate and a method for manufacturing the same.

[0002]

2. Description of the Related Art Conventionally, a circuit device set in an electronic device is employed in a cellular phone, a portable computer, and the like, and therefore, a reduction in size, thickness, and weight is required.

For example, a semiconductor device will be described as an example of a circuit device. As a general semiconductor device, there is a package type semiconductor device sealed with a conventional transfer mold. This semiconductor device 1 is, as shown in FIG.
It is mounted on the printed circuit board PS.

In the package type semiconductor device 1, the periphery of a semiconductor chip 2 is covered with a resin layer 3.
The lead terminal 4 for external connection is led out from the side part of FIG.

However, this package type semiconductor device 1 has
The lead terminals 4 were outside the resin layer 3, and the overall size was large, and the size, thickness and weight were not satisfied.

Therefore, various companies have competed to develop various structures in order to realize miniaturization, thinning and weight reduction, and recently called a CSP (chip size package), a wafer scale CSP equivalent to the chip size. Alternatively, a CSP having a size slightly larger than the chip size has been developed.

FIG. 25 shows a case where a glass epoxy substrate 5 is used as a supporting substrate, and the CS is slightly larger than the chip size.
It shows P6. Here, the glass epoxy substrate 5
It is assumed that the transistor chip T is mounted on the semiconductor device.

A first electrode 7, a second electrode 8, and a die pad 9 are formed on the surface of the glass epoxy substrate 5, and a first back electrode 10 and a second back electrode 11 are formed on the back surface.
Are formed. And, through the through hole TH,
The first electrode 7 and the first back electrode 10 are electrically connected, and the second electrode 8 and the second back electrode 11 are electrically connected. The bare transistor chip T is fixed to the die pad 9, and the emitter electrode of the transistor and the first electrode 7 are fixed.
Are connected via the thin metal wire 12, and the base electrode of the transistor and the second electrode 8 are connected via the thin metal wire 12. Further, a resin layer 13 is provided on the glass epoxy substrate 5 so as to cover the transistor chip T.

Although the CSP 6 employs the glass epoxy substrate 5, unlike the wafer scale CSP, the structure extending from the chip T to the back surface electrodes 10 and 11 for external connection is simple, and the CSP 6 can be manufactured at low cost. Have.

The CSP 6 is mounted on a printed circuit board PS as shown in FIG. In the printed circuit board PS,
The CSP is provided with electrodes and wiring constituting an electric circuit.
6. The package type semiconductor device 1, the chip resistor CR or the chip capacitor CC and the like are electrically connected and fixed.

The circuit constituted by the printed circuit board is mounted in various sets.

Next, a method of manufacturing the CSP will be described with reference to FIGS. 26 and 27. In FIG. 27,
Reference is made to the flow diagram entitled Central Glass Epoxy / Flexible Substrate.

First, a glass epoxy substrate 5 is prepared as a substrate (supporting substrate), and C
The u foils 20 and 21 are pressed. (See FIG. 26A above.) Subsequently, the first electrode 7, the second electrode 8, the die pad 9,
The Cu foils 20 and 21 corresponding to the first back surface electrode 10 and the second back surface electrode 11 are coated with an etching resistant resist 22, and the Cu foils 20 and 21 are patterned. The patterning may be performed separately on the front and the back (see FIG. 26B).
Next, a hole for a through hole TH is formed in the glass epoxy substrate using a drill or a laser,
This hole is plated to form a through hole TH.
The through-hole TH electrically connects the first electrode 7 to the first back electrode 10, and the second electrode 8 to the second back electrode 10. (Refer to FIG. 26C.) Further, although not shown in the drawing, the first electrode 7 and the second electrode 8 serving as the bonding posts are plated with Ni, and the die pad 9 serving as the die bonding post is formed with Au.
Plating is performed, and the transistor chip T is die-bonded.

Finally, the emitter electrode of the transistor chip T and the first electrode 7, and the base electrode and the second electrode 8 of the transistor chip T are connected via a thin metal wire 12 and covered with a resin layer 13. (See FIG. 26D above.) Then, if necessary, dicing is performed to separate individual electric elements. In FIG. 26, the glass epoxy substrate 5
Although only one transistor chip T is provided, a large number of transistor chips T are provided in a matrix. Therefore, they are finally separated by a dicing device.

By the above manufacturing method, a CSP type electric element using the support substrate 5 is completed. This manufacturing method
The same applies to the case where a flexible sheet is used as the support substrate.

On the other hand, a manufacturing method using a ceramic substrate is shown in a flow chart on the left side of FIG. After preparing a ceramic substrate that is a support substrate, a through hole is formed, and then
The front and back electrodes are printed and sintered using conductive paste. After that, until the resin layer of the previous manufacturing method is covered, the manufacturing method is the same as that shown in FIG. 26. However, unlike a flexible sheet or a glass epoxy substrate, a ceramic substrate is very fragile and is easily chipped. There is a problem that can not be molded. For this reason, after sealing resin is potted and cured, it is polished to flatten the sealing resin, and finally separated individually using a dicing device.

[0017]

In FIG. 25, a transistor chip T, connecting means 7 to 12 and a resin layer 13 are shown.
Are necessary components for electrical connection to the outside and protection of the transistor. However, it is difficult to provide an electric circuit device that realizes reduction in size, thickness, and weight with only these components. Was.

Further, the glass epoxy substrate 5 serving as the support substrate is essentially unnecessary as described above. However, in the manufacturing method, the glass epoxy substrate 5 is used as a supporting substrate for bonding the electrodes, and the glass epoxy substrate 5 cannot be eliminated.

For this reason, the use of the glass epoxy substrate 5 raises the cost. Further, the thickness of the glass epoxy substrate 5 makes the circuit device thicker.
There was a limit to miniaturization, thinning, and weight reduction.

Further, in the case of a glass epoxy substrate or a ceramic substrate, a step of forming a through hole for connecting electrodes on both surfaces is indispensable, and there has been a problem that the manufacturing process becomes long.

FIG. 28 shows a pattern diagram formed on a glass epoxy substrate, a ceramic substrate, a metal substrate or the like. In this pattern, an IC circuit is generally formed, and the transistor chip 21, the IC chip 22,
A chip capacitor 23 and / or a chip resistor 24 are mounted. A bonding pad 26 integrated with the wiring 25 is formed around the transistor chip 21 and the IC chip 22, and the chips 21 and 22 are electrically connected to the bonding pad via a thin metal wire 28. The wiring 29 is formed integrally with the external lead pad 30. These wirings 25 and 29 extend while bending in the substrate, and are formed as thinnest as possible in the IC chip as required. Accordingly, the thin wiring has a very small area of adhesion to the substrate, and has a problem that the wiring is peeled off or warped. The bonding pad 26 includes a power bonding pad and a small-signal bonding pad. Particularly, the small-signal bonding pad has a small bonding area and causes film peeling.

Further, although the external lead is fixed to the external lead pad, there is a problem that the external lead pad is peeled off by an external force applied to the external lead.

