JP2001133758A - Rear side plate for plasma addressed liquid crystal panel and its manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a plasma address liquid crystal panel structure in which transparent rids are erected vertically to a glass substrate and the side faces of the transparent ribs are smoothly formed, and its manufacturing method. SOLUTION: In the plasma address liquid crystal panel in which anode electrodes, cathode electrodes and ribs are provided on the rear side glass substrate and a thin glass plate is sealed opposite to it, the rear side plate of the plasma addressed liquid crystal panel is provided which is characterized by having the transparent ribs and a transparent dielectric layer formed of the same material and by having the anode and cathode electrodes formed on the transparent dielectrics layer.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma addressed liquid crystal panel which is an image display device utilizing gas discharge and a method of manufacturing the same.

[0002]

2. Description of the Related Art In recent years, large displays have become widespread as image display devices in the world. However, conventional CRTs have become heavy with the increase in size of cathode ray tubes.
On the other hand, a 25-inch plasma-addressed liquid crystal is commercially available as a thin and large-screen display, and a 42-inch plasma-addressed liquid crystal has been announced at an exhibition or the like. ”, Monthly FPD Intelligence, vo
l. 6 (1998) pp. 79-83 etc.

[0003] The above-mentioned plasma addressed liquid crystal panel which has been put into practical use has been adapted to mass production and a large screen by adopting a process mainly based on a thick film printing method as described in JP-A-4-265931. It is suitable.

FIGS. 1 and 2 show an example of the configuration of this conventional plasma addressed liquid crystal panel. After forming an anode electrode and a cathode electrode on the plasma substrate, ribs are formed, sealing is performed using a dielectric thin glass by a frit glass seal, and a discharge gas is sealed after evacuation. After forming R, G, B CF layers and black stripes on the CF substrate, signal electrodes are formed. This plasma substrate and CF
The attached glass substrates are stuck together with a spacer in between, and liquid crystal is injected. Finally, a polarizing plate and a backlight are arranged to complete a plasma addressed liquid crystal panel.

Here, the structure and manufacturing method of a conventional plasma substrate related to the present invention will be described in more detail with reference to the panel structure of FIG. In a 42-inch plasma addressed liquid crystal panel, the pitch of the ribs was 1.092 mm.
It has become.

A low expansion coefficient glass substrate having an exhaust pipe connection hole is washed and dried. Next, a Ni electrode paste is applied in a solid manner by a screen printing method and dried to provide a 50 μm Ni electrode layer. Here, the Ni electrode paste is mainly made of metallic Ni.
It is composed of powder and low melting point glass, an antioxidant, a binder resin having good thermal decomposability (such as ethyl cellulose), and a solvent (such as butyl carbitol acetate or α-terpineol) for imparting rheological properties suitable for screen printing. Subsequently, after attaching a dry film film (DF), exposing and developing and patterning, unnecessary portions of the Ni electrode material are removed by sandblasting, and the DF is peeled off. As a result, a striped Ni electrode pattern corresponding to the anode and the cathode in the discharge space is completed. Further, since vacuum sealing is difficult with Ni electrodes, an Ag electrode paste is formed by a screen printing method for the sealing portion and the terminal electrode portion. A cover glass paste is applied by screen printing in order to prevent abnormal discharge at the end of the plasma channel.

Then, a paste for ribs to be the walls of the plasma cell is applied and dried a plurality of times by a screen printing method.
Laminate to about 50 μm and bake. Here, the rib paste is a low-melting glass, a binder resin having good thermal decomposability (such as ethyl cellulose), a solvent (such as butyl carbitol acetate or α-terpineol) for imparting rheological properties suitable for screen printing, and a black pigment. As a main component. The reason for containing the black pigment in the paste for ribs is to prevent the reflection of light on the side surfaces of the ribs as described later by making the ribs after firing black. Finally, the top of the rib is polished to make the height of the rib uniform within ± 2 μm at 200 μm and to smooth the upper end surface. Wash thoroughly so that no polishing residue remains. The thickness of the Ni electrode after the rib firing is about 40 μm and the width is about 100 μm. The resistance is about 500Ω at a discharge part of about 1000 mm.

Since the Ni electrode is not a pure metal but in a glass cermet state with a low melting point glass frit, the resistivity after firing is at least 20 times that of metallic Ni. For this reason, the width of the electrode cannot be reduced, and the thickness cannot be reduced. Since the width of the electrode cannot be reduced, the aperture ratio cannot be reduced, and the efficiency of using light from the backlight deteriorates. Further, when the rib interval is 0.485 mm pitch as in the 42 "HDTV specification, the aperture ratio becomes 40% or less, which is a fatal defect.

Further, since the Ni electrode material has a thickness of about 40 μm after firing, it is difficult to uniformly laminate the DF on this substrate. Therefore, there is a disadvantage that it is difficult to use a paste embedding method in which the height and the shape of the rib top can be easily controlled by the thickness of the DF.

The rib formation by the sand blast method, which has been proven in mass production as a rib formation method for an AC plasma display panel (PDP), is such that the electrodes of the PDP are covered with a dielectric layer, and the ribs are damaged by sand blasting when the ribs are formed. However, in the case of PALC, since the electrodes are exposed and damaged by sandblasting, the method is not implemented because it is not a very appropriate method.

As described above, ribs must be formed by a screen printing method having a problem in dimensional accuracy. 42 "V
If the rib interval is 1.092 mm pitch as in the GA specification, it is possible to form a rib between the electrodes with a margin, but if the rib interval is 0.485 mm pitch as in the 42 "HDTV specification, ± 1 positioning accuracy
Since it is required to be within 0 μm, it is a fatal disadvantage.

