JP2001100251A - Electro-optical device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To secure a relatively wide picture display area while preventing a bright-and-dark pattern from being reflected on a display picture by the inner face reflection of wirings positioned in a frame area in a transmission type liquid crystal device or the like. SOLUTION: This electro-optical device comprises a liquid crystal layer 50 held between a pair of transparent TFT array substrate 10 and a transparent counter-substrate 20, and comprises plural pixel electrodes 9a arranged in a picture display area and plural data lines 6a connected with the plural pixel electrodes 9a via each TFT 30, respectively, on the TFT array substrate on the side facing the counter-substrate. A 1st shading film 53 specifying a frame area of the picture display area is laminated between the TFT array substrate and the data lines.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention belongs to the technical field of electro-optical devices such as liquid crystal devices, and more particularly to the technical field of transmissive electro-optical devices having a light-shielding film for defining a frame area of an image display area. .

[0002]

2. Description of the Related Art Electro-optical devices of this type include various wirings such as data lines and scanning lines, pixel electrodes, thin film transistors (hereinafter, appropriately referred to as TFTs) for pixel switching, thin film diodes (hereinafter, appropriately referred to as TFDs), and the like. The element array substrate on which the switching elements and the like are formed and the opposing substrate on which a counter electrode, a color filter, a light-shielding film, and the like formed in stripes or over the entire surface are arranged to face each other.
An electro-optical material such as a liquid crystal is surrounded by a sealing material between the pair of substrates, and the center of the sealing region where the sealing material exists is closer to the center (that is, a region on the substrate facing the liquid crystal or the like). An image display area in which a plurality of pixel electrodes are arranged is located. Here, particularly, the frame area of the image display area is defined by the same film as the light-shielding film provided on the counter substrate as described above along the inner contour of the seal area when viewed in plan.

As described above, the electro-optical device in which the frame area is defined by the light-shielding film on the counter substrate is provided in a light-shielding mounting case made of plastic or the like provided with a display window corresponding to the image display area. It is accommodated so that the edge of the display window is located near the center line of the area.

[0004]

However, according to the above-described electro-optical device, Cr (chromium) on the opposite substrate is not used.
Since the frame region is defined by the light-shielding film made of the same, the surface of the wiring formed on the element array substrate from an Al (aluminum) film or the like facing the opposite substrate (that is, the inner surface of the wiring) and the opposite substrate The frame area is defined by display light that enters from the opposite substrate side and exits from the element array substrate by internal reflection by the surface of the upper light shielding film facing the element array substrate side (that is, the inner surface of the light shielding film). Light having a light and dark pattern corresponding to the presence or absence of the wiring located in the frame area that should be hidden by the light shielding film is mixed. Finally, there is a problem that a light-dark pattern (for example, a light-dark pattern such as a striped pattern when a plurality of wirings are arranged) due to internal reflection of the wiring is projected near an edge of a display image. is there. Conversely, in order to hide the light and dark pattern projected by the internal reflection of such wiring, it is necessary to form a wide light shielding film so as to define a frame area that is considerably wider than the area on the substrate occupied by the wiring to be hidden. Would.
As a result, it is difficult to meet the basic requirement of the electro-optical device to secure as large an image display area as possible in a limited area on the substrate. In particular, even if a wide light-shielding film is formed in order to hide the light and dark patterns due to the internal reflection of the wiring, if the positioning accuracy of the display window of the mounting case is not improved, the misalignment between the mounting case and the electro-optical device may occur. Accordingly, such a light and dark pattern is projected in the vicinity of one of the left and right sides and the upper and lower sides of the display image. Therefore, high precision is required for the shape required for the mounting case and the mechanical alignment when the electro-optical device is housed in the mounting case, and it is necessary to configure the case with a sufficient margin for incident light. Can not. As described above, high dimensional accuracy is required for the production of the mounting case, which leads to an increase in the production cost. Further, it is difficult to secure a wide image display area and at the same time prevent a light-dark pattern due to internal reflection of the wiring from being projected. . In addition, in order to reduce the adverse effects due to the internal reflection of the wiring and the light-shielding film, there is also a technique of tapering the end of the display window of the mounting case. Therefore, it is not enough to hide the light and dark pattern due to the internal reflection of the wiring.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems, and it is possible to secure a relatively large image display area while preventing a light and dark pattern due to internal reflection of a wiring from being displayed in a display image. It is an object to provide an electro-optical device.

[0006]

An electro-optical device according to the present invention comprises an electro-optical material sandwiched between a pair of a transparent first substrate and a transparent second substrate. On the first substrate, a plurality of pixel electrodes arranged in an image display area, a plurality of wirings respectively connected to the plurality of pixel electrodes, and a layer stacked between the first substrate and the wiring First defining a frame area of the image display area
A light shielding film.

According to the electro-optical device of the present invention, an electro-optical material such as a liquid crystal is sandwiched between the first transparent substrate and the second transparent substrate. Light enters and exits from the first substrate side through the electro-optic material. That is, the electro-optical device of the present invention is a transmission type electro-optical device. In the image display area of such an electro-optical device, a plurality of pixel electrodes are arranged, and a plurality of wirings are respectively connected to the plurality of pixel electrodes.
Here, in the present invention, "the wiring is connected to the pixel electrode" means that the wiring may be directly connected to the pixel electrode by electrical contact, and the wiring and the pixel electrode are integrally formed from the same conductive film. Pixel switching TFT
And may be connected via a TFD. Here, particularly, the frame region is defined by the first light-shielding film laminated between the first substrate and the wiring. Therefore, even if part of the light incident from the second substrate side is internally reflected by the conductive film such as Al forming the wiring, the reflected light is again internally reflected by the first light-shielding film defining the frame region. No light is emitted from the first substrate side. That is, it is possible to prevent a situation in which light having a light and dark pattern corresponding to the presence or absence of wiring is mixed with light for display, and this light and dark pattern image is finally displayed near the edge of the display image. Further, according to the present invention, the return light reflected from the back surface of the first substrate and the return light from the projection optical system that projects display light emitted from the first substrate to the first substrate define the frame region. Even if the light is internally reflected by the first light-shielding film and emitted from the first substrate side, since the first light-shielding film is provided in the frame region, an image corresponding to the presence or absence of the first light-shielding film has a stripe pattern or the like. Is not a special light and dark pattern, but merely a picture of a frame surrounding the periphery of the display image. Therefore, such a picture frame is
This is very convenient for the viewer of the display image without any worries. Further, since it is not necessary to worry that the image of the frame is captured due to the internal reflection on the first light-shielding film, when the electro-optical device is accommodated in the mounting case, the mechanical High accuracy is not required for positioning, and high accuracy is not required for the shape and dimensions of the display window. As a result, the mounting case can be configured with a sufficient margin for incident light, which is very advantageous in practice.

As a result, with the electro-optical device of the present invention, the deterioration of the quality of the displayed image due to the internal reflection of the wiring made of a light-shielding film or an Al film for defining the frame region is reduced using a relatively simple structure. In addition, an electro-optical device capable of displaying a bright and high-quality image can be realized with a relatively wide image display area secured.

In the electro-optical device according to the present invention, the frame region may be entirely defined by the first light-shielding film alone, or the frame region may be partially defined by the first light-shielding film, and the remaining portion may be defined. May be defined by another light-shielding film. In the latter case, the effect of the present invention as described above increases as the ratio of the frame region defined by the first light-shielding film increases, and the display image has higher quality.

In another electro-optical device according to the present invention, an electro-optical material is sandwiched between a pair of a transparent first substrate and a transparent second substrate, and the first electro-optical device is provided on a side facing the second substrate.
A plurality of pixel electrodes arranged on an image display area on the substrate, and a plurality of wirings respectively connected to the plurality of pixel electrodes, wherein the first electrode on the side opposite to the second substrate is provided;
A first light-shielding film for defining a frame of the image display area is provided on the substrate.