[0023]

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned many problems, and firstly, comprises a plurality of electrically separated conductive paths and a plurality of conductive paths fixed on the desired conductive paths. A circuit element, comprising an insulating resin covering the circuit element and integrally supporting the conductive path, among the plurality of conductive paths,
At least one is used as a wiring for electrically connecting the plurality of circuit elements, and by bending a side surface and fitting with the insulating resin, the number of components is minimized.
Further, the present invention has a structure in which the wiring does not come off from the insulating resin to solve the conventional problem.

Second, a plurality of conductive paths electrically separated by a separation groove, a plurality of circuit elements fixed on the desired conductive paths, and a separation between the conductive paths covering the circuit elements and An insulating resin that is filled into the groove and integrally supported, and at least one of the plurality of conductive paths is used as a wiring that electrically connects the plurality of circuit elements, and has a curved side surface. By engaging with the insulating resin, a plurality of conductive paths are integrally supported by the insulating resin filled in the separation groove, and in particular, the wiring is prevented from coming off, thereby solving the conventional problem.

Third, a plurality of conductive paths electrically separated by a separation groove, a plurality of circuit elements fixed on the desired conductive paths, and a plurality of circuit elements covering the circuit elements and between the conductive paths. An insulating resin that is filled in the separation groove and exposes the back surface of the conductive path to integrally support the wiring; at least one of the plurality of conductive paths is configured to electrically connect the plurality of circuit elements; As the side surface is bent and fitted with the insulating resin, the back surface of the conductive path can be used as an electrode for external connection, so that a through hole can be unnecessary and at the same time, one of the conductive paths can be used. Also prevent the disconnection of wiring,
This is to solve the conventional problem.

Fourth, a conductive foil is prepared, and a separation groove shallower than the thickness of the conductive foil is formed in the conductive foil except for at least a region to be a conductive path to form a conductive path having a curved side surface. A step of fixing a plurality of circuit elements on the desired conductive path, covering the circuit element, molding with an insulating resin so as to fill the separation groove, and forming the conductive path and the insulating resin. And removing the conductive foil in a thickness portion where the separation groove is not provided, and a circuit formed by electrically connecting the wiring formed in a part of the conductive path and the plurality of circuit elements. Providing a method of manufacturing a circuit device, characterized by comprising a step of forming a conductive path, wherein the conductive foil forming the conductive path is a starting material, and the conductive foil is supported until the insulating resin is molded. It has a function and is an insulating tree after molding. There can support substrate unnecessary by having a support function, it is intended to solve the conventional problems.

Fifth, a conductive foil is prepared, and a separation groove shallower than the thickness of the conductive foil is formed in the conductive foil except for at least a region serving as a conductive path to form a conductive path having a curved side surface. Fixing a plurality of circuit elements on the desired conductive path, forming connection means for electrically connecting electrodes of the circuit element to the desired conductive path, and covering the circuit element. Molding with an insulating resin so as to be filled in the separation groove, fitting the conductive path and the insulating resin, and uniformizing the conductive foil in a thickness portion where the separation groove is not provided from the back surface To substantially flatten the back surface of the conductive path and the insulating resin between the separation grooves, and the wiring formed by a part of the conductive path and the plurality of circuit elements are electrically connected. And forming a circuit by To provide a manufacturing method of that circuit device has a thin wire which is suppressed in the loss, and can form a flat circuit device, it is intended to solve the conventional problems.

[0028]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS First Embodiment for Explaining a Circuit Device First, the structure of a circuit device according to the present invention will be described with reference to FIG.

FIG. 1 has a conductive path 51 embedded in an insulating resin 50, and a circuit element 52 is provided on the conductive path 51.
A circuit device 53 is shown in which the conductive path 51 is supported by the insulating resin 50. Moreover, the conductive path 51
Has a curved structure 59.

In this structure, circuit elements 52A and 52B, a plurality of conductive paths 51A, 51B and 51C,
A, 51B, and 51C are formed of three materials of insulating resin 50 embedded therein.
Separation grooves 54 filled with zeros are provided. The conductive path 51 of the curved structure 59 is supported by the insulating resin 50.

As the insulating resin, a thermosetting resin such as an epoxy resin, and a thermoplastic resin such as a polyimide resin and polyphenylene sulfide can be used. As the insulating resin, any resin can be adopted as long as the resin can be hardened using a mold, or can be coated by dipping or coating. Further, as the conductive path 51, a conductive foil mainly composed of Cu, a conductive foil mainly composed of Al, a conductive foil composed of an alloy such as Fe-Ni, or the like can be used. Of course, other conductive materials are also possible. Particularly, a conductive material that can be etched and a conductive material that evaporates by laser are preferable.

In the present invention, in particular, the side surface of the conductive path 51 is formed into a curved structure 59 by performing dry etching or wet etching as a non-anisotropic etching to generate an anchor effect. . As a result, a structure in which the conductive path 51 does not come off from the insulating resin 50 is realized.

The connection means of the circuit element 52 includes a thin metal wire 55A, a conductive ball made of a brazing material, a flat conductive ball, a brazing material 55B such as a solder, a conductive paste 55C such as an Ag paste, a conductive film or an anisotropic conductive material. Resin. These connection means are selected depending on the type of the circuit element 52 and the mounting form of the circuit element 52. For example, in the case of a bare semiconductor element, a thin metal wire is selected for the connection between the electrode on the surface and the conductive path 51, and in the case of a CSP, a solder ball or a solder bump is selected. For the chip resistor and the chip capacitor, the solder 55B is selected. There is no problem even if a packaged circuit element, for example, a BGA or the like is mounted on the conductive path 51, and when this is adopted, solder is selected as the connection means.

The adhesion between the circuit element and the conductive path 51A is as follows.
If no electrical connection is required, an insulating adhesive is chosen,
When electrical connection is required, a conductive coating is used. Here, at least one conductive film is sufficient.

The material considered as the conductive film is A
g, Au, Pt, Pd, or the like, and is coated by deposition under low or high vacuum such as vapor deposition, sputtering, or CVD, plating, or sintering.

For example, Ag adheres to Au and also to the brazing material. Therefore, if the Au film is coated on the back surface of the chip, the chip can be thermocompression-bonded by directly covering the conductive path 51A with the Ag film, Au film, or solder film, and the chip can be fixed via a brazing material such as solder. .
Here, the conductive film may be formed on the uppermost layer of the conductive film laminated in a plurality of layers. For example, a conductive path 51 of Cu
On top of A, two layers of Ni coating and Au coating are sequentially applied, three layers of Ni coating, Cu coating and solder coating are sequentially applied, two layers of Ag coating and Ni coating are provided. Those coated in order can be formed. There are many other types and laminated structures of these conductive films, but they are omitted here.

In this circuit device, since the conductive path 51 is supported by the insulating resin 50 as a sealing resin, a supporting substrate is not required, and the conductive path 51, the circuit element 52 and the insulating resin 5 are not required.
0. This configuration is a feature of the present invention. As described in the section of the related art, the conductive path of the conventional circuit device is supported by a support substrate or supported by a lead frame, and therefore, a configuration that may be unnecessary originally is added. However, this circuit device has a feature that it is thin and inexpensive because it is composed of the minimum necessary components and does not require a support substrate.