In the conventional structure, a black rib is formed as described above. This is to suppress the influence of a decrease in contrast caused by stray light due to reflection on the side surface of the rib. As a result, there is a fatal disadvantage that the aperture ratio is limited by being shielded from light by the black ribs and the backlight use efficiency is not improved. Further, there is a problem in that the viewing angle is restricted in the direction perpendicular to the black ribs, that is, even if a liquid crystal in a wide viewing angle mode is applied due to the so-called louver effect, the advantage cannot be fully utilized. To overcome this problem, Japanese Patent Application Laid-Open No. H11-212068 proposes a novel structure of a plasma addressed liquid crystal panel in which the following measures are taken.

A transparent rib is formed instead of the above-mentioned black rib. This can prevent a narrow viewing angle due to the louver effect. At this time, by using a material having less surface irregularities for the transparent rib, it is possible to suppress a decrease in contrast due to light scattering. Further, the polarizing plate on the rear glass substrate side is arranged so that the transmission axis direction is 0 ° or 90 ° with respect to the transparent rib forming direction, and the polarizing plate on the front glass substrate side is positioned such that the transmission axis direction is the rear surface. Arranged so as to be orthogonal to the transmission axis direction of the polarizing plate on the glass substrate side, and by making the transparent rib stand perpendicular to the rear glass substrate, the polarization plane rotation of light when transmitting the transparent rib is reduced. Can be prevented. As a result, the use of the transparent ribs makes it possible to produce a panel having a high backlight utilization efficiency and a wide viewing angle without lowering the contrast as compared with the conventional black rib panel.

However, the method of manufacturing a rear glass substrate according to the present invention is no different from the above-described conventional method of manufacturing a rib substrate for a plasma addressed liquid crystal by a thick film printing method. It is just a replacement for glass paste. Therefore, it has a fatal defect in the manufacturing method as described above. In addition, as is apparent from the plasma display manufacturing technology, in the formation of ribs by repeating the current thick film printing method, no matter how the rheological characteristics of the rib paste are controlled, it is necessary to control the rheological properties of the rib paste with respect to the glass substrate.
It is not realistic to set the ribs vertically at a height of μm even at the laboratory level, and it is impossible to evenly set the vertical ribs at a height of 250 μm on a 42-inch glass substrate. Also, it is difficult to take measures against side steps due to the repeated printing method.

[0015]

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems, and a transparent rib can be set perpendicular to a glass substrate, and a side surface of the transparent rib can be provided. It is an object of the present invention to provide a plasma-addressed liquid crystal panel structure capable of forming a liquid crystal panel smoothly and a method of manufacturing the same.

Further, in the formation of the cathode electrode and the anode electrode, an electrode structure and a method of manufacturing the electrode structure, which have a small pattern width and a sufficiently low resistivity even if the electrode width is small so that the aperture ratio can be improved with good pattern accuracy. The task is to provide.

[0017]

According to the present invention, an anode electrode, a cathode electrode,
A plasma characterized in that a transparent rib and a transparent dielectric layer are formed of the same material on a back plate of a plasma-addressed liquid crystal panel provided with ribs, and an anode electrode and a cathode electrode are formed on the transparent dielectric layer. This is the back panel of the address liquid crystal panel.

The invention according to claim 2 is the back plate of the plasma addressed liquid crystal panel according to claim 1, wherein the thickness of the transparent dielectric is 3 to 15 μm.

The plasma address according to any one of claims 1 and 2, wherein the angle formed between the side surface of the transparent rib and the rear glass substrate is 85 to 95 degrees. This is the back panel of the liquid crystal panel.

According to a fourth aspect of the present invention, there is provided a plasma addressed liquid crystal panel according to any one of the first to third aspects, wherein the surface roughness of the side face of the transparent rib is substantially an optical plane within 1 μm. It is a back plate.

According to a fifth aspect of the present invention, the anode and the cathode formed on the transparent dielectric layer are made of the same material. This is the back panel of the liquid crystal panel.

According to a sixth aspect of the present invention, in the plasma addressed liquid crystal panel according to any one of the first to fifth aspects, the electrode material is formed of a thick film or plating containing 80% or more of Ni. It is a back plate.

The invention according to claim 7 is the plasma addressed liquid crystal panel according to any one of claims 1 to 5, wherein the same material is formed of a thick film or a vapor-deposited film containing 80% or more of Al. It is a back plate.

[0024] The invention according to claim 8 is characterized in that, among the anode electrode and the cathode electrode formed on the transparent dielectric layer,
5. The back plate of the plasma addressed liquid crystal panel according to claim 1, wherein at least the cathode electrode has a two-layer structure.

According to a ninth aspect of the present invention, an anode electrode and a cathode electrode are formed as base electrodes of the same material having photosensitivity, and at least the cathode electrode is made of Ni which has a sputter resistance to discharge gas cations. 9. The back plate of the plasma addressed liquid crystal panel according to claim 1, wherein a protective plating containing at least 10% is applied.

According to a tenth aspect of the present invention, in the plasma addressed liquid crystal panel according to any one of the first to fourth or eighth or ninth aspects, the base electrode is formed using a photosensitive Ag paste. It is a back plate.

The eleventh aspect of the present invention relates to the first to first aspects.
0. A method of manufacturing a back plate of a plasma addressed liquid crystal panel according to any one of the above, wherein a predetermined amount of a paste-like rib-forming material is applied on a glass substrate, and pressed by a rib-forming intaglio to form a rib pattern. After that, the organic components are burned off by heating at a high temperature, and simultaneously, the transparent ribs and the transparent dielectric layer are formed by sintering the glass frit, and then the cathode electrode and the anode electrode are formed. This is a method for manufacturing a back plate of a plasma addressed liquid crystal panel.

