JP2016167619A - Electronic component - Google Patents

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JP2016167619A
JP2016167619A JP2016087995A JP2016087995A JP2016167619A JP 2016167619 A JP2016167619 A JP 2016167619A JP 2016087995 A JP2016087995 A JP 2016087995A JP 2016087995 A JP2016087995 A JP 2016087995A JP 2016167619 A JP2016167619 A JP 2016167619A
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electrode
electronic component
mounting
layer
measurement
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JP6233445B2 (en
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奏子 深堀
Kanako Fukabori
奏子 深堀
雅信 野村
Masanobu Nomura
雅信 野村
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Murata Manufacturing Co Ltd
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Abstract

PROBLEM TO BE SOLVED: To provide an electronic component in which measurement failures due to a deterioration in contact between a probe and a measuring electrode hardly occur.SOLUTION: An electronic component 100 includes: an electronic component element assembly 10; a plurality of mounting electrodes 13 provided on the surface of the electronic component element assembly 10; and a measuring electrode 16 provided on the surface of the electronic component element assembly 10 and electrically connected to at least one of the plurality of mounting electrodes 13. The plurality of mounting electrodes and the measuring electrode are formed on a portion formed on an organic protective film with the same height, of an extraction electrode 9 continuously formed of the same material, respectively. An upper layer harder than the surfaces of the mounting electrodes is provided on the surface of the measuring electrode.SELECTED DRAWING: Figure 3

Description

本発明は、測定用電極を備えた電子部品に関するものである。   The present invention relates to an electronic component including a measurement electrode.

従来から、例えば特許文献１（特許第４６７４６０６号公報）に開示されるような、実装用電極を備えた電子部品が使用されている。   Conventionally, for example, an electronic component having a mounting electrode as disclosed in Patent Document 1 (Japanese Patent No. 4673606) has been used.

図４に、従来の実装用電極を備えた電子部品の一例を示す。
図４に示す電子部品２００は、熱酸化膜１０２を表面に有する基板１０１上に、密着層１０３を介して電子部品素体１１０が形成されている。 FIG. 4 shows an example of an electronic component provided with a conventional mounting electrode.
In an electronic component 200 shown in FIG. 4, an electronic component element body 110 is formed on a substrate 101 having a thermal oxide film 102 on a surface through an adhesion layer 103.

電子部品素体１１０は、複数の内部電極層１０４と誘電体層１０５とが交互に積層されてなるキャパシタ部１０６と、キャパシタ部１０６を覆う無機保護膜１０７および有機保護膜１０８と、キャパシタ部１０６の内部電極層１０４に接続された引き出し電極１０９を備えてなる。   The electronic component body 110 includes a capacitor unit 106 in which a plurality of internal electrode layers 104 and dielectric layers 105 are alternately stacked, an inorganic protective film 107 and an organic protective film 108 that cover the capacitor unit 106, and a capacitor unit 106. The lead electrode 109 connected to the internal electrode layer 104 is provided.

電子部品素体１１０の引き出し電極１０９上には、実装用電極１１３が形成されている。実装用電極１１３は、Ｎｉからなる第１の電極層１１１と、Ａｕからなる第２の電極層１１２とが積層されたものからなる。   A mounting electrode 113 is formed on the extraction electrode 109 of the electronic component body 110. The mounting electrode 113 is formed by laminating a first electrode layer 111 made of Ni and a second electrode layer 112 made of Au.

電子部品素体１１０上には有機保護膜１１７が形成されている。
かかる構造からなる電子部品２００を製品として出荷する前に、良品と不良品の選別が行われる。電子部品２００の選別は一般的に、プローブを実装用電極１１３の表面に当てて電気容量等の特性を測定することにより実施される。 An organic protective film 117 is formed on the electronic component body 110.
Before the electronic component 200 having such a structure is shipped as a product, a non-defective product and a defective product are selected. In general, the electronic component 200 is selected by measuring a characteristic such as capacitance by placing a probe on the surface of the mounting electrode 113.

特許第４６７４６０６号公報Japanese Patent No. 4675606

しかしながら、上述した従来の電子部品２００には、実装用電極１１３の表面が柔らかいＡｕからなる第２の電極層１１２であるため、プローブを当てた際に実装用電極１１３の表面が剥離しやすいという問題があった。そして、剥離したＡｕの断片がプローブの先端に付着することで、プローブと実装用電極１１３の電気的接触が悪化し、測定不良が発生してしまう場合があるという問題があった。   However, in the above-described conventional electronic component 200, since the surface of the mounting electrode 113 is the second electrode layer 112 made of soft Au, the surface of the mounting electrode 113 is easily peeled off when the probe is applied. There was a problem. Then, since the peeled Au fragment adheres to the tip of the probe, the electrical contact between the probe and the mounting electrode 113 deteriorates, and there is a problem that measurement failure may occur.