According to another electro-optical device of the present invention, an electro-optical material such as a liquid crystal is sandwiched between a transparent first substrate and a transparent second substrate. Light is incident and emitted from the first substrate side through the electro-optical material. In the image display area of such an electro-optical device, a plurality of pixel electrodes are arranged, and a plurality of wirings are respectively connected to the plurality of pixel electrodes. Here, particularly, the frame region is defined by the first light-shielding film provided on the first substrate on the side opposite to the second substrate. Therefore, even if part of the light incident from the second substrate side is internally reflected by the conductive film such as Al forming the wiring, the reflected light is again internally reflected by the first light-shielding film defining the frame region. No light is emitted from the first substrate side. That is, it is possible to prevent a situation in which light having a light and dark pattern corresponding to the presence or absence of wiring is mixed with light for display, and this light and dark pattern image is finally displayed near the edge of the display image. Further, according to the present invention, even if return light from the projection optical system that projects display light emitted from the first substrate to the first substrate is reflected by the first light-shielding film that defines the frame region, the first light Since the light-shielding film is provided in the frame area, the image corresponding to the presence or absence of the first light-shielding film does not become a special light and dark pattern such as a striped pattern, but is simply an image of a frame surrounding the display image. It just becomes. Therefore, such an image of a frame is not particularly anxious for a viewer of a display image, and is very convenient. Further, since it is not necessary to worry that the picture of the frame is reflected by the reflection on the first light shielding film,
When the electro-optical device is accommodated in the mounting case, high precision is not required for mechanical alignment between the electro-optical device and the mounting case, and high accuracy is not required for the shape and dimensions of the display window. As a result, the mounting case can be configured with a sufficient margin for incident light, which is very advantageous in practice.

As described above, according to another electro-optical device of the present invention, the quality of a displayed image is degraded due to internal reflection of a wiring made of a light-shielding film or an Al film that defines a frame region, using a relatively simple structure. And an electro-optical device capable of displaying a bright and high-quality image can be realized with a relatively wide image display area secured.

In another electro-optical device according to the present invention, the first
The frame region may be entirely defined by the light shielding film alone,
The frame region may be partially defined by the light-shielding film, and the remaining portion may be defined by another light-shielding film. In the latter case, the first
As the ratio of the frame region defined by the light-shielding film increases, the effect of the present invention as described above increases, and the display image has higher quality.

In one aspect of the electro-optical device according to the present invention, the first light-shielding film contains a high melting point metal.

According to this aspect, the first light-shielding film contains a refractory metal, for example, opaque refractory metals such as Ti (titanium), Cr (chromium), W (tungsten), and Ta (tantalum). ), Mo (molybdenum), Pb
It is composed of a single metal, an alloy, a metal silicide or the like containing at least one of (lead) and the like. With such a material, the first light-shielding film can be prevented from being broken or melted by the high-temperature treatment performed after the step of forming the first light-shielding film on the first substrate in the manufacturing process. That is, the first light-shielding film can be stacked at a desired stacking position without considering the order of the high-temperature processing during the manufacturing process.

According to another aspect of the electro-optical device of the present invention, the wiring is disposed so as to cross the frame region.

According to this aspect, since the wiring is arranged so as to cross the frame area, the first light-shielding film defining the frame area is temporarily provided on the second substrate or the second substrate rather than the wiring as in the conventional example. If it is provided on the side near the frame, a light and dark pattern corresponding to the planar layout of the wiring crossing the frame area is projected near the edge of the display image. However, in the present invention, since the first light-shielding film is provided on the first substrate side of the wiring, a light and dark pattern corresponding to such a planar layout of the wiring is not projected, and thus the desired light-shielding film is provided in the frame region. Wiring can be arranged in a planar layout,
This is also advantageous in terms of device design.

In another aspect of the electro-optical device according to the present invention, a peripheral circuit disposed in the frame region on the first substrate on a side facing the second substrate and for driving the pixel electrode And the peripheral circuit includes a plurality of peripheral circuit thin film transistors.

According to this aspect, the pixel electrode can be driven at a high driving frequency by the peripheral circuit provided on the first substrate and including the plurality of peripheral circuit thin film transistors. Furthermore, by arranging peripheral circuits in the frame area,
The limited area on the substrate can be effectively used, and the image display area can be made wider on a substrate having the same area. Here, in particular, since the peripheral circuits are arranged in the frame region, the first circuit that temporarily defines the frame region as in the conventional example is used.
When the light-shielding film is provided on the second substrate or on a side closer to the second substrate than the wiring, a light-dark pattern corresponding to the planar layout of the thin film transistor for the peripheral circuit arranged in the frame region is provided near the edge of the display image. It will be projected on. However, in the present invention, since the first light-shielding film is provided on the first substrate side of the wiring, a light-dark pattern corresponding to a planar layout of such a thin film transistor for a peripheral circuit does not appear, so that the frame region is In addition, the thin film transistor for the peripheral circuit can be arranged in a desired planar layout, which is advantageous in device design.

In this aspect, the peripheral circuit is a sampling circuit, and the thin film transistor for the peripheral circuit is:
It may be a sampling switch that samples an image signal and supplies it to the wiring.

With this configuration, the pixel electrode can be driven at a higher driving frequency by the sampling circuit including the plurality of thin film transistors for the peripheral circuit as the sampling switch.

In the aspect in which the peripheral circuit is arranged in the frame region, the first light-shielding film has an opening at least in a region facing the channel region of the thin film transistor for the peripheral circuit, and the opening is Alternatively, the wiring may be covered with a part of the wiring when viewed in plan from the side of the second substrate.

According to this structure, since the opening is provided in at least a region of the thin film transistor for the peripheral circuit opposed to the channel region, the transistor characteristics of the thin film transistor for the peripheral circuit change according to the potential of the first light-shielding film. The situation can be prevented before it happens. If there is no opening, the first light-shielding film and the channel region provided on the first light-shielding film will cause a first coupling due to capacitive coupling.
The transistor characteristics of the thin film transistor for the peripheral circuit may deteriorate or change due to the potential of the light shielding film.
However, when an opening is provided in the first light-shielding film, there is a concern that light passing through the opening has a bad effect on a display image. In the present invention, the opening is, for example, viewed from the second substrate side in a plan view. There is no problem because it is covered by a part of the wiring made of Al or the like. For example, it is sufficient to form and cover a part of the wiring wide at a portion facing the opening, which is advantageous because it does not increase the number of manufacturing steps or complicate the manufacturing process.

In the aspect in which the peripheral circuit is arranged in the frame region, the first light-shielding film has an opening at least in a region facing the gate of the thin film transistor for the peripheral circuit, and the first substrate or the first substrate has The light emitting device further includes another light-shielding film that covers the opening when viewed in plan from the side of the second substrate.

According to this structure, since the opening is provided in at least a region of the thin film transistor for the peripheral circuit opposed to the channel region, the transistor characteristic of the thin film transistor for the peripheral circuit changes according to the potential of the first light-shielding film. The situation can be prevented before it happens. However, if an opening is provided in the first light-shielding film, there is a concern that light passing through the opening may adversely affect a display image. However, in the present invention, the opening is planarly viewed from the first substrate or the second substrate. Since it is covered with another light-shielding film, no problem occurs. For example, it suffices that another light-shielding film is formed and covered in an island shape at a location facing the opening.

In another aspect of the electro-optical device of the present invention, the wiring is a data line, and a plurality of scanning lines intersecting the data line are provided on the first substrate on a side facing the second substrate. And a pixel switching thin film transistor connected to the data line, the scanning line, and the pixel electrode.

According to this aspect, during the operation, the image signal is supplied to the data line, the scanning signal is supplied to the scanning line, and the pixel electrode is driven by the pixel switching thin film transistor. More specifically, at the timing when the scanning signal is supplied from the scanning line to the pixel switching thin film transistor, the image signal is supplied from the data line to the pixel electrode via the pixel switching thin film transistor.
That is, the electro-optical device according to this embodiment is a transmission electro-optical device of a TFT active matrix driving system.