The twelfth aspect of the present invention relates to the first to first aspects.
0. A method of manufacturing a back plate of a plasma addressed liquid crystal panel according to any one of the above, wherein a predetermined amount of a paste-like rib-forming material is embedded in a rib-forming intaglio, and the material is retained on a glass substrate while maintaining its shape. After the transfer, the organic component is burned off by heating at a high temperature, and at the same time, after forming the transparent ribs and the transparent dielectric layer by sintering the glass frit, a cathode electrode and an anode electrode are formed. A method of manufacturing a back plate of a plasma addressed liquid crystal panel.

[0029] The invention according to claim 13 is the invention according to claim 11,
13. The method for manufacturing a back plate of a plasma addressed liquid crystal panel according to claim 12, wherein the method for forming an anode electrode and a cathode electrode according to claim 5 is an electroless plating method. This is a method for manufacturing a back plate of a panel.

[0030] The invention according to claim 14 is the invention according to claim 11,
12. The method of manufacturing a back plate of a plasma addressed liquid crystal panel according to claim 12, wherein the method of forming an anode electrode and a cathode electrode according to claim 5 comprises: applying a thick film paste; A method for manufacturing a back plate of a plasma addressed liquid crystal panel, comprising firing after forming an electrode pattern by sandblasting.

[0031] The invention according to claim 15 is the invention according to claim 11,
13. The method for manufacturing a back plate of a plasma addressed liquid crystal panel according to claim 12, wherein the method for forming an anode electrode and a cathode electrode according to claim 5 is a photosensitive paste method. This is a method for manufacturing a back plate of a panel.

[0032] The invention according to claim 16 is the invention according to claim 11,
12. The method of manufacturing a back plate of a plasma addressed liquid crystal panel according to claim 12, wherein the method of forming an anode electrode and a cathode electrode according to claim 5 is a vapor deposition method. This is a method of manufacturing a back plate.

The invention described in claim 17 is based on claim 11,
13. The method for manufacturing a back plate of a plasma addressed liquid crystal panel according to claim 12, wherein the method for forming a base electrode of an anode electrode and a cathode electrode according to claim 8 is the method according to claims 13 to 16. And a method of manufacturing a back plate of a plasma addressed liquid crystal panel, wherein a protective plating layer is provided by performing electrolytic plating with a material having resistance to plasma cation sputter.

[0034]

DESCRIPTION OF THE PREFERRED EMBODIMENTS In order to solve the above-mentioned problems, according to the present invention, first, an anode electrode, a cathode electrode and a rib are provided on a rear glass substrate, and a thin glass is sealed in opposition to the anode electrode, the cathode electrode and the rib. In the plasma addressed liquid crystal panel stopped, a transparent rib and a transparent dielectric layer are formed of the same material, and an anode electrode and a cathode electrode are formed on the transparent dielectric layer. It is a face plate. FIGS. 4 and 5 are cross-sectional views of the rear glass substrate illustrating the present invention.
Is given as an example.

Further, in the invention of claim 2, the transparent dielectric film thickness is 3 to 15 μm.
In the back plate of the plasma addressed liquid crystal panel.

According to the third aspect of the present invention, the angle between the side surface of the transparent rib and the back glass substrate is 85 to 95 degrees. It is a back plate of a liquid crystal panel. At angles other than 85 to 95 degrees, the plane of polarization rotates,
It is not good because the contrast decreases.

The plasma addressed liquid crystal panel according to any one of claims 1 to 3, wherein the surface roughness of the side face of the transparent rib is substantially an optical plane within 1 μm. Back plate. When the surface roughness is within 1 μm, scattered light is suppressed and transmitted light and reflected light are effectively used.
If m or more, scattering on the surface increases, the polarization plane is disturbed, and the contrast is lowered, which is not good.

In the invention according to claim 5, the anode electrode and the cathode electrode formed on the transparent dielectric layer are made of the same material. It is a back plate of a liquid crystal panel. FIG. 4 is an example of a cross-sectional view of the rear glass substrate of the present invention. If the anode electrode and the cathode electrode are made of the same material, the manufacturing process can be simplified.

In the invention of claim 6, the same material has a sputter resistance to discharge gas cations.
6. A back plate of a plasma addressed liquid crystal panel according to claim 1, wherein the back plate is made of a thick film or plating containing 80% or more of i. When Ni is contained in an amount of 80% or more, it is good in terms of spatter resistance. However, in the case of 80% or less, the spatter resistance is reduced, the resistivity is increased, the surface is not uniform, and the discharge is not uniform. Not good.

Further, in the invention of claim 7, the same material has a sputtering resistance to discharge gas cations.
6. A back plate of a plasma addressed liquid crystal panel according to any one of claims 1 to 5, comprising a thick film or a vapor-deposited film containing 80% or more of l. When Al is contained in an amount of 80% or more, it is good in terms of spatter resistance. However, in the case of 80% or less, the spatter resistance is reduced, the resistivity is increased, the surface is not uniform, and the discharge is not uniform. Not good.

Further, in the invention of claim 8, at least the cathode electrode of the anode electrode and the cathode electrode formed on the transparent dielectric layer has a two-layer structure. A back plate of any of the plasma addressed liquid crystal panels described above. FIG. 5 is an example of a cross-sectional view of the rear glass substrate of the present invention. By using a material having low resistance for the first layer and using a material having sputter resistance for the second layer, the overall resistance value can be reduced, and as a result, the electrodes can be made thinner and the aperture ratio can be increased.

