JP2001210642A - Semiconductor device and its manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent the contact failure between a probe and a probe pad electrode due to the repeated usage of the inspection probe, in a semiconductor device having the probe pad electrode that is connected to a bonding pad elec trode. SOLUTION: An interlayer insulation film 16 is formed on an insulation film 12 for covering a semiconductor substrate 10 via a wiring layer 14. A connection hole 16a, and at the same time an electrode hole 16b are provided on the insulation film 16. A conductive material with improved hardness, such as W (tungsten), is deposited on the upper surface of the substrate and is subjected to etch back is made, thus forming a probe pad electrode 18 in the electrode hole 16b. A bonding pad electrode 20, that is connected to the wiring layer 14 via the connection hole 16a by patterning while depositing a conductive material such as Al alloy, is deposited on the upper surface of the substrate, and a connection layer 20A for connecting the electrode 20 to the electrode 18 are formed. The electrode 18 may be formed similarly as a W layer 18a or may be formed, using a TiN film as a portion of the electrode 20.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to an LS having a probe pad electrode connected to a bonding pad electrode.
For semiconductor devices such as I and the manufacturing method thereof, in particular, the probe pad electrode is made of a conductive material having a higher hardness than the bonding pad electrode so as to eliminate contact failure between the probe and the probe pad electrode due to repeated use of the inspection probe. It was done.

[0002]

2. Description of the Related Art Conventionally, as a semiconductor device such as an LSI,
There is known an IC (integrated circuit) chip region formed on a semiconductor wafer provided with a probe pad electrode connected to a bonding pad electrode (see, for example, Japanese Patent Application Laid-Open No. Hei 7-111282). According to such a semiconductor device, when a wafer probing test is performed before an assembling process, the inspection is performed by bringing the inspection probe into contact with the probe pad electrode instead of the bonding pad electrode. Can be prevented beforehand from being damaged by being rubbed by the tip of the inspection probe.

[0003]

According to the prior art described above, the probe pad electrode is usually made of a conductive material such as Al or an Al alloy in the same manner as the bonding pad electrode. Since a metal such as Al or an Al alloy is a soft material, when a probe is contacted a plurality of times, for example, once in a memory test and once in a logic test, the probe pad electrode is displaced and comes to the tip of the probe. In some cases, metal scraps adhered and good contact was not obtained. Further, when the probe is used a plurality of times, the flatness of the distal end surface is deteriorated, and good contact may not be obtained even when the upper surface of the probe pad electrode is flat.

An object of the present invention is to provide a novel semiconductor device and a method of manufacturing the same, which can eliminate a contact failure between a probe and a probe pad electrode due to repeated use of an inspection probe.

[0005]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A first semiconductor device according to the present invention is a semiconductor device having a probe pad electrode connected to a bonding pad electrode, wherein the probe pad electrode has a higher hardness than the bonding pad electrode. It is characterized by being made of a material.

According to the first semiconductor device, since the probe pad electrode is made of a high-hardness conductive material such as W (tungsten) or TiN (titanium nitride), the inspection probe is brought into contact with the probe pad electrode a plurality of times. However, the probe pad electrode is hardly scratched, and good contact is obtained.

A second semiconductor device according to the present invention is a semiconductor device having a probe pad electrode connected to a bonding pad electrode, wherein an electrode hole is formed in one or more insulating films below the bonding pad electrode. The probe pad electrode is formed so as to cover the side wall of the electrode hole.

According to the second semiconductor device, since the probe pad electrode is formed to cover the side wall of the electrode hole provided in the insulating film, the tip of the inspection probe is easily locked to the probe pad electrode. And good contact is obtained.

In the second semiconductor device, when the electrode hole is formed so as to decrease in size in the depth direction, it becomes easy to insert the inspection probe into the electrode hole. Further, when the probe pad electrode is made of a conductive material having a higher hardness than the bonding pad electrode, damage to the probe pad electrode can be suppressed.

[0010]

FIG. 1 shows a semiconductor device according to a first embodiment of the present invention. FIG. 2 shows a pad electrode arrangement of the device shown in FIG. The cross section shown in FIG.
This corresponds to a cross section along the line PP ′ in FIG.

For example, a semiconductor substrate 10 made of silicon
Includes a plurality of IC chip areas. The surface of each IC chip area is covered with an insulating film 12. Insulating film 12
Is made of, for example, silicon oxide or the like, and is not limited to one layer, and may be formed of a plurality of insulating films. In some cases, a wiring layer may be formed between the plurality of insulating films.

