JP2001168190A - Semiconductor device and manufacturing method thereof and liquid crystal display and manufacturing method thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device or a liquid crystal display capable of preventing generation of defects in a transparent conductive layer. SOLUTION: The semiconductor device is provided with a substrate 20, a conductive layer 6b, an interlayer insulating film 8, and a transparent conductive layer 9. The conductive layer is formed on the substrate 20. The interlayer insulating film 8 is formed on the conductive layer 6b. The transparent conductive layer 9 is formed so as to extend from an inner portion of the contact hole 10 to an upper surface 15 of the interlayer insulating film 8, and electrically connected to the conductive layer 6b. The upper surface 15 of the interlayer insulating film 18 is smoothed by wet processing.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, a liquid crystal display device, a method for manufacturing a semiconductor device, and a method for manufacturing a liquid crystal display device, and more specifically, to a semiconductor device having a transparent conductive layer, a liquid crystal display device, The present invention relates to a method for manufacturing a semiconductor device and a method for manufacturing a liquid crystal display device.

[0002]

2. Description of the Related Art Conventionally, a thin film transistor type liquid crystal display device (hereinafter, referred to as TFT-LCD) is known as a kind of liquid crystal display device. In this TFT-LCD,
There is a strong demand for low power consumption. One condition for realizing such low power consumption is to increase the effective display area in the lower part of the liquid crystal panel, that is, to realize a high aperture ratio.

In order to realize such a high aperture ratio TFT-LCD, after forming a thin film transistor on a glass substrate, an interlayer insulating film made of a transparent resin is formed so as to cover the thin film transistor. It is effective to use a structure in which a pixel electrode is formed on an interlayer insulating film.

FIGS. 15 and 16 are schematic sectional views for explaining a method of manufacturing a TFT-LCD as a conventional liquid crystal display device. With reference to FIGS. 15 and 16, a method for manufacturing a conventional TFT-LCD will be described.

Referring to FIG. 15, on a glass substrate 120,
After forming a base film (not shown), a conductive film is formed on the base film.
Lines 101 and 102 are formed. The conductive wire 101 is a thin film tiger
Acts as a transistor gate electrode. Also, conductive wire 1
02 functions as a common electrode. Conductive wires 101, 102
A silicon nitride film 103 is formed thereon. Silicon nitride film
Form an amorphous silicon film (not shown) on 103
I do. N on the amorphous silicon film⁺Type amorphous
A silicon film (not shown) is formed. n⁺Type Amorpha
A resist pattern is formed on the silicon film. This
Amorphous silicon film using distaste pattern as mask
And n⁺Type amorphous silicon film and partially etchin
Amorphous silicon film
104 and n ⁺Formed amorphous silicon film 105
I do. This n⁺Type amorphous silicon film 105 is a thin film
Acts as ohmic contact in transistors
And the amorphous silicon film 104 is a thin film transistor
Acts as a channel region.

Next, a chromium film is formed using a sputtering method so as to cover the entire surface. By processing the chromium film using the photoengraving technology, the source electrode 106a
And a drain electrode 106b are formed. Next, a passivation film 107 made of a silicon nitride film is formed on the source electrode 106a and the drain electrode 106b. Then, an interlayer insulating film 108 is formed on the passivation film 107. Upper surface 115 of interlayer insulating film 108 is flattened. As the interlayer insulating film 108, a photosensitive acrylic transparent resin is used. Next, a contact hole 110 is formed in the interlayer insulating film 108 in a region located on the drain electrode 106b by performing exposure and development processing. Next, the passivation film 107 is removed by dry etching using the interlayer insulating film 108 as a mask. Thus, a part of the upper surface of the drain electrode 106b is exposed. And the drain electrode 1
On the upper surface of 06b, oxygen plasma treatment with oxygen plasma 116 is performed in order to remove the fluorine-based compound generated during the dry etching. As a result, a structure as shown in FIG. 15 is obtained.

Next, an ITO film to be a tin-added indium oxide (ITO) pixel electrode 109 as a transparent electrode is formed so as to extend from the inside of the contact hole 110 to the upper surface of the interlayer insulating film 108. . This IT
A resist pattern 121 (see FIG. 16) is formed on the O film. Using this resist pattern 121 as a mask, the ITO film is partially removed by wet etching. As a result, an ITO pixel electrode 109 as a transparent conductive layer as shown in FIG. 16 is formed.

Thereafter, the resist pattern 121 is removed. Then, the other glass substrate on which the counter electrode is formed and the glass substrate on which the ITO pixel electrode 109 is formed are opposed and fixed so as to keep a predetermined interval. Then, after injecting liquid crystal into the gap between these glass substrates, other predetermined steps are performed so that the TFT
-An LCD can be obtained.

Here, the reason why a high aperture ratio of the liquid crystal display device can be realized by the structure shown in FIGS. 15 and 16 is as follows. That is, the first
The reason is that the ITO pixel electrode 109 is formed on the upper surface 115 of the planarized interlayer insulating film 108,
The generation of a step in the ITO pixel electrode 109 can be prevented. Therefore, it is possible to prevent the alignment disorder of the liquid crystal molecules due to the presence of the step in the ITO pixel electrode 109. As a result, it is possible to prevent a problem that a display defect of the liquid crystal display device occurs due to the disorder of the alignment of the liquid crystal molecules. As a result, a wider effective display area can be realized. The second reason is that the interlayer insulating film 108
Is thickened to about 1 to 3 μm, so that the ITO pixel electrode 109 overlaps the conductive line 101 or the source electrode 106 a as a gate electrode located below the interlayer insulating film 108 and the ITO pixel electrode 109. Can be arranged. Therefore, the ITO pixel electrode 109
Can be made larger. As a result,
A wider effective display area can be realized.

[0010]

However, the above-mentioned conventional TFT-LCD has the following problems. That is, referring to FIG.
In the manufacturing process of D, in order to improve the electrical contact between the ITO pixel electrode 109 (see FIG. 16) and the drain electrode 106b, oxygen plasma is applied to the upper surface of the drain electrode 106b exposed at the bottom of the contact hole 110. An oxygen plasma process using the semiconductor device 116 is performed. Then, the upper surface 115 of the interlayer insulating film 108 is damaged by the oxygen plasma treatment, and the upper surface 115 of the interlayer insulating film 108 becomes porous. On the upper surface 115 of such a porous interlayer insulating film 108, FIG.
When the ITO pixel electrode 109 is formed as shown in FIG.
In the region 118, an etchant used for wet etching for forming the ITO pixel electrode 109 may enter a boundary region between the ITO pixel electrode 109 and the interlayer insulating film 108. In this case, since the etching solution reaches the lower surface of the ITO pixel electrode 109 facing the boundary region, the lower portion of the ITO pixel electrode 109 is etched by the etching solution. As a result, the edge of the ITO pixel electrode 109 located in the region 118 is peeled off from the interlayer insulating film 108 or the ITO pixel electrode 10
9 was excessively removed by etching, which caused a patterning defect such that the shape of the ITO pixel electrode 109 did not become the designed shape.