According to the ninth aspect of the present invention, the anode electrode and the cathode electrode are formed of the same material having photosensitivity as a base electrode, and at least the cathode electrode contains Ni, which has sputter resistance to discharge gas cations. %
The back plate of the plasma addressed liquid crystal panel according to any one of claims 1 to 4, wherein a protective plating containing the above is applied.

The plasma addressed liquid crystal panel according to any one of claims 1 to 4, or 8 or 9, wherein said base electrode is formed using a photosensitive Ag paste. Back plate.
Since photosensitive Ag paste is used in large quantities in the production of PDPs, it has a cost advantage, and the process is well established and easy to handle.

According to the eleventh aspect of the present invention, in the first aspect,
10. The method for manufacturing a back plate of a plasma addressed liquid crystal panel according to any one of 10 above, wherein a predetermined amount of a paste-like rib forming material is applied on a glass substrate, and a rib pattern is formed by pressing with a rib forming intaglio. After that, the organic components are burned off by heating at a high temperature, and simultaneously, the transparent ribs and the transparent dielectric layer are formed by sintering the glass frit, and then the cathode electrode and the anode electrode are formed. This is a method of manufacturing a back plate of a plasma addressed liquid crystal panel.

According to the twelfth aspect of the present invention, the first to fifth aspects of the present invention are described below.
10. A method of manufacturing a back plate of a plasma addressed liquid crystal panel according to any one of 10 to 10, wherein a predetermined amount of a paste-like rib-forming material is embedded in a rib-forming intaglio, and the material is retained on a glass substrate while maintaining its shape. After the transfer, the organic component is burned off by heating at a high temperature, and at the same time, after forming the transparent ribs and the transparent dielectric layer by sintering the glass frit, a cathode electrode and an anode electrode are formed. A method of manufacturing a back plate of a plasma addressed liquid crystal panel.

According to the thirteenth aspect of the present invention, the first aspect
The method for manufacturing a back plate of a plasma addressed liquid crystal panel according to any one of claims 1 and 12, wherein the method for forming an anode electrode and a cathode electrode according to claim 5 is an electroless plating method. This is a method for manufacturing a back plate of an address liquid crystal panel.

According to the fourteenth aspect of the present invention, the first aspect
13. The method for manufacturing a back plate of a plasma addressed liquid crystal panel according to any one of claims 1 and 12, wherein the method for forming an anode electrode and a cathode electrode according to claim 5 comprises patterning after applying a thick film paste and applying a liquid photoresist. Thereafter, firing is performed after forming an electrode pattern by sandblasting, and a method of manufacturing a back plate of a plasma addressed liquid crystal panel is provided.

According to the fifteenth aspect, in the first aspect,
The method for manufacturing a back plate of a plasma addressed liquid crystal panel according to any one of claims 1 and 12, wherein the method for forming an anode electrode and a cathode electrode according to claim 5 is a photosensitive paste method. This is a method for manufacturing a back plate of an address liquid crystal panel.

According to the sixteenth aspect of the present invention, the first aspect
13. The method of manufacturing a back plate of a plasma addressed liquid crystal panel according to claim 1, wherein the method of forming an anode electrode and a cathode electrode according to claim 5 is a vapor deposition method. This is a method for manufacturing a back plate of a panel.

According to the seventeenth aspect of the present invention, the first aspect is provided.
The method for manufacturing a back plate of a plasma addressed liquid crystal panel according to any one of claims 1 and 12, wherein the method for forming a base electrode of an anode electrode and a cathode electrode according to claim 8 is the method according to claims 13 to 16. And a method for manufacturing a back plate of a plasma addressed liquid crystal panel, wherein electrolytic plating is performed as a material having a resistance to plasma cation spattering.

In the method of manufacturing the back plate of the plasma addressed liquid crystal panel, the formation of the glass paste for preventing abnormal discharge at both ends of the plasma cell may be performed at any time after the formation of the electrode pattern. When a thick film paste is used for the electrode, the firing of the glass paste is performed at the same time, thereby reducing the number of firings, leading to a cost reduction. Also, when using a thick film paste for the electrode, forming the ribs before firing and simultaneously firing the ribs reduces the number of firings as described above, leading to cost reduction. However, the ribs before firing are mechanically fragile and require careful handling.Therefore, forming the electrodes after firing the ribs may lower the total cost in consideration of the yield. It is desirable that the process be selected upon judgment.

In consideration of the current driving voltage pulse of the panel, the discharge current, and the type of discharge gas, the electrode material is made of Ni, Al, or boride, which is resistant to cation sputtering during plasma switching. Although a material such as lanthanum is desirable, if it becomes possible to reduce the intensity and frequency of the sputtering by controlling the driving method in the future, metals such as Au, Ag, and Cu, which have lower resistance than these, will be used. It is possible to use a material or an alloy as it is as the cathode electrode, and it may be appropriately selected from the viewpoints of ease of patterning, aperture ratio, terminal take-out, hermeticity with glass, and manufacturing cost.

The above-mentioned method for applying the Ni and Al thick film pastes may be applied by solid printing by screen printing.
Coating with a die coater may be used. The thick film paste may be one developed for PDP. For example, there are DuPont-made cathode Ni paste 9538, Noritake-made cathode paste NP9284, and Noritake-made cathode Al paste NP9203.

The method of applying the photosensitive electrode paste may be solid printing by a screen printing method or coating by a die coater. As the photosensitive electrode paste,
It may be one developed for PDP. For example, in the case of a photosensitive Ag electrode, DuPont's Fodel DC202 for an alkali developing type, TR2912 of solar ink manufacturing,
TR1952, and the water development type includes Noritake NP4701.

