JP2001250883A - Manufacturing method of circuit device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To solve a problem where a printed substrate, a ceramic substrate, a flexible sheet or the like is used as a support substrate and the thickness of the support substrate essentially unnecessary for a circuit device, causes size increase of the circuit device. SOLUTION: After a separation groove 54 is formed in a first conductive foil 60A, a circuit element is mounted and insulation resin 50 is applied by using the laminated conductive foil 60 as a support substrate and reversed. Thereafter, a second conductive foil 60B is etched and separated as a conductive path by using the insulation resin 50 as a support substrate. Therefore, a circuit device where a conductive path 51 and a circuit element 52 are supported by the insulation resin 50 can be realized without adopting a support substrate. Furthermore, since there are wirings L1 to L3 which become absolutely necessary for a circuit, and a bending structure 59 and eaves 58 are provided, drop- out can be prevented.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a circuit device and a method for manufacturing the same, and more particularly to a method for manufacturing a thin circuit device.

[0002]

2. Description of the Related Art Conventionally, a circuit device set in an electronic device is employed in a cellular phone, a portable computer, and the like, and therefore, a reduction in size, thickness, and weight is required.

For example, a semiconductor device will be described as an example of a circuit device. As a general semiconductor device, there is a package type semiconductor device sealed with a conventional transfer mold. This semiconductor device 1 is, as shown in FIG.
It is mounted on the printed circuit board PS.

In the package type semiconductor device 1, the periphery of a semiconductor chip 2 is covered with a resin layer 3.
The lead terminal 4 for external connection is led out from the side part of FIG.

However, this package type semiconductor device 1 has
The lead terminals 4 were outside the resin layer 3, and the overall size was large, and the size, thickness and weight were not satisfied.

Therefore, various companies have competed to develop various structures in order to realize miniaturization, thinning and weight reduction, and recently called a CSP (chip size package), a wafer scale CSP equivalent to the chip size. Alternatively, a CSP having a size slightly larger than the chip size has been developed.

FIG. 25 shows a case where a glass epoxy substrate 5 is used as a supporting substrate, and the CS is slightly larger than the chip size.
It shows P6. Here, the glass epoxy substrate 5
It is assumed that the transistor chip T is mounted on the semiconductor device.

A first electrode 7, a second electrode 8, and a die pad 9 are formed on the surface of the glass epoxy substrate 5, and a first back electrode 10 and a second back electrode 11 are formed on the back surface.
Are formed. And, through the through hole TH,
The first electrode 7 and the first back electrode 10 are electrically connected, and the second electrode 8 and the second back electrode 11 are electrically connected. The bare transistor chip T is fixed to the die pad 9, and the emitter electrode of the transistor and the first electrode 7 are fixed.
Are connected via the thin metal wire 12, and the base electrode of the transistor and the second electrode 8 are connected via the thin metal wire 12. Further, a resin layer 13 is provided on the glass epoxy substrate 5 so as to cover the transistor chip T.

Although the CSP 6 employs the glass epoxy substrate 5, unlike the wafer scale CSP, the structure extending from the chip T to the back surface electrodes 10 and 11 for external connection is simple, and the CSP 6 can be manufactured at low cost. Have.

The CSP 6 is mounted on a printed circuit board PS as shown in FIG. In the printed circuit board PS,
The CSP is provided with electrodes and wiring constituting an electric circuit.
6. The package type semiconductor device 1, the chip resistor CR or the chip capacitor CC and the like are electrically connected and fixed.

The circuit constituted by the printed circuit board is mounted in various sets.

Next, a method of manufacturing the CSP will be described with reference to FIGS. 26 and 27. In FIG. 27,
Reference is made to the flow diagram entitled Central Glass Epoxy / Flexible Substrate.

First, a glass epoxy substrate 5 is prepared as a substrate (supporting substrate), and C
The u foils 20 and 21 are pressed. (See FIG. 26A above.) Subsequently, the first electrode 7, the second electrode 8, the die pad 9,
The Cu foils 20 and 21 corresponding to the first back surface electrode 10 and the second back surface electrode 11 are coated with an etching resistant resist 22, and the Cu foils 20 and 21 are patterned. The patterning may be performed separately on the front and the back (see FIG. 26B).
Subsequently, a hole for the through hole TH is formed in the glass epoxy substrate using a drill or a laser, and the hole is plated to form the through hole TH. The first electrode 7 and the first back electrode 1 are formed by the through hole TH.
0, the second electrode 8 and the second back electrode 10 are electrically connected. (Refer to FIG. 26C.) Further, although not shown in the drawing, the first electrode 7 and the second electrode 8 serving as the bonding posts are plated with Ni, and the die pad 9 serving as the die bonding post is formed with Au.
Plating is performed, and the transistor chip T is die-bonded.

Finally, the emitter electrode of the transistor chip T and the first electrode 7, and the base electrode and the second electrode 8 of the transistor chip T are connected via a thin metal wire 12 and covered with a resin layer 13. (See FIG. 26D above.) Then, if necessary, dicing is performed to separate individual electric elements. In FIG. 26, the glass epoxy substrate 5
Although only one transistor chip T is provided, a large number of transistor chips T are provided in a matrix. Therefore, they are finally separated by a dicing device.

By the above manufacturing method, a CSP type electric element using the support substrate 5 is completed. This manufacturing method
The same applies to the case where a flexible sheet is used as the support substrate.

On the other hand, a manufacturing method using a ceramic substrate is shown in a flow chart on the left side of FIG. After preparing a ceramic substrate that is a support substrate, a through hole is formed, and then
The front and back electrodes are printed and sintered using conductive paste. After that, until the resin layer of the previous manufacturing method is covered, the manufacturing method is the same as that shown in FIG. 26. However, unlike a flexible sheet or a glass epoxy substrate, a ceramic substrate is very fragile and is easily chipped. There is a problem that can not be molded. For this reason, after sealing resin is potted and cured, it is polished to flatten the sealing resin, and finally separated individually using a dicing device.

[0017]

In FIG. 25, a transistor chip T, connecting means 7 to 12 and a resin layer 13 are shown.
Are necessary components for electrical connection to the outside and protection of the transistor. However, it is difficult to provide an electric circuit device that realizes reduction in size, thickness, and weight with only these components. Was.

Further, the glass epoxy substrate 5 serving as the support substrate is essentially unnecessary as described above. However, in the manufacturing method, the glass epoxy substrate 5 is used as a supporting substrate for bonding the electrodes, and the glass epoxy substrate 5 cannot be eliminated.

For this reason, the use of the glass epoxy substrate 5 raises the cost. Further, the thickness of the glass epoxy substrate 5 makes the circuit device thicker.
There was a limit to miniaturization, thinning, and weight reduction.

Further, in the case of a glass epoxy substrate or a ceramic substrate, a step of forming a through hole for connecting electrodes on both surfaces is indispensable, and there has been a problem that the manufacturing process becomes long.