In addition to the above configuration, there is provided an insulating resin 50 which covers the circuit element 52 and fills the separation groove 54 between the conductive paths 52 and integrally supports the same.

Separation grooves 54 are formed between the conductive paths 51 of the curved structure 59, and by filling the insulating resin 50 into the separation grooves 54, the conductive paths 51 can be prevented from coming off and at the same time have the advantage of being insulated from each other. .

The circuit element 52 is covered and the conductive path 5
There is an insulating resin 50 that is filled in the separation groove 54 between the two and that only the back surface of the conductive path 51 is exposed and supported integrally.

One of the features of the present invention is that the back surface of the conductive path is exposed. The back surface of the conductive path can be used for connection to the outside, and has the feature that the through hole TH of the conventional structure as shown in FIG. 25 can be omitted.

Further, when the circuit element is directly fixed via a conductive film such as brazing material, Au, Ag, or the like, the conductive path 51
Is exposed, the heat generated from the circuit element 52A can be transmitted to the mounting board via the conductive path 51A. In particular, the present invention is effective for a semiconductor chip capable of improving characteristics such as an increase in drive current due to heat radiation.

Further, the present circuit device has a structure in which the surface of the separation groove 54 and the surface of the conductive path 51 substantially match. This structure is a feature of the present invention, and since there is no step between the back electrodes 10 and 11 shown in FIG.
3 can be moved horizontally as it is.

FIG. 1 shows an IC circuit composed of a plurality of circuit elements. In particular, a conductive path connecting the circuit elements functions as a wiring, and has a substantially land-like shape as shown in FIG. 1B. Has become. However, the actual shape is more complicated as shown in FIGS. Second Embodiment for Explaining Circuit Device Next, a circuit device 53 shown in FIG. 2 will be described.

In this structure, as shown in FIG. 2B, wirings L1 and L2 are formed as conductive paths 51.
The structure is substantially the same as Therefore, the wirings L1 and L2 will be described.

As described above, IC circuits include large-scale circuits to small-scale circuits. However, here, for the sake of illustration, a small-scale circuit is shown in FIG. 2A. In this circuit, a differential amplifier circuit and a current mirror circuit, which are frequently used in an audio amplifier circuit, are connected. As shown in FIG. 2A, the differential amplifier circuit is composed of TR1 and TR2, and the current mirror circuit is mainly composed of TR3 and TR4.

FIG. 2B is a plan view when the circuit of FIG. 2A is realized in the present circuit device, FIG. 2C is a cross-sectional view taken along the line AA in FIG. 2B, and FIG. 2D is a line BB in FIG. FIG. A die pad 51A on which TR1 and TR3 are mounted is provided on the left side of FIG. 2B, and TR2 and TR4 are mounted on the right side.
Is provided on which a die pad 51D is mounted. External connection electrodes 51B, 51E to 51G are provided on the upper side of the die pads 51A, 51D.
C, 51H to 51J are provided. Since the emitter of TR1 and the emitter of TR2 are commonly connected, the wiring L2 is formed integrally with the electrodes 51E and 51G. Also, the base of TR3 and the base of TR4, T
Since the emitter of R3 and the emitter of TR4 are commonly connected, the wiring L1 is provided integrally with the electrodes 51C and 55J, and the wiring L3 is provided integrally with the electrodes 55H and 55I.

The feature of the present invention resides in the wirings L1 to L3. Referring to FIG. 28, the wiring 25 and the wiring 29 correspond to this. The wiring varies depending on the degree of integration of the circuit device, but has a very narrow width of 25 μm or more. Note that this 25 μm is a numerical value when wet etching is employed, and the width can be further reduced by employing dry etching.

As is clear from FIG. 2D, the wiring L1
Only exposes the back surface, and the other side surface has a curved structure and is supported by the insulating resin 50. In other words, the wiring is embedded in the insulating resin 50. Therefore, unlike the case where the wiring is simply pasted to the support substrate as shown in FIG. 25, it is possible to prevent the wiring from coming off and warping. In particular, as is apparent from the manufacturing method described below, the anchor effect is generated due to the fact that the side surface of the conductive path has a rough surface and a curved structure, and the eaves are formed on the surface of the conductive path. The structure is such that the conductive path does not escape from the resin.

The electrodes 51B, 51C, 5
Since 51E to 51J are embedded with the insulating resin as described above, even if an external force is applied from the fixed external lead, the structure is difficult to peel off. Third Embodiment for Explaining Circuit Device Next, a circuit device 56 shown in FIG. 8 will be described.

In this structure, the conductive film 5 is formed on the surface of the conductive path 51.
7 are formed, and the rest is substantially the same as the structure of FIG. 1 or FIG. Therefore, here, the description will be made focusing on the place where the conductive film 57 is formed on the conductive path.

The first feature is that a conductive coating 57 is provided to prevent warpage of the conductive path and the circuit device.

Generally, due to the difference in the coefficient of thermal expansion between the insulating resin and the conductive path material (hereinafter referred to as the first material), the circuit device itself warps, and the conductive path is bent or peeled off. In addition, since the thermal conductivity of the conductive path 51 is superior to the thermal conductivity of the insulating resin, the conductive path 51 expands by increasing the temperature first. Therefore, by covering the second material having a smaller coefficient of thermal expansion than the first material, it is possible to prevent the conductive path from being warped or peeled off, and to prevent the circuit device from being warped.
In particular, when Cu is used as the first material, Au, Ni, Pt, or the like is preferable as the second material. The expansion coefficient of Cu is 16.7 × 10 −6 (10 −6), and A
u is 14 × 10 −6, Ni is 12.8 × 10 −6,
Pt is 8.9 × 10 −6. In this case, a plurality of layers may be formed and implemented.

A second feature is that the second material has an anchor effect. The eaves 58 are formed of the second material, and the eaves 5 are attached to the conductive paths 51.
Since 8 is embedded in the insulating resin 50, an anchor effect is generated, and a structure in which the conductive path 51 can be prevented from coming off is obtained.

In the present invention, a double anchor effect is generated in both the curved structure 59 and the eaves 58 to prevent the conductive path 51 from coming off.

Although the above three embodiments have been described with reference to a circuit device in which a transistor chip 52A and a passive element 52B are mounted as a circuit device, the present invention relates to a single semiconductor chip as shown in FIGS. Can also be implemented in a circuit device configured by sealing. As shown in FIG.
A circuit device 81 in which a face-down type element 80 such as a chip device is mounted, or a circuit device 83 in which a passive element 82 such as a chip resistor or a chip capacitor is sealed as shown in FIG. Furthermore, a thin metal wire is connected between the two conductive paths,
This may be sealed. This can be used as a fuse. First Embodiment for Demonstrating Method of Manufacturing Circuit Device Next, a circuit device 53 will be described with reference to FIGS. 3 to 7 and FIG.
A method of manufacturing the device will be described.

First, as shown in FIG. 3, a sheet-shaped conductive foil 60 is prepared. The material of the conductive foil 60 is selected in consideration of the adhesion of the brazing material, the bonding property, and the plating property.
As the material, a conductive foil mainly containing Cu, a conductive foil mainly containing Al, a conductive foil made of an alloy such as Fe-Ni, or the like is used.