そこで、本発明の目的は、測定不良が発生しにくい電子部品を提供することである。   Accordingly, an object of the present invention is to provide an electronic component in which measurement failure is unlikely to occur.

上記の目的を達成するため、本発明の電子部品は、電子部品素体と、電子部品素体の表面上に設けられた複数の実装用電極と、電子部品素体の表面上に設けられ、複数の実装用電極の少なくとも１つと電気的に接続された測定用電極とを備え、測定用電極の表面が実装用電極の表面より硬いことを特徴とする。   To achieve the above object, an electronic component of the present invention is provided on an electronic component element body, a plurality of mounting electrodes provided on the surface of the electronic component element body, and the surface of the electronic component element body, And a measuring electrode electrically connected to at least one of the plurality of mounting electrodes, wherein the surface of the measuring electrode is harder than the surface of the mounting electrode.

本発明の電子部品は、実装用電極よりも表面が硬い、プローブを当てて選別するための測定用電極を備えており、プローブと測定用電極の電気的接触の悪化に伴う測定不良が発生しにくくなっている。   The electronic component of the present invention has a measurement electrode that has a harder surface than the mounting electrode and is applied with a probe for selection, resulting in measurement failure due to deterioration of electrical contact between the probe and the measurement electrode. It has become difficult.

図１は、本発明の実施形態にかかる電子部品１００の平面図である。FIG. 1 is a plan view of an electronic component 100 according to an embodiment of the present invention. 図２（ａ）〜（ｄ）はそれぞれ、本発明の実施形態にかかる電子部品１００の製造方法において適用した各工程を示す断面図である。2A to 2D are cross-sectional views showing respective steps applied in the method for manufacturing the electronic component 100 according to the embodiment of the present invention. 図３（ｅ）〜（ｇ）はそれぞれ、図２（ａ）〜（ｄ）の続きであり、本発明の実施形態にかかる電子部品１００の製造方法において適用した各工程を示す断面図である。なお、図３（ｇ）は、電子部品１００の完成図でもある。FIGS. 3E to 3G are continuations of FIGS. 2A to 2D, respectively, and are cross-sectional views showing respective steps applied in the method for manufacturing the electronic component 100 according to the embodiment of the present invention. . FIG. 3G is also a completed drawing of the electronic component 100. 図４は、従来の電子部品２００の断面図である。FIG. 4 is a cross-sectional view of a conventional electronic component 200.

以下において、図面とともに、本発明を実施するための形態の一例について説明する。
図１に、本発明の実施形態にかかる電子部品１００の平面図を示す。また、図３（ｇ）に、図１の電子部品１００におけるＡ−Ａ線での断面図を示す。 Below, an example of the form for carrying out the present invention is explained with a drawing.
FIG. 1 shows a plan view of an electronic component 100 according to an embodiment of the present invention. FIG. 3G is a cross-sectional view taken along line AA in the electronic component 100 of FIG.

電子部品１００は、ＳｉＯ2からなるＳｉ熱酸化膜２を表面に有するＳｉの基板１を備えている。   The electronic component 100 includes a Si substrate 1 having a Si thermal oxide film 2 made of SiO2 on its surface.

基板１上に、Ｂａ0.7Ｓｒ0.3ＴｉＯ3（ＢＳＴ）からなる密着層３を介して、電子部品素体１０が形成されている。電子部品素体１０は、Ｐｔからなる複数の内部電極層４およびＢＳＴからなる複数の誘電体層５が交互に積層されてなるキャパシタ部６を有している。キャパシタ部６上には、酸化シリコン（ＳｉＯx）からなる無機保護膜７、および、ポリイミド樹脂からなる有機保護膜８が形成されている。キャパシタ部６の内部電極層５上には、Ｔｉ薄膜、Ｃｕ薄膜、Ｔｉ薄膜の順番に積層されてなる引き出し電極９が形成されている。ただし、図３（ｇ）においては、各薄膜を区別して示してはいない。   An electronic component body 10 is formed on the substrate 1 via an adhesion layer 3 made of Ba0.7Sr0.3TiO3 (BST). The electronic component body 10 has a capacitor unit 6 in which a plurality of internal electrode layers 4 made of Pt and a plurality of dielectric layers 5 made of BST are alternately stacked. On the capacitor portion 6, an inorganic protective film 7 made of silicon oxide (SiOx) and an organic protective film 8 made of polyimide resin are formed. On the internal electrode layer 5 of the capacitor unit 6, an extraction electrode 9 is formed by laminating a Ti thin film, a Cu thin film, and a Ti thin film in this order. However, in FIG. 3G, the thin films are not shown separately.