An ITO film is formed on an interlayer insulating film 108 made of an organic film such as a transparent resin.
The etching rate when the TO film is partially removed by etching is higher than the etching rate when the ITO film is formed on the interlayer insulating film made of an inorganic material and the ITO film is partially removed by etching. Become. For this reason, in the etching for forming the ITO pixel electrode 109, a slight deviation in the process conditions causes an accident such as excessive etching of the ITO film or conversely, residual etching. In other words, a slight shift in the process conditions as described above greatly changes the etching amount of the ITO pixel electrode 109. Therefore, at the end of the ITO pixel electrode 109 located in the region 118, the ITO pixel electrode 109 due to excessive etching is formed. In some cases, defects such as a defect in 109 or separation from the interlayer insulating film 108 occurred. Such an I
The defect of the TO pixel electrode 109 has been one of the major factors that eventually lowers the manufacturing yield of the TFT-LCD.

The present invention has been made to solve the above-mentioned problems, and one object of the present invention is to
An object of the present invention is to provide a semiconductor device capable of preventing a defect from occurring in a transparent conductive layer such as an ITO pixel electrode and a method for manufacturing the same.

Another object of the present invention is to provide a liquid crystal display device capable of preventing occurrence of defects in a transparent conductive layer such as an ITO pixel electrode, and a method of manufacturing the same.

[0014]

A semiconductor device according to one aspect of the present invention includes a substrate, a conductive layer, an interlayer insulating film,
A transparent conductive layer. The conductive layer is formed on the substrate. The interlayer insulating film is formed on the conductive layer, and has a contact hole formed in a region located on the conductive layer. The transparent conductive layer is formed to extend from inside the contact hole to the upper surface of the interlayer insulating film, and is electrically connected to the conductive layer. The upper surface of the interlayer insulating film is smoothed by wet processing (claim 1).

As described above, since the upper surface of the interlayer insulating film is smoothed by the wet treatment, the adhesion between the transparent conductive layer and the upper surface of the interlayer insulating film can be improved. As a result, it is possible to prevent an etchant or the like used for forming the transparent conductive layer from entering the boundary region between the transparent conductive layer and the interlayer insulating film. Therefore, the region of the transparent conductive layer that should not be etched is partially etched by the etchant that has entered the boundary region, or the transparent conductive layer is peeled off from the upper surface of the interlayer insulating film. The occurrence of defects can be prevented.

In the semiconductor device according to the one aspect, it is preferable that the wet treatment includes immersing the substrate on which the interlayer insulating film is formed in a chemical solution capable of etching a material forming the interlayer insulating film. Further, it is preferable to use a sulfuric acid solution as the chemical solution.

A semiconductor device according to another aspect of the present invention includes a substrate, a conductive layer, an interlayer insulating film, and a transparent conductive layer. The conductive layer is formed on the substrate. The interlayer insulating film is formed on the conductive layer, and has a contact hole formed in a region located on the conductive layer. The transparent conductive layer is formed to extend from inside the contact hole to the upper surface of the interlayer insulating film, and is electrically connected to the conductive layer. The side wall of the contact hole of the interlayer insulating film includes a plasma-treated surface. The upper surface of the interlayer insulating film includes a surface which is relatively smoother than the surface subjected to the plasma treatment.

With this configuration, since the upper surface of the interlayer insulating film includes a surface that is relatively smoother than when the plasma treatment is performed, the boundary region between the upper surface of the interlayer insulating film and the transparent conductive layer is formed. (Interface) adhesion can be improved. As a result, in wet etching performed in the step of forming the transparent conductive layer, it is possible to effectively prevent the etchant from entering the boundary region between the transparent conductive layer and the upper surface of the interlayer insulating film. Thereby, it is possible to reliably prevent the lower portion of the transparent conductive layer from being damaged by the etchant that has entered the boundary region.

In a semiconductor device according to another aspect, the transparent conductive layer preferably includes a lower transparent conductive layer portion and an upper transparent conductive layer portion. Preferably, the lower transparent conductive layer portion is formed so as to be in contact with the upper surface of the interlayer insulating film. The upper transparent conductive layer portion is preferably formed on the lower transparent conductive layer portion (claim 3).

In this case, in the manufacturing process of this semiconductor device, when performing an oxygen plasma treatment or the like for the purpose of improving the reliability of the electrical contact between the conductive layer and the transparent conductive layer at the bottom of the contact hole, the lower layer must be formed beforehand. This oxygen plasma treatment can be performed with the transparent conductive layer portion formed on the upper surface of the interlayer insulating film. That is, in the above-described oxygen plasma treatment, the lower transparent conductive layer portion can be used as a protective film for preventing the upper surface of the interlayer insulating film from being damaged by the oxygen plasma treatment. With this configuration, it is possible to prevent the upper surface of the interlayer insulating film from being exposed to oxygen plasma, so that it is possible to reliably prevent the upper surface of the interlayer insulating film from becoming porous due to the oxygen plasma. Therefore, it is possible to prevent the adhesion between the transparent conductive layer and the upper surface of the interlayer insulating film from deteriorating.

In the semiconductor device according to the above another aspect, the thickness of a portion formed on the upper surface of the interlayer insulating film in the transparent conductive layer is formed inside the contact hole of the interlayer insulating film in the transparent conductive layer. It is preferable that the thickness is larger than the thickness of the bent portion.

Here, there is a thickness difference between the thickness of the portion formed on the upper surface of the interlayer insulating film and the thickness of the portion formed inside the contact hole in the transparent conductive layer. . A transparent conductive layer portion having a film thickness corresponding to this film thickness difference can be formed on the upper surface of the interlayer insulating film in advance in the semiconductor device manufacturing process. Then, in order to improve the reliability of electrical contact between the transparent conductive layer and the conductive layer at the bottom of the contact hole, a case where oxygen plasma treatment is performed on the surface of the conductive layer is considered. In this case, the transparent conductive layer can be used as a protective film for protecting the upper surface of the interlayer insulating film during the oxygen plasma treatment.
As a result, the upper surface of the interlayer insulating film can be prevented from being directly exposed to the oxygen plasma, so that the upper surface of the interlayer insulating film can be more reliably smoothed than the plasma-treated surface. As a result, the adhesion between the transparent conductive layer and the upper surface of the interlayer insulating film can be reliably improved.

A semiconductor device according to another aspect of the present invention includes a substrate, a conductive layer, an interlayer insulating film, and a transparent conductive layer. The conductive layer is formed on the substrate. The interlayer insulating film is formed on the conductive layer, and has a contact hole formed in a region located on the conductive layer. The transparent conductive layer is formed to extend from inside the contact hole to the upper surface of the interlayer insulating film, and is electrically connected to the conductive layer. The transparent conductive layer includes a lower transparent conductive layer portion formed so as to be in contact with the upper surface of the interlayer insulating film, and an upper transparent conductive layer portion formed on the lower transparent conductive layer portion. (Claim 5).