The thickness of the conductive foil is preferably about 10 μm to 300 μm in consideration of the later etching.
A 0 μm (2 oz) copper foil was employed. But 300μ
Basically, it is good even if it is more than m or less than 10 μm. As will be described later, it is only necessary that the separation groove 61 shallower than the thickness of the conductive foil 60 can be formed.

The sheet-shaped conductive foil 60 is prepared by being wound into a roll with a predetermined width, and may be conveyed to each step described later, or the conductive foil cut into a predetermined size may be used. It may be prepared and transported to each step described later.

Subsequently, a step of removing the conductive foil 60 excluding at least a region to become the conductive path 51 to be thinner than the thickness of the conductive foil 60, a step of mounting a circuit element on the conductive path 60, and a step of removing the conductive element. There is a step of covering the separated groove 61 and the conductive foil 60 with the insulating resin 50 to seal the circuit element.

First, as shown in FIG. 4, a photoresist PR (etching resistant mask) is formed on the Cu foil 60, and the photoresist PR is patterned so as to expose the conductive foil 60 excluding a region to become the conductive path 51. . And FIG. 5A
As described above, etching is performed via the photoresist PR.

In the present manufacturing method, non-anisotropic etching is performed by wet etching or dry etching, and the side surfaces thereof are rough and curved. Note that the depth of the separation groove 61 formed by etching is about 50 μm.

In the case of wet etching, ferric chloride or cupric chloride is employed as an etchant, and the conductive foil is dipped in the etchant or
This etchant is showered.

In particular, as shown in FIG. 5B, immediately below the photoresist PR serving as an etching mask, the etching in the lateral direction is difficult to proceed, and a portion deeper than that is etched in the lateral direction. As shown in the figure, if the opening diameter of the opening corresponding to the position becomes smaller from a position on the side surface of the separation groove 61 upward, the separation groove 61 has a reverse tapered structure, and has a structure having an anchor structure. In addition, by employing a shower ring, etching proceeds in the depth direction and etching in the horizontal direction is suppressed, so that this anchor structure appears remarkably.

In the case of dry etching, anisotropy,
Non-anisotropic etching is possible. At present, it is said that it is impossible to remove Cu by reactive ion etching, but it can be removed by sputtering. Further, etching can be performed anisotropically or non-anisotropically depending on sputtering conditions.

In FIG. 5, a conductive film having corrosion resistance to an etching solution may be selectively coated instead of the photoresist. When the conductive film is selectively applied to a portion to be a conductive path, the conductive film serves as an etching protective film, and the separation groove can be etched without employing a resist. Materials that can be considered as the conductive film include Ag, Au, Pt, and Pd. Moreover, these corrosion-resistant conductive films are
It has the feature that it can be used as it is as a die pad or a bonding pad.

For example, an Ag film adheres to Au and also adheres to a brazing material. Therefore, if the Au film is coated on the back surface of the chip, the chip can be thermocompression-bonded to the Ag film on the conductive path 51 as it is, and the chip can be fixed via a brazing material such as solder. Further, since the Au thin wire can be bonded to the Ag conductive film, wire bonding is also possible. Therefore, there is an advantage that these conductive films can be used as die pads and bonding pads as they are.

Subsequently, as shown in FIG. 6, there is a step of electrically connecting and mounting the circuit element 52 to the conductive foil 60 in which the separation groove 61 is formed.

The circuit element 52 is a semiconductor element 52A such as a transistor, a diode, or an IC chip, and a passive element 52B such as a chip capacitor or a chip resistor. Although the thickness is increased, a face-down semiconductor element such as a CSP or a BGA can be mounted.

Here, the bare transistor chip 52
A is die-bonded to the conductive path 51A, and the emitter electrode and the conductive path 51B, and the base electrode and the conductive path 51B are connected via a thin metal wire 55A fixed by ball bonding by thermocompression bonding or web bonding by ultrasonic waves. 52B is a chip capacitor or a passive element, which is a brazing material such as solder or a conductive paste 55.
B is fixed.

When the pattern shown in FIG. 28 is applied in the present embodiment, bonding pad 26 is very small in size, but is integral with conductive foil 60. Therefore, the energy of the bonding tool can be transmitted,
It also has the advantage of improving the hondaability. Further, in cutting a thin metal wire after bonding, there is a case where the thin metal wire is subjected to a pull cut. At this time, since the bonding pad is formed integrally with the conductive foil 60, the phenomenon that the bonding pad floats can be eliminated, and the pull cut property can be improved.

Further, as shown in FIG.
And a step of attaching the insulating resin 50 to the curved separation groove 61. This can be achieved by transfer molding, injection molding, dipping or coating. As the resin material, a thermosetting resin such as an epoxy resin can be realized by transfer molding, and a thermoplastic resin such as a polyimide resin and polyphenylene sulfide can be realized by injection molding.

In the present embodiment, the thickness of the insulating resin coated on the surface of the conductive foil 60 is adjusted so as to cover about 100 μm from the top of the fine metal wire 55A.
This thickness can be increased or reduced in consideration of the strength of the circuit device.

The feature of this step is that the conductive foil 60 serving as the conductive path 51 becomes a support substrate until the insulating resin 50 is covered. In the related art, as shown in FIG. 26, the conductive paths 7 to 11 are formed by using the support substrate 5 which is not originally required. However, in the present invention, the conductive foil 60 serving as the support substrate is required as an electrode material. Material. Therefore, there is a merit that the operation can be performed while omitting the constituent materials as much as possible, and the cost can be reduced.

Since the separation groove 61 is formed shallower than the thickness of the conductive foil, the conductive foil 60 is not individually separated as the conductive path 51. Therefore, the sheet-shaped conductive foil 60
When molding insulating resin,
It has the feature that the work of transporting to the mold and mounting on the mold is very easy.

Further, a separation groove 61 having a curved structure 59
Is filled with the insulating resin 50, an anchor effect occurs in this portion, and peeling of the insulating resin 50 can be prevented.
Conversely, it is possible to prevent the conductive path 51 separated in a later step from coming off.

Before coating with the insulating resin 50, for example, a silicone resin or the like may be potted to protect a connection portion of a semiconductor chip or a thin metal wire. Subsequently, there is a step of chemically and / or physically removing the back surface of the conductive foil 60 and separating it as the conductive path 51. Here, the removing step is performed by polishing, grinding, etching, laser metal evaporation, or the like.

In the experiment, the entire surface was shaved by about 30 μm with a polishing device or a grinding device, and the insulating resin 50 was removed from the separation groove 61.
Is exposed. This exposed surface is indicated by a dotted line in FIG. As a result, the conductive path 51 having a thickness of about 40 μm is formed.
And separated. Alternatively, the entire surface of the conductive foil 60 may be wet-etched before the insulating resin 50 is exposed, and thereafter, the entire surface may be ground by a polishing or grinding device to expose the insulating resin 50.