In another aspect of the electro-optical device of the present invention, the pixel switching thin film transistor is formed of the same film as the first light shielding film, and at least a channel region of the pixel switching thin film transistor is formed of the first light shielding film. The display device may further include a second light-shielding film formed at a position to cover when viewed from the substrate side.

According to this structure, at least the channel region of the pixel switching thin film transistor is covered by the second light-shielding film when viewed from the first substrate side. The return light from the projection optical system that projects the display light emitted from one substrate to the first substrate is prevented from entering the channel region, thereby preventing the characteristics of the pixel switching thin film transistor from changing. In particular, since such a second light-shielding film is made of the same film as the first light-shielding film that defines the frame region, both can be manufactured in the same process, which is advantageous in the manufacturing process.

Alternatively, in the aspect including the pixel switching thin film transistor, the first light shielding film is formed of a conductive material, and is formed of the same film as the first light shielding film, and further includes the pixel switching thin film transistor and the pixel electrode. And a relay conductive layer for relaying the same through a contact hole.

With this structure, even when the interlayer distance between the pixel electrode and the pixel switching thin film transistor is large, the relay conductive layer generally called a barrier layer makes it relatively easy and reliable and relatively easy. Both can be electrically connected using a small diameter contact hole. And especially,
Since such a relay conductive layer is made of the same film as the first light-shielding film that defines the frame region, both can be manufactured in the same process, which is advantageous in the manufacturing process.

In another aspect of the electro-optical device of the present invention, the first light-shielding film is formed from a conductive material, and the first light-shielding film is fixed at a constant potential.

According to this aspect, since the first light-shielding film formed of a conductive material is fixed at a constant potential, the potential change of the first light-shielding film during the operation of the electro-optical device is caused by the first light-shielding film. It is possible to avoid adversely affecting other wirings, elements, and the like that are superimposed on or adjacent to the film.

In this embodiment, the power supply terminal may include a power supply terminal for supplying the constant potential, and a peripheral circuit for supplying a power supply voltage via the power supply terminal.

With this configuration, the first light-shielding film can be reliably fixed at a constant potential by using the power supply voltage supplied to the peripheral circuit.

In the above-described embodiment having the second light-shielding film, the first light-shielding film and the second light-shielding film may be electrically connected.

With this configuration, the first light-shielding film and the second light-shielding film can be fixed at the same constant potential.

In another aspect of the electro-optical device of the present invention, the first light-shielding film is formed of a conductive material, and further includes another wiring made of the same film as the first light-shielding film.

According to this aspect, other wirings can be used as redundant wirings such as data lines, scanning lines, and capacitance lines, and constant potential wirings for lowering the first light shielding film itself to a constant potential. And, in particular, such other wiring is the first wire defining the frame area.
Since the light shielding film and the same film are formed, both can be manufactured in the same process, which is advantageous in the manufacturing process.

In another aspect of the electro-optical device of the present invention, the electro-optical device further includes another light-shielding film that overlaps at least a part of the first light-shielding film and defines the frame region.

According to this aspect, the other light-shielding film overlaps at least a part of the first light-shielding film, and at least partially defines the frame region redundantly. The stacking position of such another light shielding film is not limited as in the first light shielding film, and is arbitrary. That is, a first light-shielding film made of the same film as the second light-shielding film covering the switching thin-film transistor from below, and a first light-shielding film made of the same film as the relay conductive layer interposed between the switching thin-film transistor and the pixel electrode. 1
A light shielding film, a first light shielding film provided on the back side of the first substrate,
By defining the frame region redundantly using two or more of the other light-shielding films provided on the substrate and the other light-shielding films provided on the second substrate, the inner surface reflection of the wiring in the frame region is achieved. Thus, a situation in which a light-dark pattern is projected can be prevented more reliably.

The operation and other advantages of the present invention will become more apparent from the embodiments explained below.

[0043]

Embodiments of the present invention will be described below with reference to the drawings.

(Overall Configuration of Electro-Optical Device) First, the overall configuration of the electro-optical device of the present embodiment will be described with reference to FIGS.
This will be described with reference to FIG. Here, TF with built-in drive circuit
A transmissive liquid crystal device of a T active matrix drive system will be described as an example.

FIG. 1 is a plan view of the TFT array substrate together with the components formed thereon viewed from the counter substrate side, and FIG. 2 is a cross-sectional view taken along the line HH 'of FIG.

1 and 2, in the liquid crystal device, a liquid crystal layer 50 is sealed between a TFT array substrate 10 as an example of a transparent first substrate and a counter substrate 20 as an example of a transparent second substrate. The TFT array substrate 10 and the counter substrate 20 are adhered to each other by a seal member 52 provided in a seal region located around the image display region 10a.

The sealing material 52 is made of, for example, an ultraviolet curable resin, a thermosetting resin, or the like for bonding both substrates.
After being applied on the TFT array substrate 10 in the manufacturing process, it is cured by ultraviolet irradiation, heating, or the like. If the liquid crystal device is a small-sized liquid crystal device such as a projector, which performs enlarged display, a glass fiber or a glass fiber for setting a distance between the two substrates (a gap between the substrates) to a predetermined value is included in the sealing material 52. A gap material (spacer) such as glass beads may be sprayed. Alternatively, such a gap material may be included in the liquid crystal layer 50 if the liquid crystal device is a large-sized liquid crystal device such as a liquid crystal display or a liquid crystal television that displays images at the same magnification.

A first light-shielding film 53 for defining a frame area of the image display area 10a is provided on the TFT array substrate 10 in parallel with the inside of the seal area where the seal material 52 is arranged.

A data line driving circuit 101 and an external circuit connection terminal 102 are provided along a side of the TFT array substrate 10 in a peripheral region outside the sealing region where the sealing material 52 is disposed. 104 are provided along two sides adjacent to this one side. Further, on the remaining one side of the TFT array substrate 10, a plurality of wirings 105 for connecting between the scanning line driving circuits 104 provided on both sides of the image display area are provided. Further, at least one corner portion of the opposite substrate 20 is provided with an upper / lower conductive material 106 for establishing electrical conduction between the TFT array substrate 10 and the opposite substrate 20.

In FIG. 2, an alignment film made of a polyimide-based material is formed on a pixel array 9a after a pixel switching TFT and wiring such as a scanning line, a data line, and a capacitance line are formed on a TFT array substrate 10. Are formed. On the other hand,
On the counter substrate 20, an alignment film made of a polyimide-based material is formed on the uppermost layer portion where the counter electrode 21 is formed (the lowermost layer in FIG. 2). Each of the pair of alignment films is coated with a polyimide-based material in a manufacturing process, and after baking, alignment processing is performed to align the liquid crystal in the liquid crystal layer 50 in a predetermined direction and to give the liquid crystal a predetermined pretilt angle. It has been subjected.

The liquid crystal layer 50 is made of, for example, a liquid crystal in which one or several kinds of nematic liquid crystals are mixed, and takes a predetermined alignment state between a pair of alignment films.

(Circuit Configuration of Electro-Optical Device) The circuit configuration of the electro-optical device according to the present embodiment will be explained with reference to FIG. Here, FIG. 3 is a block diagram of the electro-optical device according to the present embodiment.

FIG. 3 shows an equivalent circuit such as various elements and wirings in a plurality of pixels formed in a matrix forming an image display area on a TFT array substrate of a liquid crystal device, and a peripheral circuit located around the image display area. Is shown.

In FIG. 3, a plurality of pixels formed in a matrix forming an image display area of the liquid crystal device according to the present embodiment are provided with TFTs 30 for controlling a pixel electrode 9a.
Are formed in a matrix, and a data line 6a to which an image signal is supplied is electrically connected to a source of the TFT 30. Image signal S to be written to data line 6a
, Sn may be supplied line-sequentially in this order, and the image signals S1, S2,..., Sn are converted into N (where N is a natural number of 2 or more) serial-parallel signals. The data may be converted and supplied from the N image signal lines 115 to N data lines 6a adjacent to each other for each group.