Further, the material for forming the transparent rib is a paste-like material comprising a low melting point glass frit, a transparent inorganic aggregate and a binder. To use
A solvent can be added for adjusting the viscosity. The paste may be cured using a thermosetting resin or a photosensitive resin as a binder in consideration of a transfer step.

As the intaglio for forming a rib, a mold, a ceramic mold, an ionizing radiation-curable resin sheet intaglio, and a silicone rubber intaglio can be used properly in consideration of the process.

For example, in the rib-forming intaglio used in the pressing method according to the eleventh aspect, a mold or a ceramic mold that can withstand the pressure of the press at the time of molding the rib-forming paste is more preferable. The mold can be formed by a technique such as electronic engraving, etching, mill pressing, rotary lathe cutting, and electroforming. Further, as a ceramics mold, it can be formed by a method such as rotary lathe cutting, die press molding, and slurry method. In addition, in order to enhance the releasability at the time of demolding after forming the rib shape, a silicone film processing is applied to the intaglio of the mold and ceramics mold,
It is also effective to apply a fluorine film processing or the like.

In the rib-forming intaglio used in the embedding method according to the twelfth aspect, an intaglio radiation-curable resin sheet intaglio or a silicone rubber intaglio can be used in addition to the mold and the ceramic mold. As a drawback of the above-mentioned molds and ceramic molds, there is a problem that it is costly to manufacture one mold, and there is a limit to the production capacity. In the ionizing radiation-curable resin sheet intaglio or silicone rubber intaglio,
It is easy to duplicate and is more suitable for mass production. Specifically, since these intaglio can be formed by transferring from a rib-shaped convex matrix as described below, a convex matrix is appropriately selected according to a desired rib-shaped pattern. be able to. A rib-shaped convex matrix formed by lathe cutting on a metal roll, a rib-shaped convex matrix formed by cutting a flat plate, etc., a convex matrix formed by applying a dry film to a flat substrate and forming by photolithography, etc. It is valid.

The method for applying a predetermined amount of the paste-like rib-forming material according to the eleventh aspect on a glass substrate may be solid printing by a screen printing method or coating by a die coater. Alternatively, a material processed into a film may be laminated. Press method is flat press,
A roll press is preferred. It is also effective to perform pressing in a vacuum chamber as a measure against entrapment of air bubbles. Thereafter, after the paste is cured by heat or ultraviolet rays, it is released from the mold and baked, whereby the transparent rib and the transparent dielectric layer can be simultaneously formed. At this time, the thickness of the transparent dielectric layer is determined by the pressure and the pressing time of the flat press or the roll press, and the hardness of the paste. Due to the diameter of the glass frit, if the thickness before firing is less than 5 μm, there will be places where there is no paste or unevenness tends to occur after firing. When the film thickness after firing is 15 μm or more, the transmittance is 95%.
% Or less, and the use efficiency of the backlight decreases. For this reason, it is desirable to appropriately determine the pressing conditions and the composition of the rib-forming paste so that the transparent dielectric film thickness after firing described in claim 2 is in the range of 3 to 15 μm.

The method of embedding the predetermined amount of the paste-like rib forming material according to the twelfth aspect in the intaglio for forming a rib includes the following.
Screen printing, die coating, doctor blade coating, roll coating, roll pressing, flat pressing, and other coatings are preferred. It is also effective to perform coating in a vacuum chamber as a measure against entrapment of air bubbles. At this time, the thickness of the transparent dielectric layer is determined by the rheological properties of the paste and the pressure and speed of the process. Due to the diameter of the glass frit, if the thickness before curing is less than 5 μm, there may be places where no paste is formed, or unevenness tends to occur after firing. When the film thickness after firing is 15 μm or more, the transmittance is 95%.
% Or less, and the use efficiency of the backlight decreases. For this reason, it is desirable to appropriately determine the pressing conditions and the composition of the rib-forming paste so that the transparent dielectric film thickness after firing described in claim 2 is in the range of 3 to 15 μm.

Next, transfer is carried out on a glass substrate. At this time, a method of transferring the rib material to a glass substrate after curing the rib material, and a method of bringing the rib material into contact with the glass substrate in an uncured state, There is a curing method, and either method can be selected. In the former transfer method, an adhesive or an adhesive is used between the rib forming material and the glass substrate. In the latter transfer method, an adhesive or a pressure-sensitive adhesive is not required for curing on a glass substrate, but an adhesive or a pressure-sensitive adhesive is used to complete the pattern transfer at the time of demolding. It is also effective. Thereafter, the transparent rib and the transparent dielectric layer can be simultaneously formed by removing the mold and firing.

As described above, according to the present invention, the transparent rib and the transparent dielectric layer can be formed of the same material. Further, by forming an anode electrode and a cathode electrode on the transparent dielectric layer, the back plate of the plasma addressed liquid crystal panel is completed. The electrodes may be formed before the transparent ribs and the transparent dielectric layer are fired. However, considering the stability of the process, it is more preferable to perform the electrodes after firing.

The following method is suitable as a method for patterning an electrode using the electroless plating method for forming an anode electrode and a cathode electrode according to claim 13. After performing electroless plating on the entire surface as the first method,
After applying a liquid photoresist and exposing and developing with a mask, an unnecessary portion of the plating film is removed by etching to form an electrode pattern shape. As a second method, after applying a liquid photoresist, exposing and developing with a mask, removing only necessary portions of the plating film, coating the entire surface with a plating catalyst, peeling the resist, and plating only the electrode pattern shape After forming the catalyst, plating of a predetermined electrode shape can be formed by electroless plating. It is not necessary to bake because it is plating.