As a result, a structure in which the surface of the conductive path 51 is exposed to the insulating resin 50 is obtained. Then, the separation groove 61 is shaved to form the separation groove 54 of FIG. (See FIG. 7 above.) Finally, a conductive material such as solder is applied to the exposed conductive path 51 if necessary, and the circuit device is completed as shown in FIG.

When a conductive film is applied to the back surface of the conductive path 51, the conductive film may be formed in advance on the back surface of the conductive foil shown in FIG. In this case, the portion corresponding to the conductive path may be selectively applied. The deposition method is, for example, plating. The conductive film is preferably made of a material having resistance to etching. When this conductive film is employed, it can be separated as the conductive path 51 only by etching without polishing.

In the present manufacturing method, only the transistor and the chip resistor are mounted on the conductive foil 60. However, the conductive foil 60 may be arranged as a unit in a matrix.
The circuits shown in FIGS. 2 and 28 may be arranged in a matrix as one unit. In this case, as will be described later, they are individually separated by a dicing device.

By the above manufacturing method, the insulating resin 50
A conductive circuit 51 is buried in the substrate, and a flat circuit device 56 in which the back surface of the insulating resin 50 and the back surface of the conductive path 51 match can be realized.

The feature of this manufacturing method is that the conductive path 51 can be separated using the insulating resin 50 as a supporting substrate. The insulating resin 50 is a material necessary as a material for embedding the conductive path 51, and does not require an unnecessary support substrate 5 unlike the conventional manufacturing method of FIG. Therefore, it has a feature that it can be manufactured with a minimum amount of material and that cost reduction can be realized.

The thickness of the insulating resin from the surface of the conductive path 51 can be adjusted when the insulating resin is attached in the previous step. Accordingly, the thickness of the circuit device 56 has a characteristic that it can be thick or thin, though it differs depending on the circuit element to be mounted. Here, 40 μm is applied to the insulating resin 50 having a thickness of 400 μm.
The circuit device has the m conductive paths 51 and the circuit elements embedded therein. (Refer to FIG. 1 above) Second Embodiment Explaining a Method of Manufacturing a Circuit Device Next, a method of manufacturing a circuit device 56 having an eave 58 will be described with reference to FIGS. 9 to 13 and FIG. Note that, except that the second material 70 serving as an eave is applied, the structure is substantially the same as that of the first embodiment (FIGS. 1 and 2), and a detailed description thereof will be omitted.

First, as shown in FIG. 9, a second material 70 having a small etching rate is placed on a conductive foil 60 made of a first material.
A conductive foil 60 coated with is prepared.

For example, when Ni is deposited on a Cu foil, Cu and Ni can be etched at once by ferric chloride or cupric chloride or the like, and Ni becomes eaves 58 due to a difference in etching rate. Therefore, it is suitable. Thick solid line is N
i, a conductive film having a thickness of 1 to 10 μm.
m is preferable. In addition, the eaves 5
8 is easily formed.

The second material may cover the first material and a material which can be selectively etched. In this case, first, a film made of the second material is patterned so as to cover the formation region of the conductive path 51, and the first film is formed using this film as a mask.
This is because the eaves 58 can be formed by etching this material. Examples of the second material include Al, Ag, and Au. (Refer to FIG. 9 above.) Subsequently, there is a step of removing the conductive foil 60 except for at least a region to be the conductive path 51 so as to be thinner than the thickness of the conductive foil 60.

As shown in FIG. 10, a photoresist PR is formed on Ni 70 and Ni
The photoresist PR may be patterned so that 70 is exposed, and etching may be performed via the photoresist as shown in FIG.

As described above, when etching is performed by using an etchant of ferric chloride or cupric chloride or the like, since the etching rate of Ni70 is lower than the etching rate of Cu60, the eaves 58 appear as the etching proceeds.

The conductive foil 6 on which the separation groove 61 is formed
0, a step of mounting the circuit element 52 (FIG. 12), covering the conductive foil 60 and the separation groove 61 with an insulating resin 50, and chemically and / or physically removing the back surface of the conductive foil 60;
Step of separating as conductive path 51 (FIG. 13) and step of forming a conductive film on the back surface of conductive path to completion (FIG. 8)
Is the same as that of the previous manufacturing method, and the description thereof is omitted. Third Embodiment for Explaining a Method of Manufacturing a Circuit Device Subsequently, IC circuits composed of conductive paths including a plurality of types of circuit elements, wirings, die pads, bonding pads, and the like are arranged in a matrix as one unit, A method of manufacturing a circuit device which is individually separated after sealing to form an IC circuit will be described with reference to FIGS. Here, the description will be made with reference to the structure of FIG. 2, particularly the cross-sectional view of FIG. 2C.
In addition, since this manufacturing method is almost the same as the first embodiment and the second embodiment, the same parts will be briefly described.

First, as shown in FIG. 14, a sheet-like conductive foil 60 is formed.
Prepare

The sheet-shaped conductive foil 60 is prepared by being wound into a roll with a predetermined width, and may be conveyed to each step described later, or the conductive foil cut into a predetermined size may be used. It may be prepared and transported to each step described later.

Subsequently, there is a step of removing the conductive foil 60 excluding at least a region to be the conductive path 51 so as to be thinner than the thickness of the conductive foil 60.

First, as shown in FIG. 15, on a Cu foil 60,
A photoresist PR is formed, and the photoresist PR is patterned so as to expose the conductive foil 60 excluding a region serving as the conductive path 51. Then, as shown in FIG. 16, etching may be performed via the photoresist PR.

The depth of the separation groove 61 formed by etching is, for example, 50 μm, and the side surface thereof is roughened, so that the adhesiveness with the insulating resin 50 is improved.

The side wall of the separation groove 61 is curved because it is anisotropically etched. For this removing step, wet etching or dry etching can be adopted. The curved structure provides a structure in which an anchor effect is generated. (For details, refer to the first embodiment for explaining the method of manufacturing a circuit device.) In FIG. 15, a conductive film having corrosion resistance to an etching solution is selectively coated instead of the photoresist PR. May be. If selectively applied to the part that will be the conductive path,
This conductive film serves as an etching protection film, and the separation groove can be etched without using a resist.

Subsequently, as shown in FIG. 17, there is a step of electrically connecting and mounting the circuit element 52A to the conductive foil 60 in which the separation groove 61 is formed.

As the circuit element 52A, a transistor,
Semiconductor devices such as diodes and IC chips, and passive devices such as chip capacitors and chip resistors. Although the thickness is increased, a face-down semiconductor element such as a CSP or a BGA can be mounted.

Here, the bare transistor chip 52
A is die-bonded to the conductive path 51A, and the emitter electrode and the conductive path 51B, and the base electrode and the conductive path 51B are connected via the thin metal wire 55A.

Further, as shown in FIG.
There is a step of attaching the insulating resin 50 to the separation groove 61 and the separation groove 61. This can be achieved by transfer molding, injection molding, or dipping.

In the present embodiment, the thickness of the insulating resin coated on the surface of the conductive foil 60 is adjusted so as to cover about 100 μm from the highest point of the mounted circuit element. This thickness can be increased or reduced in consideration of the strength of the circuit device.

