JP2001151863A - Epoxy resin composition for semiconductor sealing use - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain an epoxy resin composition for semiconductor sealing use capable of markedly reducing package voids tending to occur when highly filled with an inorganic filler using a low-viscosity epoxy resin and/or mold stains under continuous molding operation. SOLUTION: This epoxy resin composition comprises an inorganic filler, an epoxy resin having in one molecule at least two epoxy groups, a phenolic resin having in one molecule at least two phenolic hydroxyl groups as curing agent, and as curing promoter, a reaction product of a phosphine-based compound of formula (1) and a phenol novolak compound of formula (2) (n is a positive integer; the phenol novolak compound with n=1 accounts for >=45 mass % of the total, that with n>=3 accounting for <=40 mass %; and the softening point is <=80 deg.C).

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an epoxy resin composition for semiconductor encapsulation used for encapsulating a semiconductor device to form a semiconductor package.

[0002]

2. Description of the Related Art In recent years, the density of semiconductors has been increasing along with the high performance and miniaturization of electronic equipment. However, semiconductor packages have also become thinner and smaller. In addition, the mounting method of the semiconductor package is shifting from the pin insertion type mounting to the surface mounting method. From such a situation, in the encapsulant forming the semiconductor package, a poor filling property of the thin semiconductor package and a failure during surface mounting occur, that is, when the semiconductor package that has absorbed moisture passes through a reflow furnace during soldering. In addition, package cracking due to rapid vaporization and expansion of moisture absorption and interface peeling due to loss of adhesion between the semiconductor element and the sealing material interface have become problems.

In order to solve these problems, studies have been made on lowering the viscosity and lowering the moisture absorption of the encapsulant. In place of the conventional o-cresol novolac epoxy resin, a low-viscosity epoxy resin such as a biphenyl type epoxy resin has been used. In many cases, a sealing material is prepared by using and adding a large amount of an inorganic filler (inorganic filler) to reduce moisture absorption. As described above, the filling property at the time of molding and the solder crack resistance at the time of moisture absorption are significantly improved by lowering the viscosity of the sealing material, that is, by increasing the fluidity and filling of the filler.

[0004]

However, when a low-viscosity epoxy resin is used and an inorganic filler is highly filled as described above, the filling property of the thin-walled portion and the low moisture absorption are both compatible, but the low-moisture content is low. External voids are generated near the gate of the semiconductor package due to air entrapment during molding due to the use of epoxy resin with viscosity, and many pinholes and minute swelling are generated on the surface of the semiconductor package other than the gate part. As a result, a serious drawback that the humidity resistance reliability of the semiconductor package is reduced has arisen.

Further, a low-viscosity epoxy resin is often of a bifunctional type. In this case, the rigidity after molding is lower than that of a conventional o-cresol novolak epoxy resin. At the time of mold release, the cured resin remains in the mold in a microscopic range, and mold contamination during continuous molding is likely to occur.

As described above, various studies have been made to reduce the voids during molding of the semiconductor package and to reduce the contamination of the mold during continuous molding. No way has been found to eliminate it significantly.

The present invention has been made in view of the above points, and greatly reduces package voids and mold contamination during continuous molding that are likely to occur when inorganic fillers are highly filled using a low-viscosity epoxy resin. It is an object of the present invention to provide an epoxy resin for semiconductor encapsulation that can be reduced to a minimum.

[0008]

The epoxy resin composition for semiconductor encapsulation according to claim 1 of the present invention comprises: an inorganic filler;
An epoxy resin having two or more epoxy groups in one molecule, a phenolic resin having two or more phenolic hydroxyl groups in one molecule as a curing agent, and a phosphine represented by the following formula (1) as a curing accelerator: And a reaction product of a phenol novolak compound represented by the formula (2).

[0009]

Embedded image

Further, the epoxy resin composition for encapsulating a semiconductor according to claim 2 of the present invention, in addition to the constitution of claim 1, has a melt viscosity at 150 ° C. of a reaction product of a phosphine compound and a phenol novolak compound of 20 poise. It is characterized by the following and uniform transparent properties.