On the insulating film 12, a wiring layer 14 is formed, and an interlayer insulating film 16 of silicon oxide or the like is formed so as to cover the wiring layer 14. In the insulating film 16, a connection hole 16a corresponding to a part of the wiring layer 14 is provided, and an electrode hole 16b is provided at a position slightly separated from the connection hole 16a. A probe pad electrode 18 made of, for example, W is provided in the electrode hole 16b. The W layer 18a is formed so as to cover the side wall of the connection hole 16a. However, the W layer 18a is additionally formed when the electrode 18 is formed, and may be omitted.

A bonding pad electrode 20 is provided on the insulating film 16 so as to be connected to the wiring layer 14 via the connection hole 16a. The electrode 20 is made of, for example, Al or A
1 alloy (Al-Si-Cu alloy or the like), and an Au wire or the like (not shown) is bonded. Electrode 20
Is partially extended on the insulating film 16 and connected to the electrode 18, and this extended portion constitutes a connection layer 20 </ b> A interconnecting the electrodes 18 and 20.

A protective insulating film 22 such as silicon nitride is formed on the insulating film 16 so as to cover the electrodes 18 and 20 and the connection layer 20A. The insulating film 22 exposes a central portion of the electrode 20. A bonding hole 22a and a probe contact hole 22b exposing the center of the electrode 18 are provided.

At the time of the wafer probing test, an inspection probe (not shown) is brought into contact with the electrode 18 through the probe contact hole 22b. Since the electrode 18 is made of W having a hardness higher than that of Al or an Al alloy constituting the electrode 20, the electrode 18 is hardly distorted even by a plurality of times of contact with the probe.

Next, a method of manufacturing the apparatus shown in FIG. 1 will be described with reference to FIGS. In the step of FIG. 3, after forming a wiring layer 14 on the insulating film 12 covering one main surface of the semiconductor substrate 10 by a known method, an insulating film 16 is formed on the insulating film 12 so as to cover the wiring layer 14. I do. The insulating film 16 can be formed using an applied insulating film so that the upper surface thereof has a flat shape.
After a connection hole 16a is formed in the insulating film 16 by well-known photolithography and selective dry etching, an electrode hole 16b is formed in the insulating film 16 by photolithography and selective dry etching again. As an example, the depth of the connection hole 16a is 0.8 μm,
The depth of 6b can be 0.2 μm. Also,
The connection hole 16a can be a square having a side length of 90 μm, and the electrode hole 16b can be a square having a side length of 30 μm.

Next, in the step of FIG.
Connection hole 1 is formed on insulating film 16 by D (chemical vapor deposition) method.
A W layer 18A is formed so as to cover 6a and the electrode hole 16b.
The thickness of the W layer 18A depends on the depth of the electrode hole 16b (for example, 0.
2 μm).

Next, in the step of FIG. 5, the probe pad electrode 18 is formed by filling the electrode hole 16b by etching back the W layer 18A until the upper surface of the insulating film 16 is exposed. At this time, the connection hole 1 larger than the electrode hole 16b is used.
The W layer 18a remains along the side wall of 6a.

Thereafter, Al or an Al alloy is deposited on the upper surface of the substrate, and the deposited layer is patterned by photolithography and selective dry etching to form a bonding pad electrode layer 20 and a connection layer as shown in FIGS. 20A is formed. Then, silicon nitride is deposited on the upper surface of the substrate by a plasma CVD method to form a protective insulating film 22.
Is formed, bonding holes 22a and probe contact holes 22b are formed in the insulating film 22 by photolithography and selective dry etching as shown in FIGS.

FIG. 6 shows a semiconductor device according to the second embodiment of the present invention. FIG. 7 shows a pad electrode arrangement of the device of FIG. The cross section shown in FIG.
Corresponds to the cross section along the -Q 'line.

Insulating film 1 covering one main surface of semiconductor substrate 10
2 is covered with a BP covering a polysilicon wiring (not shown).
Interlayer insulating film 2 such as SG (boron, phosphorus, silicate glass)
4 are formed. On the insulating film 24, a wiring layer 26
Is formed, and an electrode hole 24 a is provided in the insulating film 24 adjacent to the wiring layer 26. The W layer 28 is formed to cover the side wall of the electrode hole 24a.

On the insulating film 24, an interlayer insulating film 30 is formed so as to cover the wiring layer 26, and on the insulating film 30, a wiring layer 32 is formed. The wiring layer 32 has a wide area where the bonding pad electrode 40 is to be arranged in a square shape and has an extension extending from the area where the electrode 40 is to be arranged to the vicinity of the electrode hole 24a. 32
Used as A. The insulating layer 30 is provided with an electrode hole 30a adjacent to the connection layer 32A. Electrode hole 30a
Is formed so as to be continuously larger than the electrode hole 24a. As an example, if the connection hole 24a is a square having a side length A of 20 μm, the electrode hole 30a
Is formed on the connection layer 32A side with a size enlarged by D ₁ = 5 μm. W layer 34 is formed to cover the sidewalls of the electrode apertures 30a, W layer 34 covers the W layer 28 in the portion other than the enlarged portion of the D ₁ as described above. The connection layer 32 </ b> A interconnects the portion of the wiring layer 32 where the electrode 40 is to be arranged and the W layer 34.