電子部品素体１０の引き出し電極９上には、実装用電極１３と測定用電極１６とが形成されている。実装用電極１３は、Ｎｉからなる第１の電極層１１と、Ａｕからなる第２の電極層１２とが積層された構造からなる。測定用電極１６は、実装用電極１３と同様にＮｉからなる第１の電極層とＡｕからなる第２の電極層が積層されてなる下層部１４と、Ａｕからなる第２の電極層１２より硬いＴｉからなる上層部１５とが積層された構造からなる。なお、Ｔｉの表面は空気中で酸化されやすいため、表面がＴｉの自然酸化膜となっていることがある。このほか上層部１５の材料として、Ｃｏ、Ｃｒ、Ｃｕ、Ｍｏ、Ｎｂ、Ｐｄ、Ｐｔ、Ｔａ、Ｗ、Ｚｎ等が挙げられる。その中で特にＣｒ、Ｃｕ、Ｐｔ、Ｚｎが望ましい。   On the lead electrode 9 of the electronic component body 10, a mounting electrode 13 and a measurement electrode 16 are formed. The mounting electrode 13 has a structure in which a first electrode layer 11 made of Ni and a second electrode layer 12 made of Au are laminated. Similar to the mounting electrode 13, the measurement electrode 16 includes a lower layer portion 14 in which a first electrode layer made of Ni and a second electrode layer made of Au are stacked, and a second electrode layer 12 made of Au. It has a structure in which an upper layer portion 15 made of hard Ti is laminated. Since the surface of Ti is easily oxidized in the air, the surface may be a natural oxide film of Ti. In addition, examples of the material of the upper layer portion 15 include Co, Cr, Cu, Mo, Nb, Pd, Pt, Ta, W, and Zn. Of these, Cr, Cu, Pt, and Zn are particularly desirable.

実装用電極１３と測定用電極１６の表面を除いて、電子部品素体１０を覆うように、有機保護膜１７が形成されている。   An organic protective film 17 is formed so as to cover the electronic component body 10 except for the surfaces of the mounting electrode 13 and the measuring electrode 16.

以上に示した構成からなる電子部品１００の選別は、従来のように実装用電極１３の表面にプローブを当てて特性を測定するのではなく、測定用電極１６の表面にプローブを当てて特性を測定することにより実施する。   The selection of the electronic component 100 having the above-described configuration is not performed by measuring a characteristic by applying a probe to the surface of the mounting electrode 13 as in the prior art, but by applying a probe to the surface of the measuring electrode 16 to obtain the characteristic. Implement by measuring.

本発明の電子部品１００においては、測定用電極１６の表面（上層部１５）がＴｉまたはＴｉの自然酸化膜からなっている。ＴｉまたはＴｉの自然酸化膜からなる測定用電極１６の表面は、Ａｕからなる実装用電極１３の表面（第２の電極層１２）よりも硬いため、この測定用電極１６の表面はプローブを当てた際に剥離することがほとんどない。そのため、プローブと測定用電極１６の電気的接触の悪化に伴う測定不良が発生しにくくなって
いる。 In the electronic component 100 of the present invention, the surface (upper layer portion 15) of the measurement electrode 16 is made of Ti or a natural oxide film of Ti. Since the surface of the measurement electrode 16 made of Ti or a natural oxide film of Ti is harder than the surface of the mounting electrode 13 made of Au (second electrode layer 12), the surface of the measurement electrode 16 is contacted with a probe. Hardly peels off. For this reason, it is difficult for a measurement failure due to the deterioration of the electrical contact between the probe and the measurement electrode 16 to occur.

以上の構成からなる本発明の実施形態にかかる電子部品１００は例えば、次の方法により製造することができる。   The electronic component 100 having the above configuration according to the embodiment of the present invention can be manufactured by, for example, the following method.

図２（ａ）〜図３（ｇ）は、本発明の実施形態にかかる電子部品１００の製造方法において適応する各工程の断面図を示している。   FIG. 2A to FIG. 3G are cross-sectional views showing respective steps applied in the method for manufacturing the electronic component 100 according to the embodiment of the present invention.