Further, the epoxy resin composition for semiconductor encapsulation according to claim 3 of the present invention is characterized in that, in addition to the constitution of claim 1 or 2, the composition contains an inorganic filler in an amount of 60% by mass to 95% by mass. Is what you do.

Further, the epoxy resin composition for encapsulating a semiconductor according to claim 4 of the present invention has a biphenyl type epoxy resin represented by the following formula (3) in addition to any one of claims 1 to 3. It is characterized by containing an epoxy resin or a bifunctional epoxy resin represented by the following formula (4).

[0013]

Embedded image

According to a fifth aspect of the present invention, there is provided an epoxy resin composition for semiconductor encapsulation according to any one of the first to fourth aspects, wherein the epoxy resin is a bisphenol A type epoxy resin or a bisphenol F type epoxy resin. It is characterized by containing an epoxy resin or a bisphenol E type epoxy resin.

The epoxy resin composition for encapsulating a semiconductor according to claim 6 of the present invention is characterized in that, in addition to any one of claims 1 to 5, a phenol aralkyl type curing agent is used as a curing agent. It is a feature.

[0016]

Embodiments of the present invention will be described below.

The epoxy resin composition for semiconductor encapsulation of the present invention is used as an encapsulant for a semiconductor package and is prepared by containing an inorganic filler, an epoxy resin, a curing agent and a curing accelerator. is there.

Examples of the inorganic filler used in the present invention include silica powder, alumina powder, aluminum nitride powder, silicon nitride powder, glass powder, and antimony trioxide. These may be used alone or in combination of two or more. it can. Among them, silica powder is particularly preferably used because of its low coefficient of linear expansion, high purity and low cost. More preferably, in order to suppress a decrease in fluidity even when the inorganic filler is highly filled, the inorganic filler preferably includes a spherical shape. The average particle diameter of the inorganic filler powder is preferably 100 μm or less, more preferably 70 μm.
m or less. If the size of the inorganic filler is larger than 100 μm, the inorganic filler is undesirably clogged in a gate portion of a mold or a thin portion of the semiconductor package at the time of molding a semiconductor package, which causes an unsatisfactory filling. The lower limit of the average particle size of the inorganic filler is not particularly set, but those available are about 0.01 μm or more. Further, it is preferable that the inorganic filler is previously treated with a surface treating agent such as a silane coupling agent in order to improve the wettability with the resin component as required.

The epoxy resin used in the present invention is not particularly limited as long as it is an epoxy resin having at least two epoxy groups in one molecule, but those generally used as a sealing material for a semiconductor package are used. Can be used. For example, a novolak-type epoxy resin represented by o-cresol novolak epoxy resin, a dicyclopentadiene-type epoxy resin, a bifunctional biphenyl-type epoxy resin, a bisphenol-type epoxy resin, a naphthalene-type epoxy resin, and the like can be given. These may be used alone or in combination of two or more. Among them, for thin semiconductor packages of surface mount type,
In particular, it is preferable to include the biphenyl type epoxy resin represented by the above formula (3) or the bisphenol type epoxy resin represented by the above formula (4). The bifunctional epoxy resin represented by the formulas (3) and (4) is very effective in reducing the viscosity of the sealing material, and is used for molding a thin semiconductor package.
This is effective for improving the filling property of the sealing material. In addition, as a result of reducing the viscosity of the sealing material, a large amount of inorganic filler can be added, so that the moisture absorption of the sealing material is reduced, and the semiconductor package has excellent solder crack resistance.

The curing agent used in the present invention is not particularly limited as long as it is a phenolic resin having at least two or more phenolic hydroxyl groups in one molecule. Can be used. For example, phenol novolak resin, phenol aralkyl resin, cyclopentadiene, phenol polymer, naphthalene-type phenol resin, bisphenol A, bisphenol F and the like can be mentioned. These may be used alone or in combination of two or more. Among these,
For a thin package of a surface mount type, it is preferable to contain a phenol aralkyl resin for reasons such as low hygroscopicity and high toughness.