In the method for forming the anode electrode and the cathode electrode according to the present invention, the thick film paste may be applied by solid printing by a screen printing method or by a die coater. The liquid photoresist may be applied by solid printing by a screen printing method or by a die coater. After exposure and development patterning of the resist using a glass mask, an electrode pattern is formed by sandblasting using a protective layer of the resist, but may be liquid honing instead of sandblasting. Finally, firing is performed to form an electrode.

In the method for forming the anode electrode and the cathode electrode according to the present invention, a pattern can be formed by a conventional method using a glass mask exposure by a photosensitive paste method, and the electrodes can be formed by firing.

In the method for forming an anode electrode and a cathode electrode according to the present invention, a method of forming an electrode pattern by a vapor deposition method may be a method of masking unnecessary portions using a liquid photoresist, or a metal mask. It is preferable to use a method of performing evaporation while masking unnecessary portions. In addition, even if the masking of the side surface of the transparent rib is insufficient, since the vapor deposition metal does not easily adhere to the side surface due to the shape of the transparent rib,
Even if it adheres thinly, only the unnecessary portion can be easily removed with an etching solution. It does not need to be fired because it is a deposited film.

The method for applying electrolytic plating according to the seventeenth aspect of the present invention includes a method of applying a normal current by using the terminals of the patterned electrodes according to the thirteenth to sixteenth aspects, so that only a necessary portion is protected by plating. A film can be formed. It is not necessary to bake because it is plating.

As described above, according to the present invention, the transparent rib and the transparent dielectric layer are formed of the same material, and then the anode electrode and the cathode electrode are formed on the transparent dielectric layer, whereby the back of the plasma addressed liquid crystal panel is formed. The face plate is completed.

[0069]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail with reference to embodiments. The present invention is not limited to the embodiments.

<Embodiment 1> A back glass substrate (a sectional view of FIG. 4) of a 42-inch VGA plasma addressed liquid crystal panel having the panel structure of claim 5 is provided.
And a method of manufacturing an electrode according to claim 14 (process diagram 7). The details of the panel production process diagram will be described below.

[0071] The surface of the mold was coated with a fluororesin to improve releasability and used as a press mold.

Composition of rib forming paste Low melting glass frit: PbO-B2O3-SiO2 glass powder (3 μm or less) 70% by mass Transparent inorganic aggregate: Al2O3-B2O3-SiO2 glass powder (1 μm or less) 10% by mass Binder : Ethyl cellulose 5% by mass Binder: Thermosetting epoxy resin 5% by mass Viscosity adjusting solvent: 10% by mass of butyl carbitol acetate The above composition was sufficiently kneaded with a roll mill to obtain a rib-forming paste.

The low expansion coefficient glass substrate having the exhaust pipe connection hole is washed and dried. The paste for forming the transparent rib is solid-coated to a thickness of 30 μm by screen printing. The solvent is dried at 120 ° C. to form a substantially uniform film having a thickness of 25 μm. This film was flat-pressed at a pressure of 10 MPa in a mold having the above-mentioned concave portion, and after 1 minute from the pressing, 2 minutes at 160 ° C.
The glass substrate is removed from the press mold by heating for minutes to thermally cure the epoxy resin, reducing the pressure, and vacuum suction. Thereby, 250 μm height, 100 μm width, pitch 1092 μm
m transparent ribs are formed and the transparent dielectric layer is 1
Formed simultaneously at 5 μm. 30 at 600 ° C in firing furnace
By calcining while holding the transparent ribs, the transparent ribs have a desired 20
Transparent ribs are formed, which are almost perpendicular to a glass substrate having a height of 0 μm and a width of 80 μm and substantially perpendicular to 88 ° and having a side surface of 1 μm or less. In addition, a smooth film having a transmittance of 12 μm and a transmittance of 95% is completed as a transparent dielectric layer.

The transparent rib and the transparent dielectric fired glass substrate are washed and dried. Here, 10% by mass of butyl carbitol acetate is added for the purpose of lowering the viscosity of the Ni paste NP 9284 for cathode manufactured by Noritake. This Ni paste is applied solid by screen printing. Due to the reduced viscosity, the paste accumulates at the bottom of the transparent rib with little adherence to the side of the transparent rib. This is dried to provide a 60 μm thick Ni paste layer. Next, a photosensitive liquid resist OFPR8 manufactured by Tokyo Ohka Kogyo Co., Ltd.
After applying and drying 00, patterning is performed by exposing and developing parallel light with a proximity gap of 300 μm (the gap from the rib top is 100 μm) from the glass surface using a glass mask. The pattern of this glass mask has an electrode width of 100 μm after firing, and because of coating an abnormal discharge prevention cover glass described later, Ni is placed inside the rib pattern within 5 mm from the end of the rib pattern.
It is designed so that thick film electrodes can be formed. Next, after removing unnecessary portions of the Ni electrode material by sandblasting, the resist is removed. In this step, the Ni paste adhered to the side surface can be completely removed. As a result, a striped Ni electrode pattern corresponding to the anode and the cathode in the discharge space is completed.

Further, since it is difficult to vacuum seal the Ni electrode, an Ag electrode is formed as follows for the sealing portion and the terminal electrode portion. The photosensitive Ag electrode paste TR2912 manufactured by Solar Ink is solid-painted on the Ni thick film paste in the range of the edge, the sealing portion, and the terminal electrode portion by a screen printing method to provide a 12 μm Ag electrode paste layer. Then, put the glass mask on the proxy and set it to 500mJ.
/ Cm2. The electrode pattern of the glass mask is Ni
The end portion of the thick film paste, the sealing portion, and the terminal extracting portion.
Note that the electrode width is 100 μm. Next, the film was developed with a 0.4% by weight aqueous solution of Na2CO3 at 23 [deg.] C. at a spray pressure of 0.1 MPa for 5 minutes by a conveyor type spray developing machine, washed with water and dried to form a pattern.