まず、図２（ａ）に示すように、ＳｉＯ2からなるＳｉ熱酸化膜２が表面に形成されたＳｉの基板１上に、化学溶液堆積(ＣＳＤ：Chemical Solution Deposition)法により、膜厚５０ｎｍのＢＳＴからなる密着層３を形成する。具体的には、ＢＳＴの原料溶液を熱酸化膜２上に塗布し、３５０℃のホットプレート上で乾燥させ、６３０℃、１０分間の熱処理により結晶化させて、密着層３を得る。   First, as shown in FIG. 2 (a), a 50 nm-thickness film is formed on a Si substrate 1 having a Si thermal oxide film 2 made of SiO2 formed thereon by a chemical solution deposition (CSD) method. An adhesion layer 3 made of BST is formed. Specifically, a BST raw material solution is applied onto the thermal oxide film 2, dried on a hot plate at 350 ° C., and crystallized by heat treatment at 630 ° C. for 10 minutes to obtain the adhesion layer 3.

次に、密着層３上に、高周波マグネトロンスパッタ法により膜厚２００ｎｍのＰｔからなる内部電極層４を形成する。   Next, an internal electrode layer 4 made of Pt having a thickness of 200 nm is formed on the adhesion layer 3 by high frequency magnetron sputtering.

次に、内部電極層４上に、上述した密着層３の形成工程と同様のＣＳＤ法により、膜厚９０ｎｍのＢＳＴからなる誘電体層５を形成する。   Next, a dielectric layer 5 made of BST having a thickness of 90 nm is formed on the internal electrode layer 4 by the CSD method similar to the step of forming the adhesion layer 3 described above.

次に、誘電体層５上に、高周波マグネトロンスパッタ法により、膜厚２００ｎｍのＰｔからなる内部電極層４を形成する。   Next, the internal electrode layer 4 made of Pt having a thickness of 200 nm is formed on the dielectric layer 5 by high frequency magnetron sputtering.

上記した方法と同様のＣＳＤ法および高周波マグネトロンスパッタ法を交互に繰り返すことにより、合計４層の内部電極層４および、合計３層の誘電体層３を作成する。   A total of four internal electrode layers 4 and a total of three dielectric layers 3 are formed by alternately repeating the CSD method and the high-frequency magnetron sputtering method similar to those described above.

次に、最上面の内部電極層４上にフォトリソグラフィ法によってレジストマスク（図示せず）を形成した後、Ａｒを用いたイオンミリング法により内部電極層４と誘電体層５をエッチングすることで、図２（ｂ）に示すようにキャパシタ部６を形成する。その後、内部電極層４上からレジストマスクを取り除く。   Next, after a resist mask (not shown) is formed on the uppermost internal electrode layer 4 by photolithography, the internal electrode layer 4 and the dielectric layer 5 are etched by ion milling using Ar. As shown in FIG. 2B, the capacitor portion 6 is formed. Thereafter, the resist mask is removed from the internal electrode layer 4.

次に、キャパシタ部６を含む全体をピーク温度８６０℃で３０分間熱処理をする。
次に、図２（ｃ）に示すように、プラズマ化学蒸着（ＰＥＣＶＤ：Plasma Enhanced Chemical Vapor Deposition）法により、キャパシタ部６の上面および側面を覆うように、膜厚７００ｎｍの酸化シリコンからなる無機保護膜７を形成する。 Next, the entire capacitor unit 6 is heat-treated at a peak temperature of 860 ° C. for 30 minutes.
Next, as shown in FIG. 2C, an inorganic protection made of silicon oxide having a thickness of 700 nm so as to cover the upper surface and side surfaces of the capacitor portion 6 by plasma enhanced chemical vapor deposition (PECVD). A film 7 is formed.

次に、無機保護膜７上に、膜厚６μｍのポリイミド樹脂からなる有機保護膜８を形成する。具体的には、無機保護膜７上に感光性のポリイミド樹脂をスピンコートで塗布し、１２０℃で５分間加熱し、露光、現像工程を経て３２０℃で３０分加熱を行い、パターニングされた有機保護膜８を得る。   Next, an organic protective film 8 made of a polyimide resin having a film thickness of 6 μm is formed on the inorganic protective film 7. Specifically, a photosensitive polyimide resin is applied onto the inorganic protective film 7 by spin coating, heated at 120 ° C. for 5 minutes, exposed to light and developed for 30 minutes at 320 ° C., and patterned organically. A protective film 8 is obtained.