The feature of this step is that, when the insulating resin 50 is coated, the conductive foil 60 serving as the conductive path 51 serves as a supporting substrate. In the related art, as shown in FIG. 26, the conductive paths 7 to 11 are formed by using the support substrate 5 which is not originally required. However, in the present invention, the conductive foil 60 serving as the support substrate is required as an electrode material. Material. Therefore, there is a merit that the operation can be performed while omitting the constituent materials as much as possible, and the cost can be reduced.

Since the separation grooves 61 are formed to be shallower than the thickness of the conductive foil, the conductive foils 60 are not individually separated as the conductive paths 51. Therefore, the sheet-shaped conductive foil 60
When molding insulating resin,
It has the feature that the work of transporting to the mold and mounting on the mold is very easy.

Subsequently, there is a step of chemically and / or physically removing the back surface of the conductive foil 60 and separating it as the conductive path 51. Here, the removing step is performed by polishing, grinding, etching, laser metal evaporation, or the like.

In the experiment, the entire surface was shaved by about 30 μm with a polishing device or a grinding device to expose the insulating resin 50. This exposed surface is indicated by a dotted line in FIG.
As a result, the conductive paths 51 having a thickness of about 40 μm are separated. Alternatively, the entire surface of the conductive foil 60 may be wet-etched before the insulating resin 50 is exposed, and thereafter, the entire surface may be ground by a polishing or grinding device to expose the insulating resin 50.

As a result, a structure in which the surface of the conductive path 51 is exposed to the insulating resin 50 is obtained.

Further, as shown in FIG.
Is coated with a conductive material such as solder.

Finally, as shown in FIG. 20, there is a step of separating each circuit element to complete a circuit device.

The separation line is indicated by an arrow and can be realized by dicing, cutting, pressing, chocolate break, or the like. When a chocolate break is adopted, a protrusion may be formed on the mold so that a groove is formed in the separation line when the insulating resin is coated.

In particular, dicing is preferred because it is frequently used in a normal method of manufacturing a semiconductor device and can separate very small objects.

The manufacturing method described in the first to third embodiments can implement a complicated pattern as shown in FIG. In particular, the wiring that is bent and formed integrally with the bonding pad 26 and has the other end electrically connected to the circuit element has a narrow width and a long length. for that reason,
Warpage due to heat is very large, and peeling is a problem in the conventional structure. However, in the present invention, since the wiring is embedded and supported by the insulating resin, it is possible to prevent the wiring itself from warping, peeling, or falling off. Also, the bonding pad itself has a small plane area, and in the conventional structure,
Although the peeling of the bonding pad occurs, in the present invention, since it is embedded in the insulating resin as described above, and further supported by the insulating resin with an anchor effect,
It has the advantage of being able to prevent detachment.

Further, there is an advantage that a circuit device in which a circuit is embedded in the insulating resin 50 can be realized. In the case of the conventional structure, it is as if a circuit is incorporated in a printed circuit board or a ceramic substrate. This will be described in a later mounting method. The right side of FIG. 27 shows a flow in which the present invention is simply summarized. Preparation of Cu foil, plating of Ag or Ni, half etching, die bonding, wire bonding, transfer molding, backside C
A circuit device can be realized by nine steps of removing the u foil, processing the back surface of the conductive path, and dicing. Moreover, all processes can be performed in-house without supplying a supporting substrate from a manufacturer. An embodiment describing types of circuit devices and a method for mounting them.

FIG. 21 shows a face-down type circuit element 8.
9 shows a circuit device 81 in which a “0” is mounted. The circuit element 80 corresponds to a bare semiconductor chip, a CSP or BGA with a sealed surface, or the like. FIG. 22 shows a circuit device 83 on which passive elements 82 such as a chip resistor and a chip resistor are mounted. Since they do not require a supporting substrate, they are thin and are sealed with an insulating resin, so that they have excellent environmental resistance.

FIG. 23 illustrates the real layer structure. FIG. 23A shows an example in which the circuit devices 53, 81, and 83 of the present invention described so far are mounted on conductive paths 85 formed on a mounting substrate 84 such as a printed substrate, a metal substrate, or a ceramic substrate.

In particular, since the conductive path 51A to which the back surface of the semiconductor chip 52 is fixed is thermally coupled to the conductive path 85 of the mounting board 84, the heat of the circuit device is radiated through the conductive path 85. be able to. When a metal substrate is used as the mounting substrate 84, the heat dissipation of the metal substrate is also helped, and the temperature of the semiconductor chip 52 can be further reduced. Therefore, the driving capability of the semiconductor chip can be improved.

For example, power MOS, IGBT, SIT,
Transistor for driving large current, IC for driving large current (M
OS type, BIP type, Bi-CMOS type) memory element and the like are preferable.

As the metal substrate, an Al substrate, a Cu substrate, or an Fe substrate is preferable, and an insulating resin and / or an oxide film is formed in consideration of a short circuit with the conductive path 85.

FIG. 23B shows the circuit device 90 of FIG.
This is used as a substrate 84 of 3A. This is the most important feature of the present invention. That is, in a conventional printed board or ceramic board, the through hole TH is formed in the board at most, but the present invention has a feature that a board module in which an IC circuit is built can be realized. For example, at least one circuit (may be built in as a system) is built in a printed circuit board.

Further, conventionally, a printed circuit board, a ceramic substrate, or the like is required as a support substrate, but the present invention can realize a substrate module that does not require the support substrate. This can reduce the thickness and the weight as compared with a hybrid substrate composed of a printed substrate, a ceramic substrate or a metal substrate.

Further, since the circuit device 90 can be used as a support substrate and circuit elements can be mounted on exposed conductive paths,
A high-performance board module can be realized. In particular, if the present circuit device is used as a supporting substrate and the present circuit device 91 is mounted thereon as an element, a lighter and thinner substrate module can be realized.

Therefore, according to these mounting forms, a small and lightweight electronic device mounting this module can be realized.

The hatched portion denoted by reference numeral 93 is
It is an insulating film. For example, a polymer film such as a solder resist is preferable. By forming this, it is possible to prevent a short circuit between the conductive path embedded in the substrate 90 and the electrodes formed on the circuit element 91 and the like. Further, advantages of the circuit device will be described with reference to FIG. In the conventional mounting method, a semiconductor maker forms a package type semiconductor device and a flip chip, and a set maker mounts a semiconductor device supplied by a semiconductor maker and a passive element supplied by a component maker on a printed circuit board. Then, this was assembled into a set as a module to form an electronic device. However, in the present circuit device, the semiconductor device itself can be adopted as a mounting substrate, so that a semiconductor maker can complete a mounting substrate module using a post-process and supply it to a set maker. Therefore, the set maker can largely omit the device mounting on this substrate.

[0123]

As is evident from the above description, according to the present invention, the circuit device is constituted by the minimum required of the circuit device, the conductive path and the insulating resin, so that the circuit device has no waste of resources. Therefore, there is no extra component until completion, and a circuit device that can greatly reduce the cost can be realized. Further, by setting the coating thickness of the insulating resin and the thickness of the conductive foil to optimal values, it is possible to realize a very small, thin, and lightweight circuit device. Furthermore, wiring in which the phenomenon of warpage or peeling is remarkable is
These problems can be solved because they are embedded in and supported by the insulating resin.