On the insulating film 30, an interlayer insulating film 36 is formed to cover the wiring layer 32 and the connection layer 32A.
6, a connection hole 36a corresponding to a portion where the electrode 40 is to be arranged in the wiring layer 32 and an electrode hole 36b continuous with the electrode hole 30a are provided. The electrode hole 36b is formed in the connection layer 3
It is formed on the 2A side with a size enlarged by D ₂ = 5 μm. The electrode holes 36b, 30a, and 24a form continuous holes whose size decreases in the depth direction. W layer 38 is formed to cover the sidewalls of the electrode apertures 36b, W layer 38, _{D 2} mentioned above
Overlaps with (is connected to) the connection layer 32 </ _b > A at the enlarged portion, and covers the W layer 34 at portions other than the enlarged portion of D < _b > ₂ . The W layer 38a is formed in the connection hole 36a along with the formation of the W layer 38,
The W layer 38a may be omitted.

A bonding pad electrode 40 made of Al or an Al alloy is provided on the insulating film 36 so as to be connected to the wiring layer 32 through the connection hole 36a. On the insulating film 36, a protective insulating film 42 of silicon nitride or the like is formed so as to cover the electrode 40. The insulating film 42 has a bonding hole 42a that exposes the center of the electrode 40,
A probe contact hole 42b exposing a probe pad electrode composed of the layers 28, 34, and 38 is provided. As an example, the thickness of the insulating film 30 on the wiring layer 26 and the wiring layer 3
2, the thickness of the insulating film 36 is set to 0.8 μm,
The total thickness T of the insulating films 24, 30, and 36 can be set to 3 μm.

In the wafer probing test, the probe pad electrodes 28 and 3 are connected through the probe contact holes 42b.
The inspection probe PB is brought into contact with 4,38. In this case, the probe PB is locked by, for example, the W layer 34, so that good contact can be obtained even when the tip surface of the probe PB is deteriorated in flatness due to repeated use. Further, multipoint contact is also possible by bringing the probe PB into contact with the W layer 38 at the opening end of the electrode hole 36b. Further, the electrode holes 24a, 3
Since the continuous hole composed of Oa and 36b is formed so as to decrease in size in the depth direction, it becomes easy to insert the probe PB through the electrode hole 36b. In addition, the probe pad electrodes 28, 34, and 38 are connected to the bonding pad electrode 4
Since it is made of W having a hardness higher than that of Al or Al alloy constituting 0, damage of the probe pad electrode by the probe PB is reduced.

Next, a method for manufacturing the apparatus shown in FIG. 6 will be described with reference to FIGS. In the step of FIG. 8, after forming the insulating film 24 on the insulating film 12 covering one main surface of the semiconductor substrate 10, the wiring layer 26 is formed on the insulating film 24. And
An electrode hole 24a adjacent to the wiring layer 26 is formed in the insulating film 24 by photolithography and selective dry etching. Thereafter, a W layer 28A is formed on the upper surface of the substrate in the same manner as described with reference to FIG. 4, and the W layer 28A is etched back to cover the side wall of the electrode hole 24a and to be connected to the wiring layer 26. To form

Next, in the step of FIG. 9, an insulating film 30 is formed on the insulating film 24 so as to cover the wiring layer 26. Insulating film 30
Can be formed using a coating insulating film so that the upper surface is flat. Then, the wiring layer 3 is formed on the insulating film 30.
2 and the connection layer 32A, an electrode hole 30a adjacent to the connection layer 32A is formed by photolithography and selective dry etching. Electrode hole 30a is formed in a size enlarged than in succession electrode hole 24a only D ₁ of the foregoing. Thereafter, W is set in the same manner as described with reference to FIG.
The layer 34 is formed so as to cover the side wall of the electrode hole 30a and contact the connection layer 32A.

Next, in the step of FIG. 10, an insulating film 36 is formed on the insulating film 30 so as to cover the wiring layer 32 and the connection layer 32A. The insulating film 36 can be formed flat like the insulating film 30. The wiring layer 3 is formed on the insulating film 36 by photolithography and selective dry etching.
A connection hole 36a corresponding to a part of 2 and an electrode hole 36b continuous with the electrode hole 30a are formed. Electrode hole 36b is formed in a size enlarged from the electrode hole 30a by _{D 2} mentioned above. Thereafter, the W layer 38 is formed so as to cover the side wall of the electrode hole 36b in the same manner as described with reference to FIG. At this time, the W layer 3 extends along the side wall of the connection hole 36a larger than the electrode hole 36b.
8a remains.