FIG. 28 shows a pattern diagram formed on a glass epoxy substrate, a ceramic substrate, a metal substrate or the like. In this pattern, an IC circuit is generally formed, and the transistor chip 21, the IC chip 22,
A chip capacitor 23 and / or a chip resistor 24 are mounted. A bonding pad 26 integrated with the wiring 25 is formed around the transistor chip 21 and the IC chip 22, and the chips 21 and 22 are electrically connected to the bonding pad via a thin metal wire 28. The wiring 29 is formed integrally with the external lead pad 30. These wirings 25 and 29 extend while bending in the substrate, and are formed as thinnest as possible in the IC chip as required. Accordingly, the thin wiring has a very small area of adhesion to the substrate, and has a problem that the wiring is peeled off or warped. The bonding pad 26 includes a power bonding pad and a small-signal bonding pad. Particularly, the small-signal bonding pad has a small bonding area and causes film peeling.

Further, although the external lead is fixed to the external lead pad, there is a problem that the external lead pad is peeled off by an external force applied to the external lead.

[0023]

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned many problems, and firstly, a conductive path which is patterned into a predetermined shape and has a curved side surface is supported by a conductive foil. By electrically connecting and fixing an element on the desired conductive path, covering the circuit element and the conductive path with an insulating resin, and removing the conductive foil except for at least a portion corresponding to the conductive path. Is the solution.

According to the present manufacturing method, a through hole can be made unnecessary, and at the same time, a conductive foil is utilized as a supporting substrate and a conductive path, the number of components is minimized, and the conductive path does not come off from the insulating resin. It has a structure.

Second, a step of preparing a laminated conductive foil in which the second conductive foil is laminated on the back surface of the first conductive foil, and separating the first conductive foil into the first conductive foil excluding at least a region serving as a conductive path. Forming a groove to form a first conductive path having a curved side surface; electrically connecting and fixing a desired circuit element on the desired first conductive path; Covering the first conductive path and molding with an insulating resin so as to be filled in the separation groove; and removing the second conductive foil at a portion corresponding to the separation groove; Forming a second conductive path on the back surface of the conductive path.

The second conductive foil is used as an etching stopper when forming the first conductive path, and the first conductive path is prevented from falling apart. And finally, it is used as the second conductive path. Further, the conductive path is integrally supported by the insulating resin filled in the separation groove, thereby preventing the conductive path from coming off. Of course, through holes can be eliminated.

Third, a step of preparing a laminated conductive foil in which a second conductive foil is laminated on the back surface of the first conductive foil;
Forming a corrosion-resistant conductive film on at least a region serving as a conductive path on the surface of the conductive foil, and forming a separation groove in the conductive foil excluding at least the region serving as the conductive path to form a first conductive film having a curved side surface. Forming a path, fixing a circuit element on the desired first conductive path, and forming connecting means for electrically connecting an electrode of the circuit element to the desired first conductive path. Covering the circuit element, the connection means and the first conductive path, molding with an insulating resin so as to fill the separation groove, and fitting the conductive path and the insulating resin; Forming a second conductive path on the back surface of the first conductive path by removing the second conductive foil on which the separation groove is not provided.

The second conductive foil is used as an etching stopper when forming the first conductive path, and the first conductive path is prevented from falling apart. And finally, it is used as the second conductive path. In addition, an eave is formed on the surface of the conductive path by adopting the conductive film, and the conductive path is prevented from coming off by the insulating resin that covers the eave and fills the separation groove. Of course, through holes can be eliminated.

Fourth, a step of preparing a laminated conductive foil in which a second conductive foil is laminated on the back surface of the first conductive foil, and the step of preparing the first conductive foil excluding at least a region serving as a conductive path, Forming a separation groove to form a conductive path having a curved side surface, and fixing a circuit element on the desired conductive path;
Forming a connection means for electrically connecting an electrode of the circuit element and a desired first conductive path; and
The connection means and the first conductive path are covered, and molded with an insulating resin so as to fill the separation groove.
Forming the second conductive path on the back surface of the first conductive path by removing the first conductive foil not provided with the separation groove; And a step of cutting the insulating resin to separate it into individual circuit devices.

Fifth, a step of preparing a laminated conductive foil in which a second conductive foil is laminated on the back surface of the first conductive foil, and at least a region on the surface of the first conductive foil which becomes a conductive path has corrosion resistance. Forming a separation groove in the first conductive foil excluding at least a region to be the first conductive path to form a conductive path having a curved side surface; Fixing a circuit element on the first conductive path; forming a connection means for electrically connecting an electrode of the circuit element to a desired first conductive path; and covering the circuit element; Molding with an insulating resin so as to fill the separation groove, fitting the first conductive path and the insulating resin; and removing the second conductive foil not provided with the separation groove. Forming a second conductive path on the back surface of the first conductive path; Solves in that it comprises a step of separating into individual circuit devices by cutting the insulating resin.

[0031]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS First Embodiment for Explaining a Circuit Device First, the structure of a circuit device according to the present invention will be described with reference to FIG.

FIG. 1 has a conductive path 51 embedded in an insulating resin 50, and a circuit element 52 is provided on the conductive path 51.
A circuit device 53 is shown in which the conductive path 51 is supported by the insulating resin 50. Moreover, the conductive path 51
Has a curved structure 59.

In this structure, the circuit elements 52A and 52B, the plurality of first conductive paths 51A to 51C, and the first conductive paths
1A to 51C are mainly composed of three materials of the insulating resin 50 embedded therein, and between the first conductive paths 51A to 50C,
A separation groove 54 filled with the insulating resin 50 is provided. The conductive path 51 of the curved structure 59 is supported by the insulating resin 50.

More specifically, substantially all of the conductive paths 51 have a laminated structure, and include a first conductive path 51A and a second conductive path 51S, a first conductive path 51B and a second conductive path 51T, and a second conductive path 51T. The first conductive path 51C and the second conductive path 51U are stacked.

As the insulating resin, a thermosetting resin such as an epoxy resin, or a thermoplastic resin such as a polyimide resin or polyphenylene sulfide can be used. As the insulating resin, any resin can be adopted as long as the resin can be hardened using a mold, or can be coated by dipping or coating.

The laminated conductive foil has a structure in which the first conductive path of the upper layer is mainly made of Cu (or Al) and the second conductive path of the lower layer is mainly made of Al (or Cu). Can be

The connection means of the circuit element 52 includes a thin metal wire 55A, a conductive ball made of a brazing material, a flat conductive ball, a brazing material 55B such as a solder, a conductive paste 55C such as an Ag paste, a conductive film or an anisotropic conductive material. Resin. These connection means are selected depending on the type of the circuit element 52 and the mounting form of the circuit element 52. For example, in the case of a bare semiconductor element, a thin metal wire is selected for the connection between the electrode on the surface and the conductive path 51, and in the case of a CSP, flip chip, or the like, a solder ball or a solder bump is selected. Also chip resistance,
Solder 55B is selected as the chip capacitor. There is no problem even if a packaged circuit element, for example, a BGA or a package type semiconductor element is mounted on the conductive path 51,
When this is adopted, solder is selected as the connection means.

The adhesion between the circuit element and the conductive path 51A is as follows.
If no electrical connection is required, an insulating adhesive is chosen,
When electrical connection is required, a conductive coating is used. Here, at least one conductive film is sufficient.