The curing accelerator of the present invention comprises at least tetraphenylphosphonium.
Tetraphenyl borate (hereinafter referred to as TPPK);
It is characterized by using a reaction product with a phenol novolak compound (phenol novolak resin) represented by the formula (2).

Conventionally, TPP has been used as a curing accelerator for epoxy resin.
Examples of using K are disclosed in, for example, JP-B-56-45491 and JP-A-61-296019. JP-B-56-45491 discloses a phenol novolak having a weight average molecular weight of 300 to 1500 and TPP.
A method for producing a curing agent for an epoxy resin in which K is heated to a temperature equal to or higher than the softening point of phenol novolak is described. The curability of the epoxy resin is improved and the room temperature stability is improved by using this curing agent. Is disclosed. JP-A-61-296019 describes an epoxy resin composition in which TPPK is used as a curing accelerator and epoxysilane and mercaptosilane are used in combination as a coupling agent. Such an epoxy resin composition is resistant to moisture. It is disclosed that it has excellent properties, adhesion, electrical properties, and thermal stability.

Even if TPPK is used as a curing accelerator based on these publications, for example, JP-B-56-4549
In Patent Document 1, the end point of a heat treatment method is determined based on a color change state in which the color has changed from slightly yellowish brown to brownish brown. Specifically, the heat treatment time depends on the softening temperature of the phenol novolak.
It is described that heating is performed under conditions such as 0 ° C. for 60 minutes and 100 ° C. for 45 minutes. Under these conditions, it is close to a state in which TPK is simply dispersed in phenol novolak, and there is no reduction in package voids and no improvement in mold contamination during continuous molding. Also. Under these heat treatment conditions, the T
There is a disadvantage that the amount of PPK increases and the curing time, that is, the demolding time during molding becomes longer, and the productivity is greatly reduced.

Further, in JP-A-61-296019, the curability is further inferior because only TPPK is added as it is. These presentation examples are originally T
Since PPK has a high melting point and is incompatible with the resin under normal conditions, when it is used as it is as a curing accelerator for an epoxy resin, the activity is very poor as a curing catalyst. Although storage stability is improved, there is no improvement in the subject of the present invention.

The reaction product of TPPK and the specific phenol novolak compound of the present invention is completely different from those disclosed in these publications, and the activity of TPPK is greatly increased as compared with those in the publications described above, and at the time of molding a semiconductor package. This is very effective as a means for greatly reducing the generated package voids and the contamination of the mold during continuous molding. It is apparent from the following facts that this reaction occurs in a point different from that of the above-mentioned publication, that is, the TPPK is reacted instead of being dispersed in the phenol novolak compound. That is, the mass balance before and after the reaction is broken. Specifically, the charged mass is different from the mass after treatment, substances considered to be generated during the reaction, specifically, benzene is confirmed in the generated gas, and the processing conditions are considerably stricter than the above publication. In addition, the fact that the insoluble TPPK was turbid in the phenol novolak compound at the time of the initial preparation, but that the end point was completely uniform and transparent.

Chemically, TPPK and pheno shown in FIG.
The IR spectrum of the mixture of Lunovolak compounds and the figure
Reaction of TPPK with phenol novolak compound shown in 1
From the comparison of the IR spectra of
1232.7 cm due to the phenolic hydroxyl group of the compound^-1
Absorption is 1245.5 cm after the reaction.^-1Has shifted
And the phosphorus-benzene or boron of TPPK
724.9 cm absorption of benzene bonds^-1, 705.1
cm^-1, 688.9cm^-1From 723.7cm ^-1, 68
9.6cm^-1, Some sort of chemical reaction
It can be seen that the film became transparent and uniform after the reaction. Above public
No such change is observed in the processing conditions of the report.