Thereafter, Al or an Al alloy is deposited on the upper surface of the substrate, and the deposited layer is patterned by photolithography and selective dry etching to form a bonding pad electrode 40 as shown in FIGS. Then, after forming the protective insulating film 42 on the insulating film 36 in the same manner as described above with reference to FIGS. 1 and 2, by photolithography and selective dry etching processing, as shown in FIGS. A contact hole b is formed in the insulating film.

FIG. 11 shows a semiconductor device according to a third embodiment of the present invention. FIG. 12 shows a pad electrode arrangement of the device of FIG. The cross section shown in FIG.
This corresponds to a cross section along the line RR ′ in FIG. In FIG. 11, the semiconductor substrate 10, the insulating film 12, and the wiring layer 14 are
This is similar to that described above with reference to FIG.

On the insulating film 12, an insulating film 50 is formed to cover the wiring layer 14, and a connection hole 50 a corresponding to a part of the wiring layer 14 is formed in the insulating film 50. On the insulating film 50, a bonding pad electrode 52A is formed so as to be connected to the wiring layer 14 via the connection hole 50a. The electrode 52A is partially extended on the insulating film 50 in a pattern as shown in FIG. 12, and the square-shaped extended portion 52B is used as a resistance reduction layer constituting the probe pad electrode 55. An extension 52C between the reduction layer 52B is used as a connection layer.

Each of the bonding pad electrode 52A, the resistance reduction layer 52B and the connection layer 52C is made of an Al or Al alloy layer, and includes the electrode 52A and the layers 52B and 52C.
Are formed on the upper surfaces of TiN films 54A to 54A as antireflection films.
C is formed in a hatched pattern in FIG. That is, the TiN film 54A is formed so as to expose the central portion of the bonding pad electrode 52A and cover the peripheral portion of the electrode 52A.
Are formed so as to cover the resistance reduction layer 52B and the connection layer 52C, respectively. The TiN film 54B forms a probe pad electrode 55 together with the resistance reduction layer 52B.

On the insulating film 50, TiN films 54A to 54A-5
4C, a protective insulating film 56 made of silicon nitride or the like is formed. The insulating film 56 has a bonding hole 56a exposing the center of the electrode 52A and a probe pad electrode 55.
And a probe contact hole 56b exposing a central portion of the probe contact hole.

In the wafer probing test, an inspection probe (not shown) is brought into contact with the TiN film 54B via the probe contact hole 56b. Since the TiN film 54B is made of a material having a higher hardness than Al or an Al alloy constituting the electrode 52A, the TiN film 54B is hardly disturbed even by a plurality of times of probe contact, and a probe contact failure due to adhesion of metal scrap can be avoided.

Next, a method for manufacturing the apparatus shown in FIG. 11 will be described with reference to FIGS. In the step of FIG. 13, the semiconductor substrate 10 having the wiring layer 14 formed on one main surface via the insulating film 12 as described in FIG. 3 is prepared. Then, an insulating film 50 is formed on the insulating film 12 so as to cover the wiring layer 14. The insulating film 50 can be formed flat like the insulating film 16 of FIG.

After forming a connection hole 50a in the insulating film 50 by photolithography and selective dry etching, Al or an Al alloy and TiN are sequentially deposited on the upper surface of the substrate, and the deposited layer is subjected to photolithography and selective dry etching. By patterning by etching, a bonding pad electrode 52A, a resistance reduction layer 52B and a connection layer 52C, and TiN films 54A to 54C covering the electrode 52A and the layers 52B and 52C are formed. As an example, T
The thickness of the iN films 54A to 54C can be 40 nm. Thereafter, the insulating film 50 is formed in the same manner as described with reference to FIG.
A protective insulating film 56 covering the TiN films 54A to 54C.
To form

Next, in the step of FIG. 14, holes 58a corresponding to desired bonding holes are formed by photolithography.
Is formed on the insulating film 56.
Then, bonding holes 56a are formed in the insulating film 56 by selective dry etching using the resist layer 58 as a mask.
To form In the etching process at this time, the TiN film 54A is removed under the bonding hole 56a to expose the central portion of the bonding pad electrode 52A. After this,
The resist layer 58 is removed by ashing or the like.

Next, in the step of FIG. 15, holes 59a corresponding to desired probe contact holes are formed by photolithography.
Is formed on the upper surface of the substrate. Then, a probe contact hole 56b is formed in the insulating film 56 by selective dry etching using the resist layer 59 as a mask. In the etching process at this time, the TiN film 54
B is left without being etched. Thereafter, when the resist layer 59 is removed by ashing or the like, a semiconductor device as shown in FIG. 11 is obtained. The steps in FIG. 14 and the steps in FIG. 15 may be reversed.