Further, in order to prevent abnormal discharge at the end of the plasma cell, a cover glass paste is applied by screen printing in a width of 10 mm from the end of the rib to the outside of 5 mm. The Ni paste, the Ag paste, and the cover glass paste were fired at 580 ° C. for 30 minutes in a firing furnace. The thickness of the fired Ni electrode was 40 μm,
The thickness of the g electrode is about 6 μm, and the width is about 100 μm. The resistance is about 1 including Ni in the discharge part and Ag in the terminal part.
It becomes about 500Ω at 000 mm. Therefore, the specification is sufficiently achieved as the resistance value. Thereby, the plasma substrate of FIG. 4 according to claim 5 was formed.

<Embodiment 2> A back glass substrate (FIG. 5 as a sectional view) of a 42-inch HDTV plasma addressed liquid crystal panel having the panel structure according to claim 8 is provided.
Method for Manufacturing Transparent Rib / Dielectric Layer Based on 2 (Process Diagram 8)
And an electrode manufacturing method according to claim 17 (process diagram 9). The details of the panel production process diagram will be described below.

[0078] The silicone rubber intaglio plate was used as a transfer intaglio plate utilizing the releasability.

Composition of rib forming paste material Low melting glass frit: PbO-B2O3-SiO2 based glass powder (3 μm or less) 70% by mass Transparent inorganic aggregate: Al2O3-B2O3-SiO2 based glass powder (1 μm or less) 10% by mass Binder: UV curable resin: 8% by mass of diethylene glycol dimethacrylate Binder: UV curable resin: 6% by mass of 2-hydroxypropyl acrylate Binder: Initiator: 1% by mass of benzophenone Solvent for viscosity adjustment: 5% by mass of butyl carbitol acetate The above composition Was sufficiently kneaded with a roll mill to obtain a rib-forming paste.

The low expansion coefficient glass substrate having the exhaust pipe connection hole is washed and dried. The above-mentioned transparent rib forming paste is filled into the above-mentioned intaglio plate made of silicone rubber with a doctor blade and embedded in a 250 μm-deep intaglio plate without bubbles, and at the same time, a film serving as a transparent dielectric layer is formed with a thickness of 7 μm. It is flat-pressed at a pressure of 0.1 MPa while being bonded to the substrate. Next, the intaglio plate and the glass substrate which are bonded together are taken out of the press device, irradiated with ultraviolet light from the glass substrate side under the condition of 1000 mJ / cm2, the rib paste is cured with ultraviolet light, and the silicone rubber intaglio is removed from the glass substrate. . This gives a height of 250 μm,
A transparent rib shape having a width of 60 μm and a pitch of 485 μm is formed, and a transparent dielectric layer is simultaneously formed with a thickness of 7 μm. By firing at 600 ° C. for 30 minutes in a firing furnace, the transparent ribs are almost perpendicular to a glass substrate having a desired height of 200 μm and a width of 45 μm, at 88 degrees, and the side surface is 1 μm.
Within, smooth transparent ribs are completed. In addition, a smooth film having a transmittance of 5% and a transmittance of 97% is formed as a transparent dielectric layer.

The transparent rib and the transparent dielectric fired glass substrate are washed and dried. As the photosensitive electrode paste, a photosensitive Ag electrode paste TR2912 manufactured by Solar Ink is used. Next, this paste is applied and dried by a screen printing method to provide a 12 μm Ag electrode paste layer. Subsequently, the exposure is performed at 1000 mJ / cm2 by using a vertical exposure device to align the glass mask with a proxy. The electrode pattern of the glass mask is all of the anode and cathode electrodes of the terminal extraction part and the plasma cell part. The electrode width of the plasma cell part is 40 μm. Next, by a conveyor type spray developing machine, 0.4 wt% Na2CO3 at 23 ° C.
The pattern was formed by developing with an aqueous solution at a spray pressure of 0.1 MPa for 5 minutes, washing with water and drying.

Further, in order to prevent abnormal discharge at the end of the plasma cell, cover glass paste was applied to the end of the rib at 5 mm.
From outside to the outside by screen printing with a width of 10 mm. The Ag paste and the cover glass paste were baked while being kept at 580 ° C. for 30 minutes in a firing furnace. The thickness of the fired Ag electrode is about 5 μm and the width is about 40 μm. The resistance is about 300Ω at about 1000 mm. Therefore, the specification has already been sufficiently achieved as the resistance value.

Further, in order to protect the discharge section cathode electrode from cation sputtering, Ni was formed to a thickness of about 5 μm by electrolytic plating on the cathode portion of the plasma cell section using a nickel sulfamate plating bath. Thereby, the height of the cathode electrode is about 10 μm, and the width is about 50 μm. Thereby, the plasma substrate of FIG. 5 according to claim 8 was formed. A very good aperture ratio of 80% was obtained.

[0084]

As described in detail above, the following effects can be obtained by forming ribs and electrodes by the manufacturing method according to the present invention. The use of transparent ribs increases the aperture ratio, makes the panel brighter, and widens the viewing angle in the direction perpendicular to the ribs. Since an intaglio manufacturing method that can easily make the rib height uniform can be applied, polishing and the like become unnecessary, and the yield and product stability increase. In the process using the intaglio, there were difficulties in alignment with the electrodes, but here, the electrodes are retrofitted after the ribs are formed, so that a panel with high alignment accuracy can be obtained.

[Brief description of the drawings]

FIG. 1 is a perspective view illustrating the structure of a plasma addressed liquid crystal panel.

FIG. 2 is a partial cross-sectional view of the panel explaining the structure of the plasma addressed liquid crystal panel.

