JP2001215714A - 感放射線性樹脂組成物 - Google Patents

感放射線性樹脂組成物

Info

Publication number
JP2001215714A
JP2001215714A JP2000025548A JP2000025548A JP2001215714A JP 2001215714 A JP2001215714 A JP 2001215714A JP 2000025548 A JP2000025548 A JP 2000025548A JP 2000025548 A JP2000025548 A JP 2000025548A JP 2001215714 A JP2001215714 A JP 2001215714A
Authority
JP
Japan
Prior art keywords
group
acid
carbon atoms
compound
represented
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP2000025548A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001215714A5 (enExample
Inventor
Akira Takahashi
表 高橋
Kenichiro Sato
健一郎 佐藤
Shoichiro Yasunami
昭一郎 安波
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Priority to JP2000025548A priority Critical patent/JP2001215714A/ja
Publication of JP2001215714A publication Critical patent/JP2001215714A/ja
Publication of JP2001215714A5 publication Critical patent/JP2001215714A5/ja
Abandoned legal-status Critical Current

Links

Landscapes

  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
JP2000025548A 2000-02-02 2000-02-02 感放射線性樹脂組成物 Abandoned JP2001215714A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000025548A JP2001215714A (ja) 2000-02-02 2000-02-02 感放射線性樹脂組成物

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000025548A JP2001215714A (ja) 2000-02-02 2000-02-02 感放射線性樹脂組成物

Publications (2)

Publication Number Publication Date
JP2001215714A true JP2001215714A (ja) 2001-08-10
JP2001215714A5 JP2001215714A5 (enExample) 2005-12-22

Family

ID=18551395

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000025548A Abandoned JP2001215714A (ja) 2000-02-02 2000-02-02 感放射線性樹脂組成物

Country Status (1)

Country Link
JP (1) JP2001215714A (enExample)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002278073A (ja) * 2001-03-16 2002-09-27 Jsr Corp 感放射線性樹脂組成物
JP2002287339A (ja) * 2000-12-05 2002-10-03 Kansai Research Institute 活性成分及びそれを用いた感光性樹脂組成物
JP2003186197A (ja) * 2001-12-19 2003-07-03 Sony Corp レジスト材料及び露光方法
JP2003186198A (ja) * 2001-12-19 2003-07-03 Sony Corp レジスト材料及び露光方法
EP1741705A1 (en) 2005-07-07 2007-01-10 Shin-Etsu Chemical Co., Ltd. Fluorinated cyclic structure-bearing silicon compounds and silicone resins, resist compositions using the same, and patterning process
US7297464B2 (en) 2003-10-07 2007-11-20 Hitachi Chemical Co., Ltd. Radiation curable composition, storing method thereof, forming method of cured film, patterning method, use of pattern, electronic components and optical waveguide
US7485408B2 (en) 2006-03-14 2009-02-03 Shin-Etsu Chemical Co., Ltd. Fluorine-containing silicon compounds, silicone resins, resist compositions, and patterning process
US7510816B2 (en) 2004-10-05 2009-03-31 Shin-Estu Chemical Co., Ltd. Silicon-containing resist composition and patterning process
US7550247B2 (en) 2004-08-19 2009-06-23 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process
US7745094B2 (en) 2006-02-13 2010-06-29 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process using the same
US8034545B2 (en) 2003-10-07 2011-10-11 Hitachi Chemical Co., Ltd. Radiation curable composition, storing method thereof, forming method of cured film, patterning method, use of pattern, electronic components and optical waveguide
WO2011135947A1 (ja) * 2010-04-28 2011-11-03 Jsr株式会社 吐出ノズル式塗布法用ポジ型感放射線性組成物、表示素子用層間絶縁膜及びその形成方法

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002287339A (ja) * 2000-12-05 2002-10-03 Kansai Research Institute 活性成分及びそれを用いた感光性樹脂組成物
JP2002278073A (ja) * 2001-03-16 2002-09-27 Jsr Corp 感放射線性樹脂組成物
JP2003186197A (ja) * 2001-12-19 2003-07-03 Sony Corp レジスト材料及び露光方法
JP2003186198A (ja) * 2001-12-19 2003-07-03 Sony Corp レジスト材料及び露光方法
US7297464B2 (en) 2003-10-07 2007-11-20 Hitachi Chemical Co., Ltd. Radiation curable composition, storing method thereof, forming method of cured film, patterning method, use of pattern, electronic components and optical waveguide
US8034545B2 (en) 2003-10-07 2011-10-11 Hitachi Chemical Co., Ltd. Radiation curable composition, storing method thereof, forming method of cured film, patterning method, use of pattern, electronic components and optical waveguide
US7550247B2 (en) 2004-08-19 2009-06-23 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process
US7510816B2 (en) 2004-10-05 2009-03-31 Shin-Estu Chemical Co., Ltd. Silicon-containing resist composition and patterning process
EP1741705A1 (en) 2005-07-07 2007-01-10 Shin-Etsu Chemical Co., Ltd. Fluorinated cyclic structure-bearing silicon compounds and silicone resins, resist compositions using the same, and patterning process
US7638256B2 (en) 2005-07-07 2009-12-29 Shin-Etsu Chemical Co., Ltd. Fluorinated cyclic structure-bearing silicon compounds and silicone resins, resist compositions using the same, and patterning process
US7745094B2 (en) 2006-02-13 2010-06-29 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process using the same
US7485408B2 (en) 2006-03-14 2009-02-03 Shin-Etsu Chemical Co., Ltd. Fluorine-containing silicon compounds, silicone resins, resist compositions, and patterning process
WO2011135947A1 (ja) * 2010-04-28 2011-11-03 Jsr株式会社 吐出ノズル式塗布法用ポジ型感放射線性組成物、表示素子用層間絶縁膜及びその形成方法
JP2011248331A (ja) * 2010-04-28 2011-12-08 Jsr Corp 吐出ノズル式塗布法用ポジ型感放射線性組成物、表示素子用層間絶縁膜及びその形成方法
CN102870045A (zh) * 2010-04-28 2013-01-09 Jsr株式会社 喷出喷嘴式涂布法用正型射线敏感性组合物、显示元件用层间绝缘膜及其形成方法
CN102870045B (zh) * 2010-04-28 2014-11-19 Jsr株式会社 喷出喷嘴式涂布法用正型射线敏感性组合物、显示元件用层间绝缘膜及其形成方法

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