Here, in the manufacturing process of the semiconductor device,
To improve the reliability of electrical contact between the conductive layer and the transparent conductive layer at the bottom of the contact hole, consider the case where oxygen plasma treatment is performed on the conductive layer exposed at the bottom of the contact hole after forming the contact hole. . In this case, if the lower transparent conductive layer portion is previously formed on the upper surface of the interlayer insulating film, the lower transparent conductive layer portion can be used as a protective film on the upper surface of the interlayer insulating film. This prevents the upper surface of the interlayer insulating film located under the lower transparent conductive layer portion from being exposed to oxygen plasma, so that the upper surface of the interlayer insulating film is more exposed than the surface subjected to the oxygen plasma treatment. Can be smoothed. As a result, the adhesion at the interface between the transparent conductive layer and the upper surface of the interlayer insulating film can be improved. as a result,
An etchant used for wet etching when forming the transparent conductive layer can be prevented from entering the interface between the transparent conductive layer and the upper surface of the interlayer insulating film. for that reason,
It is possible to reliably prevent the problem that the edge portion of the transparent conductive layer is damaged by the penetrated etching solution.

[0025] In the semiconductor device according to the above aspect, another aspect, or another aspect, the transparent conductive layer preferably contains tin-added indium oxide.

In this case, tin-added indium oxide (IT
The etching rate of a transparent conductive layer containing O (Indium Tin Oxide) is greatly affected by the material of an interlayer insulating film located thereunder. For example, when an organic film is used for the interlayer insulating film, the etching rate is higher than when an inorganic material is used for the interlayer insulating film, so that it is difficult to control the amount of etching and the like. Therefore, depending on the process conditions, excessive etching exceeding the design value may occur.
In such a case, the above-described problem that the etchant penetrates into the boundary region between the transparent conductive layer and the upper surface of the interlayer insulating film at the end of the transparent conductive layer containing tin-added indium oxide may occur. High in nature. Therefore, when the present invention is applied to a semiconductor device having a transparent conductive layer containing tin-added indium oxide, the effect of preventing the above-described defects of the transparent conductive layer from being generated is particularly remarkable.

In the semiconductor device according to the above aspect, another aspect, or another aspect, the interlayer insulating film preferably includes an organic film.

In this case, if a transparent conductive layer containing tin-added indium oxide is formed on an interlayer insulating film containing an organic film, the etching rate particularly in the etching for forming the transparent conductive layer is increased. In the etching process, over-etching or the like is likely to occur. Such over-etching is one of the factors that cause the etchant to enter the boundary region between the transparent conductive layer and the upper surface of the interlayer insulating film. Therefore, if the present invention is applied to the semiconductor device having the above-described configuration, the intrusion of the etching solution into the boundary region can be effectively prevented.
A remarkable effect can be obtained.

In the semiconductor device according to the above aspect, another aspect, or another aspect, the interlayer insulating film preferably contains a transparent resin.

In this case, an organic film such as a transparent resin is
The surface is easily damaged by the oxygen plasma treatment for improving the reliability of electrical contact between the conductive layer and the transparent conductive layer at the bottom of the contact hole.
Therefore, the upper surface of the interlayer insulating film containing the transparent resin is easily made porous by the plasma treatment, so that the adhesion at the boundary between the transparent electrode and the upper surface of the interlayer insulating film has been reduced. Therefore, if the present invention is applied to a semiconductor device having an interlayer insulating film containing a transparent resin, the upper surface of the interlayer insulating film can be surely smoothed, so that the above-described problem can be reliably prevented. As a result, the present invention has a particularly remarkable effect in a semiconductor device having an interlayer insulating film containing a transparent resin.

[0031] In the semiconductor device according to the above aspect, another aspect or another aspect, it is preferable that the semiconductor device further includes a field effect transistor formed on the substrate and including a conductive region. Preferably, the electrodes are electrically connected.

In this case, the field effect transistor can be used as a field effect transistor formed in a pixel region of a liquid crystal display device, and the transparent conductive layer can be used as a pixel electrode of the liquid crystal display device. Since the occurrence of a defect at the end of the pixel electrode can be effectively prevented by the present invention, the production yield of the liquid crystal display device can be prevented from being reduced due to such damage to the pixel electrode.

A liquid crystal display device according to another aspect of the present invention includes the semiconductor device according to the above one aspect, another aspect, or another aspect (claim 10).

In this case, if the transparent conductive layer is used as a pixel electrode of a liquid crystal display device, the edge of the pixel electrode can be effectively prevented from being damaged. The remarkable effect is obtained that the deterioration due to the defect of the pixel electrode can be prevented and the production yield of the liquid crystal display device can be prevented from lowering.

In a method for manufacturing a semiconductor device according to another aspect of the present invention, a conductive layer is formed on a substrate. An interlayer insulating film is formed over the conductive layer. By forming a contact hole in the interlayer insulating film in a region located on the conductive layer, the conductive layer is exposed. Plasma treatment is performed on the exposed surface of the conductive layer and the upper surface of the interlayer insulating film.
The upper layer including the upper surface of the interlayer insulating film is removed by wet processing. A transparent conductive layer is formed so as to extend from the inside of the contact hole to the upper surface of the wet-processed interlayer insulating film (claim 11).

As described above, since the upper layer including the upper surface of the interlayer insulating film subjected to the plasma treatment is removed by the wet treatment, the upper surface of the porous interlayer insulating film formed by the plasma treatment is surely removed. Can be. That is, the upper surface of the interlayer insulating film can be smoothed by the wet processing. As a result, the adhesion of the boundary region between the transparent conductive layer formed on the upper surface of the interlayer insulating film and the upper surface of the interlayer insulating film can be improved. For this reason, it is possible to prevent an etchant or the like used in wet etching for forming the transparent conductive layer from entering the boundary region. Therefore, it is possible to reliably prevent a region that should not be etched, such as a lower portion and an end portion of the transparent conductive layer, from being damaged by the etchant.

In a method of manufacturing a semiconductor device according to still another aspect of the present invention, a conductive layer is formed on a substrate. An interlayer insulating film is formed over the conductive layer. A protective film is formed on an upper surface of the interlayer insulating film. In a region located on the conductive layer, a part of the interlayer insulating film and the protective film is removed to form a contact hole, so that the conductive layer is exposed. With the protective film formed, plasma treatment is performed on the exposed surface of the conductive layer. A transparent conductive layer is formed so as to extend from inside the contact hole to above the upper surface of the interlayer insulating film.