The phenol novolak compound used in the present invention has a structure represented by the formula (2) and has a softening temperature of 80 ° C.
In the following, it is important that those with n = 1 (trinuclear) are 45% by mass or more, and those with n = 3 or more (pentanuclear or more) are 40% by mass or less. A phenol novolak compound having a softening temperature of higher than 80 ° C., or a phenol novolak compound in which n = 1 is less than 45% by mass, or n
When a phenol novolak compound having a ratio of more than 3 is more than 40% by mass, the curing accelerator (reactant) has a very high viscosity, and therefore, has a high softening temperature and an epoxy resin composition (encapsulant). When kneading at the time of the preparation of, there is a possibility that it may not be possible to uniformly mix with other components. still,
The lower the softening temperature of the phenol novolak compound of the present invention is, the more preferable it is. Therefore, the lower limit is not particularly set, but a softening temperature of 50 ° C. is available. In the phenol novolak compound of the present invention, n =
The upper limit is not particularly set because the larger the number, the more preferable the number is 1.
% By mass or less. Furthermore, since the smaller the number of phenol novolak compounds of the present invention is n = 3, the more preferable, the lower limit is not particularly set.

In producing the curing accelerator by reacting TPPK of the formula (1) with the phenol novolak compound of the formula (2), the reaction conditions are 150 ° C. to 200 ° C., preferably 160 ° C. to 190 ° C. Stir the TPPK and the phenol novolak compound until the mixture is homogeneous and clear. This requires 1-2 hours at 180 ° C. The determination of the end point is clear at the beginning of the stirring, but becomes uniform and transparent over time. The melt viscosity of this reaction product (curing accelerator) at 150 ° C. was 2
It is preferably 0 poise or less. 15 of curing accelerator
When the melt viscosity at 0 ° C. exceeds 20 poise, it becomes difficult to uniformly mix with other components in a kneading operation at the time of preparing the epoxy resin composition for semiconductor encapsulation, and as a result, molding failure may occur. . In addition, one of the curing accelerators
Since the lower the melt viscosity at 50 ° C., the better, the lower limit is not particularly set. However, although it is available, the melt viscosity at 150 ° C. is 0.1 poise or more.

In addition, TPPK for producing this reaction product
The mixing ratio of phenol novolak compound and phenol novolak compound is such that TPPK is 5
There is no particular limitation as long as it is 0 parts by mass or less, but preferably,
TP to 100 parts by mass of the phenol novolak compound
PK is 5 to 40 parts by mass. When TPPK is less than 5 parts by mass with respect to 100 parts by mass of the phenol novolak compound, the productivity becomes poor, and when this reactant is used as a master batch of a curing accelerator, the phenol novolak compound is used as a curing agent of a sealing material. When a curing agent other than the above is used, the phenol novolak compound may be unnecessarily mixed into the epoxy resin composition for semiconductor encapsulation. On the other hand, when TPPK exceeds 40 parts by mass with respect to 100 parts by mass of the phenol novolak compound, the softening temperature of the reactant increases significantly, and at the same time, the melt viscosity increases, so that kneading at the time of preparing the epoxy resin composition for semiconductor encapsulation is performed. In the operation, it becomes difficult to uniformly mix with other components, and as a result, molding failure may occur. Then, in the curing accelerator, which is a reactant, TPPK is present in the phenol novolak compound in a form in which a part or all thereof is changed to some form.

The reaction product of TPPK and phenol novolak compound formed under the above conditions is subjected to the conventional treatment, that is, TP
Compared to the case where PK and phenol novolak compound are used in a non-uniform state, the same activity is obtained in about one-half amount as a curing accelerator, package voids can be significantly reduced, and micro curing failure during continuous molding There are such advantages that the generated mold dirt can be largely eliminated.

The curing accelerator for the above-mentioned reactant may be used alone, or another commonly used curing accelerator may be used in combination. Other common curing accelerators include 1,
8 diazabicyclo (5,4,0) -undecene-7,
Cyclic amines such as 1,5-diazabicyclo (4,3,0) -nonene-5, imidazoles such as 2-methylimidazole, 2-phenylimidazole and 2-ethyl-4-methylimidazole, triphenylphosphine and the like Organic phosphines.

