JP2001210915A - 半導体発光装置 - Google Patents

半導体発光装置

Info

Publication number
JP2001210915A
JP2001210915A JP2000014289A JP2000014289A JP2001210915A JP 2001210915 A JP2001210915 A JP 2001210915A JP 2000014289 A JP2000014289 A JP 2000014289A JP 2000014289 A JP2000014289 A JP 2000014289A JP 2001210915 A JP2001210915 A JP 2001210915A
Authority
JP
Japan
Prior art keywords
layer
ridge
light emitting
semiconductor
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000014289A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001210915A5 (https=
Inventor
Shiro Uchida
史朗 内田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2000014289A priority Critical patent/JP2001210915A/ja
Priority to TW090101294A priority patent/TW497308B/zh
Priority to KR1020010003610A priority patent/KR100763424B1/ko
Priority to US09/765,580 priority patent/US6492660B2/en
Publication of JP2001210915A publication Critical patent/JP2001210915A/ja
Publication of JP2001210915A5 publication Critical patent/JP2001210915A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3086—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP2000014289A 2000-01-24 2000-01-24 半導体発光装置 Pending JP2001210915A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2000014289A JP2001210915A (ja) 2000-01-24 2000-01-24 半導体発光装置
TW090101294A TW497308B (en) 2000-01-24 2001-01-19 Semiconductor light emitting device
KR1020010003610A KR100763424B1 (ko) 2000-01-24 2001-01-22 반도체 발광 장치
US09/765,580 US6492660B2 (en) 2000-01-24 2001-01-22 Semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000014289A JP2001210915A (ja) 2000-01-24 2000-01-24 半導体発光装置

Publications (2)

Publication Number Publication Date
JP2001210915A true JP2001210915A (ja) 2001-08-03
JP2001210915A5 JP2001210915A5 (https=) 2006-11-02

Family

ID=18541767

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000014289A Pending JP2001210915A (ja) 2000-01-24 2000-01-24 半導体発光装置

Country Status (4)

Country Link
US (1) US6492660B2 (https=)
JP (1) JP2001210915A (https=)
KR (1) KR100763424B1 (https=)
TW (1) TW497308B (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100396675B1 (ko) * 2001-11-07 2003-09-02 엘지전자 주식회사 플라즈마 처리를 이용한 청색 반도체 레이저의 제조 방법
US6801559B2 (en) 2002-03-08 2004-10-05 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor laser
US6937631B2 (en) 2002-03-20 2005-08-30 Hitachi, Ltd. Semiconductor laser device
JP2007109843A (ja) * 2005-10-13 2007-04-26 Rohm Co Ltd 半導体レーザ製造方法及び半導体レーザ

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2444273C (en) * 2001-04-12 2012-05-22 Nichia Corporation Gallium nitride semiconductor device
US6806197B2 (en) * 2001-08-07 2004-10-19 Micron Technology, Inc. Method of forming integrated circuitry, and method of forming a contact opening
TWI262606B (en) * 2001-08-30 2006-09-21 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor-element and its production method
JP4077348B2 (ja) * 2003-03-17 2008-04-16 松下電器産業株式会社 半導体レーザ装置およびそれを用いた光ピックアップ装置
JP2007012729A (ja) * 2005-06-29 2007-01-18 Toshiba Corp 窒化ガリウム系半導体レーザ装置
KR100770440B1 (ko) 2006-08-29 2007-10-26 삼성전기주식회사 질화물 반도체 발광소자
JP2008066476A (ja) * 2006-09-06 2008-03-21 Toshiba Corp 半導体レーザ装置
TWI384657B (zh) * 2009-07-15 2013-02-01 Ind Tech Res Inst 氮化物半導體發光二極體元件
JP5660940B2 (ja) * 2010-04-27 2015-01-28 住友電工デバイス・イノベーション株式会社 光半導体装置の製造方法
US8933434B2 (en) * 2013-05-20 2015-01-13 International Business Machines Company Elemental semiconductor material contact for GaN-based light emitting diodes
US9048363B2 (en) * 2013-05-20 2015-06-02 International Business Machines Corporation Elemental semiconductor material contact for high indium content InGaN light emitting diodes
JP7563696B2 (ja) * 2020-04-14 2024-10-08 旭化成株式会社 紫外レーザダイオードの製造方法および紫外レーザダイオード

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4018177B2 (ja) * 1996-09-06 2007-12-05 株式会社東芝 窒化ガリウム系化合物半導体発光素子
KR100527349B1 (ko) * 1997-01-09 2005-11-09 니치아 카가쿠 고교 가부시키가이샤 질화물반도체소자
JPH11251685A (ja) * 1998-03-05 1999-09-17 Toshiba Corp 半導体レーザ

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100396675B1 (ko) * 2001-11-07 2003-09-02 엘지전자 주식회사 플라즈마 처리를 이용한 청색 반도체 레이저의 제조 방법
US6801559B2 (en) 2002-03-08 2004-10-05 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor laser
US7186579B2 (en) 2002-03-08 2007-03-06 Toyoda Gosei Co., Ltd. Method for producing a group III nitride compound semiconductor laser
US6937631B2 (en) 2002-03-20 2005-08-30 Hitachi, Ltd. Semiconductor laser device
JP2007109843A (ja) * 2005-10-13 2007-04-26 Rohm Co Ltd 半導体レーザ製造方法及び半導体レーザ

Also Published As

Publication number Publication date
US6492660B2 (en) 2002-12-10
TW497308B (en) 2002-08-01
KR20010074543A (ko) 2001-08-04
KR100763424B1 (ko) 2007-10-04
US20010010373A1 (en) 2001-08-02

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