The material considered as the conductive film is N
i, Ag, Au, Pt, Pd, or the like, and is coated by deposition under a low or high vacuum such as evaporation, sputtering, or CVD, plating, or sintering of a conductive paste.

For example, Ag adheres to Au and also adheres to the brazing material. Therefore, if the Au film is coated on the back surface of the chip, the chip can be thermocompression-bonded by directly covering the conductive path 51A with the Ag film, Au film, or solder film, and the chip can be fixed via a brazing material such as solder. .
Here, the conductive film may be formed on the uppermost layer of the conductive film laminated in a plurality of layers. For example, a conductive path 51 of Cu
On top of A, two layers of Ni coating and Au coating are sequentially applied, three layers of Ni coating, Cu coating and solder coating are sequentially applied, two layers of Ag coating and Ni coating are provided. Those coated in order can be formed. There are many other types and laminated structures of these conductive films, but they are omitted here.

The present circuit device has an insulating resin 50 which covers the conductive path 51 and is filled in the separation groove 54 between the first conductive paths 51A to 51C and integrally supported.

A separation groove 54 is formed between the conductive paths 51.
By filling the insulating resin 50 here, there is an advantage that mutual insulation is achieved.

The conductive paths 51A to 51C of the curved structure 59
The gap between them is a separation groove 54, which is filled with the insulating resin 50, so that the conductive paths 51A to 51C can be prevented from coming off and at the same time, they have the advantage of being insulated from each other.

The circuit element 52 is covered and the conductive path 5
Insulating resin 5 filled in separation groove 54 between 1A-51C and exposing and integrally supporting second conductive paths 51S-51U.
It has 0.

By exposing the second conductive paths 51S to 51U, the back surface of the second conductive paths can be connected to the outside, so that the through hole TH of the conventional structure as shown in FIG. 25 can be eliminated. .

Further, when the circuit element is directly fixed via a conductive film such as brazing material, Au, Ag, etc., the conductive path 52
The heat generated from A can be transmitted to the mounting board via the conductive path 51A. In particular, the present invention is effective for a semiconductor chip capable of improving characteristics such as an increase in drive current due to heat radiation.

FIG. 1 shows an IC circuit composed of a plurality of circuit elements. In particular, a conductive path connecting the circuit elements functions as a wiring. It has the shape of But the actual shape is
As shown in FIG. 2 and FIG. 28, it is more complicated. Second Embodiment for Explaining Circuit Device Next, a circuit device 53 shown in FIG. 2 will be described.

In this structure, the wirings L1 to L
3 are formed, and the rest is substantially the same as the structure of FIG. Therefore, the wirings L1 to L3 will be described.

As described above, IC circuits range from small-scale circuits to large-scale circuits. However, here, for the sake of illustration, a small-scale circuit is shown in FIG. 2A. This circuit is frequently used in an audio amplifier circuit, and is a circuit in which a differential amplifier circuit and a current mirror circuit are connected. As shown in FIG. 2A, the differential amplifier circuit is composed of TR1 and TR2, and the current mirror circuit is mainly composed of TR3 and TR4.

FIG. 2B is a plan view when the circuit of FIG. 2A is realized in the present circuit device, FIG. 2C is a sectional view taken along line AA in FIG. 2B, and FIG. 2D is a line BB in FIG. FIG. A die pad 51A on which TR1 and TR3 are mounted is provided on the left side of FIG. 2B, and TR2 and TR4 are mounted on the right side.
Is provided on which a die pad 51D is mounted. External connection electrodes 51B, 51E to 51G are provided on the upper side of the die pads 51A, 51D.
C, 51H to 51J are provided. B and E are
It shows a base electrode and an emitter electrode. And T
Since the emitter of R1 and the emitter of TR2 are commonly connected, the wiring L2 is formed integrally with the electrodes 51E and 51G. Since the base of TR3 and the base of TR4, and the emitter of TR3 and the emitter of TR4 are commonly connected, the wiring L1 is provided integrally with the electrodes 51C and 55J, and the wiring L3 is formed integrally with the electrodes 55H and 55I. It is provided.

The wirings L1 to L3 have characteristics, and
In FIG. 8, the wiring 25 and the wiring 29 correspond to this. The wiring varies depending on the degree of integration of the circuit device, but has a very narrow width of 25 μm or more.
The width of 25 μm is a numerical value when wet etching is employed, and if dry etching is employed,
Its width can be further reduced.

As apparent from FIG. 2D, the first conductive path 51K constituting the wiring L1 is embedded in the insulating resin 50, and the side surface has a curved structure and the insulating resin 5
0 is supported. In other words, the wiring is embedded in the insulating resin 50. Therefore, unlike the case where the wiring is simply bonded to the support substrate as shown in FIGS. 24 to 28, it is possible to prevent the wiring from being pulled out or warped. In particular, as is apparent from the manufacturing method described below,
An anchor effect occurs due to the fact that the side surface of the first conductive path has a rough surface and a curved structure, and that an eave is formed on the surface of the first conductive path. The structure does not come off. The structure having the eaves will be described with reference to FIG.

The external connection electrodes 51B, 51C, 5
Since 51E to 51J are embedded with the insulating resin as described above, even if an external force is applied from the fixed external lead, the structure is difficult to peel off. Here, the resistor R1 and the capacitor C1 are omitted, but may be mounted on the first conductive path. Further, as will be described in an embodiment of a mounting structure later, it may be mounted on the back surface of the circuit device or may be mounted externally on the mounting board side. Third Embodiment Explaining Circuit Device Next, a circuit device 56 shown in FIG. 8 will be described.

This structure is substantially the same as the structure shown in FIGS. 1 and 2 except that a conductive film 57 is formed on the surfaces of the first conductive paths 51A to 51C. Therefore, here, the conductive film 57 will be mainly described.

The first feature is that the first conductive paths 51A to 51A
The point is that a second material different from the material constituting C (hereinafter referred to as a first material) has an anchor effect.
Since the eaves 58 are formed of the second material, and the eaves 58 attached to the first conductive paths 51A to 51C are embedded in the insulating resin 50, an anchor effect is generated and the first conductive paths 51A to 51C are formed. The structure that can prevent the falling off can be achieved.

The present invention provides a double anchor effect in both the curved structure 59 and the eaves 58 to create a first conductive path 5
1A to 51C are suppressed.

Although the above three embodiments have been described with reference to a circuit device in which a plurality of circuit elements are mounted and a circuit is formed including wirings, the present invention is applied to a single circuit device as shown in FIGS. The present invention is also applicable to a circuit device in which a circuit element (semiconductor element or passive element) is sealed. In FIG. 21, a face-down type device 80 such as a CSP is used as an example.
22 is shown, or FIG. 22 shows a circuit device in which passive elements 82 such as a chip resistor and a chip capacitor are sealed. Further, a thin metal wire may be connected between the two conductive paths and sealed. This can be used as a fuse. First Embodiment Explaining Method for Manufacturing Circuit Device Next, a method for manufacturing the circuit device 53 will be described with reference to FIGS. 3 to 7 and FIG.

First, as shown in FIG. 3, a sheet-shaped conductive foil 60 is prepared. This conductive foil 60 has a structure in which a first conductive foil 60A and a second conductive foil 60B are laminated.