As described above, since the plasma processing is performed with the protective film formed, the upper surface of the interlayer insulating film is not directly subjected to the plasma processing. Therefore, it is possible to reliably prevent the upper surface of the interlayer insulating film from becoming porous due to the plasma treatment. Since the upper surface of the interlayer insulating film can be kept relatively smoother than the surface subjected to the plasma treatment, the adhesion of the boundary region between the upper surface of the interlayer insulating film and the transparent conductive layer is improved. be able to.
For this reason, it is possible to prevent an etchant or the like used for forming the transparent conductive layer from entering the boundary region.
Thus, it is possible to reliably prevent the edge of the transparent conductive layer from being damaged by the etchant that has permeated the boundary region.

It is preferable that the method for manufacturing a semiconductor device according to the still another aspect further includes a step of removing the protective film. In the step of forming the transparent conductive layer, it is preferable to form the transparent conductive layer so as to extend from the inside of the contact hole to the upper surface of the interlayer insulating film from which the protective film has been removed. .

In this case, since the transparent conductive layer is formed after the protective film of the interlayer insulating film used for performing the plasma treatment is once removed, the degree of freedom in selecting a material to be used as the protective film is increased. can do.

In the method of manufacturing a semiconductor device according to the above still another aspect, in the step of forming the transparent conductive layer, the transparent conductive layer is formed so as to extend from inside the contact hole to above the protective film. It is preferable to form a transparent conductive layer including a protective film and a transparent conductive layer portion (claim 14).

In this case, since the transparent conductive layer is formed without removing the protective film, the step of removing the protective film can be omitted. As a result, the number of manufacturing steps of the semiconductor device can be reduced, so that the manufacturing cost of the semiconductor device can be reduced.

A method of manufacturing a liquid crystal display device according to another aspect of the present invention includes the method of manufacturing a semiconductor device according to the above another aspect or still another aspect.
5).

In this case, if the step of forming the transparent conductive layer is applied to the step of forming the pixel electrode of the liquid crystal display device, the edge of the pixel electrode of the liquid crystal display device may be damaged by an etchant or the like. Can be reliably prevented. As a result, there is a remarkable effect that a reduction in the manufacturing yield of the liquid crystal display device can be prevented.

[0045]

Embodiments of the present invention will be described below with reference to the drawings. In the drawings below, the same or corresponding portions have the same reference characters allotted, and description thereof will not be repeated.

(Embodiment 1) FIG. 1 is a schematic sectional view showing Embodiment 1 of a liquid crystal display device according to the present invention. The liquid crystal display will be described with reference to FIG.

Referring to FIG. 1, conductive lines 1 and 2 are formed on a glass substrate 20 as scanning wirings made of a chromium film. The thickness of the conductive lines 1 and 2 is about 400 nm. The silicon nitride film 3 is formed on the glass substrate 20 and the conductive lines 1 and 2. The thickness of the silicon nitride film 3 is about 400 nm. In a region located on conductive line 1, amorphous silicon film 4 is formed on silicon nitride film 3. The thickness of the amorphous silicon film 4 is about 50 nm. An n ⁺ type amorphous silicon film 5 is formed on the amorphous silicon film 4. The thickness of the n ⁺ type amorphous silicon film 5 is about 30 nm. n ⁺ type amorphous silicon film 5
On the silicon nitride film 3, a source electrode 6a made of a chromium film and a drain electrode 6b as a conductive layer are formed. The thickness of the source electrode 6a and the drain electrode 6b is about 400 nm. On the source electrode 6a, the drain electrode 6b and the silicon nitride film 3, a passivation film 7 made of a silicon nitride film is formed. The thickness of the passivation film 7 is about 100 nm. On the passivation film 7, an interlayer insulating film 8 is formed. An acrylic transparent resin is used for the interlayer insulating film 8. The thickness of the interlayer insulating film 8 is about 2 μm.
A contact hole 10 is formed by removing part of the interlayer insulating film 8 and the passivation film 7 by etching. An ITO pixel electrode 9 as a transparent conductive layer is formed so as to extend from inside contact hole 10 onto upper surface 15 of interlayer insulating film 8. I
The thickness of the TO pixel electrode 9 is about 100 nm. Although not shown, an alignment film is formed on the ITO pixel electrode 9. An upper glass substrate 12 having a counter electrode 13 is disposed on the alignment film via a liquid crystal 11.
Although not shown, an alignment film is formed between the counter electrode 13 and the liquid crystal 11.

Here, a thin film transistor (TFT) 14 as a field effect transistor is formed from the conductive line 1, the silicon nitride film 3, the amorphous silicon film 4, the n ⁺ type amorphous silicon film 5, the source electrode 6a and the drain 6b. I have. The conductive line 1 acts as a gate electrode,
The amorphous silicon film 4 functions as a channel region. The n ⁺ type amorphous silicon film 5 functions as an ohmic contact of the thin film transistor 14.

As shown in the later-described manufacturing process, the substrate including the interlayer insulating film 8 formed thereon is immersed in a sulfuric acid solution as a wet process, so that the layer including the upper surface of the interlayer insulating film 8 and the side wall of the contact hole 10 are Some have been removed. Therefore, upper surface 15 of interlayer insulating film 8 is in a sufficiently smoothed state.

As described above, the upper surface 15 of the interlayer insulating film 8
Are sufficiently smoothed by the wet processing,
The adhesion at the interface between the TO pixel electrode 9 and the upper surface 15 of the interlayer insulating film 8 can be improved. Therefore, as shown in a manufacturing process to be described later, at the end portion (region 18) of the ITO pixel electrode 9, wet etching for forming the ITO pixel electrode 9 in the boundary region between the ITO pixel electrode and the interlayer insulating film 8 is performed. The liquid can surely be prevented from seeping. Therefore, it is possible to prevent the edge portion of the ITO pixel electrode 9 from being damaged by the etching solution.

Although ITO is used as the material of the pixel electrode, it is very difficult to adjust the etching conditions of this ITO because the etching speed changes depending on the material of the underlying film. Therefore, it is necessary to perform a sufficient over-etching in the etching for forming the ITO pixel electrode 9. However, when such an over-etching is performed, the over-etching between the ITO pixel electrode 9 and the interlayer insulating film 8 is required. Since the infiltration of the etchant into the boundary region can be effectively prevented, the occurrence of defects such as peeling at the end of the ITO pixel electrode 9 can be reliably prevented. That is,
In the liquid crystal display device according to the present invention, particularly remarkable effects can be obtained when ITO is used as a material of the pixel electrode.

An acrylic transparent resin, which is both a transparent resin and an organic film, is used as the interlayer insulating film 8. Such a transparent resin can be easily formed by an oxygen plasma treatment shown in a manufacturing process described later. The surface becomes porous. Then, on such a porous surface, IT
When forming the O pixel electrode, this transparent resin and ITO
The above-described etching solution easily penetrated into the boundary region with the pixel electrode, and the probability of occurrence of defects was high.
Therefore, when the present invention is applied to a liquid crystal display device including a transparent resin as the interlayer insulating film 8 as shown in FIG. 1, the remarkable effect that the above-described failure can be effectively prevented can be obtained.