FIG. 3 is a conventional process diagram of a plasma addressed liquid crystal panel back plate.

FIG. 4 is a partial sectional view of a panel for explaining the structure of a plasma addressed liquid crystal panel according to claim 5 of the present invention.

FIG. 5 is a partial sectional view of a panel for explaining the structure of a plasma addressed liquid crystal panel according to claim 8 of the present invention.

FIG. 6 is a process chart for producing a transparent rib / dielectric layer for explaining the first embodiment of the present invention.

FIG. 7 is a process chart of electrode preparation for explaining Example 1 of the present invention.

FIG. 8 is a process diagram of a transparent rib / dielectric layer preparation for explaining Example 2 of the present invention.

FIG. 9 is a process chart of electrode preparation for explaining Example 2 of the present invention.

 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Junichi Arai 1-5-1, Taito, Taito-ku, Tokyo Inside Toppan Printing Co., Ltd. (72) Inventor Naoto Ohno 1-1-5, Taito, Taito-ku, Tokyo Letterpress F-term (reference) in Printing Co., Ltd.

Claims (17)

[Claims] In a back plate of a plasma addressed liquid crystal panel having an anode electrode, a cathode electrode and ribs provided on a back glass substrate, a transparent rib and a transparent dielectric layer are formed of the same material, and the transparent dielectric layer is formed on the transparent dielectric layer. A back plate of a plasma addressed liquid crystal panel, wherein an anode electrode and a cathode electrode are formed. 2. The back plate of a plasma addressed liquid crystal panel according to claim 1, wherein said transparent dielectric film has a thickness of 3 to 15 μm. 3. The back plate of a plasma addressed liquid crystal panel according to claim 1, wherein the angle between the side surface of the transparent rib and the back glass substrate is 85 to 95 degrees. 4. The optical device according to claim 1, wherein the side surface of said transparent rib has a surface roughness of 1 μm or less and is substantially an optical plane.
A back plate of the plasma addressed liquid crystal panel according to any one of the above. 5. The back plate of a plasma addressed liquid crystal panel according to claim 1, wherein the anode electrode and the cathode electrode formed on the transparent dielectric layer are made of the same material. 6. The electrode material according to claim 1, wherein said electrode material comprises a thick film or a plating containing 80% or more of Ni.
6. A back plate of the plasma addressed liquid crystal panel according to any one of 5. 7. The method according to claim 1, wherein the same material comprises a thick film or a vapor-deposited film containing 80% or more of Al.
6. A back plate of the plasma addressed liquid crystal panel according to any one of 5. 8. The plasma address according to claim 1, wherein at least one of the anode electrode and the cathode electrode formed on the transparent dielectric layer has a two-layer structure. Back panel of liquid crystal panel. 9. An anode and a cathode formed of the same material having photosensitivity as a base electrode, and at least the cathode is provided with a protective plating containing at least 80% of Ni having sputter resistance to discharge gas cations. The back plate of the plasma addressed liquid crystal panel according to claim 1, wherein the rear plate is provided. 10. The back plate of a plasma addressed liquid crystal panel according to claim 1, wherein said base electrode is formed using a photosensitive Ag paste. 11. A method for manufacturing a back plate of a plasma addressed liquid crystal panel according to claim 1, wherein a predetermined amount of a paste-like rib forming material is applied on a glass substrate to form a rib. After forming a rib pattern by pressing with an intaglio plate, the organic components are burned off by heating at a high temperature, and the transparent ribs and the transparent dielectric layer are formed by simultaneously sintering the glass frit. A method for manufacturing a back plate of a plasma addressed liquid crystal panel, comprising forming electrodes. 12. A method for manufacturing a back plate of a plasma addressed liquid crystal panel according to claim 1, wherein a predetermined amount of a paste-like rib-forming material is embedded in a rib-forming intaglio, and the material is removed. After transferring onto a glass substrate while maintaining the shape, the organic components are burned off by heating at a high temperature, and simultaneously forming the transparent ribs and the transparent dielectric layer by sintering the glass frit, the cathode electrode and A method for manufacturing a back plate of a plasma addressed liquid crystal panel, comprising forming an anode electrode. 13. The method for manufacturing a back plate of a plasma addressed liquid crystal panel according to claim 11, wherein the method for forming an anode electrode and a cathode electrode according to claim 5 is an electroless plating method. A method of manufacturing a back plate of a plasma addressed liquid crystal panel. 14. The method for manufacturing a back plate of a plasma addressed liquid crystal panel according to claim 11, wherein the method for forming an anode electrode and a cathode electrode according to claim 5 comprises applying a thick film paste. A method of manufacturing a back plate of a plasma addressed liquid crystal panel, comprising: applying a liquid photoresist, patterning, baking after forming an electrode pattern by sandblasting. 15. A method for manufacturing a back plate of a plasma addressed liquid crystal panel according to claim 11, wherein the method for forming an anode electrode and a cathode electrode according to claim 5 is a photosensitive paste method. A method of manufacturing a back plate of a plasma addressed liquid crystal panel. 16. A method for manufacturing a back plate of a plasma addressed liquid crystal panel according to claim 11, wherein the method for forming an anode electrode and a cathode electrode according to claim 5 is a vapor deposition method. A method for manufacturing a back plate of a plasma addressed liquid crystal panel, comprising: 17. The method of manufacturing a back plate of a plasma addressed liquid crystal panel according to claim 11, wherein the base electrode of the anode electrode and the cathode electrode according to claim 8 is formed. The method according to any one of claims 13 to 16, wherein a protective plating layer is provided by performing electrolytic plating with a material having resistance to plasma cation spattering.