What is important here is that both conductive foils can be selectively etched and that the resistance value is low.
In order to improve the degree of integration, it is also important that a fine pattern can be formed by etching. For example,
When patterning the first conductive foil 60A by etching, it is important that the second conductive foil 60B functions as an etching stopper, and conversely, the second conductive foil 60B
When B is etched and patterned as a second conductive path, it is also important that the first conductive foil 60A is not etched.

For example, as a material having a low resistance value, Cu,
Al, Au, Ag, Pt and the like can be mentioned, but Cu and Al are suitable in consideration of cost and workability. Cu is the most adopted material because of its low resistance and low cost, and is a material that can be wet-etched. Therefore, when cost and low resistance are required, it is preferable to use this Cu as the first conductive foil 60A. However, it is a material that is difficult to dry-etch. On the other hand, Al is a semiconductor I
It is a material that is often used for C wiring and can be anisotropically etched. Since the side walls can be etched straight, wiring can be formed at a higher density. Therefore, when a finer pattern is required, Al may be used as the first conductive foil 60A.

For example, when Cu is used as the first conductive foil, if an Al foil is prepared and the surface of the Al foil is plated with Cu, the thickness of Cu can be adjusted, so that a finer pattern can be obtained. Naturally, if the thickness of Cu is reduced, the etching in the lateral direction does not proceed, so that a finer pattern can be formed. When Al is used as the first conductive foil 60A, a Cu foil is prepared, and the Al film thickness can be adjusted by forming Al on the Cu foil by vapor deposition or sputtering. Further, since anisotropic etching can be performed with a Cl2 gas or a Cl2 + BCl3 gas, a finer pattern can be formed.

Hereinafter, the second conductive foil 60B will be 10 μm
３００300 μm Al foil is used, and a first conductive foil 60A is plated on the Al foil to a thickness of several μm to about 20 μm.
The description will be made using this laminated conductive foil 60.

The sheet-shaped laminated conductive foil 60 is prepared by being wound into a roll with a predetermined width, and may be conveyed to each step described later, or the conductive foil cut into a predetermined size. May be prepared and transported to each step described later. Subsequently, a step of removing the first conductive foil 60A excluding at least a region to be the first conductive paths 51A to 51C,
There is a step of mounting the circuit element 52 on the first conductive path 60A and a step of covering the isolation groove 61 and the laminated conductive foil 60 formed by the removing step with the insulating resin 50 to seal the circuit element.

First, as shown in FIG. 4, a photoresist PR (etching resistant mask) is formed on the first conductive foil 60A of the Cu foil 60, and the first conductive PR is formed by removing a region to be the first conductive paths 51A to 51C. Is patterned so that the conductive foil 60A is exposed. And as shown in FIG. 5A,
Etching is performed via the photoresist PR.

The present manufacturing method is characterized in that it is non-anisotropically etched by wet etching or dry etching, and its side surfaces are rough and curved.

In the case of wet etching, ferric chloride or cupric chloride is used as an etchant, and the conductive foil is dipped in the etchant or
This etchant is showered. Here, since the wet etching is generally performed non-anisotropically, the side surface has a curved structure. When ferric chloride is used as an etchant, Al does not work as an etching stopper because Al has a higher etching rate than Cu. Therefore, when the first conductive foil 60A is patterned as the first conductive paths 51A to 51C, A
1 of the first conductive paths 51A to 51
It is necessary to increase the thickness so that the 51C can be integrally supported.

In the case of dry etching, anisotropy,
Non-anisotropic etching is possible. At present, it is said that it is impossible to remove Cu by reactive ion etching, and Cu can be removed by sputtering. Further, etching can be performed anisotropically or non-anisotropically depending on sputter etching conditions. By making it non-anisotropic,
The side surface of the separation groove 61 has a curved structure.

Here, an etchant that etches Cu and does not etch Al is adopted, and an etchant in which Al serves as an etching stopper is preferable.

In particular, as shown in FIG. 5B, immediately below the photoresist PR serving as an etching mask, the etching in the horizontal direction is difficult to proceed, and the deeper portion is etched in the horizontal direction. As shown in the figure, if the opening diameter of the opening corresponding to the position becomes smaller from a position on the side surface of the separation groove 61 upward, the separation groove 61 has a reverse tapered structure, and has a structure having an anchor structure. In addition, by employing a shower ring, etching proceeds in the depth direction and etching in the horizontal direction is suppressed, so that this anchor structure appears remarkably.

In FIG. 4, a conductive film having corrosion resistance to an etching solution may be selectively coated instead of the photoresist. When the conductive film is selectively applied to a portion to be a conductive path, the conductive film serves as an etching protective film, and the separation groove can be etched without employing a resist. Materials that can be considered as the conductive film include Ni, Ag, Au,
Pt or Pd. Moreover, these corrosion-resistant conductive films have a feature that they can be utilized as they are as die pads and bonding pads.

For example, an Ag film adheres to Au and also adheres to a brazing material. Therefore, if the Au film is coated on the back surface of the chip, the chip can be thermocompression-bonded to the Ag film on the conductive path 51 as it is, and the chip can be fixed via a brazing material such as solder. Further, since the Au thin wire can be bonded to the Ag conductive film, wire bonding is also possible. Therefore, there is an advantage that these conductive films can be used as die pads and bonding pads as they are.

Subsequently, as shown in FIG. 6, the circuit elements 52A, 52A, 5C are formed in the first conductive paths 51A to 51C in which the separation grooves 61 are formed.
There is a step of electrically connecting 2B and mounting.

The circuit element 52 is a semiconductor element 52A such as a transistor, a diode, or an IC chip, and a passive element 52B such as a chip capacitor or a chip resistor. These elements may be bare chips or sealed chips. Although the thickness is increased, a face-down element (also called a flip chip) such as a CSP or a BGA can be mounted.

Here, the bare transistor chip 52
A is die-bonded to the first conductive path 51A. Further, the emitter electrode and the first conductive path 51B, and the base electrode and the first conductive path 51B are connected via a thin metal wire 55A fixed by a ball bonding method by thermocompression bonding or a wet bonding method by ultrasonic waves. . Further, a chip capacitor or a passive element is mounted and fixed between the first conductive paths 51B and 51C via a brazing material such as solder or a conductive paste 55B such as Ag paste.

When the pattern shown in FIG. 28 is applied to the present embodiment, the bonding pad 26 has a very small size, but is integrated with the second conductive foil 60B as shown in FIG. Therefore, there is an advantage that the energy of the bonding tool can be transmitted, and the bonding property can be improved. Further, in cutting a thin metal wire after bonding, there is a case where the thin metal wire is subjected to a pull cut.
At this time, since the bonding pad is formed integrally with the second conductive foil 60B, the phenomenon that the bonding pad floats can be eliminated, and the pull cut property can be improved.

Further, as shown in FIG. 7, there is a step of attaching an insulating resin 50 to the first conductive paths 51A to 51C and the curved separation groove 61. This can be achieved by transfer molding, injection molding, dipping or coating. As the resin material, a thermosetting resin such as an epoxy resin can be realized by transfer molding, and a thermoplastic resin such as a polyimide resin and polyphenylene sulfide can be realized by injection molding.