次に、図２（ｄ）に示すように、有機保護膜８をマスクとして、ＣＨＦ3ガスを用いて無機保護膜７をドライエッチングし、内部電極層４の一部を露出させる。   Next, as shown in FIG. 2D, the inorganic protective film 7 is dry-etched using CHF3 gas using the organic protective film 8 as a mask to expose a part of the internal electrode layer 4.

次に、図３（ｅ）に示すように、内部電極層４に接続された引き出し電極９を形成する。具体的には、高周波マグネトロンスパッタ法により、膜厚１００ｎｍのＴｉ、膜厚１０００ｎｍのＣｕ、膜厚１００ｎｍのＴｉを順次成膜することにより、引き出し電極９を形成する。   Next, as shown in FIG. 3E, the extraction electrode 9 connected to the internal electrode layer 4 is formed. Specifically, the extraction electrode 9 is formed by sequentially depositing 100 nm thick Ti, 1000 nm thick Cu, and 100 nm thick Ti by high-frequency magnetron sputtering.

次に、引き出し電極９上の一部に、フォトリソグラフィ法によってレジストマスク（図示せず）を形成する。その後、表面がレジストマスクから露出した引き出し電極９上に、電解めっきによって膜厚４．０μｍのＮｉからなる第１の電極層１１および、膜厚０．１μｍのＡｕからなる第２の電極層１２を堆積することにより、実装用電極１３および測定用電極１６の下層部１４を形成する。その後、引き出し電極９上からレジストマスクを取り除く。   Next, a resist mask (not shown) is formed on a part of the extraction electrode 9 by photolithography. Thereafter, a first electrode layer 11 made of Ni having a thickness of 4.0 μm and a second electrode layer 12 made of Au having a thickness of 0.1 μm are formed on the extraction electrode 9 whose surface is exposed from the resist mask by electrolytic plating. Is deposited to form the lower layer portion 14 of the mounting electrode 13 and the measurement electrode 16. Thereafter, the resist mask is removed from the extraction electrode 9.

次に、フォトリソグラフィ法によって下層部１４の表面のみを露出させたレジストマスク（図示せず）を形成する。その後、図３（ｆ）に示すように、Ｔｉを下層部１４上に蒸着することにより上層部１５を形成することで測定用電極１６を完成させる。その後、レジストマスクを除去する。   Next, a resist mask (not shown) in which only the surface of the lower layer part 14 is exposed is formed by photolithography. Thereafter, as shown in FIG. 3 (f), Ti is deposited on the lower layer portion 14 to form the upper layer portion 15, thereby completing the measurement electrode 16. Thereafter, the resist mask is removed.

次に、引き出し電極９上にフォトリソグラフィ法によってレジストマスク（図示せず）を形成し、ウェットエッチング法により引き出し電極９の一部をエッチングした後、レジストマスクを引き出し電極９上から除去する。   Next, a resist mask (not shown) is formed on the extraction electrode 9 by photolithography, a part of the extraction electrode 9 is etched by wet etching, and then the resist mask is removed from the extraction electrode 9.

最後に、図３（ｇ）に示すように、膜厚８μｍのエポキシ樹脂からなる有機保護膜１７を実装用電極１３および測定用電極１６の表面が露出するように形成し、電子部品１００を完成させる。具体的には、感光性のエポキシ樹脂原料をスピンコートで塗布し、１１０℃で５分間加熱し、露光、現像工程を経て２００℃で１時間硬化を行い、有機保護膜１７を形成する。   Finally, as shown in FIG. 3G, an organic protective film 17 made of an epoxy resin with a film thickness of 8 μm is formed so that the surfaces of the mounting electrode 13 and the measuring electrode 16 are exposed, and the electronic component 100 is completed. Let Specifically, a photosensitive epoxy resin raw material is applied by spin coating, heated at 110 ° C. for 5 minutes, and subjected to exposure and development steps, followed by curing at 200 ° C. for 1 hour to form the organic protective film 17.

本実施形態にかかる電子部品１００の製造方法によれば、図３（ｅ）に示すように、測定用電極１６の下層部１４は、実装用電極１３と同時に形成することができる。そのため、図３（ｆ）に示すように、従来の製造方法に上層部１５の形成工程を追加することのみで、測定用電極１６を形成することが可能となっている。   According to the method for manufacturing the electronic component 100 according to the present embodiment, the lower layer portion 14 of the measurement electrode 16 can be formed simultaneously with the mounting electrode 13 as shown in FIG. Therefore, as shown in FIG. 3 (f), the measurement electrode 16 can be formed only by adding the step of forming the upper layer portion 15 to the conventional manufacturing method.