The scanning line 3a is electrically connected to the gate of the TFT 30, and the scanning signals G1, G2,..., Gm are applied to the scanning line 3a in a pulsed manner in this order at a predetermined timing. It is configured to be. The pixel electrode 9a is electrically connected to the drain of the TFT 30. By closing the switch of the TFT 30, which is a switching element, for a certain period, the image signals S1, S2,... Write at a predetermined timing. The image signals S1, S2,..., Sn of a predetermined level written in the liquid crystal via the pixel electrodes 9a are:
It is held for a certain period of time between a counter electrode (see FIG. 2) formed on the counter substrate. The liquid crystal modulates light by changing the orientation and order of the molecular assembly according to the applied voltage level, thereby enabling gray scale display. In the normally white mode, the incident light cannot pass through the liquid crystal portion according to the applied voltage. In the normally black mode, the incident light passes through the liquid crystal portion according to the applied voltage. The liquid crystal device emits light having a contrast corresponding to the image signal as a whole. Here, in order to prevent the held image signal from leaking, a storage capacitor 70 is added in parallel with a liquid crystal capacitor formed between the pixel electrode 9a and the counter electrode. For example, the voltage of the pixel electrode 9a is held by the storage capacitor 70 for a time that is three orders of magnitude longer than the time during which the source voltage is applied. Thereby, the holding characteristics are further improved, and a liquid crystal device having a high contrast ratio can be realized. As a method of forming the storage capacitor 70, it goes without saying that the capacitor line 3b, which is a wiring for forming the capacitor, may be provided, or the capacitor may be formed between the storage line 70 and the preceding scanning line 3a. No.

In FIG. 3, the liquid crystal device drives the data line 6a as an example of a peripheral circuit around the image display area on the TFT array substrate on which the data line 6a, the scanning line 3a, etc. are formed as described above. Data line drive circuit 10
1. A scanning line driving circuit 104 for driving the scanning line 3a and a sampling circuit 103 for sampling an image signal are provided. Further, around the image display area, N for supplying N serial-parallel converted image signals S1, S2,..., Sn from the external circuit connection terminal as described above.
The image signal lines 115 are wired. Image signal line 1
Reference numeral 15 denotes an image signal S which has been serial-parallel converted into N signals from a control circuit (not shown) via an external circuit connection terminal.
1, S2,..., Sn are supplied.

The data line driving circuit 101 converts the sampling circuit driving signal via the sampling circuit driving signal line 114 into a sampling circuit in accordance with the scanning line driving circuit 104 sequentially sending the scanning signals to the scanning lines 3a in a pulsed manner. 1
3 is supplied to the control terminal of each sampling switch 103a. The sampling circuit 103 samples the image signal on the image signal line 115 according to the sampling circuit drive signal and supplies the sampled image signal to the data line 6a.

Each of the sampling switches 103a constituting the sampling circuit 103 is preferably an n-channel type, a p-channel type, which can be manufactured by the same manufacturing process as the TFT 30 in the pixel portion from the viewpoint of manufacturing efficiency and the like.
Alternatively, it is composed of a complementary TFT or the like.

Next, with reference to FIGS. 4 to 6, the first light-shielding film 53 for defining the frame region in the present embodiment will be described in detail. Here, FIG. 4 is a schematic cross-sectional view showing, on an enlarged scale, the lamination structure on the TFT array substrate 10 side in the CC ′ cross-section in FIG. 1, and FIG. 5 shows the lamination structure of the comparative example at a corresponding location. FIG. 6A is a schematic cross-sectional view showing an enlarged structure, and FIG. 6A is a schematic conceptual diagram showing a basic principle of blocking incident light and return light in the embodiment shown in FIG. 5, and FIG. FIG. 6B is a schematic conceptual diagram showing a basic principle of blocking incident light and return light in the comparative example shown in FIG.

As shown in FIG. 4, in this embodiment,
The first light-shielding film 53 that defines the frame area of the image display area (see FIG. 1)
It is laminated between the TFT array substrate 10 and the data line 6a. In the example shown in FIG. 4, a plurality of data lines 6a are formed from a light-shielding thin film such as a metal film such as Al or an alloy film such as metal silicide, and are arranged so as to cross the frame region. 3 (that is, the sampling circuit 103 shown in FIG. 3 is disposed in a frame area on the peripheral side of the data line 6a or outside the frame area). Therefore, even if a part Lin1 of the incident light Lin incident from the counter substrate side is internally reflected by the data line 6a, the reflected light is again internally reflected by the first light shielding film 53 and is emitted from the TFT array substrate 10 side. Never. That is, it is possible to prevent a situation in which light having a light / dark pattern corresponding to the presence / absence of the data line 6a is mixed with the output light Lout for display, and this light / dark pattern image is finally displayed near the edge of the display image.

Here, as in the comparative example shown in FIG. 5, the opposite substrate 2 is placed on the opposite substrate 20 (or the opposite side of the data line 6a).
In the case where a light-shielding film 23 'for defining a frame area is provided (on the side close to 0), a part Lin1 of the incident light Lin
a and the light-shielding film 23 ′, and the reflected light L
The light Lout1 having the light / dark pattern corresponding to the presence / absence of the data line 6a is mixed with out, and the light / dark pattern corresponding to the presence / absence of the data line 6a in the frame region is finally displayed near the edge of the display image.

In particular, in this example, a plurality of data lines 6a are arranged so as to cross the frame area.
According to the structure of the present embodiment, as shown in FIG.
The light having a light / dark pattern corresponding to the presence or absence of the plurality of data lines 6a generated by the internal reflection between the lower surface of the first light-shielding film 53 and the upper surface of the first light-shielding film 53 finally becomes a data The light that is emitted or attenuated toward the opposing substrate 20 through the gap between the lines 6a,
It hardly mixes with out.

On the other hand, as shown in FIG.
According to the structure of the comparative example, a part Lin1 of the incident light Lin is internally reflected between the upper surface of the data line 6a and the lower surface of the light-shielding film 23 ', and the plurality of data lines 6 generated by the internal reflection.
The light serving as a light / dark pattern corresponding to the presence or absence of a is finally emitted or attenuated toward the TFT array substrate 10 due to the gap between the data lines 6a and the presence of the light shielding film 23 ′.
Part of Lout1 is mixed into the emitted light Lout emitted from the TFT array substrate 10 side. As a result, according to the comparative example, a light / dark pattern 201 corresponding to the planar layout of the data line 6a crossing the frame area is projected near the edge of the display image 200 formed by projecting the emission light Lout via the projection optical system. It will be.

However, as shown in FIG. 4 and FIG. 6A, in the present embodiment, since a light and dark pattern corresponding to such a planar layout of the data lines 6a is not displayed, the frame area is not included. In a desired plane layout, the data lines 6a and other wirings and elements made of a conductive material having at least some light reflectivity can be arranged, which is very advantageous in device design.

As is clear from the comparison with the comparative example, according to the present embodiment, the quality of the displayed image can be remarkably improved.

Further, according to the present embodiment, FIGS.
As shown in FIG. 3A, the return light reflected on the back surface of the TFT array substrate 10 and the output light Lout for display emitted from the TFT array substrate 10 are projected from the projection optical system to project Tout.
A part Lr1 of the return light to the FT array substrate 10 is internally reflected by the first light shielding film 53, and
(In other words, a part of the return light Lr1 is reflected by the first light-shielding film 53 and is mixed into the display light Lout emitted from the TFT array substrate 10). In particular, when a color projector is configured by combining three electro-optical devices, return light that penetrates an optical system such as a prism that combines three output lights is strong, and such return light Lr1 is strong. It may have a light intensity that cannot be ignored.
However, even in such a case, since the first light-shielding film 53 is provided in the frame region, the image corresponding to the presence or absence of the first light-shielding film 53 has a special light and dark pattern such as a stripe pattern (FIG. 6).
(Refer to (b))), but merely a frame image surrounding the display image. Therefore, such an image of a frame is not particularly anxious for a viewer of a display image, and is very convenient. On the other hand, in the comparative example, as shown in FIG. 6B, the reflection path of the part Lr1 of the return light also differs depending on the presence or absence of the data line 6a. This causes the light and dark pattern 201 to be projected.