In the present embodiment, the thickness of the insulating resin 50 coated on the surface of the conductive foil 60 is adjusted so as to cover about 100 μm from the top of the circuit element (here, the top of the thin metal wire 55A). Have been. This thickness can be increased or reduced in consideration of strength.

Since the second conductive foil 60B is maintained in a sheet state, it is not individually separated as the first conductive paths 51A to 51C. Accordingly, it can be handled as a sheet-shaped laminated conductive foil 60 integrally, and has a feature that when the insulating resin is molded, the work of transporting to the mold and mounting on the mold becomes extremely easy.

Further, the separation groove 61 having the curved structure 59
Is filled with the insulating resin 50, an anchor effect occurs in this portion, and peeling of the insulating resin 50 can be prevented.
Conversely, it is possible to prevent the conductive path 51 separated in a later step from coming off.

Before coating with the insulating resin 50, for example, a silicone resin or the like may be potted to protect a connection portion of a semiconductor chip or a thin metal wire. Subsequently, there is a step of chemically and / or physically removing the rear surface of the second conductive foil 60B and separating the second conductive foil 60B as the conductive path 51. This removing step can be performed by polishing, grinding, etching, metal evaporation of a laser, or the like.

Here, the etching is performed by employing an alkaline solution such as sodium hydroxide. Since the sodium hydroxide etches Al but not Cu, the sodium hydroxide does not corrode the first conductive paths 51A to 51C.

As a result, the structure is such that the second conductive paths 51S to 51U are exposed in the insulating resin 50. And separation groove 6
1 is exposed to form the separation groove 54 of FIG. Here, all of the second conductive foil 60B may be removed. (See FIG. 7 above.) Finally, the second conductive paths 51S to 51S exposed as necessary
A conductive material such as solder is applied to 1U to complete a circuit device as shown in FIG.

When a conductive film is applied to the back surfaces of the conductive paths 51S to 51U, the conductive film may be formed in advance on the back surface of the conductive foil shown in FIG. In this case, the portion corresponding to the conductive path may be selectively applied. The deposition method is, for example, plating. The conductive film is preferably made of a material having resistance to etching.

In the present manufacturing method, only the transistor and the chip resistor are mounted on the conductive path. However, these may be arranged as a unit in a matrix,
Alternatively, circuits as shown in FIG. 28 may be arranged in a matrix as one unit. In this case, as will be described later, they are individually separated by a dicing device.

By the above manufacturing method, the insulating resin 50
The first conductive paths 51 </ b> A to 51 </ b> C are embedded in the circuit board 53, and the second conductive paths 51 </ b> S to 51 </ b> U are exposed on the back surface of the insulating resin 50.

The insulating resin 50 is a material necessary for embedding the conductive path 51, and does not require an unnecessary supporting substrate 5 unlike the conventional manufacturing method shown in FIG. Therefore,
It is characterized by being able to be manufactured with minimum materials and realizing cost reduction. (Refer to FIG. 1 above) Second Embodiment Explaining a Method of Manufacturing a Circuit Device A method of manufacturing a circuit device 53 will be described again with reference to FIGS. 3 to 7 and FIG. This embodiment is different from the previous embodiment in that Al is used as the first conductive foil 60A and Cu is used as the second conductive foil 60B, and the respective manufacturing steps are substantially the same. Therefore, detail the different parts,
Others are omitted.

As described in the previous embodiment, this laminated conductive foil 60 may be formed by forming a Cu thin film on an Al foil or by forming an Al thin film on a Cu foil. This thin film may be formed by plating, vapor deposition, sputtering, or the like, or may be prepared in the form of a foil, laminated and pressed. (Refer to FIG. 3 above.) Subsequently, a photoresist PR is formed on the laminated conductive foil 60 so that the photoresist PR remains in portions corresponding to the conductive paths. (See FIG. 4 above.) Subsequently, the first conductive foil 60 </ b> A is formed via the photoresist PR.
Is patterned. In this step, an alkali solution such as sodium hydroxide is employed as an etchant.
Since this sodium hydroxide etches Al and does not etch Cu, there is no need to consider the thickness of the second conductive foil as in the previous embodiment. Therefore, the second conductive foil 60B made of Cu can be made thinner or thicker. Also, because of the wet etching, the side surface is curved. Further, if showering is performed, it becomes more curved. In addition, dry etching can be performed anisotropically using Cl2 gas or BCl3 + Cl2 gas (see FIG. 5). Subsequently, there is a step of mounting the circuit element 52. here,
If an Ag paste is applied to the surfaces of the first conductive paths 51A to 51C and sintered, the A
and a metal thin wire 5 of Al or Au.
5A bonding is also possible. Ag also has excellent adhesion to brazing materials such as solder, and can be fixed via the brazing material 55B. (See FIG. 6 above.) Subsequently, there is a step of coating the insulating resin 50. Detail is,
The description is omitted because it is the same as the previous embodiment.

Subsequently, there is a step of patterning second conductive foil 60B. Here, the photoresist PR is patterned so that a portion corresponding to the second conductive path remains,
Etch with an etchant such as ferric chloride, cupric chloride or sodium hydroxide. Preferably, a selective etchant that etches Cu but does not etch Al is preferred. (See FIG. 7 above.) Finally, the second conductive paths 51S to 51S exposed as necessary
A conductive material such as solder is applied to 1U to complete a circuit device as shown in FIG.

Here, Ag may be used as the conductive material. In this case, the back surface of the second conductive foil 60B of FIG.
g may be plated over the entire surface or may be partially plated. Eventually, Ag provided on the back surface of the second conductive paths 51S to 51U and the Cu wiring of the mounting board can be fixed via the brazing material.

Also in this manufacturing method, when the first conductive foil 60A made of Al is etched into the first conductive paths 51A to 51C, the side surface thereof can be formed into a curved structure, so that an anchor effect is generated. Therefore, it is possible to prevent the conductive path from coming off. Third Embodiment Explaining a Method for Manufacturing a Circuit Device Next, a method for manufacturing a circuit device 56 having an eave 58 will be described with reference to FIGS. 9 to 13 and FIG. It is to be noted that the structure is substantially the same as that of the first embodiment (FIGS. 1 and 2) except that a conductive film (hereinafter, referred to as a second material) 70 serving as an eave is applied, and thus detailed description is omitted. I do.

First, as shown in FIG. 9, a first material made of a first material is used.
The laminated conductive foil 60 in which the second material 70 having a small etching rate is coated on the conductive foil 60A of the above is prepared.

For example, when Ni is deposited on a Cu foil, Cu and Ni can be etched at once with ferric chloride, cupric chloride, or the like, and Ni is formed as eaves 58 due to a difference in etching rate. Therefore, it is suitable. Thick solid line is N
i, a conductive film having a thickness of 1 to 10 μm.
m is preferable. In addition, the eaves 5
8 is easily formed.