The drain electrode 6b of the thin film transistor 14 is electrically connected to the ITO pixel electrode 9 at the bottom of the contact hole 10. The thin film transistor 14 and the ITO pixel electrode 9 constitute a thin film transistor and an electrode that constitute a pixel of the liquid crystal display device. By doing so, the present invention can be easily applied to the structure of the pixel region of the liquid crystal display device. Further, it is possible to prevent the occurrence of a defect such as peeling or loss at the edge of the ITO pixel electrode 9 as the transparent conductive layer, so that the display characteristics of the screen of the liquid crystal display device are reliably prevented from being deteriorated due to such a defect. It has a remarkable effect that it can be done.

2 to 5 are schematic sectional views for explaining a method of manufacturing the liquid crystal display device shown in FIG. Figures 2-5
With reference to, a method for manufacturing a liquid crystal display device will be described.

Referring to FIG. 2, first, a chromium film is formed on glass substrate 20 by using a sputtering method. After a resist pattern (not shown) is formed on the chromium film, a part of the chromium film is removed by performing etching using the resist pattern as a mask. After that, the resist pattern is removed. Thus, the conductive lines 1 and 2 are formed. Next, a silicon nitride film 3 as an insulating film is formed on the conductive wires 1 and 2 and the glass substrate 20 by using a plasma CVD method. Next, an amorphous silicon film is formed on the silicon nitride film 3 by using a plasma CVD method. Similarly, an n ⁺ type amorphous silicon film is formed on this amorphous silicon film by using the plasma CVD method. Then, a resist pattern is formed on the n ⁺ type amorphous silicon film. Using this resist pattern as a mask, the n ⁺ -type amorphous silicon film and the amorphous silicon film are partially removed by etching. Thus, an amorphous silicon film 4 acting as a channel region and an n ⁺ type amorphous silicon film 5 acting as an ohmic contact are formed. After that, the resist pattern is removed. Next, a chromium film is formed on the n ⁺ type amorphous silicon film 5 and the silicon nitride film 3 by using a sputtering method.
A resist pattern is formed on the chromium film. Using this resist pattern as a mask, a part of the chromium film is removed by etching, so that the source electrode 6 is removed.
a and the drain electrode 6b are formed.

Next, the source electrode 6a and the drain electrode 6b
A silicon nitride film as a passivation film 7 is formed on the silicon nitride film 3 using a plasma CVD method. On this passivation film 7, an interlayer insulating film 8 (see FIG. 3) is formed. As the interlayer insulating film 8, a photosensitive acrylic transparent resin is used. The upper surface of the interlayer insulating film 8 is flattened in order to eliminate the influence of the step due to the field effect transistor 14. Then, an opening is formed in the interlayer insulating film 8 in a region located on the drain electrode 6b by using an exposure / development process by a photoengraving technique. The passivation film 7 is partially removed by dry etching using the opening of the interlayer insulating film 8 as a mask. Thus, contact hole 10 (see FIG. 3)
To form In this dry etching step, a fluorine-based compound is generated on the surface of the drain electrode 6b exposed at the bottom of the contact hole 10. And
As shown in FIG. 3, oxygen plasma 1 is used to remove this fluorine-based compound from the exposed surface of drain electrode 6b.
6 is performed.

By this oxygen plasma treatment, the upper surface 15 of the interlayer insulating film and the surface of the side wall of the contact hole 10 become porous as shown in FIG.

The conditions for the oxygen plasma treatment were as follows: the pressure in the treatment chamber was 250 Pa, the supply amount of oxygen as a reaction gas was 0.5 liter / min (500 sccm), the RF power was 1500 W, and the mode was reactive ion etching. .

Next, as shown in FIG. 4, in order to smooth the surface by removing the surface layer of the interlayer insulating film 8 damaged by the oxygen plasma treatment, the interlayer insulating film 8 is wet-processed. A sulfuric acid solution 17 heated to 70 ° C. was brought into contact with the surface. Specifically, the substrate on which the interlayer insulating film 8 was formed was immersed in a sulfuric acid solution. As a result, the damaged surface layer of the interlayer insulating film 8 is dissolved by sulfuric acid, so that the upper surface 15 of the interlayer insulating film 8 and the side wall surface of the contact hole 10 are smoothed.

In the above-described process, the damaged surface layer of the interlayer insulating film 8 is removed by a wet process using a sulfuric acid solution. However, such a wet process is highly controllable, so The removal amount of the surface layer of the interlayer insulating film 8 can be accurately controlled. Therefore, the remaining film thickness of the interlayer insulating film 8 can be accurately controlled.

When plasma ashing or the like is used to remove the damaged surface layer of the interlayer insulating film 8, the interlayer insulating film 8 made of a transparent resin is altered or colored by this plasma treatment. In some cases, such a problem may occur. However, if the surface layer of the interlayer insulating film 8 is removed by a wet treatment as in the method according to the present invention, the above-mentioned problems such as deterioration and coloring of the interlayer insulating film can be reliably prevented.

Next, a tin-added indium oxide (IT) made of indium oxide and tin oxide is formed on the smoothed upper surface 15 of the interlayer insulating film 8 by sputtering.
O) A film is formed. Thereafter, a heat treatment is performed in which the ambient temperature is kept at 230 ° C. for 60 minutes. Then, after forming a resist pattern on the ITO film, the ITO pixel electrode 9 is formed by partially removing the ITO film by etching using the resist pattern as a mask. After that, the resist pattern is removed. Thus, a structure as shown in FIG. 5 is obtained. In the etching for forming the ITO pixel electrode, a hydrochloric acid-nitric acid based etchant is used. The temperature of this etching solution is 50
° C and the etching time is 150 seconds. Thus, a TFT array substrate for a liquid crystal display device as shown in FIG. 5 is obtained.

Thereafter, an upper glass substrate 12 provided with a counter electrode 13 (see FIG. 1) is prepared, and a predetermined process is performed to obtain a liquid crystal display device as shown in FIG.

Here, as shown in FIG.
The upper surface 15 of the ITO pixel electrode 9 and the upper surface 15 of the interlayer insulating film 8 are smoothed by wet processing.
The adhesiveness of the boundary region between them is improved as compared with the related art. Therefore, when wet etching for forming the ITO pixel electrode 9 is performed, it is possible to reliably prevent the etchant from penetrating into the boundary region between the ITO pixel electrode 9 and the interlayer insulating film 8 in the region 18. For this reason, in the region 18, I
The occurrence of a defect such as peeling or loss of the TO pixel electrode 9 can be reliably prevented. Thereby, it is possible to prevent a problem that the display characteristics of the liquid crystal display device are deteriorated due to the defect of the ITO pixel electrode 9.

In the wet etching for forming the ITO pixel electrode 9, it is necessary to perform a sufficient over-etching to surely form the ITO pixel electrode 9. Since the upper surface 15 of the interlayer insulating film 8 is sufficiently smoothed as described above, the permeation of the etching solution into the boundary region in the region 18 can be prevented when such over-etching is performed. For this reason,
The ITO pixel electrode 9 can be formed so as to have a designed shape.

