JP2001217422A5 - - Google Patents
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- JP2001217422A5 JP2001217422A5 JP2000022022A JP2000022022A JP2001217422A5 JP 2001217422 A5 JP2001217422 A5 JP 2001217422A5 JP 2000022022 A JP2000022022 A JP 2000022022A JP 2000022022 A JP2000022022 A JP 2000022022A JP 2001217422 A5 JP2001217422 A5 JP 2001217422A5
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Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000022022A JP4493779B2 (ja) | 2000-01-31 | 2000-01-31 | 半導体装置およびその作製方法 |
| TW090101346A TW479370B (en) | 2000-01-31 | 2001-01-19 | Semiconductor device and method of producing the same |
| US09/771,625 US6673659B2 (en) | 2000-01-31 | 2001-01-30 | Semiconductor device and method of producing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000022022A JP4493779B2 (ja) | 2000-01-31 | 2000-01-31 | 半導体装置およびその作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001217422A JP2001217422A (ja) | 2001-08-10 |
| JP2001217422A5 true JP2001217422A5 (enExample) | 2006-11-16 |
| JP4493779B2 JP4493779B2 (ja) | 2010-06-30 |
Family
ID=18548367
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000022022A Expired - Fee Related JP4493779B2 (ja) | 2000-01-31 | 2000-01-31 | 半導体装置およびその作製方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US6673659B2 (enExample) |
| JP (1) | JP4493779B2 (enExample) |
| TW (1) | TW479370B (enExample) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6573195B1 (en) * | 1999-01-26 | 2003-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device by performing a heat-treatment in a hydrogen atmosphere |
| US6461899B1 (en) | 1999-04-30 | 2002-10-08 | Semiconductor Energy Laboratory, Co., Ltd. | Oxynitride laminate “blocking layer” for thin film semiconductor devices |
| CN100485943C (zh) * | 1999-06-02 | 2009-05-06 | 株式会社半导体能源研究所 | 半导体器件 |
| JP4562835B2 (ja) * | 1999-11-05 | 2010-10-13 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2001177101A (ja) | 1999-12-20 | 2001-06-29 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JP2004247077A (ja) * | 2003-02-12 | 2004-09-02 | Semiconductor Energy Lab Co Ltd | 発光装置及びその作製方法 |
| DE10335099B4 (de) * | 2003-07-31 | 2006-06-08 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zum Verbessern der Dickengleichförmigkeit von Siliziumnitridschichten für mehrere Halbleiterscheiben |
| JP4232675B2 (ja) * | 2004-04-01 | 2009-03-04 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
| JP4649896B2 (ja) | 2004-07-09 | 2011-03-16 | 日本電気株式会社 | 半導体装置及びその製造方法、並びにこの半導体装置を備えた表示装置 |
| US20060181266A1 (en) * | 2005-02-14 | 2006-08-17 | Panelvision Technology, A California Corporation | Flat panel display inspection system |
| KR101133767B1 (ko) * | 2005-03-09 | 2012-04-09 | 삼성전자주식회사 | 유기 박막 트랜지스터 표시판 및 그 제조 방법 |
| JP2006269808A (ja) * | 2005-03-24 | 2006-10-05 | Mitsubishi Electric Corp | 半導体装置および画像表示装置 |
| KR100703971B1 (ko) * | 2005-06-08 | 2007-04-06 | 삼성전자주식회사 | 반도체 집적 회로 장치 및 그 제조 방법 |
| EP1998373A3 (en) | 2005-09-29 | 2012-10-31 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device having oxide semiconductor layer and manufacturing method thereof |
| US7498270B2 (en) * | 2005-09-30 | 2009-03-03 | Tokyo Electron Limited | Method of forming a silicon oxynitride film with tensile stress |
| US7588883B2 (en) | 2006-05-09 | 2009-09-15 | United Microelectronics Corp. | Method for forming a gate and etching a conductive layer |
| JP2008258345A (ja) * | 2007-04-04 | 2008-10-23 | Sony Corp | 薄膜トランジスタおよびその製造方法ならびに表示装置 |
| US8119540B2 (en) * | 2008-03-28 | 2012-02-21 | Tokyo Electron Limited | Method of forming a stressed passivation film using a microwave-assisted oxidation process |
| US7807586B2 (en) * | 2008-03-28 | 2010-10-05 | Tokyo Electron Limited | Method of forming a stressed passivation film using a non-ionizing electromagnetic radiation-assisted oxidation process |
| CN102484135B (zh) * | 2009-09-04 | 2016-01-20 | 株式会社东芝 | 薄膜晶体管及其制造方法 |
| DE102010013038B4 (de) * | 2010-03-26 | 2012-01-19 | Schüco Tf Gmbh & Co. Kg | Verfahren zum Herstellen einer Fotovoltaikzelle |
| JP5827578B2 (ja) | 2011-02-14 | 2015-12-02 | 株式会社半導体エネルギー研究所 | 光学素子の作製方法 |
| KR101912888B1 (ko) * | 2011-10-07 | 2018-12-28 | 어플라이드 머티어리얼스, 인코포레이티드 | 아르곤 가스 희석으로 실리콘 함유 층을 증착하기 위한 방법들 |
| JP6026395B2 (ja) * | 2013-12-05 | 2016-11-16 | 富士フイルム株式会社 | 有機機能層付き基板およびその製造方法 |
| KR102223678B1 (ko) | 2014-07-25 | 2021-03-08 | 삼성디스플레이 주식회사 | 표시장치용 백플레인 및 그 제조 방법 |
| CN108493238B (zh) * | 2018-03-28 | 2022-11-25 | 京东方科技集团股份有限公司 | 薄膜晶体管及制作方法、阵列基板、显示装置 |
| KR20220105708A (ko) * | 2021-01-20 | 2022-07-28 | 삼성디스플레이 주식회사 | 색변환 패널 및 이를 포함하는 표시 장치 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5470768A (en) | 1992-08-07 | 1995-11-28 | Fujitsu Limited | Method for fabricating a thin-film transistor |
| TW264575B (enExample) | 1993-10-29 | 1995-12-01 | Handotai Energy Kenkyusho Kk | |
| US5923962A (en) | 1993-10-29 | 1999-07-13 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device |
| JP3431033B2 (ja) | 1993-10-29 | 2003-07-28 | 株式会社半導体エネルギー研究所 | 半導体作製方法 |
| JP3464287B2 (ja) | 1994-09-05 | 2003-11-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP3645377B2 (ja) | 1996-10-24 | 2005-05-11 | 株式会社半導体エネルギー研究所 | 集積回路の作製方法 |
| JP3597331B2 (ja) | 1996-10-24 | 2004-12-08 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2000012864A (ja) | 1998-06-22 | 2000-01-14 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JP3977974B2 (ja) * | 1998-12-29 | 2007-09-19 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US6461899B1 (en) | 1999-04-30 | 2002-10-08 | Semiconductor Energy Laboratory, Co., Ltd. | Oxynitride laminate “blocking layer” for thin film semiconductor devices |
| JP4463377B2 (ja) * | 1999-04-30 | 2010-05-19 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
| JP2001177101A (ja) * | 1999-12-20 | 2001-06-29 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| TW521226B (en) | 2000-03-27 | 2003-02-21 | Semiconductor Energy Lab | Electro-optical device |
-
2000
- 2000-01-31 JP JP2000022022A patent/JP4493779B2/ja not_active Expired - Fee Related
-
2001
- 2001-01-19 TW TW090101346A patent/TW479370B/zh not_active IP Right Cessation
- 2001-01-30 US US09/771,625 patent/US6673659B2/en not_active Expired - Lifetime