なお、本発明の実施形態にかかる電子部品１００の構造、および製造方法は、上述した内容に限定されることはなく、発明の趣旨に沿って、種々の変更をなすことができる。   The structure and manufacturing method of the electronic component 100 according to the embodiment of the present invention are not limited to the above-described contents, and various changes can be made in accordance with the spirit of the invention.

例えば、前記実施形態では、実装用電極１３は第１の電極層１１および第２の電極層１２の合計２層からなっているが、合計１層でも合計３層以上でも良い。また、測定用電極１６の下層部１４は、第１の電極層１１および第２の電極層１２の計２層の構造に限らず、合計３層以上でも良い。また、測定用電極１６は下層部１４を有さず、上層部１５のみを有していても良い。また、実装用電極１２の層構造と測定用電極１６の下層部１４の層構造が同一でなくても良い。   For example, in the above embodiment, the mounting electrode 13 is composed of a total of two layers of the first electrode layer 11 and the second electrode layer 12, but may be a total of one layer or a total of three or more layers. Further, the lower layer portion 14 of the measurement electrode 16 is not limited to the total two-layer structure of the first electrode layer 11 and the second electrode layer 12, and may be a total of three or more layers. Further, the measurement electrode 16 may not have the lower layer part 14 but may have only the upper layer part 15. Further, the layer structure of the mounting electrode 12 and the layer structure of the lower layer portion 14 of the measurement electrode 16 may not be the same.

１ 基板、２ 熱酸化膜、３ 密着層、４ 内部電極層、５ 誘電体層、６ キャパシタ部、７ 無機保護膜、８、１７ 有機保護膜、９ 引き出し電極、１０ 電子部品素体、１１ 第１の電極層、１２ 第２の電極層、１３ 実装用電極、１４ 下層部、１５ 上層部、１６ 測定用電極、１００ 電子部品。   DESCRIPTION OF SYMBOLS 1 Substrate, 2 Thermal oxide film, 3 Adhesion layer, 4 Internal electrode layer, 5 Dielectric layer, 6 Capacitor part, 7 Inorganic protective film, 8 and 17 Organic protective film, 9 Lead electrode, 10 Electronic component body, 11 1 electrode layer, 12 second electrode layer, 13 mounting electrode, 14 lower layer portion, 15 upper layer portion, 16 measuring electrode, 100 electronic component.

Claims (3)

電子部品素体と、
前記電子部品素体の表面上に設けられた複数の実装用電極と、
前記電子部品素体の表面上に設けられ、前記複数の実装用電極の少なくとも１つと電気的に接続された測定用電極と、を備え、
前記複数の実装用電極および前記測定用電極は、同一材料で連続的に形成された引き出し電極の、同一高さの有機保護膜の上に形成された部分の上に、それぞれ形成されていて、
前記測定用電極の表面には、前記実装用電極の表面よりも硬い上層部が設けられている、電子部品。 An electronic component body,
A plurality of mounting electrodes provided on the surface of the electronic component body;
A measuring electrode provided on a surface of the electronic component element body and electrically connected to at least one of the plurality of mounting electrodes;
The plurality of mounting electrodes and the measurement electrodes are respectively formed on portions formed on the organic protective film of the same height of the extraction electrode continuously formed of the same material,
An electronic component, wherein an upper layer part harder than a surface of the mounting electrode is provided on a surface of the measuring electrode. 前記実装用電極は少なくとも１層以上の層構造であり、
前記測定用電極は、前記実装用電極と同一の層構造からなる下層部と、当該下層部上に形成され前記実装用電極の表面より硬い上層部とからなる、請求項１に記載された電子部品。 The mounting electrode has a layer structure of at least one layer,
2. The electron according to claim 1, wherein the measurement electrode includes a lower layer portion having the same layer structure as the mounting electrode, and an upper layer portion formed on the lower layer portion and harder than the surface of the mounting electrode. parts. 前記実装用電極の表面がＡｕからなり、前記測定用電極の表面がＴｉまたはＴｉの自然酸化膜からなる、請求項１または２に記載された電子部品。 The electronic component according to claim 1, wherein a surface of the mounting electrode is made of Au, and a surface of the measurement electrode is made of Ti or a natural oxide film of Ti.
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