Further, since only the back surface of the conductive path is exposed from the insulating resin, the back surface of the conductive path can be immediately used for connection to the outside, and the back electrode and the through hole of the conventional structure as shown in FIG. 25 are unnecessary. It has the advantage that can be.

Further, when the circuit element is directly fixed via a conductive film such as brazing material, Au, Ag or the like, since the back surface of the conductive path is exposed, heat generated from the circuit element is directly transmitted through the conductive path. Heat can be transmitted to the mounting board. In particular, this heat dissipation makes it possible to mount a power element.

Further, this circuit device has a structure in which the surface of the separation groove and the surface of the conductive path have a flat surface substantially coincident with each other, and a narrow pitch QFP or the like is mounted on a support substrate as shown in FIG. 23B. However, since the circuit device itself can be moved horizontally as it is, it is extremely easy to correct the lead deviation.

Further, since the second material is formed on the front side of the conductive path, it is possible to suppress the warpage of the mounting substrate due to the difference in the coefficient of thermal expansion, particularly the warpage or peeling of the elongated wiring.

Further, the side surface of the conductive path has a curved structure,
Further, by forming a coating made of the second material on the surface of the conductive path, an eave attached to the conductive path can be formed. Therefore, an anchor effect can be generated, and the conductive path can be prevented from warping or coming off.

In the method of manufacturing a circuit device according to the present invention, the conductive foil itself, which is the material of the conductive path, functions as a support substrate, and is used for forming a separation groove, mounting circuit elements, and attaching an insulating resin. When the whole is supported by the conductive foil and the conductive foil is separated as each conductive path, the insulating resin is used as a supporting substrate to function. Therefore, the circuit element, the conductive foil, and the insulating resin can be manufactured with the minimum necessary. As described in the conventional example, a support substrate is not required for originally configuring the circuit device, and the cost can be reduced. In addition, the need for a support substrate, the fact that the conductive path is embedded in the insulating resin, and the ability to adjust the thickness of the insulating resin and the conductive foil allow the formation of extremely thin circuit devices. There is also. Further, a curved structure can be formed in the step of forming the separation groove, and a structure having an anchor effect can be realized at the same time.

As is apparent from FIG. 27, the step of forming a through hole, the step of printing a conductor (in the case of a ceramic substrate), and the like can be omitted. It has the advantage that it can be made. In addition, no frame mold is required at all, and the manufacturing method has a very short delivery time.

Until the step of removing the conductive foil to a thickness smaller than the thickness of the conductive foil (for example, half etching), the conductive paths can be handled without being separated individually, so that the workability is improved in the subsequent step of coating the insulating resin. It also has the feature of

Since the same surface is formed of the conductive path and the insulating resin, the mounted circuit device can be shifted without hitting the side surface of the conductive path on the mounting board. In particular, it is possible to re-arrange the circuit devices mounted in a misaligned manner while being shifted in the horizontal direction. Also, if the brazing material is melted after mounting the circuit device, the misaligned mounted circuit device will try to return to the upper part of the conductive path by the surface tension of the melted brazing material, and can be rearranged by the circuit device itself. Becomes

Finally, the circuit device can be used as a support substrate, and the circuit elements can be mounted on the exposed conductive paths.
A high-performance board module can be realized. In particular, if the present circuit device is used as a supporting substrate and the present circuit device 91 is mounted thereon as an element, a lighter and thinner substrate module can be realized.

[Brief description of the drawings]

FIG. 1 is a diagram illustrating a circuit device of the present invention.

FIG. 2 is a diagram illustrating a circuit device according to the present invention.

FIG. 3 is a diagram illustrating a method for manufacturing a circuit device according to the present invention.

FIG. 4 is a diagram illustrating a method for manufacturing a circuit device according to the present invention.

FIG. 5 is a diagram illustrating a method for manufacturing a circuit device according to the present invention.

FIG. 6 is a diagram illustrating a method for manufacturing a circuit device according to the present invention.

FIG. 7 is a diagram illustrating a method for manufacturing a circuit device according to the present invention.

FIG. 8 is a diagram illustrating a circuit device according to the present invention.

FIG. 9 is a diagram illustrating a method for manufacturing a circuit device according to the present invention.

FIG. 10 is a diagram illustrating a method for manufacturing a circuit device according to the present invention.

FIG. 11 is a diagram illustrating a method for manufacturing a circuit device according to the present invention.

FIG. 12 is a diagram illustrating a method for manufacturing a circuit device according to the present invention.

FIG. 13 is a diagram illustrating a method for manufacturing a circuit device according to the present invention.

FIG. 14 is a diagram illustrating a method for manufacturing a circuit device according to the present invention.

FIG. 15 is a diagram illustrating a method for manufacturing a circuit device according to the present invention.

FIG. 16 is a diagram illustrating a method for manufacturing a circuit device according to the present invention.

FIG. 17 is a diagram illustrating a method for manufacturing a circuit device according to the present invention.

FIG. 18 is a diagram illustrating a method for manufacturing a circuit device according to the present invention.

FIG. 19 is a diagram illustrating a method for manufacturing a circuit device according to the present invention.

FIG. 20 is a diagram illustrating a method for manufacturing a circuit device according to the present invention.

FIG. 21 is a diagram illustrating a circuit device of the present invention.

FIG. 22 is a diagram illustrating a circuit device according to the present invention.

FIG. 23 is a diagram illustrating a method for mounting the circuit device of the present invention.

FIG. 24 is a diagram illustrating a mounting structure of a conventional circuit device.

FIG. 25 is a diagram illustrating a conventional circuit device.

FIG. 26 is a diagram illustrating a method for manufacturing a conventional circuit device.

FIG. 27 is a diagram illustrating a method for manufacturing a circuit device according to the related art and the present invention.

FIG. 28 is a pattern diagram of an IC circuit applied to the circuit devices of the related art and the present invention.

FIG. 29 is a diagram illustrating the positioning of a semiconductor maker and a set maker.