Further, in the present embodiment, since the image of the picture frame due to the internal reflection on the data line 6a and the first light-shielding film 53 does not have to be taken into account as described above, the electro-optical device is accommodated in the mounting case. In this case, high precision is not required for mechanical alignment between the electro-optical device and the mounting case, and high precision is not required for the shape and dimensions of the display window. In addition, there is no need to form a taper at the edge of the display window of the mounting case as a measure against internal reflection as in the conventional example. As a result, the mounting case can be configured with a sufficient margin for incident light, which is very advantageous in practice. In this embodiment, in the frame area, the data line 6a
Has been described only for the wiring portion extended from the scanning line 3a.
It is needless to say that the same effect can be obtained even when the wiring portion extending from the above is shielded from light.

The first light-shielding film 53 for defining the frame as described above
Are preferably opaque refractory metals Ti, Cr,
It is composed of a metal simple substance, an alloy, a metal silicide or the like containing at least one of W, Ta, Mo and Pb. With such a material, the pixel switching TFT 30 formed after the step of forming the first light-shielding film 53 on the TFT array substrate 10 (and the second light-shielding film in a pixel portion, which will be described later, made of the same film) is formed. By the high temperature treatment in the formation process, the first light shielding film 53 and the second light shielding film can be prevented from being broken or melted. Also, the first light shielding film 53
It is desirable to use a low reflection film as much as possible. Thereby, light is easily attenuated even if the light is internally reflected.
In addition, as a method of making a high-melting-point metal have low reflection, light may be scattered by oxidizing the surface or providing unevenness. Further, even if a polysilicon film or the like is laminated on the high melting point metal, there is an effect of suppressing reflection.

Next, the configuration of the pixel portion in the image display area of the liquid crystal device according to the first embodiment will be described with reference to FIGS. FIG. 7 is a plan view of a plurality of pixel groups adjacent to each other on a TFT array substrate on which data lines, scanning lines, pixel electrodes, a second light-shielding film, and the like are formed, and FIG.
It is -A 'sectional drawing. In FIG. 8, the scale of each layer and each member is made different so that each layer and each member have a size recognizable in the drawing.

In FIG. 7, a plurality of transparent pixel electrodes 9a are arranged in a matrix on a TFT array substrate of a liquid crystal device.
(The outline is indicated by a dotted line portion 9a ′), and the data line 6a, the scanning line 3a, and the capacitor line 3b are provided along the vertical and horizontal boundaries of the pixel electrode 9a.
The data line 6a is electrically connected to a source region described later in the semiconductor layer 1a such as a polysilicon film via the contact hole 5, and the pixel electrode 9a is connected to the contact hole 8
Is electrically connected to a drain region described later in the semiconductor layer 1a. In addition, the scanning lines 3a are arranged so as to face a channel region (a hatched region falling rightward in the figure) of the semiconductor layer 1a to be described later. The second light-shielding film 11a in the pixel portion is provided in a region indicated by oblique lines rising to the right in the drawing. That is, in the pixel portion, the second light-shielding film 11a forms a TFT including the channel region of the semiconductor layer 1a with TF.
It is provided at a position to cover each when viewed from the side of the T array substrate. When the second light-shielding film 11a covers the channel region of the semiconductor layer 1a, the function of preventing light leakage in the pixel TFT is exhibited, but the second light-shielding film 11a has a wiring function for setting the second light-shielding film 11a to a constant potential. And the opening area of the pixel portion (that is,
In the present embodiment, the second light-shielding film 11a is particularly provided in a stripe shape along the scanning line 3a for the reason of defining a region through which light is transmitted).

As shown in FIG. 8, the liquid crystal device includes a TFT array substrate 10 and a counter substrate 20. The TFT array substrate 10 is made of, for example, a quartz substrate,
0 is made of, for example, a glass substrate or a quartz substrate. The pixel electrode 9a is provided on the TFT array substrate 10, and an alignment film 16 on which a predetermined alignment process such as a rubbing process is performed is provided above the pixel electrode 9a. The pixel electrode 9a is made of, for example, a transparent conductive film such as an ITO film (Indium Tin Oxide film). The alignment film 16 is made of, for example, an organic film such as a polyimide film.

On the other hand, a counter electrode 21 is provided on the entire surface of the counter substrate 20, and an alignment film 22 on which a predetermined alignment process such as a rubbing process is performed is provided below the counter electrode 21. I have. The counter electrode 21 is made of, for example, a transparent conductive film such as an ITO film. The alignment film 22 is made of an organic film such as a polyimide film.

Each pixel electrode 9 is provided on the TFT array substrate 10.
A pixel switching TFT 30 that controls switching of each pixel electrode 9a is provided at a position adjacent to the pixel electrode 9a.

The opposing substrate 20 may be provided with a third light-shielding film 23 in a region other than the opening region of each pixel. As a result, incident light from the side of the opposing substrate 20 is transmitted to the channel region 1 a ′ of the semiconductor layer 1 a of the pixel
It does not enter the low-concentration source region 1b and the low-concentration drain region 1c, which are D (Lightly Doped Drain) regions. Further, the third light-shielding film 23 has a function of improving contrast, preventing color mixture of color materials, and the like.

A second light-shielding film 11a is provided between the TFT array substrate 10 and each pixel switching TFT 30 at a position facing each pixel switching TFT 30. The second light-shielding film 11a is shown in FIGS.
As shown in (1), the first light-shielding film 53 that defines the frame area on the TFT array substrate 10 may be formed of the same film.
As a result, the steps can be shared, and the manufacturing cost can be reduced. Since the second light-shielding film 11a is formed, light returning from the side of the TFT array substrate 10 and the like may be incident on the channel region 1a ', the low-concentration source region 1b, and the low-concentration drain region 1c of the pixel switching TFT 30. This can be prevented beforehand, and the characteristics of the pixel switching TFT 30 do not change due to generation of current due to light.

Further, a first interlayer insulating film 12 is provided between the second light-shielding film 11a and the plurality of pixel switching TFTs 30.
Is provided. The first interlayer insulating film 12 is provided for electrically insulating the semiconductor layer 1a constituting the pixel switching TFT 30 from the second light-shielding film 11a. Further, the first interlayer insulating film 12 is formed on the TFT array substrate 1.
By being formed on the entire surface of 0, it also has a function as a base film for the pixel switching TFT 30. That is, the pixel switching TFT 3 may be roughened during polishing of the surface of the TFT array substrate 10 or stains remaining after cleaning.
0 has the function of preventing the deterioration of the characteristic. The first interlayer insulating film 12 is made of, for example, a highly insulating glass such as NSG (non-doped silicate glass), PSG (phosphosilicate glass), BSG (boron silicate glass), BPSG (boron phosphorus silicate glass), or a silicon oxide film. , A silicon nitride film or the like. Due to the first interlayer insulating film 12, the second light-shielding film 11a is
It is also possible to prevent a situation where 0 or the like is contaminated.

In the present embodiment, the gate insulating film 2 provided between the gate electrode, which is a part of the scanning line 3a, and the semiconductor layer 1a is used as a dielectric film extending from a position facing the scanning line 3a. The storage capacitor 70 is formed by extending the semiconductor layer 1a to form a first storage capacitor electrode 1f, and further forming a part of the capacitor line 3b opposed thereto as a second storage capacitor electrode.