The epoxy resin composition for semiconductor encapsulation (encapsulant) of the present invention is obtained by mixing the above components with powder, kneading by heating with a hot roll or a kneading machine, and then cooling and pulverizing. Can be prepared. During the heating and kneading, the heating temperature is 60 to 150 ° C. and the time is 1 to 15 minutes.

The amount of the curing agent is preferably from 0.3 mol to 2. mol of phenolic hydroxyl group per mol of epoxy resin.
0 mol, more preferably 0.7 to 1.4 mol. When the amount is less than 0.3 mol or more than 2.0 mol, it may take a long time to cure the epoxy resin composition for semiconductor encapsulation or may result in poor curing. Adverse effect on the mechanical strength, moisture absorption, and adhesion of the semiconductor package after curing
Is more likely to occur.

The amount of the curing accelerator composed of a reaction product of the reaction of TPPK of the formula (1) with the phenol novolak compound of the formula (2) is based on 100 parts by mass of the total amount of the epoxy resin and the curing agent. It is preferable that TPPK is set to be 0.5 to 7.0 parts by mass. If the compounding amount of the curing accelerator is less than 0.5 parts by mass, sufficient activity as a curing accelerator cannot be obtained, and the gel time of the epoxy resin composition for semiconductor encapsulation becomes longer, resulting in an increase in productivity during molding. There is a risk of adverse effects (decrease). On the other hand, if the amount of the curing accelerator is more than 7.0 parts by mass, the curing may be too fast or the moisture resistance reliability of the molded package may be significantly reduced, which is not preferable.

The amount of the inorganic filler is not particularly limited, but is usually preferably set to 60 to 95% by mass of the total amount of the epoxy resin composition for semiconductor encapsulation. If the compounding amount of the inorganic filler is less than 60% by mass, the reliability of the semiconductor package may decrease due to an increase in the amount of moisture absorption of the sealing material and an increase in the coefficient of linear expansion.
Further, when the compounding amount of the inorganic filler is more than 95% by mass,
The fluidity at the time of molding is greatly reduced, and a package void or a wire sweep is generated. In this case, the reliability of the package may be reduced.

In the present invention, various additives can be used as needed. For example, a low-stress material such as silicone oil, silicone rubber, silicone gel, butadiene, and acrylonitrile copolymer for reducing elasticity can be used. Carnauba wax, montanic acid-type wax, amide-based wax, and polyethylene-based wax can be used to improve the releasability at the time of molding. In addition, carbon black and other coloring agents can be added within a range that does not adversely affect the curability and the moisture resistance reliability. In addition, an adhesion-imparting agent, an ion trapping agent, and a flame-retardant-imparting agent such as a Br-epoxy resin or antimony trioxide may be added as necessary.

The epoxy resin composition for semiconductor encapsulation of the present invention is used as a sealing material for encapsulating a semiconductor element by transfer molding or the like. Conditions for the transfer molding include, for example, a temperature of 150 to 200 ° C. and a pressure of 3
Conventional transfer molding conditions using an epoxy resin composition as a sealing material, such as ２０20 Pa and a curing time of 40 to 200 seconds, can be employed as they are.

[0038]

EXAMPLES Specific examples and comparative examples of the present invention will be shown below, but the present invention is not limited to the following examples.

(Production of curing accelerator) TP represented by the formula (1)
PK was reacted with the phenol novolak compound represented by the formula (2), and this reaction product (TPPK-A) was used as a curing accelerator.

The method for producing the curing accelerator is as follows: 25 g of TPPK (manufactured by Hokuko Chemical Co., Ltd.), the content of trinuclear (n = 1) is 69.7 mass%, and pentanuclear or more (n = 3 75 g of a phenol novolak compound (phenol novolak resin) having a content of 4.6% by mass and a softening temperature of 63 ° C.
Are put into a 500 ml stainless steel beaker, and heated and melted at a temperature of 170 to 180 ° C. under a nitrogen atmosphere, followed by stirring.
At the beginning of the reaction, the whole was cloudy with TPPK dispersed in the phenol novolak compound, but gradually reacted, and after about 2 hours, became a yellow or brown homogeneous transparent melt.
At this time, the melt was cooled and pulverized to obtain a reaction product of TPPK and a phenol novolak compound (TPPK-A). The melt viscosity of the reaction product at 150 ° C. was 4.0 poise.

