JP2001156045A - 半導体装置の製造方法および製造装置 - Google Patents

半導体装置の製造方法および製造装置

Info

Publication number
JP2001156045A
JP2001156045A JP33626899A JP33626899A JP2001156045A JP 2001156045 A JP2001156045 A JP 2001156045A JP 33626899 A JP33626899 A JP 33626899A JP 33626899 A JP33626899 A JP 33626899A JP 2001156045 A JP2001156045 A JP 2001156045A
Authority
JP
Japan
Prior art keywords
gas
etching
semiconductor device
processing
tank
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP33626899A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001156045A5 (https=
Inventor
Yasutsugu Suzuki
康嗣 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JFE Steel Corp
Original Assignee
Kawasaki Steel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kawasaki Steel Corp filed Critical Kawasaki Steel Corp
Priority to JP33626899A priority Critical patent/JP2001156045A/ja
Priority to US09/714,971 priority patent/US7030027B1/en
Publication of JP2001156045A publication Critical patent/JP2001156045A/ja
Publication of JP2001156045A5 publication Critical patent/JP2001156045A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means

Landscapes

  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP33626899A 1999-11-26 1999-11-26 半導体装置の製造方法および製造装置 Pending JP2001156045A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP33626899A JP2001156045A (ja) 1999-11-26 1999-11-26 半導体装置の製造方法および製造装置
US09/714,971 US7030027B1 (en) 1999-11-26 2000-11-20 Etching methods and apparatus for producing semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33626899A JP2001156045A (ja) 1999-11-26 1999-11-26 半導体装置の製造方法および製造装置

Publications (2)

Publication Number Publication Date
JP2001156045A true JP2001156045A (ja) 2001-06-08
JP2001156045A5 JP2001156045A5 (https=) 2007-01-25

Family

ID=18297365

Family Applications (1)

Application Number Title Priority Date Filing Date
JP33626899A Pending JP2001156045A (ja) 1999-11-26 1999-11-26 半導体装置の製造方法および製造装置

Country Status (2)