(Embodiment 2) Embodiment 2 of the liquid crystal display device according to the present invention basically has the same configuration as the liquid crystal display device shown in FIG. However, in the manufacturing method, a sulfuric acid solution is used in the first embodiment of the present invention as shown in FIG. 4, but in the second embodiment of the present invention, nitric acid, a resist developing solution or a resist stripping solution is used. Use a chemical solution as the main component. Even in this case, similarly to the case where sulfuric acid is used, the damaged surface layer of the interlayer insulating film 8 can be removed, so that the same effect as in the first embodiment of the present invention can be obtained. . It should be noted that the same effect can be obtained by using a chemical solution such as an acrylic transparent resin capable of etching a material constituting the interlayer insulating film 8 instead of the above-mentioned solution such as nitric acid.

(Embodiment 3) FIG. 6 is a schematic sectional view showing Embodiment 3 of a liquid crystal display device according to the present invention. FIG.
The liquid crystal display device will be described with reference to FIG.

Referring to FIG. 6, the liquid crystal display device basically has the same structure as the liquid crystal display device shown in FIG.
The sidewall of contact hole 10 includes a plasma-treated surface, while upper surface 15 of interlayer insulating film 8 is a surface that is relatively smoother than the plasma-treated surface of contact hole 10 on the sidewall. .

As described above, the upper surface 15 of the interlayer insulating film 8
Is relatively smoother than the surface subjected to the plasma treatment, so that the adhesion in the boundary region between the interlayer insulating film 8 and the ITO pixel electrode 9 can be improved as compared with the related art.
As a result, in a manufacturing process to be described later, an etchant used for wet etching for forming the ITO pixel electrode 9 is formed in the region 18 below the ITO pixel electrode (IT).
Infiltration into the boundary region between the O pixel electrode 9 and the interlayer insulating film 8) can be prevented. As a result, the end portion of the ITO pixel electrode 9 becomes
It is possible to prevent the occurrence of problems such as peeling or chipping from the substrate.

7 to 9 are schematic cross-sectional views for explaining a method of manufacturing the liquid crystal display device shown in FIG. Figures 7-9
With reference to, a method for manufacturing a liquid crystal display device will be described.

First, the thin film transistor 14 (see FIG. 7) is formed on the glass substrate 20 (see FIG. 7) by performing the process shown in FIG. Then, the first embodiment
The passivation film 7 (see FIG. 7) is formed so as to cover the thin film transistor 14 by the same process as described above. A photosensitive acrylic transparent resin is applied on the passivation film 7, and then exposed and baked to form an interlayer insulating film 8 having a thickness of about 2 μm (see FIG. 7). A conductor film 19 (see FIG. 7) is formed on the interlayer insulating film 8 as a protective film. As this conductor film 19, an aluminum film is used. The thickness of the conductor film 19 is about 50 nm. Next, a resist pattern 21 (see FIG. 7) is formed on the conductor film 19. Using the resist pattern 21 as a mask, the conductive film 1 is wet-etched.
9 is partially removed. In this wet etching, a phosphoric acid-based etchant is used. Thus, the opening 22 (see FIG. 7) is formed in the conductor film 19. By using the conductor film 19 in which the opening 22 is formed as a mask, the interlayer insulating film 8 and the passivation film 7 are continuously etched by dry etching to form the contact hole 10 (see FIG. 7). . As a gas used for the dry etching, a gas containing CF ₄ and O ₂ is used. The contact hole 10 thus formed
At the bottom, the upper surface of the drain electrode 6b is partially exposed. Thus, a structure as shown in FIG. 7 is obtained.

Next, on the exposed upper surface of the drain electrode 6b, there is a fluorine-based compound generated during the above-mentioned dry etching. As shown in FIG. 8, an oxygen plasma process using oxygen plasma 16 is performed to remove the fluorine-based compound. At this time,
The fluorine compound is removed from the upper surface of the drain electrode 6b exposed at the bottom of the contact hole 10, and the side wall of the contact hole 10 is made porous by being subjected to plasma processing by the oxygen plasma processing. When performing this oxygen plasma treatment,
Since the conductor film 19 as a protective film is formed on the interlayer insulating film 8, the upper surface 15 of the interlayer insulating film 8 is not directly exposed to the oxygen plasma 16. Therefore, upper surface 15 of interlayer insulating film 8 can be a surface that is relatively smoother than the side wall of contact hole 10.

Next, the resist pattern 21 is removed using a resist stripper. Then, the conductor film 19 is removed using a phosphoric acid-based etchant. Next, as in the step shown in FIG.
An ITO film is formed so as to extend from the upper surface 15 of the substrate to the inside of the contact hole 10. Then, after performing a heat treatment in the same manner as in the step shown in FIG. 5, a resist pattern is formed on the ITO film. By performing wet etching using this resist pattern as a mask, I
The TO pixel electrode 9 is formed. After that, the resist pattern is removed. Thus, a structure as shown in FIG. 9 is obtained.

As described above, the upper surface 15 of the interlayer insulating film 8
Has a smooth surface since it has not been subjected to oxygen plasma treatment. Therefore, good adhesion is maintained in the boundary region between the upper surface 15 of the interlayer insulating film 8 and the ITO pixel electrode 9. Therefore, similarly to the method of manufacturing the liquid crystal display device according to the first embodiment of the present invention, it is possible to prevent the etchant for wet etching from permeating into the boundary region between ITO pixel electrode 9 and interlayer insulating film 8. Therefore, the same effect as in the first embodiment of the present invention can be obtained.

Further, a conductor film 19 is used as a protective film,
Since the protective film 19 is removed before the formation of the ITO pixel electrode 9, no matter what material is selected as the conductor film 19 as the protective film, basically, the material of the completed liquid crystal display device will be described. It does not adversely affect the structure. Therefore, the degree of freedom in selecting a material that can be used as the conductor film 19 as the protective film can be increased.

(Embodiment 4) FIG. 10 is a schematic sectional view showing Embodiment 4 of a liquid crystal display device according to the present invention.
The liquid crystal display will be described with reference to FIG.

Referring to FIG. 10, the liquid crystal display basically has the same structure as the liquid crystal display shown in FIG.
However, in the liquid crystal display device shown in FIG. 10, the ITO pixel electrode 9 formed on the upper surface 15 of the interlayer insulating film 8 has a lower ITO pixel electrode 23 as a lower transparent conductive layer portion and an upper transparent conductive layer portion. Upper layer ITO pixel electrode 24 as
And The thickness of the ITO pixel electrode 9 formed on the upper surface 15 of the interlayer insulating film 8 is larger than the thickness of the ITO pixel electrode 9 inside the contact hole 10.