The second material may cover the first material and a material which can be selectively etched. In this case, first, a film made of the second material is patterned so as to cover the formation regions of the first conductive paths 51A to 51C, and the first conductive foil 60A made of the first material is formed using this film as a mask. This is because the eaves 58 can be formed by etching.
Examples of the second material include Al, Ag, and Au. (Refer to FIG. 9 above.) Subsequently, the first conductive foil 60 excluding at least a region to be the first conductive paths 51A to 51C.
There is a step of removing A.

As shown in FIG. 10, a photoresist PR is formed on Ni70, and the photoresist PR is formed such that the Ni70 excluding the regions that become the first conductive paths 51A to 51C is exposed.
R may be patterned and etched through the photoresist as shown in FIG.

As described above, when etching is performed by using an etchant of ferric chloride or cupric chloride or the like, since the etching rate of Ni70 is lower than the etching rate of Cu60, the eaves 58 appear as the etching proceeds.

The step of mounting the circuit element 52 on the first conductive paths 51A to 51C in which the separation grooves 61 are formed (FIG. 12), the insulating properties are applied to the first conductive paths 51A to 51C and the separation grooves 61. The second conductive path 51 is coated by covering the resin 50 and chemically and / or physically removing the second conductive foil 60B.
Step of separating as S to 51U (FIG. 13), and step of forming a conductive film on the back surface of the conductive path to completion (FIG. 8)
Is the same as that of the previous manufacturing method, and the description thereof is omitted.

As described above, the generation of the double anchor effect by the eaves 58 and the curved structure 59 can prevent the conductive paths from coming off and warping. Fourth Embodiment for Explaining a Method of Manufacturing a Circuit Device Subsequently, IC circuits composed of conductive paths including a plurality of types of circuit elements, wirings, die pads, bonding pads, and the like are arranged in a matrix as one unit, A method of manufacturing a circuit device which is individually separated after sealing to form an IC circuit will be described with reference to FIGS. Here, the description will be made with reference to the structure of FIG. 2, particularly the cross-sectional view of FIG. 2C.
In addition, since this manufacturing method is almost the same as the first embodiment and the second embodiment, the same parts will be briefly described.

First, as shown in FIG. 14, a sheet-like laminated conductive foil 60 is prepared.

When forming the separation groove 61 in the step of FIG. 16, the second conductive foil 60B needs to have a film thickness that can support the first conductive path so as not to be separated. Here, one is Al and the other is Cu, and either may be on top. Further, the sheet-shaped laminated conductive foil 60 is prepared by being wound into a roll with a predetermined width, which may be conveyed to each step described later, or a conductive foil cut to a predetermined size is prepared, It may be transported to each step described later.

Subsequently, at least the first conductive paths 51A to 51A
There is a step of removing the first conductive foil 60A except for a region to be 51C.

First, as shown in FIG. 15, the first conductive foil 60A
A photoresist PR is formed on the first conductive path 51.
The photoresist PR is patterned so as to expose the first conductive foil 60A excluding the regions A to 51C. Then, as shown in FIG. 16, etching may be performed via the photoresist PR.

The side surfaces of the separation grooves 61 formed by etching are roughened, so that the adhesion to the insulating resin 50 is improved.

The side wall of the separation groove 61 is curved because it is anisotropically etched. For this removing step, wet etching or dry etching can be adopted. The curved structure provides a structure in which an anchor effect is generated. (For details, refer to the first embodiment for explaining a method of manufacturing a circuit device.) In FIG. 15, a conductive film having corrosion resistance to an etching solution is selectively coated instead of the photoresist PR. May be. When the conductive film is selectively applied to the portion to be the first conductive path, the conductive film serves as an etching protective film, and the separation groove can be etched without using a resist.

Subsequently, as shown in FIG. 17, there is a step of electrically connecting and mounting the circuit element 52A to the first conductive foil 60A in which the separation groove 61 is formed.

As the circuit element 52A, a transistor,
Semiconductor devices such as diodes and IC chips, and passive devices such as chip capacitors and chip resistors. Although the thickness is increased, a face-down semiconductor element (flip chip) such as CSP or BGA can also be mounted.

Here, the bare transistor chip 52
A is die-bonded to the conductive path 51A, and the emitter electrode and the first conductive path 51B, and the base electrode and the first conductive path 5
1B is connected via a thin metal wire 55A.

Further, as shown in FIG. 18, there is a step of attaching an insulating resin 50 to the laminated conductive foil 60 and the separation groove 61. This can be achieved by transfer molding, injection molding, dipping or coating.

In the present embodiment, the thickness of the insulating resin coated on the surface of the laminated conductive foil 60 is adjusted so as to cover about 100 μm from the top of the circuit element.
This thickness can be increased or reduced in consideration of strength.

In the separation groove 61, since the second conductive foil 60B remains in a sheet shape, the first conductive foil 60A is not individually separated as the first conductive paths 51A to 51C. Accordingly, it can be handled as a sheet-shaped laminated conductive foil 60 integrally, and has a feature that when the insulating resin is molded, the work of transporting to the mold and mounting on the mold becomes extremely easy.

Subsequently, there is a step of chemically and / or physically removing the back surface of second conductive foil 60B and separating it as conductive path 51. Here, the removing step is performed by etching. As a result, the second surface of the insulating resin 50
Of the conductive paths 51S to 51U are exposed.

Further, as shown in FIG. 19, a conductive material such as solder is applied to the exposed second conductive paths 51S to 51U.

Finally, as shown in FIG. 20, there is a step of separating each circuit element to complete a circuit device.

The separation line is indicated by an arrow and can be realized by dicing, cutting, pressing, chocolate break, or the like. When a chocolate break is adopted, a protrusion may be formed on the mold so that a groove is formed in the separation line when the insulating resin is coated.

In particular, dicing is preferred because it is frequently used in a normal method of manufacturing a semiconductor device and can separate very small objects. The manufacturing method described in the first to third embodiments can also implement a complicated pattern as shown in FIG. In particular, the wiring that is bent and formed integrally with the bonding pad 26 and has the other end electrically connected to the circuit element has a narrow width and a long length. Therefore, warpage due to heat is extremely large, and peeling is a problem in the conventional structure. However, in the present invention, since the wiring is embedded and supported by the insulating resin, it is possible to prevent the wiring itself from warping, peeling, or falling off. In addition, the bonding pad itself has a small plane area, and in the conventional structure, the bonding pad is peeled off. However, in the present invention, the bonding pad is embedded in the insulating resin as described above, and furthermore, the insulating resin has an anchor effect. Since it is supported with its curved structure, it has an advantage that it can be prevented from coming off.

Further, there is an advantage that a circuit device in which a circuit is embedded in the insulating resin 50 can be realized. In the case of the conventional structure, it is as if a circuit is incorporated in a printed circuit board or a ceramic substrate. This will be described in a later mounting method. The right side of FIG. 27 shows a flow in which the present invention is simply summarized. Preparation of laminated conductive foil, Ag
Alternatively, a circuit device can be realized by nine steps of plating of Ni or the like, etching of a first conductive foil, die bonding, wire bonding, transfer molding, etching of a second conductive foil, back surface treatment of a conductive path, and dicing. Moreover, all processes can be performed in-house without supplying a supporting substrate from a manufacturer. An embodiment describing types of circuit devices and a method for mounting them.