FIG. 16 shows a semiconductor device according to the fourth embodiment of the present invention. FIG. 17 shows a pad electrode arrangement of the device of FIG. The cross section shown in FIG.
This corresponds to a cross section along the line SS ′ in FIG. In FIG. 16, the semiconductor substrate 10, the insulating film 12, and the wiring layer 14 are
This is similar to that described above with reference to FIG.

An insulating film 60 is formed on the insulating film 12 so as to cover the wiring layer 14, and a connection hole 60 a corresponding to a part of the wiring layer 14 is formed in the insulating film 60. On the insulating film 60, a lamination of the TiN film 62A and the bonding pad electrode 64A is formed so as to be connected to the wiring layer 14 via the connection hole 60a, and this lamination is formed in a pattern as shown in FIG. It is extended on the insulating film 60. In the square extension, the extension 64 of the electrode 64A is used.
B is provided with a square hole 64b so as to expose the TiN film 62B. The TiN film 62B is used as a probe pad electrode. An extension 64C between the electrode 64A and the probe pad electrode 62B has a T
Used as a connection layer together with the iN film 62C. The TiN film 62A is a diffusion preventing film for preventing diffusion of Al and the like. The extension 64B is a frame-like layer surrounding the hole 64b.

Bonding pad electrode 64A, frame-like layer 6
4B and the connection layer 64C are both made of an Al or Al alloy layer. On the upper surfaces of the electrode 64A and the layers 64B and 64C, a TiN film 66 as an antireflection film is formed in a hatched pattern in FIG. Have been.

On the insulating film 60, a protective insulating film 68 such as silicon nitride is formed so as to cover the TiN film 66.
The insulating film 68 is provided with a bonding hole 68a exposing a central portion of the bonding pad electrode 64A and a probe contact hole 68b exposing a central portion of the prog pad electrode 62B.

In the wafer probing test, an inspection probe (not shown) is brought into contact with the electrode 62B via the probe contact hole 68b. The electrode 62B is an electrode 64A
Is made of TiN having a hardness higher than that of Al or an Al alloy, so that the probe is hardly disturbed even in a plurality of times of contact with the probe, and a probe contact failure due to adhesion of metal scrap can be avoided.

Next, a method of manufacturing the apparatus shown in FIG. 16 will be described with reference to FIGS. In the step of FIG. 18, the semiconductor substrate 10 having the wiring layer 14 formed on one main surface via the insulating film 12 as described in FIG. 3 is prepared. Then, an insulating film 60 is formed on the insulating film 12 so as to cover the wiring layer 14. The insulating film 60 can be formed flat like the insulating film 16 of FIG.

After a connection hole 60a is formed in the insulating film 60 in the same manner as described with reference to FIG. 13, TiN, Al or Al alloy and TiN are sequentially deposited on the upper surface of the substrate, and the deposited layer is patterned to form a TiN film. 62A-62C, A
1 or Al alloy layers 64A to 64C and a TiN film 66 are formed. As an example, the thickness of the TiN films 62A to 62C is 100 nm, and the thickness of the TiN film 66 is 40 nm.
It can be. Thereafter, a protective insulating film 68 is formed to cover the TiN film 66 in the same manner as described with reference to FIG.

Next, in the step of FIG. 19, holes 70a corresponding to the desired bonding holes are formed in the same manner as described with reference to FIG.
Is formed on the insulating film 68, and a bonding hole 68a is formed in the insulating film 68 by selective dry etching using the resist layer 70 as a mask. In the etching process at this time, the TiN film 66 is removed under the bonding hole 68a to expose the central portion of the bonding pad electrode 64A. Thereafter, the resist layer 70 is removed by ashing or the like.

Next, in the step of FIG. 20, the holes 71b corresponding to the desired probe contact holes are formed in the same manner as described with reference to FIG.
Is formed on the upper surface of the substrate, and a probe contact hole 68b is formed in the insulating film 68 by selective dry etching using the resist layer 71 as a mask.
In the etching process at this time, the TiN film 66 and the Al or Al alloy layer 64B are removed in a pattern corresponding to the probe contact hole 68b, and a hole 64b exposing the probe pad electrode 62B is formed. Thereafter, when the resist layer 71 is removed by ashing or the like, a semiconductor device as shown in FIG. 16 is obtained. The order of the steps of FIG. 19 and FIG. 20 may be reversed.

The present invention is not limited to the above embodiments, but can be implemented in various modified forms. For example, the following changes are possible.