[Explanation of symbols]

 Reference Signs List 50 insulating resin 51 conductive path 52 circuit element 53 circuit device 54 separation groove 58 eaves

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Junji Sakamoto 2-5-5 Keihanhondori, Moriguchi-shi, Osaka Sanyo Electric Co., Ltd. (72) Inventor Shigeaki Mashimo 2-5-2 Keihanhondori, Moriguchi-shi, Osaka No. 5 Sanyo Electric Co., Ltd. (72) Katsumi Okawa 2-5-5 Keihanhondori 2-chome, Moriguchi-shi, Osaka Prefecture (72) Inventor Eiji Hisashi Maehara 2 Keihanhondori, Moriguchi-shi, Osaka Sanyo Electric Co., Ltd. (72) Koji Takahashi 29, Kita-cho, Isesaki-shi, Gunma

Claims (24)

[Claims] 1. A plurality of electrically separated conductive paths, a plurality of circuit elements fixed on the desired conductive paths, and an insulating resin covering the circuit elements and integrally supporting the conductive paths. Wherein at least one of the plurality of conductive paths is used as a wiring for electrically connecting the plurality of circuit elements, and a side surface thereof is bent and fitted with the insulating resin. Circuit device. 2. A plurality of conductive paths electrically separated by separation grooves, a plurality of circuit elements fixed on the desired conductive paths, and a plurality of circuit elements covering the circuit elements and separating grooves between the conductive paths. An insulating resin that is filled and integrally supported, and at least one of the plurality of conductive paths is used as a wiring that electrically connects the plurality of circuit elements, and the side surface is bent to form the insulating resin. A circuit device characterized by being fitted with a conductive resin. 3. A plurality of conductive paths electrically separated by a separating groove, a plurality of circuit elements fixed on the desired conductive path, and the separating groove covering the circuit element and between the conductive paths. And an insulating resin that is exposed to the back surface of the conductive path and is integrally supported, and at least one of the plurality of conductive paths is used as a wiring for electrically connecting the plurality of circuit elements. A circuit device characterized in that the side surface is curved and fitted with the insulating resin. 4. A plurality of conductive paths electrically separated by a separation groove, a plurality of circuit elements fixed on the desired conductive path, and an electrode of the circuit element and another of the conductive paths are connected. Connecting means, and an insulating resin that covers the circuit element and is filled in the separation groove between the conductive paths and exposes the back surface of the conductive path and integrally supports the resin, and among the plurality of conductive paths,
At least one is used as a wiring for electrically connecting the plurality of circuit elements, and has a side surface bent and fitted with the insulating resin. 5. The circuit device according to claim 1, wherein said conductive path is formed of a conductive foil of any of copper, aluminum, and iron-nickel. 6. The circuit device according to claim 1, wherein a conductive film made of a metal material different from that of the conductive path is provided on an upper surface of the conductive path. 7. The circuit device according to claim 6, wherein said conductive film is made of nickel or silver plating. 8. The circuit device according to claim 1, wherein the circuit element is configured by one or both of a semiconductor bare chip and a chip circuit component. 9. The circuit device according to claim 4, wherein said connection means is formed of a thin bonding wire. 10. The method according to claim 2, wherein the back surface of the conductive path and the back surface of the insulating resin filled between the separation grooves are made substantially flat. Circuit device. 11. The conductive path excluding the wiring is an electrode,
The circuit device according to any one of claims 1 to 4, wherein the circuit device is used as a bonding pad or a die pad region. 12. A step of preparing a conductive foil, forming a separation groove shallower than the thickness of the conductive foil in the conductive foil except at least a region to be a conductive path, and forming a conductive path having a curved side surface. Fixing a plurality of circuit elements on the desired conductive path, covering the circuit element, molding with an insulating resin so as to fill the separation groove, and fitting the conductive path and the insulating resin. The step of combining and removing the conductive foil in the thickness portion where the separation groove is not provided, and the wiring formed in a part of the conductive path and the plurality of circuit elements are electrically connected to form a circuit And a method of manufacturing a circuit device. 13. A step of preparing a conductive foil and forming a corrosion-resistant conductive film on at least a region serving as a conductive path on the surface of the conductive foil; and providing the conductive foil on the conductive foil excluding at least a region serving as a conductive path. Forming a conductive groove with a side surface curved by forming a separation groove shallower than the thickness of the semiconductor device; fixing a plurality of circuit elements on a desired conductive path; and electrodes of the circuit element and the desired conductive path. Forming a connecting means for electrically connecting the circuit element, covering the circuit element, molding with an insulating resin so as to fill the separation groove, and fitting the conductive path and the insulating resin. Removing the conductive foil in a thickness portion where the separation groove is not provided, and forming a circuit by electrically connecting the wiring formed in a part of the conductive path and the plurality of circuit elements. Circuit characterized by comprising Method of manufacturing location. 14. A step of preparing a conductive foil, forming a separation groove shallower than the thickness of the conductive foil in the conductive foil except for at least a region to be a conductive path, and forming a conductive path having a curved side surface. Fixing a plurality of circuit elements on the desired conductive path, forming connection means for electrically connecting electrodes of the circuit element and the desired conductive path, and covering the circuit element; A step of molding with an insulating resin so as to fill the separation groove and fitting the conductive path and the insulating resin; and removing the conductive foil in a thickness portion where the separation groove is not provided, A step of forming a circuit by electrically connecting the wiring formed by a part of the plurality of circuit elements and the plurality of circuit elements; and a step of cutting the insulating resin to separate the circuit into individual circuit devices. A method for manufacturing a circuit device, comprising: 15. A step of preparing a conductive foil, forming a separation groove shallower than the thickness of the conductive foil in the conductive foil except for at least a region serving as a conductive path, and forming a conductive path having a curved side surface. Fixing a plurality of circuit elements on the desired conductive path, forming connection means for electrically connecting electrodes of the circuit element and the desired conductive path, and covering the circuit element; Molding with an insulating resin so as to fill the separation groove, fitting the conductive path and the insulating resin, and uniformly removing the conductive foil in the thickness portion where the separation groove is not provided from the back surface A circuit in which the back surface of the conductive path and the insulating resin between the separation grooves are made substantially flat, and the wiring formed by a part of the conductive path and the plurality of circuit elements are electrically connected. And a step of forming A method for manufacturing a circuit device. 16. A step of preparing a conductive foil, forming a separation groove shallower than the thickness of the conductive foil in the conductive foil except for at least a region to be a conductive path, and forming a conductive path having a curved side surface. Fixing a plurality of circuit elements on the desired conductive path, forming connection means for electrically connecting electrodes of the circuit element and the desired conductive path, and covering the circuit element; Molding with an insulating resin so as to fill the separation groove, fitting the conductive path and the insulating resin, and uniformly removing the conductive foil in the thickness portion where the separation groove is not provided from the back surface A circuit in which the back surface of the conductive path and the insulating resin between the separation grooves are made substantially flat, and the wiring formed by a part of the conductive path and the plurality of circuit elements are electrically connected. Forming a and cutting the insulating resin Method of manufacturing a circuit device characterized by comprising the step of separating into individual circuit devices. 17. The conductive foil may be made of copper, aluminum or iron.
17. The method according to claim 12, wherein the circuit device is made of nickel. 18. The method according to claim 13, wherein the conductive film is formed by plating with nickel or silver. 19. The circuit device according to claim 12, wherein the separation groove selectively formed in the conductive foil is formed by chemical or physical etching. Manufacturing method. 20. The semiconductor device according to claim 18, wherein the conductive film is used as a part of a mask for forming the separation groove.
3. A method for manufacturing a circuit device according to claim 1. 21. The method of manufacturing a circuit device according to claim 12, wherein one or both of a semiconductor bare chip and a chip circuit component are fixed to said circuit element. 22. The apparatus according to claim 13, wherein said connecting means is formed by wire bonding.
7. The method for manufacturing a circuit device according to any one of 6. 23. The method for manufacturing a circuit device according to claim 12, wherein said insulating resin is attached by transfer molding. 24. The method of manufacturing a circuit device according to claim 14, wherein said insulating resin is separated into individual circuit devices by dicing.