Country Link
US (1) US7030027B1 (https=)
JP (1) JP2001156045A (https=)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003071270A (ja) * 2001-08-31 2003-03-11 Ulvac Japan Ltd 真空処理装置
US6740598B2 (en) * 2001-05-18 2004-05-25 Renesas Technology Corp. Wiring layer dry etching method and semiconductor device manufacturing method
JP2007234762A (ja) * 2006-02-28 2007-09-13 Hitachi High-Technologies Corp プラズマエッチング装置及び方法
JP2007265684A (ja) * 2006-03-27 2007-10-11 Toyota Motor Corp ガス流量制御装置、燃料電池システム及びガス流量制御方法
JP2008091651A (ja) * 2006-10-03 2008-04-17 Hitachi High-Technologies Corp プラズマエッチング装置およびプラズマエッチング方法
JP2008205183A (ja) * 2007-02-20 2008-09-04 Hitachi High-Technologies Corp 真空処理装置
JP2008277472A (ja) * 2007-04-27 2008-11-13 Sharp Corp ドライエッチング方法
WO2011021538A1 (ja) * 2009-08-19 2011-02-24 東京エレクトロン株式会社 基板処理装置、演算制御機構、排気バルブおよび圧力制御方法
JP2011166167A (ja) * 2011-05-16 2011-08-25 Hitachi High-Technologies Corp プラズマエッチング装置およびプラズマエッチング方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4740599B2 (ja) * 2005-01-07 2011-08-03 富士通セミコンダクター株式会社 半導体装置の製造方法
WO2008154222A1 (en) * 2007-06-06 2008-12-18 Mks Instruments, Inc. Particle reduction through gas and plasma source control
JP6043046B2 (ja) * 2010-08-12 2016-12-14 東京エレクトロン株式会社 エッチングガスの供給方法及びエッチング装置
US8133349B1 (en) * 2010-11-03 2012-03-13 Lam Research Corporation Rapid and uniform gas switching for a plasma etch process
JP6869765B2 (ja) * 2017-03-23 2021-05-12 株式会社日立ハイテク プラズマ処理装置及びプラズマ処理方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0982687A (ja) * 1995-09-19 1997-03-28 Mitsubishi Electric Corp 半導体装置の製造方法
JPH09199480A (ja) * 1996-01-23 1997-07-31 Sony Corp 接続孔の形成工程を有する半導体装置の製造方法
JPH09251968A (ja) * 1996-03-15 1997-09-22 Toshiba Corp 洗浄機能付き荷電ビーム装置
JPH09312278A (ja) * 1996-05-21 1997-12-02 Hitachi Ltd 半導体製造方法および装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5160407A (en) 1991-01-02 1992-11-03 Applied Materials, Inc. Low pressure anisotropic etch process for tantalum silicide or titanium silicide layer formed over polysilicon layer deposited on silicon oxide layer on semiconductor wafer
US5326727A (en) 1992-12-30 1994-07-05 At&T Bell Laboratories Method for integrated circuit fabrication including linewidth control during etching
US5471094A (en) * 1994-02-24 1995-11-28 Integrated Device Technology, Inc. Self-aligned via structure
US5665203A (en) 1995-04-28 1997-09-09 International Business Machines Corporation Silicon etching method
JP3165047B2 (ja) 1996-12-12 2001-05-14 日本電気株式会社 ポリサイド膜のドライエッチング方法
US5972796A (en) 1996-12-12 1999-10-26 Texas Instruments Incorporated In-situ barc and nitride etch process
US5965461A (en) 1997-08-01 1999-10-12 Advanced Micro Devices, Inc. Controlled linewidth reduction during gate pattern formation using a spin-on barc
US6103632A (en) 1997-10-22 2000-08-15 Applied Material Inc. In situ Etching of inorganic dielectric anti-reflective coating from a substrate
US6136211A (en) 1997-11-12 2000-10-24 Applied Materials, Inc. Self-cleaning etch process
JP2991177B2 (ja) 1997-12-15 1999-12-20 日本電気株式会社 半導体装置の製造方法
US6069091A (en) * 1997-12-29 2000-05-30 Taiwan Semiconductor Manufacturing Company, Ltd. In-situ sequential silicon containing hard mask layer/silicon layer plasma etch method
US6037265A (en) 1998-02-12 2000-03-14 Applied Materials, Inc. Etchant gas and a method for etching transistor gates
US6025273A (en) * 1998-04-06 2000-02-15 Taiwan Semiconductor Manufacturing Company, Ltd. Method for etching reliable small contact holes with improved profiles for semiconductor integrated circuits using a carbon doped hard mask
US6083815A (en) 1998-04-27 2000-07-04 Taiwan Semiconductor Manufacturing Company Method of gate etching with thin gate oxide
US6350696B1 (en) * 2000-09-28 2002-02-26 Advanced Micro Devices, Inc. Spacer etch method for semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0982687A (ja) * 1995-09-19 1997-03-28 Mitsubishi Electric Corp 半導体装置の製造方法
JPH09199480A (ja) * 1996-01-23 1997-07-31 Sony Corp 接続孔の形成工程を有する半導体装置の製造方法
JPH09251968A (ja) * 1996-03-15 1997-09-22 Toshiba Corp 洗浄機能付き荷電ビーム装置
JPH09312278A (ja) * 1996-05-21 1997-12-02 Hitachi Ltd 半導体製造方法および装置

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6740598B2 (en) * 2001-05-18 2004-05-25 Renesas Technology Corp. Wiring layer dry etching method and semiconductor device manufacturing method
JP2003071270A (ja) * 2001-08-31 2003-03-11 Ulvac Japan Ltd 真空処理装置
JP2007234762A (ja) * 2006-02-28 2007-09-13 Hitachi High-Technologies Corp プラズマエッチング装置及び方法
JP2007265684A (ja) * 2006-03-27 2007-10-11 Toyota Motor Corp ガス流量制御装置、燃料電池システム及びガス流量制御方法
JP2008091651A (ja) * 2006-10-03 2008-04-17 Hitachi High-Technologies Corp プラズマエッチング装置およびプラズマエッチング方法
JP2008205183A (ja) * 2007-02-20 2008-09-04 Hitachi High-Technologies Corp 真空処理装置
JP2008277472A (ja) * 2007-04-27 2008-11-13 Sharp Corp ドライエッチング方法
WO2011021538A1 (ja) * 2009-08-19 2011-02-24 東京エレクトロン株式会社 基板処理装置、演算制御機構、排気バルブおよび圧力制御方法
JP2011166167A (ja) * 2011-05-16 2011-08-25 Hitachi High-Technologies Corp プラズマエッチング装置およびプラズマエッチング方法

Also Published As

Publication number Publication date
US7030027B1 (en) 2006-04-18

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