(1) The constituent material of the probe pad electrode is not limited to W, but may be a high melting point metal such as M 2 _O or Ti or W,
M _O, may be used silicides of refractory metals such as Ti.

(2) The anti-reflection film or the anti-diffusion film is not limited to the TiN film, but may be a TiON film, or a laminated film containing a TiN film and a TiON film as needed.

[0051]

As described above, according to the present invention, the probe pad electrode is made of a conductive material having a higher hardness than the bonding pad electrode, or the probe pad electrode is formed by covering the side wall of the electrode hole provided in the insulating film. As a result, even if the inspection probe is repeatedly used, an effect of ensuring good contact between the probe and the probe pad electrode can be obtained.

[Brief description of the drawings]

FIG. 1 is a substrate sectional view showing a semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a top view showing a pad electrode arrangement in the device of FIG.

FIG. 3 is a cross-sectional view of a substrate showing a step of forming connection holes in the method of manufacturing the apparatus of FIG.

FIG. 4 is a cross-sectional view of the substrate showing a W deposition step following the step of FIG. 3;

FIG. 5 is a cross-sectional view of the substrate showing a W etch-back step following the step of FIG. 4;

FIG. 6 is a substrate sectional view showing a semiconductor device according to a second embodiment of the present invention.

FIG. 7 is a top view showing a pad electrode arrangement in the device of FIG. 6;

FIG. 8 is a cross-sectional view of a substrate showing a first W layer forming step in the method of manufacturing the apparatus of FIG.

9 is a cross-sectional view of the substrate showing an insulating film forming step, a wiring forming step, a connection hole forming step, and a second W layer forming step following the step of FIG.

10 is a cross-sectional view of the substrate showing an insulating film forming step, a connection hole forming step, and a third W layer forming step following the step of FIG. 9;

FIG. 11 is a sectional view of a substrate showing a semiconductor device according to a third embodiment of the present invention.

FIG. 12 is a top view showing a pad electrode arrangement in the device of FIG. 11;

FIG. 13 is a cross-sectional view of a substrate illustrating a step of forming a protective insulating film in the method of manufacturing the apparatus of FIG.

FIG. 14 is a cross-sectional view of the substrate showing a bonding hole forming step following the step of FIG. 13;

FIG. 15 is a cross-sectional view of a substrate showing a probe contact hole forming step following the step of FIG. 14;

FIG. 16 is a substrate sectional view showing a semiconductor device according to a fourth embodiment of the present invention.

FIG. 17 is a top view showing a pad electrode arrangement in the device of FIG.

18 is a cross-sectional view of a substrate illustrating a step of forming a protective insulating film in the method for manufacturing the apparatus of FIG.

FIG. 19 is a cross-sectional view of the substrate showing a bonding hole forming step following the step of FIG. 18;

FIG. 20 is a cross-sectional view of the substrate showing a probe contact hole forming step following the step of FIG. 19;

[Explanation of symbols]

10: semiconductor substrate, 12, 16, 22, 24, 30, 3
6, 42, 50, 56, 60, 68: insulating film, 14, 2
6, 32: wiring layer, 18, 28, 34, 38, 55, 6
2B: probe pad electrode, 20, 40, 52A, 64
A: bonding pad electrode, 20A, 32A, 52
C, 64C: connection layer, 22a, 42a, 56a, 68
a: bonding hole, 22b, 42b, 56b, 68
b: Probe contact hole, 54A to 54C, 62A, 62
C, 66: TiN film.

[Procedure amendment]

[Submission Date] January 26, 2000 (2000.1.2
6)

[Procedure amendment 1]

[Document name to be amended] Statement

[Correction target item name] 0005

[Correction method] Change

[Correction contents]

[0005]

A first semiconductor device according to the present invention is a semiconductor device having a probe pad electrode connected to a bonding pad electrode, wherein the probe pad electrode has a higher hardness than the bonding pad electrode. Characterized by the following:

[Procedure amendment 2]

[Document name to be amended] Statement

[Correction target item name] Brief description of drawings

[Correction method] Change

[Correction contents]

[Brief description of the drawings]

FIG. 1 is a substrate sectional view showing a semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a top view showing a pad electrode arrangement in the device of FIG.

FIG. 3 is a cross-sectional view of a substrate showing a step of forming connection holes in the method of manufacturing the apparatus of FIG.

FIG. 4 is a cross-sectional view of the substrate showing a W deposition step following the step of FIG.

FIG. 5 is a cross-sectional view of the substrate showing a W etch-back step following the step of FIG. 4;

FIG. 6 is a substrate sectional view showing a semiconductor device according to a second embodiment of the present invention.

FIG. 7 is a top view showing a pad electrode arrangement in the device of FIG. 6;

FIG. 8 is a cross-sectional view of a substrate showing a first W layer forming step in the method of manufacturing the apparatus of FIG.