FIG. 21 shows a face-down type circuit element 8.
9 shows a circuit device 81 in which a “0” is mounted. As the circuit element 80, a bare semiconductor chip, a CSP or BGA (flip chip) whose surface is sealed, and the like are applicable. FIG. 22 shows a circuit device 83 on which passive elements 82 such as a chip resistor and a chip resistor are mounted. They are,
Because it is thin and sealed with insulating resin,
It has excellent environmental resistance.

FIG. 23 illustrates the real layer structure. First, FIG. 23A shows conductive paths 85 formed on a mounting board 84 such as a printed board, a metal board, or a ceramic board.
The circuit devices 53, 56, and 8 of the present invention described so far
1, 83 are mounted.

In particular, since the conductive path 51A to which the back surface of the semiconductor chip 52 is fixed is thermally coupled to the conductive path 85 of the mounting board 84, the heat of the circuit device is radiated through the conductive path 85. be able to. When a metal substrate is used as the mounting substrate 84, the heat dissipation of the metal substrate is also helped, and the temperature of the semiconductor chip 52 can be further reduced. Therefore, the driving capability of the semiconductor chip can be improved.

For example, power MOS, IGBT, SIT,
Transistor for driving large current, IC for driving large current (M
OS type, BIP type, Bi-CMOS type) memory element and the like are preferable.

As the metal substrate, an Al substrate, a Cu substrate, or an Fe substrate is preferable, and an insulating resin and / or an oxide film is formed in consideration of a short circuit with the conductive path 85.

FIG. 23B shows the circuit device 90 of FIG.
This is used as a substrate 84 of 3A. This is the most important feature of the present invention. That is, in a conventional printed board or ceramic board, the through hole TH is formed in the board at most, but the present invention has a feature that a board module in which an IC circuit is built can be realized. For example, at least one circuit (may be built in as a system) is built in a printed circuit board.

Further, conventionally, a printed circuit board, a ceramic substrate, or the like is required as a support substrate. However, the present invention can realize a substrate module that does not require the support substrate. This can reduce the thickness and the weight as compared with a hybrid substrate composed of a printed substrate, a ceramic substrate or a metal substrate.

Since the circuit device 90 can be used as a support substrate and circuit elements can be mounted on exposed conductive paths,
A high-performance board module can be realized. In particular, if the present circuit device is used as a supporting substrate and the present circuit device 91 is mounted thereon as an element, a lighter and thinner substrate module can be realized.

Therefore, according to these mounting modes, a small and lightweight electronic device in which this module is mounted can be realized.

The hatched portion indicated by reference numeral 93 is
It is an insulating film. For example, a polymer film such as a solder resist is preferable. By forming this, it is possible to prevent a short circuit between the conductive path embedded in the substrate 90 and the electrodes formed on the circuit element 91 and the like. Further, advantages of the circuit device will be described with reference to FIG. In the conventional mounting method, a semiconductor maker forms a package type semiconductor device and a flip chip, and a set maker mounts a semiconductor device supplied by a semiconductor maker and a passive element supplied by a component maker on a printed circuit board. Then, this was assembled into a set as a module to form an electronic device. However, in the present circuit device, the semiconductor device itself can be adopted as a mounting substrate, so that a semiconductor maker can complete a mounting substrate module using a post-process and supply it to a set maker. Therefore, the set maker can largely omit the device mounting on this substrate.

[0126]

As is evident from the above description, according to the present invention, the circuit device is constituted by the minimum required of the circuit device, the conductive path and the insulating resin, so that the circuit device has no waste of resources. Therefore, there is no extra component until completion, and a circuit device that can greatly reduce the cost can be realized. Further, by setting the coating thickness of the insulating resin and the thickness of the conductive foil to optimal values, it is possible to realize a very small, thin, and lightweight circuit device. Furthermore, wiring in which the phenomenon of warpage or peeling is remarkable is
These problems can be solved because they are embedded in and supported by the insulating resin.

Further, since only the back surface of the conductive path is exposed from the insulating resin, the back surface of the conductive path can be immediately used for connection to the outside, and the back electrode and the through hole of the conventional structure as shown in FIG. 25 are unnecessary. It has the advantage that can be.

In addition, when the circuit element is directly fixed via a conductive film such as brazing material, Au, Ag or the like, since the back surface of the conductive path is exposed, the heat generated from the circuit element is directly transferred via the conductive path. Heat can be transmitted to the mounting board. In particular, this heat dissipation makes it possible to mount a power element.

Further, that the side surfaces of the conductive paths have a curved structure, and / or that the eaves attached to the conductive paths can be formed by forming a coating made of a second material on the surface of the conductive paths. As a result, an anchor effect can be generated, and the conductive path can be prevented from warping or coming off.

In the method of manufacturing a circuit device according to the present invention, the conductive foil itself, which is the material of the conductive path, functions as a support substrate, and is used until the separation groove is formed, the circuit element is mounted, and the insulating resin is applied. When the whole is supported by the conductive foil and the conductive foil is separated as each conductive path, the insulating resin is used as a supporting substrate to function. Therefore, the circuit element, the conductive foil, and the insulating resin can be manufactured with the minimum necessary. As described in the conventional example, a support substrate is not required for originally configuring the circuit device, and the cost can be reduced. In addition, the need for a support substrate, the fact that the conductive path is embedded in the insulating resin, and the ability to adjust the thickness of the insulating resin and the conductive foil allow the formation of extremely thin circuit devices. There is also. Further, a curved structure can be formed in the step of forming the separation groove, and a structure having an anchor effect can be realized at the same time.

As is clear from FIG. 27, the step of forming a through-hole, the step of printing a conductor (in the case of a ceramic substrate), and the like can be omitted, so that the manufacturing process can be greatly reduced and the entire process can be performed internally. Has advantages. In addition, no frame mold is required at all, and the manufacturing method has a very short delivery time.

Next, since the conductive paths can be handled without being individually separated, workability is improved in the subsequent step of coating the insulating resin.

Finally, the circuit device can be used as a support substrate, and the circuit elements can be mounted on the exposed conductive paths.
A high-performance board module can be realized. In particular, if the present circuit device is used as a supporting substrate and the present circuit device 91 is mounted thereon as an element, a lighter and thinner substrate module can be realized.

[Brief description of the drawings]

FIG. 1 is a diagram illustrating a circuit device of the present invention.

FIG. 2 is a diagram illustrating a circuit device according to the present invention.

FIG. 3 is a diagram illustrating a method for manufacturing a circuit device according to the present invention.

FIG. 4 is a diagram illustrating a method for manufacturing a circuit device according to the present invention.

FIG. 5 is a diagram illustrating a method for manufacturing a circuit device according to the present invention.

FIG. 6 is a diagram illustrating a method for manufacturing a circuit device according to the present invention.

FIG. 7 is a diagram illustrating a method for manufacturing a circuit device according to the present invention.

FIG. 8 is a diagram illustrating a circuit device according to the present invention.

FIG. 9 is a diagram illustrating a method for manufacturing a circuit device according to the present invention.

FIG. 10 is a diagram illustrating a method for manufacturing a circuit device according to the present invention.

FIG. 11 is a diagram illustrating a method for manufacturing a circuit device according to the present invention.