The pixel switching TFT 30 is an LDD
A scanning line 3a, a channel region 1a 'of the semiconductor layer 1a in which a channel is formed by an electric field from the scanning line 3a, a gate insulating film 2 for insulating the scanning line 3a from the semiconductor layer 1a, The semiconductor device includes a line 6a, a low-concentration source region 1b and a low-concentration drain region 1c of the semiconductor layer 1a, and a high-concentration source region 1d and a high-concentration drain region 1e of the semiconductor layer 1a. A corresponding one of the plurality of pixel electrodes 9a is connected to the high-concentration drain region 1e. On the scanning line 3a, the gate insulating film 2, and the first interlayer insulating film 12, a contact hole 5 leading to the high-concentration source region 1d and a contact hole 8 leading to the high-concentration drain region 1e are respectively formed. An interlayer insulating film 4 is formed. Further, a third interlayer insulating film 7 having a contact hole 8 to the high-concentration drain region 1e is formed on the data line 6a and the second interlayer insulating film 4. The above-described pixel electrode 9a is provided in the third
It is provided on the upper surface of the interlayer insulating film 7.

The pixel switching TFT 30 preferably has the LDD structure as described above, but may have an offset structure in which impurity ions are not implanted into the low-concentration source region 1b and the low-concentration drain region 1c. A self-aligned TFT in which impurity ions are implanted at a high concentration using 3a as a mask to form high-concentration source and drain regions in a self-aligned manner may be used. In the present embodiment, the pixel switching TFT 30 has a single gate structure in which only one gate electrode formed of a part of the scanning line 3a is arranged between the source and drain regions.
Two or more gate electrodes may be arranged between them.
At this time, the same signal is applied to each gate electrode.

Here, in general, the polysilicon layers such as the channel region 1a 'of the semiconductor layer 1a, the low-concentration source region 1b, and the low-concentration drain region 1c generate a photocurrent by exciting electrons when light enters. Although this occurs, the transistor characteristics of the pixel switching TFT 30 change. In the present embodiment, the data line 6a is formed of a light-shielding metal thin film such as Al so that the scanning line 3a overlaps from the upper side. Irradiation of incident light to at least the channel region 1a ', the low-concentration source region 1b, and the low-concentration drain region 1c of the semiconductor layer 1a can be effectively prevented.
Further, as described above, since the second light-shielding film 11a is provided below the pixel switching TFT 30, at least the channel region 1a ', the low-concentration source region 1b, and the low-concentration drain region 1c of the semiconductor layer 1a are provided. Return light can be effectively prevented from entering.

In this embodiment, in particular, the second light-shielding film 1
1a is electrically connected to a constant potential source,
a is a constant potential. By setting the second light-shielding film 11a at a constant potential in this way, the potential fluctuation of the second light-shielding film 11a does not adversely affect the pixel switching TFT 30 in practice. In this case, as the constant potential source, a constant potential source such as a negative power supply or a positive power supply supplied to a peripheral circuit (for example, a scanning line driving circuit, a data line driving circuit, or the like) for driving the liquid crystal device, a ground power supply In this embodiment, the second light-shielding film 11a is connected to a negative power supply of the scanning drive circuit. By using a power supply such as a peripheral circuit in this way, the second light-shielding film 11a can be set at a constant potential without providing a dedicated potential wiring or an external circuit connection terminal. When the first interlayer insulating film 12 is sufficiently thick, the second light-shielding film 11a may be formed in an island shape for each pixel unit so as to be electrically floating. In addition, the first light-shielding film 53 that defines a frame area
And the second light shielding film 11a may be electrically connected. Accordingly, the first light-shielding film 53 that defines the frame region is fixed at a constant potential, so that it is possible to prevent noise from jumping into the data lines 6a and the scanning lines 3a.

As shown in FIG. 7, in this embodiment,
The first light-shielding film 53 and the second light-shielding film 11a have conductivity, and wiring for lowering the second light-shielding film 11a to a constant potential is also formed of the same film as these. In addition, redundant wiring such as the data line 6a, the scanning line 3a, and the capacitance line 3b may be formed using the second light-shielding film 11a. With this configuration, the light-shielding film defining the frame region and the wiring can be manufactured from the same film in the same process, which is advantageous in the manufacturing process. Similarly, when the first light-shielding film 53 shown in other embodiments described below is formed of a conductive material, various wirings may be formed from the same film as the first light-shielding film 53. However, the first light shielding film 5
3 may be formed of an insulating material such as an organic film if it is not used as such a wiring or a relay conductive layer.

(Second Embodiment) Next, a second embodiment of the present invention will be described with reference to FIGS. Here, FIG. 9 is a plan view of the sampling switch 103a (see FIG. 3) in the second embodiment, and FIG. 10 is a sectional view taken along the line BB 'of FIG. 9 and 10, the same components as those in the first embodiment shown in FIGS. 1 to 8 are denoted by the same reference numerals, and the description thereof will be omitted.

As shown in FIGS. 9 and 10, in the second embodiment, the sampling circuit 103 shown in FIG. 3 is arranged in a frame area defined by the first light shielding film 53.
Further, unlike the first embodiment, an opening 53a is provided in the first light shielding film 53 so as to face each sampling switch 103a made of a TFT.
The point that the image signal line 115 and the data line 6a made of an Al film or the like are locally widened in this portion so as to cover a from the counter substrate 20 side is different from the case of the first embodiment. Is the same as in the first embodiment.

According to the second embodiment, by arranging the sampling circuit 103 in the frame area as described above, it is possible to effectively use a limited area on the substrate, and to display an image on a substrate having the same area. It is also possible to increase the area. Further, similarly to the case where the light / dark pattern corresponding to the data line 6a shown in FIGS. 4 to 6 is not displayed, also in the present embodiment, the first light shielding film 53 is connected to the sampling switch 1.
Since it is provided on the TFT array substrate 03a of 03a, a light and dark pattern corresponding to such a planar layout of the sampling switch 103a is not projected. Therefore, the sampling switch 103a can be arranged in a desired plane layout in the frame area,
This is very advantageous in terms of device design. The sampling circuit 1
Peripheral circuits other than 03 (for example, a precharge circuit, a scanning line driving circuit, a data line driving circuit, etc.) may be arranged in the frame region. As in the case of the TFT shown in FIGS. 9 and 10, an opening may be provided so as to be covered with a wiring or the like made of a light-shielding material.

In the second embodiment, in particular, the first light-shielding film 53 is provided with an opening 53a in a region facing the sampling switch 103a composed of a TFT, so that the first light-shielding film 53 is formed in the semiconductor layer 1a ''. Not facing (Fig. 10
Reference), it is possible to prevent the transistor characteristics of the TFT from changing due to the potential of the first light shielding film 53 beforehand. Since the opening 53a is covered with the wide portion of the image signal line 115 made of an Al film or the like when viewed from the opposite substrate 20 side in a plan view, the decrease in the light shielding performance due to the provision of the opening 53a is prevented. Little or no occurrence. In particular,
Since an additional process is not required to form the image signal line 115 wide, there is little disadvantage in a manufacturing process.

Instead of widening the image signal line 115 and covering the opening 53a, the opening 53a may be covered with another light-shielding film. For example, the opening 5
Another light-shielding film may be formed in an island shape at a location facing 3a. As such another light-shielding film, a dedicated light-shielding film may be additionally formed in the laminated structure on the TFT array substrate 10, or another wiring or element in the laminated structure on the TFT array substrate 10 may be used. May be used, or a light-shielding film may be separately formed on the opposing substrate 20, or may be the same as the third light-shielding film 23 on the opposing substrate 20. It may be formed from a film.