(Examples 1 to 6 and Comparative Examples 1 to 6) The components shown in Table 1 were mixed in the proportions shown in the same table, and kneaded using a heating roll at a temperature of 85 ° C. for about 5 minutes. Thereafter, the resultant was pulverized to about 5 mmφ to prepare an epoxy resin composition for semiconductor encapsulation.

The following components were used as the components shown in Table 1. o-Cresol novolak epoxy resin: "ESCN195LX4" manufactured by Sumitomo Chemical Co., Ltd. Biphenyl type epoxy resin: "Y" manufactured by Yuka Shell Co., Ltd.
X4000H "of formula (3) Tetramethylbisphenol F type epoxy resin:" ESLV-80XY "manufactured by Nippon Steel Chemical Co., Ltd. Formula (4) Bisphenol A type epoxy resin: manufactured by Yuka Shell Co., Ltd. "Epicoat 828" Bisphenol F type epoxy resin: "YDF8170" manufactured by Toto Kasei Co., Ltd. Brominated bisphenol type epoxy resin: Sumitomo Chemical Co., Ltd.
“ESB400T” manufactured by Phenol Novolak resin: “Tamanol 752” manufactured by Gunei Chemical Co., Ltd. Phenol aralkyl resin: “HE100-15” manufactured by Sumikin Chemical Co. The surface treated by spraying sidoxypropyltrimethoxylan was used.

Then, the epoxy resin compositions for semiconductor encapsulation obtained in Examples 1 to 6 and Comparative Examples 1 to 6 were molded at 170 to 175 ° C. for 90 seconds using a transfer molding machine, and were then molded at 175 ° C. for 6 hours. The sample was held and cured to obtain the following evaluation sample (semiconductor package).

Various properties of the evaluation sample were measured and evaluated by the following methods. (1) Package void A semiconductor element having a thickness of 9.6 × 9.6 × 0.4 mm is mounted on a copper alloy frame with silver paste, and has an outer dimension of 28 × 28.
A × 3.2 mm thick 160-pin QFP package was molded with a transfer-type IC molding machine to obtain semiconductor packages for evaluation (10 in each example and each comparative example). In this semiconductor package, a surface void having a diameter of 0.3 mm or more is visually observed using a magnifying glass, and an internal void having a diameter of 0.3 mm or more is observed using an ultrasonic probe. The number of semiconductor packages having voids or internal voids was evaluated. (2) Continuous moldability The semiconductor package of (1) was continuously molded, and the number of molding shots until clouding of the mold or blurring or dirt on the surface of the semiconductor package was evaluated.

Further, in addition to (1) and (2), Examples 1 to 6
The spiral flow and the gel time at 175 ° C. were measured as the moldability of Comparative Examples 1 to 6. Table 1 shows the results
Shown in

[0046]

[Table 1]

As is clear from Table 1, Examples 1 to 6 in which TPPK-A was used as a curing accelerator had less package voids than Comparative Examples 1 to 6 in which TPPK was used as a curing accelerator. In addition, the continuous formability was improved.

[0048]

As described above, the invention of claim 1 of the present invention comprises an inorganic filler, an epoxy resin having two or more epoxy groups in one molecule, and an epoxy resin having two or more in one molecule as a curing agent. Since it contains a phenolic resin having a phenolic hydroxyl group, and a phosphine-based compound represented by the above formula (1) and a phenol novolak compound represented by the formula (2) as a curing accelerator, a low-viscosity epoxy resin is used. The present invention can significantly reduce package voids which are likely to be generated when the inorganic filler is used at a high filling rate and dirt on a mold during continuous molding.