As described above, the ITO pixel electrode 9 is formed on the upper surface 15 of the interlayer insulating film 8 by the lower ITO pixel electrode 2.
3 and the upper ITO pixel electrode 24, the lower ITO film 25 (see FIG. 12) serving as the lower ITO pixel electrode 23 is subjected to oxygen plasma processing as shown in a manufacturing method described later. Can be used as a protective film for Therefore, it is possible to reliably prevent the upper surface of the interlayer insulating film 8 from being damaged by the oxygen plasma treatment. As a result, the smoothness of the upper surface of the interlayer insulating film 8 can be improved, and the same effect as that of the liquid crystal display device according to the second embodiment of the present invention can be obtained.

Further, since the lower ITO pixel electrode 23 exists, the thickness of the ITO pixel electrode 9 located on the upper surface 15 of the interlayer insulating film 8 becomes smaller than the thickness of the ITO pixel electrode 9 located in the contact hole 10. It is thicker than.

FIGS. 11 to 14 are schematic cross-sectional views for explaining a method of manufacturing the liquid crystal display device shown in FIG. A method for manufacturing a liquid crystal display device will be described with reference to FIGS.

First, a thin film transistor 14 (see FIG. 10) is formed on a glass substrate 20 by using the same steps as those shown in FIG. 2 in the first embodiment of the present invention. The passivation film 7 is formed so as to cover the thin film transistor 14. A photosensitive acrylic transparent resin is applied on the passivation film 7. Then, the acrylic transparent resin is exposed and baked to form an interlayer insulating film 8 having a thickness of about 2 μm. A lower ITO film 25 (see FIG. 11) is formed on interlayer insulating film 8. This lower layer I
The thickness of the TO film 25 is about 50 nm. Lower ITO film 2
A resist pattern 21 is formed on 5. Using the resist pattern 21 as a mask, an opening 27 (see FIG. 11) is formed by removing a part of the lower ITO film 25 using wet etching. As an etchant for this wet etching, a hydrochloric acid-nitric acid type etchant is used. Then, part of the interlayer insulating film 8 and the passivation film 7 are partially removed by dry etching using the lower ITO film in which the opening 27 is formed as a mask. The gas used for this dry etching is C
Gases such as F ₄ and O ₂ are used. At the bottom of the formed contact hole 10, the upper surface of the drain electrode 6b is partially exposed. Thus, a structure as shown in FIG. 11 is obtained.

Next, as shown in FIG. 12, the drain electrode 6b exposed at the bottom of the contact hole 10 is formed.
Has a fluorine-based compound formed during the above-mentioned dry etching. In order to remove this fluorine-based compound, oxygen plasma treatment using oxygen plasma 16 is performed. At this time, the side wall of the contact hole 10 is damaged by the oxygen plasma 16 and becomes porous.

Next, the resist 2 was removed using a resist stripper.
Remove one. Then, as shown in FIG. 13, the upper ITO film 26 is changed to the lower ITO film 25 using a sputtering method.
It is formed above and inside the contact hole 10. The thickness of the upper ITO film 26 is about 50 nm. As described above, since the lower ITO film 25 is used as a part of the ITO pixel electrode 9, a step of removing the protective film that has protected the upper surface 15 of the interlayer insulating film 8 as compared with the second embodiment of the present invention. Can be omitted. As a result, the manufacturing process of the liquid crystal display device can be shortened, so that the manufacturing cost of the liquid crystal display device can be reduced.

Next, heat treatment is performed at a temperature of 230 ° C. for a heating time of 60 minutes. A resist pattern (not shown) is formed on upper ITO film 26. Using the resist pattern as a mask, the lower ITO film 25 and the upper ITO film 26 are removed by wet etching to form the ITO pixel electrode 9 including the lower ITO pixel electrode 23 and the upper ITO pixel electrode 24. The conditions for this wet etching are as follows: a hydrochloric acid-nitric acid type etching solution is used as the etching solution, and the etching time is set to 15 hours.
For example, a condition such that the temperature of the etching solution is 50 ° C. for 0 second is used. Thereafter, the structure as shown in FIG. 14 is obtained by removing the resist pattern. In the etching at the time of forming the ITO pixel electrode 9, since the adhesion between the interlayer insulating film 8 and the lower ITO pixel electrode 23 is good, a hydrochloric acid-nitric acid based etching solution is applied to the lower ITO pixel in the region 18. It is possible to prevent penetration into the boundary region between the electrode 23 and the interlayer insulating film 8. As a result, effects similar to those of the first and second embodiments of the present invention can be obtained.

Thereafter, by performing the same steps as in the second embodiment of the present invention, the liquid crystal display device shown in FIG. 10 can be obtained.

(Embodiment 5) Embodiment 5 of the liquid crystal display device according to the present invention basically has the same structure as that of the liquid crystal display device shown in FIG. 1, but the amorphous silicon film shown in FIG. 4 and n ⁺ type amorphous silicon film 5 are made of polysilicon instead of amorphous silicon. TFT using such polysilicon
In the case of an LCD as well, when an ITO pixel electrode as a transparent conductive layer is formed on an interlayer insulating film 8 made of a transparent resin, the method of manufacturing a liquid crystal display device according to the present invention can be applied. Then, an effect similar to that obtained by the liquid crystal display device described in Embodiment 1 of the present invention can be obtained.

Further, in the second to fourth embodiments of the liquid crystal display device according to the present invention, similarly, when polysilicon is used instead of amorphous silicon as a material forming the thin film transistor 14, the same effect can be obtained. .

The embodiments disclosed this time are to be considered in all respects as illustrative and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the embodiments described above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

[0089]

As described above, according to the present invention, it is possible to obtain a semiconductor device or a liquid crystal display device capable of preventing defects from occurring in a transparent conductive layer such as an ITO pixel electrode.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view showing Embodiment 1 of a liquid crystal display device according to the present invention.

FIG. 2 shows a first method of manufacturing the liquid crystal display device shown in FIG.
FIG. 4 is a schematic cross-sectional view for explaining a process.

FIG. 3 shows a second method of manufacturing the liquid crystal display device shown in FIG.
FIG. 4 is a schematic cross-sectional view for explaining a process.

FIG. 4 shows a third method of manufacturing the liquid crystal display device shown in FIG.
FIG. 4 is a schematic cross-sectional view for explaining a process.

FIG. 5 shows a fourth method of manufacturing the liquid crystal display device shown in FIG.
FIG. 4 is a schematic cross-sectional view for explaining a process.

FIG. 6 is a schematic sectional view showing Embodiment 3 of the liquid crystal display device according to the present invention.

FIG. 7 shows a first method of manufacturing the liquid crystal display device shown in FIG.
FIG. 4 is a schematic cross-sectional view for explaining a process.

FIG. 8 shows a second method of manufacturing the liquid crystal display device shown in FIG.
FIG. 4 is a schematic cross-sectional view for explaining a process.

FIG. 9 shows a third method of manufacturing the liquid crystal display device shown in FIG.
FIG. 4 is a schematic cross-sectional view for explaining a process.