FIG. 12 is a diagram illustrating a method for manufacturing a circuit device according to the present invention.

FIG. 13 is a diagram illustrating a method for manufacturing a circuit device according to the present invention.

FIG. 14 is a diagram illustrating a method for manufacturing a circuit device according to the present invention.

FIG. 15 is a diagram illustrating a method for manufacturing a circuit device according to the present invention.

FIG. 16 is a diagram illustrating a method for manufacturing a circuit device according to the present invention.

FIG. 17 is a diagram illustrating a method for manufacturing a circuit device according to the present invention.

FIG. 18 is a diagram illustrating a method for manufacturing a circuit device according to the present invention.

FIG. 19 is a diagram illustrating a method for manufacturing a circuit device according to the present invention.

FIG. 20 is a diagram illustrating a method for manufacturing a circuit device according to the present invention.

FIG. 21 is a diagram illustrating a circuit device of the present invention.

FIG. 22 is a diagram illustrating a circuit device according to the present invention.

FIG. 23 is a diagram illustrating a method for mounting the circuit device of the present invention.

FIG. 24 is a diagram illustrating a mounting structure of a conventional circuit device.

FIG. 25 is a diagram illustrating a conventional circuit device.

FIG. 26 is a diagram illustrating a method for manufacturing a conventional circuit device.

FIG. 27 is a diagram illustrating a method for manufacturing a circuit device according to the related art and the present invention.

FIG. 28 is a pattern diagram of an IC circuit applied to the circuit devices of the related art and the present invention.

FIG. 29 is a diagram illustrating the positioning of a semiconductor maker and a set maker.

[Explanation of symbols]

 Reference Signs List 50 Insulating resin 51 Conductive path 52 Circuit element 53 Circuit device 54 Separation groove 58 Eave 60 Laminated conductive foil 60A First conductive foil 60B Second conductive foil

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01L 25/18 H01L 25/04 Z (72) Inventor Junji Sakamoto 2-5 Keihanhondori, Moriguchi-shi, Osaka No. 5 Sanyo Electric Co., Ltd. (72) Inventor Shigeaki Mashimo 2-5-5 Keihanhondori 2-chome, Moriguchi-shi, Osaka Pref. Sanyo Electric Co., Ltd. 5-5 Sanyo Electric Co., Ltd. (72) Inventor Eiji Maehara 2-5-5 Keihanhondori, Moriguchi-shi, Osaka 2-72 Sanyo Electric Co., Ltd. Address Kanto Sanyo Electronics Co., Ltd. F-term (reference) 4M109 AA01 BA01 FA02 5F067 AA01 AB04 BC12 CC02 CC07 DF01 DF20

Claims (17)

[Claims] 1. A conductive path which is patterned into a predetermined shape and has a curved side surface is supported by a conductive foil, and a desired circuit element is electrically connected and fixed on a desired conductive path, and the circuit element and the conductive A method for manufacturing a circuit device, comprising: covering a path with an insulating resin; and removing the conductive foil except for at least a portion corresponding to the conductive path. 2. A step of preparing a laminated conductive foil in which a second conductive foil is laminated on a back surface of a first conductive foil, and forming a separation groove in the first conductive foil except at least a region serving as a conductive path. Forming a first conductive path having a curved side surface; electrically connecting and fixing a desired circuit element on a desired first conductive path; Covering the first conductive path and molding with an insulating resin so as to fill the separation groove; removing the second conductive foil at a portion corresponding to the separation groove; Forming a second conductive path on the back surface of the circuit device. 3. A step of preparing a laminated conductive foil in which a second conductive foil is laminated on a back surface of a first conductive foil; and a corrosion-resistant conductive film on at least a region to be a conductive path on the surface of the first conductive foil. Forming a separation groove in the conductive foil excluding at least a region serving as a conductive path to form a first conductive path having a curved side surface; and forming a desired conductive path on the first conductive path. Fixing a circuit element, forming connection means for electrically connecting an electrode of the circuit element and a desired first conductive path, and the circuit element;
Covering the connection means and the first conductive path, molding with an insulating resin so as to fill the separation groove, and fitting the conductive path and the insulating resin; and providing the separation groove. Remove the second conductive foil,
Forming a second conductive path on the back surface of the first conductive path. 4. A step of preparing a laminated conductive foil in which a second conductive foil is laminated on a back surface of the first conductive foil, and separating the first conductive foil except at least a region serving as a conductive path with a separation groove. Forming a conductive path having a curved side surface, fixing a circuit element on the desired conductive path, and electrically connecting the electrode of the circuit element and the desired first conductive path. Forming a connecting means for connecting and the circuit element,
The connection means and the first conductive path are covered, and molded with an insulating resin so as to fill the separation groove.
Fitting the conductive path and the insulating resin, and removing the first conductive foil not provided with the separation groove,
A method of manufacturing a circuit device, comprising: forming a second conductive path on the back surface of the first conductive path; and separating the insulating resin into individual circuit devices. . 5. A step of preparing a laminated conductive foil in which a second conductive foil is laminated on the back surface of a conductive first conductive foil; and providing a corrosion-resistant conductive film on at least a region serving as a conductive path on the surface of the first conductive foil. A step of forming a coating, a step of forming a separation groove in the first conductive foil excluding at least a region to be a first conductive path to form a conductive path having a curved side surface, Fixing a circuit element on one conductive path, forming connection means for electrically connecting an electrode of the circuit element to a desired first conductive path, covering the circuit element, and separating the circuit element. Molding with an insulating resin so as to fill the groove, fitting the first conductive path and the insulating resin, and removing the second conductive foil not provided with the separation groove. Forming a second conductive path on the back surface of the first conductive path; Cutting the resin to separate the resin into individual circuit devices. 6. The second conductive foil is made of copper, aluminum,
The method for manufacturing a circuit device according to claim 2, wherein the circuit device is made of one of iron and nickel. 7. The method for manufacturing a circuit device according to claim 2, wherein said first conductive foil is formed by plating. 8. The method according to claim 2, wherein the laminated conductive foil has a structure in which copper is plated on a conductive foil made of aluminum. 9. The method according to claim 8, wherein the first conductive foil is made of aluminum or copper. 10. The method according to claim 3, wherein the conductive film is formed by plating with nickel or silver. 11. The method according to claim 2, wherein the separation groove selectively formed in the first conductive foil is formed by chemical or physical etching. Manufacturing method of a circuit device. 12. The method according to claim 3, wherein the conductive film is used as a part of a mask when forming the isolation groove. 13. The circuit element according to claim 1, wherein one or both of a semiconductor bare chip, a flip chip, a chip circuit component, a package type semiconductor element, and a CSP are fixed to the circuit element. A method for manufacturing the described circuit device. 14. The method according to claim 2, wherein said connecting means is formed by wire bonding or a brazing material. 15. The method for manufacturing a circuit device according to claim 1, wherein the insulating resin is attached by transfer molding. 16. The method for manufacturing a circuit device according to claim 4, wherein the circuit device is separated into individual circuit devices by dicing. 17. The method of manufacturing a circuit device according to claim 1, wherein said conductive path is at least a wiring.