9 is a cross-sectional view of the substrate showing an insulating film forming step, a wiring forming step, a connection hole forming step, and a second W layer forming step following the step of FIG.

10 is a cross-sectional view of the substrate showing an insulating film forming step, a connection hole forming step, and a third W layer forming step following the step of FIG. 9;

FIG. 11 is a sectional view of a substrate showing a semiconductor device according to a third embodiment of the present invention.

FIG. 12 is a top view showing a pad electrode arrangement in the device of FIG. 11;

FIG. 13 is a cross-sectional view of a substrate illustrating a step of forming a protective insulating film in the method of manufacturing the apparatus of FIG.

FIG. 14 is a cross-sectional view of the substrate showing a bonding hole forming step following the step of FIG. 13;

FIG. 15 is a cross-sectional view of a substrate showing a probe contact hole forming step following the step of FIG. 14;

FIG. 16 is a substrate sectional view showing a semiconductor device according to a fourth embodiment of the present invention.

FIG. 17 is a top view showing a pad electrode arrangement in the device of FIG.

18 is a cross-sectional view of a substrate illustrating a step of forming a protective insulating film in the method for manufacturing the apparatus of FIG.

FIG. 19 is a cross-sectional view of the substrate showing a bonding hole forming step following the step of FIG. 18;

FIG. 20 is a cross-sectional view of the substrate showing a probe contact hole forming step following the step of FIG. 19;

[Description of Signs] 10: Semiconductor substrate, 12, 16, 22, 24, 30, 3
6, 42, 50, 56, 60, 68: insulating film, 14, 2
6, 32: wiring layer, 18, 28, 34, 38, 55, 6
2B: probe pad electrode, 20, 40, 52A, 64
A: bonding pad electrode, 20A, 32A, 52
C, 64C: connection layer, 22a, 42a, 56a, 68
a: bonding hole, 22b, 42b, 56b, 68
b: Probe contact hole, 54A to 54C, 62A, 62
C, 66: TiN film.

Claims (12)