(Third Embodiment) Next, a third embodiment of the present invention will be described with reference to FIGS. Here, FIG. 11 is a sectional view taken along line AA ′ of FIG. 7 in the third embodiment.
FIG. 12 is a cross-sectional view at a location corresponding to the cross-section.
FIG. 2 is a schematic cross-sectional view showing, on an enlarged scale, a laminated structure on a TFT array substrate 10 side at a position corresponding to a cross section taken along line CC ′ of FIG. 1 in the embodiment. In FIGS. 11 and 12, the same components as those in the first embodiment shown in FIGS. 1 to 8 are denoted by the same reference numerals, and description thereof will be omitted.

As shown in FIG. 11, in the third embodiment, the barrier layer 80, which is an example of a relay conductive layer that relays the pixel switching TFT 30 and the pixel electrode 9a via a contact hole in each pixel, is formed by two minutes. The second embodiment is different from the first embodiment in that the first light-shielding film 153 for defining a frame region is different from the first embodiment in that the first light-shielding film 153 defining the frame region is provided between the pixel switching TFT 30 and the second interlayer insulating film 4a.
The second embodiment differs from the first embodiment in that the second light-shielding film 11a is not formed of the same film as the second light-shielding film 11a but is formed of the same conductive film as the barrier layer 80. Same as the form.

According to the third embodiment, in FIG. 11, even when the interlayer distance between the pixel electrode 9a and the pixel switching TFT 30 is large, the reliability can be relatively easily increased by using the barrier layer 80 as described above. Both can be electrically connected using a contact hole having a very small diameter. In particular, the first light-shielding film 1 that defines such a barrier layer 80 and a frame region is provided.
53 is made of the same film such as a high melting point metal film, so that both can be manufactured in the same process. However, without providing the barrier layer 80 for each pixel, as shown in FIG.
The light shielding film 153 may be formed.

Then, as shown in FIG. 12, the data line 6a
Even if part of the incident light Lin incident from the counter substrate 20 side is internally reflected by the conductive film such as Al forming
As in the case of the embodiment, based on the basic principle described with reference to FIG. 6A, the reflected light is internally reflected again by the first light-shielding film 153 that defines the frame region, and the TFT array substrate 10
Does not mix with the emitted light Lout from the side and emit it.
Eventually, it is possible to prevent a situation in which the light and dark pattern image is projected near the edge of the display image.

(Fourth Embodiment) Next, a fourth embodiment of the present invention will be described with reference to FIG. Here, FIG.
FIG. 3 is a schematic cross-sectional view showing, on an enlarged scale, a laminated structure on the TFT array substrate 10 side at a location corresponding to the CC ′ cross-section in FIG. 1 in the fourth embodiment. In FIG. 13, the same components as those in the first embodiment shown in FIGS. 1 to 8 are denoted by the same reference numerals, and the description thereof will be omitted.

As shown in FIG. 13, in the fourth embodiment, the first light-shielding film 253 for defining the frame region is formed of the same film as the second light-shielding film 11a disposed below the pixel switching TFT 30. However, unlike the first embodiment, the second embodiment is different from the first embodiment in that
Other configurations are the same as in the first embodiment.

According to the fourth embodiment, the first light shielding film 253
Can be formed by using a thin film forming technique or a printing technique, and the first light shielding film 2 can be formed after the electro-optical device is almost completed.
Since the first light-shielding film 253 can be formed, the first light-shielding film 253 can be prevented from being placed in a high-temperature environment when the TFT 30 is formed. Therefore, the first light-shielding film 253 can be conveniently formed from various materials that are not restricted by temperature or the like by various methods.

The incident light Li incident from the counter substrate 20 side is formed by the conductive film of Al or the like forming the data line 6a.
Even if a part of n is internally reflected, the reflected light is again internally reflected by the first light-shielding film 253 that defines the frame area, and T
The light emitted from the FT array substrate 10 is not mixed with the emitted light Lout to be emitted, so that it is possible to prevent a situation in which this bright and dark pattern image is finally displayed near the edge of the display image.

In each of the above-described embodiments, for example, the first light-shielding film 53 shown in FIG. 4 and the like and the first light-shielding film 153 made of the same film as the barrier layer 80 shown in FIG.
2, two or more light-shielding films, such as a first light-shielding film 253 provided on the back side of the TFT array substrate 10 and a light-shielding film formed of the same film as the third light-shielding film 23 provided on the counter substrate 20 side. It may be used to at least partially define the frame area redundantly. Alternatively, the frame area
These may be defined by combining two or more light-shielding films (for example, one side of the frame region is defined by the first light-shielding film 53 and the other side is defined by the first light-shielding film 153). May be configured).

On the other hand, the second light shielding film 11a, the data line 6a,
If the whole or a part of the opening area of each pixel is defined by using another light-shielding film such as the barrier layer 80, the opening area of each pixel shown in FIGS. The prescribed third light-shielding film 23 can be partially or entirely omitted. Alternatively, the third light-shielding film 23 may be configured so as to redundantly define the opening area of each pixel, or the third light-shielding film 23 may be configured as a film for heat insulation mainly due to incident light.

Further, even if the present invention is applied to a transmissive liquid crystal device of any system other than the TFT active matrix driving system, such as a TFD active matrix driving system and a passive matrix driving system, data lines, scanning lines, etc. The basic principle of the present embodiment in which the light-dark pattern due to the internal reflection is not projected near the end of the display image is maintained (see FIG. 6), and the same effect as in the present embodiment can be expected. Furthermore, even if the present invention is applied not only to a liquid crystal device with a built-in drive circuit (see FIGS. 1 and 2), but also to a liquid crystal device with an external drive circuit, the same effects as those of the present embodiment are exhibited. Is done.

In the liquid crystal device according to each of the embodiments described above, for example, a TN (Twisted Nematic) mode, a VA (Vertically Aligned) mode, and a PDLC (Polym) are provided on the outer surface of the counter substrate 20 and the outer surface of the TFT array substrate 10, respectively.
A polarizing film, a retardation film, a polarizing plate, and the like are arranged in a predetermined direction according to an operation mode such as an (er Dispersed Liquid Crystal) mode or a normally white mode / normally black mode.

(Structure of Electronic Apparatus) An electronic apparatus using the liquid crystal device of the above embodiment includes a display information output source 1000, a display information processing circuit 1002, a display drive circuit 1004, a liquid crystal device and the like shown in FIG. Electro-optical device 100,
It includes a clock generation circuit 1008 and a power supply circuit 1010. The display information output source 1000 is a ROM, R
A clock generation circuit 1008 including a memory such as an AM, a tuning circuit for tuning and outputting a television signal, and the like.
And outputs display information such as a video signal based on the clock from the CPU. The display information processing circuit 1002 processes and outputs display information based on the clock from the clock generation circuit 1008. The display information processing circuit 1002 can include, for example, an amplification / polarity inversion circuit, a phase expansion circuit, a rotation circuit, a gamma correction circuit, a clamp circuit, and the like. The display driving circuit 1004 is configured to include a scanning side driving circuit and a data side driving circuit.
006 is driven for display. The power supply circuit 1010 supplies power to each of the above circuits.

As an electronic device having such a configuration, FIG.
And the like.

FIG. 15 is a schematic configuration diagram showing a main part of the projection display device. In the figure, 1102 is a light source, 1108 is a dichroic mirror, 1106 is a reflection mirror, 1122
Is an entrance lens, 1123 is a relay lens, 1124 is an exit lens, 100R, 100G, 10 and B are liquid crystal light modulators, 1112 is a cross dichroic prism, 11
Reference numeral 14 denotes a projection lens. The light source 1102 includes a lamp such as a metal halide and a reflector that reflects light from the lamp. Dichroic mirror 11 that reflects blue light and green light
Reference numeral 08 transmits red light of the light beam from the light source 1102 and reflects blue light and green light. The transmitted red light is reflected by the reflection mirror 1106 and is incident on the liquid crystal light modulator for red light 100R. On the other hand, the green light among the color lights reflected by the dichroic mirror 1108 is reflected by the green light reflecting dichroic mirror 1108 and is incident on the liquid crystal light modulator for green light 100G. On the other hand, the blue light is transmitted to the second dichroic mirror 110.
8 is also transmitted. For blue light, an incident lens 1122 and a relay lens 11 are used to prevent light loss due to a long optical path.
23, a light guiding means 1121 comprising a relay lens system including an emission lens 1124 is provided, through which blue light is incident on the liquid crystal light modulation device 100B for blue light. The three color lights modulated by the respective light modulators enter the cross dichroic prism 1112. This prism is formed by bonding four right-angle prisms, and a dielectric multilayer film that reflects red light and a dielectric multilayer film that reflects blue light are formed in a cross shape on the inner surface. The three color lights are combined by these dielectric multilayer films to form light representing a color image. The combined light is transmitted through a projection lens 1 as a projection optical system.
The image is projected on a screen 1120 by 114, and the image is enlarged and displayed.