Further, the invention of claim 2 of the present invention relates to a reaction product of a phosphine compound and a phenol novolak compound.
Since the melt viscosity at 50 ° C. is 20 poise or less and the properties are uniform and transparent, it can be uniformly mixed with other components in the kneading operation at the time of preparation, so that molding defects such as poor filling do not occur. Can be done.

According to the third aspect of the present invention, since the inorganic filler is contained in an amount of 60% by mass to 95% by mass, the amount of moisture absorption and the coefficient of linear expansion of the sealing material can be prevented from increasing, and at the same time, molding can be performed. It is possible to prevent the fluidity at the time from being lowered, and to prevent the occurrence of a package void or a wire sweep so that the reliability of the package is not lowered.

Further, according to the invention of claim 4 of the present invention, since the epoxy resin contains the biphenyl type epoxy resin represented by the above formula (3) or the bifunctional epoxy resin represented by the following formula (4), When molding a semiconductor package, as a result of reducing the viscosity, a large amount of inorganic filler can be added, so that the moisture absorption rate of the sealing material is reduced, and a semiconductor package excellent in solder crack resistance can be formed. It is.

Further, according to the invention of claim 5 of the present invention, the epoxy resin is a bisphenol A type epoxy resin, a bisphenol F type epoxy resin, or a bisphenol E type epoxy resin.
Including a mold epoxy resin, when molding a thin semiconductor package, as a result of reducing the viscosity, it is possible to mix a large amount of inorganic fillers, the moisture absorption rate of the sealing material is reduced, and the solder crack resistance is excellent. A semiconductor package can be formed.

In the invention of claim 6 of the present invention, since a phenol aralkyl type curing agent is used as a curing agent,
It is possible to form a semiconductor package having low moisture absorption, a low moisture absorption of the sealing material, and excellent solder crack resistance.

[Brief description of the drawings]

FIG. 1 is a graph showing an IR spectrum of a reaction product of TPPK and a phenol novolak compound.

FIG. 2 is a graph showing an IR spectrum of a mixture of TPPK and a phenol novolak compound.

Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat II (Reference) H01L 23/31 (72) Inventor Takayuki Tsuji 1048 Odakadoma, Kadoma City, Osaka Prefecture Matsushita Electric Works F-term (Reference) 4J002 CC04X CC27X CD05W CD12W DE128 DE148 DF018 DJ008 DJ018 DL008 EJ016 EJ046 EW017 FD018 FD14X FD146 FD157 GQ05 4J036 AD08 DA05 DB10 DD07 FA01 FA02 FA05 FA06 FB07 JA07 4M109 AA01 BA01 CA21 EA03 EB03 EB12

Claims (6)

[Claims] 1. An inorganic filler, an epoxy resin having two or more epoxy groups in one molecule, a phenolic resin having two or more phenolic hydroxyl groups in one molecule as a curing agent, and a curing accelerator An epoxy resin composition for semiconductor encapsulation, comprising a phosphine compound represented by the following formula (1) and a reaction product of a phenol novolak compound represented by the following formula (2). Embedded image 2. The epoxy resin composition for semiconductor encapsulation according to claim 1, wherein the reaction product of the phosphine compound and the phenol novolak compound has a melt viscosity at 150 ° C. of 20 poise or less and is uniformly transparent. object. 3. An inorganic filler of 60% to 95% by mass.
The epoxy resin composition for semiconductor encapsulation according to claim 1, further comprising: 4. The epoxy resin according to claim 1, wherein the epoxy resin contains a biphenyl type epoxy resin represented by the following formula (3) or a bifunctional epoxy resin represented by the following formula (4). The epoxy resin composition for semiconductor encapsulation according to the above. Embedded image 5. The epoxy for semiconductor encapsulation according to claim 1, wherein the epoxy resin comprises a bisphenol A type epoxy resin, a bisphenol F type epoxy resin, or a bisphenol E type epoxy resin. Resin composition. 6. The epoxy resin composition for semiconductor encapsulation according to claim 1, wherein a phenol aralkyl type curing agent is used as the curing agent.