FIG. 10 is a fourth embodiment of the liquid crystal display device according to the present invention.
FIG.

11 is a schematic cross-sectional view for explaining a first step of the method for manufacturing the liquid crystal display device shown in FIG.

12 is a schematic cross-sectional view for explaining a second step of the method for manufacturing the liquid crystal display device shown in FIG.

13 is a schematic cross-sectional view for describing a third step in the method for manufacturing the liquid crystal display device shown in FIG.

14 is a schematic cross-sectional view for explaining a fourth step of the method for manufacturing the liquid crystal display device shown in FIG.

FIG. 15 is a schematic cross-sectional view for explaining a first step of a conventional method for manufacturing a liquid crystal display device.

FIG. 16 is a schematic cross-sectional view for explaining a second step of the conventional method for manufacturing a liquid crystal display device.

[Explanation of symbols]

 1, 2, conductive wire, 3 silicon nitride film, 4 amorphous
Silicon film, 5 n ⁺Type amorphous silicon film, 6
a Source electrode, 6b Drain electrode, 7 Passive
Film, 8 interlayer insulating film, 9 ITO pixel electrode, 10
 Contact hole, 11 liquid crystal, 12 upper glass base
Plate, 13 counter electrode, 14 thin film transistor, 15
Upper surface of interlayer insulating film, 16 oxygen plasma, 17 sulfuric acid
Acid solution, 18 areas, 19 conductor film, 20 glass base
Board, 21 resist, 22 opening, 23 lower layer ITO
Pixel electrode, 24 upper layer ITO pixel electrode, 25 lower layer IT
O film, 26 Upper ITO film, 27 Lower ITO film opening
Department.

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Ken Kubota 2-3-2 Marunouchi, Chiyoda-ku, Tokyo Mitsui Electric Co., Ltd. (72) Inventor Masanao Kobayashi 3-5-3 Yamato Suwa City, Nagano Prefecture Seiko -F term in Epson Corporation (reference) 2H092 JA26 JA29 JA33 JA35 JA38 JA42 JA44 JA46 JB13 JB23 JB32 JB33 JB38 JB51 JB57 JB63 JB69 KA05 KA07 KA12 KA16 KA18 KB14 MA05 MA08 MA14 MA15 MA16 MA18 MA19 MA27 QA07 4M104 AA10 BB36 CC01 DD07 DD17 DD20 EE17 EE18 GG09 HH09 5F033 GG04 HH38 JJ38 KK17 MM05 PP15 QQ00 QQ09 QQ19 QQ27 QQ37 QQ92 QQ95 RR06 RR21 SS15 SS22 TT04 VV15 XX14 AFF30 FF14 AFF XX14 5F110 A26 FF14 HL11 HL23 HL26 HM17 HM18 NN04 NN22 NN24 NN35 NN36 NN40

Claims (15)

[Claims] A substrate; a conductive layer formed on the substrate; an interlayer insulating film formed on the conductive layer and having a contact hole formed in a region located on the conductive layer; A transparent conductive layer formed so as to extend from the inside of the hole to above the upper surface of the interlayer insulating film, and electrically connected to the conductive layer, wherein the upper surface of the interlayer insulating film is wet-processed. A semiconductor device that has been smoothed by: 2. A substrate; a conductive layer formed on the substrate; an interlayer insulating film formed on the conductive layer and having a contact hole formed in a region located on the conductive layer; A transparent conductive layer formed so as to extend from the inside of the hole to the upper surface of the interlayer insulating film, and electrically connected to the conductive layer; A semiconductor device including a plasma-treated surface, wherein an upper surface of the interlayer insulating film includes a surface that is relatively smoother than the plasma-treated surface. 3. The transparent conductive layer includes: a lower transparent conductive layer portion formed so as to be in contact with an upper surface of the interlayer insulating film; and an upper transparent portion formed on the lower transparent conductive layer portion. The semiconductor device according to claim 2, comprising a conductive conductive layer portion. 4. A thickness of a portion of the transparent conductive layer formed on an upper surface of the interlayer insulating film is equal to a thickness of a portion of the transparent conductive layer formed inside a contact hole of the interlayer insulating film. 3. The semiconductor device according to claim 2, which is thicker than the film thickness. 5. A substrate, a conductive layer formed on the substrate, an interlayer insulating film formed on the conductive layer and having a contact hole formed in a region located on the conductive layer, and the contact A transparent conductive layer formed so as to extend from the inside of the hole to the upper surface of the interlayer insulating film, and electrically connected to the conductive layer, wherein the transparent conductive layer is A semiconductor device comprising: a lower transparent conductive layer portion formed so as to be in contact with an upper surface of a film; and an upper transparent conductive layer portion formed on the lower transparent conductive layer portion. 6. The semiconductor device according to claim 1, wherein said transparent conductive layer contains tin-added indium oxide. 7. The semiconductor device according to claim 1, wherein said interlayer insulating film includes an organic film. 8. The semiconductor device according to claim 1, wherein said interlayer insulating film contains a transparent resin. 9. The semiconductor device according to claim 1, further comprising a field effect transistor formed on the substrate and including a conductive region, wherein the conductive layer is an electrode electrically connected to the conductive region of the field effect transistor. The semiconductor device according to claim 1. 10. A liquid crystal display device comprising the semiconductor device according to claim 1. 11. A step of forming a conductive layer on a substrate, a step of forming an interlayer insulating film on the conductive layer, and forming a contact hole in the interlayer insulating film in a region located on the conductive layer. Exposing the conductive layer, performing a plasma treatment on the exposed surface of the conductive layer and the upper surface of the interlayer insulating film, and wet-treating the upper layer including the upper surface of the interlayer insulating film. And a step of forming a transparent conductive layer so as to extend from the inside of the contact hole to the upper surface of the wet-processed interlayer insulating film. 12. A step of forming a conductive layer on a substrate; a step of forming an interlayer insulating film on the conductive layer; a step of forming a protective film on an upper surface of the interlayer insulating film; A step of exposing the conductive layer by forming a contact hole by removing a part of the interlayer insulating film and the protective film in a region located above, and in a state where the protective film is formed, Performing a plasma treatment on the exposed surface of the conductive layer; and forming a transparent conductive layer so as to extend from inside the contact hole to an upper surface of the interlayer insulating film. Device manufacturing method. 13. The method according to claim 12, further comprising the step of removing the protective film, wherein the step of forming the transparent conductive layer extends from the inside of the contact hole to the upper surface of the interlayer insulating film from which the protective film has been removed. The method for manufacturing a semiconductor device according to claim 12, wherein the transparent conductive layer is formed to extend. 14. In the step of forming the transparent conductive layer, a transparent conductive layer portion is formed so as to extend from inside the contact hole onto the protective film. The method for manufacturing a semiconductor device according to claim 12, wherein the transparent conductive layer including the conductive conductive layer portion is formed. 15. A method for manufacturing a liquid crystal display device, comprising the method for manufacturing a semiconductor device according to claim 11.