The present invention is not limited to the above-described embodiments, but can be appropriately modified without departing from the gist or idea of the invention which can be read from the claims and the entire specification. Such a liquid crystal device is also included in the technical scope of the present invention.

[Brief description of the drawings]

FIG. 1 is a plan view illustrating an overall configuration of an electro-optical device according to an embodiment of the present invention.

FIG. 2 is a sectional view taken along line H-H 'of FIG.

FIG. 3 is a block diagram illustrating a circuit configuration of the electro-optical device of FIG.

FIG. 4 is an enlarged schematic cross-sectional view showing a laminated structure on the TFT array substrate side in a cross section taken along line CC ′ of FIG. 1 of the first embodiment of the present invention.

FIG. 5 is a schematic cross-sectional view showing, on an enlarged scale, a laminated structure of a comparative example at a location corresponding to a cross section taken along line CC ′ of FIG. 1;

FIG. 6 is a schematic conceptual diagram (FIG. 6 (a)) showing how the incident light and the return light in the embodiment shown in FIG. 5 are blocked, and the incident light and the return light in the comparative example shown in FIG. 5 are blocked. FIG. 6 (b) is a schematic conceptual diagram showing the situation.

FIG. 7 is a plan view of a plurality of pixel groups adjacent to each other on a TFT array substrate on which data lines, scanning lines, pixel electrodes, a second light-shielding film, and the like are formed.

8 is a sectional view taken along line A-A 'of FIG.

FIG. 9 is a plan view of a sampling switch according to a second embodiment of the present invention.

FIG. 10 is a sectional view taken along line B-B 'of FIG.

FIG. 11 is a sectional view taken along line A- in FIG. 7 according to a third embodiment of the present invention;
It is sectional drawing in the location corresponding to A 'cross section.

FIG. 12 is a schematic cross-sectional view showing, on an enlarged scale, a laminated structure on a TFT array substrate side at a location corresponding to a cross section taken along line CC ′ of FIG. 1 in a third embodiment.

FIG. 13 is a sectional view taken along line C- in FIG. 1 according to a fourth embodiment of the present invention;
FIG. 4 is a schematic cross-sectional view showing, on an enlarged scale, a laminated structure on a TFT array substrate side at a location corresponding to a C ′ cross-section.

FIG. 14 is an example of an electronic device.

FIG. 15 is an embodiment of a projection display device as an application example using the present embodiment.

[Explanation of symbols]

 1a: semiconductor layer 1f: first storage capacitor electrode 2: gate insulating film 3a: scanning line 3b: capacitor line 4: second interlayer insulating film 5: contact hole 6a: data line 7: third interlayer insulating film 8: contact hole 9a: Pixel electrode 10: TFT array substrate 10a: Image display area 11a: Second light-shielding film 12: First interlayer insulating film 20: Counter substrate 21: Counter electrode 23: Third light-shielding film 30: TFT 50: Liquid crystal layer 52 ... Sealing materials 53, 153, 253 First light-shielding film 53a Opening 70 Storage capacitance 80 Barrier layer 101 Data line driving circuit 103 Sampling circuit 103a Sampling switch 104 Scanning line driving circuit 114 Sampling circuit driving signal Line 115: Image signal line

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 2H091 FA34Y FB08 FC02 FC10 FC26 FD04 FD12 GA13 LA03 MA07 2H092 JA25 JA29 JA38 JA42 JA44 JB13 JB23 JB32 JB33 JB38 JB51 JB58 JB63 JB69 KA04 KA07 MA05 MA18 MA18 MA19 MA28 MA35 MA37 NA07 NA25 PA09 RA05 5C094 AA14 BA03 BA43 CA19 DA09 DA13 EA03 EA04 EA07 ED15

Claims (16)

[Claims] An electro-optical material is sandwiched between a pair of a transparent first substrate and a transparent second substrate, and is disposed in an image display area on the first substrate on a side facing the second substrate. A plurality of pixel electrodes, a plurality of wirings respectively connected to the plurality of pixel electrodes, and a first layer stacked between the first substrate and the wiring and defining a frame area of the image display area. An electro-optical device comprising a light-shielding film. 2. An electro-optical material sandwiched between a pair of a transparent first substrate and a transparent second substrate, and disposed in an image display area on the first substrate on a side facing the second substrate. A plurality of pixel electrodes, and a plurality of wirings respectively connected to the plurality of pixel electrodes, and defines a frame of the image display area on the first substrate on a side opposite to the second substrate. An electro-optical device comprising a first light-shielding film. 3. The electro-optical device according to claim 1, wherein the first light shielding film contains a high melting point metal. 4. The electro-optical device according to claim 1, wherein the wiring is arranged so as to cross the frame region. 5. The semiconductor device further comprises a peripheral circuit disposed on the first substrate on a side facing the second substrate, the peripheral circuit being arranged in the frame region and driving the pixel electrode. 5. The electro-optical device according to claim 1, further comprising a plurality of thin film transistors for peripheral circuits. 6. The electro-optical device according to claim 5, wherein the peripheral circuit is a sampling circuit, and the peripheral circuit thin film transistor is a sampling switch that samples an image signal and supplies the image signal to the wiring. apparatus. 7. The first light-shielding film has an opening in at least a region facing the channel region of the thin film transistor for the peripheral circuit, and the opening is viewed from above the second substrate in a plan view. The electro-optical device according to claim 5, wherein the electro-optical device is covered by a part of the wiring. 8. The first light-shielding film has an opening in at least a region facing a gate of the thin film transistor for a peripheral circuit, and is planarly viewed from the first substrate or the second substrate. The electro-optical device according to claim 5, further comprising another light shielding film that covers the opening. 9. The data line, comprising: a plurality of scanning lines intersecting the data lines on the first substrate on a side facing the second substrate;
9. The transmissive electro-optical device according to claim 1, further comprising a pixel switching thin film transistor connected to the scanning line and the pixel electrode. 10. The semiconductor device according to claim 1, further comprising a second light-shielding film formed of the same film as the first light-shielding film and formed at a position covering at least a channel region of the pixel switching thin film transistor when viewed from the first substrate side. Claim 9
An electro-optical device according to claim 1. 11. The first light-shielding film is formed of a conductive material, is formed of the same film as the first light-shielding film, and relays the pixel switching thin film transistor and the pixel electrode via a contact hole. The electro-optical device according to claim 9, further comprising a conductive layer for use. 12. The device according to claim 1, wherein the first light-shielding film is formed of a conductive material, and the first light-shielding film is fixed at a constant potential. An electro-optical device according to claim 1. 13. The electro-optical device according to claim 12, further comprising: a power supply terminal for supplying the constant potential; and a peripheral circuit to which a power supply voltage is supplied via the power supply terminal. 14. The electro-optical device according to claim 10, wherein the first light shielding film and the second light shielding film are electrically connected. 15. The device according to claim 1, wherein the first light-shielding film is formed of a conductive material, and further includes another wiring made of the same film as the first light-shielding film. An electro-optical device according to claim 1. 16. The electric device according to claim 1, further comprising another light-shielding film that overlaps at least a part of the first light-shielding film and that defines the frame region. Optical device.