[Claims] 1. A semiconductor device having a probe pad electrode connected to a bonding pad electrode, wherein the probe pad electrode is made of a conductive material having a higher hardness than the bonding pad electrode. 2. A semiconductor substrate; a first insulating film formed over one main surface of the semiconductor substrate; a wiring layer formed on the first insulating film; A second insulating film formed on the film so as to cover the wiring layer, the second insulating film having a connection hole corresponding to a part of the wiring layer and an electrode hole separated from the connection hole; A probe pad electrode provided in the hole, and a bonding pad electrode formed on the second insulating film so as to be connected to the probe pad electrode and connected to the wiring layer via the connection hole. With
A semiconductor device in which the probe pad electrode is made of a conductive material having a higher hardness than the bonding pad electrode. 3. After depositing the conductive material on the second insulating film so as to cover the electrode hole, the deposited layer is etched back so that a part of the deposited layer is placed in the electrode hole. 3. The method according to claim 2, wherein the semiconductor device is left as a probe pad electrode. 4. A semiconductor device having a probe pad electrode connected to a bonding pad electrode, wherein an electrode hole is provided in one or more insulating films below the bonding pad electrode and a side wall of the electrode hole is covered. A semiconductor device, wherein the probe pad electrode is formed by using the same. 5. The semiconductor device according to claim 4, wherein said electrode hole is formed so as to decrease in size in a depth direction. 6. The semiconductor device according to claim 4, wherein said probe pad electrode is made of a conductive material having a higher hardness than said bonding pad electrode. 7. A semiconductor substrate, a first insulating film formed covering one main surface of the semiconductor substrate, and a wiring laminate formed on the first insulating film,
One or more wiring layers and an insulating layer laid under each wiring layer, each insulating layer is provided with an electrode hole adjacent to a wiring layer thereabove, and a plurality of insulating layers are present. In this case, the electrode holes of the plurality of insulating layers are formed so as to be continuous holes whose size decreases in the depth direction, and the uppermost wiring layer is formed on the uppermost insulating layer in this wiring lamination. A second insulating film formed so as to cover the uppermost wiring layer, the connection hole corresponding to a part of the uppermost wiring layer, and an electrode hole separated from the connection hole. And formed so as to have a larger size than the electrode holes of the insulating layer, and cover the side walls of the electrode holes of the respective insulating layers and the side walls of the electrode holes of the second insulating film, and A probe pad electrode formed to be connected to each wiring layer; A semiconductor device and a bonding pad electrode formed on the second insulating film to be connected to the layer. 8. Each time the wiring layers are formed, a predetermined conductive material is deposited on the insulating layer below the wiring layers so as to cover the electrode holes adjacent to the wiring layers, and the deposited layers are etched. By backing, a part of the deposited layer is left in the electrode hole, a predetermined conductive material is deposited on the second insulating film so as to cover the electrode hole, and the deposited layer is etched back. A part of the deposition layer is left in the electrode hole by the probe, and the deposition layer remaining in the electrode hole adjacent to each wiring layer and the deposition remaining in the electrode hole of the second insulating film are separated by the probe. 8. The method for manufacturing a semiconductor device according to claim 7, wherein the semiconductor device is a pad electrode. 9. A semiconductor substrate; a first insulating film formed over one main surface of the semiconductor substrate; a wiring layer formed on the first insulating film; A second insulating film formed on the film to cover the wiring layer, the second insulating film having a connection hole corresponding to a part of the wiring layer; and a second insulating film connected to the wiring layer via the connection hole. A bonding pad electrode formed on the second insulating film as described above, an extension of the bonding pad electrode extending on the second insulating film, and a conductive layer superposed on the extension. A probe pad electrode comprising a material layer, wherein the conductive material layer is made of a conductive material having a higher hardness than the bonding pad electrode. 10. A step of forming a wiring layer on a first insulating film covering one main surface of a semiconductor substrate; and forming a second insulating film on the first insulating film so as to cover the wiring layer. Forming; forming a connection hole corresponding to a part of the wiring layer in the second insulating film; and forming first and second connection holes on the second insulation film so as to cover the connection hole. A step of sequentially depositing conductive material layers, wherein the first
The second conductive material layer is formed of a conductive material having a higher hardness than the first conductive material layer, and the first and second conductive material layers are formed of a conductive material for forming a bonding pad electrode. Forming a bonding pad electrode and a probe pad electrode each comprising a remaining portion of the first and second conductive material layers by patterning a laminate of the second conductive material layer, wherein the bonding pad electrode is The probe pad electrode is connected to the wiring layer through a connection hole, and the probe pad electrode is connected to the bonding pad electrode. The probe pad electrode covers the bonding pad electrode and the probe pad electrode on the second insulating film. Forming a third insulating film; and forming a bonding hole exposing a central portion of the bonding pad electrode in the third insulating film by a selective etching process. In the selective etching process, the second conductive material layer of the first and second conductive material layers forming the bonding pad electrode is removed in a pattern corresponding to the bonding hole, and the first conductive material layer is removed. Forming a probe contact hole exposing a central portion of the probe pad electrode in the third insulating film by selective etching before or after forming the bonding hole. A selective etching process for forming the probe contact hole, wherein the first and second conductive material layers constituting the probe pad electrode remain. 11. A semiconductor substrate; a first insulating film formed over one main surface of the semiconductor substrate; a wiring layer formed on the first insulating film; A second insulating film formed on the film to cover the wiring layer, the second insulating film having a connection hole corresponding to a part of the wiring layer; and a second insulating film connected to the wiring layer through the connection hole. A bonding pad electrode formed on the second insulating film so as to be connected to the bonding pad electrode, and having a higher hardness than the bonding pad electrode. And a probe pad electrode made of a conductive material. 12. A step of forming a wiring layer on a first insulating film covering one main surface of a semiconductor substrate; and forming a second insulating film on the first insulating film so as to cover the wiring layer. Forming; forming a connection hole corresponding to a part of the wiring layer in the second insulating film; and forming first and second connection holes on the second insulation film so as to cover the connection hole. A step of sequentially depositing conductive material layers, wherein the second
The first conductive material layer is made of a conductive material having a higher hardness than the second conductive material layer, and the first and second conductive material layers are made of a conductive material for forming a bonding pad electrode. Forming a bonding pad electrode and a probe pad electrode each comprising a remaining portion of the first and second conductive material layers by patterning a laminate of the second conductive material layer, wherein the bonding pad electrode is The probe pad electrode is connected to the wiring layer through a connection hole, and the probe pad electrode is connected to the bonding pad electrode. The probe pad electrode covers the bonding pad electrode and the probe pad electrode on the second insulating film. Forming a third insulating film; and forming a bonding hole exposing a central portion of the bonding pad electrode in the third insulating film by a selective etching process. In the selective etching process, the first and second conductive material layers constituting the bonding pad electrode are left, and the bonding hole is formed before or after the bonding hole is formed. Forming a probe contact hole exposing a central portion of the probe pad electrode in the third insulating film by a selective etching process. In the selective etching process for forming the probe contact hole, the probe pad electrode is A method for manufacturing a semiconductor device, comprising: removing a second conductive material layer of the first and second conductive material layers to be formed in a pattern corresponding to the probe contact hole and leaving the first conductive material layer. .